CN114597758A - Active Q-adjusting internal cavity type Nd-YAG ceramic/BaWO4Dual-wavelength Raman laser - Google Patents
Active Q-adjusting internal cavity type Nd-YAG ceramic/BaWO4Dual-wavelength Raman laser Download PDFInfo
- Publication number
- CN114597758A CN114597758A CN202210010224.5A CN202210010224A CN114597758A CN 114597758 A CN114597758 A CN 114597758A CN 202210010224 A CN202210010224 A CN 202210010224A CN 114597758 A CN114597758 A CN 114597758A
- Authority
- CN
- China
- Prior art keywords
- bawo
- light
- yag
- mirror
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000001069 Raman spectroscopy Methods 0.000 title claims abstract description 45
- 239000000919 ceramic Substances 0.000 title claims abstract description 35
- 229910015805 BaWO4 Inorganic materials 0.000 claims abstract description 29
- 239000013078 crystal Substances 0.000 claims abstract description 20
- 230000008878 coupling Effects 0.000 claims abstract description 16
- 238000010168 coupling process Methods 0.000 claims abstract description 16
- 238000005859 coupling reaction Methods 0.000 claims abstract description 16
- 230000003287 optical effect Effects 0.000 claims abstract description 14
- 238000005086 pumping Methods 0.000 claims abstract description 11
- 239000006117 anti-reflective coating Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000013307 optical fiber Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000001914 filtration Methods 0.000 claims 1
- 230000004907 flux Effects 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910004415 SrWO4 Inorganic materials 0.000 description 1
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/1086—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering using scattering effects, e.g. Raman or Brillouin effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/117—Q-switching using intracavity acousto-optic devices
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Lasers (AREA)
Abstract
The invention discloses active Q-switched internal cavity Nd-YAG ceramic/BaWO4A dual-wavelength Raman laser comprises a pump light source, an optical coupling system, a resonant cavity, Nd, YAG transparent ceramic, an acousto-optic modulator, and BaWO4The resonator comprises an input mirror M1 and an output mirror M2; an optical coupling system, an input mirror M1, Nd: YAG transparent ceramic, an acousto-optic modulator, and BaWO are sequentially arranged along the output direction of the pump light4The crystal, the output mirror M2 and the filter plate; the input mirror M1, Nd-YAG transparent ceramic, acousto-optic modulator, BaWO4The crystal and the light-passing surface of the output mirror M2 are arranged in parallel and are vertical to the propagation direction of the pump light; based on different Raman shifts, the invention realizes effective dual-wavelength operation. At a pumping power of 22.3W and a pulse weightIn the case of a complex frequency of 10kHz, the maximum output power of the first-order Stokes light at 1240nm and the second-order Stokes light at 1376nm were 869mW and 512mW, respectively. The pulse widths of the first-order stokes light and the second-order stokes light are 16ns and 2.6ns, respectively.
Description
Technical Field
The invention belongs to the technical field of solid lasers, and particularly relates to active Q-switched internal cavity type Nd-YAG ceramic/BaWO4A dual wavelength raman laser.
Background
Solid-state raman lasers have received much attention due to their high conversion efficiency, compact size, and good mechanical and thermal properties. To date, Raman-active media include YVO4、SrWO4、KGd(WO4)2、BaWO4、PbWO4Etc. have been used for raman generation. Among the well-known Raman active media, BaWO4The crystal is considered to be a promising raman crystal material due to its higher raman gain efficiency and excellent thermodynamic properties. It is applicable to a wide range of pump pulse durations, from picoseconds to nanoseconds. BaWO4The most intense Raman peak in the crystal is located at 925cm-1And 332cm-1To (3).
In the past, based on 332cm-1And 925cm-1Has been reported about BaWO4Raman studies of crystal applications. Except for 332cm which is widely used-1And 925cm-1Outside the Raman shift, BaWO4The crystal has other important Raman shifts, but BaWO based on other Raman shifts is provided at present4Few research reports related to raman lasers are available.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides active Q-regulating internal cavity type Nd: YAG ceramic/BaWO4A dual wavelength Raman laser solves the problems mentioned in the background art.
