CN116065156A - Low-threshold potential polarity drainer - Google Patents
Low-threshold potential polarity drainer Download PDFInfo
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- CN116065156A CN116065156A CN202211703642.9A CN202211703642A CN116065156A CN 116065156 A CN116065156 A CN 116065156A CN 202211703642 A CN202211703642 A CN 202211703642A CN 116065156 A CN116065156 A CN 116065156A
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- 235000014676 Phragmites communis Nutrition 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 230000009977 dual effect Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004210 cathodic protection Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005536 corrosion prevention Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F13/00—Inhibiting corrosion of metals by anodic or cathodic protection
- C23F13/02—Inhibiting corrosion of metals by anodic or cathodic protection cathodic; Selection of conditions, parameters or procedures for cathodic protection, e.g. of electrical conditions
- C23F13/06—Constructional parts, or assemblies of cathodic-protection apparatus
- C23F13/08—Electrodes specially adapted for inhibiting corrosion by cathodic protection; Manufacture thereof; Conducting electric current thereto
- C23F13/20—Conducting electric current to electrodes
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L58/00—Protection of pipes or pipe fittings against corrosion or incrustation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F2213/00—Aspects of inhibiting corrosion of metals by anodic or cathodic protection
- C23F2213/10—Controlling or regulating parameters
- C23F2213/11—Controlling or regulating parameters for structures subject to stray currents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F2213/00—Aspects of inhibiting corrosion of metals by anodic or cathodic protection
- C23F2213/30—Anodic or cathodic protection specially adapted for a specific object
- C23F2213/32—Pipes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electronic Switches (AREA)
Abstract
The invention provides a low threshold potential polarity drainer, comprising: the protection circuit, the alternating current path and the active MOS tube are sequentially connected in parallel; under the condition that the source voltage is larger than the drain voltage, the grid electrode of the active MOS tube receives a high level, and the active MOS tube is conducted to realize a drainage function. The low-threshold potential polarity drainer provided by the invention has the advantages that the threshold potential and the internal resistance are far lower than those of the conventional drainer, the core performance is excellent, the loss of the drive voltage for providing cathode protection for the sacrificial anode is small, the forward drain current of the sacrificial anode flowing to the ground can be ensured, the full cathode protection drive voltage is provided, and the dual functions of the sacrificial anode drain and the cathode protection are better exerted.
Description
Technical Field
The invention relates to the field of computers, in particular to a low-threshold potential polarity drainer.
Background
With the extension of the service time of the urban underground gas pipe network and the increasing complexity of the service environment, the cathode protection condition and the corrosion prevention condition of the whole pipeline are not optimistic. Due to the limitation of urban geographic positions, the phenomenon that subways and gas pipelines are crossed or paved in parallel is more and more common, so that stray currents around the gas pipelines are more and more, the risk of dynamic direct current interference is more and more serious, the electric potentials of a plurality of pipelines are greatly fluctuated, the fluctuation amplitude can reach several volts to tens of volts, and great corrosion risks exist.
In order to relieve subway direct current interference, urban gas pipelines mostly adopt relieving measures of combining a sacrificial anode and a polar drainer, wherein the polar drainer enables stray current to flow to the outside only from the pipeline to the sacrificial anode and cannot flow into the pipeline from the outside through the sacrificial anode, thereby realizing drainage effect and avoiding the stray current from flowing into the pipeline from the sacrificial anode. However, the conventional polar drainer causes a voltage drop of about 0.3V between the sacrificial anode and the pipe even when turned on, so that the forward drain current of the sacrificial anode to the ground is reduced, and in addition, the driving voltage of the sacrificial anode for providing cathodic protection is weakened, and the cathodic protection effect of the sacrificial anode is weakened. Because the generated voltage drop dissipates in the form of heat, if the drainage current is larger, the heat power generated on the equipment is correspondingly improved, which has higher requirements on the heat dissipation mode of the equipment, so that the problems of equipment damage and the like caused by overload and the like of the traditional polar drainage equipment are often caused by the fact that the heat exceeds the design range.
