CN116153832A - 用于接合芯片的设备和使用该设备接合芯片的方法 - Google Patents

用于接合芯片的设备和使用该设备接合芯片的方法 Download PDF

Info

Publication number
CN116153832A
CN116153832A CN202211464417.4A CN202211464417A CN116153832A CN 116153832 A CN116153832 A CN 116153832A CN 202211464417 A CN202211464417 A CN 202211464417A CN 116153832 A CN116153832 A CN 116153832A
Authority
CN
China
Prior art keywords
chip
die
bonding
substrate
module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202211464417.4A
Other languages
English (en)
Inventor
崔义选
金熙宰
李敏球
郑亨均
洪允杓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN116153832A publication Critical patent/CN116153832A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67144Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52Mounting semiconductor bodies in containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67721Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/04Mounting of components, e.g. of leadless components
    • H05K13/0404Pick-and-place heads or apparatus, e.g. with jaws
    • H05K13/0408Incorporating a pick-up tool
    • H05K13/0409Sucking devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/07Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L2224/08Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
    • H01L2224/081Disposition
    • H01L2224/0812Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/08151Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/08221Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/753Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301Bonding head
    • H01L2224/75302Shape
    • H01L2224/75303Shape of the pressing surface
    • H01L2224/75304Shape of the pressing surface being curved
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/753Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301Bonding head
    • H01L2224/75312Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757Means for aligning
    • H01L2224/75743Suction holding means
    • H01L2224/75745Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/758Means for moving parts
    • H01L2224/75821Upper part of the bonding apparatus, i.e. bonding head
    • H01L2224/75824Translational mechanism
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/759Means for monitoring the connection process
    • H01L2224/7592Load or pressure adjusting means, e.g. sensors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/80053Bonding environment
    • H01L2224/80091Under pressure
    • H01L2224/80093Transient conditions, e.g. gas-flow
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/8012Aligning
    • H01L2224/80148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/80169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head
    • H01L2224/8018Translational movements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/802Applying energy for connecting
    • H01L2224/80201Compression bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/808Bonding techniques
    • H01L2224/80894Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/80908Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding involving monitoring, e.g. feedback loop
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83053Bonding environment
    • H01L2224/83091Under pressure
    • H01L2224/83093Transient conditions, e.g. gas-flow
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312Aligning
    • H01L2224/83148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/83169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head
    • H01L2224/8318Translational movements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832Applying energy for connecting
    • H01L2224/83201Compression bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83908Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving monitoring, e.g. feedback loop
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/07Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L24/08Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75Apparatus for connecting with bump connectors or layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Wire Bonding (AREA)

Abstract

一种芯片接合设备包括:主体;衬底传送件,其安装在主体上以转移衬底;接合头传送件,其设置在主体的上表面上;对齐单元,其安装在主体上,并且调整衬底的位置和芯片的位置;以及接合头,其安装在接合头传送件中,并且移动以及在其下方附着芯片,其中,接合头设有用于在其下端部中附着芯片的芯片接合单元,其中,芯片接合单元包括:芯片接合单元主体,其具有形成在其中的安装凹槽;推模块,其具有插入安装凹槽中的一个端部;以及附着模块,其具有通过推模块变形的可变形构件;其中,可变形构件设有可变形部分,可变形部分通过被推模块按压而变形,可变形部分的底表面接触芯片,并且对芯片施加力,以将芯片接合至衬底。

