JP2003309483A - High frequency module, active phased array antenna and communication equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To realize a small and low-cost high frequency module, which is used for a communication system using a microwave such as mobile satellite communication. <P>SOLUTION: A multilayer package 17 comprising a box-shaped cavity 17a wherein one face forms an opening part and a lid 17a covering the opening part, wherein the lid composed of multilayer substrates layered in the direction of its thickness, and in the cavity, the bottom part and four side walls are composed of multilayer substrates whose laying direction is the same as that of the lid is provided. An element antenna 31 is formed on the surface of the lid 17b of the multilayer package, and low noise amplifiers 2 and 9 are mounted on the rear face of the lid 17b. A 90° hybrid circuit 4 and low-pass filters 3 and 10 as well as low noise amplifiers 5 and 11 and phase shifters 6 and 17 are mounted in the cavity 17a. A ball grid array 21 for connection with a mother substrate 22 is provided on the bottom face of the cavity 17a. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency module used in a microwave communication system such as mobile satellite communication, and more particularly to a semiconductor integrated circuit in a package including a cavity and a lid and formed of a multilayer substrate. The present invention relates to a high-frequency module whose size and cost are reduced by arranging passive circuits in three dimensions. The present invention also relates to an active phased array antenna using such a high frequency module. It also relates to a communication device using such an active phased array antenna.

[0002]

2. Description of the Related Art FIG. 9 shows, for example, US Patent.
The conventional high frequency wave described in 6,020,848 (hereinafter,
It is a block diagram which shows the structural example of a module (abbreviated as RF). In the figure, 1 is a first input terminal, 2 is a first low noise amplifier (LNA), 3 is a first low-pass filter, 4 is a 90 ° hybrid circuit, and 5 is a second low noise amplifier (LNA).
NA), 6 is a first phase shifter, 7 is a first output terminal, 8 is a second input terminal, 9 is a third low noise amplifier (LNA),
Reference numeral 10 is a second low-pass filter, 11 is a fourth low noise amplifier (LNA), 12 is a second phase shifter, 13 is a second output terminal, and 14 is a package for mounting these elements. As input / output terminals, a feed-through type microstrip line shown in FIG. 10 to be described later and a configuration in which a coaxial connector is attached to a package are generally used. The first, second, third and fourth low noise amplifiers 2, 5, 9, 11 and the first and second phase shifters 6, 12 are monolithic microwave integrated circuits (hereinafter referred to as MMICs). ) Consists of US Pat
As described in nt 6,020,848,
Usually, a GaAs compound semiconductor is used. A Lange coupler or the like is used as the 90 ° hybrid circuit 4.

Next, the operation will be described. FIG. 10 shows a system diagram of an RF module having such a conventional configuration. In the figure, the same or corresponding parts as those shown in FIG. 9 are designated by the same reference numerals, and the description thereof will be omitted. In the figure, 15 is a phase shifter controller composed of an LSI, and 16 is a control signal input terminal. In the RF module shown in FIG. 10, the received signal is the element antenna 31 connected to the input terminals 1 and 8 of each module.
After being received by, it is input from each input terminal, amplified by the low noise amplifiers 2 and 9, the polarization is converted by the 90 ° hybrid 4, and unnecessary waves are removed by the low pass filters 3 and 10. Phase shifter 6,
After controlling the passing phase for forming the reception beam with a desired polarization angle by 12, the signal is output from the output terminals 7 and 13.

[0004]

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention
In the F module, each device, that is, MMIC, is manufactured as an individual chip so that it can be tested as a single unit, and is mounted in a package for use. Therefore, the layout of each device in the module is inevitably configured such that individual chips are arranged in a line in the package 14 as shown in FIG. Therefore, in the RF module having such a conventional configuration, there are problems that the outer dimensions are large, the number of chips is large, and the assembling cost is high. Further, when the coaxial connector is used as the input / output RF interface, the cost for assembly such as brazing of the mounting portion of the package and the coaxial connector is high and the test is easy, but the cost and the size are large. there were.