Disclosure of Invention
The present invention aims to provide a low threshold potential polarity drain that overcomes or at least partially solves the above-mentioned problems.
In order to achieve the above purpose, the technical scheme of the invention is specifically realized as follows:
the invention provides a low threshold potential polarity drainer, comprising: the protection circuit, the alternating current path and the active MOS tube are connected in parallel; the grid electrode of the active MOS tube receives a high level under the condition that the source voltage is larger than the drain voltage, and the active MOS tube is conducted to realize a drainage function.
And when the high-power MOSFET is completely conducted, the conducting voltage drop is smaller than a preset value.
Wherein, active MOS pipe includes: high power MOSFETs and MOSFET controllers; the MOSFET controller IN pin is connected with the source electrode of the high-power MOSFET, and the MOSFET controller OUT pin is connected with the drain electrode of the high-power MOSFET; and when the MOSFET controller judges that the IN pin voltage is larger than the OUT pin voltage, outputting a high level to the grid electrode of the high-power MOSFET at the GATE pin, and driving the high-power MOSFET to be conducted so as to realize a drainage function.
Wherein, active MOS pipe includes: the device comprises a MOSFET, a first triode, a second triode and a differential circuit; the first triode and the second triode realize a comparator structure through the differential circuit; when the voltage of the source electrode of the MOSFET is larger than the voltage of the drain electrode, the grid electrode of the MOSFET is pulled up, and the MOSFET is conducted to realize a drainage function.
Wherein, active MOS pipe includes: MOSFET and drive integrated circuit, and peripheral circuit of the integrated circuit; the drive integrated circuit has a voltage difference comparison function, and the voltage difference of the source electrode and the drain electrode is compared to further control the charge and discharge of the grid electrode, so that the on and off control of the MOSFET is realized, and the drainage function is realized.
The active MOS tube is replaced by other active mode controllers matched with specific electronic switching elements, and the driving circuit of the active MOS tube realizes the control of the electronic switching elements by measuring the voltage difference between two ends of the active MOS tube, so that the drainage function is realized.
Wherein the electronic switching element includes: IGBTs, BJTs, or SCRs.
The active MOS tube is replaced by other active mode controllers matched with specific mechanical switch elements, the driving circuit of the active MOS tube realizes the control of the mechanical switch elements by measuring the voltage difference between two ends, and when the voltage difference is accumulated to a preset range, the mechanical switch elements are controlled to be turned on and off, so that the drainage function is realized.
Wherein the mechanical switching element comprises: a relay or a reed switch.
The protection circuit and the alternating current path are replaced according to different application scenes, and the protection circuit is canceled under a preset special scene.
Therefore, the low-threshold potential polarity drainer provided by the invention has the advantages that the threshold potential and the internal resistance are far lower than those of the conventional drainer, the core performance is excellent, the loss of the driving voltage for providing cathode protection for the sacrificial anode is low, the forward discharge current of the sacrificial anode to the ground can be ensured, the full cathode protection driving voltage is provided, and the dual functions of the sacrificial anode drainage and the cathode protection are better exerted.
Therefore, the invention can not only relieve the dynamic direct current interference, but also provide full cathode protection driving voltage, and better play the dual roles of sacrificial anode drainage and cathode protection.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a low threshold potential polarity drain according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a low threshold potential polarity drain according to an embodiment of the present invention;
fig. 3 is another schematic diagram of a low threshold potential polarity drain according to an embodiment of the present invention.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
Fig. 1 shows a schematic diagram of a low-threshold potential polarity drain provided by an embodiment of the present invention, referring to fig. 1, the low-threshold potential polarity drain provided by the embodiment of the present invention includes:
the protection circuit, the alternating current path and the active MOS tube are sequentially connected in parallel;
under the condition that the source voltage is larger than the drain voltage, the grid electrode of the active MOS tube receives a high level, and the active MOS tube is conducted to realize a drainage function.