Description

用于接合芯片的设备和使用该设备接合芯片的方法
相关申请的交叉引用
本申请要求于2021年11月23日在韩国知识产权局提交的韩国专利申请No.10-2021-0162166的优先权和利益,该申请的发明构思以引用方式并入本文中。
技术领域
本发明构思涉及一种芯片接合设备和用于接合芯片的方法。
背景技术
通常,为了将芯片接合至衬底,在衬底上对齐和处理芯片的处理是必要的。在接合处理中,不使用任何其他介质将芯片接合到衬底,会有必要将平行度管理在100nm内,以控制芯片和衬底之间的平行度来抑制气泡的产生。然而,在实践中,难以管理以高速操作且频繁施加接合负载的晶片接合装置中的平行度。
因此,使用这样的方法:该方法在通过向芯片的中心部分施加负载而使芯片形状变形后将芯片和衬底接合,但在这种情况下,芯片的变形形状不是恒定的,存在这样的问题:当衬底和芯片接触时,芯片可能被损坏。此外,由于当负载直接施加至芯片时芯片变形,因此存在这样的问题:芯片破损的风险增加。
因此,需要开发一种能够在防止芯片和衬底之间产生气泡的同时防止芯片破损的装置。
发明内容
本发明构思的一方面是提供一种能够防止芯片破损的用于接合芯片的芯片接合设备和制造方法。
本发明构思的一方面是提供一种能够防止在芯片和衬底之间产生气泡的用于接合芯片的芯片接合设备和制造方法。
根据本发明构思的一方面,一种芯片接合设备包括:主体;衬底传送件,其安装在主体上以转移衬底;接合头传送件,其设置在主体的上表面上;对齐单元,其安装在主体上,被配置为调整衬底的位置和芯片的位置;以及接合头,其安装在接合头传送件中,并且移动以在其下方附着芯片,其中,接合头设有用于以在其下方附着芯片的芯片接合单元,其中芯片接合单元包括:芯片接合单元主体,其具有形成在其中的安装凹槽;推模块,其具有插入安装凹槽中的一个端部;
以及附着模块,其具有通过推模块可变形的可变形构件;其中可变形构件设有可变形部分,可变形部分通过被推模块按压而变形,可变形部分的底表面接触芯片,并且对芯片施加力,以将芯片接合至衬底。
根据本发明构思的一方面,一种用于接合芯片的方法包括:确定设置在可变形构件中的可变形部分与芯片是否接触;在通过位移传感器检测可变形部分的变形度的同时控制芯片的变形度;确定芯片与衬底是否接触;以及在控制驱动推模块的致动器和接合头的Z轴驱动器的同时将芯片的各部分顺序地接合至衬底,使得施加至芯片的负载在顺序接合处理中保持恒定。
附图说明
本发明构思的以上和其它方面、特征和优点将从下面结合附图的详细描述中更清楚地理解,在附图中:
图1是示出根据示例实施例的包括芯片接合设备的晶片接合装置的框图;
图2是用于示出根据示例性实施例的设置在晶片接合装置中的芯片分离模块的操作的说明图;
图3是示出根据示例实施例的芯片接合设备的示意性侧视图;
图4是示出根据示例实施例的芯片接合设备的接合头的示意性配置图;
图5是示出图4的芯片接合单元的示意性剖视图;以及
图6至图12是用于示出接合头的操作的说明图。
具体实施方式
下文中,将参照附图描述本发明构思的优选示例实施例。
图1是示出根据示例实施例的包括芯片接合设备的晶片接合装置10的框图。
参照图1,晶片接合装置10可包括芯片和衬底供应模块20、芯片分离模块30、芯片转移模块40和芯片接合设备100。
芯片和衬底供应模块20可包括设备前端模块(EFEM)或负载端口模块(LPM),并且用于将衬底从衬底储存单元21取出,并且将其供应至芯片接合设备100,并且将芯片从芯片储存单元22供应至芯片分离模块30。例如,衬底储存单元21可为300mm前开式统一吊舱(FOUP)或者前开口装运箱(FOSB)。另外,芯片储存单元22可为400mm FOUP(前开式统一吊舱)或者存储附着于环框架的芯片的多应用载体(MAC)。
