CN116174435B - Semiconductor etching equipment - Google Patents
Semiconductor etching equipment Download PDFInfo
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- CN116174435B CN116174435B CN202310432502.0A CN202310432502A CN116174435B CN 116174435 B CN116174435 B CN 116174435B CN 202310432502 A CN202310432502 A CN 202310432502A CN 116174435 B CN116174435 B CN 116174435B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000005530 etching Methods 0.000 title claims abstract description 30
- 239000007788 liquid Substances 0.000 claims abstract description 112
- 238000000926 separation method Methods 0.000 claims abstract description 86
- 238000011084 recovery Methods 0.000 claims abstract description 39
- 238000004064 recycling Methods 0.000 claims abstract description 9
- 230000000149 penetrating effect Effects 0.000 claims abstract description 5
- 238000005507 spraying Methods 0.000 claims abstract description 5
- 238000005192 partition Methods 0.000 claims description 112
- 230000007246 mechanism Effects 0.000 claims description 50
- 230000005540 biological transmission Effects 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 41
- 230000008569 process Effects 0.000 claims description 40
- 230000002093 peripheral effect Effects 0.000 claims description 29
- 230000000903 blocking effect Effects 0.000 claims description 15
- 238000007789 sealing Methods 0.000 claims description 11
- 239000007921 spray Substances 0.000 claims description 8
- 239000000126 substance Substances 0.000 abstract description 94
- 239000007789 gas Substances 0.000 description 77
- 210000000078 claw Anatomy 0.000 description 16
- 230000006872 improvement Effects 0.000 description 13
- 230000033001 locomotion Effects 0.000 description 8
- 230000001360 synchronised effect Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 239000002912 waste gas Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000001174 ascending effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B15/00—Preventing escape of dirt or fumes from the area where they are produced; Collecting or removing dirt or fumes from that area
- B08B15/04—Preventing escape of dirt or fumes from the area where they are produced; Collecting or removing dirt or fumes from that area from a small area, e.g. a tool
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
The invention provides a semiconductor etching device, comprising: the device comprises a workbench, a cavity assembly arranged on the workbench, a liquid spraying assembly arranged on the workbench and formed on the periphery outer side of the cavity assembly, and a bearing assembly penetrating the workbench and extending into the cavity assembly along the axial direction; the cavity assembly includes: the recovery cavity and the fixed cover are covered on the recovery cavity and are enclosed with the recovery cavity to form an air collection cavity; the recycling cavity comprises: the cavity bottom structure is coaxially arranged on a first separation cover outside the cavity bottom structure, a plurality of second separation covers sleeved on the first separation covers are outwards formed in sequence along the radial direction of the first separation covers, the outer cover body of the second separation covers is coaxially sleeved on the outer cover body, and the air guide passage is communicated with the air collection cavity to enable air in the recovery cavity to circulate. Through this application, realized retrieving the circulation of chemical gas in the cavity, prevent that chemical gas from gathering from causing influence such as corruption, pollution to the wafer surface in retrieving the cavity to ensure wafer surface quality and wafer performance.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to semiconductor etching equipment.
Background
In the semiconductor manufacturing process, an etching process is one of important steps in the semiconductor manufacturing process, and the etching process comprises: dry etching and wet etching. The wet etching needs to use various chemical liquids in the wafer processing, the chemical liquids volatilize to form chemical gases in the wafer processing process, and the used chemical liquids need to be recovered separately to avoid chemical reactions caused by mixing the various chemical liquids.
The chinese patent application publication No. CN113124167a discloses a shaft sealing structure and a semiconductor device, the shaft sealing structure comprising: the base is provided with a vertically penetrating mounting hole, a moving shaft is assembled in the mounting hole, and a gap is reserved between the outer wall of the moving shaft and the inner wall of the mounting hole; the ventilation pipeline is arranged in the movement shaft and is provided with an air inlet end and an air outlet end, the air inlet end is communicated with an air supply source, and the air outlet end is communicated with the gap. By introducing the sealing structure, the process cavity and the outside are prevented from communicating with each other through a gap formed by the motion shaft and the base, so that impurities, waste gas, waste liquid, corrosive liquid and the like in wet treatment are prevented from entering the gap and diffusing to the outside.
However, the above-mentioned prior art semiconductor device seals only the gap formed by the moving shaft and the base by the sealing structure to prevent the exhaust gas, the waste liquid, etc. from entering the gap and diffusing to the outside. Therefore, the semiconductor device in the prior art has the defect that waste gas is difficult to circulate in the wafer processing process, so that the waste gas is difficult to discharge and gather in the process cavity, and further the waste gas can cause corrosion, pollution and other effects on the surface of the wafer, the surface quality of the wafer is reduced, and the performance of the wafer is affected. Further, when the inner baffle cover is raised and overlapped with the outer baffle cover or the inner baffle cover and the outer baffle cover are simultaneously lowered, it is difficult to discharge the exhaust gas in the outer sump, resulting in the exhaust gas being accumulated in the outer sump.
In view of this, there is a need for improvements in the semiconductor etching apparatus of the prior art to solve the above-described problems.
Disclosure of Invention
The invention aims to disclose a semiconductor etching device which is used for solving a plurality of defects of the semiconductor device in the prior art, and particularly aims to realize circulation of chemical gas in a recovery cavity and prevent the influence of the chemical gas gathered in the recovery cavity on corrosion, pollution and the like of the surface of a wafer so as to ensure the surface quality and the performance of the wafer.
To achieve the above object, the present invention provides a semiconductor etching apparatus comprising: a table, a cavity assembly arranged on the table, a liquid spraying assembly arranged on the table and formed on the outer side of the cavity assembly along the circumference, and a bearing assembly penetrating the table and extending into the cavity assembly along the axial direction;
the cavity assembly includes: the recovery cavity and the fixed cover are covered on the recovery cavity and are enclosed with the recovery cavity to form an air collection cavity;
the recycling cavity includes: the cavity bottom structure is coaxially arranged on a first separation cover outside the cavity bottom structure, a plurality of second separation covers sleeved on the first separation covers are outwards formed in sequence along the radial direction of the first separation covers, an outer cover body coaxially sleeved on the second separation covers, and an air guide passage communicated with the air collection cavity for air circulation in the recovery cavity.
