CN114597758A - Active Q-adjusting internal cavity type Nd-YAG ceramic/BaWO4Dual-wavelength Raman laser - Google Patents

Active Q-adjusting internal cavity type Nd-YAG ceramic/BaWO4Dual-wavelength Raman laser Download PDF

Info

Publication number
CN114597758A
CN114597758A CN202210010224.5A CN202210010224A CN114597758A CN 114597758 A CN114597758 A CN 114597758A CN 202210010224 A CN202210010224 A CN 202210010224A CN 114597758 A CN114597758 A CN 114597758A
Authority
CN
China
Prior art keywords
bawo
light
yag
mirror
ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN202210010224.5A
Other languages
Chinese (zh)
Inventor
尚新新
张华年
孙硕
程帅
郭林广
杨富豪
隋志琦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shandong Sengmde Laser Technology Co ltd
Original Assignee
Shandong Sengmde Laser Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shandong Sengmde Laser Technology Co ltd filed Critical Shandong Sengmde Laser Technology Co ltd
Priority to CN202210010224.5A priority Critical patent/CN114597758A/en
Publication of CN114597758A publication Critical patent/CN114597758A/en
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/1086Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering using scattering effects, e.g. Raman or Brillouin effect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09Processes or apparatus for excitation, e.g. pumping
    • H01S3/091Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1123Q-switching
    • H01S3/117Q-switching using intracavity acousto-optic devices

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Lasers (AREA)

Abstract

The invention discloses active Q-switched internal cavity Nd-YAG ceramic/BaWO4A dual-wavelength Raman laser comprises a pump light source, an optical coupling system, a resonant cavity, Nd, YAG transparent ceramic, an acousto-optic modulator, and BaWO4The resonator comprises an input mirror M1 and an output mirror M2; an optical coupling system, an input mirror M1, Nd: YAG transparent ceramic, an acousto-optic modulator, and BaWO are sequentially arranged along the output direction of the pump light4The crystal, the output mirror M2 and the filter plate; the input mirror M1, Nd-YAG transparent ceramic, acousto-optic modulator, BaWO4The crystal and the light-passing surface of the output mirror M2 are arranged in parallel and are vertical to the propagation direction of the pump light; based on different Raman shifts, the invention realizes effective dual-wavelength operation. At a pumping power of 22.3W and a pulse weightIn the case of a complex frequency of 10kHz, the maximum output power of the first-order Stokes light at 1240nm and the second-order Stokes light at 1376nm were 869mW and 512mW, respectively. The pulse widths of the first-order stokes light and the second-order stokes light are 16ns and 2.6ns, respectively.