The invention provides active Q-switched internal cavity Nd-YAG ceramic/BaWO4A dual-wavelength Raman laser comprises a pump light source, an optical coupling system, a resonant cavity, and a Nd-YAG transparent laserCeramic, acousto-optic modulator, BaWO4The resonator comprises an input mirror M1 and an output mirror M2; along the propagation direction of the pump light, an optical coupling system, an input mirror M1, Nd: YAG transparent ceramic, an acousto-optic modulator, and BaWO are sequentially arranged4The crystal, the output mirror M2 and the filter plate; the input mirror M1, Nd-YAG transparent ceramic, acousto-optic modulator, BaWO4The crystal and the light-passing surface of the output mirror M2 are arranged in parallel and are vertical to the propagation direction of the pump light; the pump light emitted by the pump light source enters an input mirror M1 of the resonant cavity after passing through the optical coupling system, then enters Nd-YAG transparent ceramic to complete the gain process of the laser, and then passes through an acousto-optic modulator and BaWO4The generated parametric light oscillates in the resonant cavity to amplify energy, the laser is output from the output mirror M2, and the residual pump light and the unnecessary wavelength are filtered by the filter plate to retain the required laser wavelength.
Under the conditions that the pumping power of the Raman laser is 22.3W and the pulse repetition frequency is 10kHz, the maximum output power of a first-order Stokes light at 1240nm and the maximum output power of a second-order Stokes light at 1376nm of the Raman laser are 869mW and 512mW respectively; the pulse widths of the first-order stokes light and the second-order stokes light are 16ns and 2.6ns, respectively.
The pumping light source adopts a diode pumping laser with 808nm optical fiber coupling continuous light output.
The optical coupling system is composed of two convex lenses.
The input mirror M1 is a concave mirror with a curvature radius of 1000mm, the light incident surface of the input mirror M1 is coated with an antireflection film with a wavelength of 808nm (R < 0.2%), and the light emergent surface is coated with high-reflection coatings with a wavelength of 1112nm (R > 99.9%), 1240nm (R > 99.8%) and 1376nm (R > 99.8%).
The doping concentration of the Nd: YAG transparent ceramic is 1.0 at.%, and the size is phi 4 multiplied by 5mm3At both end faces, 1112nm, 1240nm and 1376nm (R) were plated<0.2%) anti-reflective coating.
The acousto-optic modulator is 38mm long, is driven at the center frequency of 41MHz, and has the radio frequency power of 15W.
The BaWO4CrystalCutting BaWO for a4Crystals of 5X 46.6mm in size3On both end faces, 1112nm, 1240nm and 1376nm (R) were plated<0.2%) anti-reflective coating.
The output mirror M2 is a flat mirror coated with a 1240nm partially reflective (R94%), 1376nm partially reflective (R82%), and 1112nm highly reflective (R99.8%).
And the Nd: YAG transparent ceramic and BaWO4It is wrapped by indium foil, installed in water-cooled copper block, and cooled in circulating water at 18 deg.C together with acousto-optic modulator.
Compared with the prior art, the invention has the following beneficial effects:
the invention adopts 808nm diode laser as pumping source which is 1240nm (based on 928 cm)-lRaman shift of) and 1376nm (based on 797 cm)-lRaman shift) achieves efficient first-order stokes light and second-order stokes light.
When the pumping power is 22.3W, the average output power is 869mW, the wavelength is 1240nm, and the output power is 512 mW; the wavelength was 1376nm, the pulse repetition rate was 10kHz, and the corresponding light conversion efficiencies were 3.9% and 2.3%, respectively. The phenomenon of variation of raman shift is observed, which is advantageous for scientific research of raman spectroscopy physics.
Drawings
Fig. 1 is a diagram of a raman laser according to the present invention.
Fig. 2 is an output spectrum of the raman laser according to the present invention.
Fig. 3 is a graph showing the dependence of the output power of the raman laser according to the present invention on the pump power.