As a further improvement of the present invention, the air guide passage includes:
the first air guide passage is formed between the first separation cover and the cavity bottom structure, the second air guide passage is formed between the first separation cover and the second separation cover, and the third air guide passage is formed between the second separation cover and the outer cover body.
As a further improvement of the present invention, the cavity bottom structure includes:
the inner edge of the cavity base extends upwards along the vertical direction to form an inner annular partition plate, the outer edge of the cavity base extends upwards along the vertical direction to form an outer annular partition plate, and a first collecting cavity is formed between the inner annular partition plate and the outer annular partition plate.
As a further improvement of the present invention, the first partition cover includes:
the first annular cover body extends upwards along the vertical direction to form a first annular coaming, the first annular coaming has an extending trend close to the central axis of the recovery cavity, the first annular cover body sequentially extends inwards in an inclined manner along the radial direction to form a guide plate and a first partition plate formed by vertical downward extension, the bottom end of the first annular cover body sequentially extends outwards horizontally along the radial direction to form a first connecting part and a second partition plate formed by vertical upward extension, and a second collecting cavity is formed between the first annular cover body and the second partition plate;
The first partition plate and the first annular cover body form a first annular area for accommodating at least part of the outer annular partition plate, and the first partition plate at least partially extends into the first collecting cavity to form a circuitous first air guide passage for enabling air in the first collecting cavity to circulate to the air collecting cavity.
As a further improvement of the present invention, the second partition cover includes:
the second annular cover body extends upwards along the vertical direction to form a second annular coaming, the second annular coaming has an extending trend close to the central axis of the recovery cavity, the second annular coaming extends downwards along the vertical direction to form a third partition plate, the bottom end of the second annular cover body sequentially extends outwards horizontally along the radial direction to form a second connecting part, a fourth partition plate extends upwards vertically to form a fourth partition plate, and a third collecting cavity is formed between the second annular cover body and the fourth partition plate;
the second annular cover body and the third partition plate form a second annular area for accommodating at least part of the second partition plate, and the third partition plate at least partially extends into the second collecting cavity to form a circuitous second air guide passage for enabling air in the second collecting cavity to circulate into the air collecting cavity.
As a further improvement of the present invention, the housing includes:
the third annular cover body extends upwards along the vertical direction to form a third annular coaming, the third annular coaming has an extending trend close to the central axis of the recovery cavity, and the third annular coaming extends downwards along the vertical direction to form a fifth partition plate;
and a third annular region for accommodating at least part of the fourth partition plate is formed between the third annular cover body and the fifth partition plate, and the fifth partition plate at least partially extends into the third collecting cavity to form a circuitous third air guide passage for enabling air in the third collecting cavity to circulate into the air collecting cavity.
As a further improvement of the present invention, the extending trend of the outer peripheral surface of the first annular coaming is matched with the extending trend of the inner peripheral surface of the second annular coaming, and the outer peripheral surface of the first annular coaming is at least partially attached to the inner peripheral surface of the second annular coaming.
As a further improvement of the present invention, the extending trend of the outer peripheral surface of the second annular coaming is matched with the extending trend of the inner peripheral surface of the third annular coaming, and the outer peripheral surface of the second annular coaming is at least partially attached to the inner peripheral surface of the third annular coaming.
As a further improvement of the invention, the inner edge of the first annular coaming is configured into an annular liquid guide part, the inner edge of the second annular coaming is configured into an annular liquid blocking part which has downward extending trend along the vertical direction and is matched with the annular liquid guide part, and the annular liquid blocking part is attached to the annular liquid guide part;
the inner edge of the third annular coaming is configured to have an annular liquid blocking portion which extends downwards along the vertical direction and is matched with the annular liquid blocking portion, and the annular liquid blocking portion is attached to the annular liquid blocking portion.
As a further improvement of the present invention, the cavity assembly further includes: the central cavity structure is coaxially arranged in the recovery cavity;
the central cavity structure comprises: the device comprises a supporting table, a supporting block axially arranged on the supporting table, an annular connecting seat axially nested in the supporting block, a sealing ring arranged on the annular connecting seat and circumferentially propping against the inner annular partition plate, and an annular guide plate coaxially sleeved on the annular connecting seat and used for guiding liquid to enter the first collecting cavity.
As a further improvement of the present invention, the semiconductor etching apparatus further includes: the lifting assembly is formed at the bottom of the workbench;
The lifting assembly includes: and the lifting mechanism is used for independently driving the first separation cover, the second separation cover and the outer cover body to lift along the vertical direction so as to form a process cavity.
As a further improvement of the present invention, the process chamber includes:
the lifting mechanism drives the first separation cover, the second separation cover and the outer cover body to rise along the vertical direction, and a first process cavity which is formed between the first separation cover and the central cavity structure and is communicated with the first collecting cavity is formed;
the lifting mechanism drives the second separation cover and the outer cover body to rise along the vertical direction, and a second process cavity is formed between the first separation cover and the second separation cover and communicated with the second collecting cavity;
the lifting mechanism drives the outer cover body to lift along the vertical direction, and a third process cavity which is formed between the second separation cover and the outer cover body and communicated with the third collecting cavity is formed.
As a further improvement of the present invention, the liquid ejecting assembly includes: a plurality of rotary swing arms provided with nozzles;
the support assembly comprises: the tray is arranged at the output end of the transmission motor and driven by the transmission motor, and a lifting unit for supporting the tray to lift.
Compared with the prior art, the invention has the beneficial effects that:
the chemical gas in the recovery cavity can enter the gas collection cavity through the gas guide passage, so that circulation of the chemical gas in the recovery cavity is realized, the influence of chemical gas aggregation on the surface of the wafer caused by corrosion, pollution and the like in the recovery cavity is prevented, and the surface quality and the performance of the wafer are ensured.