芯片分离模块30是扩张膜使得芯片可容易从环框架的膜31(见图2)拆卸的装置,并且包括在物理上向上推芯片102使得其与膜31脱离的推出器33(见图2)。这里,简单参照关于图2的芯片分离模块30的操作,首先,上面附着有芯片102的膜31在扩张器中扩张,使得芯片102在良好状态下下从膜31拆卸。此后,在推出器33对齐并且布置在芯片102下方之后,膜31和芯片102被向上推。在这种情况下,芯片与膜之间的附着面积减小,从而芯片102容易与膜分离。此后,芯片转移模块40(见图1)的拾取装置42将通过推出器33向上推的芯片102与膜31分离,然后将其转移至芯片接合设备100
(见图1)。在这种情况下,拾取装置42可将芯片102按照其在与膜31分离的状态下的样子转移至芯片接合设备100,或者可将芯片102颠倒转移。
返回参照图1,芯片转移模块40用于将在芯片分离模块30中与膜31分离的芯片102(参照图2)转移至芯片接合设备100。这样,芯片转移模块40可包括如图2所示的拾取装置42。芯片转移模块40可设置在芯片分离模块30和芯片接合设备100的一侧上。另外,芯片转移模块40可用于将移除了芯片102(见图2)的膜31(见图2)排出至晶片接合装置10外部的位置。
芯片接合设备100邻近于芯片转移模块40设置,并且将芯片102(参照图2)接合至衬底104(见图3)。
图3是示出根据示例实施例的芯片接合设备100的示意性侧视图。
参照图3,例如,根据示例实施例的芯片接合设备100可包括主体110、衬底传送件120、接合头传送件130、对齐单元140和接合头150。
例如,主体110具有设置在其上表面上的接合头传送件130。另外,主体110可为框架,在框架中,衬底传送件120设置在通过主体110形成(或限定)的内空间中(例如,在其周围形成框架的空间)。例如,主体110可包括其中安装有接合头传送件130的上框架112和其中衬底传送件120设置在其间的柱框架114。然而,本发明构思不限于此,并且主体110的形状可不同地改变。另外,主体110还可包括下框架116,柱框架114从下框架116向上延伸。
衬底传送件120用于将由上述芯片和衬底供应模块20(参照图1)供应的衬底104转移至其将要接合至芯片(图3中未示出的芯片)的位置。例如,衬底传送件120可设置在主体110的柱框架114之间。衬底传送件120在X轴方向(垂直于图3的纸面)上移动衬底104。例如,当芯片与衬底104的接合完成时,衬底传送件120可将其上堆叠有芯片的衬底104转移至芯片和衬底供应模块20(参照图1),并且芯片和衬底供应模块20可利用负载端口模块(LPM)被排出至晶片接合装置10外部的位置。
接合头传送件130安装在主体110的上框架112上,以在图3的Y轴方向上沿着上框架112移动接合头150。例如,接合头传送件130可包括沿着上框架112的轨道112a移动的第一移动框架132。另外,接合头150可安装在接合头传送件130的第一移动框架132上,以与第一移动框架132相关联地移动。接合头传送件130可包括生成用于第一移动框架132的移动的驱动力的驱动器(未示出)。
对齐单元140用于确认芯片和衬底对齐的位置。例如,对齐单元140可包括用于调整衬底的位置的第一对齐单元142以及用于调整芯片102(未示出)的位置的第二对齐单元144。第一对齐单元142可安装在以可移动方式安装在主体110的上框架112中的第二移动框架142a中。第一对齐单元142的第一对齐检测构件142b可安装在第二移动框架142a中,以与第二移动框架142a一起移动,以检测设置在其下方的衬底的位置。同时,在当前示例实施例中,将第二移动框架142a被配置为与第一移动框架132分离的情况作为示例描述,但是本发明构思不限于此,第二移动框架142a和第一移动框架132可一体地形成,并且可彼此关联地移动。