The present invention has been made to solve the above problems, and is composed of a box-shaped cavity having an opening formed on one surface thereof and a lid for covering the opening. The multilayer cavity is composed of multi-layer boards laminated in the same direction, and the cavity also has a bottom portion and four side walls provided with a multi-layer package in which the stacking direction is the same direction as the lid, and the element antenna is formed on the surface of the lid of this multi-layer package. In addition, the multi-layer substrate that constitutes the cavity and lid of the multi-layer package can be miniaturized by mounting a high-frequency circuit that is composed of semiconductor integrated circuits and passive circuits and that transmits high-frequency signals to the element antenna or receives high-frequency signals from the element antenna. The purpose is to obtain a high-frequency module that can be realized at low cost. Another object of the present invention is to obtain a small-sized, low-cost active phased array antenna configured by using such a high frequency module. Further, it is an object of the present invention to obtain a small-sized and low-cost communication device configured by using such an active phased array antenna.

[0006]

A high-frequency module according to the present invention has a box-shaped cavity having an opening formed on one surface and a lid for covering the opening. The lid is a multi-layer laminated in the thickness direction thereof. It is composed of a substrate, and the cavity is composed of a multilayer package in which the bottom and side walls are laminated in the same direction as the lid, an element antenna provided on the surface of the lid, and a cavity and a lid of the multilayer package. A high-frequency circuit configured by a semiconductor integrated circuit and a passive circuit mounted on a multilayer substrate to transmit a high-frequency signal to an element antenna or receive a high-frequency signal from the element antenna,
Outputting high-frequency signals to the high-frequency circuit, and connection terminals, which are provided at opposing positions on the contact surfaces of the side wall upper surface of the cavity and the side wall upper surface of the lid, for connecting the wiring on the cavity side and the wiring on the lid side, respectively. A mother board that inputs a high-frequency signal from the circuit and distributes and combines the high-frequency signal, a control signal of the high-frequency circuit, and a signal including a power supply, and a connecting component provided in the multilayer package for connecting the multilayer package Be prepared.

The high frequency circuit includes a high output amplifier and a phase shifter composed of a monolithic microwave integrated circuit, a controller for a phase shifter composed of a large scale integrated circuit, a 90 ° hybrid circuit of a passive circuit and a low pass fill. , Mounted in a cavity. Further, the high-frequency circuit has a low noise amplifier composed of a monolithic microwave integrated circuit mounted on a lid, a low noise amplifier and a phase shifter composed of a monolithic microwave integrated circuit, and a transfer circuit composed of a large-scale integrated circuit. A phaser controller, a 90 ° hybrid circuit of a passive circuit, and a low-pass filter are mounted in a cavity. Further, a low noise amplifier having a noise figure smaller than that of the low noise amplifier mounted in the cavity is mounted on the lid.

Further, the element antenna is connected to the input terminal of the high frequency circuit by a non-contact connecting device. Furthermore, the non-contact connection device is configured by electromagnetically coupling the microstrip line and the slot line. Further, the connecting component is composed of a ball grid array in which conductor balls or bumps are arranged in a grid pattern, and is provided on the outer surface of the bottom of the cavity. Further, the multilayer package is formed such that one end is in contact with the heat generating portion of the semiconductor integrated circuit mounted in the cavity and the other end is in contact with the plurality of heat dissipation via holes extending to the outer surface of the bottom of the cavity. The heat dissipation device is composed of the electrode pad and one ball in the ball grid array that is in contact with the electrode pad.

The multi-layer package is composed of a central via hole formed inside the sidewall of the cavity and serving as a central conductor, outer via holes formed on both sides of the central via hole, and side surface metallization formed on both sides of the sidewall, and is grounded. It is provided with a pseudo coaxial mode high frequency transmission line composed of an outer conductor at a potential. further,
In the multi-layer package, the anisotropic conductive film is inserted between the upper surface of the side wall of the cavity and the lid, and the anisotropic conductive film is pressed to connect the connection terminals. Furthermore, the active phased array antenna according to the present invention is configured using the high frequency module as described above. Further, the communication device according to the present invention,
It is configured using the active phased array antenna as described above.