Drawings
FIG. 1 is an overall view of a semiconductor etching apparatus according to the present invention;
FIG. 2 is an overall view of another view of the semiconductor etching apparatus according to the present invention;
FIG. 3 is a cross-sectional view of the connection of the table to the recovery chamber;
FIG. 4 is a cross-sectional view of the support table coupled to the support blocks;
FIG. 5 is a schematic view of a first air guide passage, a second air guide passage, and a third air guide passage;
FIG. 6 is a schematic view of the housing in use;
FIG. 7 is a schematic view of the second partition cover and the outer cover in use;
FIG. 8 is a schematic view of the first partition cover, the second partition cover and the outer cover in use;
FIG. 9 is a perspective view of the attachment of the retaining cap to the suction line;
FIG. 10 is a perspective view of the third lift mechanism coupled to the housing;
FIG. 11 is a perspective view of the first drive mechanism coupled to a first drive rod;
FIG. 12 is a perspective view of a third gear train coupled to a third drive rod;
fig. 13 shows the second transmission mechanism connected to the second transmission rod.
Detailed Description
The present invention will be described in detail below with reference to the embodiments shown in the drawings, but it should be understood that the embodiments are not limited to the present invention, and functional, method, or structural equivalents and alternatives according to the embodiments are within the scope of protection of the present invention by those skilled in the art.
It should be understood that, in the present application, the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "horizontal", "top", "bottom", "inner", "outer", "radial", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present technical solution and simplifying the description, and do not indicate or imply that the indicated devices or elements must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present technical solution.
In particular, in the following embodiments, the term "axial direction" refers to the direction indicated by the central axis L in fig. 3. The term "vertical direction" refers to a direction parallel to the axial direction.
An embodiment of a semiconductor etching apparatus is disclosed with reference to fig. 1 to 13.
Referring to fig. 1 and 3, in the present embodiment, the semiconductor etching apparatus includes: a table 1, a chamber assembly 2 disposed on the table 1, a spray assembly 60 disposed on the table 1 and formed on a circumferential outer side of the chamber assembly 2, and a support assembly 50 penetrating the table 1 and extending into the chamber assembly 2 in an axial direction; the chamber body assembly 2 includes: the recovery cavity 20 and the fixed cover 30 cover the recovery cavity 20 and enclose the recovery cavity 20 to form the gas collection cavity 101; the recovery chamber 20 includes: the cavity bottom structure 21 is coaxially arranged on a first separation cover 22 outside the cavity bottom structure 21, a plurality of second separation covers 23 sleeved on the first separation cover 22 are sequentially formed outwards along the radial direction of the first separation cover 22, an outer cover 24 coaxially sleeved on the second separation cover 23, and an air guide passage 200 communicated with the air collection cavity 101 for air circulation in the recovery cavity 20.
In the process of processing a wafer (not labeled) by the semiconductor etching apparatus, the supporting component 50 is used for supporting and adsorbing and fixing the wafer 300 to drive the wafer 300 to rotate axially, different chemical liquids (for example, phosphoric acid, hydrofluoric acid, buffer etchant, nitric acid and other liquids for etching the wafer) are sprayed on the surface of the wafer 300 through the spraying component 60, and the chemical liquids on the surface of the wafer 300 can be thrown out in the process of rotating the wafer 300, so that different chemical liquids can be collected and recovered independently through the recovery cavity 20, and in particular, different chemical liquids can be collected independently through the cavity bottom structure 21, the first separation cover 22 and the second separation cover 23. The chemical liquid collected by the recycling cavity 20 volatilizes to form chemical gas, and the chemical gas is easy to diffuse in the recycling cavity 20, and can provide a circulation path for the chemical gas diffused in the recycling cavity 20 through the gas guide passage 200, so that the chemical gas in the recycling cavity 20 can circulate along the gas guide passage 200 and enter the gas collection cavity 101, the circulation of the chemical gas in the recycling cavity 20 is realized, the influence of chemical gas aggregation in the recycling cavity 20 on corrosion, pollution and the like on the surface of a wafer is prevented, and the surface quality and the wafer performance of the wafer are ensured.
As shown in fig. 9, the fixed cover 30 is provided with an air exhaust duct 31, and the air exhaust duct 31 communicates with an external exhaust device (not shown) through which the chemical gas in the gas collection chamber 101 can be exhausted, and further facilitates the chemical gas flow in the recovery chamber 20 to the gas collection chamber 101 so as to exhaust the chemical gas.
Further, as shown in fig. 3 and 5, the air guide passage 200 includes: a first air guide passage 201 formed between the first partition cover 22 and the cavity bottom structure 21, a second air guide passage 202 formed between the first partition cover 22 and the second partition cover 23, and a third air guide passage 203 formed between the second partition cover 23 and the outer cover 24. The chemical gas formed by volatilizing the chemical liquid collected by the cavity bottom structure 21 flows through the first gas guide passage 201, so that the chemical gas can flow into the gas collection cavity 101 along the first gas guide passage 201 and be discharged; the chemical gas formed by volatilizing the chemical liquid collected by the first separation cover 22 flows through the second gas guide passage 202, so that the chemical gas can flow into the gas collection cavity 101 along the second gas guide passage 202 and be discharged; the chemical gas formed by volatilizing the chemical liquid collected by the second separation cover 23 flows through the third gas guide passage 203, so that the chemical gas can flow into the gas collection cavity 101 along the third gas guide passage 203 and be discharged; thereby avoiding the accumulation of chemical gas in the chamber bottom structure 21, the first partition cover 22 and the second partition cover 23.
As shown in fig. 1, spray assembly 60 includes: a plurality of rotary swing arms 62 provided with nozzles 61; the nozzle 61 is driven to slowly move towards the edge of the wafer against the center of the wafer by rotating the swing arm 62 and sprays chemical liquid onto the surface of the wafer. The number of the rotary swing arms 62 and the nozzles 61 may be set to correspond to the type of chemical liquid used in the wet etching of the wafer and the liquid for cleaning the wafer (e.g., pure water or deionized water). Illustratively, three sets of rotating swing arms 62 and nozzles 61 are used to spray three chemical liquids onto the wafer surface in the present embodiment, and one set of rotating swing arms 62 and nozzles 61 is used to spray cleaning liquid onto the wafer surface, and the plurality of sets of rotating swing arms 62 and nozzles 61 are selectively activated so that the cavity bottom structure 21, the first partition cover 22 and the second partition cover 23 can separately collect three different chemical liquids, respectively.
