CN116097414A - 自对准尖端 - Google Patents
自对准尖端 Download PDFInfo
- Publication number
- CN116097414A CN116097414A CN202180052960.0A CN202180052960A CN116097414A CN 116097414 A CN116097414 A CN 116097414A CN 202180052960 A CN202180052960 A CN 202180052960A CN 116097414 A CN116097414 A CN 116097414A
- Authority
- CN
- China
- Prior art keywords
- tip
- self
- aligning
- die
- lockable swivel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims description 28
- 230000007935 neutral effect Effects 0.000 claims description 16
- 230000000717 retained effect Effects 0.000 claims description 9
- 230000004913 activation Effects 0.000 claims description 2
- 230000014759 maintenance of location Effects 0.000 claims description 2
- 238000012937 correction Methods 0.000 abstract description 3
- 230000008569 process Effects 0.000 description 16
- 229910000679 solder Inorganic materials 0.000 description 11
- 239000004593 Epoxy Substances 0.000 description 10
- 238000005201 scrubbing Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910015365 Au—Si Inorganic materials 0.000 description 2
- 210000003484 anatomy Anatomy 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 210000004904 fingernail bed Anatomy 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005324 grain boundary diffusion Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
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Abstract
一种裸片放置系统提供尖端主体及裸片放置头以在无需在每一拾取及放置操作之前进行校准的情况下确保裸片与衬底的平面度。并入到尖端主体中的自对准尖端帮助裸片放置/附接。此尖端提供存在于裸片与衬底之间的平面度误差的全局校正,不论这些误差是源于龙门架未对准(即,裸片侧未对准)还是机器甲板工具未对准(即,衬底侧未对准)。
Description
相关申请案
本申请案主张2020年8月27日申请的第63/070,873号美国临时申请案的权益。此申请案的全文以引用方式并入本文中。
技术领域