[0010]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiment 1. First Embodiment FIG. 1 is an explanatory view for explaining a first embodiment of the present invention, and is a view shown in a sectional view. In FIG. 1, parts that are the same as or correspond to those in FIGS. 9 and 10 are given the same reference numerals, and descriptions thereof will be omitted.
Reference numeral 17 denotes a multi-layer package, which comprises a box-shaped cavity 17a having an opening formed on one surface and a lid 17b covering the opening. The lid 17b is composed of a multi-layer substrate laminated in the thickness direction thereof. The bottom portion and the four side walls are formed of a multilayer substrate whose stacking direction is the same as that of the lid 17b. In addition, the cavity 17a is an input / output RF of the MMIC.
Built-in signal transmission line and bias wiring, lid 17b
Similarly to the cavity 17a, the RF transmission line and the bias wiring are also incorporated. 19 is a dielectric of the element antenna, 20
Is a non-excitation patch of the element antenna, and the dielectric element 19 and the non-excitation patch 20 constitute a dielectric element antenna 31. The non-excitation patch 20 here uses a ring-shaped conductor plate provided with two ports, a port to which the terminal 1 is connected and a port to which the terminal 8 is connected. In FIG. 1, 32 in the mother substrate 22 is a bias / control wiring, 33 is an RF signal wiring, and 34 is a GND layer. Only one of the plurality of bias / control wirings 32 and RF signal wiring 33 is shown.

Reference numeral 21 is a ball grid array (hereinafter, BG
A)), the conductor balls or bumps are arranged in a grid pattern. This BGA is a multi-layer package 1
7 is arranged between the mother board 22 and the mother board 22 to electrically connect RF signals and DC wiring, GND, and the like, and also makes thermal connection via the thermal VIA 26. The mother board 2
Reference numeral 2 is a substrate for transmitting and receiving high-frequency signals to and from the high-frequency circuit forming the module, and for distributing and synthesizing high-frequency signals, control signals for the high-frequency circuits, and signals including power supplies. Further, the thermal VIA 26 is a via hole for heat dissipation, and is only larger than the via hole for connection.
As the material of the multilayer package 17, generally, high temperature firing ceramics (HTCC) or low temperature firing ceramics (LTC).
C) is used to realize multilayer wiring. Also, as the dielectric material of the element antenna, the above-mentioned HTCC, LTCC
In addition to the above, liquid crystal polymer (LCP) or the like is used.
As the wiring material for the inner layer such as HTCC and LTCC, A
g, Cu paste is used, and it is possible to realize a transmission line with sufficiently low loss even in RF transmission. Also, B
A solder ball, a gold bump, a resin ball, or the like can be used as the conductor ball forming the GA.

In the RF module according to the first embodiment,
An RF signal is transmitted from the element antenna 31 including the parasitic patch 20 and the dielectric 19 to the inside of the module through the input terminals 1 and 8. The RF signal fed to the inside of the module is input to the low noise amplifiers 2 and 9 provided on the back surface of the package lid 17b, and after low noise amplification, input to the transmission line of the package side wall through the transmission line on the package lid. To be done. After passing through the transmission line on the side wall of the package, filter circuits 3 and 10 for removing unwanted waves are further provided in the inner layer of the cavity 17a.
It is input to the low noise amplifiers 5 and 11 via the 90 ° hybrid circuit 4 for polarization conversion. After being amplified by the amplifier, it is further input to the phase shifters 6 and 12 and given a desired amount of phase shift, and then, via the ball grid array 21,
The received signal is transmitted to the mother board 22. Low noise amplifier 5,
11 is generally high in output and consumes a large amount of power as compared with the first-stage low noise amplifiers 2 and 9, so that the heat dissipation is thermal VI.
Heat is released by transferring heat to the BGA via A26.

The low noise amplifiers 2 and 9 use amplifiers having a noise index smaller than that of the low noise amplifiers 5 and 11 to improve the noise figure at the input end of the RF module. In this specification, the RF module means the dielectric element antenna 31, the multilayer package 1
7. High frequency circuit mounted on the multilayer package 17 and B
The one including the GA 21 is called an RF module. In other words, R in FIG.
It is called F module.

