CN220066398U - Ultraviolet single-frequency laser device based on praseodymium-doped annular cavity intracavity frequency multiplication - Google Patents
Ultraviolet single-frequency laser device based on praseodymium-doped annular cavity intracavity frequency multiplication Download PDFInfo
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- 229910052777 Praseodymium Inorganic materials 0.000 abstract description 2
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 9
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- MCSXGCZMEPXKIW-UHFFFAOYSA-N 3-hydroxy-4-[(4-methyl-2-nitrophenyl)diazenyl]-N-(3-nitrophenyl)naphthalene-2-carboxamide Chemical compound Cc1ccc(N=Nc2c(O)c(cc3ccccc23)C(=O)Nc2cccc(c2)[N+]([O-])=O)c(c1)[N+]([O-])=O MCSXGCZMEPXKIW-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 238000001237 Raman spectrum Methods 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
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- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
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- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
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- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
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Abstract
The utility model discloses an ultraviolet single-frequency laser device based on praseodymium (Pr) doped ring cavity inner frequency multiplication, which comprises: the first blue light semiconductor laser emits pump laser to enter the praseodymium-doped laser material through the first focusing lens and the first annular laser cavity end face mirror, the praseodymium-doped laser material absorbs and converts the pump laser into praseodymium-doped visible light laser, the praseodymium-doped laser is unidirectionally transmitted along a light path in a first annular laser cavity light path, in-process frequency multiplication is carried out through the frequency multiplication crystal, ultraviolet single-frequency laser is output from the fourth annular laser cavity end face mirror, in-process reverse light rotates through polarization of the optical rotatory plate and the half-wave plate, and loss is increased, so that vibration cannot be started. Ultraviolet single-frequency laser can be rapidly and effectively obtained through praseodymium-doped laser material and frequency doubling in the laser annular cavity.
Description
Technical Field
The utility model relates to the field of ultraviolet single-frequency laser devices, in particular to an ultraviolet single-frequency laser device based on frequency multiplication in a praseodymium-doped annular cavity.
Background
This patent belongs to laser technology field. Ultraviolet laser has important application value in various fields such as Raman spectrum, photoetching, microscopic imaging, optical detection, life science and the like, and currently, under the condition that solid ultraviolet laser which is not directly generated is not available, nonlinear frequency conversion is a main means for obtaining ultraviolet laser. The most common nonlinear frequency conversion method is to convert more than three times of higher harmonics of the Q-switched pulse laser into ultraviolet pulse laser outside a cavity through neodymium (Nd) doped or ytterbium (Yb) ion doped, but the higher harmonic laser system is complex and huge, and has low conversion efficiency, high cost and difficult maintenance. Moreover, for related applications such as raman spectroscopy, optical detection and life sciences, low noise, low peak power uv single frequency continuous wave lasers are required, which presents a greater challenge for higher harmonic frequency conversion, as low peak power results in low conversion efficiency, especially where multiple frequency conversions are required. In order to boost the output power in the case of continuous waves, researchers often need to use a so-called resonance enhancement technique (oscillation enhancement) to precisely regulate the laser cavity length through feedback, and the extra resonance enhancement technique greatly increases the complexity of the uv single-frequency continuous wave laser. As shown in FIG. 1, a 266nm deep ultraviolet single frequency continuous wave Laser reported in document [1], where the uppermost continuous wave Green light (CW Green Laser) is simply drawn, is actually a Green Laser obtained by Nd near infrared Laser frequency doubling, and the complexity of the ultraviolet single frequency continuous wave Laser system sees a spot.
Disclosure of Invention
Accordingly, the present utility model is directed to an ultraviolet single-frequency laser device based on frequency multiplication in praseodymium-doped annular cavity, which can solve the above-mentioned problems.