As shown in fig. 3, the support assembly 50 includes: a driving motor 51, a tray 52 disposed at an output end of the driving motor 51 and driven by the driving motor 51, and a lifting unit (not shown) for lifting and lowering the tray 52. The wafer is supported and adsorbed and fixed by the tray 52, so that the tray 52 is driven by the transmission motor 51 to realize axial rotation of the wafer, the etched and cleaned wafer is lifted by the lifting unit, and the wafer is taken away by an external manipulator (not shown). Since the support member 50 is not a central point of the present application, the description of the support member 50 is omitted, and any support member 50 capable of supporting and fixing a wafer, rotating the wafer, and lifting the wafer in a vertical direction can be used in the prior art.
Specifically, as shown in fig. 4, 8 and 10, the cavity bottom structure 21 includes: the inner edge of the cavity base 211 extends upwards in the vertical direction to form an inner annular partition 212, the outer edge of the cavity base 211 extends upwards in the vertical direction to form an outer annular partition 213, and a first collecting cavity 214 is formed between the inner annular partition 212 and the outer annular partition 213. The cavity base 211 is fixedly arranged on the workbench 1, chemical liquid thrown out of the wafer can be collected through the first collecting cavity 214, the cavity base 211 is provided with a first liquid discharge pipe (not shown) communicated with the first collecting cavity 214, and the chemical liquid collected by the first collecting cavity 214 can be discharged through the first liquid discharge pipe and independently recycled to external collecting equipment (not shown); the outer annular partition 213 is configured with a plurality of vent holes 2132 for communicating the first collecting cavity 214 with the gas collecting cavity 101, and chemical gas in the first collecting cavity 214 can be further facilitated to enter the gas collecting cavity 101 and be discharged through the vent holes 2132, so that the chemical gas circulation efficiency is improved; the outer annular partition 213 is formed to extend obliquely radially inward to form an annular cover plate 2131 located above the position of the vent hole 2132, chemical liquid dropping into the first collection chamber 214 can be blocked by the annular cover plate 2131, chemical liquid is prevented from flowing into the vent hole 2132 and diffusing to the outside of the recovery chamber 20, and the chemical liquid blocked by the annular cover plate 2131 can be guided into the first collection chamber 214 to be collected.
As shown in fig. 2, 6 to 8, and 11 to 13, the semiconductor etching apparatus further includes: a lifting assembly 70 formed at the bottom of the table 1; the elevating assembly 70 includes: and the lifting mechanism is used for independently driving the first separation cover 22, the second separation cover 23 and the outer cover body 24 to lift in the vertical direction so as to form a process cavity. The lifting mechanism includes a first lifting mechanism 71 for independently driving the first division cover 22 to lift in the vertical direction, a second lifting mechanism 72 for independently driving the second division cover 23 to lift in the vertical direction, and a third lifting mechanism 73 for independently driving the outer cover 24 to lift in the vertical direction. The first lifting mechanism 71, the second lifting mechanism 72 and the third lifting mechanism 73 can respectively play an independent and stable supporting role on the first separation cover 22, the second separation cover 23 and the outer cover 24, and can respectively and independently drive the first separation cover 22, the second separation cover 23 and the outer cover 24 to lift along the vertical direction so as to adapt to different nozzles 61, when three different chemical liquids are sprayed on a wafer, the first separation cover 22, the second separation cover 23 and the outer cover 24 can sequentially shield the three different chemical liquids thrown out by the wafer, and the three different chemical liquids can be collected independently through the cavity bottom structure 21, the first separation cover 22 and the second separation cover 23.
As shown in fig. 4, 8 and 11, the first partition cover 22 includes: the first annular cover 221, the first annular cover 221 extends upwards along the vertical direction to form a first annular coaming 222, the first annular coaming 222 has an extending trend close to the central axis (namely, the central axis L in fig. 3) of the recovery cavity 20, the first annular cover 221 sequentially extends inwards in an inclined manner along the radial direction to form a deflector 223 and a first partition 224 formed by extending downwards vertically, the bottom end of the first annular cover 221 sequentially extends outwards horizontally along the radial direction to form a first connecting part 225 and a second partition 226 formed by extending upwards vertically, and a second collecting cavity 227 formed between the first annular cover 221 and the second partition 226; the first engagement portion 225 is provided with a first drain hole 2251 communicating with the second collection chamber 227, and a second drain pipe (not shown) connected to the first drain hole 2251 and telescopically extending and retracting so that the second drain pipe follows the lifting movement of the first partition cover 22, so that the second drain pipe can drain the chemical liquid collected by the second collection chamber 227 and separately recover to an external collection device (not shown). When the first lifting mechanism 71, the second lifting mechanism 72 and the third lifting mechanism 73 respectively drive the first partition cover 22, the second partition cover 23 and the outer cover 24 to perform lifting movement along the vertical direction so as to form a state shown by the first partition cover 22a, the second partition cover 23a and the outer cover 24a in fig. 8, a first process chamber 103 communicating with the first collecting chamber 214 is formed between the first partition cover 22 and the central chamber structure 10, at this time, the wafer 300 is in the first process chamber 103, chemical liquid is sprayed to the surface of the wafer 300 through one set of nozzles 61 in the spray assembly 60, the chemical liquid on the surface of the wafer 300 can be thrown out along the direction shown by the arrow J3 in fig. 8 during the rotation of the wafer 300, the liquid drops formed by the thrown out part of the chemical liquid are diffused outwards in the first process cavity 103 along the radial direction, the chemical liquid is volatilized to form chemical gas to be diffused in the first process cavity 103, the liquid drops are shielded by the first annular cover 221 and the first annular enclosing plate 222 and are sputtered on the inner peripheral surfaces of the first annular cover 221 and the first annular enclosing plate 222, the chemical liquid drops can be guided to flow downwards to the guide plate 223 and the first partition plate 224 through the first annular cover 221 and the first annular enclosing plate 222, and then flow downwards along the guide plate 223 and the first partition plate 224 and finally drop into the first collecting cavity 214 to realize separate collection and recovery.