2A and 2B are explanatory views for explaining a heat dissipation device for performing heat dissipation from such an RF module by thermal VIA. FIG. 2A is a view of the arrangement state of thermal VIAs as seen from above, and FIG. 2B is a cavity. It is the figure which looked at a part of from the side. In FIG. 2, the parts designated by the same reference numerals as those in FIG. 1 indicate the same parts, and 35 indicates an electrode pad which is an area to which a solder ball is connected, which is formed on the outer surface of the bottom portion of the cavity 17a and is connected to one side of the thermal VIA. Is in contact with the end face of. The other end surface of the thermal VIA is the MMIC.
It is in contact with the heat generating parts 5 and 11. Here, in order to increase the heat radiation amount per ball that constitutes the BGA,
Thermal VIA26 in the package for one ball
4 is used. As a result, the thermal V
In addition to improving the heat dissipation efficiency of the IA, even if some of the thermal VIAs are disconnected, it is possible to continue using the module without significantly degrading the heat dissipation that may damage the semiconductor chip. It will be possible.
Note that FIG. 2 uses two sets of four thermal VIA 26. In FIG. 1, the thermal VIA 261 is used.
One ball is connected to each ball, and the heat radiation effect can be obtained even with this, but the configuration as shown in FIG. 2 has many advantages as described above.

FIG. 3 is an explanatory view for explaining the structure of the RF transmission line provided on the side wall of the cavity in such an RF module. 3 is a view of the side wall viewed from above in FIG. 1, and illustration of the VIA hole 29 is omitted in FIG. The RF transmission line used here is a quasi-coaxial mode, and the VIA hole 27 serves as the center conductor, and the outer VIA formed on both sides of the side wall metallization 28 on both side walls of the cavity 17a and the via hole 27 serve as the outer conductor. The RF signal is transmitted using the hole 29. In this RF transmission line, the side-surface metallization 28 is arranged so as to sandwich the VIA hole 27, and the VIA hole 29 is also arranged so as to sandwich the VIA hole 27, so that the outer conductor is arranged substantially uniformly around the center conductor. In addition to having good isolation characteristics from the outside, it is possible to realize low-loss transmission characteristics.

An anisotropic conductive film (ACF) is provided so that the central conductor on the upper side wall of the cavity 17a and the transmission line of the package lid 17b can be electrically connected by pressure.
By this, it becomes possible to transmit the RF signal without electrically short-circuiting the portion other than the central conductor, for example, the GND pattern and the central conductor. The ACF is used for the upper surface of the side wall of the cavity 17a and the lid 17.
It is inserted between b. In addition, the transmission line of the package lid 17b has the same shape (circular shape) at a position facing the central conductor.
Since the patterns are formed, the ACF is inserted between the patterns having the same shape, and the patterns are connected by applying pressure. There are 4 RF transmission lines in pseudo-coaxial mode.
Although the case where it is provided on one of the side walls has been described, it may be provided on a plurality of side walls. Further, in the connection by the ACF, the connection pattern of the same shape is similarly provided for the power supply, the control wiring, etc. in addition to the RF transmission line.

Embodiment 2. Second Embodiment FIG. 4 is an explanatory view for explaining the second embodiment of the present invention, and is a view shown in a sectional view. 4, parts that are the same as or correspond to those in FIG. 1 are given the same reference numerals, and descriptions thereof will be omitted. Embodiment 1
In the RF module according to, the non-exciting patch of the element antenna and the microstrip line on the back surface of the package lid are connected to each other.
It was necessary to connect the conductor portion such as the IA hole and the non-excitation patch. In this case, a connection failure portion such as a crack due to thermal stress is likely to occur in the connection portion, and the received signal of the module is normally received in the MMIC inside the package.
There is a problem that transmission to an active element such as a chip becomes impossible.