The utility model provides an ultraviolet single-frequency laser device based on frequency multiplication in a praseodymium-doped annular cavity, which comprises: the laser comprises a first blue light semiconductor laser, a first focusing lens, a first annular laser cavity end mirror, a second annular laser cavity end mirror, a third annular laser cavity end mirror, a fourth annular laser cavity end mirror, a fifth annular laser cavity end mirror, a sixth annular laser cavity end mirror, praseodymium-doped laser material, a rotator, a half-wave plate and a frequency doubling crystal;
the incident light path of the first blue light semiconductor laser is sequentially provided with the first focusing lens, a first annular laser cavity end mirror, praseodymium-doped laser material and a second annular laser cavity end mirror; the third annular laser cavity end mirror is arranged on the reflection light path of the second annular laser cavity end mirror; the half wave plate, the rotator and the fourth annular laser cavity end mirror are sequentially arranged on the reflection light path of the third annular laser cavity end mirror; the frequency doubling crystal and the fifth annular laser cavity end mirror are sequentially arranged on the reflection light path of the fourth annular laser cavity end mirror; the sixth annular laser cavity end mirror is arranged on the reflection light path of the fifth annular laser cavity end mirror; the first annular laser cavity end mirror is arranged on a reflection light path of the sixth annular laser cavity end mirror; the incident light path of the first blue light semiconductor laser, the reflecting light path of the second annular laser cavity end mirror, the reflecting light path of the third annular laser cavity end mirror, the reflecting light path of the fourth annular laser cavity end mirror, the reflecting light path of the fifth annular laser cavity end mirror and the reflecting light path of the sixth annular laser cavity end mirror form a first annular laser cavity light path;
the first blue light semiconductor laser emits pump laser to be incident into the praseodymium-doped laser material through the first focusing lens and the first annular laser cavity end face mirror, the praseodymium-doped laser material absorbs and converts the pump laser into praseodymium-doped visible light laser, the praseodymium-doped laser is unidirectionally transmitted along a light path in a first annular laser cavity light path, ultraviolet single-frequency laser is output from the fourth annular laser cavity end face mirror after frequency multiplication through the frequency doubling crystal in the process, and reverse transmission light cannot be vibrated after polarization rotation of the reverse transmission light is caused by the optical rotator and the half-wave plate in the process, so that reverse light is lost. The first annular laser cavity end face mirror is a curved mirror, and a coating film of the first annular laser cavity end face mirror can be high in transmittance to the pump laser and high in reflection to the praseodymium-doped visible light laser.
The second annular laser cavity end face mirror, the fifth annular laser cavity end face mirror and the sixth annular laser cavity end face mirror are all curved mirrors, and the coating films of the second annular laser cavity end face mirror, the fifth annular laser cavity end face mirror and the sixth annular laser cavity end face mirror can be highly reflected to the praseodymium-doped visible light laser.
The third annular laser cavity end mirror is a plane mirror, and the coating film of the third annular laser cavity end mirror can be used for reflecting the praseodymium-doped visible light laser.
The fourth annular laser cavity end face mirror is a curved mirror, and a coating film of the fourth annular laser cavity end face mirror can be used for reflecting praseodymium-doped visible light laser and transmitting ultraviolet laser to be used as an output mirror of ultraviolet laser.
Further, the method further comprises the following steps: a second blue semiconductor laser, a second focusing lens;
the incident light path of the second blue light semiconductor laser is sequentially provided with the second focusing lens, a second annular laser cavity end mirror, praseodymium-doped laser material and a first annular laser cavity end mirror;
the first semiconductor laser and the second semiconductor laser emit pump light simultaneously, and after being focused by the first focusing lens and the second focusing lens, the pump light is transmitted by the first annular laser cavity end mirror and the second annular laser cavity end mirror respectively and is incident into the praseodymium-doped laser material, the praseodymium-doped laser material absorbs and converts the pump light into praseodymium-doped visible light laser, and then the praseodymium-doped visible light laser is transmitted in a unidirectional mode along a light path in a first annular laser cavity light path respectively, and in the process, the frequency multiplication crystal is used for doubling the frequency and then the ultraviolet single-frequency laser is output from the fourth annular laser cavity end mirror.
The fourth annular laser cavity end face mirror can also be a plane mirror, and the coating film of the fourth annular laser cavity end face mirror can be high in reflection to the praseodymium-doped visible light laser and high in transmission to the ultraviolet laser and is used as an output mirror of the ultraviolet laser.