In particular, conventional drains often employ schottky diodes as the dc unidirectional path. The principle of using the schottky diode is that the diode has unidirectional conduction characteristics, which also determines that the conventional current drain device cannot perform the current drain operation under the condition of small voltage difference.
As an alternative implementation manner of the embodiment of the present invention, when the high-power MOSFET is fully turned on, the turn-on voltage drop is smaller than a preset value. The preset value is less than the voltage drop of a conventional schottky diode.
The active MOS tube is used for replacing the Schottky diode, and the diode is conducted to a voltage difference mV stage; reducing the sacrificial anode driving voltage loss; meanwhile, the internal resistance is low, the on-state voltage is reduced, the output current is improved, and the protection range is enlarged; the volume is proper, which is equivalent to the conventional polar drainer. Therefore, the active MOS tube is utilized, the threshold potential and the internal resistance of the active MOS tube are far lower than those of a conventional drainage device, the core performance is excellent, the loss of the drive voltage for providing cathode protection for the sacrificial anode is small, the forward drainage current of the sacrificial anode to the ground can be ensured, the full cathode protection drive voltage is provided, and the dual functions of the drain and the cathode protection of the sacrificial anode are better exerted.
As an alternative implementation manner of the embodiment of the present invention, referring to fig. 2, the active MOS transistor includes: high power MOSFETs and MOSFET controllers; the IN pin of the MOSFET controller is connected with the source electrode of the high-power MOSFET, and the OUT pin of the MOSFET controller is connected with the drain electrode of the high-power MOSFET; when the MOSFET controller judges that the IN pin voltage is larger than the OUT pin voltage, a high level is output to the grid electrode of the high-power MOSFET at the GATE pin, and the high-power MOSFET is driven to be conducted so as to realize the drainage function.
Specifically, U1 is a high power MOSFET. U2 is a MOSFET controller. When the voltage of the S terminal of U1 is slightly higher than that of the D terminal, U2 is started, and high level is output on the GATE pin to drive U1 to be conducted. U1 reduces the forward conduction barrier of the body diode due to the increased gate voltage. When U1 is fully on, the on-state voltage drop only needs to take into account its resistive effect. The on-voltage drop is typically below 10mV at this point. The performance is far higher than that of the traditional schottky diode mode. Meanwhile, the reliability and the heating of the device are obviously improved due to the reduction of the conduction voltage drop.
As another alternative implementation manner of the embodiment of the present invention, referring to fig. 3, an active MOS transistor includes: the device comprises a MOSFET, a first triode, a second triode and a differential circuit; the first triode and the second triode realize a comparator structure through a differential circuit; when the voltage of the source electrode of the MOSFET is larger than the voltage of the drain electrode, the grid electrode of the MOSFET is pulled up, and the MOSFET is conducted to realize the drainage function.
Specifically, the double-triode realizes a comparator structure through a differential circuit. When the voltage of the 3 pin (S pole) of the MOSFET is greater than its 2 pin (D pole), the 1 pin (G pole) of the MOSFET is pulled high. At this time, the MOSFET is turned on to realize a drain function. Conversely, when the voltage of the 2 pin is higher than that of the 3 pin, the voltage of the 1 pin is pulled down, and the original path is disabled, so that the MOSFET carrier is exhausted, which is equivalent to the opening of the switch.
It can be seen that the MOSFET can achieve very low threshold drain action using an efficient driving scheme.
As yet another alternative implementation manner of the embodiment of the present invention, the active MOS transistor includes: MOSFET and drive integrated circuit, and peripheral circuit of the integrated circuit; the drive integrated circuit has a voltage difference comparison function, and the voltage difference of the source electrode and the drain electrode is compared, so that the charge and discharge of the grid electrode are controlled, the on and off control of the MOSFET is realized, and the drainage function is realized.