Description

Active Q-adjusting internal cavity type Nd-YAG ceramic/BaWO4Dual-wavelength Raman laser
Technical Field
The invention belongs to the technical field of solid lasers, and particularly relates to active Q-switched internal cavity type Nd-YAG ceramic/BaWO4A dual wavelength raman laser.
Background
Solid-state raman lasers have received much attention due to their high conversion efficiency, compact size, and good mechanical and thermal properties. To date, Raman-active media include YVO4、SrWO4、KGd(WO4)2、BaWO4、PbWO4Etc. have been used for raman generation. Among the well-known Raman active media, BaWO4The crystal is considered to be a promising raman crystal material due to its higher raman gain efficiency and excellent thermodynamic properties. It is applicable to a wide range of pump pulse durations, from picoseconds to nanoseconds. BaWO4The most intense Raman peak in the crystal is located at 925cm-1And 332cm-1To (3).
In the past, based on 332cm-1And 925cm-1Has been reported about BaWO4Raman studies of crystal applications. Except for 332cm which is widely used-1And 925cm-1Outside the Raman shift, BaWO4The crystal has other important Raman shifts, but BaWO based on other Raman shifts is provided at present4Few research reports related to raman lasers are available.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides active Q-regulating internal cavity type Nd: YAG ceramic/BaWO4A dual wavelength Raman laser solves the problems mentioned in the background art.
The invention provides active Q-switched internal cavity Nd-YAG ceramic/BaWO4A dual-wavelength Raman laser comprises a pump light source, an optical coupling system, a resonant cavity, and a Nd-YAG transparent laserCeramic, acousto-optic modulator, BaWO4The resonator comprises an input mirror M1 and an output mirror M2; along the propagation direction of the pump light, an optical coupling system, an input mirror M1, Nd: YAG transparent ceramic, an acousto-optic modulator, and BaWO are sequentially arranged4The crystal, the output mirror M2 and the filter plate; the input mirror M1, Nd-YAG transparent ceramic, acousto-optic modulator, BaWO4The crystal and the light-passing surface of the output mirror M2 are arranged in parallel and are vertical to the propagation direction of the pump light; the pump light emitted by the pump light source enters an input mirror M1 of the resonant cavity after passing through the optical coupling system, then enters Nd-YAG transparent ceramic to complete the gain process of the laser, and then passes through an acousto-optic modulator and BaWO4The generated parametric light oscillates in the resonant cavity to amplify energy, the laser is output from the output mirror M2, and the residual pump light and the unnecessary wavelength are filtered by the filter plate to retain the required laser wavelength.
Under the conditions that the pumping power of the Raman laser is 22.3W and the pulse repetition frequency is 10kHz, the maximum output power of a first-order Stokes light at 1240nm and the maximum output power of a second-order Stokes light at 1376nm of the Raman laser are 869mW and 512mW respectively; the pulse widths of the first-order stokes light and the second-order stokes light are 16ns and 2.6ns, respectively.
The pumping light source adopts a diode pumping laser with 808nm optical fiber coupling continuous light output.
The optical coupling system is composed of two convex lenses.
The input mirror M1 is a concave mirror with a curvature radius of 1000mm, the light incident surface of the input mirror M1 is coated with an antireflection film with a wavelength of 808nm (R < 0.2%), and the light emergent surface is coated with high-reflection coatings with a wavelength of 1112nm (R > 99.9%), 1240nm (R > 99.8%) and 1376nm (R > 99.8%).
The doping concentration of the Nd: YAG transparent ceramic is 1.0 at.%, and the size is phi 4 multiplied by 5mm3At both end faces, 1112nm, 1240nm and 1376nm (R) were plated<0.2%) anti-reflective coating.
The acousto-optic modulator is 38mm long, is driven at the center frequency of 41MHz, and has the radio frequency power of 15W.
The BaWO4CrystalCutting BaWO for a4Crystals of 5X 46.6mm in size3On both end faces, 1112nm, 1240nm and 1376nm (R) were plated<0.2%) anti-reflective coating.
The output mirror M2 is a flat mirror coated with a 1240nm partially reflective (R94%), 1376nm partially reflective (R82%), and 1112nm highly reflective (R99.8%).
And the Nd: YAG transparent ceramic and BaWO4It is wrapped by indium foil, installed in water-cooled copper block, and cooled in circulating water at 18 deg.C together with acousto-optic modulator.
Compared with the prior art, the invention has the following beneficial effects:
the invention adopts 808nm diode laser as pumping source which is 1240nm (based on 928 cm)-lRaman shift of) and 1376nm (based on 797 cm)-lRaman shift) achieves efficient first-order stokes light and second-order stokes light.