The second embodiment is intended to solve such a problem, in which the non-exciting patch is connected to the low noise amplifier on the back surface of the package lid by a non-contact connection method by electromagnetic coupling of the slots. FIG. 4 shows the configuration of the RF module according to the second embodiment, and FIG. 5 shows the details of electromagnetic coupling by means of slots. Reference numeral 23 is a microstrip line connected to the input terminals of the low noise amplifiers 2 and 9, 24 is a ground conductor provided in the inner layer of the package lid, and 25 is a slot line provided in a part of the ground conductor 24. The microstrip line 23 and the slot line 25 are electromagnetically coupled to each other to efficiently receive the signal received from the non-excitation patch by the low noise amplifiers 2, 9
The electrical length and the characteristic impedance are determined so that it can be input to According to this structure, since there is no physical connection structure between the non-excitation patch and the microstrip line, disconnection due to a thermal cycle or the like does not occur in principle. Therefore, reliable RF
It becomes possible to realize a module. In FIG. 5, (a) is a side view and (b) is a bottom view of (a). Although two sets of electromagnetic couplings are used for the input terminals 1 and 8, they are omitted in FIG. The dielectric of the element antenna 31 is the lid 1
It is also used as the dielectric of 7b.

As described above, the first and second embodiments
According to the above, a multi-layer lid in which a passive circuit element such as a microwave filter or a 90 ° hybrid is built in the inner layer of a multi-layer package and an element antenna is formed on the surface is used as compared with a conventional RF module. Thus, the three-dimensional arrangement is possible, and it is possible to realize a small and inexpensive RF module. Further, a pseudo coaxial transmission line which is provided inside the side wall of the package and uses the side surface metallization (castellation) 28 and the VIA hole 29 as a ground conductor is used as a connecting portion between the multilayer package and the package lid and the BGA. Low loss and 3
It becomes possible to transmit a dimensional RF signal. Further, by mounting the MMIC, the control LSI and the like on the multilayer substrate used as the lid of the multilayer package, it is possible to realize a compact RF module having a higher packaging density. Further, as a semiconductor element mounted on the lid of the multi-layer package, by mounting a low noise amplifier having a better noise figure than that mounted on the cavity, the receiving module has a good noise characteristic, and the element antenna and the semiconductor chip It is possible to realize an RF module with low connection loss.

Further, by realizing the connecting portion between the multi-layer package and the mother board by the ball grid array, the RF connecting and the connecting portion for power supply, control and the like can be downsized and the space can be saved as compared with the connection by the connector. It is possible to realize the above and to perform these connections in a single operation, and it is possible to realize a low-cost and small-sized RF module. In addition, a BGA is used as an input / output RF interface, and a thermal VIA is provided below the semiconductor element, so that a semiconductor chip having a heat generating portion such as a semiconductor amplifier can be efficiently radiated. Also, by using the ACF for the connection between the cavity and the lid, the power supply and control can be performed together with the RF connection in a single operation, so that the RF is inexpensive.
It becomes possible to make it a module. Further, the ACF makes it possible to realize the airtightness at the gross leak level.

Embodiment 3. Although the first and second embodiments describe the reception RF module, even in the case of the transmission RF module, the high output amplifier (MMIC,
Since it is possible to reduce the connection loss of the output part of (HPA), it is possible to realize an RF module that is small in size, low in cost, and high in power efficiency. FIG. 6 shows a system diagram of the transmission module. In FIG. 6, the same reference numerals as those in FIGS. 1 and 10 denote the same parts, and 36 denotes a first high output amplifier (HP).
A), 37 is a second high power amplifier (HPA), 38 is a first transmission input terminal, and 39 is a second transmission input terminal.

Fourth Embodiment FIG. 7 is an explanatory diagram illustrating an active phased array antenna configured using the RF module according to the first to third embodiments. (A) is a receiving antenna 41, and receiving RF modules 43 are arranged in a square on a mother board. (B) is a transmitting antenna 42
The transmission RF modules 44 are arranged in a square on the mother board. Note that a hexagonal arrangement may be used as shown in (c).
The amount of phase shift of each phase shifter is controlled from the mother board 22 by providing control wiring to each module and sending a control signal (serial control signal or parallel control signal). According to the fourth embodiment, it is possible to realize an active phased array antenna with a small size and low cost.