第二对齐单元144可安装在设置在主体110下方的下框架116中,以设置在接合头150的移动路径上。例如,第二对齐单元144可包括第二对齐检测构件144a和其上安装有第二对齐检测构件144a的固定构件144b,第二对齐检测构件144a的数量等于接合头150的数量。例如,图3示出了设置一个接合头150和第二对齐检测构件144a作为示例的情况,但是本发明构思不限于此,接合头150和第二对齐检测构件144a可设置为多个。
接合头150安装在第一移动框架132上,并且与第一移动框架132一起移动。例如,多个接合头150可安装在第一移动框架132中。稍后将描述接合头150的更多细节。
图4是示出根据示例实施例的芯片接合设备100的接合头的示意性配置图。
参照图4,作为示例,根据示例实施例的接合头150可包括θ轴驱动器152、Z轴驱动器154、倾斜调整驱动器156和芯片接合单元160。
接合头150在由芯片接合单元160保持住芯片的状态下通过接合头传送件130(参照图3)设置在衬底上方。此后,接合头150通过设置在接合头150中的Z轴驱动器154在Z轴方向(参照图3)上转移芯片。随着芯片靠近与衬底的接合位置,接合头150通过经θ轴驱动器152调整θ轴来校正位置错误。θ指在X-Y面中的旋转分量。此后,通过倾斜调整驱动器156(可包括空气陀螺仪)调整芯片与衬底之间的平行度,倾斜调整驱动器156可由以可操作的方式连接至倾斜调整驱动器156的控制器(未示出)自动调整,以控制其执行这种平行度调整。这种平行度调整可用于减小芯片与衬底的表面之间的任何角度。例如,当芯片和衬底的相对的表面是平面时,平行度调整可减小这些表面之间的角度。
芯片接合单元160构成接合头150的下端部,芯片102保持在芯片接合单元160的底表面上。图5是示出图4的芯片接合单元的示意性剖视图。例如,根据示例实施例的芯片接合单元160可包括芯片接合单元主体162、推模块170和附着模块180。
芯片接合单元主体162可设有用于供应吸力使得芯片102附着于附着模块180并通过附着模块180保持的芯片附着通道162a。另外,真空流动通道162b可设置在芯片接合单元主体162中,以将附着模块180附着于芯片接合单元主体162。芯片接合单元主体162的下表面中的抽吸凹槽162b’可与真空流动通道162b连通(图5的剖视图中未示出),以提供遍及附着模块180的上表面的吸力。附着模块180可通过由固定的真空流动通道162b提供的吸力固定地安装在芯片接合单元主体162上。芯片接合单元主体162可设有其中安装有推模块170的安装凹槽162c,并且推模块170的一部分可插入安装凹槽162c中。在该示例实施例中,作为示例,描述了附着模块180通过真空抽吸方法固定地安装至芯片接合单元主体162的情况,但是其示例实施例不限于此,并且芯片接合单元主体162和附着模块180可通过磁铁以磁力彼此结合。此外,芯片接合单元主体162和附着模块180可通过螺纹紧固固定。
例如,推模块170可包括致动器172、设置在致动器172下方的接触检测传感器174、和设置在接触检测传感器174下方的推构件176。致动器172可设有用于检测推构件176的位移的位移传感器178。致动器172用于升高推构件176,使得推构件176按压稍后描述的附着模块180的可变形构件184。接触检测传感器174可通过检测施加至推构件176的负载来检测可变形构件184和芯片102是否接触。另外,接触检测传感器174可检测施加至推构件176的负载,以检测芯片102和衬底104是否接触。此外,接触检测传感器174也可检测芯片102和衬底104是否以恒定负载接触。
位移传感器178用于当可变形构件184变形时并且当芯片102和衬底104接合时检测推构件176的位移。换句话说,控制器(未示出)通过关于位移传感器178所感测的推构件176的位移的信号控制可变形构件184的变形度,使得可变形构件184变形,此外,芯片102和衬底104彼此接合。