Fig. 4 is a fundamental and single pulse diagram of a raman laser according to the present invention.
In the figure: 1. a pump light source; 2. an optical coupling system; 3. an input mirror M1; 4. nd is YAG transparent ceramic; 5. an acousto-optic modulator; 6. BaWO4A crystal; 7. an output mirror M2; 8. a filter.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention.
Referring to fig. 1, the present invention provides a technical solution: active Q-adjusting internal cavity type Nd-YAG ceramic/BaWO4A dual-wavelength Raman laser comprises a pumping light source (1), an optical coupling system (2), an input mirror M1(3), Nd, YAG transparent ceramics (4), an acousto-optic modulator (5) and BaWO4The resonant cavity consists of an input mirror M1(3) and an output mirror M2 (7); an optical coupling system (2), an input mirror M1(3), Nd, YAG transparent ceramic (4), an acousto-optic modulator (5), a BaWO4 crystal (6), an output mirror M2(7) and a filter (8) are sequentially arranged along the propagation direction of pump light. The input mirror M1(3), Nd: YAG transparent ceramic (4), acousto-optic modulator (5) and BaWO4The light-passing surfaces of the crystal (6) and the output mirror M2(7) are both arranged in parallel and are perpendicular to the output light beam of the pumping light source (1).
Pump light emitted by a pump light source (1) enters an input mirror M1(3) of a resonant cavity after passing through an optical coupling system (2), then enters an Nd: YAG transparent ceramic (4) to finish the gain process of laser, and then passes through an acousto-optic modulator (5) and BaWO4The crystal (6) generates parametric light with two wavelengths, the generated parametric light oscillates in the resonant cavity so as to amplify energy, laser is output from the output mirror M2(7), and then the filter wave plate (8) filters residual pump light and unwanted wavelengths to retain the needed laser wavelength.
The relevant tests of the output laser were as follows:
when the output mirror M2 is used, dual wavelength raman laser operation at 1240 and 1376nm results. When the pumping power is 22.3W and the pulse repetition frequency is 10kHz, the spectral information output by the stimulated Raman scattering in the cavity is monitored. The obtained spectrum comprises a fundamental wavelength of 1112nm and raman wavelengths of 1240nm and 1376nm, and a spectrum diagram is depicted in fig. 2. The center wavelengths of the fundamental wavelength, the first-order Stokes light and the second-order Stokes light are 1112nm, 1240nm and 1376nm, respectively, corresponding to 928cm-1And 797cm-1Raman shift of (1).
Fig. 3 shows the dependence of the output power of the first-order stokes light and the second-order stokes light on the pump power at 5kHz, 10kHz and 15 kHz. It can be seen that the maximum output power of the first-order stokes light and the second-order stokes light wave reaches 869mW and 512mW respectively when the pulse repetition frequency is 10 kHz. It is clear that the output power strongly depends on the pulse repetition frequency. At low pump powers, the dielectric thermal effect is insignificant at low or high pulse repetition rates, but the single pulse energy at low pulse repetition rates (5kHz) is higher than at high pulse repetition rates (10kHz and 15kHz), while higher pulse energies generally result in higher conversion efficiencies from the fundamental laser to the stokes laser. Thus, at low incident pump power, the average output power of the stokes light at a 5kHz pulse repetition frequency is higher than the power at 10kHz and 15kHz pulse repetition frequencies, respectively.
Typical single pulse shapes of the fundamental and raman pulses are shown in fig. 4 at a pump power of 22.3W, pulse repetition frequency of 10 kHz. Pulse widths of the fundamental wave, first-order stokes light and second-order stokes light were measured as 76ns, 16ns and 2.6ns, respectively. It can be seen that the frequency conversion of the raman scattering leads to a shortening of the pulse of the stokes light component.
The above examples are provided only for the purpose of describing the present invention, and are not intended to limit the scope of the present invention. The scope of the invention is defined by the appended claims. Various equivalent substitutions and modifications can be made without departing from the spirit and principles of the invention, and are intended to be within the scope of the invention.
