CN113871517A - Multi-wavelength LED chip and manufacturing method thereof - Google Patents

Multi-wavelength LED chip and manufacturing method thereof Download PDF

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Publication number
CN113871517A
CN113871517A CN202111101525.0A CN202111101525A CN113871517A CN 113871517 A CN113871517 A CN 113871517A CN 202111101525 A CN202111101525 A CN 202111101525A CN 113871517 A CN113871517 A CN 113871517A
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layer
light
type semiconductor
semiconductor layer
emitting structure
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林志伟
崔恒平
蔡玉梅
蔡海防
陈凯轩
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Xiamen Changelight Co Ltd
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Xiamen Changelight Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The invention provides a multi-wavelength LED chip and a manufacturing method thereof, wherein the multi-wavelength LED chip comprises: the bonding layer, the metal reflector and the stacking structure are sequentially stacked on the surface of the substrate; the stack comprises light-emitting structures and a covering layer, the light-emitting structures are sequentially stacked along the first direction and distributed in a step shape, and each light-emitting structure comprises a P-type semiconductor layer, an active layer and an N-type semiconductor layer which are sequentially stacked along the first direction; two adjacent light-emitting structures are insulated from each other by the covering layer; and the metal connecting layer is stacked on the step surface formed by the two adjacent light-emitting structures and is used for connecting the two corresponding adjacent light-emitting structures in series, so that the crystal quality can be optimized, and the light-emitting efficiency of the multi-wavelength LED chip is improved.

Description

Multi-wavelength LED chip and manufacturing method thereof
Technical Field
The invention relates to the technical field of light emitting diodes, in particular to a multi-wavelength LED chip and a manufacturing method thereof.
Background
Conventional dual or multi-wavelength LEDs are typically implemented in a package. For example, a wearable blood oxygen monitoring system needs LEDs with wavelengths of 660nm and 940nm, and a solution adopted by a packaging factory is to package an LED chip with a wavelength of 660nm and an LED chip with a wavelength of 940nm in the same package to realize a dual-wavelength function. The scheme needs at least two chips to realize dual wavelength, and has higher cost and large packaging volume.
The existing dual-wavelength LED chip comprises a first light-emitting structure, a tunneling layer and a second light-emitting structure which are sequentially stacked on a conductive substrate, wherein each light-emitting structure comprises an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the N-type semiconductor layer of the first light-emitting structure and the P-type semiconductor layer of the second light-emitting structure are connected through the tunneling layer. However, if the existing one-time epitaxial growth process is adopted, after a P-type semiconductor layer (with Mg doping) of the second light-emitting structure is grown, a tunneling layer is grown, a P-type material is easily diffused to the tunneling layer, so that the tunneling effect is reduced, the internal resistance of the device is increased, and the P-type material of the P-type semiconductor layer of the second light-emitting structure can continuously exert adverse effects on an N-type semiconductor layer and an active layer of the first light-emitting structure which are subsequently grown, so that the crystal quality is deteriorated, and the light-emitting efficiency of the LED chip is low.
Disclosure of Invention
In view of this, the present invention provides a multi-wavelength LED chip and a manufacturing method thereof, so as to solve the problems in the prior art that the internal resistance is increased due to stacking of a plurality of light emitting structures, which results in poor crystal quality and low light emitting efficiency of the LED chip.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a multi-wavelength LED chip, comprising:
the substrate is a conductive substrate;
the bonding layer, the metal reflector and the stacking structure are sequentially stacked on the surface of the substrate along a first direction; the first direction is perpendicular to the substrate and is directed to the stacked structure by the substrate; the stacked structure comprises a light-emitting structure and a covering layer, the light-emitting structures are sequentially stacked along the first direction and distributed in a step shape, and each light-emitting structure comprises a P-type semiconductor layer, an active layer and an N-type semiconductor layer which are sequentially stacked along the first direction; two adjacent light-emitting structures are insulated from each other by the covering layer;
a first electrode arranged on the surface of the substrate on the side away from the bonding layer;
a second electrode laminated on a surface of the stacked structure on a side facing away from the metal mirror;
and the metal connecting layer is laminated on the step surface formed by the two adjacent light-emitting structures and is used for connecting the two corresponding adjacent light-emitting structures in series.
Optionally, the light waves emitted by the light emitting structures are different.
Optionally, the light emitting device further includes a protective layer, and the protective layer covers the light emitting structures and the exposed surfaces of the metal connection layers.
Optionally, a contact electrode is stacked on the surface of each metal connection layer, and the contact electrode is insulated from the corresponding light emitting structure by the protection layer.
Optionally, the light emitting structure includes a first light emitting structure and a second light emitting structure; the first light-emitting structure comprises a first P type semiconductor layer, a first active layer and a first N type semiconductor layer which are sequentially stacked along the first direction; the second light emitting structure comprises a second P type semiconductor layer, a second active layer and a second N type semiconductor layer which are sequentially stacked along the first direction; the first light emitting structure, the cover layer, and the second light emitting structure constitute the stack structure.
Optionally, a first mesa extending to the second N-type semiconductor layer is disposed along a local surface of the first N-type semiconductor layer, and the second N-type semiconductor layer is exposed; and a second table top extending to the first P-type semiconductor layer is arranged along the local surface of the first N-type semiconductor layer, part of the first P-type semiconductor layer is exposed, and the first table top and the second table top form the step.
Optionally, the level of the metal connection layer is lower than half of the level of the first P-type semiconductor layer, and the level of the metal connection layer is higher than one sixth of the level of the first P-type semiconductor layer.
Optionally, an N-type barrier layer is disposed between the first N-type semiconductor layer and the first active layer, and a P-type barrier layer is disposed between the first P-type semiconductor layer and the first active layer.