As another alternative implementation manner of the embodiment of the present invention, the active MOS transistor is replaced by another active mode controller, and is matched with a specific electronic switching element, and its driving circuit realizes control of the electronic switching element by measuring the voltage difference between two ends, so as to realize the drainage function. Wherein the electronic switching element includes: IGBTs, BJTs, or SCRs.
As a further alternative implementation manner of the embodiment of the invention, the active MOS tube is replaced by other active mode controllers matched with specific mechanical switching elements, the driving circuit of the active MOS tube realizes the control of the mechanical switching elements by measuring the voltage difference between two ends, and when the voltage difference is accumulated to a preset range, the conduction and the closing of the mechanical switching elements are controlled, so that the drainage function is realized. Wherein the mechanical switching element comprises: a relay or a reed switch.
As an optional implementation manner of the embodiment of the invention, the protection circuit and the alternating current path are replaced according to different application scenes, and the protection circuit is canceled under a preset special scene; when the indoor small-scale application is performed, the gas discharge tube is replaced by the TVS avalanche diode, and the protection effect on peaks caused by opening and closing is better.
The foregoing is merely exemplary of the present application and is not intended to limit the present application. Various modifications and changes may be made to the present application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc. which are within the spirit and principles of the present application are intended to be included within the scope of the claims of the present application.
Claims (10)
1. A low threshold potential polarity drain comprising:
the protection circuit, the alternating current path and the active MOS tube are connected in parallel;
the grid electrode of the active MOS tube receives a high level under the condition that the source voltage is larger than the drain voltage, and the active MOS tube is conducted to realize a drainage function.
2. The low threshold potential polarity drain according to claim 1, wherein,
and when the high-power MOSFET is fully conducted, the conducting voltage drop is smaller than a preset value.
3. The low threshold potential polarity drain of claim 1, wherein the active MOS transistor comprises: high power MOSFETs and MOSFET controllers;
the MOSFET controller IN pin is connected with the source electrode of the high-power MOSFET, and the MOSFET controller OUT pin is connected with the drain electrode of the high-power MOSFET;
and when the MOSFET controller judges that the IN pin voltage is larger than the OUT pin voltage, outputting a high level to the grid electrode of the high-power MOSFET at the GATE pin, and driving the high-power MOSFET to be conducted so as to realize a drainage function.
4. The low threshold potential polarity drain of claim 1, wherein the active MOS transistor comprises: the device comprises a MOSFET, a first triode, a second triode and a differential circuit;
the first triode and the second triode realize a comparator structure through the differential circuit;
when the voltage of the source electrode of the MOSFET is larger than the voltage of the drain electrode, the grid electrode of the MOSFET is pulled up, and the MOSFET is conducted to realize a drainage function.
5. The low threshold potential polarity drain of claim 1, wherein the active MOS transistor comprises: MOSFET and drive integrated circuit, and peripheral circuit of the integrated circuit;
the drive integrated circuit has a voltage difference comparison function, and the voltage difference of the source electrode and the drain electrode is compared to further control the charge and discharge of the grid electrode, so that the on and off control of the MOSFET is realized, and the drainage function is realized.
6. The low-threshold potential polarity drainage device according to claim 1, wherein the active MOS transistor is replaced by other active mode controllers matched with a specific electronic switching element, and a driving circuit of the active MOS transistor realizes control of the electronic switching element by measuring voltage difference between two ends, so that a drainage function is realized.
7. The low-threshold potential polarity drain according to claim 6, wherein said electronic switching element comprises: IGBTs, BJTs, or SCRs.
8. The low-threshold potential polarity drainer according to claim 1, wherein the active MOS transistor is replaced by another active mode controller, and is matched with a specific mechanical switching element, and the driving circuit thereof realizes the control of the mechanical switching element by measuring the voltage difference between two ends, and when the voltage difference is accumulated to a preset range, the mechanical switching element is controlled to be turned on and off, so as to realize the draining function.
