CN116097452A - 铁电存储器及其制作方法、存储设备 - Google Patents
铁电存储器及其制作方法、存储设备 Download PDFInfo
- Publication number
- CN116097452A CN116097452A CN202080104470.6A CN202080104470A CN116097452A CN 116097452 A CN116097452 A CN 116097452A CN 202080104470 A CN202080104470 A CN 202080104470A CN 116097452 A CN116097452 A CN 116097452A
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- Prior art keywords
- ferroelectric
- metal layer
- layer
- semiconductor
- memory
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- 230000015654 memory Effects 0.000 title claims abstract description 197
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 248
- 239000002184 metal Substances 0.000 claims abstract description 248
- 239000004065 semiconductor Substances 0.000 claims abstract description 180
- 239000000758 substrate Substances 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 18
- 238000003860 storage Methods 0.000 claims description 4
- 230000005669 field effect Effects 0.000 description 65
- 238000000034 method Methods 0.000 description 51
- 238000010586 diagram Methods 0.000 description 21
- 230000008569 process Effects 0.000 description 21
- 230000010287 polarization Effects 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 239000003990 capacitor Substances 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 7
- 238000000059 patterning Methods 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 102100029469 WD repeat and HMG-box DNA-binding protein 1 Human genes 0.000 description 3
- 101710097421 WD repeat and HMG-box DNA-binding protein 1 Proteins 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 230000006386 memory function Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- SLXKOJJOQWFEFD-UHFFFAOYSA-N 6-aminohexanoic acid Chemical compound NCCCCCC(O)=O SLXKOJJOQWFEFD-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 125000002015 acyclic group Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
本申请提供了一种铁电存储器及其制作方法、存储设备，涉及存储器领域，能够提高铁电存储器的耐用性。铁电存储器由至少一个存储单元构成，存储单元包括：柱状的半导体沟道部、源部、漏部；源部和漏部分别设置于半导体沟道部的两端；该存储单元还包括在半导体沟道部的侧面上依次环绕设置的第一介电层、第一金属层；层叠设置在第一金属层表面的铁电层和第二金属层；铁电层位于第一金属层和第二金属层之间。
Description
PCT国内申请，说明书已公开。
Claims (15)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/119530 WO2022067720A1 (zh) | 2020-09-30 | 2020-09-30 | 铁电存储器及其制作方法、存储设备 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116097452A true CN116097452A (zh) | 2023-05-09 |
| CN116097452A8 CN116097452A8 (zh) | 2024-05-21 |
Family
ID=80949383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080104470.6A Pending CN116097452A (zh) | 2020-09-30 | 2020-09-30 | 铁电存储器及其制作方法、存储设备 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN116097452A (zh) |
| WO (1) | WO2022067720A1 (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024091179A1 (en) * | 2022-10-28 | 2024-05-02 | National University Of Singapore | A vertical channel-all-around metal-antiferroelectric-metal-insulator-semiconductor field effect transistor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10062426B2 (en) * | 2014-04-24 | 2018-08-28 | Micron Technology, Inc. | Field effect transistor constructions with gate insulator having local regions radially there-through that have different capacitance at different circumferential locations relative to a channel core periphery |
| KR102476806B1 (ko) * | 2016-04-01 | 2022-12-13 | 에스케이하이닉스 주식회사 | 강유전체막을 포함하는 반도체 메모리 장치 |
| CN109326604A (zh) * | 2017-08-01 | 2019-02-12 | 华邦电子股份有限公司 | 三维存储器及其操作方法 |
| US10741585B2 (en) * | 2018-06-29 | 2020-08-11 | Sandisk Technologies Llc | Content addressable memory using threshold-adjustable vertical transistors and methods of forming the same |
| CN116017987A (zh) * | 2018-09-30 | 2023-04-25 | 华润微电子控股有限公司 | 三维铁电电容式非易失性存储器器件及其制造方法 |
-
2020
- 2020-09-30 WO PCT/CN2020/119530 patent/WO2022067720A1/zh active Application Filing
- 2020-09-30 CN CN202080104470.6A patent/CN116097452A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022067720A1 (zh) | 2022-04-07 |
| CN116097452A8 (zh) | 2024-05-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CI02 | Correction of invention patent application |
Correction item: PCT international application to national stage day Correct: 2023.01.31 False: 2023.01.30 Number: 19-01 Page: The title page Volume: 39 Correction item: PCT international application to national stage day Correct: 2023.01.31 False: 2023.01.30 Number: 19-01 Volume: 39 |