The first blue light semiconductor laser emits pumping laser to be incident into the praseodymium-doped laser material through the first focusing lens and the first annular laser cavity end face mirror, the praseodymium-doped laser material absorbs and converts the pumping laser into praseodymium-doped visible light laser, and then the praseodymium-doped visible light laser is unidirectionally transmitted along a light path in a second annular laser cavity formed by the first annular laser cavity end face mirror, the second annular laser cavity end face mirror, the third annular laser cavity end face mirror and the fourth annular laser cavity end face mirror, ultraviolet single-frequency laser is output from the fourth annular laser cavity end face mirror after frequency multiplication is carried out through the frequency multiplication crystal in the process, and reverse transmission light cannot be started to vibrate to consume reverse light after polarization rotation of the reverse transmission light is carried out through the optical rotatory plate and the half-wave plate in the process.
The first blue light semiconductor laser and the second blue light semiconductor laser emit pumping light simultaneously, the pumping light is focused by the first focusing lens and the second focusing lens respectively, the pumping light is transmitted by the first annular laser cavity end face mirror and the second annular laser cavity end face mirror respectively, the pumping light is absorbed and converted into praseodymium-doped visible light laser by the praseodymium-doped laser material, the praseodymium-doped visible light laser is transmitted in the second annular laser cavity in a unidirectional mode along a light path respectively, and ultraviolet single-frequency laser is output from the fourth annular laser cavity end face mirror after frequency multiplication is carried out through the frequency multiplication crystal in the process.
Wherein the rotator is a TGG crystal applying a magnetic field, and the praseodymium-doped laser material is Pr:LiYF 4 And (5) a crystal.
The utility model has the beneficial effects that:
firstly, pr ion has richer laser in visible light wave band by adopting Pr-doped laser material as gain material, so that ultraviolet laser can be obtained by frequency doubling only once, namely second harmonic, which is the most effective one in various nonlinear frequency conversion, and ultraviolet laser can be obtained rapidly and effectively.
And secondly, the output of ultraviolet single-frequency laser is realized by arranging the annular cavity, which is different from the laser of the standing wave cavity which oscillates back and forth in the cavity to form laser, and the laser in the annular cavity runs unidirectionally in the cavity, so that the space hole burning effect (the space hole burning is the reason for generating multiple longitudinal modes) of the standing wave cavity can be eliminated, and the single-frequency laser output is obtained.
Thirdly, the six-mirror annular cavity is arranged, so that the beam waist of small light spots in the cavity is more, and the frequency doubling crystal can be placed at the beam waist, so that higher power density is obtained, and the nonlinear frequency conversion efficiency is improved; further, by arranging two blue semiconductor lasers to pump Pr-doped laser crystals from two ends of the laser crystal at the same time, better mode matching is obtained, and meanwhile, the thermal effect in the laser crystal is relieved, so that the laser output power can be improved.
Drawings
In order to more clearly illustrate the embodiments of the present utility model or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below. It is evident that the drawings in the following description are only some embodiments of the present utility model and that other drawings may be obtained from these drawings without inventive effort for a person of ordinary skill in the art.
Fig. 1 is a simplified schematic diagram of an extra-cavity frequency doubling ultraviolet single-frequency continuous wave laser device based on a resonance enhancement technology in the background art of the utility model.
FIG. 2 is a schematic diagram of a single-end pumped praseodymium-doped six-mirror annular cavity frequency multiplication generating ultraviolet single-frequency laser device in accordance with an embodiment of the present utility model.
Fig. 3 is a graph of single frequency laser output power in accordance with an embodiment of the present utility model.
FIG. 4 is a single frequency laser spectrum diagram in accordance with an embodiment of the present utility model.
FIG. 5 is a graph showing the single frequency laser characteristics measured by an F-P scanning interferometer in accordance with one embodiment of the present utility model.
FIG. 6 is a schematic diagram of a device for generating ultraviolet single-frequency laser by double-frequency in a praseodymium-doped six-mirror annular cavity of a double-end pump in a second embodiment of the utility model.