When the pumping power is 22.3W, the average output power is 869mW, the wavelength is 1240nm, and the output power is 512 mW; the wavelength was 1376nm, the pulse repetition rate was 10kHz, and the corresponding light conversion efficiencies were 3.9% and 2.3%, respectively. The phenomenon of variation of raman shift is observed, which is advantageous for scientific research of raman spectroscopy physics.
Drawings
Fig. 1 is a diagram of a raman laser according to the present invention.
Fig. 2 is an output spectrum of the raman laser according to the present invention.
Fig. 3 is a graph showing the dependence of the output power of the raman laser according to the present invention on the pump power.
Fig. 4 is a fundamental and single pulse diagram of a raman laser according to the present invention.
In the figure: 1. a pump light source; 2. an optical coupling system; 3. an input mirror M1; 4. nd is YAG transparent ceramic; 5. an acousto-optic modulator; 6. BaWO4A crystal; 7. an output mirror M2; 8. a filter.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention.
Referring to fig. 1, the present invention provides a technical solution: active Q-adjusting internal cavity type Nd-YAG ceramic/BaWO4A dual-wavelength Raman laser comprises a pumping light source (1), an optical coupling system (2), an input mirror M1(3), Nd, YAG transparent ceramics (4), an acousto-optic modulator (5) and BaWO4The resonant cavity consists of an input mirror M1(3) and an output mirror M2 (7); an optical coupling system (2), an input mirror M1(3), Nd, YAG transparent ceramic (4), an acousto-optic modulator (5), a BaWO4 crystal (6), an output mirror M2(7) and a filter (8) are sequentially arranged along the propagation direction of pump light. The input mirror M1(3), Nd: YAG transparent ceramic (4), acousto-optic modulator (5) and BaWO4The light-passing surfaces of the crystal (6) and the output mirror M2(7) are both arranged in parallel and are perpendicular to the output light beam of the pumping light source (1).
Pump light emitted by a pump light source (1) enters an input mirror M1(3) of a resonant cavity after passing through an optical coupling system (2), then enters an Nd: YAG transparent ceramic (4) to finish the gain process of laser, and then passes through an acousto-optic modulator (5) and BaWO4The crystal (6) generates parametric light with two wavelengths, the generated parametric light oscillates in the resonant cavity so as to amplify energy, laser is output from the output mirror M2(7), and then the filter wave plate (8) filters residual pump light and unwanted wavelengths to retain the needed laser wavelength.
The relevant tests of the output laser were as follows:
when the output mirror M2 is used, dual wavelength raman laser operation at 1240 and 1376nm results. When the pumping power is 22.3W and the pulse repetition frequency is 10kHz, the spectral information output by the stimulated Raman scattering in the cavity is monitored. The obtained spectrum comprises a fundamental wavelength of 1112nm and raman wavelengths of 1240nm and 1376nm, and a spectrum diagram is depicted in fig. 2. The center wavelengths of the fundamental wavelength, the first-order Stokes light and the second-order Stokes light are 1112nm, 1240nm and 1376nm, respectively, corresponding to 928cm-1And 797cm-1Raman shift of (1).
Fig. 3 shows the dependence of the output power of the first-order stokes light and the second-order stokes light on the pump power at 5kHz, 10kHz and 15 kHz. It can be seen that the maximum output power of the first-order stokes light and the second-order stokes light wave reaches 869mW and 512mW respectively when the pulse repetition frequency is 10 kHz. It is clear that the output power strongly depends on the pulse repetition frequency. At low pump powers, the dielectric thermal effect is insignificant at low or high pulse repetition rates, but the single pulse energy at low pulse repetition rates (5kHz) is higher than at high pulse repetition rates (10kHz and 15kHz), while higher pulse energies generally result in higher conversion efficiencies from the fundamental laser to the stokes laser. Thus, at low incident pump power, the average output power of the stokes light at a 5kHz pulse repetition frequency is higher than the power at 10kHz and 15kHz pulse repetition frequencies, respectively.
Typical single pulse shapes of the fundamental and raman pulses are shown in fig. 4 at a pump power of 22.3W, pulse repetition frequency of 10 kHz. Pulse widths of the fundamental wave, first-order stokes light and second-order stokes light were measured as 76ns, 16ns and 2.6ns, respectively. It can be seen that the frequency conversion of the raman scattering leads to a shortening of the pulse of the stokes light component.
The above examples are provided only for the purpose of describing the present invention, and are not intended to limit the scope of the present invention. The scope of the invention is defined by the appended claims. Various equivalent substitutions and modifications can be made without departing from the spirit and principles of the invention, and are intended to be within the scope of the invention.