例如,推构件176的下端部可具有半球形。然而,本发明构思不限于此,并且推构件176的下端部可具有三角形截面或‘+’形截面。也就是说,可将推构件176的下端部的形状改变为能够在首先接触稍后描述的可变形构件184的中心部分中的推构件176之后顺序地在边缘处接触的任何形状。
附着模块180可设有:具有开口182a的附着模块主体182,推构件176插入开口182a中;以及可变形构件184,其安装在附着模块主体182中并且具有通过推构件176变形的可变形部分184a。附着模块主体182可包括与芯片接合单元主体162的芯片附着通道162a连通(例如,连接至芯片接合单元主体162的芯片附着通道162a)的延伸通道182b,使得延伸通道182b为芯片102提供吸力。因此,芯片102可耦接至附着模块180。可变形构件184可具有带敞开的上端部的柱形(即,呈圆柱杯形),并且可变形构件184的可变形部分184a可由可通过推构件176变形的弹性材料形成。例如,可变形构件184可由铝或钢(诸如不锈钢)制成。可变形部分184a的厚度可大于芯片102的厚度。
下文中,将参照附图更详细地描述接合头的操作。
图6至图12是用于示出接合头的操作的说明图。
此后,如图6所示,推构件176通过致动器172降低,从而推构件176与设置在附着模块180中的可变形构件184的可变形部分184a接触。在这种情况下,接触检测传感器174检测可变形构件184的可变形部分184a与推构件176之间的接触。
此后,如图7所示,推构件176通过致动器172持续降低,因此,可变形构件184的可变形部分184a变形为凸形(向下突出)。因此,附着于可变形构件184的底表面的芯片102也与可变形部分184a一起变形,并且也可包括在芯片102的中心部分中的凸形(向下突出)。例如,位于芯片102的中心的底表面可为芯片的最下面的部分。在这种情况下,在通过关于位移传感器178所检测的推构件176的位移的信息控制变形度的同时,执行由致动器172进行的可变形部分184a的变形。
此后,首先,将芯片102附着于其芯片接合单元160(参照图4)的接合头150通过衬底传送件120(在X轴方向上移动衬底)和接合头传送件130(将接合头150与同其附着的芯片102在Y方向上移动)直接布置在衬底104的上部上方(参照图3)。通过直接位于衬底104上方的接合头150和附着的芯片102,设置在接合头150中的芯片接合单元160通过Z轴驱动器154(参照图4)在Z轴方向(参照图3)上转移芯片102。随着芯片102到达与衬底的接合位置,接合头150通过经θ轴驱动器152(参照图4)调整θ轴来校正任何位置错误。然后(或者同时,或就在之前),控制器通过倾斜调整驱动器(参照图4)调整芯片102与衬底104之间的平行度。
此后,如图8所示,芯片102和衬底104通过设置在接合头150中的Z轴驱动器154(见图4)((在Z轴方向上)向下移动接合头150和附着的芯片102)变得接触。在这种情况下,接触检测传感器174检测芯片102与衬底104之间的接触。
此后,如图9所示,接合头150凭借设置在接合头150中的Z轴驱动器154(见图4)继续在Z轴方向(见图3)上向下移动。结果,施加在衬底104与接合头150/芯片102之间的力增大,这个力通过接触检测传感器174施加和检测。当该负载增大至预定目标水平时,推构件176通过致动器172升高,使得相同负载保持在芯片102与衬底104之间。