Optionally, the thickness of the P-type barrier layer is greater than that of the N-type barrier layer, and the thickness of the P-type barrier layer is 0nm to 150nm, excluding end points.
Optionally, the method is characterized in that: the structure of the N-type barrier layer and the P-type barrier layer comprises an undoped AlGaAs layer, an AlGaInP layer and an AlGaAs layer which are sequentially stacked along the first direction, wherein the Al component is more than 45%; and sequentially stacking the undoped AlGaAs layer, AlGaInP layer and AlGaAs layer, wherein the thickness of the AlGaInP layer is less than that of any one group of the AlGaAs layers.
Optionally, the method is characterized in that: the structure of the N-type barrier layer and the P-type barrier layer comprises an undoped AlGaInP layer, an AlGaAs layer and an AlGaInP layer which are sequentially stacked along the first direction, wherein the Al component is more than 45%; in the AlGaInP layer, AlGaAs layer and AlGaInP layer which are not doped are laminated in this order, the thickness of the AlGaAs layer is smaller than that of any one group of the AlGaInP layers.
Optionally, the cover layer includes an insulating layer and a non-doped layer stacked on each other, the insulating layer is close to the first light emitting structure, the insulating layer covers a side surface of the first P-type semiconductor layer facing away from the P-type barrier layer, and the thickness of the cover layer is 200nm to 2000nm, excluding end points.
Optionally, the contact electrode includes a third electrode, and the third electrode is insulated from the first light emitting structure by the protective layer.
The invention also provides a manufacturing method of the multi-wavelength LED chip, which is characterized by comprising the following steps of:
step one, providing a growth substrate;
stacking a stacked structure on the surface of the growth substrate, wherein the stacked structure comprises a first light-emitting structure, a covering layer and a second light-emitting structure which are sequentially stacked, and the first light-emitting structure comprises a first N-type semiconductor layer, an N-type barrier layer, a first active layer, a P-type barrier layer and a first P-type semiconductor layer which are sequentially stacked; the second light-emitting structure comprises a second N-type semiconductor layer, a second active layer and a second P-type semiconductor layer which are sequentially stacked, the first N-type semiconductor layer is close to the growth substrate, and the second N-type semiconductor layer is close to the covering layer;
the thickness of the P-type barrier layer is greater than that of the N-type barrier layer, the thickness of the P-type barrier layer is 0nm-150nm, and the end point value is not included;
the N-type barrier layer and the P-type barrier layer comprise undoped AlGaAs layers, AlGaInP layers and AlGaAs layers which are sequentially stacked along the growth direction, wherein the Al component is more than 45%; sequentially stacking undoped AlGaAs layers, AlGaInP layers and AlGaAs layers, the thickness of the AlGaInP layers being smaller than that of any one group of the AlGaAs layers;
or the N-type barrier layer and the P-type barrier layer comprise an undoped AlGaInP layer, an AlGaAs layer and an AlGaInP layer which are sequentially stacked along the growth direction, wherein the Al component is more than 45%; sequentially stacking undoped AlGaInP layers, AlGaAs layers and AlGaInP layers, wherein the thickness of the AlGaAs layers is smaller than that of any one group of AlGaInP layers;
the covering layer comprises an insulating layer and a non-doped layer which are mutually stacked, the insulating layer is close to the first light-emitting structure, the insulating layer covers one side surface of the first P-type semiconductor layer, which is far away from the P-type barrier layer, and the thickness of the covering layer is 200nm-2000nm and does not include an end point value;
growing a metal reflector and a bonding layer on the surface of the stacked structure in sequence;
bonding a substrate on the surface of the bonding layer, wherein the substrate is a conductive substrate;
step five, stripping the growth substrate;
sixthly, manufacturing a first electrode which is arranged on the surface of one side of the substrate, which is far away from the bonding layer;
step seven, manufacturing a step, wherein a first table surface extending to a second N-type semiconductor layer is arranged along the local surface of the first N-type semiconductor layer, and the second N-type semiconductor layer is exposed; a second table surface extending to the first P-type semiconductor layer is arranged along the local surface of the first N-type semiconductor layer, and part of the first P-type semiconductor layer is exposed; the first mesa and the second mesa form the step;
depositing a metal connecting layer on the surface of the step, wherein the metal connecting layer covers the side wall of the covering layer and is connected with part of the second N-type semiconductor layer and part of the first P-type semiconductor layer, so that the first light-emitting structure and the second light-emitting structure are connected in series;
the level of the metal connecting layer is lower than the level of one half of the first P-type semiconductor layer, and the level of the metal connecting layer is higher than the level of one sixth of the first P-type semiconductor layer;
ninthly, manufacturing a protective layer, wherein the protective layer covers the first light-emitting structure, the second light-emitting structure and the exposed surface of the metal connecting layer;
tenth, manufacturing a second electrode manufacturing area and a third electrode manufacturing area, and etching a part of the protective layer on the surface of one side of the stacking structure, which is far away from the metal reflector, to form the second electrode manufacturing area; etching part of the protective layer on the surface of the metal connecting layer to form a third electrode manufacturing area;
step eleven, depositing a second electrode in the second electrode manufacturing area;
and a twelfth step of depositing a third electrode in the third electrode manufacturing area, wherein the third electrode is insulated from the first light-emitting structure through the protective layer.
Optionally, the light waves emitted by the first light emitting structure and the second light emitting structure are different.
Optionally, the wavelength of the second light emitting structure is higher than the wavelength of the first light emitting structure.