Further, as shown in fig. 4, 5 and 8, a first annular region 228 is formed between the first partition 224 and the first annular cover 221, where at least part of the outer annular partition 213 is accommodated, and the first partition 224 extends at least partially into the first collecting chamber 214 to form a first air guiding channel 201 having a roundabout shape for allowing the air in the first collecting chamber 214 to circulate into the air collecting chamber 101. The first annular region 228 accommodates at least part of the outer annular partition 213 in a non-contact manner, and the first partition 224 extends into the first collecting chamber 214 at least part of the first annular partition 224 in a non-contact manner, so as to define a circuitous first gas guiding path 201 (i.e., the first gas guiding path 201 shown by the dashed line in fig. 5 and 8) for the chemical gas in the first collecting chamber 214 to circulate into the gas collecting chamber 101, so that the first partition 22 can prevent the chemical gas remaining in the first collecting chamber 214 from affecting the wafer surface, and the like, when the first partition 22 is switched between the use state and the to-be-used state, both in the use state (i.e., the ascending state shown by the first partition 22a in fig. 8) and the to-be-used state (i.e., the descending state shown by the first partition 22 in fig. 6 or 7) through the first gas guiding path 201 for the chemical gas in the first collecting chamber 214 and the first process chamber 103 to circulate into the gas collecting chamber 101.
As shown in fig. 4 to 8, the second separation cover 23 includes: the second annular cover 231, the second annular cover 231 extends upwards along the vertical direction to form a second annular coaming 232, the second annular coaming 232 has an extending trend close to the central axis of the recovery cavity 20, the second annular coaming 232 extends downwards along the vertical direction to form a third partition 233, the bottom end of the second annular cover 231 sequentially extends outwards horizontally along the radial direction to form a second connecting part 234 and a fourth partition 235 which extends upwards vertically, and a third collecting cavity 236 is formed between the second annular cover 231 and the fourth partition 235; the second engagement portion 234 is provided with a second drain hole 2341 communicating with the third collection chamber 236, and a third drain pipe (not shown) connected to the second drain hole 2341 and telescopically extending and retracting in such a manner as to follow the lifting movement of the second partition cover 23, so that the third drain pipe can drain the chemical liquid collected by the third collection chamber 236 and separately recover to an external collection device (not shown). When the second lifting mechanism 72 and the third lifting mechanism 73 respectively drive the second separation cover 23 and the outer cover 24 to perform an ascending motion along a vertical direction, so as to form a state shown by the second separation cover 23a and the outer cover 24a in fig. 7, the first separation cover 22 and the second separation cover 23a form a second process chamber 104 communicated with the second collecting chamber 227, at this time, the wafer 300 is located in the second process chamber 104, chemical liquid is sprayed to the surface of the wafer through one group of nozzles 61 in the spray assembly 60, during the rotation of the wafer, the chemical liquid on the surface of the wafer can be thrown out along a direction shown by an arrow J2 in fig. 7, a part of liquid drops formed by the thrown out chemical liquid can diffuse outwards in the second process chamber 104 along a radial direction, the chemical liquid can volatilize to form chemical gas to diffuse in the second process chamber 104, a part of liquid drops can be blocked by the second annular cover 231 and the second annular cover 232, and the inner peripheral surface of the first annular cover 221, and the first annular cover 221 can be blocked by the first annular cover 222 and the second annular cover 222, and the second annular cover 222 can be separately guided to flow to the second annular cover 222 and the second annular cover 232, and the liquid drops can be collected and finally flow down to the second annular cover 222 and the annular cover 221.
Further, as shown in fig. 4, 5 and 7, a second annular region 237 for accommodating at least part of the second partition 226 is formed between the second annular cover 231 and the third partition 233, and the third partition 233 extends at least partially into the second collecting chamber 227 to form a second air guide passage 202 having a detour shape for allowing air in the second collecting chamber 227 to circulate into the air collecting chamber 101. The second annular region 237 accommodates at least a portion of the second partition 226 in a non-contact manner, and the third partition 233 extends into the second collecting chamber 227 in a non-contact manner, so as to define a circuitous second gas guiding path 202 (i.e., the second gas guiding path 202 shown by the dashed line in fig. 5 and 7) for the chemical gas collected in the second collecting chamber 227 to circulate into the gas collecting chamber 101, so that the second partition cover 23 can provide the chemical gas flowing into the second collecting chamber 227 and the chemical gas flowing into the second process chamber 101 through the second gas guiding path 202 in both the use state (i.e., the rising state shown by the second partition cover 23a in fig. 7 or 8) and the ready-to-use state (i.e., the falling state shown by the second partition cover 23 in fig. 6) to prevent the chemical gas remaining in the second collecting chamber 227 from affecting the wafer surface due to the corrosive gas left in the second partition cover 23 when the second partition cover 23 is switched between the use state and the ready-to use state.
As shown in fig. 4 to 8, the housing 24 includes: a third annular cover 241, the third annular cover 241 extending upward in the vertical direction to form a third annular shroud 242, the third annular shroud 242 having an extending tendency toward the central axis of the recovery cavity 20, and a fifth partition 243 formed by the third annular shroud 242 extending downward in the vertical direction; when the third lifting mechanism 73 drives the outer cover 24 to move up along the vertical direction to form a state shown by the outer cover 24a in fig. 6, a third process chamber 105 communicating with the third collecting chamber 236 is formed between the second separation cover 23 and the outer cover 24a, at this time, the wafer 300 is in the third process chamber 105, the chemical liquid is sprayed to the surface of the wafer through one set of nozzles 61 in the liquid spraying assembly 60, during the rotation of the wafer, the chemical liquid on the surface of the wafer can be thrown out along the direction shown by the arrow J1 in fig. 6, the liquid drops formed by the thrown out part of the chemical liquid diffuse outwards in the third process chamber 105 along the radial direction, the chemical liquid volatilizes to form chemical gas to diffuse in the third process chamber 105, and part of the liquid drops are blocked by the third annular cover 241 and the third annular shroud 242 and are sputtered on the inner peripheral surfaces of the third annular cover 241 and the third annular shroud 231, and the liquid drops formed by the second annular cover 231 and the second annular shroud 232 can be guided to flow downwards to the third annular shroud 236 to realize separate collection and collection of the liquid drops.