9. The low-threshold potential polarity drain according to claim 8, wherein said mechanical switching element comprises: a relay or a reed switch.
10. The low-threshold potential polarity current ejector according to claim 1, wherein the protection circuit and the ac path are replaced according to different application scenarios, and the protection circuit is canceled in a preset special scenario.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211703642.9A CN116065156A (en) | 2022-12-29 | 2022-12-29 | Low-threshold potential polarity drainer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211703642.9A CN116065156A (en) | 2022-12-29 | 2022-12-29 | Low-threshold potential polarity drainer |
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| CN116065156A true CN116065156A (en) | 2023-05-05 |
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| CN202211703642.9A Pending CN116065156A (en) | 2022-12-29 | 2022-12-29 | Low-threshold potential polarity drainer |
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6212084B1 (en) * | 1999-05-17 | 2001-04-03 | Page Aerospace Limited | Active rectifier |
| US6347029B1 (en) * | 1999-07-02 | 2002-02-12 | Dmel, Inc. | Over-current protection circuit for linear voltage regulators |
| WO2005020286A2 (en) * | 2003-08-19 | 2005-03-03 | International Rectifier Corporation | Active oring controller for redundant power systems |
| CN201036995Y (en) * | 2007-04-30 | 2008-03-19 | 中国矿业大学 | Direct current railway intelligent draining device |
| CN202405774U (en) * | 2012-01-12 | 2012-08-29 | 中国海洋石油总公司 | Stray current drainage device |
| CN105162100A (en) * | 2015-08-06 | 2015-12-16 | 北京市燃气集团有限责任公司 | Novel alternating-current electric drainage |
| CN213866420U (en) * | 2020-11-26 | 2021-08-03 | 武汉材料保护研究所有限公司 | High-performance alternating-current interference current drainage device for cathode protection |
| CN113541113A (en) * | 2021-06-11 | 2021-10-22 | 广州燃气集团有限公司 | Drainage method and device of stray current drainage device |
| CN215580366U (en) * | 2021-06-15 | 2022-01-18 | 苏州大学 | Stray current and rail potential comprehensive limiting circuit |
| CN215897290U (en) * | 2021-06-11 | 2022-02-22 | 广州燃气集团有限公司 | Self-powered stray current electric drainage device |
-
2022
- 2022-12-29 CN CN202211703642.9A patent/CN116065156A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6212084B1 (en) * | 1999-05-17 | 2001-04-03 | Page Aerospace Limited | Active rectifier |
| US6347029B1 (en) * | 1999-07-02 | 2002-02-12 | Dmel, Inc. | Over-current protection circuit for linear voltage regulators |
| WO2005020286A2 (en) * | 2003-08-19 | 2005-03-03 | International Rectifier Corporation | Active oring controller for redundant power systems |
| CN201036995Y (en) * | 2007-04-30 | 2008-03-19 | 中国矿业大学 | Direct current railway intelligent draining device |
| CN202405774U (en) * | 2012-01-12 | 2012-08-29 | 中国海洋石油总公司 | Stray current drainage device |
| CN105162100A (en) * | 2015-08-06 | 2015-12-16 | 北京市燃气集团有限责任公司 | Novel alternating-current electric drainage |
| CN213866420U (en) * | 2020-11-26 | 2021-08-03 | 武汉材料保护研究所有限公司 | High-performance alternating-current interference current drainage device for cathode protection |
| CN113541113A (en) * | 2021-06-11 | 2021-10-22 | 广州燃气集团有限公司 | Drainage method and device of stray current drainage device |
| CN215897290U (en) * | 2021-06-11 | 2022-02-22 | 广州燃气集团有限公司 | Self-powered stray current electric drainage device |
| CN215580366U (en) * | 2021-06-15 | 2022-01-18 | 苏州大学 | Stray current and rail potential comprehensive limiting circuit |
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