Through the technical scheme, the following effects are achieved:
1. according to the multi-wavelength LED chip provided by the invention, the multiple light-emitting structures are arranged on the conductive substrate and stacked, so that the multi-wavelength of one chip can be realized, the packaging volume can be reduced, and the packaging and subsequent terminal product manufacturing cost can be reduced; two adjacent light-emitting structures are mutually insulated through the covering layer, so that the problem that the crystal quality of the later light-emitting structure is poor is avoided, and the light-emitting efficiency of the multi-wavelength LED chip is improved; and the metal connecting layer is connected with two corresponding adjacent light-emitting structures in series, so that the plurality of light-emitting structures form a stable series electric connection structure.
2. Furthermore, the light-emitting structure can emit light with several different wavelengths by controlling the first electrode, the second electrode and the contact electrode according to actual needs; the protective layer covers the exposed surfaces of the light-emitting structures and the metal connecting layers, and the performance of the multi-wavelength LED chip can be improved.
3. Furthermore, the light-emitting structure comprises a first light-emitting structure and a second light-emitting structure, a step is formed by the first table top and the second table top, and the first light-emitting structure and the second light-emitting structure form a stable series electric connection structure through the metal connection layer arranged on the surface of the step, so that the adhesiveness between the metal connection layer and the covering layer as well as between the first light-emitting structure and the second light-emitting structure is increased, and the reliability of the multi-wavelength LED chip is further improved.
4. Furthermore, the horizontal height of the metal connecting layer is set, so that the problem that metal materials are diffused to the active layer is avoided, and the light emitting efficiency of the multi-wavelength LED chip can be improved.
5. Furthermore, by arranging the P type barrier layer and the N type barrier layer, the N type doping of the first N type semiconductor layer and the P type doping of the first P type semiconductor layer can be prevented from diffusing to the first active layer, so that the crystal quality of the active layer is reduced, and the luminous efficiency of the multi-wavelength LED chip is influenced.
6. The method for manufacturing the multi-wavelength LED chip is used for manufacturing the LED chip with double wavelengths, the epitaxial structure with high crystal quality is epitaxially grown at one time, and the metal connecting layer, the first electrode, the second electrode and the third electrode are used in a matching mode, so that the problems that the crystal quality is poor and the luminous efficiency of the LED chip is low due to the fact that internal resistance is increased due to stacking among a plurality of light-emitting structures can be effectively solved, and meanwhile, the method is simple, convenient and fast in process manufacturing and easy to achieve.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a multi-wavelength LED chip according to a first embodiment of the present invention;
fig. 2 is a schematic structural diagram of a multi-wavelength LED chip according to a second embodiment of the present invention;
fig. 3 to fig. 5 are schematic structural diagrams of a multi-wavelength LED chip according to a third embodiment of the present invention;
fig. 6 to fig. 16 are schematic structural diagrams corresponding to steps of a method for manufacturing a multi-wavelength LED chip structure according to a fourth embodiment of the present invention.
The symbols in the drawings illustrate that:
1. a substrate; 2. a bonding layer; 3. a metal mirror; 4. a light emitting structure; 4a, an N-type semiconductor layer; 4b, an active layer; 4c, a P-type semiconductor layer; 41. a first light emitting structure; 411. a first N-type semiconductor layer; 412. a first active layer; 413. a first P-type semiconductor layer; 414. an N-type barrier layer; 415. a P-type barrier layer; 42. a second light emitting structure; 421. a second N-type semiconductor layer; 422. a second active layer; 423. a second P-type semiconductor layer; 5. a cover layer; 51. an insulating layer; 52. a non-doped layer; 6. a metal connection layer; 7. a first electrode; 8. a second electrode; 9. a contact electrode; 91. a third electrode; 10. a protective layer; 11. growing a substrate; A. a first table top, a second table top and a third table top; C. a second electrode manufacturing area; D. and a third electrode manufacturing area.
Detailed Description
For the clarity of the disclosure, the following description will be made with reference to the accompanying drawings. The invention is not limited to this specific embodiment. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
The multi-wavelength LED chip provided in this embodiment, as shown in fig. 1, includes:
a substrate 1, wherein the substrate 1 is a conductive substrate;
the bonding layer 2, the metal reflector 3 and the stacking structure are sequentially stacked on the surface of the substrate 1 along a first direction; the first direction is perpendicular to the substrate 1 and is directed to the stacked structure from the substrate 1; the stacked structure comprises a light-emitting structure 4 and a covering layer 5, the light-emitting structures 4 are sequentially stacked along a first direction and distributed in a step shape, and each light-emitting structure 4 comprises a P-type semiconductor layer 4c, an active layer 4b and an N-type semiconductor layer 4a which are sequentially stacked along the first direction; two adjacent light emitting structures 4 are insulated from each other by a cover layer 5;
a first electrode 7 arranged on a surface of the substrate 1 facing away from the bonding layer 2;
a second electrode 8 laminated on a surface of the stacked structure on a side facing away from the metal mirror 3;
and the metal connecting layer 6 is laminated on the step surface formed by the two adjacent light-emitting structures 4 and is used for connecting the two corresponding adjacent light-emitting structures 4 in series.
Optionally, in this embodiment, the light waves emitted by the light emitting structures 4 are different.
Optionally, in this embodiment, the wavelengths of the light emitting structures 4 gradually decrease along the light emitting direction, and the light emitting direction is the same as the first direction, so as to prevent the short-wavelength light emitting structure from being absorbed by the long-wavelength light emitting structure.
Fig. 1 shows two light emitting structures 4, and it should be understood by those skilled in the art that the figure is only schematic and the light emitting structures 4 of the present invention are not limited to two.
In the embodiment, multiple light-emitting structures 4 are stacked to realize multiple wavelengths of one chip, so that the packaging volume can be reduced, and the manufacturing cost of packaging and subsequent terminal products can be reduced; the two adjacent light-emitting structures 4 are mutually insulated through the covering layer 5, so that the problem that the quality of a crystal of the later light-emitting structure is poor is avoided, and the light-emitting efficiency of the multi-wavelength LED chip is improved; and the metal connecting layer 6 is adopted to connect two adjacent light-emitting structures 4 in series correspondingly, so that a plurality of light-emitting structures form a stable series electric connection structure.
