CN116192055A - Up-down converter based on thick film and implementation method thereof - Google Patents

Up-down converter based on thick film and implementation method thereof Download PDF

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Publication number
CN116192055A
CN116192055A CN202211401313.9A CN202211401313A CN116192055A CN 116192055 A CN116192055 A CN 116192055A CN 202211401313 A CN202211401313 A CN 202211401313A CN 116192055 A CN116192055 A CN 116192055A
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layer
pass filter
band
amplifier
thick film
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杨中华
唐涛
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Sichuan SIP Electronic Technology Co Ltd
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Sichuan SIP Electronic Technology Co Ltd
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Priority to CN202211401313.9A priority Critical patent/CN116192055A/en
Publication of CN116192055A publication Critical patent/CN116192055A/en
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/16—Multiple-frequency-changing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486—Via connections through the substrate with or without pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49883—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing organic materials or pastes, e.g. for thick films
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Transceivers (AREA)

Abstract

The up-down converter based on thick film and its implementation method, the converter includes crystal oscillator, combiner, local oscillator band-pass filter that connect sequentially, drive amplifier, intermediate frequency band-pass filter of intermediate frequency signal input that connect sequentially, mixer, low noise amplifier, power amplifier that connect sequentially, local oscillator band-pass filter and intermediate frequency band-pass filter connect at two input ends of the mixer, the combiner connects the singlechip; the frequency converter is arranged in the multilayer thick film circuit, and a ceramic substrate is arranged between two adjacent layers; the mixer, the crystal oscillator, the combiner and the singlechip are arranged on the topmost layer; the intermediate frequency band-pass filter, the radio frequency output band-pass filter and the local oscillator band-pass filter are arranged on a middle layer; the driving amplifier, the low noise amplifier and the power amplifier are arranged on the bottom layer. The two-dimensional structure of the separated cavity is changed into a thick film three-dimensional multi-layer structure, so that the size and the weight are reduced, better electromagnetic compatibility and heat dissipation are provided, the transmission line is shorter, the signal transmission is faster, and the efficiency is higher.