Further, as shown in fig. 4 to 6, a third annular region 244 accommodating at least part of the fourth partition 235 is formed between the third annular cover 241 and the fifth partition 243, and the fifth partition 243 extends at least partially into the third collecting chamber 236 to form a third air guide passage 203 having a detour shape for allowing air in the third collecting chamber 236 to circulate into the air collecting chamber 101. The third annular region 244 accommodates at least a portion of the fourth partition 235 in a non-contact manner, and the fifth partition 243 extends into the third collection chamber 236 in a non-contact manner, so as to define a circuitous third gas guiding path 203 (i.e., the third gas guiding path 203 shown by the dashed line in fig. 5 and 6) for the chemical gas collected in the third collection chamber 236 to circulate into the gas collection chamber 101, so that the cover 24 can be used (i.e., the rising state shown by the cover 24a in fig. 6, 7 or 8) or used (i.e., the falling state shown by the cover 24 in fig. 3) to enable the chemical gas in the third collection chamber 236 and the third process chamber 105 to circulate into the gas collection chamber 101 through the third gas guiding path 203, thereby preventing the chemical gas from accumulating in the third collection chamber 236 and the third process chamber 105, and preventing the residual chemical gas in the third collection chamber 236 from affecting the wafer surface due to the corrosive gas when the cover 24 is switched between the use state and the use state.
As shown in fig. 4 and 6, the extending trend of the outer peripheral surface of the first annular enclosing plate 222 is matched with the extending trend of the inner peripheral surface of the second annular enclosing plate 232, and the outer peripheral surface of the first annular enclosing plate 222 is at least partially attached to the inner peripheral surface of the second annular enclosing plate 232; the inner edge of the first annular shroud 222 is configured with an annular liquid guiding portion 229, and the inner edge of the second annular shroud 232 is configured with an annular liquid blocking portion 238 extending downward in the vertical direction and matching the annular liquid guiding portion 229, the annular liquid blocking portion 238 being in contact with the annular liquid guiding portion 229. When the first lifting mechanism 71, the second lifting mechanism 72 and the third lifting mechanism 73 respectively drive the first separation cover 22, the second separation cover 23 and the outer cover 24 to move upwards along the vertical direction, the outer circumferential surface of the first annular coaming 222 is at least partially attached to the inner circumferential surface of the second annular coaming 232 when the first annular coaming 222 contacts the second annular coaming 232 in the lifting process, and the annular liquid blocking part 238 is attached to the annular liquid guiding part 229, so that the first separation cover 22a, the second separation cover 23a and the outer cover 24a in fig. 8 are formed, a certain sealing effect is achieved on the connection part between the first separation cover 22 and the second separation cover 23, and liquid drops formed by chemical liquid thrown out by the wafer 300 are prevented from entering the second collecting cavity 227, so that different chemical liquids are prevented from being mixed.
As shown in fig. 4 and 7, the extending trend of the outer peripheral surface of the second annular enclosing plate 232 is matched with the extending trend of the inner peripheral surface of the third annular enclosing plate 242, and the outer peripheral surface of the second annular enclosing plate 232 is at least partially attached to the inner peripheral surface of the third annular enclosing plate 242; the inner edge of the third annular shroud 242 is configured with an annular liquid stop 245 extending downwardly in a vertical direction and matching the annular liquid stop 238, the annular liquid stop 245 conforming to the annular liquid stop 238. When the second lifting mechanism 72 and the third lifting mechanism 73 respectively drive the second separation cover 23 and the outer cover 24 to perform lifting motion along the vertical direction, and the second annular enclosing plate 232 contacts the third annular enclosing plate 242 in the lifting process, the outer peripheral surface of the second annular enclosing plate 232 is at least partially attached to the inner peripheral surface of the third annular enclosing plate 242, and the annular liquid blocking part 245 is attached to the annular liquid blocking part 238, so as to form a state shown by the second separation cover 23a and the outer cover 24a in fig. 7, thereby playing a certain sealing role on the connection part between the second separation cover 23 and the outer cover 24, so as to prevent liquid drops formed by chemical liquid thrown out by the wafer 300 from entering the third collecting cavity 236, and avoid mixing different chemical liquids.
As shown in fig. 3 to 5, the chamber body assembly 2 further includes: a central cavity structure 10 coaxially disposed within the recovery cavity 20; the central cavity structure 10 includes: the support table 11, the supporting block 12 that disposes in the supporting table 11 axially, the annular joint seat 13 that nests in the supporting block 12 axially, dispose in annular joint seat 13 and the sealing washer 14 of the annular baffle 212 in the circumference of holding, and the coaxial cover is located annular joint seat 13 and is used for guiding the liquid to get into the annular guide plate 15 of first collection chamber 214. In the state shown in fig. 8, the first separation cover 22a, the second separation cover 23a and the outer cover 24a, the liquid drops formed by the chemical liquid thrown out by the wafer 300 can be shielded and guided by the annular guide plate 15 in the process of dripping down, so as to prevent the liquid from leaking into the central cavity structure 10 to pollute the interior. The annular adaptor 13 is configured as a liquid collecting groove 131 for collecting chemical liquid, the outer diameter of the tip end of the annular adaptor 13 is larger than the inner diameter of the annular liquid guiding portion 229, and the tip end of the annular adaptor 13 is configured as an annular guide portion 132 inclined radially inward. So that a part of the chemical liquid droplets falling onto the annular liquid guide 229 can fall onto the annular guide 132 and flow into the liquid collection tank 131 along the annular guide 132 to be collected.
As shown in fig. 10 to 13, the first lifting mechanism 71 includes: two groups of first supporting claws 711 which are symmetrically arranged along the central axis of the first separation cover 22 and fixedly connected with the first separation cover 22, a first transmission rod 712 which is arranged along the vertical direction and connected with the first supporting claws 711, and a first transmission mechanism 81 for driving the first transmission rod 712 to lift along the vertical direction; the first transmission mechanism 81 includes: the two groups of mounting seats 811 are arranged at the bottom of the workbench 1, a rotating rod 812 which is in rotary connection with the mounting seats 811 and is arranged along the vertical direction, a transmission block 813 which is sleeved on the rotating rod 812 and is in threaded connection with the rotating rod 812, a driving motor 814 which is arranged at the bottom of the workbench 1, a synchronous wheel 815 and a synchronous belt 816 which is connected with the synchronous wheel 815 are arranged at the output end of the driving motor 814 and one end of the rotating rod 812 which longitudinally extends through the mounting seats 811; one end of the first transmission rod 712, which is far away from the first supporting claw 711, is connected with a transmission block 813. In the process that the first lifting mechanism 71 drives the first separation cover 22 to move up and down along the vertical direction, the driving motor 814 drives the synchronous wheel 815 to rotate, so that the synchronous belt 816 drives the synchronous wheel 815 arranged at one end of the rotating rod 812 extending beyond the mounting seat 811 to synchronously drive the rotating rod 812 to rotate on the mounting seat 811, so that the transmission block 813 in threaded connection with the rotating rod 812 is driven to move up or down along the rotating rod 812, so that the transmission block 813 can synchronously drive the first transmission rod 712 to move up or down along the vertical direction, the first transmission rod 712 drives the first supporting claw 711 to enable the first separation cover 22 to move up and down along the vertical direction, the driving mode of the first transmission mechanism 81 can play a role in accurately positioning the up and down position of the first separation cover 22, and the accuracy of the up and down position of the first separation cover 22 is improved, and the stability and accuracy of the first transmission mechanism 81 are higher than those of an inner up and down mechanism and an outer up and down mechanism included in a semiconductor device in the prior art.
