CN116075869A - 指纹识别模组、其制作方法及显示装置 - Google Patents
指纹识别模组、其制作方法及显示装置 Download PDFInfo
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- CN116075869A CN116075869A CN202080002117.7A CN202080002117A CN116075869A CN 116075869 A CN116075869 A CN 116075869A CN 202080002117 A CN202080002117 A CN 202080002117A CN 116075869 A CN116075869 A CN 116075869A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 140
- 230000003287 optical effect Effects 0.000 claims abstract description 79
- 230000005540 biological transmission Effects 0.000 claims abstract description 36
- 239000010410 layer Substances 0.000 claims description 423
- 238000000034 method Methods 0.000 claims description 26
- 238000001914 filtration Methods 0.000 claims description 15
- 239000012790 adhesive layer Substances 0.000 claims description 13
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 3
- 239000004568 cement Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
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- Microelectronics & Electronic Packaging (AREA)
- Human Computer Interaction (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Image Input (AREA)
- Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
一种指纹识别模组、其制作方法及显示装置,包括:衬底基板01;图像传感层02,包括位于衬底基板01之上的多个光敏器件201;准直光学层03,位于多个光敏器件201的入光侧;准直光学层03包括多个透光孔H,多个透光孔H与部分光敏器件201一一对应设置,且透光孔H在衬底基板01上的正投影位于对应设置的光敏器件201的正投影内;导光层04,位于准直光学层03背离多个光敏器件201的一侧;导光层04包括多个微透镜401,每一个微透镜401在衬底基板01上的正投影完全覆盖一个透光孔H及至少两个光敏器件201的正投影,且每一个微透镜401被配置为将手指反射的光线汇聚后经其所覆盖的透光孔H传输至其所覆盖的一个光敏器件201。
Description
PCT国内申请,说明书已公开。
Claims (20)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2020/117904 WO2022061769A1 (zh) | 2020-09-25 | 2020-09-25 | 指纹识别模组、其制作方法及显示装置 |
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Publication Number | Publication Date |
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CN116075869A true CN116075869A (zh) | 2023-05-05 |
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ID=80844684
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Application Number | Title | Priority Date | Filing Date |
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CN202080002117.7A Pending CN116075869A (zh) | 2020-09-25 | 2020-09-25 | 指纹识别模组、其制作方法及显示装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20220320170A1 (zh) |
CN (1) | CN116075869A (zh) |
WO (1) | WO2022061769A1 (zh) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8204283B2 (en) * | 2009-01-16 | 2012-06-19 | Gingy Technology Inc. | Fingerprint input module |
WO2021007964A1 (zh) * | 2019-07-12 | 2021-01-21 | 深圳市汇顶科技股份有限公司 | 指纹检测装置和电子设备 |
CN210924598U (zh) * | 2019-09-30 | 2020-07-03 | 指纹卡有限公司 | 生物识别成像装置和电子装置 |
CN111626100B (zh) * | 2020-03-26 | 2024-02-02 | 天津极豪科技有限公司 | 屏下指纹装置及显示模组 |
CN111523440B (zh) * | 2020-04-21 | 2023-10-27 | 上海思立微电子科技有限公司 | 屏下光学指纹识别装置 |
-
2020
- 2020-09-25 WO PCT/CN2020/117904 patent/WO2022061769A1/zh active Application Filing
- 2020-09-25 US US17/419,835 patent/US20220320170A1/en active Pending
- 2020-09-25 CN CN202080002117.7A patent/CN116075869A/zh active Pending
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Publication number | Publication date |
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US20220320170A1 (en) | 2022-10-06 |
WO2022061769A1 (zh) | 2022-03-31 |
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