Description

Up-down converter based on thick film and implementation method thereof
Technical Field
The application relates to frequency converters, in particular to an up-down converter based on thick films and an implementation method thereof.
Background
In millimeter wave communication, a frequency conversion component/frequency converter is an important component in a wireless communication system, and the component integrates functional circuits such as a mixing circuit and an amplifying circuit into the same module, so that the link performance index of the component is closely related to the whole system. Therefore, the up-down conversion component is an important component in the microwave integrated circuit transceiver system.
In order to realize good electromagnetic compatibility and ensure normal operation of the system, the conventional technology generally adopts a split-cavity design to supply power to a single cavity, and frequency up/down-converts the power to the single cavity and the local oscillator source to the single cavity. The power supply circuit is connected by jumper wires through the through holes between the cavities. The design is larger in size, the weight of the system is increased due to the fact that the metal partition walls are adopted for the cavity separation, the cavities are longer than each other by Kong Tiaoxian, and the problems of low signal transmission speed, untimely response and the like are caused.
Disclosure of Invention
In order to solve the defects of the prior art, the application provides the up-down converter based on the thick film and the implementation method thereof, the traditional two-dimensional structure of the separated cavity is changed into a three-dimensional integrated multi-layer structure of the thick film, the whole size and the weight are reduced, better electromagnetic compatibility and good heat dissipation can be provided, the transmission line between devices is shorter, the signal transmission is faster, and the efficiency is higher.
In order to achieve the above object, the present invention adopts the following technique:
the up-down converter based on thick film comprises a crystal oscillator, a combiner and a local oscillator band-pass filter which are sequentially connected, a driving amplifier and an intermediate frequency band-pass filter which are sequentially connected with intermediate frequency signal input, and a mixer, a low noise amplifier and a power amplifier which are sequentially connected with each other, wherein the local oscillator band-pass filter and the intermediate frequency band-pass filter are respectively connected with two input ends of the mixer, and the combiner is connected with a singlechip;
the frequency converter is arranged in the multilayer thick film circuit, and a ceramic substrate is arranged between two adjacent layers;
the mixer, the crystal oscillator, the combiner and the singlechip are arranged on the topmost layer; the intermediate frequency band-pass filter, the radio frequency output band-pass filter and the local oscillator band-pass filter are arranged on a middle layer; the driving amplifier, the low noise amplifier and the power amplifier are arranged on the bottom layer.
The frequency converter further comprises an LDO and a plurality of power supply matching circuits connected with the LDO, the driving amplifier, the low noise amplifier and the power amplifier are respectively connected with different power supply matching circuits, the LDO is arranged on the bottommost layer, and the power supply matching circuits are arranged on the other layer in the middle.
The output end of the singlechip is connected with the combiner through a low-frequency signal control line, and the low-frequency signal control line is independently distributed on the middle layer.
Each radio frequency signal transmission line in the frequency converter is arranged at the topmost layer or the lowest layer, or is respectively arranged at the topmost layer and the lowest layer.
The implementation method of the up-down converter based on the thick film comprises the following steps:
providing a plurality of ceramic substrates, and processing the top surface of each ceramic substrate to form a layer of thick film circuit; a layer of thick film circuit is also processed and formed on the bottom surface of one ceramic substrate, and the substrate is a bottom substrate;