Claims (9)

1. Active Q-adjusting internal cavity type Nd-YAG ceramic/BaWO4Dual wavelength Raman laser, its characterized in that: comprises a pump light source, an optical coupling system, a resonant cavity, Nd, YAG transparent ceramics, an acousto-optic modulator, and BaWO4The resonant cavity consists of an input mirror M1 and an output mirror M2; along the propagation direction of the pump light, an optical coupling system, an input mirror M1, Nd: YAG transparent ceramic, an acousto-optic modulator, and BaWO are sequentially arranged4The crystal, the output mirror M2 and the filter plate; the input mirror M1, Nd-YAG transparent ceramic, acousto-optic modulator, BaWO4The crystal and the light-passing surface of the output mirror M2 are arranged in parallel and are vertical to the propagation direction of the pump light; pump light flux emitted by pump light sourceAfter passing through the optical coupling system, enters an input mirror M1 of the resonant cavity, then enters Nd-YAG transparent ceramic to complete the gain process of laser, and then passes through an acousto-optic modulator and BaWO4Generating parametric light with two wavelengths after the crystal, oscillating the generated parametric light in the resonant cavity so as to amplify energy, outputting laser from the output mirror, filtering out residual pump light and unnecessary wavelengths by the filter plate, and reserving required laser wavelength;
under the conditions that the pumping power of the Raman laser is 22.3W and the pulse repetition frequency is 10kHz, the maximum output power of a first-order Stokes light at 1240nm and the maximum output power of a second-order Stokes light at 1376nm of the Raman laser are 869mW and 512mW respectively; the pulse widths of the first-order stokes light and the second-order stokes light are 16ns and 2.6ns, respectively.
2. YAG ceramic/BaWO in active Q-switched internal cavity type Nd according to claim 14Dual wavelength Raman laser, its characterized in that: the pumping light source adopts a diode laser with 808nm optical fiber coupling continuous light output.
3. YAG ceramic/BaWO in active Q-switched internal cavity type Nd according to claim 14Dual wavelength Raman laser, its characterized in that: the optical coupling system is composed of two convex lenses.
4. YAG ceramic/BaWO in active Q-switched internal cavity type Nd according to claim 14Dual wavelength Raman laser, its characterized in that: the input mirror M1 is a concave mirror with a curvature radius of 1000mm, and the light incident surface of the input mirror M1 is coated with an antireflection film (R) of 808nm<0.2%), and the light-emitting surface is plated with 1112nm (R)>99.9%)、1240nm(R>99.8%) and 1376nm (R)>99.8%) of a highly reflective coating.
5. YAG ceramic/BaWO in active Q-switched internal cavity type Nd according to claim 14Dual wavelength Raman laser, its characterized in that: the doping concentration of the Nd: YAG transparent ceramic is 1.0 at.%, and the size is phi 4 multiplied by 5mm3On both end faces thereof, 1112nm, 1240nm and 1376 are platednm(R<0.2%) anti-reflective coating.
6. YAG ceramic/BaWO in active Q-switched internal cavity type Nd according to claim 14Dual wavelength Raman laser, its characterized in that: the acousto-optic modulator is 38mm long, is driven at the center frequency of 41MHz, and has the radio frequency power of 15W.
7. YAG ceramic/BaWO in active Q-switched internal cavity type Nd according to claim 14Dual wavelength Raman laser, its characterized in that: the BaWO4The crystal is a-cut BaWO4Crystals of 5X 46.6mm in size3At both end faces, 1112nm, 1240nm and 1376nm (R) were plated<0.2%) anti-reflective coating.
8. YAG ceramic/BaWO in active Q-switched internal cavity type Nd according to claim 14Dual wavelength Raman laser, its characterized in that: the output mirror M2 is a flat mirror coated with a 1240nm partially reflective (R94%), 1376nm partially reflective (R82%) and 1112nm highly reflective (R99.8%) film.
9. YAG ceramic, acousto-optic modulator, BaWO of claims 4 to 64A crystal characterized by: and the Nd: YAG transparent ceramic and BaWO4It is wrapped by indium foil, installed in water-cooled copper block, and cooled in circulating water at 18 deg.C together with acousto-optic modulator.
CN202210010224.5A 2022-01-12 2022-01-12 Active Q-adjusting internal cavity type Nd-YAG ceramic/BaWO4Dual-wavelength Raman laser Withdrawn CN114597758A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210010224.5A CN114597758A (en) 2022-01-12 2022-01-12 Active Q-adjusting internal cavity type Nd-YAG ceramic/BaWO4Dual-wavelength Raman laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210010224.5A CN114597758A (en) 2022-01-12 2022-01-12 Active Q-adjusting internal cavity type Nd-YAG ceramic/BaWO4Dual-wavelength Raman laser