本发明涉及微电子封装,且更特定来说,涉及用于在将裸片附接到衬底时确保裸片与衬底的平面度的系统及方法。
背景技术
集成电路(IC)制造通常涉及使用复杂光刻工艺在半导体晶片中形成微小固态装置及电路。这些光刻工艺通常包含在晶片上形成材料层、将层图案化、使衬底及/或经图案化层掺杂及热处理(例如退火)所得结构。接着,重复这些工艺以建立IC结构。结果是含有大量IC的晶片。
在晶片形成之后,其通常将经历分类工艺。分类涉及电测试晶片上的每一IC芯片的功能性。在分类之后,将晶片分离成个别IC芯片,IC芯片接着个别或分组封装以并入到例如印刷电路板(PCB)的衬底上。在工艺的此阶段中,个别IC通常称为裸片。接着,这些裸片必须放置于衬底上且固定到衬底上的特定位置,使得其变成电及/或光学连接到裸片经设计以与其交互的其它组件。
在最广意义上,裸片附接工艺可基于环氧树脂或为共晶的。在环氧树脂裸片附接中,裸片通常在室温下放置于环氧树脂上。接着,其稍后在烘箱中回流以‘固化’环氧树脂且将裸片冻结在适当位置中。针对其中使用UV环氧树脂的一些环氧树脂应用,固化使用目标UV光来原位完成以冻结/固化裸片以防止其在放置后移动。原位通常暗含裸片接合头在裸片固化时将裸片固持于适当位置中。针对环氧树脂工艺,尤其针对较大裸片大小,裸片与衬底平面度对在裸片下维持均匀环氧树脂接合线厚度来说很重要。
在共晶裸片附接工艺中,裸片通常原位回流。焊料可经预沉积于裸片或衬底的背部上。具有焊料凸块的裸片是裸片上的预沉积焊料的实例。在一些情况中,整个裸片底面可预沉积有焊料。在其它情况中,使用焊料预制件。首先放置预制件(通常<25um厚)且在预制件的顶部上放置裸片。接着,当接合头将裸片固持于适当位置中时,施加热以使裸片回流。
针对高功率应用,通常不使用预沉积焊料或预制件。针对这些应用,金-硅(Au-Si)界面通过在>400C温度下擦洗裸片来创建。在高温下,硅扩散到金中;擦洗运动最小化Au-Si界面中的空隙或气穴。空隙在裸片通电时导致裸片上的热点,从而导致故障。针对这些应用,裸片经减薄(50um或更小)以使其更有效散热。在此类应用中,(当擦洗裸片到衬底时),如果接触不是平面,那么Au-Si扩散仅在接触点/区域中发生,从而在后续工艺中将线接合到其时或在裸片通电时导致裸片故障。
热压接合是将裸片附接到衬底的常见方法。虽然术语“热压接合”通常指代具有特定属性、通常涉及相对高力(即,>>1kg)且最常使用的特定裸片附接工艺(其中裸片具有需要最小力(以克/凸块为单位)来变平以在加热到回流温度之前与下方衬底接触的数千个焊料凸块),但所述术语在本文中还更广泛用于指代裸片附接工艺。接合头与衬底之间的平面度对此工艺以及确保所有凸块与下方的其对应连接垫接触及在不附接/桥接到其相邻凸块的情况下均匀回流来说至关重要。
负责将裸片放置于衬底上的机器称为裸片放置系统、热压接合系统及有时“裸片接合器”,而将裸片放置到衬底或印刷电路板上在行业中通常称为裸片放置、裸片附接或裸片接合操作。在裸片放置操作期间,裸片定位必须十分精确及准确以确保裸片与衬底之间的互连适当建立。
虽然这些技术多年来一直为行业提供良好的服务,但现存裸片接合系统及方法在用于将最近几代裸片接合到衬底时无法实现令人满意的接合性能及良率。这些新几代的裸片及衬底在裸片与衬底之间利用增加数目的连接、焊料凸块或其它,通常无需对应地增大裸片或衬底的大小。为了允许类似大小的裸片适应这些额外连接,每一连接变得更小且放置准确度(包含平面度)变得更关键。例如,在光子封装的较新设计中,预沉积焊料层的厚度极薄。因此,裸片与衬底平面度需要控制到比以往任何时候都要高的程度以确保裸片上的所有焊料垫均匀回流。