a driving amplifier, a low noise amplifier and a power amplifier are arranged on a bottom thick film circuit of a bottom substrate;
setting a mixer, a crystal oscillator, a combiner and a singlechip on a thick film circuit of another ceramic substrate, and taking the substrate as a top substrate;
an intermediate frequency band-pass filter, a radio frequency output band-pass filter and a local oscillator band-pass filter are arranged on a thick film circuit of the ceramic substrate;
and taking the top substrate as the uppermost layer, taking the bottom substrate as the lowermost layer, and superposing all the ceramic substrates between the top substrate and the bottom substrate by the rest substrates, and sintering and forming.
The invention has the beneficial effects that:
1. the three-dimensional integrated multi-layer circuit structure of the up-down converter is realized, the overall size and weight are reduced, the number of wiring layers is large, and the design wiring can be more flexible;
2. the link device and the power device are arranged on the top surface and the bottom surface separately, so that the stray signals can be shielded, the independent strata are configured on different hardware, the devices are connected with the corresponding strata through the metallized via holes, a similar cavity isolation state is formed, the stray signals can be shielded, and the overall electromagnetic compatibility is better;
3. the singlechip control line and the power supply line of the power supply are respectively arranged on different layers in the middle, and related electricity is conducted through the metallized via holes, so that the transmission line is shorter, the signal transmission speed is faster, and the efficiency is higher;
4. the metal separation cavity is not required to be arranged, the weight of the whole device is reduced, the assembly density of the multilayer circuit board is high, and the volume is small;
5. the periphery of the power amplifier is provided with heat dissipation through holes, and the heat dissipation through holes are connected to the built-in metal heat dissipation layer through metal vias, so that rapid heat dissipation is realized; the driving amplification grounding layer and the heat dissipation layer, the low-noise amplification and power amplification grounding layer and the heat dissipation layer are arranged on different layers, so that heat conduction is more effectively carried out, and the heat dissipation device is more concentrated and is beneficial to improving heat dissipation performance.
Drawings
Fig. 1 is a circuit configuration diagram of an up-down converter according to an embodiment of the present application.
Fig. 2 is an exploded view of the overall structure of the up-down converter according to an embodiment of the present application.
Fig. 3 is an exploded view of layers 1 to 6 of the up-down converter of the embodiment of the present application.
Fig. 4 is an exploded view of layers 7 to 13 of the up-down converter of the embodiment of the present application.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the following detailed description of the embodiments of the present invention will be given with reference to the accompanying drawings, but the described embodiments of the present invention are some, but not all embodiments of the present invention.
The embodiment of the application discloses an up-down converter based on thick film, which is arranged in a multi-layer thick film circuit structure.
The frequency converter hardware circuit in this example, as shown in fig. 1, includes a driving amplifier 38, an intermediate frequency band-pass filter 35, a mixer 31, a low noise amplifier 39, a power amplifier 310, a crystal oscillator 32, a combiner 33, a local oscillator band-pass filter 37, a singlechip 34, and an LDO 311.
One input terminal of the drive amplifier 38, the intermediate frequency band-pass filter 35, and the mixer 31 are sequentially connected through a radio frequency signal transmission line.
The crystal oscillator 32, the combiner 33, the local oscillator band-pass filter 37 and the other input end of the mixer 31 are sequentially connected through a radio frequency signal transmission line. The singlechip 34 is connected with the combiner 33 through a low-frequency signal control line and is used for controlling the combiner 33 through outputting a control signal.