Publications (1)

Publication Number Publication Date
CN114597758A true CN114597758A (en) 2022-06-07

Family

ID=81813839

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210010224.5A Withdrawn CN114597758A (en) 2022-01-12 2022-01-12 Active Q-adjusting internal cavity type Nd-YAG ceramic/BaWO4Dual-wavelength Raman laser

Country Status (1)

Country Link
CN (1) CN114597758A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115296136A (en) * 2022-07-15 2022-11-04 山西大学 Pulse laser space-time distribution regulation and control laser and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115296136A (en) * 2022-07-15 2022-11-04 山西大学 Pulse laser space-time distribution regulation and control laser and method

Similar Documents

Publication Publication Date Title
JP2004503918A (en) Diode pumped cascade laser for deep ultraviolet generation
CN102842847B (en) Intracavity single resonant optical parametric oscillator (ICSRO)
CN210201151U (en) All-solid-state green laser
CN109586153B (en) Neodymium-doped lithium yttrium fluoride nanosecond pulse blue laser
CN112186478A (en) Laser with adjustable power proportion and pulse interval and method
CN111029893B (en) Dual-wavelength alternate Q-switching single longitudinal mode output group pulse laser and laser output method
CN114597758A (en) Active Q-adjusting internal cavity type Nd-YAG ceramic/BaWO4Dual-wavelength Raman laser
CN213278684U (en) Laser with adjustable power proportion and pulse interval
CN212485790U (en) All-solid-state Raman frequency doubling deep red laser
CN201766283U (en) Passive Q-switching testing facility for semi-conductor pump solid lasers
CN102185237B (en) High-power and 1,319 nm single-wavelength continuous laser device
RU2300834C2 (en) Compact continuous solid-state fcd laser (alternatives)
Zayhowski et al. Miniature gain-switched lasers
CN111725698A (en) All-solid-state Raman frequency-doubling deep red laser and laser generation method
WO1994010729A1 (en) A laser and a device for initiating mode-locking of a laser beam
CN215816816U (en) High-power 755nm nanosecond laser
CN219917893U (en) Solid laser with bias selection function
CN216529825U (en) Nanosecond pulse emerald precious stone laser device
CN216598385U (en) Intermediate infrared sequence pulse laser
CN114640014A (en) High-power dual-wavelength human eye safety waveband Raman laser
Kisel et al. Efficient self-frequency Raman conversion in a passively Q-switched diode-pumped Yb: KGd (WO4) 2 laser
CN114649733A (en) High-efficiency diode-pumped 1666nm Raman laser
Fan et al. Generation of UV radiation at 335.5 nm based on frequency-quadrupling of a diode-pumped Nd: YVO 4 laser
CN114597753A (en) 1666nm active Q-switched Raman laser of high-efficiency diode pump
CN116260030A (en) Solid Raman blue pulse laser

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WW01 Invention patent application withdrawn after publication
WW01 Invention patent application withdrawn after publication

Application publication date: 20220607