此外,裸片有时可在大小、厚度、平面度等方面显著不同,但必须仍用均匀分布的一致、精确及准确力量来放置。举例来说,当将裸片放置于环氧树脂上时,至关重要的是,在放置之后,满足环氧树脂接合线厚度准则。当在共晶附接工艺中放置极薄裸片(即,50um或更小)时,冲击力如果太高,那么会导致裸片破裂。此类放置操作的误差容限相当小且即使平均力在可接受限制内,但始终存在的裸片与衬底之间的平面度误差仍可导致高局部力导致故障。不幸的是,确保平面度的当前方法通常由于需要重新校准每一裸片或使用无法顾及导致未对准的裸片间变化的单次校准而导致循环时间减慢。
举例来说,一种当前可用解决方案涉及使用安装到万向节的尖端,其可称为万向节尖端。虽然对确保平面度有帮助,但此解决方案无法防止裸片擦洗,因为旋转轴不在裸片的底部处,从而导致在放置期间裸片与衬底之间相对运动,这会损坏这些易碎结构。此外,当前设计需要最小力(通常>30克)来迫使万向节自调平,这会损坏裸片/衬底及/或限制放置准确度。
此外,在许多例子中,此类操作的挑战由于需要裸片放置系统将通常彼此不同的多个裸片放置于单个衬底上而增加。由于不同类型的裸片的大小或形状不均匀,因此裸片放置头(其在本文中还称为尖端主体、与裸片本身接触且通常最终负责其精确放置(在一些机器中,衬底θ定向可调整)的裸片放置系统的部分)特定于待放置的每一类型的裸片。在此类情形中,裸片放置头在裸片放置操作期间必须与对应于在下一裸片放置操作可继续之前放置的下一裸片类型的裸片放置头交换。
裸片放置头的此交换可为手动或自动的。手动方法需要人类操作者打开机器及随后交换裸片放置头,而自动交换通常通过将裸片放置头移动到工具载体及用对应于待放置的下一裸片的裸片放置头换出裸片放置头来完成。裸片放置头的手动及自动两种交换减慢裸片放置工艺且手动裸片放置头交换还造成重大污染风险,因为必须打开系统来进行交换操作。虽然裸片放置头的自动交换比手动裸片放置头交换更快,但其仍需要裸片放置头在系统内行进大量距离,从而由于追踪问题(例如漂移)而导致可能损失放置准确度且由于花费在横穿此距离上的时间而导致循环时间增加。
如今,由于各种高密度裸片封装设计已可用且每天仍在开发更多,因此对裸片放置系统的要求在增加。当代裸片需要裸片接合装备,其可提供超越当前可用于最大化生产率的精度、多功能性及速度,同时最小化由错误裸片放置导致的缺陷,鉴于在生产工艺中此时已进入创建及测试裸片的努力,这是一个特别大的问题。未来几代裸片很可能对裸片放置装备提出更高要求。
因此,需要用于通过确保裸片与衬底之间的平面度及最小化致使裸片及衬底平整所需的力同时最小化擦洗及加速裸片放置工艺(包含其中多个裸片必须放置于单个衬底上的情形)来改进裸片放置的准确度、精度及一致性及裸片放置力施加的技术。
发明内容
一种新颖尖端主体在无需在每一拾取及放置操作之前进行校准的情况下确保裸片与衬底的平面度。在不同配置中,相同尖端主体在接合操作期间在裸片与衬底之间提供完全角顺应性,从而允许强及准确接合,即使两者显著非平面。
实施例还利用裸片头安装转台来加快循环时间且降低与重复打开裸片接合系统来手动更换尖端相关联的污染风险。
本公开的一个实施例提供一种自对准尖端系统,其包括:尖端固持器,其包括安置于其远端上的螺纹区段及中空内腔;可锁定转环,其安置于所述尖端固持器的所述中空内腔中,所述可锁定转环包括经配置以保持尖端的中心孔;及锁定帽,其包括经配置以允许尖端从中穿过的中心孔,其中所述锁定帽经配置以螺合到所述尖端固持器的所述螺纹区段上及使所述可锁定转环保持于所述尖端固持器的所述内腔内部,其中当所述锁定帽松动安装时,允许保持于所述可锁定转环中的尖端翻滚、俯仰及偏摆旋转,同时维持准确θ配准,及其中当所述锁定帽紧固安装时,保持于所述可锁定转环中的尖端在翻滚、俯仰及偏摆方面锁定。
本公开的另一实施例提供此自对准尖端系统,其中所述尖端固持器包括经配置以保持于裸片接合系统中的上区段。
本公开的另一实施例提供此自对准尖端系统,其中所述可锁定转环在其顶侧及底侧上包括转球轮廓,且其中所述尖端固持器及锁定帽分别在其底部及顶部上包括对应转球轮廓。