图10示出了升高推构件176。也可通过关于位移传感器178所检测的推构件176的位移的信息和关于由接合头150进行的推构件176在Z轴方向上的向下的位移的信息执行升高推构件176。例如,在负载达到预定目标水平(如由接触检测传感器174检测的那样)后,推构件176可在接合头150内(例如,相对于其余部分接合头150)升高至(相对于接合头150的其余部分)由接合头150的向下位移确定的位置(例如,在负载到达预定目标水平之后,推构件176的增大的高度(相对于接合头150的其余部分,诸如相对于芯片接合单元主体162和附着模块180)是接合头150的减小的高度的函数)。应该理解,在该操作期间,在接合头150和芯片接合单元160的(除推构件176之外的)部分继续向下运动的同时,推构件176可相对于衬底104保持其位置,因此,在芯片102的边缘和外侧继续向下移动的同时,芯片102的中心可相对于衬底104保持其位置。可执行推构件176的升高和接合头150的降低,以增大芯片102与衬底104之间的接触面积。
此后,如图11所示,接合头150通过设置在接合头150中的Z轴驱动器154(见图4)继续向下移动,同时,致动器172将推构件176(例如,相对于接合头150的其余部分)升高,直至芯片102的(例如,芯片102的相对的边缘之间的)整个底表面接触衬底104为止。因此,芯片102从芯片102的中心部分向外顺序地接合至衬底104,直至芯片102的边缘接合至衬底104。如上所述,由于芯片102和衬底104从芯片102的中心部分顺序地接合至衬底104直至芯片102的边缘接合至衬底104,因此在芯片102与衬底104之间可不产生和俘获气泡。
此后,如图12所示,随着接合头150通过设置在接合头150(见图4)中的Z轴驱动器154在Z轴方向上向上运动,芯片102与衬底104的接合处理完成。
如上所述,通过将可变形构件184的可变形部分184a变形以将芯片102和衬底104接合,可防止将过量负载密集地施加至芯片102。因此,可降低破坏芯片102的风险。
此外,通过凭借关于位移传感器178所感测的推构件176的位移的信息控制施加至可变形部分184a的负载,芯片102和衬底104彼此接合,从而可进一步降低破坏芯片102的风险。
此外,通过从芯片102的中心部分向外至芯片102的边缘顺序地使衬底104和芯片102接触,可防止在芯片102与衬底104之间生成气泡。
如上所述,根据本发明构思的示例实施例,可提供能够防止芯片破损或降低芯片破损的风险的芯片接合设备和用该设备接合芯片的方法。
另外,可提供能够防止在芯片与衬底之间生成气泡的芯片接合设备和用该设备接合芯片的方法。
如本文所用,参照衬底104使用方向性说明(例如,“上”、“下”、“向下”等),以帮助描述相对位置和运动。然而,为了解释方便而阐述这些方向,并且应该理解,不要求相对于芯片接合设备的真实世界操作环境的特定取向或运动。
描述中组件与另一组件的“连接”的含义包括通过粘合层的间接连接以及两个组件之间的直接连接。应当理解,芯片102可以在没有粘合层的情况下接合至衬底104上,但所公开的实施例也可以通过在芯片102与衬底104之间使用粘合层来将芯片102附着于衬底104。除非上下文另有说明,否则应理解,当用序数词(如“第一”和“第二”)来指代某个元件时,该元件不受此限制,并且此类序数词仅用于将一个元件与其他类似元件区分开来。由于序数词的使用通常按顺序引入,因此可能会出现使用不同序数词引用同一元件的情况,例如,“第一”元件(例如,在说明书中)可能在其他地方(例如,说明书的另一部分或权利要求中)被称为“第二”元件。
本文使用的术语“示例实施例”在整个公开中不一定参照同一示例实施例,并且可用于强调一个示例实施例中的与另一示例实施例不同的特定特征或特性。另外,本文提供的示例实施例的特征和特性应该被理解为能够通过彼此整个或部分地组合来实施。例如,除非上下文另有说明,否则在特定示例实施例中所述的一个元件,即使其在另一示例实施例中未明确描述,也可理解为是与另一示例实施例相关的描述。
此处使用的术语仅用于描述示例实施例,而不是限制本发明。此外,除非上下文另有说明,否则单数形式应理解为适用于复数形式。
虽然上面已经示出并描述了示例性实施例,但对于本领域技术人员来说显而易见的是,可以在不偏离所附权利要求所定义的本发明构思的范围的情况下进行修改和变型。