Claims (9)
1. Active Q-adjusting internal cavity type Nd-YAG ceramic/BaWO4Dual wavelength Raman laser, its characterized in that: comprises a pump light source, an optical coupling system, a resonant cavity, Nd, YAG transparent ceramics, an acousto-optic modulator, and BaWO4The resonant cavity consists of an input mirror M1 and an output mirror M2; along the propagation direction of the pump light, an optical coupling system, an input mirror M1, Nd: YAG transparent ceramic, an acousto-optic modulator, and BaWO are sequentially arranged4The crystal, the output mirror M2 and the filter plate; the input mirror M1, Nd-YAG transparent ceramic, acousto-optic modulator, BaWO4The crystal and the light-passing surface of the output mirror M2 are arranged in parallel and are vertical to the propagation direction of the pump light; pump light flux emitted by pump light sourceAfter passing through the optical coupling system, enters an input mirror M1 of the resonant cavity, then enters Nd-YAG transparent ceramic to complete the gain process of laser, and then passes through an acousto-optic modulator and BaWO4Generating parametric light with two wavelengths after the crystal, oscillating the generated parametric light in the resonant cavity so as to amplify energy, outputting laser from the output mirror, filtering out residual pump light and unnecessary wavelengths by the filter plate, and reserving required laser wavelength;
under the conditions that the pumping power of the Raman laser is 22.3W and the pulse repetition frequency is 10kHz, the maximum output power of a first-order Stokes light at 1240nm and the maximum output power of a second-order Stokes light at 1376nm of the Raman laser are 869mW and 512mW respectively; the pulse widths of the first-order stokes light and the second-order stokes light are 16ns and 2.6ns, respectively.
2. YAG ceramic/BaWO in active Q-switched internal cavity type Nd according to claim 14Dual wavelength Raman laser, its characterized in that: the pumping light source adopts a diode laser with 808nm optical fiber coupling continuous light output.
3. YAG ceramic/BaWO in active Q-switched internal cavity type Nd according to claim 14Dual wavelength Raman laser, its characterized in that: the optical coupling system is composed of two convex lenses.
4. YAG ceramic/BaWO in active Q-switched internal cavity type Nd according to claim 14Dual wavelength Raman laser, its characterized in that: the input mirror M1 is a concave mirror with a curvature radius of 1000mm, and the light incident surface of the input mirror M1 is coated with an antireflection film (R) of 808nm<0.2%), and the light-emitting surface is plated with 1112nm (R)>99.9％)、1240nm(R>99.8%) and 1376nm (R)>99.8%) of a highly reflective coating.
5. YAG ceramic/BaWO in active Q-switched internal cavity type Nd according to claim 14Dual wavelength Raman laser, its characterized in that: the doping concentration of the Nd: YAG transparent ceramic is 1.0 at.%, and the size is phi 4 multiplied by 5mm3On both end faces thereof, 1112nm, 1240nm and 1376 are platednm(R<0.2%) anti-reflective coating.
6. YAG ceramic/BaWO in active Q-switched internal cavity type Nd according to claim 14Dual wavelength Raman laser, its characterized in that: the acousto-optic modulator is 38mm long, is driven at the center frequency of 41MHz, and has the radio frequency power of 15W.
7. YAG ceramic/BaWO in active Q-switched internal cavity type Nd according to claim 14Dual wavelength Raman laser, its characterized in that: the BaWO4The crystal is a-cut BaWO4Crystals of 5X 46.6mm in size3At both end faces, 1112nm, 1240nm and 1376nm (R) were plated<0.2%) anti-reflective coating.
8. YAG ceramic/BaWO in active Q-switched internal cavity type Nd according to claim 14Dual wavelength Raman laser, its characterized in that: the output mirror M2 is a flat mirror coated with a 1240nm partially reflective (R94%), 1376nm partially reflective (R82%) and 1112nm highly reflective (R99.8%) film.