本公开的又一实施例提供此自对准尖端系统,其进一步包括安置于所述可锁定转环与锁定帽之间的弹簧。
本公开的又另一实施例提供此自对准尖端系统,其中所述锁定帽及可锁定转环包括经配置以定位所述弹簧的弹簧座。
本公开的又另一实施例提供此自对准尖端系统,其中所述弹簧经配置以将固持保持于所述可锁定转环中的尖端偏置到中性位置。
本公开的又另一实施例提供此自对准尖端系统,其进一步包括安置于所述尖端固持器中的磁体。
本公开的又另一实施例提供此自对准尖端系统,其中所述磁体经配置以将固持保持于所述可锁定转环中的尖端偏置到中性位置。
本公开的又另一实施例提供此自对准尖端系统,其进一步包括安置于所述尖端固持器中的磁体。
本公开的又另一实施例提供此自对准尖端系统,其中所述磁体经配置以将固持保持于所述可锁定转环中的尖端偏置到中性位置。
本公开的又另一实施例提供此自对准尖端系统,其中所述自对准尖端系统经配置使得尖端对准发生在定位于由所述可锁定转环保持的尖端固持的裸片的底部处的旋转中心。
本公开的又另一实施例提供此自对准尖端系统,其进一步包括安置于所述尖端固持器中的至少一个通气口。
本公开的又另一实施例提供此自对准尖端系统,其中所述自对准尖端系统经配置以利用真空将所述尖端锁定到适当位置中。
本公开的又另一实施例提供此自对准尖端系统,其进一步包括保持于所述可锁定转环中的尖端,其中所述尖端包括经配置以允许正压力及/或真空从所述尖端的背侧传输到其远端的至少一个通气口,所述远端经配置以将裸片安装到衬底。
本公开的又另一实施例提供此自对准尖端系统,其中当所述尖端处于未锁定位置中时,所述尖端经配置以利用通过安置于其中的所述至少一个通气口的突然或稳定气流来减少与尖端对准相关联的摩擦。
本公开的又另一实施例提供此自对准尖端系统,其中所述可锁定转环利用夹圈保持系统来保持尖端。
本公开的又另一实施例提供此自对准尖端系统,其中所述锁定帽进一步包括经配置以防止所述可锁定转环在拧紧之后相对于所述自对准尖端系统旋转的预载锁定片。
本公开的一个实施例提供一种使尖端与衬底平整的方法,所述方法包括:使用本文中描述的自对准尖端系统:使尖端保持于所述可锁定转环内;松释所述锁定帽,借此允许所述尖端翻滚、俯仰及偏摆旋转,同时维持准确θ配准;使所述尖端与所述衬底接触;及拧紧所述锁定帽,借此锁定所述尖端的翻滚、俯仰及偏摆。
本公开的一个实施例提供一种裸片接合系统,其包括:转台,其包括旋转测量装置及基本上邻近其外围定位的多个自对准尖端系统固持部分,其中每一自对准尖端系统固持部分包括两个同心孔:第一孔及第二孔,所述第一孔完全延伸穿过所述转台且所述第二孔定位于与所述第一孔相对且与其同心的所述转台的侧上,其中所述第二孔仅部分延伸到所述转台中,且其中在旋转之后,所述多个自对准尖端系统固持孔中的每一者可与工具对准;及电动机,其经配置以在激活之后旋转所述转台,其中所述多个自对准尖端系统固持部分中的至少一者包括自对准尖端系统。
本公开的一个实施例提供一种自对准尖端系统,其包括:尖端固持器,其包括至少一个通气口、安置于其远端上的螺纹区段及中空内腔;可锁定转环,其包括经配置以保持尖端的中心孔;锁定帽,其安置于所述尖端固持器的所述中空内腔中,所述可锁定转环包括经配置以允许尖端从中穿过的中心孔,其中所述锁定帽经配置以螺合到所述尖端固持器的所述螺纹区段上及使所述可锁定转环保持于所述尖端固持器的所述内腔内部;及弹簧,其安置于所述可锁定转环与锁定帽之间,其中当所述锁定帽松动安装时,允许保持于所述可锁定转环中的尖端翻滚、俯仰及偏摆旋转,同时维持准确θ配准,其中当所述锁定帽紧固安装时,保持于所述可锁定转环中的尖端在翻滚、俯仰及偏摆方面锁定,其中所述尖端固持器包括经配置以保持于裸片接合系统中的上区段,其中所述弹簧经配置以将固持保持于所述可锁定转环中的尖端偏置到中性位置,其中所述可锁定转环在其顶侧及底侧上包括转球轮廓,且其中所述尖端固持器及锁定帽分别在其底部及顶部上包括对应转球轮廓。