The output end of the mixer 31, the low noise amplifier 39 and the power amplifier 310 are sequentially connected through a radio frequency signal transmission line.
The power supply voltage introduced by the LDO 311 is converted by different power supply matching circuits and then supplied to each amplifier by different power supply lines.
As shown in fig. 2 to 4, in an example of this embodiment, the devices of the frequency converter are laid out by using a 13-layer post-film circuit structure, in this example, the frequency converter includes a 1 st layer 11, a 2 nd layer 12, a 3 rd layer 13, a 4 th layer 14, a 5 th layer 15, a 6 th layer 16, a 7 th layer 17, an 8 th layer 18, a 9 th layer 19, a 10 th layer 110, an 11 th layer 111, a 12 th layer 112, and a 13 th layer 113 from top to bottom, and the total 13 layers of the film circuit are separated by a ceramic substrate 2.
The mixer 31, the crystal oscillator 32, the combiner 33, the singlechip 34 and part of the radio frequency signal transmission line 4 are arranged on the layer 111. An intermediate frequency band pass filter 35, a radio frequency output band pass filter 36, and a local oscillator band pass filter 37 are arranged on the 6 th layer 16. The low frequency signal control line 5 is laid out on the 7 th layer 17. Each power matching circuit 6 and corresponding power line 7 are laid out on layer 8 18. Different power supply lines 7 are connected to different power supply matching circuits 6. Driver amplifier 38, low noise amplifier 39, power amplifier 310, LDO 311 are laid out on layer 13.
The output end of the singlechip 34 is connected to one end of a low-frequency signal control line 5 arranged on the 7 th layer 17 through a pass-through hole, and the other end of the low-frequency signal control line 5 is connected to the combiner 33 through the pass-through hole.
LDO 311 is connected to each power supply matching circuit 6 through a via hole, and driver amplifier 38, low noise amplifier 39, and power amplifier 310 are connected to different power supply lines 7 through via holes.
Layer 2, layer 3, layer 13, layer 4, layer 14, layer 5, and layer 15 are metal layers. The grounding of the mixer 31 is conducted to the layer 2 12 through a grounding via hole, and the grounding of the intermediate frequency band-pass filter 35, the radio frequency output band-pass filter 36 and the local oscillator band-pass filter 37 is conducted to the layer 2 12 through a grounding via hole, so that an electromagnetic shielding cavity effect is formed; the grounding of the crystal oscillator 32, the combiner 33 and the single chip microcomputer 34 is conducted to different layers of the 3 rd layer 13, the 4 th layer 14 and the 5 th layer 15 through grounding through holes respectively, specifically in the example shown in fig. 2-3, the grounding of the crystal oscillator 32 is conducted to the 3 rd layer 13 through the grounding through holes, the grounding of the combiner 33 is conducted to the 4 th layer 14 through the grounding through holes, the grounding of the single chip microcomputer 34 is conducted to the 5 th layer 15 through the grounding through holes, and the periphery of each device is connected to the corresponding metal layer through the through holes, so that an electromagnetic shielding cavity effect is formed.
The 12 th layer 112 and the 10 th layer 110 are metal layers, the 11 th layer 111 and the 9 th layer 19 are heat dissipation layers, heat dissipation through holes are uniformly distributed on the periphery sides of the driving amplifier 38, the low noise amplifier 39 and the power amplifier 310, the ground of the driving amplifier 38 is conducted to the 10 th layer 110 through the ground through holes and is further conducted to the 9 th layer 19, and the ground of the low noise amplifier 39 and the power amplifier 310 is conducted to the 12 th layer 112 through the ground through holes and is further conducted to the 11 th layer 111.
The metal layer and the periphery of the heat dissipation layer are connected with the metal shell in a multipoint connection mode, so that good heat dissipation and grounding are realized.