Embodiment 5. FIG. 8 is a block diagram showing an example of a communication device configured using the active phased array antenna according to the fourth embodiment. Embodiment 5
According to this, a small-sized and low-cost communication device can be realized. In FIG. 8, 42 is a transmission phased array antenna, 41 is a reception phased array antenna, 45 is a transmission frequency converter, 46 is a modulator, 47 is a reception wave number converter,
Reference numeral 48 is a demodulator, and 49 is a data terminal or video encoding device in this example.

[0024]

As described above, the present invention has a box-shaped cavity whose one surface forms an opening and a lid for covering the opening, and the lid is composed of a multilayer substrate laminated in the thickness direction thereof. , The bottom of the cavity and the side wall are composed of a multi-layered substrate laminated in the same direction as the lid, the element antenna provided on the surface of the lid, and the multi-layered substrate constituting the cavity and the lid of the multi-layered package. The contact surface between the high-frequency circuit configured by the mounted semiconductor integrated circuit and the passive circuit, which transmits a high-frequency signal to the element antenna or receives the high-frequency signal from the element antenna, and the side wall upper surface of the cavity and the side wall upper surface of the lid face each other. Connection terminals for connecting the wiring on the cavity side and the wiring on the lid side and the high frequency signal output to the high frequency circuit or the high frequency circuit. A mother board for inputting a high-frequency signal and for distributing and combining the high-frequency signal, a control signal of a high-frequency circuit, and a signal including a power supply, and a connecting part provided in the multi-layer package for connecting the multi-layer package Therefore, it is possible to obtain a high-frequency module that can be realized in a small size and at low cost.

Further, as described above, since the present invention is constructed by using the above high frequency module, it is possible to obtain a small-sized and low-cost active phased array antenna. Further, as described above, since the present invention is configured by using the active phased array antenna as described above, it is possible to obtain a small-sized and low-cost communication device.

[Brief description of drawings]

FIG. 1 is an explanatory diagram illustrating a first embodiment of the present invention.

FIG. 2 is an explanatory diagram illustrating a heat dissipation device that dissipates heat by thermal VIA.

FIG. 3 is an explanatory diagram illustrating a structure of an RF transmission line provided on a side wall of a cavity.

FIG. 4 is an explanatory diagram illustrating a second embodiment of the present invention.

FIG. 5 is an explanatory diagram illustrating details of electromagnetic coupling by slots.

FIG. 6 is a system diagram showing a transmission module.

FIG. 7 is an explanatory diagram illustrating an active phased array antenna configured using the RF module according to the first to third embodiments.

FIG. 8 is a block diagram showing an example of a communication device configured using an active phased array antenna according to a fourth embodiment.

FIG. 9 is a configuration diagram showing a configuration example of a conventional RF module.

FIG. 10 is a system diagram showing a conventional RF module.

[Explanation of symbols]

1,8 Input terminal, 2,9 Low noise amplifier, 3,10
Low-pass filter, 490 ° hybrid circuit, 5, 1
1 low noise amplifier, 6,12 phase shifter, 7,13 output terminal, 17 multilayer package, 17a cavity, 1
7b lid, 26 thermal VIA, 21 ball grid array, 22 mother board, 31 element antenna.

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Satoshi Owada             2-3 2-3 Marunouchi, Chiyoda-ku, Tokyo             Inside Ryo Electric Co., Ltd. (72) Inventor Hideyuki Ohashi             2-3 2-3 Marunouchi, Chiyoda-ku, Tokyo             Inside Ryo Electric Co., Ltd. (72) Inventor, Hinoemata             2-3 2-3 Marunouchi, Chiyoda-ku, Tokyo             Inside Ryo Electric Co., Ltd. (72) Inventor Kazutomi Mori             2-3 2-3 Marunouchi, Chiyoda-ku, Tokyo             Inside Ryo Electric Co., Ltd. (72) Inventor Naoki Takagi             2-3 2-3 Marunouchi, Chiyoda-ku, Tokyo             Inside Ryo Electric Co., Ltd. F-term (reference) 5J021 AA05 AA09 AA11 AB06 CA03                       DB01 EA02 FA06 FA23 FA26                       FA34 HA10 JA07 JA08                 5J045 AA01 AB05 DA10 EA08 FA02                       GA02 HA04 JA12 JA17 JA19                       MA07 NA03                 5K062 AA09 AC01 AD04 BB14 BC02                       BF03 BF07