本文中描述的特征及优势不是无所不包,且特定来说,所属领域的一般技术人员将鉴于图式、说明书及权利要求书来明白许多额外特征及优势。此外,应注意,说明书中使用的语言已主要为了可读性及教学目的而选择且不限制发明标的物的范围。
附图说明
图1是根据本公开的实施例的展示其解剖结构的使用耦合式抗旋转特征的自对准尖端系统的截面图,其中尖端锁定于中性位置中;
图2是根据本公开的实施例的使用耦合式抗旋转特征的自对准尖端系统的分解图;
图3是根据本公开的实施例的使用耦合式抗旋转特征的自对准尖端系统的分解图;
图4是根据本公开的实施例的使用销式抗旋转特征的自对准尖端系统的分解图;
图5是根据本公开的实施例的使用销式抗旋转特征的自对准尖端系统的分解图;
图6是展示根据本公开的实施例的使用销式抗旋转特征的自对准尖端系统的示意图,其中尖端锁定于中性位置中;
图7是展示根据本公开的实施例的使用耦合式抗旋转特征的自对准尖端系统的示意图,其中尖端锁定于倾斜位置中;
图8是展示根据本公开的实施例的使用耦合式抗旋转特征的自对准尖端系统的示意图,其中尖端呈未锁定配置;
图9是展示根据本公开的实施例的使用耦合式抗旋转特征的自对准尖端系统的示意图,其中尖端锁定于中性位置中,所述系统包含经配置以将尖端偏置到中性位置中的磁体;
图10是根据本公开的实施例的锁定帽的截面图;
图11是根据本公开的实施例的可锁定转环的截面图;
图12是根据本公开的实施例的尖端固持器的截面图;
图13是根据本公开的实施例的由包含锁定帽的尖端固持器固持的尖端的侧视图;
图14是根据本公开的实施例的由包含锁定帽的尖端固持器固持的尖端的透视图;及
图15是根据本公开的实施例的由转台固持的自对准尖端系统的透视图。
将通过阅读与本文中描述的诸图一起进行的以下详细描述来更好理解本发明实施例的这些及其它特征。附图不希望按比例绘制。为清楚起见,可不在每个图式中标记每个组件。
具体实施方式
作为初步事项,为了本公开,X、Y及Z轴应被理解为指代三个正交线性轴,而“T”(其也可称为西塔或θ)指代转动轴。
热压接合是一种用于将裸片(还称为芯片)接合到衬底的方法。其有时也称为扩散接合、压力联接、热压焊接或固态焊接。此工艺利用表面扩散、晶界扩散及体扩散来将裸片物理及电连接到衬底。
在拾取及放置机械装置及客户裸片/衬底两者中总是存在平面度误差。这些误差使裸片到衬底的稳健附接一直是一个挑战,尤其当未使用焊料或预制件(例如某些类型的共晶接合)时。本公开的实施例通过采用对拾取及放置龙门架/甲床工具进行全局平面度校正以及使用完全柔性尖端104帮助解决客户的裸片及衬底的不同平面度误差的选项两者来解决此问题。
在实施例中,本文中描述的裸片放置系统利用一种新颖自对准尖端系统100以在无需在每一拾取及放置操作之前进行校准的情况下确保裸片与衬底的平面度。更明确来说,实施例利用由自对准尖端系统100可调整地但可锁定地保持的尖端固持器102固持的尖端104来帮助裸片放置/附接。此自对准尖端系统100提供可存在于裸片与衬底之间的平面度误差的全局校正,不论这些误差是源于龙门架未对准(即,裸片侧未对准)还是机器甲板工具未对准(即,衬底侧未对准)。在实施例中,这通过尖端104自对准到具有非平行顶面及底面的裸片来完成。
现参考图1,展示根据本公开的实施例的自对准尖端系统100的解剖结构。更明确来说,自对准尖端系统100经配置以保持尖端104以允许尖端104完全翻滚、俯仰及偏摆旋转,同时维持准确θ配准,借此确保由尖端104固持的裸片与其附装于其上的衬底成平面。实施例使用可锁定转环114及在实施例中具有安置于锁定帽106、尖端固持器102及可锁定转环114中的元件的转球系统来实现θ配准以允许尖端104与自对准尖端系统100之间相对运动。图2及3中提供更好展示组件如何配合及一起工作的分解图。
在实施例中,尖端固持器102包括至少一个(在实施例中,多个)通气口108,其经配置以允许真空及/或正压力通过尖端固持器102传递到固持于其中的尖端104,从而尤其允许尖端104以编程方式锁定或浮动。