FIG. 7 is a schematic diagram of a device for generating ultraviolet single-frequency laser by frequency doubling in a praseodymium-doped four-mirror annular cavity of a single-end pump in a third embodiment of the utility model.
FIG. 8 is a schematic diagram of a device for generating ultraviolet single-frequency laser by double-end pumping praseodymium-doped four-mirror annular cavity intracavity frequency doubling in a fourth embodiment of the utility model.
Detailed Description
For the convenience of understanding by those skilled in the art, the structure of the present utility model will now be described in further detail with reference to the accompanying drawings.
Example 1
As shown in fig. 2, the present embodiment provides an ultraviolet single-frequency laser device based on frequency multiplication in a praseodymium-doped annular cavity, which includes: the laser comprises a first blue semiconductor laser 1, a first focusing lens 2, a first annular laser cavity end mirror 3.1, a second annular laser cavity end mirror 3.2, a third annular laser cavity end mirror 3.3, a fourth annular laser cavity end mirror 3.4, a fifth annular laser cavity end mirror 3.5, a sixth annular laser cavity end mirror 3.6, praseodymium-doped laser material 4, an optical rotator 5, a half-wave plate 6 and a frequency doubling crystal 7;
in this embodiment, the blue semiconductor laser is used as a pumping source of the praseodymium-doped laser material, and Pr ions are excited in a visible light band relatively abundantly, so that ultraviolet laser can be obtained only by frequency multiplication once, and frequency multiplication, namely second harmonic, is the most effective one of various nonlinear frequency conversions.
The incident light path of the first blue light semiconductor laser 1 is sequentially provided with a first focusing lens 2, a first annular laser cavity end face mirror 3.1, praseodymium-doped laser material 4 and a second annular laser cavity end face mirror 3.2; the third annular laser cavity end mirror 3.3 is arranged on the reflection light path of the second annular laser cavity end mirror 3.2; the half-wave plate 6, the rotator 5 and the fourth annular laser cavity end mirror 3.4 are sequentially arranged on the reflection light path of the third annular laser cavity end mirror 3.3; the frequency doubling crystal 7 and the fifth annular laser cavity end mirror 3.5 are sequentially arranged on the reflection light path of the fourth annular laser cavity end mirror 3.4; the sixth annular laser cavity end mirror 3.6 is arranged on the reflection light path of the fifth annular laser cavity end mirror 3.5; the first annular laser cavity end mirror 3.1 is arranged on a reflection light path of the sixth annular laser cavity end mirror 3.6; an incident light path of the first blue light semiconductor laser 1.1, a reflection light path of the second annular laser cavity end mirror 3.2, a reflection light path of the third annular laser cavity end mirror 3.3, a reflection light path of the fourth annular laser cavity end mirror 3.4, a reflection light path of the fifth annular laser cavity end mirror 3.5 and a reflection light path of the sixth annular laser cavity end mirror 3.6 form a first annular laser cavity light path;
the first blue light semiconductor laser 1 emits pump laser to enter the praseodymium-doped laser material 4 through the first focusing lens 2 and the first annular laser cavity end face mirror 3.1, the praseodymium-doped laser material 4 absorbs and converts the pump laser into praseodymium-doped visible light laser and then transmits the praseodymium-doped visible light laser unidirectionally along a light path in a first annular laser cavity light path, the ultraviolet single-frequency laser is output from the fourth annular laser cavity end face mirror 3.4 after frequency multiplication is carried out through the frequency multiplication crystal 7 in the process, and the reverse transmission light in the process cannot vibrate after polarization of the reverse transmission light rotates through the optical rotator 5 and the half-wave plate 6 so as to consume the reverse light.
The first annular laser cavity end face mirror 3.1 is a curved mirror, and a coating film of the first annular laser cavity end face mirror can be high in transmittance to the pump laser and high in reflection to the praseodymium-doped visible light laser.
The second annular laser cavity end face mirror 3.2, the fifth annular laser cavity end face mirror 3.5 and the sixth annular laser cavity end face mirror 3.6 are all curved mirrors, and the coating films of the curved mirrors can be highly reflected to the praseodymium-doped visible light laser.