Claims (21)

1.一种芯片接合设备,包括:
主体;
衬底传送件,其安装在所述主体上以转移衬底;
接合头传送件,其设置在所述主体的上表面上;
对齐单元,其安装在所述主体上,被配置为调整所述衬底的位置和芯片的位置;以及
接合头,其附着于所述接合头传送件以移动其下方附着的所述芯片,
其中,所述接合头设有用于附着所述芯片的芯片接合单元,所述芯片接合单元包括:
芯片接合单元主体,其具有形成在其中的安装凹槽;
推模块,其具有插入所述安装凹槽中的一个端部;以及
附着模块,其具有设有可变形部分的可变形构件,所述可变形部分由于所述推模块施加的压强而能够变形,所述可变形部分具有被配置为当所述芯片附着于所述芯片接合单元时接触所述芯片的底表面。
2.根据权利要求1所述的芯片接合设备,其中,所述推模块包括:
插入所述安装凹槽中的致动器;
连接至所述致动器的接触检测传感器;以及
连接至所述致动器的推构件,
其中,所述致动器被配置为升高和降低所述推构件,以分别减小和增大所述可变形构件的变形。
3.根据权利要求2所述的芯片接合设备,其中,所述推模块还包括检测所述推构件的位移的位移传感器。
4.根据权利要求2所述的芯片接合设备,其中,所述接触检测传感器被配置为检测所述推构件与所述可变形构件之间的接触。
5.根据权利要求2所述的芯片接合设备,其中,所述推构件具有凸形底表面。
6.根据权利要求1所述的芯片接合设备,其中,所述附着模块包括具有开口的附着模块主体,所述推模块的第二端部插入所述开口中,并且所述可变形构件插入所述附着模块主体中并且设有通过所述推模块能够变形的所述可变形部分。
7.根据权利要求6所述的芯片接合设备,其中,所述可变形构件由弹性材料制成。
8.根据权利要求7所述的芯片接合设备,其中,所述可变形构件的弹性材料是铝或不锈钢。
9.根据权利要求1所述的芯片接合设备,其中,所述芯片接合单元主体设有芯片附着流动通道,所述芯片附着流动通道用于供应吸力使得芯片附着于所述附着模块。
10.根据权利要求9所述的芯片接合设备,其中,所述附着模块包括具有开口的附着模块主体,所述推模块的第二端部插入所述开口中,
所述附着模块主体设有与所述芯片附着流动通道连通的延伸流动通道。
11.根据权利要求1所述的芯片接合设备,其中,所述芯片接合单元主体设有真空流动通道,所述真空流动通道提供用于将所述附着模块附着于所述芯片接合单元主体的真空力。
12.根据权利要求1所述的芯片接合设备,其中,所述接合头包括用于在水平面中旋转所述芯片的θ轴驱动器、用于在竖直方向上升高和降低所述接合头的Z轴驱动器、以及被配置为调整所述芯片与所述衬底之间的平行度的倾斜调整驱动器。
13.根据权利要求12所述的芯片接合设备,其中,所述倾斜调整驱动器包括空气陀螺仪。
14.根据权利要求1所述的芯片接合设备,其中,所述可变形部分的厚度比所述芯片的厚度更厚。
15.一种芯片接合设备,包括:
主体;
衬底传送件,其安装在所述主体上以转移衬底;
接合头传送件,其设置在所述主体的上表面上;
对齐单元,其安装在所述主体上,被配置为调整所述衬底的位置和芯片的位置;以及
接合头,其附着于所述接合头传送件以移动其下方附着的所述芯片,
其中,所述接合头设有用于附着所述芯片的芯片接合单元,所述芯片接合单元包括:
芯片接合单元主体,其具有形成在其中的安装凹槽;
推模块,其具有插入所述安装凹槽中的一个端部;以及
附着模块,其具有设有可变形部分的可变形构件,所述可变形部分由于所述推模块施加的压强而能够变形,
其中,所述接合头包括用于在水平面中旋转所述芯片的θ轴驱动器、用于在竖直方向上升高和降低所述接合头的Z轴驱动器、以及被配置为调整所述芯片与所述衬底之间的平行度的倾斜调整驱动器,
其中,在控制驱动推模块的致动器和接合头的Z轴驱动器的同时,将所述芯片的多个部分顺序地接合至所述衬底,使得施加至所述芯片的负载在顺序接合期间保持恒定。
16.根据权利要求15所述的芯片接合设备,其中,在通过经所述位移传感器检测所述推模块的推构件的位移来控制所述芯片的变形度的同时执行接合。
17.根据权利要求16所述的芯片接合设备,其中,所述推构件被驱动为:在当所述接合头降低时被所述致动器相对于所述接合头的其它部分逐渐升高的同时,将所述芯片的所述多个部分从所述芯片的中心部分至所述芯片的边缘顺序地接合至所述衬底。
18.根据权利要求15所述的芯片接合设备,其中,在所述芯片和所述衬底接触之前,所述接合头的芯片接合单元通过所述Z轴驱动器朝着所述衬底降低。
19.根据权利要求15所述的芯片接合设备,其中,通过所述可变形构件的可变形部分的变形使所述芯片变形。
20.根据权利要求19所述的芯片接合设备,其中,所述可变形构件的可变形部分由弹性材料形成。
21.根据权利要求20所述的芯片接合设备,
其中,所述推模块设有用于按压所述可变形构件的推构件,并且
其中,所述推构件具有凸形底表面。
CN202211464417.4A 2021-11-23 2022-11-22 用于接合芯片的设备和使用该设备接合芯片的方法 Pending CN116153832A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020210162166A KR20230075706A (ko) 2021-11-23 2021-11-23 칩 본딩 장치 및 칩 본딩 방법
KR10-2021-0162166 2021-11-23