在实施例中,通气口108进一步允许真空及/或正压力通过安装于其中的尖端104传递,从而尤其允许裸片经由真空固持到尖端104。通过使用正压力,空气施加作用于弹簧座式转球轮廓以帮助尖端104浮动成与裸片的表面配合。在此类实施例中,真空还可用于将尖端104锁定到适当位置中。
在实施例(例如图1到3中描绘的实施例)中,尖端固持器102包括经配置以允许尖端104完全翻滚、俯仰及偏摆旋转同时维持准确θ配准的耦合器112,在实施例中,万向接头盘112。实施例的耦合器112利用部分松动地定位于尖端固持器102中且部分定位于可锁定转环114中以允许两者之间相对运动的多个销110。在实施例中,开槽盘112被插入于尖端固持器102与可锁定转环114之间。
在其它实施例(例如图4及5中描绘的实施例)中,包括至少一个定位销110以旋转地固定可锁定转环114,在实施例中外加先前描述的耦合器112及在其它实施例中代替耦合器112,同时仍允许尖端104完全翻滚、俯仰及偏摆旋转且维持准确θ配准。
图6及7中描绘尖端104完全翻滚、俯仰及偏摆旋转同时维持准确θ配准的前述能力,图6及7分别展示锁定于中性位置中的自对准尖端系统100的销式实施例及锁定于倾斜位置中的自对准尖端系统100的耦合式实施例。如参考图中可见,当锁定帽106拧紧时,内部弹簧116压缩且锁定帽106、可锁定转环114及尖端固持器102之间没有间隙,从而有效锁定成角对准。
在实施例中,尖端固持器102经定大小以容纳标准尖端104,从而允许其与现成部件一起使用。
在实施例中,自对准尖端系统100具有在自对准模式中运行以进行每一个别拾取的能力或可在“锁定模式”中对准及锁定以在非水平面上进行全局放置。在实施例中,此尖端锁定特征通过拧紧锁定帽106来实现,在实施例中,锁定帽106是滚花帽106,其经配置以螺合到尖端固持器102上且经配置以夹紧所有旋转接合面(即,将可锁定转环114的内侧表面夹紧到安置于锁定帽106的背侧中的转球轮廓及将可锁定转环114的外侧表面夹紧到安置于尖端固持器102中的转球轮廓)以将其锁定在一起。此特征在图8中最好说明,图8描绘自对准尖端系统100处于未锁定状态中(即,锁定帽106相对松动,从而允许内部弹簧116将可锁定转环114、安置于尖端固持器102中的转球轮廓及安置于锁定帽106的背侧中的转球轮廓的对应表面推开)以允许尖端104在裸片接合操作期间自对准。更明确来说,当锁定帽106松释时,弹簧116解压缩且可锁定转环114与邻近元件之间存在间隙,从而允许尖端104与尖端固持器102之间的角度改变。在此配置中,弹簧116使相关转球轮廓保持朝向中性位置就坐及偏置。
在实施例中,当尖端104处于未锁定位置中时,尖端104经配置以利用通过尖端104中的通气口108的突然或稳定气流来创建无摩擦尖端104对准,从而减小使尖端104抵靠裸片的顶部就坐通常所需的向下力。替代地,真空可接着用于将尖端104暂时锁定到适当位置中。
在实施例中,尖端104对准发生在定位于裸片的底部处的旋转中心以帮助减轻裸片擦洗(即,在裸片与尖端104接触时X及/或Y方向上的相对运动)。在处理不同厚度裸片时可通过定制来使旋转中心的其它位置可用。在实施例中,旋转中心的定制通过改变可锁定转环114、尖端固持器102及/或安置于锁定帽106的背侧中的转球轮廓的形状来完成。
在实施例中,内部弹簧116使自对准尖端系统100偏置以在裸片放置之后返回到中性位置。
在实施例(例如图9中描绘的实施例)中,自对准尖端系统100采用使用安置于尖端固持器102中的磁体900的磁中性回路900代替弹簧116或作为弹簧116的补充。此类实施例的磁体900本质上提供与弹簧116相同的功能,但可允许在一些情况下更灵活操作。在实施例中,使用磁体900,不使用弹簧116。