The thick film-based multilayer structure is adopted in the embodiment, so that the number of wiring layers is large, the design wiring can be more flexible, and the multilayer wiring avoids bridging, crossing and the like of connecting wires; different hardware modules of the frequency converter are all provided with independent ground layers, in addition, devices are connected with corresponding layers through metallized through holes, a similar cavity isolation state is formed, stray signals are shielded, and the overall electromagnetic compatibility is better.
Meanwhile, heat dissipation through holes are arranged around the power amplifier device and are connected to the built-in metal heat dissipation layer through metal through holes, so that rapid heat dissipation is realized; the devices are connected through the through holes to replace jumper wires between the metal partition walls, the transmission distance is shorter, the signal transmission speed is faster, and the efficiency is higher.
The implementation method of the up-down converter based on the thick film in the embodiment comprises the following steps:
s1, providing 12 ceramic substrates 2, wherein the top surfaces of the first 11 ceramic substrates 2 are processed to form a layer of thick film circuit, namely a 1 st layer 11, a 2 nd layer 12, a 3 rd layer 13, a 4 th layer 14, a 5 th layer 15, a 6 th layer 16, a 7 th layer 17, an 8 th layer 18, a 9 th layer 19, a 10 th layer 110, an 11 th layer 111 and a 12 th layer 112 in sequence; a thick film circuit is also formed on the bottom surface of the 12 th ceramic substrate 2 as the 13 th layer 113, and the 12 th ceramic substrate 2 is a base substrate.
S2, processing a through via hole, a grounding via hole and a heat dissipation through hole on the corresponding ceramic substrate 2 according to the design requirement and the connection relation requirement.
S3, arranging a mixer 31, a crystal oscillator 32, a combiner 33, a singlechip 34 and part of radio frequency signal transmission lines 4 on the layer 1 11; an intermediate frequency band-pass filter 35, a radio frequency output band-pass filter 36 and a local oscillator band-pass filter 37 are arranged on the 6 th layer 16; laying out the low frequency signal control line 5 on the 7 th layer 17; each power supply matching circuit 6 and the corresponding power supply line 7 are arranged on the 8 th layer 18, so that different power supply lines 7 are connected with different power supply matching circuits 6; the driving amplifier 38, the low noise amplifier 39, the power amplifier 310, and the LDO 311 are arranged on the 13 th layer, and the heat dissipation through hole is located at the periphery of the power amplifier 310.
S4, stacking all the ceramic substrates 2, aligning corresponding through holes, grounding through holes and heat dissipation through holes, and sintering and forming, so that the output end of the singlechip 34 is connected to one end of a low-frequency signal control line 5 distributed on the 7 th layer 17 through the through holes, and the other end of the low-frequency signal control line 5 is connected to the combiner 33 through the through holes; the LDO 311 is connected with each power matching circuit 6 through a pass-through hole, and the driving amplifier 38, the low noise amplifier 39 and the power amplifier 310 are respectively connected with different power lines 7 through the pass-through holes; and the ground of the mixer 31 is conducted to the layer 2 12 through the ground via; the grounding of the intermediate frequency band-pass filter 35, the radio frequency output band-pass filter 36 and the local oscillator band-pass filter 37 is conducted to the layer 2 12 through the grounding via hole, so that an electromagnetic shielding cavity effect is formed; the grounding of the crystal oscillator 32, the combiner 33 and the singlechip 34 is respectively conducted to different layers of the 3 rd layer 13, the 4 th layer 14 and the 5 th layer 15 through the grounding via holes; and the ground of the driver amplifier 38 is conducted to the 10 th layer 110 and the 9 th layer 19 through the ground via hole, and the ground of the low noise amplifier 39 and the power amplifier 310 is conducted to the 12 th layer 112 and the 11 th layer 111 through the ground via hole.
The foregoing is merely a preferred embodiment of the present application and is not intended to limit the present application, and it will be apparent to those skilled in the art that various modifications and variations can be made in the present application without departing from the spirit and scope of the present application.