9. YAG ceramic, acousto-optic modulator, BaWO of claims 4 to 64A crystal characterized by: and the Nd: YAG transparent ceramic and BaWO4It is wrapped by indium foil, installed in water-cooled copper block, and cooled in circulating water at 18 deg.C together with acousto-optic modulator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210010224.5A CN114597758A (en) | 2022-01-12 | 2022-01-12 | Active Q-adjusting internal cavity type Nd-YAG ceramic/BaWO4Dual-wavelength Raman laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210010224.5A CN114597758A (en) | 2022-01-12 | 2022-01-12 | Active Q-adjusting internal cavity type Nd-YAG ceramic/BaWO4Dual-wavelength Raman laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114597758A true CN114597758A (en) | 2022-06-07 |
Family
ID=81813839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210010224.5A Withdrawn CN114597758A (en) | 2022-01-12 | 2022-01-12 | Active Q-adjusting internal cavity type Nd-YAG ceramic/BaWO4Dual-wavelength Raman laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114597758A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115296136A (en) * | 2022-07-15 | 2022-11-04 | 山西大学 | A kind of pulsed laser spatiotemporal distribution control laser and method |
| CN116031746A (en) * | 2023-02-10 | 2023-04-28 | 中国人民解放军陆军工程大学 | LD end-pumped eye-safe Raman laser |
-
2022
- 2022-01-12 CN CN202210010224.5A patent/CN114597758A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115296136A (en) * | 2022-07-15 | 2022-11-04 | 山西大学 | A kind of pulsed laser spatiotemporal distribution control laser and method |
| CN116031746A (en) * | 2023-02-10 | 2023-04-28 | 中国人民解放军陆军工程大学 | LD end-pumped eye-safe Raman laser |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2004503918A (en) | Diode pumped cascade laser for deep ultraviolet generation | |
| CN114597758A (en) | Active Q-adjusting internal cavity type Nd-YAG ceramic/BaWO4Dual-wavelength Raman laser | |
| CN107863682B (en) | A nonlinear optical frequency conversion device for realizing 1064nm to multi-wavelength red light | |
| CN109586153B (en) | Neodymium-doped lithium yttrium fluoride nanosecond pulse blue laser | |
| CN112186478A (en) | Laser with adjustable power proportion and pulse interval and method | |
| CN105846302A (en) | Novel Kerr-lens mode-locking Cr: ZnS femtosecond laser | |
| CN111029893A (en) | Dual-wavelength alternate Q-switching single longitudinal mode output group pulse laser and laser output method | |
| CN213278684U (en) | A laser with adjustable power ratio and pulse interval | |
| CN103117509B (en) | 696nm red light total-solid laser of Blu-ray pump praseodymium-doped yttrium lithium fluoride | |
| CN208241070U (en) | THz wave oscillator | |
| CN201766283U (en) | Passive Q-switching testing facility for semi-conductor pump solid lasers | |
| WO1994010729A1 (en) | A laser and a device for initiating mode-locking of a laser beam | |
| CN102244345A (en) | Tunable titanium jewelry laser of 588nm yellow light pump | |
| CN102185237B (en) | High-power and 1,319 nm single-wavelength continuous laser device | |
| CN212485790U (en) | An all-solid-state Raman frequency-doubling deep red laser | |
| CN114204398A (en) | Intermediate infrared sequence pulse laser | |
| Zayhowski et al. | Miniature gain-switched lasers | |
| CN113346343A (en) | Intracavity cascade harmonic conversion tunable laser | |
| CN1624992A (en) | Self-excited solid Raman laser | |
| RU2300834C2 (en) | Compact continuous solid-state fcd laser (alternatives) | |
| CN206471669U (en) | A kind of laser of quadruple device | |
| CN215816816U (en) | High-power 755nm nanosecond laser | |
| CN216529825U (en) | Nanosecond pulse emerald precious stone laser device | |
| CN114640014A (en) | High-power dual-wavelength human eye safety waveband Raman laser | |
| Kisel et al. | Efficient self-frequency Raman conversion in a passively Q-switched diode-pumped Yb: KGd (WO4) 2 laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20220607 |