在实施例中,尖端104使用夹圈类型的尖端保持,其中可锁定转环114用作夹钳,从而允许使用大量现成标准尖端104。在实施例中,锁定帽106包含预载锁定片,预载锁定片经配置以防止可锁定转环114在拧紧时相对于自对准尖端系统100旋转。
此设计允许拾取及放置或裸片接合系统、机器龙门架及甲板工具的平面度不那么完美。这可通过仅将尖端104平整到需要补偿的表面以确保平面度及拧紧锁定帽106以捕获那个位置来实现。
设计还允许客户制造具有比通常仅通过松释锁定帽106及在可锁定转环114的顺应性限制内允许尖端104进入完全角顺应模式中来允许的平面度误差更大的平面度误差的裸片/衬底,在完全角顺应模式中,尖端104在每一裸片接合操作中自动将由尖端104固持的裸片平整到衬底。
图10、11及12中提供组成前述组合件的个别组件的视图。
更明确来说,图10描绘根据本公开的实施例的可锁定帽106,其具有经配置以与安置于可锁定转环114中的内部转球轮廓配合的内部转球轮廓。
现参考图11,展示、描绘根据本公开的实施例的包括内部转球轮廓及外部转球轮廓的可锁定转环114,其还包含经配置以保持尖端104的集成夹圈。
图12展示根据本公开的实施例的包含经配置以接收锁定帽106的螺纹部分的尖端固持器102的截面图。
现参考图13及14,这些图将实施例的自对准尖端系统100展示为立体图,从而详述其外观。
现参考图15,例如图15中描绘的实施例的实施例提供热压接合系统,其包含在裸片放置循环期间允许由单个裸片放置系统进行多个裸片类型的高效放置的经改进裸片放置系统,从而导致循环时间及准确度改进。这通过最小化裸片放置系统在涉及将多个裸片放置于单个衬底上的操作中的移动来完成,其中尖端104必须进行交换以通过将裸片放置头固持转台1500、工具的旋转固持器并入到裸片放置系统中来适应不同大小的裸片。在实施例中,此系统的转台1500承载多个自对准尖端系统100,其中每一自对准尖端系统100承载特定应用中需要使用的尖端104,无需裸片放置系统在涉及不同大小裸片的裸片放置操作之间返回到传统工具固持器。在实施例中,转台1500可并入永久磁体、电磁体、真空通道或其组合以在不使用时保持自对准尖端系统100。所属领域的一般技术人员将明白使自对准尖端系统100保持于转台1500内的其它合适构件。
已为了说明及描述而呈现本公开的实施例的以上描述。其不希望是详尽的或将本公开限制于所公开的精确形式。可鉴于本公开进行许多修改及变化。希望本公开的范围不受此详细描述限制,而是由所附权利要求书限制。
已描述数个实施方案。然而,应理解,可在不背离本公开的范围的情况下做出各种修改。尽管操作在图式中以特定顺序描绘,此不应理解为要求此类操作以所展示的特定顺序或以循序顺序执行或执行所有说明操作以实现期望结果。
Claims (20)
1.一种自对准尖端系统,其包括:
尖端固持器,其包括安置于其远端上的螺纹区段及中空内腔;
可锁定转环,其安置于所述尖端固持器的所述中空内腔中,所述可锁定转环包括经配置以保持尖端的中心孔;及
锁定帽,其包括经配置以允许尖端从中穿过的中心孔,其中所述锁定帽经配置以螺合到所述尖端固持器的所述螺纹区段上及使所述可锁定转环保持于所述尖端固持器的所述内腔内部,
其中当所述锁定帽松动安装时,允许保持于所述可锁定转环中的尖端翻滚、俯仰及偏摆旋转,同时维持准确θ配准,且
其中当所述锁定帽紧固安装时,保持于所述可锁定转环中的尖端在翻滚、俯仰及偏摆方面锁定。
2.根据权利要求1所述的自对准尖端系统,其中所述尖端固持器包括经配置以保持于裸片接合系统中的上区段。
3.根据权利要求1所述的自对准尖端系统,其中所述可锁定转环在其顶侧及底侧上包括转球轮廓,且其中所述尖端固持器及锁定帽分别在其底部及顶部上包括对应转球轮廓。
4.根据权利要求1所述的自对准尖端系统,其进一步包括安置于所述可锁定转环与锁定帽之间的弹簧。