The second lifting mechanism 72 includes: two groups of second supporting claws 721 symmetrically arranged along the central axis of the second separation cover 23 and fixedly connected with the second separation cover 23, a second transmission rod 722 arranged along the vertical direction and connected with the second supporting claws 721, and a second transmission mechanism 82 for driving the second transmission rod 722 to lift along the vertical direction; the third lifting mechanism 73 includes: two groups of third supporting claws 731 which are symmetrically arranged along the central axis of the outer cover 24 and fixedly connected with the outer cover 24, a third transmission rod 732 which is arranged along the vertical direction and connected with the third supporting claws 731, and a second transmission mechanism 82 for driving the third transmission rod 732 to lift along the vertical direction; the first transmission mechanism 81, the second transmission mechanism 82 and the third transmission mechanism 83 have the same structure and the same operation manner, and are not described herein. The second transmission mechanism 82 and the third transmission mechanism 83 can respectively and independently drive the second transmission rod 722 and the third transmission rod 732 to lift along the vertical direction, so that the second transmission rod 722 and the third transmission rod 732 can respectively drive the second supporting claw 721 and the third supporting claw 731 to enable the second separation cover 23 and the outer cover 24 to realize the lifting motion along the vertical direction, and the second transmission mechanism 82 and the third transmission mechanism 83 can also play a role in accurately positioning the lifting positions of the second separation cover 23 and the outer cover 24 so as to improve the accuracy of the lifting positions of the second separation cover 23 and the outer cover 24.
In addition, the first transmission rod 712, the second transmission rod 722 and the third transmission rod 732 are axially sleeved with a first telescopic cover 91, a second telescopic cover 92 and a third telescopic cover 93, the first telescopic cover 91, the second telescopic cover 92 and the third telescopic cover 93 are respectively in sealing connection with the first supporting claw 711, the second supporting claw 721 and the third supporting claw 731, and one ends of the first telescopic cover 91, the second telescopic cover 92 and the third telescopic cover 93, which are far away from the first supporting claw 711, the second supporting claw 721 and the third supporting claw 731, are respectively in sealing connection with the workbench 1. The first, second, and third telescoping hoods 91, 92, and 93 can be extended and contracted according to the lifting and lowering of the first, second, and third transmission rods 712, 722, and 732, respectively, and can prevent contamination caused by diffusion of chemical gas, chemical liquid, and the like through gaps formed between the first, second, and third transmission rods 712, 722, and 732, respectively, and the table 1.
It should be noted that, in the wafer etching process, three or more chemical liquids are often involved, and since different chemical liquids need to be recovered respectively, the semiconductor etching apparatus controls the lifting of the first separation cover 22, the second separation cover 23 and the outer cover 24 to enable the chemical liquids to selectively enter the first collection chamber 214, the second collection chamber 227 and the third collection chamber 236, and drain the chemical liquids through the drain pipes (i.e., the first drain pipe, the second drain pipe and the third drain pipe) respectively, so as to avoid mixing between the different chemical liquids. When more than three kinds of chemical liquids are involved, the second partition cover 23 and the number of corresponding lifting mechanisms can be added, and the working modes are consistent.
The above list of detailed descriptions is only specific to practical embodiments of the present invention, and they are not intended to limit the scope of the present invention, and all equivalent embodiments or modifications that do not depart from the spirit of the present invention should be included in the scope of the present invention.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present disclosure describes embodiments, not every embodiment is provided with a separate embodiment, and that this description is provided for clarity only, and that the disclosure is not limited to the embodiments described in detail below, and that the embodiments described in the examples may be combined as appropriate to form other embodiments that will be apparent to those skilled in the art.
Claims (11)
1. A semiconductor etching apparatus, comprising: a table, a cavity assembly arranged on the table, a liquid spraying assembly arranged on the table and formed on the outer side of the cavity assembly along the circumference, and a bearing assembly penetrating the table and extending into the cavity assembly along the axial direction;
the cavity assembly includes: the recovery cavity and the fixed cover are covered on the recovery cavity and are enclosed with the recovery cavity to form an air collection cavity;
the recycling cavity includes: the cavity bottom structure is coaxially arranged on a first separation cover at the outer side of the cavity bottom structure, a plurality of second separation covers sleeved on the first separation cover are sequentially formed outwards along the radial direction of the first separation cover, an outer cover body coaxially sleeved on the second separation cover, and an air guide passage communicated with the air collection cavity for air circulation in the recovery cavity;
the air guide passage includes: a first air guide passage formed between the first partition cover and the cavity bottom structure;
the cavity bottom structure comprises: the inner edge of the cavity base extends upwards along the vertical direction to form an inner annular partition plate, the outer edge of the cavity base extends upwards along the vertical direction to form an outer annular partition plate, and a first collecting cavity is formed between the inner annular partition plate and the outer annular partition plate;
The first partition cover includes: the first annular cover body extends upwards along the vertical direction to form a first annular coaming, the first annular coaming has an extending trend close to the central axis of the recovery cavity, the first annular cover body sequentially extends inwards in an inclined manner along the radial direction to form a guide plate and a first partition plate formed by vertical downward extension, the bottom end of the first annular cover body sequentially extends outwards horizontally along the radial direction to form a first connecting part and a second partition plate formed by vertical upward extension, and a second collecting cavity is formed between the first annular cover body and the second partition plate;
the first partition plate and the first annular cover body form a first annular area for accommodating at least part of the outer annular partition plate, and the first partition plate at least partially extends into the first collecting cavity to form a circuitous first air guide passage for enabling air in the first collecting cavity to circulate to the air collecting cavity.