Claims (10)

1. The up-down converter based on thick films comprises a crystal oscillator (32), a combiner (33) and a local oscillator band-pass filter (37) which are sequentially connected, a driving amplifier (38) and an intermediate frequency band-pass filter (35) which are sequentially connected with intermediate frequency signal input, a mixer (31), a low noise amplifier (39) and a power amplifier (310) which are sequentially connected, wherein the local oscillator band-pass filter (37) and the intermediate frequency band-pass filter (35) are respectively connected with two input ends of the mixer (31), and the combiner (33) is connected with a singlechip (34);
the frequency converter is characterized in that the frequency converter is arranged in a multilayer thick film circuit, and a ceramic substrate (2) is arranged between two adjacent layers;
the mixer (31), the crystal oscillator (32), the combiner (33) and the singlechip (34) are arranged on the topmost layer; the intermediate frequency band-pass filter (35), the radio frequency output band-pass filter (36) and the local oscillator band-pass filter (37) are arranged on a middle layer; the driving amplifier (38), the low noise amplifier (39) and the power amplifier (310) are arranged on the bottom layer.
2. The thick film based up-down converter of claim 1, further comprising an LDO (311) and a plurality of power matching circuits (6) connected to the LDO (311), wherein the driver amplifier (38), the low noise amplifier (39), and the power amplifier (310) are each connected to a different power matching circuit (6), the LDO (311) is disposed on a bottom layer, and the power matching circuits (6) are disposed on another layer in between.
3. The thick film based up-down converter of claim 2, wherein the output of the single chip microcomputer (34) is connected to the junction circuit (33) via a low frequency signal control line (5), the low frequency signal control line (5) being laid out separately on a further layer in between.
4. Thick film based up-down converter according to claim 1, characterized in that the individual radio frequency signal transmission lines (4) in the converter are laid out at the topmost or bottommost level, or at the topmost and bottommost level, respectively.
5. The thick film based up-down converter of claim 2, wherein the converter is laid out in a 13 layer thick film circuit, top down:
the mixer (31), the crystal oscillator (32), the combiner (33) and the singlechip (34) are arranged on the 1 st layer (11);
the intermediate frequency band-pass filter (35), the radio frequency output band-pass filter (36) and the local oscillator band-pass filter (37) are arranged on the 6 th layer (16);
the output end of the singlechip (34) is connected with the joint circuit (33) through a low-frequency signal control line (5) distributed on the 7 th layer (17);
each power supply matching circuit (6) is arranged on the 8 th layer (18);
LDO (311), driver amplifier (38), low noise amplifier (39), and power amplifier (310) are arranged on layer 13 (113).
6. The up-down converter based on thick film according to claim 1, wherein the 8 th layer (18) is further provided with a plurality of power lines (7) corresponding to different power matching circuits (6), the LDO (311) is connected to each power matching circuit (6) through a via hole, and the driving amplifier (38), the low noise amplifier (39) and the power amplifier (310) are connected to different power lines (7) through via holes.
7. The thick film based up-down converter of claim 6, wherein the output of the single chip microcomputer (34) is connected to one end of a low frequency signal control line (5) laid out on layer 7 (17) through a via hole, and the other end of the low frequency signal control line (5) is connected to a combiner (33) through the via hole.
8. The thick film-based up-down converter of claim 6, wherein the 2 nd layer (12), the 3 rd layer (13), the 4 th layer (14), and the 5 th layer (15) are metal layers, the ground of the mixer (31) is conducted to the 2 nd layer (12) through a ground via hole, the ground of the intermediate frequency band-pass filter (35), the radio frequency output band-pass filter (36), and the local oscillator band-pass filter (37) is conducted to the 2 nd layer (12) through a ground via hole, and the ground of the crystal oscillator (32), the combiner (33), and the singlechip (34) is conducted to different layers of the 3 rd layer (13), the 4 th layer (14), and the 5 th layer (15) through ground via holes, respectively.
9. The thick film based up-down converter of claim 6, wherein layer 12 (112), layer 10 (110) are metal layers, layer 11 (111), layer 9 (19) are heat dissipation layers, the periphery of the driver amplifier (38), the low noise amplifier (39), and the power amplifier (310) are uniformly provided with heat dissipation through holes, the ground of the driver amplifier (38) is conducted to layer 10 (110) through the ground through holes and further conducted to layer 9 (19), the ground of the low noise amplifier (39), and the power amplifier (310) is conducted to layer 12 (112) through the ground through holes and further conducted to layer 11 (111).
10. The implementation method of the up-down converter based on thick films, the said frequency converter includes the crystal oscillator (32), combiner (33), local oscillator band-pass filter (37) that connects sequentially, and drive amplifier (38), intermediate frequency band-pass filter (35) of intermediate frequency signal input that connects sequentially, and mixer (31), low noise amplifier (39), power amplifier (310) that connects sequentially, local oscillator band-pass filter (37) and intermediate frequency band-pass filter (35) connect respectively at two input ends of mixer (31), the combiner (33) connects the singlechip (34), characterized in that, the said implementation method includes the step:
providing a plurality of ceramic substrates (2), wherein the top surface of each ceramic substrate (2) is processed to form a thick film circuit; the bottom surface of one ceramic substrate (2) is also processed to form a thick film circuit, and the substrate is a bottom substrate;
a driver amplifier (38), a low noise amplifier (39), and a power amplifier (310) are provided on a thick-film circuit on a substrate;
a mixer (31), a crystal oscillator (32), a combiner (33) and a singlechip (34) are arranged on a thick film circuit of the other ceramic substrate (2), and the substrate is taken as a top substrate;
an intermediate frequency band-pass filter (35), a radio frequency output band-pass filter (36) and a local oscillation band-pass filter (37) are arranged on a thick film circuit of the other ceramic substrate (2);
and taking the top substrate as the uppermost layer, taking the bottom substrate as the lowermost layer, positioning other substrates between the top substrate and the bottom substrate, overlapping all the ceramic substrates (2), and sintering and forming.
CN202211401313.9A 2022-11-09 2022-11-09 Up-down converter based on thick film and implementation method thereof Pending CN116192055A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211401313.9A CN116192055A (en) 2022-11-09 2022-11-09 Up-down converter based on thick film and implementation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211401313.9A CN116192055A (en) 2022-11-09 2022-11-09 Up-down converter based on thick film and implementation method thereof

Publications (1)

Publication Number Publication Date
CN116192055A true CN116192055A (en) 2023-05-30

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CN202211401313.9A Pending CN116192055A (en) 2022-11-09 2022-11-09 Up-down converter based on thick film and implementation method thereof

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