The third annular laser cavity end face mirror 3.3 is a plane mirror, and the coating film can be used for reflecting the praseodymium-doped visible light laser.
The fourth annular laser cavity end face mirror 3.4 is a curved mirror, and a coating film of the fourth annular laser cavity end face mirror can be used for reflecting the praseodymium-doped visible light laser and transmitting the ultraviolet laser, and is used as an output mirror of the ultraviolet laser.
Wherein the optical rotatory plate 5 is TGG crystal with magnetic field, and the praseodymium-doped laser material 4 is Pr:LiYF 4 And (5) a crystal.
In this embodiment, the praseodymium doped laser material is a working substance of the laser. The pump light is absorbed by the laser crystal, and praseodymium-doped visible light laser is generated when the gain in the annular cavity is equal to the loss and reaches the laser threshold. To achieve single frequency lasers, an annular cavity and optical elements that block the reverse operation of the laser are required. The annular cavity consists of six coated end mirrors of 3.1, 3.2, 3.3, 3.4, 3.5 and 3.6; the rotator 5 and the half-wave plate 6 combine to rotate the polarization of the reverse transmission light, so that the reverse light is lost, and cannot vibrate, thereby completely eliminating the space hole burning effect and obtaining single-frequency laser. In order to obtain single-frequency laser output in the ultraviolet band, a frequency doubling crystal 7 is also inserted into the laser cavity, and the single-frequency visible light frequency in the cavity is converted into ultraviolet laser and output from the end mirror 3.4. Unlike the standing wave cavity laser, which oscillates back and forth in the cavity to form laser, the laser in the ring cavity runs unidirectionally in the cavity, so that the space hole burning effect of the standing wave cavity (the space hole burning is the reason for generating multiple longitudinal modes) can be eliminated, and single-frequency laser output can be obtained.
In this example, the laser of the present utility model was used to obtain ultraviolet single-frequency laser outputs, the output powers were measured with a power meter (as shown in fig. 3, the output single-frequency laser power was 225mW when the absorption power was 4W), the laser spectra were measured with a spectrometer (as shown in fig. 4, the peak wavelength was 319.8 nm), and the single-frequency characteristics were measured with an F-P scanning interferometer (as shown in fig. 5, it was confirmed that the obtained ultraviolet laser was single-frequency).
It should be noted that, this patent scheme not only can be used to 319.8nm single frequency laser in the experiment produce, can also be used to:
(1) And generating frequency doubling ultraviolet single-frequency laser of other emission lines of Pr ions. Pr ions are doped into different matrix materials, so that different emission lines in the visible light wave band can be generated, and common emission lines are as follows: the green light wave band between 522 and 545nm, so that the device can obtain the deep ultraviolet single-frequency laser with the wavelength of 261 to 273 nm; the praseodymium-doped laser material is utilized to obtain an orange light wave band near 600-620nm, and then ultraviolet single-frequency laser of 300-310nm can be obtained after frequency multiplication; the praseodymium-doped laser material is utilized to obtain a red light wave band near 640-670nm, and then ultraviolet single-frequency laser of 320-335nm can be obtained after frequency multiplication; the praseodymium-doped laser material is utilized to obtain a deep red light wave band near 690-750nm, and then ultraviolet single-frequency laser at 345-375nm can be obtained after frequency multiplication.
(2) Others can directly produce laser materials in the visible band. Such as dysprosium (Dy), samarium (Sm), terbium (Tb) and erbium (Er).
Example two
As shown in fig. 6, this embodiment provides an ultraviolet single-frequency laser device based on frequency doubling in a praseodymium-doped annular cavity, and a second blue semiconductor laser 1.2 and a second focusing lens 2.2 are added on the basis of the first embodiment.