2. The semiconductor etching apparatus according to claim 1, wherein the gas guide path comprises:
a second air guide passage formed between the first partition cover and the second partition cover, and a third air guide passage formed between the second partition cover and the outer cover.
3. The semiconductor etching apparatus according to claim 2, wherein the second partition cover comprises:
the second annular cover body extends upwards along the vertical direction to form a second annular coaming, the second annular coaming has an extending trend close to the central axis of the recovery cavity, the second annular coaming extends downwards along the vertical direction to form a third partition plate, the bottom end of the second annular cover body sequentially extends outwards horizontally along the radial direction to form a second connecting part, a fourth partition plate extends upwards vertically to form a fourth partition plate, and a third collecting cavity is formed between the second annular cover body and the fourth partition plate;
the second annular cover body and the third partition plate form a second annular area for accommodating at least part of the second partition plate, and the third partition plate at least partially extends into the second collecting cavity to form a circuitous second air guide passage for enabling air in the second collecting cavity to circulate into the air collecting cavity.
4. A semiconductor etching apparatus according to claim 3, wherein the housing body comprises:
the third annular cover body extends upwards along the vertical direction to form a third annular coaming, the third annular coaming has an extending trend close to the central axis of the recovery cavity, and the third annular coaming extends downwards along the vertical direction to form a fifth partition plate;
And a third annular region for accommodating at least part of the fourth partition plate is formed between the third annular cover body and the fifth partition plate, and the fifth partition plate at least partially extends into the third collecting cavity to form a circuitous third air guide passage for enabling air in the third collecting cavity to circulate into the air collecting cavity.
5. A semiconductor etching apparatus according to claim 3, wherein an extending trend of an outer peripheral surface of the first annular enclosure plate matches an extending trend of an inner peripheral surface of the second annular enclosure plate, the outer peripheral surface of the first annular enclosure plate being at least partially fitted to the inner peripheral surface of the second annular enclosure plate.
6. The semiconductor etching apparatus according to claim 4, wherein an extending trend of an outer peripheral surface of the second annular surrounding plate matches an extending trend of an inner peripheral surface of the third annular surrounding plate, the outer peripheral surface of the second annular surrounding plate being at least partially fitted to the inner peripheral surface of the third annular surrounding plate.
7. The semiconductor etching apparatus according to claim 4, wherein an inner edge of the first annular enclosure plate is configured as an annular liquid-guiding portion, and an inner edge of the second annular enclosure plate is configured as an annular liquid-blocking portion having a downward extending tendency in a vertical direction and matching the annular liquid-guiding portion, the annular liquid-blocking portion being fitted with the annular liquid-guiding portion;
The inner edge of the third annular coaming is configured to have an annular liquid blocking portion which extends downwards along the vertical direction and is matched with the annular liquid blocking portion, and the annular liquid blocking portion is attached to the annular liquid blocking portion.
8. The semiconductor etching apparatus of claim 3, wherein the chamber assembly further comprises: the central cavity structure is coaxially arranged in the recovery cavity;
the central cavity structure comprises: the device comprises a supporting table, a supporting block axially arranged on the supporting table, an annular connecting seat axially nested in the supporting block, a sealing ring arranged on the annular connecting seat and circumferentially propping against the inner annular partition plate, and an annular guide plate coaxially sleeved on the annular connecting seat and used for guiding liquid to enter the first collecting cavity.
9. The semiconductor etching apparatus according to claim 8, further comprising: the lifting assembly is formed at the bottom of the workbench;
the lifting assembly includes: and the lifting mechanism is used for independently driving the first separation cover, the second separation cover and the outer cover body to lift along the vertical direction so as to form a process cavity.
10. The semiconductor etching apparatus of claim 9, wherein the process chamber comprises:
The lifting mechanism drives the first separation cover, the second separation cover and the outer cover body to rise along the vertical direction, and a first process cavity which is formed between the first separation cover and the central cavity structure and is communicated with the first collecting cavity is formed;
the lifting mechanism drives the second separation cover and the outer cover body to rise along the vertical direction, and a second process cavity is formed between the first separation cover and the second separation cover and communicated with the second collecting cavity;
the lifting mechanism drives the outer cover body to lift along the vertical direction, and a third process cavity which is formed between the second separation cover and the outer cover body and communicated with the third collecting cavity is formed.
11. The semiconductor etching apparatus of claim 9, wherein the spray assembly comprises: a plurality of rotary swing arms provided with nozzles;
the support assembly comprises: the tray is arranged at the output end of the transmission motor and driven by the transmission motor, and a lifting unit for supporting the tray to lift.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310432502.0A CN116174435B (en) | 2023-04-21 | 2023-04-21 | Semiconductor etching equipment |
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| CN202310432502.0A CN116174435B (en) | 2023-04-21 | 2023-04-21 | Semiconductor etching equipment |
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| US20220108908A1 (en) * | 2020-10-06 | 2022-04-07 | Applied Materials, Inc. | Shadow ring kit for plasma etch wafer singulation process |
| CN114446815A (en) * | 2020-10-30 | 2022-05-06 | 辛耘企业股份有限公司 | Wafer etching device |
| CN112736017B (en) * | 2020-12-30 | 2023-03-24 | 上海至纯洁净系统科技股份有限公司 | Mechanism for cleaning back of single wafer and using method thereof |
| CN112736018B (en) * | 2020-12-30 | 2023-03-14 | 上海至纯洁净系统科技股份有限公司 | Single wafer cleaning system |
| CN112792036B (en) * | 2020-12-31 | 2022-12-20 | 至微半导体(上海)有限公司 | System and method for recycling wafer cleaning solution in semiconductor wet process |
| CN112735988B (en) * | 2020-12-31 | 2022-12-20 | 至微半导体(上海)有限公司 | Composite cavity ultrashort stroke staggered control method for wafer cleaning equipment |
| CN114798647A (en) * | 2022-05-13 | 2022-07-29 | 创微微电子(常州)有限公司 | Lifting structure, single-wafer cleaning mechanism, method and equipment |
| CN114951193B (en) * | 2022-07-29 | 2023-05-09 | 常州捷佳创精密机械有限公司 | Wafer cleaning equipment and liquid supply method |
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