Example two
As shown in fig. 2, the multi-wavelength LED chip is different from the first embodiment in that the chip further includes a protective layer 10, and the protective layer 10 covers the exposed surfaces of the light emitting structures 4 and the metal connecting layers 6.
Optionally, in this embodiment, a contact electrode 9 is stacked on the surface of each metal connection layer 6, and the contact electrode 9 is insulated from the corresponding light emitting structure 4 by a protection layer 10.
In the present embodiment, the polarities of the contact electrode 9 and the second electrode 8 are the same, the polarities of the contact electrode 9 and the first electrode 7 are opposite, the contact electrode 9 and the second electrode 8 are N-type electrodes, and the first electrode 7 is a common P-type electrode.
In this embodiment, the protection layer 10 covers the exposed surfaces of the light-emitting structures 4 and the metal connection layers 6, so that the performance of the multi-wavelength LED chip can be improved; by laminating the contact electrodes 9 on the surfaces of the metal connection layers 6, the light-emitting structure 4 can emit light with several different wavelengths by controlling the first electrode 7, the second electrode 8 and the contact electrodes 9 according to actual needs.
EXAMPLE III
As shown in fig. 3, a multiwavelength LED chip is different from the first or second embodiment in that the light emitting structure 4 includes a first light emitting structure 41 and a second light emitting structure 42; the first light emitting structure 41 includes a first P-type semiconductor layer 413, a first active layer 412, and a first N-type semiconductor layer 411 sequentially stacked in a first direction; the second light emitting structure 42 includes a second P-type semiconductor layer 423, a second active layer 422, and a second N-type semiconductor layer 421 sequentially stacked in the first direction; the first light emitting structure 41, the cover layer 5, and the second light emitting structure 42 constitute a stacked structure.
In the present embodiment, the light waves emitted from the first light emitting structure 41 and the second light emitting structure 42 are different from each other, and preferably, the wavelength of the second light emitting structure 42 is higher than the wavelength of the first light emitting structure 41.
Optionally, in this embodiment, as shown in fig. 4, a first mesa a extending to the second N-type semiconductor layer 421 is disposed along a partial surface of the first N-type semiconductor layer 411, and the second N-type semiconductor layer 421 is exposed; a second mesa B extending toward the first P-type semiconductor layer 413 is disposed along a partial surface of the first N-type semiconductor layer 411, and a portion of the first P-type semiconductor layer 413 is exposed, and the first mesa a and the second mesa B form a step.
In the present embodiment, the first mesa a and the second mesa B form a step, and the metal connection layer 6 disposed on the surface of the step not only enables the first light emitting structure 41 and the second light emitting structure 42 to form a stable series electrical connection structure, but also increases adhesion between the metal connection layer 6 and the cover layer 5, and between the first light emitting structure 41 and the second light emitting structure 42, thereby improving reliability of the multi-wavelength LED chip.
Optionally, in this embodiment, the level of the metal connection layer 6 is lower than the level of one-half of the first P-type semiconductor layer 413, and the level of the metal connection layer 6 is higher than the level of one-sixth of the first P-type semiconductor layer 413.
In the present embodiment, by setting the horizontal height relationship between the metal connection layer 6 and the first P-type semiconductor layer 413, the problem of diffusion of the metal material into the active layer is avoided, and the light emitting efficiency of the multi-wavelength LED chip can be improved.
Optionally, in the present embodiment, an N-type barrier layer 414 is disposed between the first N-type semiconductor layer 411 and the first active layer 412, and a P-type barrier layer 415 is disposed between the first P-type semiconductor layer 413 and the first active layer 412.
It should be noted that the P-type barrier layer 415 and the N-type barrier layer 414 of the present embodiment can prevent the N-type doping of the first N-type semiconductor layer 411 and the P-type doping of the first P-type semiconductor layer 413 from diffusing into the first active layer 412, which causes the crystal quality of the active layer to be deteriorated and affects the light emitting efficiency of the multi-wavelength LED chip.
Optionally, in this embodiment, the thickness of the P-type barrier layer 415 is greater than that of the N-type barrier layer 414, and the thickness of the P-type barrier layer 415 is 0nm to 150nm, excluding the endpoints.
It should be noted that the thickness of the P-type blocking layer 415 is greater than that of the N-type blocking layer 414 in this embodiment, so as to enhance the blocking of the P-type doping, thereby avoiding the problem that the P-type doping diffuses into the first active layer 412 under the same epitaxy condition due to the greater influence of the P-type doping on the active layer; the thickness of the P-type barrier layer 415 and the N-type barrier layer 414 is limited, so that the barrier effect is achieved, and the electron migration is not affected due to too thick thickness.
Optionally, in this embodiment, the structure of the N-type barrier layer 414 and the P-type barrier layer 415 includes an undoped AlGaAs layer, an AlGaInP layer, and an AlGaAs layer stacked in this order along the first direction, wherein the Al composition is greater than 45%; in the sequentially stacked undoped AlGaAs layer, AlGaInP layer, and AlGaAs layer, the thickness of AlGaInP layer is smaller than that of any one set of AlGaAs layers.
Optionally, in this embodiment, the structure of the N-type barrier layer 414 and the P-type barrier layer 415 includes an undoped AlGaInP layer, an AlGaAs layer, and an AlGaInP layer stacked in this order along the first direction, wherein the Al composition is greater than 45%; in the AlGaInP layer, AlGaAs layer and AlGaInP layer which are not doped are laminated in this order, the thickness of the AlGaAs layer is smaller than that of any one group of the AlGaInP layers.
It should be noted that, in the present embodiment, by setting the structure and thickness relationship of the N-type barrier layer 414 and the P-type barrier layer 415, the blocking effect of the diffusion of the N-type doping and the P-type doping of the first light emitting structure 41 to the first active layer 412 is improved, and the influence of the N-type barrier layer 414 and the P-type barrier layer 415 on the light transmission can be reduced; wherein, the Al component is greater than 45% to prevent the materials of the N-type barrier layer 414 and the P-type barrier layer 415 from absorbing light to the first active region 412; and the undoped material is adopted, so that the adverse effect on the crystal growth of the active layer can be avoided, and the generation of non-radiation excitation is reduced.
Optionally, in this embodiment, as shown in fig. 5, the covering layer 5 includes an insulating layer 51 and an undoped layer 52 stacked on each other, the insulating layer 51 is close to the first light emitting structure 41, and the insulating layer 51 covers a side surface of the first P-type semiconductor layer 413 facing away from the P-type barrier layer 415, and a thickness of the covering layer is 200nm to 2000nm, which does not include an end value.
It should be noted that the insulating layer 51 of the present embodiment can prevent the P-type dopant (with Mg dopant) of the first light emitting structure 41 from diffusing into the second N-type semiconductor layer 421 of the second light emitting structure 42, so as to improve the growth environment of the subsequent second light emitting structure 42; the non-doped layer 52 of the present embodiment may be made of AlGaAs or AlGaInP or may be formed by AlGaAs and AlGaInP alternately, so as to enhance the barrier to the P-type doping of the first light emitting structure, and further facilitate the subsequent growth of the second light emitting structure 42, thereby further improving the quality of the multi-wavelength LED chip, wherein the Al component is greater than 45% to prevent the material from absorbing light to the active layer.
Optionally, in this embodiment, the contact electrode 9 includes a third electrode 91, and the third electrode 91 is insulated from the first light emitting structure 41 by the protective layer 10.
It should be noted that, in the present embodiment, the polarities of the third electrode 91 and the second electrode 8 are the same, the polarities of the third electrode 91 and the first electrode 7 are opposite, the third electrode 91 and the second electrode 8 are N-type electrodes, and the first electrode 7 is a common P-type electrode, so that the second light emitting structure 42 can emit light alone or the first light emitting structure 41 and the second light emitting structure 42 can emit light with different wavelengths simultaneously by controlling the first electrode 7, the second electrode 8 and the third electrode 91 according to actual requirements.
Example four
The embodiment provides a method for manufacturing a multi-wavelength LED chip, which is used for manufacturing the three multi-wavelength LED chips in the embodiments, and the manufacturing method includes the following steps:
step one, providing a growth substrate 11;
step two, as shown in fig. 6, stacking a stacked structure on the surface of the growth substrate 11, where the stacked structure includes a first light emitting structure 41, a covering layer 5, and a second light emitting structure 42 that are sequentially stacked, and the first light emitting structure 41 includes a first N-type semiconductor layer 411, an N-type barrier layer 414, a first active layer 412, a P-type barrier layer 415, and a first P-type semiconductor layer 413 that are sequentially stacked; the second light emitting structure 42 includes a second N-type semiconductor layer 421, a second active layer 422, and a second P-type semiconductor layer 423 sequentially stacked, and the first N-type semiconductor layer 411 is adjacent to the growth substrate 11 and the second N-type semiconductor layer 421 is adjacent to the capping layer 5.
It should be noted that the P-type barrier layer 415 and the N-type barrier layer 414 of the present embodiment can prevent the N-type dopant of the first N-type semiconductor layer 411 and the P-type dopant of the first P-type semiconductor layer 413 from diffusing into the first active layer 412 under the influence of a high temperature for a long time when the second light emitting structure 42 is subsequently grown, which causes the crystal quality of the active layer to be deteriorated, and affects the light emitting efficiency of the multi-wavelength LED chip.
The thickness of the P-type barrier layer 415 is greater than that of the N-type barrier layer 414, the thickness of the P-type barrier layer 415 is 0nm to 150nm, and the end points are not included;
it should be noted that the thickness of the P-type blocking layer 415 is greater than that of the N-type blocking layer 414 in this embodiment, so as to enhance the blocking of the P-type doping, and avoid the problem that the P-type doping diffuses to the first active layer 412 within the same epitaxial growth time and at high temperature due to the greater influence of the P-type doping on the active layer; the thickness of the P-type barrier layer 415 and the N-type barrier layer 414 is limited, so that the barrier effect is achieved, and the electron migration is not affected due to too thick thickness.
The N-type barrier layer 414 and the P-type barrier layer 415 include an undoped AlGaAs layer, an AlGaInP layer, and an AlGaAs layer stacked in this order along the growth direction, wherein the Al composition is greater than 45%; stacking undoped AlGaAs layers, AlGaInP layers and AlGaAs layers in sequence, wherein the thickness of the AlGaInP layers is less than that of any group of AlGaAs layers;
alternatively, the N-type barrier layer 414 and the P-type barrier layer 415 include an undoped AlGaInP layer, an AlGaAs layer, and an AlGaInP layer stacked in this order along the growth direction, wherein the Al composition is greater than 45%; in stacking an undoped AlGaInP layer, an AlGaAs layer, and an AlGaInP layer in this order, the thickness of the AlGaAs layer is smaller than that of any one of the AlGaInP layers.
It should be noted that, in the present embodiment, by setting the structure and thickness relationship of the N-type barrier layer 414 and the P-type barrier layer 415, the blocking effect of the diffusion of the N-type doping and the P-type doping of the first light emitting structure 41 to the first active layer 412 is improved, and the influence of the N-type barrier layer 414 and the P-type barrier layer 415 on the light transmission can be reduced; wherein, the Al component is greater than 45% to prevent the materials of the N-type barrier layer 414 and the P-type barrier layer 415 from absorbing light to the first active region 412; and the undoped material is adopted, so that the adverse effect on the crystal growth of the active layer can be avoided, and the generation of non-radiation excitation is reduced.
As shown in fig. 5, the cover layer 5 includes an insulating layer 51 and an undoped layer 52 stacked on each other, the insulating layer 51 is close to the first light emitting structure 41, the insulating layer 51 covers a side surface of the first P-type semiconductor layer 413 facing away from the P-type barrier layer 415, and the thickness of the cover layer 5 is 200nm to 2000nm, excluding end points;
it should be noted that the insulating layer 51 of the present embodiment can block P-type doping (with Mg doping) of the first light emitting structure 41 from diffusing into the second N-type semiconductor layer 421 of the second light emitting structure 42, and the insulating layer 51 covers the entire epitaxial growth chamber and the epitaxial tray, so as to block diffusion of the compound attached to the wall of the growth chamber, and improve the growth environment of the subsequent second light emitting structure 42; the non-doped layer 52 of the present embodiment may be made of AlGaAs or AlGaInP or formed by AlGaAs and AlGaInP alternately grown, which may enhance the barrier to the P-type doping of the first light emitting structure 41, facilitate the subsequent epitaxial growth of the second light emitting structure 42, and further improve the quality of the multi-wavelength LED chip, wherein the Al component is greater than 45% to prevent the material from absorbing light to the active layer.
Step three, as shown in fig. 7, growing a metal reflector 3 and a bonding layer 2 on the surface of the stacked structure in sequence;
step four, as shown in fig. 8, bonding a substrate 1 on the surface of the bonding layer 2, wherein the substrate 1 is a conductive substrate;
step five, as shown in fig. 9, the growth substrate 11 is peeled off;
sixthly, as shown in fig. 10, manufacturing a first electrode 7 which is arranged on the surface of the substrate 1 on the side away from the bonding layer 2;
step seven, as shown in fig. 11, fabricating a step, wherein a first mesa a extending to the second N-type semiconductor layer 421 is disposed along a partial surface of the first N-type semiconductor layer 411, and the second N-type semiconductor layer 421 is exposed; a second mesa B extending toward the first P-type semiconductor layer 413 is formed along a partial surface of the first N-type semiconductor layer 411, and a portion of the first P-type semiconductor layer 413 is exposed; the first mesa A and the second mesa B form a step;
step eight, as shown in fig. 12, depositing a metal connection layer 6 on the step surface, wherein the metal connection layer 6 covers the sidewall of the covering layer 5 and connects a portion of the second N-type semiconductor layer 421 and a portion of the first P-type semiconductor layer 413, so that the first light emitting structure 41 and the second light emitting structure 42 are connected in series;
in the present embodiment, the first mesa a and the second mesa B form a step, and the metal connection layer 6 disposed on the surface of the step not only enables the first light emitting structure 41 and the second light emitting structure 42 to form a stable series electrical connection structure, but also increases adhesion between the metal connection layer 6 and the cover layer 5, and between the first light emitting structure 41 and the second light emitting structure 42, thereby improving reliability of the multi-wavelength LED chip.
The level of the metal connection layer 6 is lower than the level of one-half of the first P-type semiconductor layer 413, and the level of the metal connection layer 6 is higher than the level of one-sixth of the first P-type semiconductor layer 413.
It should be noted that, in this embodiment, by setting the horizontal height of the metal connection layer, the problem of diffusion of the metal material to the active layer is avoided, and the light emitting efficiency of the multi-wavelength LED chip can be improved.
Ninthly, as shown in fig. 13, manufacturing a protection layer 10, wherein the protection layer 10 covers the first light emitting structure 41, the second light emitting structure 42 and the exposed surface of the metal connection layer 6;
tenth, as shown in fig. 14, a second electrode manufacturing area C and a third electrode manufacturing area D are manufactured, and a part of the protective layer 10 is etched on the surface of one side of the stacked structure, which is away from the metal reflector 3, to form a second electrode manufacturing area C; etching part of the protective layer 10 on the surface of the metal connecting layer 6 to form a third electrode manufacturing area D;
step eleven, as shown in fig. 15, depositing a second electrode 8 in the second electrode manufacturing region C;
step twelve, as shown in fig. 16, depositing a third electrode 91 in the third electrode manufacturing region D, wherein the third electrode 91 is insulated from the first light emitting structure 41 by the protective layer 10.
Optionally, in this embodiment, the light waves emitted by the first light emitting structure 41 and the second light emitting structure 42 are different.
It should be noted that, in the present embodiment, the polarities of the third electrode 91 and the second electrode 8 are the same, the polarities of the third electrode 91 and the first electrode 7 are opposite, the third electrode 91 and the second electrode 8 are N-type electrodes, and the first electrode 7 is a common P-type electrode, so that the second light emitting structure 42 can emit light alone or the first light emitting structure 41 and the second light emitting structure 42 can emit light with different wavelengths simultaneously by controlling the first electrode 7, the second electrode 8 and the third electrode 91 according to actual requirements.
Optionally, in this embodiment, the wavelength of the second light emitting structure 42 is higher than the wavelength of the first light emitting structure 41.
It should be noted that, in the present embodiment, the first light emitting structure 41 is close to the light emitting direction, and the wavelength of the second light emitting structure 42 is higher than that of the first light emitting structure 41, so as to avoid the light structure with short wavelength being absorbed by the light structure with long wavelength.
In summary, through the above technical solution, the following effects are achieved:
1. according to the multi-wavelength LED chip provided by the embodiment, the multiple light-emitting structures are arranged on the conductive substrate and stacked, so that the multi-wavelength of one chip can be realized, the packaging volume can be reduced, and the packaging and subsequent terminal product manufacturing cost can be reduced; two adjacent light-emitting structures are mutually insulated through the covering layer, so that the problem that the crystal quality of the later light-emitting structure is poor is avoided, and the light-emitting efficiency of the multi-wavelength LED chip is improved; and the metal connecting layer is connected with two corresponding adjacent light-emitting structures in series, so that the plurality of light-emitting structures form a stable series electric connection structure.
2. Furthermore, the light-emitting structure can emit light with several different wavelengths by controlling the first electrode, the second electrode and the contact electrode according to actual needs; the protective layer covers the exposed surfaces of the light-emitting structures and the metal connecting layers, and the performance of the multi-wavelength LED chip can be improved.
3. Furthermore, the light-emitting structure comprises a first light-emitting structure and a second light-emitting structure, a step is formed by the first table top and the second table top, and the first light-emitting structure and the second light-emitting structure form a stable series electric connection structure through the metal connection layer arranged on the surface of the step, so that the adhesiveness between the metal connection layer and the covering layer as well as between the first light-emitting structure and the second light-emitting structure is increased, and the reliability of the multi-wavelength LED chip is further improved.
4. Furthermore, the horizontal height of the metal connecting layer is set, so that the problem that metal materials are diffused to the active layer is avoided, and the light emitting efficiency of the multi-wavelength LED chip can be improved.
5. Furthermore, by arranging the P type barrier layer and the N type barrier layer, the N type doping of the first N type semiconductor layer and the P type doping of the first P type semiconductor layer can be prevented from diffusing to the first active layer, so that the crystal quality of the active layer is reduced, and the luminous efficiency of the multi-wavelength LED chip is influenced.
6. The method for manufacturing the multi-wavelength LED chip is used for manufacturing the LED chip with double wavelengths, the epitaxial structure with high crystal quality is epitaxially grown at one time, and the metal connecting layer, the first electrode, the second electrode and the third electrode are used in a matching mode, so that the problems that the crystal quality is poor and the luminous efficiency of the LED chip is low due to the fact that internal resistance is increased due to stacking among a plurality of light-emitting structures can be effectively solved, and meanwhile, the method is simple, convenient and fast in process manufacturing and easy to achieve.
It will be understood by those skilled in the art that in the present disclosure, the terms "transverse," "longitudinal," "upper," "lower," and the like are used in an orientation or positional relationship indicated in the drawings for convenience in describing the present invention and simplicity in description, but do not indicate or imply that the referenced devices or components must be in a particular orientation, constructed and operated in a particular orientation, and thus the terms should not be construed as limiting the present invention.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (16)

1. A multi-wavelength LED chip, comprising:
the substrate is a conductive substrate;
the bonding layer, the metal reflector and the stacking structure are sequentially stacked on the surface of the substrate along a first direction; the first direction is perpendicular to the substrate and is directed to the stacked structure by the substrate; the stacked structure comprises a light-emitting structure and a covering layer, the light-emitting structures are sequentially stacked along the first direction and distributed in a step shape, and each light-emitting structure comprises a P-type semiconductor layer, an active layer and an N-type semiconductor layer which are sequentially stacked along the first direction; two adjacent light-emitting structures are insulated from each other by the covering layer;
a first electrode arranged on the surface of the substrate on the side away from the bonding layer;
a second electrode laminated on a surface of the stacked structure on a side facing away from the metal mirror;
and the metal connecting layer is laminated on the step surface formed by the two adjacent light-emitting structures and is used for connecting the two corresponding adjacent light-emitting structures in series.
2. The multiwavelength LED chip of claim 1, wherein: the light waves emitted by the light emitting structures are different.
3. The multiwavelength LED chip of claim 1, wherein: the light-emitting structure further comprises a protective layer, and the protective layer covers the light-emitting structures and the exposed surfaces of the metal connecting layers.
4. The multiwavelength LED chip of claim 3, wherein: and contact electrodes are laminated on the surfaces of the metal connecting layers and are insulated from the corresponding light-emitting structures through the protective layers.
5. The multiwavelength LED chip of any of claims 1 to 4, wherein: the light emitting structure includes a first light emitting structure and a second light emitting structure; the first light-emitting structure comprises a first P type semiconductor layer, a first active layer and a first N type semiconductor layer which are sequentially stacked along the first direction; the second light emitting structure comprises a second P type semiconductor layer, a second active layer and a second N type semiconductor layer which are sequentially stacked along the first direction; the first light emitting structure, the cover layer, and the second light emitting structure constitute the stack structure.
6. The multiwavelength LED chip of claim 5, wherein: a first table surface extending to the second N-type semiconductor layer is arranged along the local surface of the first N-type semiconductor layer, and the second N-type semiconductor layer is exposed; and a second table top extending to the first P-type semiconductor layer is arranged along the local surface of the first N-type semiconductor layer, part of the first P-type semiconductor layer is exposed, and the first table top and the second table top form the step.
7. The multiwavelength LED chip of claim 5, wherein: the level of the metal connecting layer is lower than the level of one half of the first P-type semiconductor layer, and the level of the metal connecting layer is higher than the level of one sixth of the first P-type semiconductor layer.
8. The multiwavelength LED chip of claim 5, wherein: an N-type barrier layer is arranged between the first N-type semiconductor layer and the first active layer, and a P-type barrier layer is arranged between the first P-type semiconductor layer and the first active layer.
9. The multiwavelength LED chip of claim 8, wherein: the thickness of the P-type barrier layer is larger than that of the N-type barrier layer, and the thickness of the P-type barrier layer is 0nm-150nm and does not include an endpoint value.