The incident light path of the second blue light semiconductor laser 1.2 is sequentially provided with a second focusing lens 2.2, a second annular laser cavity end mirror 3.2, praseodymium-doped laser material 4 and a first annular laser cavity end mirror 3.1;
the first semiconductor laser 1.1 and the second semiconductor laser 1.2 emit pump light at the same time, and after being focused by the first focusing lens 2.1 and the second focusing lens 2.2, the pump light is transmitted by the first annular laser cavity end mirror 3.1 and the second annular laser cavity end mirror 3.2 respectively and is incident into the praseodymium-doped laser material 4, the praseodymium-doped laser material 4 absorbs and converts the pump light into praseodymium-doped visible light laser, and then the praseodymium-doped visible light laser is transmitted in a unidirectional manner along a light path in a first annular laser cavity light path respectively, and in the process, the frequency doubling crystal 7 is used for doubling the frequency and then the ultraviolet single-frequency laser is output from the fourth annular laser cavity end mirror 3.4.
In this embodiment, in order to further increase the output power of the ultraviolet single-frequency laser, a blue semiconductor laser 1.2 may be added to the right end of the second ring laser cavity end mirror 3.2 and a second focusing mirror 2.2 may be correspondingly added. Compared with the method that a pump source with higher power is used at one end, the double-end pump has the advantages that the pump power is increased, the mode matching efficiency is improved, the gain distribution is improved, the thermal effect of the laser crystal is relieved, and the effect of 1+1>2 is generated.
Example III
As shown in fig. 7, this embodiment provides an ultraviolet single-frequency laser device based on frequency doubling in a praseodymium-doped annular cavity, which reduces a fifth annular laser cavity end mirror 3.5 and a sixth annular laser cavity end mirror 3.6 on the basis of the first embodiment, the fourth annular laser cavity end mirror 3.4 is changed into a plane mirror, and a coating film thereof can be highly reflected to the praseodymium-doped visible light laser and highly transmitted to the ultraviolet laser to be used as an output mirror of the ultraviolet laser.
The first blue light semiconductor laser 1.1 emits pump laser to be incident into the praseodymium-doped laser material 4 through the first focusing lens 2.1 and the first annular laser cavity end mirror 3.1, the praseodymium-doped laser material 4 absorbs and converts the pump light into praseodymium-doped visible light laser, and then the praseodymium-doped visible light laser is unidirectionally transmitted along a light path in a second annular laser cavity formed by the first annular laser cavity end mirror 3.1, the second annular laser cavity end mirror 3.2, the third annular laser cavity end mirror 3.3 and the fourth annular laser cavity end mirror 3.4, ultraviolet single-frequency laser is output from the fourth annular laser cavity end mirror 3.4 after frequency multiplication is carried out through the frequency multiplication crystal 7 in the process, and reverse light rotates through polarization of the optical rotatory plate 5 and the half-wave plate 6 in the process, so that loss is increased, and laser in the cavity cannot vibrate, and the laser in the cavity is completely unidirectionally transmitted.
In this embodiment, the second ring laser cavity may be formed by a simple four-mirror structure, but under the condition of equal pumping power, the power and efficiency of the output ultraviolet single-frequency laser should be much lower than those of the six-mirror cavities of the first and second embodiments because the beam waist point of the small spot in the cavity is insufficient, but the device is simple and can output the ultraviolet single-frequency laser.
Example IV
As shown in fig. 8, this embodiment provides an ultraviolet single-frequency laser device based on frequency doubling in a praseodymium-doped annular cavity, and a second blue semiconductor laser 1.2 and a second focusing lens 2.2 are added on the basis of the third embodiment.
The first blue semiconductor laser 1.2 and the second blue semiconductor laser 2.2 emit pump light at the same time, and after being focused by the first focusing lens 1.1 and the second focusing lens 1.2, the pump light is transmitted by the first annular laser cavity end mirror 2.1 and the second annular laser cavity end mirror 2.2 respectively and is incident into the praseodymium-doped laser material 4, the praseodymium-doped laser material 4 absorbs and converts the pump light into praseodymium-doped visible light laser, and then the praseodymium-doped visible light laser is transmitted in the second annular laser cavity in a unidirectional manner along a light path, and in the process, the frequency is doubled by the frequency doubling crystal 7 and then ultraviolet single-frequency laser is output from the fourth annular laser cavity end mirror 3.4.