5.根据权利要求4所述的自对准尖端系统,其中所述锁定帽及可锁定转环包括经配置以定位所述弹簧的弹簧座。
6.根据权利要求4所述的自对准尖端系统,其中所述弹簧经配置以将固持保持于所述可锁定转环中的尖端偏置到中性位置。
7.根据权利要求4所述的自对准尖端系统,其进一步包括安置于所述尖端固持器中的磁体。
8.根据权利要求7所述的自对准尖端系统,其中所述磁体经配置以将固持保持于所述可锁定转环中的尖端偏置到中性位置。
9.根据权利要求1所述的自对准尖端系统,其进一步包括安置于所述尖端固持器中的磁体。
10.根据权利要求9所述的自对准尖端系统,其中所述磁体经配置以将固持保持于所述可锁定转环中的尖端偏置到中性位置。
11.根据权利要求1所述的自对准尖端系统,其中所述自对准尖端系统经配置使得尖端对准发生在定位于由所述可锁定转环保持的尖端固持的裸片的底部处的旋转中心。
12.根据权利要求1所述的自对准尖端系统,其进一步包括安置于所述尖端固持器中的至少一个通气口。
13.根据权利要求12所述的自对准尖端系统,其中所述自对准尖端系统经配置以利用真空将所述尖端锁定到适当位置中。
14.根据权利要求1所述的自对准尖端系统,其进一步包括保持于所述可锁定转环中的尖端,其中所述尖端包括经配置以允许正压力及/或真空从所述尖端的背侧传输到其远端的至少一个通气口,所述远端经配置以将裸片安装到衬底。
15.根据权利要求14所述的自对准尖端系统,其中当所述尖端处于未锁定位置中时,所述尖端经配置以利用通过安置于其中的所述至少一个通气口的突然或稳定气流来减少与尖端对准相关联的摩擦。
16.根据权利要求1所述的自对准尖端系统,其中所述可锁定转环利用夹圈保持系统来保持尖端。
17.根据权利要求1所述的自对准尖端系统,其中所述锁定帽进一步包括经配置以防止所述可锁定转环在拧紧之后相对于所述自对准尖端系统旋转的预载锁定片。
18.一种使尖端与衬底平整的方法,所述方法包括:
使用根据权利要求1所述的自对准尖端系统:
使尖端保持于所述可锁定转环内;
松释所述锁定帽,借此允许所述尖端翻滚、俯仰及偏摆旋转,同时维持准确θ配准;
使所述尖端与所述衬底接触;及
拧紧所述锁定帽,借此锁定所述尖端的翻滚、俯仰及偏摆。
19.一种裸片接合系统,其包括:
转台,其包括旋转测量装置及基本上邻近其外围定位的多个自对准尖端系统固持部分,其中每一自对准尖端系统固持部分包括两个同心孔:第一孔及第二孔,所述第一孔完全延伸穿过所述转台且所述第二孔定位于与所述第一孔相对且与其同心的所述转台的侧上,其中所述第二孔仅部分延伸到所述转台中,且其中在旋转之后,所述多个自对准尖端系统固持孔中的每一者能够与工具对准;及
电动机,其经配置以在激活之后旋转所述转台,
其中所述多个自对准尖端系统固持部分中的至少一者包括自对准尖端系统。
20.一种自对准尖端系统,其包括:
尖端固持器,其包括至少一个通气口、安置于其远端上的螺纹区段及中空内腔;
可锁定转环,其包括经配置以保持尖端的中心孔;
锁定帽,其安置于所述尖端固持器的所述中空内腔中,所述可锁定转环包括经配置以允许尖端从中穿过的中心孔,其中所述锁定帽经配置以螺合到所述尖端固持器的所述螺纹区段上及使所述可锁定转环保持于所述尖端固持器的所述内腔内部;及
弹簧,其安置于所述可锁定转环与锁定帽之间,
其中当所述锁定帽松动安装时,允许保持于所述可锁定转环中的尖端翻滚、俯仰及偏摆旋转,同时维持准确θ配准,
其中当所述锁定帽紧固安装时,保持于所述可锁定转环中的尖端在翻滚、俯仰及偏摆方面锁定,
其中所述尖端固持器包括经配置以保持于裸片接合系统中的上区段,
其中所述弹簧经配置以将固持保持于所述可锁定转环中的尖端偏置到中性位置,其中所述可锁定转环在其顶侧及底侧上包括转球轮廓,且其中所述尖端固持器及锁定帽分别在其底部及顶部上包括对应转球轮廓。
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