Claims (12)

[Claims] 1. A box-shaped cavity having an opening formed on one surface and a lid for covering the opening, the lid being composed of a multilayer substrate laminated in the thickness direction thereof, the cavity being a bottom portion and The side wall is mounted on a multi-layered package formed of a multi-layered substrate laminated in the same direction as the lid, an element antenna provided on the surface of the lid, and a multi-layered substrate forming the cavity and the lid of the multi-layered package. And a high-frequency circuit configured by a semiconductor integrated circuit and a passive circuit that transmits a high-frequency signal to the element antenna or receives a high-frequency signal from the element antenna, and a side wall upper surface of the cavity and the side wall upper surface of the lid. High-frequency signals to the high-frequency circuit and connection terminals that are respectively provided at opposing positions on the surface and that connect the wiring on the cavity side and the wiring on the lid side. In order to connect the mother board for outputting or inputting a high frequency signal from the high frequency circuit and for distributing and synthesizing the high frequency signal, the control signal of the high frequency circuit and the signal including the power source, and the multilayer package, A high-frequency module, comprising: a connection component provided in a multilayer package. 2. The high frequency circuit comprises a high output amplifier and a phase shifter composed of a monolithic microwave integrated circuit, a controller for a phase shifter composed of a large scale integrated circuit, a 90 ° hybrid circuit of a passive circuit and a low pass filter. The high frequency module according to claim 1, wherein the high frequency module is mounted in the cavity. 3. In the high frequency circuit, a low noise amplifier composed of a monolithic microwave integrated circuit is mounted on the lid, a low noise amplifier and a phase shifter composed of the monolithic microwave integrated circuit, and a large scale integrated circuit. The high-frequency module according to claim 1, wherein the controller for phase shifter, the 90 ° hybrid circuit of the passive circuit, and the low-pass filter, each of which is configured by, are mounted in the cavity. 4. The high frequency module according to claim 3, wherein a low noise amplifier having a noise figure smaller than that of the low noise amplifier mounted in the cavity is mounted on the lid. 5. The high frequency module according to claim 1, wherein the element antenna is connected to an input terminal of the high frequency circuit by a non-contact connection device. 6. The high frequency module according to claim 5, wherein the non-contact connection device is configured by electromagnetic coupling between a microstrip line and a slot line. 7. The connection component is composed of a ball grid array in which conductor balls or bumps are arranged in a grid pattern, and is provided on the outer surface of the bottom of the cavity. Item 7. The high frequency module according to any one of items 6. 8. The multilayer package has a plurality of heat dissipation via holes, one end of which is in contact with a heat generating portion of a semiconductor integrated circuit mounted in the cavity and the other end of which extends to an outer surface of the bottom of the cavity, and the other end of which is formed. 8. A heat dissipation device comprising an electrode pad formed so as to be in full contact with one ball in the ball grid array, which is in contact with the electrode pad. High frequency module. 9. The multi-layered package includes a central via hole formed inside a sidewall of the cavity and serving as a central conductor, outer via holes formed on both sides of the central via hole, and side surface metallization formed on both sides of the sidewall. 9. The high-frequency module according to claim 1, further comprising a high-frequency transmission line in a pseudo-coaxial mode including an outer conductor having a ground potential and an outer conductor. 10. The multilayer package, wherein an anisotropic conductive film is inserted between an upper surface of a side wall of the cavity and the lid, and the anisotropic conductive film is pressed to connect the connection terminals. The high frequency module according to any one of claims 1 to 9. 11. An active phased array antenna comprising the high frequency module according to any one of claims 1 to 10. 12. A communication device comprising the active phased array antenna according to claim 11.