In this embodiment, in order to further increase the output power of the ultraviolet single-frequency laser, a blue semiconductor laser 1.2 may be added to the right end of the second ring laser cavity end mirror 3.2 and a second focusing mirror 2.2 may be correspondingly added. Compared with the method that a pump source with higher power is used at one end, the double-end pump has the advantages that the pump power is increased, the mode matching efficiency is improved, the gain distribution is improved, the thermal effect of the laser crystal is relieved, and the effect of 1+1>2 is generated.
It should be noted that in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The utility model may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware. The use of the words first, second, third, etc. do not denote any order. These words may be interpreted as names.
While preferred embodiments of the present utility model have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiments and all such alterations and modifications as fall within the scope of the utility model.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present utility model without departing from the spirit or scope of the utility model. Thus, it is intended that the present utility model also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
In the present utility model, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present utility model can be understood by those of ordinary skill in the art according to the specific circumstances.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present utility model. In this specification, schematic representations of the above terms should not be understood as necessarily being directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
Claims (10)
1. An ultraviolet single-frequency laser device based on frequency multiplication in a praseodymium-doped annular cavity is characterized by comprising: the laser comprises a first blue light semiconductor laser, a first focusing lens, a first annular laser cavity end mirror, a second annular laser cavity end mirror, a third annular laser cavity end mirror, a fourth annular laser cavity end mirror, a fifth annular laser cavity end mirror, a sixth annular laser cavity end mirror, praseodymium-doped laser material, a rotator, a half-wave plate and a frequency doubling crystal;
the incident light path of the first blue light semiconductor laser is sequentially provided with the first focusing lens, a first annular laser cavity end mirror, praseodymium-doped laser material and a second annular laser cavity end mirror; the third annular laser cavity end mirror is arranged on the reflection light path of the second annular laser cavity end mirror; the half wave plate, the rotator and the fourth annular laser cavity end mirror are sequentially arranged on the reflection light path of the third annular laser cavity end mirror; the frequency doubling crystal and the fifth annular laser cavity end mirror are sequentially arranged on the reflection light path of the fourth annular laser cavity end mirror; the sixth annular laser cavity end mirror is arranged on the reflection light path of the fifth annular laser cavity end mirror; the first annular laser cavity end mirror is arranged on a reflection light path of the sixth annular laser cavity end mirror; the incident light path of the first blue light semiconductor laser, the reflecting light path of the second annular laser cavity end mirror, the reflecting light path of the third annular laser cavity end mirror, the reflecting light path of the fourth annular laser cavity end mirror, the reflecting light path of the fifth annular laser cavity end mirror and the reflecting light path of the sixth annular laser cavity end mirror form a first annular laser cavity light path;
the first blue light semiconductor laser emits pump laser to enter the praseodymium-doped laser material through the first focusing lens and the first annular laser cavity end face mirror, the praseodymium-doped laser material absorbs and converts the pump laser into praseodymium-doped visible light laser, the praseodymium-doped laser is unidirectionally transmitted along a light path in a first annular laser cavity light path, in-process frequency multiplication is carried out through the frequency multiplication crystal, ultraviolet single-frequency laser is output from the fourth annular laser cavity end face mirror, in-process reverse light rotates through polarization of the optical rotatory plate and the half-wave plate, and loss is increased, so that vibration cannot be started.
2. The ultraviolet single-frequency laser device based on praseodymium-doped annular cavity inner frequency multiplication of claim 1, wherein the first annular laser cavity end mirror is a curved mirror, and a coating film of the first annular laser cavity end mirror can be highly transparent to the pump laser and highly reflective to the praseodymium-doped visible light laser.
3. The ultraviolet single-frequency laser device based on praseodymium-doped annular cavity inner frequency multiplication of claim 1, wherein the second annular laser cavity end mirror, the fifth annular laser cavity end mirror and the sixth annular laser cavity end mirror are all curved mirrors, and the coating films of the curved mirrors can be highly reflected to the praseodymium-doped visible light laser.
