CN116099741A - 一种纳米晶磁芯带材绝缘镀膜方法及其装备 - Google Patents
一种纳米晶磁芯带材绝缘镀膜方法及其装备 Download PDFInfo
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- CN116099741A CN116099741A CN202111322934.3A CN202111322934A CN116099741A CN 116099741 A CN116099741 A CN 116099741A CN 202111322934 A CN202111322934 A CN 202111322934A CN 116099741 A CN116099741 A CN 116099741A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
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- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 6
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Abstract
Description
镀膜材料 | 工艺方式 | 镀膜厚度 | 镀膜均匀性 | 应力影响 | 绝缘耐压 | |
实施例2 | <![CDATA[SiO<sub>2</sub>]]> | 喷镀 | 0.6μm | 好 | 小 | 130V DC |
对比例2 | MgO | 浸泡式 | 2.3μm | 偏边 | 大 | 40V DC |
Claims (10)
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Citations (12)
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- 2021-11-09 CN CN202111322934.3A patent/CN116099741A/zh active Pending
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Inventor after: Cui Fali Inventor after: Cao Pei Inventor after: Xu Xiangyu Inventor after: Yuan Zhao Inventor after: Hu Xinyue Inventor after: Zhang Chenyang Inventor after: Sun Zesong Inventor after: Hua Hongtao Inventor before: Chen Gang Inventor before: Zhan Shaotong Inventor before: Zhao Yuping Inventor before: Tong Bowei Inventor before: Liu Minglei Inventor before: Sun Zesong Inventor before: Hua Hongtao Inventor before: Xu Xiangyu |
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