10. The multiwavelength LED chip of any of claims 8 or 9, wherein: the structure of the N-type barrier layer and the P-type barrier layer comprises an undoped AlGaAs layer, an AlGaInP layer and an AlGaAs layer which are sequentially stacked along the first direction, wherein the Al component is more than 45%; and sequentially stacking the undoped AlGaAs layer, AlGaInP layer and AlGaAs layer, wherein the thickness of the AlGaInP layer is less than that of any one group of the AlGaAs layers.
11. The multiwavelength LED chip of any of claims 8 or 9, wherein: the structure of the N-type barrier layer and the P-type barrier layer comprises an undoped AlGaInP layer, an AlGaAs layer and an AlGaInP layer which are sequentially stacked along the first direction, wherein the Al component is more than 45%; in the AlGaInP layer, AlGaAs layer and AlGaInP layer which are not doped are laminated in this order, the thickness of the AlGaAs layer is smaller than that of any one group of the AlGaInP layers.
12. The multiwavelength LED chip of claim 5, wherein: the covering layer comprises an insulating layer and a non-doped layer which are mutually stacked, the insulating layer is close to the first light-emitting structure, the insulating layer covers one side surface of the first P-type semiconductor layer, which is far away from the P-type barrier layer, and the thickness of the covering layer is 200nm-2000nm and does not include an end point value.
13. The multiwavelength LED chip of claim 5, wherein: the contact electrode includes a third electrode disposed to be insulated from the first light emitting structure by the protective layer.
14. A manufacturing method of a multi-wavelength LED chip is characterized by comprising the following steps:
step one, providing a growth substrate;
stacking a stacked structure on the surface of the growth substrate, wherein the stacked structure comprises a first light-emitting structure, a covering layer and a second light-emitting structure which are sequentially stacked, and the first light-emitting structure comprises a first N-type semiconductor layer, an N-type barrier layer, a first active layer, a P-type barrier layer and a first P-type semiconductor layer which are sequentially stacked; the second light-emitting structure comprises a second N-type semiconductor layer, a second active layer and a second P-type semiconductor layer which are sequentially stacked, the first N-type semiconductor layer is close to the growth substrate, and the second N-type semiconductor layer is close to the covering layer;
the thickness of the P-type barrier layer is greater than that of the N-type barrier layer, the thickness of the P-type barrier layer is 0nm-150nm, and the end point value is not included;
the N-type barrier layer and the P-type barrier layer comprise undoped AlGaAs layers, AlGaInP layers and AlGaAs layers which are sequentially stacked along the growth direction, wherein the Al component is more than 45%; sequentially stacking undoped AlGaAs layers, AlGaInP layers and AlGaAs layers, the thickness of the AlGaInP layers being smaller than that of any one group of the AlGaAs layers;
or the N-type barrier layer and the P-type barrier layer comprise an undoped AlGaInP layer, an AlGaAs layer and an AlGaInP layer which are sequentially stacked along the growth direction, wherein the Al component is more than 45%; sequentially stacking undoped AlGaInP layers, AlGaAs layers and AlGaInP layers, wherein the thickness of the AlGaAs layers is smaller than that of any one group of AlGaInP layers;
the covering layer comprises an insulating layer and a non-doped layer which are mutually stacked, the insulating layer is close to the first light-emitting structure, the insulating layer covers one side surface of the first P-type semiconductor layer, which is far away from the P-type barrier layer, and the thickness of the covering layer is 200nm-2000nm and does not include an end point value;
growing a metal reflector and a bonding layer on the surface of the stacked structure in sequence;
bonding a substrate on the surface of the bonding layer, wherein the substrate is a conductive substrate;
step five, stripping the growth substrate;
sixthly, manufacturing a first electrode which is arranged on the surface of one side of the substrate, which is far away from the bonding layer;
step seven, manufacturing a step, wherein a first table surface extending to a second N-type semiconductor layer is arranged along the local surface of the first N-type semiconductor layer, and the second N-type semiconductor layer is exposed; a second table surface extending to the first P-type semiconductor layer is arranged along the local surface of the first N-type semiconductor layer, and part of the first P-type semiconductor layer is exposed; the first mesa and the second mesa form the step;
depositing a metal connecting layer on the surface of the step, wherein the metal connecting layer covers the side wall of the covering layer and is connected with part of the second N-type semiconductor layer and part of the first P-type semiconductor layer, so that the first light-emitting structure and the second light-emitting structure are connected in series;
the level of the metal connecting layer is lower than the level of one half of the first P-type semiconductor layer, and the level of the metal connecting layer is higher than the level of one sixth of the first P-type semiconductor layer;
ninthly, manufacturing a protective layer, wherein the protective layer covers the first light-emitting structure, the second light-emitting structure and the exposed surface of the metal connecting layer;
tenth, manufacturing a second electrode manufacturing area and a third electrode manufacturing area, and etching a part of the protective layer on the surface of one side of the stacking structure, which is far away from the metal reflector, to form the second electrode manufacturing area; etching part of the protective layer on the surface of the metal connecting layer to form a third electrode manufacturing area;
step eleven, depositing a second electrode in the second electrode manufacturing area;
and a twelfth step of depositing a third electrode in the third electrode manufacturing area, wherein the third electrode is insulated from the first light-emitting structure through the protective layer.
15. The method of fabricating a multiwavelength LED chip of claim 14, wherein: the light waves emitted by the first light-emitting structure and the second light-emitting structure are different.
16. The method of fabricating a multiwavelength LED chip of claim 15, wherein: the wavelength of the second light emitting structure is higher than the wavelength of the first light emitting structure.
CN202111101525.0A 2021-09-18 2021-09-18 Multi-wavelength LED chip and manufacturing method thereof Pending CN113871517A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023225782A1 (en) * 2022-05-23 2023-11-30 京东方科技集团股份有限公司 Light-emitting device and display apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023225782A1 (en) * 2022-05-23 2023-11-30 京东方科技集团股份有限公司 Light-emitting device and display apparatus

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