4. The ultraviolet single-frequency laser device based on praseodymium-doped annular cavity inner frequency multiplication of claim 1, wherein the third annular laser cavity end mirror is a plane mirror, and a coating film of the third annular laser cavity end mirror can be highly reflected to the praseodymium-doped visible light laser.
5. The ultraviolet single-frequency laser device based on praseodymium-doped annular cavity inner frequency multiplication of claim 1, wherein the fourth annular laser cavity end mirror is a curved mirror, and a coating film of the fourth annular laser cavity end mirror can be highly reflected to the praseodymium-doped visible light laser and is highly transparent to the ultraviolet laser, and is used as an output mirror of the ultraviolet laser.
6. The ultraviolet single-frequency laser device based on frequency doubling in praseodymium-doped annular cavity of claim 1, further comprising: a second blue semiconductor laser, a second focusing lens;
the incident light path of the second blue light semiconductor laser is sequentially provided with the second focusing lens, a second annular laser cavity end mirror, praseodymium-doped laser material and a first annular laser cavity end mirror;
the first semiconductor laser and the second semiconductor laser emit pump light simultaneously, and after being focused by the first focusing lens and the second focusing lens, the pump light is transmitted by the first annular laser cavity end mirror and the second annular laser cavity end mirror respectively and is incident into the praseodymium-doped laser material, the praseodymium-doped laser material absorbs and converts the pump light into praseodymium-doped visible light laser, and then the praseodymium-doped visible light laser is transmitted in a unidirectional mode along a light path in a first annular laser cavity light path respectively, and in the process, the frequency multiplication crystal is used for doubling the frequency and then the ultraviolet single-frequency laser is output from the fourth annular laser cavity end mirror.
7. The ultraviolet single-frequency laser device based on praseodymium-doped annular cavity inner frequency multiplication of claim 1, wherein the fourth annular laser cavity end mirror can be a plane mirror, and a coating film of the ultraviolet single-frequency laser device can be highly reflected to the praseodymium-doped visible light laser and is highly transparent to the ultraviolet laser as an output mirror of the ultraviolet laser.
8. The ultraviolet single-frequency laser device based on praseodymium-doped annular cavity inner frequency multiplication of claim 1 or 7, wherein the first blue light semiconductor laser emits pumping laser to be incident into the praseodymium-doped laser material through the first focusing lens and the first annular laser cavity end surface mirror, the praseodymium-doped laser material absorbs and converts the pumping light into praseodymium-doped visible light laser, and then the praseodymium-doped visible light laser is unidirectionally transmitted along a light path in a second annular laser cavity formed by the first annular laser cavity end surface mirror, the second annular laser cavity end surface mirror, the third annular laser cavity end surface mirror and the fourth annular laser cavity end surface mirror, the ultraviolet single-frequency laser is output from the fourth annular laser cavity end surface mirror after being multiplied by the frequency multiplication crystal in the process, and reverse light rotates after passing through the optical rotatory plate and the half-wave plate in the process, so that loss is increased and vibration cannot be generated.
9. The ultraviolet single-frequency laser device based on praseodymium-doped annular cavity inner frequency multiplication of any one of claims 1 to 7, wherein the first blue semiconductor laser and the second blue semiconductor laser emit pump light simultaneously, respectively after being focused by the first focusing lens and the second focusing lens, respectively transmit the pump light to the praseodymium-doped laser material through the first annular laser cavity end mirror and the second annular laser cavity end mirror, and the praseodymium-doped laser material absorbs and converts the pump light into praseodymium-doped visible light laser light, and then respectively transmits the praseodymium-doped visible light laser light in the second annular laser cavity in a unidirectional manner along an optical path, and outputs the ultraviolet single-frequency laser from the fourth annular laser cavity end mirror after being multiplied by the frequency multiplication crystal in the process.
10. The ultraviolet single-frequency laser device based on frequency multiplication in praseodymium-doped annular cavity as set forth in claim 1, wherein said optical rotator is TGG crystal with magnetic field applied, and said praseodymium-doped laser material is Pr: liYF 4 And (5) a crystal.
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