Publications (1)

Publication Number Publication Date
CN116153832A true CN116153832A (zh) 2023-05-23

Family

ID=86353302

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211464417.4A Pending CN116153832A (zh) 2021-11-23 2022-11-22 用于接合芯片的设备和使用该设备接合芯片的方法

Country Status (3)

Country Link
US (1) US20230163094A1 (zh)
KR (1) KR20230075706A (zh)
CN (1) CN116153832A (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12009337B2 (en) * 2021-07-30 2024-06-11 Taiwan Semiconductor Manufacturing Company Ltd. Bonding tool and bonding method thereof

Also Published As

Publication number Publication date
US20230163094A1 (en) 2023-05-25
KR20230075706A (ko) 2023-05-31

Similar Documents

Publication Publication Date Title
KR101489054B1 (ko) 다이본더 및 픽업 방법 및 픽업 장치
EP1535312B1 (en) Method and apparatus for picking up semiconductor chip and suction and exfoliation tool up therefor
KR101731537B1 (ko) 임시 접합 웨이퍼 디본딩장치 및 방법
TWI734030B (zh) 半導體製造裝置及半導體裝置之製造方法
CN110690138A (zh) 晶圆键合设备以及使用其的晶圆键合系统
TW201732961A (zh) 黏晶裝置及半導體裝置的製造方法
KR20170121133A (ko) 본딩 장치 및 본딩 방법
CN116153832A (zh) 用于接合芯片的设备和使用该设备接合芯片的方法
TWI714217B (zh) 晶粒接合裝置及半導體裝置之製造方法
JP4978505B2 (ja) 接合装置および製造方法
CN111834276A (zh) 裸芯顶出器及包含其的裸芯拾取装置
US20220102185A1 (en) Semiconductor manufacturing apparatus including bonding head
JP4136692B2 (ja) ペレット搬送装置、ペレットボンディング方法およびペレットボンディング装置
JPH05208390A (ja) 吸着ノズル
KR102534445B1 (ko) 다이 본딩 장치 및 반도체 장치의 제조 방법
KR20070047575A (ko) 다이 본딩 장치
KR20210029413A (ko) 다이 본딩 장치
JP7317354B2 (ja) 実装装置
KR102386337B1 (ko) 다이 이송 모듈 및 이를 포함하는 다이 본딩 장치
KR102350557B1 (ko) 다이 본딩 방법 및 다이 본딩 장치
KR102316940B1 (ko) 다이 이송 모듈 및 이를 포함하는 다이 본딩 장치
JP4622460B2 (ja) 電子部品実装方法及び装置
KR102221704B1 (ko) 진공 피커 및 이를 포함하는 다이 본딩 장치
KR102288925B1 (ko) 본딩 툴 정렬 모듈 및 이를 포함하는 다이 본딩 장치
US20240186174A1 (en) Apparatus for manufacturing semiconductor devices and method of manufacturing semiconductor devices

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication