CN116137303A

CN116137303A - LED chip manufacturing method and LED chip

Info

Publication number: CN116137303A
Application number: CN202111355614.8A
Authority: CN
Inventors: 庄文荣; 孙明; 卢敬权; 卢旺; 叶国辉
Original assignee: Dongguan HCP Technology Co Ltd
Current assignee: Dongguan HCP Technology Co Ltd
Priority date: 2021-11-16
Filing date: 2021-11-16
Publication date: 2023-05-19

Abstract

The application provides an LED chip manufacturing method and an LED chip, wherein the method comprises the following steps: providing a light-emitting chip; a plurality of grooves or a plurality of columns are arranged on the surface of the light-emitting chip at intervals; the color conversion layer is filled in the plurality of grooves or between the plurality of columns, and is used for changing the color of the light emitted by the light emitting chip, so that the light with different color from the light emitted by the light emitting chip is obtained.

Description

LED chip manufacturing method and LED chip

Technical Field

The application relates to the technical field of display, in particular to a manufacturing method of an LED chip and the LED chip.

Background

The LED chip has better energy-saving effect and higher brightness, and is used in various industries of production and life.

In the prior art, the LED chip usually uses gallium nitride as a substrate, and the chip using gallium nitride as the substrate can only emit blue light and green light, but can not emit light of other colors, and can not meet the production requirement.

Disclosure of Invention

An object of the present application is to solve the problem of limited kinds of light emitting colors of LED chips in the prior art.

In order to solve the above problems, the present application provides a method for manufacturing an LED chip, including: providing a light-emitting chip; a plurality of grooves or a plurality of columns are arranged on the surface of the light-emitting chip at intervals; and filling a color conversion layer in the grooves or filling a color conversion layer between the columns, wherein the color conversion layer is used for changing the color of light emitted by the light emitting chip.

To solve the above problems, the present application provides an LED chip manufacturing apparatus, including: a providing module configured to: providing a light-emitting chip; a setting module configured to: a plurality of grooves or a plurality of columns are arranged on the surface of the light-emitting chip at intervals; a fill module configured to: and filling a color conversion layer in the grooves or filling a color conversion layer between the columns, wherein the color conversion layer is used for changing the color of light emitted by the light emitting chip.

In one embodiment of the present application, based on the foregoing scheme, the light emitting chip includes: the light-emitting surface and the connecting surface are oppositely arranged, and the side surface is arranged between the light-emitting surface and the connecting surface; the setting module is configured to: the light-emitting surface is provided with a plurality of columns or a plurality of grooves; or a plurality of posts or a plurality of grooves are also arranged on the connecting surface and/or the side surface; the filling module is configured to: filling a color conversion layer in a groove of the light-emitting surface or among a plurality of columns; or the color conversion layer is also filled in the grooves or between the columns of the connection face and/or the side face.

In one embodiment of the present application, based on the foregoing scheme, the light emitting chip includes: the N-type layer is provided with a first electrode and is used as the light-emitting surface; the quantum well light-emitting layer is arranged on the surface of the N-type layer, on which the first electrode is arranged; the P-type layer is arranged on the surface, away from the N-type layer, of the quantum well light-emitting layer, and a second electrode is arranged on the surface, away from the quantum well light-emitting layer, of the P-type layer; if the groove or the post is provided at the light emitting face, the setting module is configured to: and etching the N-type layer to obtain the grooves or the columns arranged on the light emitting surface, or growing the grooves or the columns on the N-type layer.

In one embodiment of the present application, based on the foregoing scheme, the light emitting chip includes: an intrinsic semiconductor layer as the light emitting surface; the N-type layer is arranged on the intrinsic semiconductor layer, and a first electrode is arranged on the surface, away from the intrinsic semiconductor layer, of the N-type layer; the quantum well light-emitting layer is arranged on the surface, away from the intrinsic semiconductor layer, of the N-type layer; the P-type layer is arranged on the surface, away from the N-type layer, of the quantum well light-emitting layer, and a second electrode is arranged on the surface, away from the quantum well light-emitting layer, of the P-type layer; if the groove or the post is provided at the light emitting face, the setting module is configured to: etching the intrinsic semiconductor layer or etching the intrinsic semiconductor layer and the N-type layer to obtain grooves or columns arranged on the light emitting surface; or growing trenches or pillars on the intrinsic semiconductor layer.

In one embodiment of the present application, based on the foregoing scheme, the light emitting chip includes: a substrate as the light emitting surface; an intrinsic semiconductor layer disposed on the substrate; the N-type layer is arranged on the surface, facing away from the substrate, of the intrinsic semiconductor layer, and a first electrode is arranged on the surface, facing away from the intrinsic semiconductor layer, of the N-type layer; the quantum well light-emitting layer is arranged on the surface, away from the intrinsic semiconductor layer, of the N-type layer; the P-type layer is arranged on the surface, away from the N-type layer, of the quantum well light-emitting layer, and a second electrode is arranged on the surface, away from the quantum well light-emitting layer, of the P-type layer; if the groove or the post is provided at the light emitting face, the setting module is configured to: etching the substrate, or etching the substrate and the intrinsic semiconductor layer, or etching the substrate, the intrinsic semiconductor layer, and the N-type layer to obtain the grooves or the pillars provided on the light emitting surface, or growing the grooves or the pillars on the substrate.

In one embodiment of the present application, based on the foregoing scheme, before filling the color conversion layer, the filling module is configured to: in the color conversion layer, an astigmatism substance is added.

In one embodiment of the present application, based on the foregoing solution, before the light emitting surface is provided with the plurality of pillars or the plurality of grooves, a light shielding or reflecting portion is fabricated on the side surface to shield or reflect light emitted from the light emitting chip side surface, and the light is not passed through the color conversion layer.

In one embodiment of the present application, based on the foregoing scheme, before filling the color conversion layer, the setting module is configured to: if a plurality of grooves are formed in the surface of the light-emitting chip, a groove shielding part is arranged in the groove, the groove shielding part comprises a growth end and an extension end opposite to the growth end, the growth end is arranged on the inner wall of the groove, and a gap is reserved between the extension end and the inner wall and is arranged in the groove; if a plurality of grooves or a plurality of columns are arranged on the surface of the light-emitting chip at intervals, column shielding parts are arranged on the side walls of the columns, the column shielding parts extend from the side walls of the columns to adjacent columns, and the size of the column shielding parts is smaller than the gap between the side walls of the columns and the adjacent columns.

In one embodiment of the present application, based on the foregoing scheme, the color conversion layer includes: quantum dot layers and/or fluorescent layers.

In one embodiment of the present application, based on the foregoing scheme, before filling the color conversion layer, the setting module is configured to: a heat insulation layer is arranged on the surface of the light-emitting chip, and the heat insulation layer is of a porous structure; a plurality of grooves or a plurality of columns are arranged on the surface of the heat insulation layer at intervals.

In one embodiment of the present application, after filling the color conversion layer, a protective layer is provided on the side of the color conversion layer facing away from the light emitting chip, based on the foregoing scheme. In another aspect of the present application, there is provided an LED chip manufactured using the LED chip manufacturing method as described above.

In one embodiment of the present application, based on the foregoing scheme, the LED chip is fixed and electrically connected to the carrier plate to form the semiconductor light emitting assembly. The fixed and electric connection can be realized by die bonding and wire bonding.

According to the technical scheme, the application has at least the following advantages and positive effects:

the LED chip manufacturing method comprises the steps of providing a light-emitting chip; a plurality of grooves or a plurality of columns are arranged on the surface of the light-emitting chip at intervals; the color conversion layers are filled in the grooves or among the columns, the color conversion layers are used for changing the color of light emitted by the light-emitting chip, so that light with different colors from the light emitted by the light-emitting chip is obtained, the groove walls can fix the color conversion layers, the color conversion layers are prevented from falling off, uniform and stable color conversion layers are obtained, and the light-emitting effect of the LED chip can be improved; the columns arranged at intervals can avoid the falling of the color conversion layer, so that the uniform and stable color conversion layer is obtained, and the luminous effect of the LED chip can be improved.

Drawings

Fig. 1 schematically shows a schematic structure of an LED chip according to an embodiment of the present application;

fig. 2 schematically shows a schematic top view of the LED chip of fig. 1 as a front view;

fig. 3 schematically shows a structural schematic diagram of an LED chip according to another embodiment of the present application;

fig. 4 schematically shows a schematic top view of another LED chip according to the present application;

fig. 5 schematically shows a schematic structure of an LED chip according to an embodiment of the present application;

fig. 6 schematically shows a schematic top view of the LED chip of fig. 5 as a front view;

fig. 7 schematically shows a structural schematic of an LED chip according to an embodiment of the present application;

fig. 8 schematically illustrates a flow chart of a method for fabricating an LED chip according to an embodiment of the present application.

Description of the reference numerals

1. A light emitting chip; 2. a column; 3. a color conversion layer; 4. protective layer, 5, the retaining dam; 6. a groove.

Detailed Description

Exemplary embodiments that embody features and advantages of the present application are described in detail in the following description. It will be understood that the present application is capable of various modifications in various embodiments, all without departing from the scope of the present application, and that the description and illustrations herein are intended to be by way of illustration only and not to be limiting.

In one embodiment of the present application, there is provided an LED chip, as shown in fig. 1 and 2, including: a plurality of columns 2 are arranged on the surface of the light-emitting chip 1 at intervals; a color conversion layer 3 disposed on the light emitting chip 1 and filled between the plurality of posts 2 for changing the color of light emitted from the light emitting chip 1. The light emitting chip 1 may be a chip having a short wavelength of light emission, such as a blue light chip, a green light chip, or an ultraviolet light chip, which is low in production cost and simple in process, and the light emitting chip 1 may be a flip chip to form a small-sized LED chip. The color conversion layer 3 may include a quantum dot layer and a fluorescent layer, and the fluorescent layer may be a phosphor layer, a phosphor gel layer, or a fluorescent film. In other embodiments of the present application, the color conversion layer 3 may also include only a quantum dot layer or a fluorescent layer.

In this embodiment, the color conversion layer 3 is used to change the color of the light emitted by the light emitting chip 1, where the color converted by the color conversion layer 3 may be determined according to the required color and the light emitting color of the light emitting chip 1, for example, when the light emitting chip 1 is a blue light chip and a white light LED chip is required, the color conversion layer 3 may be a yellow fluorescent layer capable of converting blue light into white light; when the light emitting chip 1 is a blue light chip and a red LED chip is required, the color conversion layer 3 may be a red quantum dot layer capable of being excited by blue light to emit red light, such as CdTe-based, csSe-based, inP-based, or BYE perovskite-based quantum dots, or a red phosphor layer, such as YAG, KSF, or the like.

In this embodiment, light of a different color from the light emitted from the light emitting chip 1 can be obtained by conversion of the color conversion layer 3, and the columns 2 provided at intervals prevent the color conversion layer 3 from falling off, thereby obtaining a uniform and stable color conversion layer 3, and capable of improving the light emitting effect of the LED chip.

In one embodiment of the present application, the color conversion layer 3 may be filled between the pillars 2 and cover the tops of the pillars 2, and the pillars 2 may be transparent pillars to obtain a better light emitting effect. In other embodiments of the present application, the color conversion layer 3 may be flush with the tops of the pillars 2 to obtain a structurally stable color conversion layer 3.

In one embodiment of the present application, the light emitting chip 1 may include: the light emitting device comprises a light emitting surface, a connecting surface and a side surface, wherein the light emitting surface and the connecting surface are oppositely arranged, the side surface is arranged between the light emitting surface and the connecting surface, the connecting surface is used for connecting a substrate, a plurality of columns 2 can be arranged on the light emitting surface, the columns 2 can be arranged on the light emitting surface and the connecting surface, the columns 2 can be arranged on the light emitting surface and the side surface, and the columns 2 can be arranged on the light emitting surface, the connecting surface and the side surface; the color conversion layer 3 may be disposed on the light-emitting surface, the color conversion layer 3 may be disposed on the light-emitting surface and the connection surface, the color conversion layer 3 may be disposed on the light-emitting surface and the side surface, and the color conversion layer 3 may be disposed on the light-emitting surface, the connection surface and the side surface.

In this embodiment, the color conversion layer 3 provided on the connection surface can change the color of light emitted from the light emitting chip 1 toward the substrate, and the color conversion layer 3 provided on the side surface can change the color of light emitted from the light emitting chip 1 from the side surface, so that a better light emitting effect can be obtained.

In one embodiment of the present application, the pillar 2 may be an integral part of the body of the light emitting chip 1, and the light emitting chip 1 may be etched to obtain the pillar 2, where the etching method may be laser etching, dry etching, wet etching or nano imprinting.

In one embodiment of the present application, the light emitting chip 1 may include: the N-type layer is used as a light emitting surface, and a first electrode is arranged on the N-type layer; the quantum well light-emitting layer is arranged on the surface of the N-type layer, on which the first electrode is arranged, and is arranged away from the first electrode; the P-type layer is arranged on the surface of the quantum well light-emitting layer, which is away from the N-type layer, and the second electrode is arranged on the surface of the P-type layer, which is away from the quantum well light-emitting layer; if the light emitting surface is provided with a plurality of posts 2, one end of the posts 2 connected with the light emitting chip 1 is arranged on the N-type layer, and the posts 2 do not penetrate through the N-type layer, so that the light emitting chip 1 is prevented from being disconnected.

In this embodiment, the pillars 2 may be disposed directly on the N-type layer, with only the color conversion layer 3 filled between the pillars 2.

In this embodiment, the N-type layer may be provided with a receiving groove to accommodate the pillar 2, and a gap may be left between the sidewall of the pillar 2 and the wall of the receiving groove, and the gap may be filled with the color conversion layer 3, so that light may be color-converted in the N-type layer, and color conversion may be performed in advance, so as to obtain a better light-emitting effect.

In one embodiment of the present application, the light emitting chip 1 may include: an intrinsic semiconductor layer as a light emitting surface; the N-type layer is arranged on the intrinsic semiconductor layer, and a first electrode is arranged on the surface, away from the intrinsic semiconductor layer, of the N-type layer; the quantum well light-emitting layer is arranged on the surface, away from the intrinsic semiconductor layer, of the N-type layer, and is arranged avoiding the first electrode; the P-type layer is arranged on the surface of the quantum well light-emitting layer, which is away from the N-type layer, and the second electrode is arranged on the surface of the P-type layer, which is away from the quantum well light-emitting layer; if a plurality of posts 2 are arranged on the surface of the light emitting surface, one end of the posts 2 connected with the light emitting chip 1 is arranged on the intrinsic semiconductor layer or the N-type layer, and the posts 2 do not penetrate through the N-type layer so as to avoid the disconnection of the light emitting chip 1.

In this embodiment, the N-type layer or the intrinsic semiconductor layer may be provided with a receiving groove to receive the column 2, and a color conversion layer 3 may be provided between the sidewall of the column 2 and the wall of the receiving groove to obtain a better light emitting effect.

In one embodiment of the present application, the light emitting chip 1 may include: a substrate as a light emitting surface; an intrinsic semiconductor layer disposed on the substrate; the N-type layer is arranged on the surface, facing away from the substrate, of the intrinsic semiconductor layer, and a first electrode is arranged on the surface, facing away from the intrinsic semiconductor layer, of the N-type layer; the quantum well light-emitting layer is arranged on the surface, away from the intrinsic semiconductor layer, of the N-type layer, and is arranged avoiding the first electrode; the P-type layer is arranged on the surface of the quantum well light-emitting layer, which is away from the N-type layer, and the second electrode is arranged on the surface of the P-type layer, which is away from the quantum well light-emitting layer; if a plurality of posts 2 are arranged on the surface of the light emitting surface, one end of the posts 2 connected with the light emitting chip 1 is arranged on the substrate or the intrinsic semiconductor layer or the N-type layer, and the posts 2 do not penetrate through the N-type layer so as to avoid the disconnection of the chip.

In this embodiment, the N-type layer, the intrinsic semiconductor layer, or the substrate may be provided with a receiving groove for receiving the column 2, and a color conversion layer 3 may be provided between the sidewall of the column 2 and the wall of the receiving groove for better light emitting effect.

In one embodiment of the present application, the pillars 2 may be independent of the body of the light emitting chip 1, and may be nanowires grown on the body of the light emitting chip 1. The posts 2 may be grown on the light emitting surface of the light emitting chip 1. The light emitting chip 1 includes: in the case of an N-type layer, a quantum well light emitting layer, and a P-type layer, the pillars 2 may be grown on the N-type layer. The light emitting chip 1 includes: in the case of the intrinsic semiconductor layer, the N-type layer, the quantum well light emitting layer, and the P-type layer, the pillars 2 may be grown on the intrinsic semiconductor layer. The light emitting chip 1 includes: in the case of a substrate, an intrinsic semiconductor layer, an N-type layer, a quantum well light emitting layer, and a P-type layer, the pillars 2 may be grown on the substrate.

In other embodiments of the present application, a protective layer 4 may be provided on the light emitting chip 1, as in fig. 3, and the pillars 2 may be etched or grown on the protective layer 4. The protective layer 4 may be provided on the light emitting chip 1 by a vapor deposition method. The protective layer 4 may be a transparent layer so as to minimize the influence on the light emitted from the light emitting chip 1. The protective layer 4 may be an insulating layer that may extend from the side of the light emitting chip 1 to the surface of the light emitting chip 1 on which the posts 2 are disposed. The material of the protective layer 4 may be an oxide or nitride, such as

Or->

。

In an embodiment of the present application, the LED chip may further include a light blocking portion, where the light blocking portion is disposed on a side surface of the light emitting chip 1 and in a gap between the light emitting chip 1 and the substrate, and is configured to block light emitted from the side surface and emitted light by the light emitting chip 1, and is further configured to block light emitted from the gap between the light emitting chip 1 and the substrate, so as to avoid that reflection of light by the substrate affects a light emitting effect. The light blocking portion may be a black paste or a black resin coated on the sidewalls of the light emitting chip 1. In other embodiments of the present application, the light blocking portion may also be a black light blocking plate.

In an embodiment of the present application, post 2 may include post shielding portion, and the post shielding portion sets up at post 2 lateral wall, extends to adjacent post by post 2 lateral wall to carry out the partial shielding to the light that light emitting chip 1 sent, in order to reduce light emitting chip 1 and directly jet out the LED chip along the lateral wall of post 2, the size of post shielding portion is less than the gap between post 2 lateral wall and the adjacent post, in order to avoid shielding the gap between post 2 and the adjacent post completely. The column 2 may be arranged obliquely and the shielding may be an oblique portion in the column 2.

In an embodiment of the present application, based on the foregoing scheme, the pillar shielding portions of the two adjacent pillars 2 are staggered along the axial direction of the pillars 2, so as to further reduce direct light, and at the same time, not completely shield the chip light between the two adjacent pillars 2.

In one embodiment of the present application, based on the foregoing, the color conversion layer 3 may include a color conversion substance and a light scattering substance uniformly doped in the color conversion substance, and the light scattering substance may be a scattering powder, a diffusion powder, or the like.

In one embodiment of the present application, based on the foregoing solution, as shown in fig. 4, the LED chip may further include a dam 5, where the dam 5 is enclosed on the periphery of the plurality of pillars 2 to fix the color conversion layer 3; the color conversion layer 3 may also be disposed between the weirs 5 and the columns 2, so that the weirs 5 are filled with the color conversion layer 3, and a better light emitting effect can be obtained.

In an embodiment of the present application, the LED chip may further include a protection layer disposed on a surface of the color conversion layer facing away from the light emitting chip, covering the top of the color conversion layer 3, and also covering the top of the column 2, so as to protect the color conversion layer 3 and prevent dust, water, and other impurities from entering the color conversion layer 3.

In one embodiment of the application, the LED chip can further comprise a heat insulation layer, wherein the heat insulation layer is arranged on the surface of the light-emitting chip, is of a porous structure, and can also help to dissipate heat while insulating heat; the surface of the heat insulation layer is provided with a plurality of columns at intervals, and the color conversion layer 3 is filled among the columns of the heat insulation layer, wherein the heat insulation layer can be an aerogel layer. The aerogel is used as a porous structure, and when the color conversion layer 3 is filled, the color conversion layer 3 can permeate into holes of the aerogel, so that the obtained LED chip has a better luminous effect.

In one embodiment of the present application, there is provided an LED chip, as shown in fig. 5 and 6, including: a light emitting chip 1, the surface of which is provided with a plurality of grooves 6; a color conversion layer 3 disposed on the light emitting chip 1 and filled in the plurality of grooves 6 for changing the color of light emitted from the light emitting chip 1.

In this embodiment, light of a different color from the light emitted from the light emitting chip 1 can be obtained by the conversion of the color conversion layer 3, and the wall of the groove 6 can fix the color conversion layer 3, thereby obtaining a uniform and stable color conversion layer 3, and improving the light emitting effect of the LED chip.

In one embodiment of the present application, the color conversion layer 3 may be filled in the groove 6 and cover the top of the groove wall of the groove 6, and the groove wall may be a transparent wall, so as to obtain a better light emitting effect. In other embodiments of the present application, the color conversion layer 3 may be flush with the top of the groove wall to obtain a structurally stable color conversion layer 3.

In one embodiment of the present application, the notches of the adjacent grooves 6 may be arranged in contact, so that the notches block the surface of the light emitting chip 1 as much as possible, so that the color conversion layer 3 can cover more area of the light emitting chip 1, and thus a better light emitting effect is obtained.

In other implementations of the present application, the notches of adjacent grooves 6 may be arranged at intervals, so that the light emitted by the LED chip 1 and the color conversion layer 3 participate in light mixing together, and more luminescent colors may be obtained. In this embodiment, additional color conversion layers may also be provided at intervals of the notch, so that light emitted from the light emitting chip 1 is converted into a color corresponding to the additional color conversion layer and a color corresponding to the color conversion layer 3 at the same time, thereby obtaining more kinds of emission colors. For example, when the light emitting chip 1 is a blue light chip, and a white light LED chip is desired, the color conversion layer 3 is a yellow phosphor layer, and the additional color conversion layer is a green phosphor layer, a white light LED chip having a better light emitting effect can be obtained.

In one embodiment of the present application, the bottom of the groove 6 may be polygonal or circular, and the inclination angle of the groove wall may be set as required. When the groove bottom is polygonal, the distance between the color conversion layer corresponding to the polygonal corner and the adjacent groove 6 can be equal to the distance between the color conversion layer corresponding to the polygonal edge and the adjacent groove 6, so that a uniform conversion effect can be obtained, and a better luminous effect can be obtained.

In one embodiment of the present application, the light emitting chip 1 may include: the light emitting surface and the connecting surface are oppositely arranged, and the side surface is arranged between the light emitting surface and the connecting surface, wherein the connecting surface is used for connecting a substrate, a plurality of grooves 6 can be arranged on the light emitting surface and the connecting surface, a plurality of grooves 6 can be arranged on the light emitting surface and the side surface, and a plurality of grooves 6 can be arranged on the light emitting surface and the connecting surface and the side surface; the color conversion layer 3 may be disposed on the light-emitting surface, the color conversion layer 3 may be disposed on the light-emitting surface and the connection surface, the color conversion layer 3 may be disposed on the light-emitting surface and the side surface, and the color conversion layer 3 may be disposed on the light-emitting surface and the connection surface and the side surface.

In an embodiment of the present application, the trench 6 may be an integral part of the body of the light emitting chip 1, and the light emitting chip 1 may be etched to obtain the trench 6, and the etching method may be laser etching, dry etching, wet etching or nano imprinting.

In one embodiment of the present application, the light emitting chip 1 may include: the N-type layer is used as a light emitting surface, and a first electrode is arranged on the N-type layer; the quantum well light-emitting layer is arranged on the surface of the N-type layer, on which the first electrode is arranged, and is arranged away from the first electrode; the P-type layer is arranged on the surface of the quantum well light-emitting layer, which is away from the N-type layer, and the second electrode is arranged on the surface of the P-type layer, which is away from the quantum well light-emitting layer; if a plurality of grooves 6 are arranged on the surface of the light-emitting surface, the N-type layer is etched, the bottoms of the grooves 6 are arranged on the N-type layer, and the grooves 6 do not penetrate through the N-type layer, so that the chip is prevented from being broken.

In one embodiment of the present application, the light emitting chip 1 may include: an intrinsic semiconductor layer as a light emitting surface; the N-type layer is arranged on the intrinsic semiconductor layer, and a first electrode is arranged on the surface, away from the intrinsic semiconductor layer, of the N-type layer; the quantum well light-emitting layer is arranged on the surface, away from the intrinsic semiconductor layer, of the N-type layer, and is arranged avoiding the first electrode; the P-type layer is arranged on the surface of the quantum well light-emitting layer, which is away from the N-type layer, and the second electrode is arranged on the surface of the P-type layer, which is away from the quantum well light-emitting layer; if a plurality of grooves 6 are arranged on the surface of the light emitting surface, the intrinsic semiconductor layer is etched, or the intrinsic semiconductor layer and the N-type layer are etched, the groove bottom of the grooves 6 can be arranged on the N-type layer or the intrinsic semiconductor layer, and the grooves 6 do not penetrate through the N-type layer so as to avoid the disconnection of the chip.

In one embodiment of the present application, the light emitting chip 1 may include: a substrate as a light emitting surface; an intrinsic semiconductor layer disposed on the substrate; the N-type layer is arranged on the surface, facing away from the substrate, of the intrinsic semiconductor layer, and a first electrode is arranged on the surface, facing away from the intrinsic semiconductor layer, of the N-type layer; the quantum well light-emitting layer is arranged on the surface, away from the intrinsic semiconductor layer, of the N-type layer, and is arranged avoiding the first electrode; the P-type layer is arranged on the surface of the quantum well light-emitting layer, which is away from the N-type layer, and the second electrode is arranged on the surface of the P-type layer, which is away from the quantum well light-emitting layer; if a plurality of grooves 6 are arranged on the surface of the light emitting surface, the substrate and the intrinsic semiconductor layer are etched, or the substrate, the intrinsic semiconductor layer and the N-type layer are etched, the bottoms of the grooves 6 can be arranged on the substrate, the intrinsic semiconductor layer or the N-type layer, and the grooves 6 do not penetrate through the N-type layer so as to avoid the disconnection of the chip.

In other embodiments of the present application, the protective layer 4 may be disposed on the surface of the light emitting chip 1, and as shown in fig. 7, the groove 6 may be etched on the protective layer 4, and the groove bottom of the groove 6 may be disposed on the protective layer 4 or the light emitting chip 2. The protective layer 4 may be provided on the light emitting chip 1 by a vapor deposition method.

In an embodiment of the present application, the slot 6 may include a slot shielding portion, the slot shielding portion includes a growth end and an extension end opposite to the growth end, the growth end is disposed on an inner wall of the slot 6, and the extension end is disposed in the slot 6 and leaves a gap with the inner wall, so as to partially shield light emitted by the light emitting chip 1, and can avoid completely shielding the slot 6. The groove shielding portion may be a nano-pillar grown obliquely on the inner wall of the groove 6, and the growth may be metal catalysis or the like.

In one embodiment of the present application, based on the foregoing solution, the shielding portions of the inner wall with respect to the two directions are staggered along the depth direction of the groove 6, so as to further reduce the direct light, while not completely shielding the groove 6.

In one embodiment of the application, the LED chip can further comprise a heat insulation layer, wherein the heat insulation layer is arranged on the surface of the light-emitting chip, is of a porous structure, and can also help to dissipate heat while insulating heat; the surface of the heat insulation layer is provided with a plurality of grooves, and the grooves of the heat insulation layer are filled with the color conversion layer 3, wherein the heat insulation layer can be an aerogel layer. The aerogel is used as a porous structure, and when the color conversion layer 3 is filled, the color conversion layer 3 can permeate into holes of the aerogel, so that the obtained LED chip has a better luminous effect.

In one embodiment of the present application, there is provided an LED chip including: a light emitting chip 1, the surface of which is provided with a plurality of posts 2 and a plurality of grooves 6 at intervals; a color conversion layer 3 disposed on the light emitting chip 1 and filled in the plurality of grooves 6 and filled between the plurality of posts 2 for changing the color of light emitted from the light emitting chip 1.

In an embodiment of the present application, a method for manufacturing an LED chip is provided, and fig. 8 is referred to the above-mentioned embodiment of the LED chip for details not disclosed in the method embodiment of the present application.

Referring to fig. 8, the method for manufacturing the LED chip at least includes steps S810 to S830, which are described in detail as follows:

in step S810, a light emitting chip is provided;

in step S820, a plurality of grooves or a plurality of pillars are provided on the surface of the light emitting chip at intervals;

in step S830, a color conversion layer is filled in the plurality of grooves or between the plurality of columns, the color conversion layer being used to change the color of light emitted from the light emitting chip.

In the embodiment of fig. 8, by providing a light emitting chip; a plurality of grooves or a plurality of columns are arranged on the surface of the light-emitting chip at intervals; the color conversion layers are filled in the grooves or among the columns, the color conversion layers are used for changing the color of light emitted by the light-emitting chip, so that light with different colors from the light emitted by the light-emitting chip is obtained, the groove walls can fix the color conversion layers, the color conversion layers are prevented from falling off, uniform and stable color conversion layers are obtained, and the light-emitting effect of the LED chip can be improved; the columns arranged at intervals can fix the color conversion layer, so that the color conversion layer is prevented from falling off, the uniform and stable color conversion layer is obtained, and the luminous effect of the LED chip can be improved.

In one embodiment of the present application, a light emitting chip may include: the light-emitting surface and the connection face of relative setting to and set up the side between light-emitting surface and connection face, set up a plurality of grooves or interval at the light-emitting chip surface and set up a plurality of posts, include: a plurality of columns or a plurality of grooves are arranged on the light-emitting surface; or a plurality of posts or a plurality of grooves are also arranged on the connecting surface and/or the side surface; filling a color conversion layer in a plurality of grooves or filling a color conversion layer between a plurality of pillars, comprising: filling a color conversion layer in a groove of the light-emitting surface or among a plurality of columns; or the color conversion layer is also filled in the grooves or between the columns of the connection face and/or the side face.

In one embodiment of the present application, a light emitting chip may include: the N-type layer is provided with a first electrode and is used as a light-emitting surface; the quantum well light-emitting layer is arranged on the surface of the N-type layer, on which the first electrode is arranged, and is arranged away from the first electrode; the P-type layer is arranged on the surface of the quantum well light-emitting layer, which is away from the N-type layer, and the second electrode is arranged on the surface of the P-type layer, which is away from the quantum well light-emitting layer. In step S820, the step of providing a plurality of grooves or a plurality of pillars at intervals on the surface of the light emitting chip may include: the N-type layer is etched to obtain trenches or pillars. Specifically, the etching method may be laser etching, wet etching, dry etching, nanoimprint, or the like. In other embodiments of the present application, the step of disposing a plurality of grooves or a plurality of pillars at intervals on the surface of the light emitting chip in step S820 may include: trenches or pillars are grown on the N-type layer. In particular, the growth method may be metal catalysis or the like, and the pillars may be nano pillars.

In one embodiment of the present application, a light emitting chip may include: an intrinsic semiconductor layer as a light emitting surface; the N-type layer is arranged on the intrinsic semiconductor layer, and a first electrode is arranged on the surface, away from the intrinsic semiconductor layer, of the N-type layer; the quantum well light-emitting layer is arranged on the surface, away from the intrinsic semiconductor layer, of the N-type layer, and is arranged avoiding the first electrode; the P-type layer is arranged on the surface of the quantum well light-emitting layer, which is away from the N-type layer, and the second electrode is arranged on the surface of the P-type layer, which is away from the quantum well light-emitting layer. In step S820, the step of providing a plurality of grooves or a plurality of pillars at intervals on the surface of the light emitting chip may include: etching the intrinsic semiconductor layer or etching the intrinsic semiconductor layer and the N-type layer to obtain grooves or pillars provided on the light emitting surface. In other embodiments of the present application, the step of disposing a plurality of grooves or a plurality of pillars at intervals on the surface of the light emitting chip in step S820 may include: trenches or pillars are grown on the intrinsic semiconductor layer.

In one embodiment of the present application, a light emitting chip may include: a substrate as a light emitting surface; an intrinsic semiconductor layer disposed on the substrate; the N-type layer is arranged on the surface, facing away from the substrate, of the intrinsic semiconductor layer, and a first electrode is arranged on the surface, facing away from the intrinsic semiconductor layer, of the N-type layer; the quantum well light-emitting layer is arranged on the surface, away from the intrinsic semiconductor layer, of the N-type layer, and is arranged avoiding the first electrode; the P-type layer is arranged on the surface of the quantum well light-emitting layer, which is away from the N-type layer, and the second electrode is arranged on the surface of the P-type layer, which is away from the quantum well light-emitting layer. In step S820, the step of providing a plurality of grooves or a plurality of pillars at intervals on the surface of the light emitting chip may include: the substrate is etched, or the substrate and the intrinsic semiconductor layer are etched, or the substrate, the intrinsic semiconductor layer and the N-type layer are etched. In other embodiments of the present application, the step of disposing a plurality of grooves or a plurality of pillars at intervals on the surface of the light emitting chip in step S820 may include: a trench or post is grown on the substrate.

In the above embodiment, the N-type layer cannot be penetrated when etching the N-type layer, so that disconnection can be avoided.

In one embodiment of the present application, a protective layer may be further disposed on the surface of the light emitting chip, and in step S820, the step of disposing a plurality of grooves or a plurality of pillars at intervals on the surface of the light emitting chip may include: etching the protective layer to obtain grooves or columns, and etching the protective layer and the light-emitting chip to obtain the grooves or columns. In other embodiments of the present application, the step of disposing a plurality of grooves or a plurality of pillars at intervals on the surface of the light emitting chip in step S820 may include: a trench or post is grown over the protective layer.

In one embodiment of the present application, in step S830, the method of filling the color conversion layer between the plurality of pillars may include spot coating, spray coating, or embossing, or the like.

In one embodiment of the present application, before the step S830, before filling the color conversion layer between the plurality of columns, the method for manufacturing an LED chip may include providing a heat insulation layer on the surface of the light emitting chip 1, and the heat insulation layer may be a porous structure; the surface of the heat insulation layer is provided with a plurality of grooves or a plurality of columns at intervals, and the color conversion layer 3 is filled in the grooves or among the columns of the heat insulation layer, wherein the heat insulation layer can be an aerogel layer. The aerogel is used as a porous structure, and when the color conversion layer 3 is filled, the color conversion layer 3 can permeate into holes of the aerogel, so that the obtained LED chip has a better luminous effect.

In one embodiment of the present application, after the LED chip is fabricated based on the foregoing scheme, the LED chip is fixed and electrically connected to the carrier plate to form the semiconductor light emitting assembly. The fixing and electric connection can be realized by means of die bonding, bonding wires and the like. In one embodiment of the present application, the LED chip may be fabricated into a package before the LED chip is mounted and electrically connected to the carrier plate to form a semiconductor light emitting assembly.

While the present application has been described with reference to several exemplary embodiments, it is understood that the terminology used is intended to be in the nature of words of description and illustration rather than of limitation. As the present application may be embodied in several forms without departing from the spirit or essential attributes thereof, it should be understood that the above-described embodiments are not limited by any of the details of the foregoing description, but rather should be construed broadly within its spirit and scope as defined in the appended claims, and therefore all changes and modifications that fall within the metes and bounds of the claims, or equivalence of such metes and bounds are therefore intended to be embraced by the appended claims.

Claims

1. The manufacturing method of the LED chip is characterized by comprising the following steps of:

providing a light-emitting chip;

a plurality of grooves or a plurality of columns are arranged on the surface of the light-emitting chip at intervals;

and filling a color conversion layer in the grooves or filling a color conversion layer between the columns, wherein the color conversion layer is used for changing the color of light emitted by the light emitting chip.

2. The method of manufacturing an LED chip of claim 1, wherein said light emitting chip comprises: the light-emitting surface that sets up relatively with the connection face, and set up the light-emitting surface with the side between the connection face the light-emitting chip surface sets up a plurality of grooves or interval and sets up a plurality of posts, includes:

providing a plurality of the pillars or the grooves on the light-emitting surface;

or a plurality of the posts or the grooves are also arranged on the connecting surface and/or the side surface;

the filling of the color conversion layer in the plurality of the grooves or the filling of the color conversion layer between the plurality of the pillars includes:

filling the color conversion layer in the grooves of the light-emitting surface or among a plurality of columns;

or the color conversion layer is also filled in the grooves or between the columns of the connection face and/or the side face.

3. The method for manufacturing an LED chip according to claim 2, wherein,

the light emitting chip includes:

the N-type layer is provided with a first electrode and is used as the light-emitting surface;

the quantum well light-emitting layer is arranged on the surface of the N-type layer, on which the first electrode is arranged;

the P-type layer is arranged on the surface, away from the N-type layer, of the quantum well light-emitting layer, and a second electrode is arranged on the surface, away from the quantum well light-emitting layer, of the P-type layer;

if the grooves or the columns are arranged on the light emitting surface, a plurality of grooves or a plurality of columns are arranged on the surface of the light emitting chip at intervals, and the method comprises the following steps:

etching the N-type layer to obtain the grooves or the columns arranged on the light emitting surface;

or growing the trenches or the pillars on the N-type layer.

4. The method for manufacturing an LED chip according to claim 2, wherein,

the light emitting chip includes:

an intrinsic semiconductor layer as the light emitting surface;

the N-type layer is arranged on the intrinsic semiconductor layer, and a first electrode is arranged on the surface, away from the intrinsic semiconductor layer, of the N-type layer;

the quantum well light-emitting layer is arranged on the surface, away from the intrinsic semiconductor layer, of the N-type layer;

etching the intrinsic semiconductor layer or etching the intrinsic semiconductor layer and the N-type layer to obtain the grooves or the pillars provided on the light emitting surface;

or growing the trenches or the pillars on the intrinsic semiconductor layer.

5. The method for manufacturing an LED chip according to claim 2, wherein,

the light emitting chip includes:

a substrate as the light emitting surface;

an intrinsic semiconductor layer disposed on the substrate;

the N-type layer is arranged on the surface, facing away from the substrate, of the intrinsic semiconductor layer, and a first electrode is arranged on the surface, facing away from the intrinsic semiconductor layer, of the N-type layer;

etching the substrate, or etching the substrate and the intrinsic semiconductor layer, or etching the substrate, the intrinsic semiconductor layer, and the N-type layer to obtain the grooves or the pillars provided on the light emitting surface;

or growing the trenches or the pillars on the substrate.

6. The method of manufacturing an LED chip of claim 1, wherein prior to filling the color conversion layer, the method comprises:

in the color conversion layer, an astigmatism substance is added.

7. The method of manufacturing an LED chip according to claim 2, further comprising manufacturing a light shielding or reflecting portion on the side surface before the light emitting surface is provided with the plurality of posts or the plurality of grooves.

8. The method of manufacturing an LED chip of claim 1, wherein prior to filling the color conversion layer, the method comprises:

if a plurality of grooves are formed in the surface of the light-emitting chip, a groove shielding part is arranged in the groove, the groove shielding part comprises a growth end and an extension end opposite to the growth end, the growth end is arranged on the inner wall of the groove, and a gap is reserved between the extension end and the inner wall and is arranged in the groove;

if a plurality of grooves or a plurality of columns are arranged on the surface of the light-emitting chip at intervals, column shielding parts are arranged on the side walls of the columns, the column shielding parts extend from the side walls of the columns to adjacent columns, and the size of the column shielding parts is smaller than the gap between the side walls of the columns and the adjacent columns.

9. The method of manufacturing an LED chip of claim 1, wherein said color conversion layer comprises:

quantum dot layers and/or fluorescent layers.

10. The method of manufacturing an LED chip of claim 1, wherein prior to filling the color conversion layer, the method comprises:

a heat insulation layer is arranged on the surface of the light-emitting chip, and the heat insulation layer is of a porous structure;

a plurality of grooves or a plurality of columns are arranged on the surface of the heat insulation layer at intervals.

11. The method of manufacturing an LED chip of claim 1, wherein after filling the color conversion layer, the method comprises: and arranging a protective layer on the surface of the color conversion layer, which is away from the light-emitting chip.

12. An LED chip, characterized in that the LED chip is manufactured by the LED chip manufacturing method according to any one of claims 1 to 11.

13. A semiconductor light emitting assembly, comprising:

the LED chip of claim 12; and

a carrier plate;

the LED chip is fixed and electrically connected to the carrier plate.