CN115065247A

CN115065247A - Boost converter circuit and boost converter

Info

Publication number: CN115065247A
Application number: CN202210991897.3A
Authority: CN
Inventors: 李海波; 丛锋; 戴兴科
Original assignee: Shenzhen Weiyuan Semiconductor Co ltd
Current assignee: Shenzhen Weiyuan Semiconductor Co ltd
Priority date: 2022-08-18
Filing date: 2022-08-18
Publication date: 2022-09-16
Anticipated expiration: 2042-08-18
Also published as: CN115065247B

Abstract

The application is suitable for the technical field of power electronics, and provides a boost conversion circuit and a boost converter. The boost conversion circuit comprises a first switch unit, a second switch unit, a third switch unit, an energy storage unit and a voltage stabilizing unit; when the first switch unit and the second switch unit are both in an off state, the energy storage unit is used for outputting a first current signal and a first voltage signal; the third switching unit is used for receiving the first voltage signal and the first driving signal and disconnecting according to the first voltage signal and the first driving signal; the first switch unit is used for being turned on according to the first voltage signal, so that the first current signal flows to the output end of the boost conversion circuit through the first switch unit. The boost conversion circuit provided by the embodiment of the application can solve the problems that the follow current of the existing boost converter is large during the dead zone of switch switching, and the risk of burning the device exists.

Description

Boost converter circuit and boost converter

Technical Field

The application belongs to the technical field of power electronics, and particularly relates to a boost conversion circuit and a boost converter.

Background

The synchronous rectification boost converter generally comprises an NFET switching tube and a PFET follow current tube, wherein the trap potential of the PFET follow current tube is required to be connected to the potential which is more than or equal to the potential of an active area of the PFET follow current tube, so that the phenomenon that a parasitic diode is abnormally conducted to generate electric leakage, the efficiency of the synchronous rectification boost converter is influenced, and even a device is damaged is avoided. However, the conventional boost converter has a large follow current during a dead zone of switching, and thus has a risk of burning out a device.

Disclosure of Invention

The embodiment of the application provides a boost converter circuit and a boost converter, and can solve the problems that the conventional boost converter has large follow current during the dead zone of switch switching and has the risk of burning devices.

In a first aspect, an embodiment of the present application provides a boost converter circuit, including a first switching unit, a second switching unit, a third switching unit, an energy storage unit, and a voltage stabilizing unit; the energy storage unit is respectively electrically connected with the third switch unit, the first switch unit and the second switch unit, the third switch unit is electrically connected with the first switch unit, a common end of the voltage stabilizing unit, the first switch unit and the third switch unit is used as an output end of the boost conversion circuit, and the voltage stabilizing unit is used for stabilizing the voltage of the output end of the boost conversion circuit;

when the first switch unit and the second switch unit are both in an off state, the energy storage unit is used for outputting a first current signal and a first voltage signal; the third switching unit is used for receiving the first voltage signal and the first driving signal and disconnecting according to the first voltage signal and the first driving signal; the first switch unit is used for being turned on according to the first voltage signal, so that the first current signal flows to the output end of the boost converter circuit through the first switch unit.

In one possible implementation manner of the first aspect, the third switching unit includes a first switching tube and a second switching tube; the grid electrode of the first switch tube is used for receiving the first driving signal, the drain electrode of the first switch tube is respectively and electrically connected with the energy storage unit, the first switch unit, the second switch unit and the grid electrode of the second switch tube, and the source electrode of the first switch tube is respectively and electrically connected with the source electrode of the second switch tube and the first switch unit; and the drain electrode of the second switch tube is electrically connected with the first switch unit and the voltage stabilizing unit respectively.

In a possible implementation manner of the first aspect, the well region of the first switching tube is electrically connected to the source electrode of the first switching tube, and the well region of the second switching tube is electrically connected to the source electrode of the second switching tube.

In a possible implementation manner of the first aspect, the first switch tube is a PMOS tube, and the second switch tube is a PMOS tube.

In one possible implementation manner of the first aspect, the energy storage unit includes an inductor; the first end of the inductor is used for receiving power supply voltage, and the second end of the inductor is electrically connected with the third switch unit, the first switch unit and the second switch unit respectively.

In one possible implementation manner of the first aspect, the first switching unit includes a third switching tube; the grid electrode of the third switching tube is used for receiving the first driving signal, the source electrode of the third switching tube is respectively and electrically connected with the energy storage unit, the second switching unit and the third switching unit, the drain electrode of the third switching tube is respectively and electrically connected with the third switching unit and the voltage stabilizing unit, and the well region of the third switching tube is electrically connected with the third switching unit.

In a possible implementation manner of the first aspect, the second switching unit includes a fourth switching tube; the grid electrode of the fourth switch tube is used for receiving a second driving signal, the source electrode of the fourth switch tube is grounded, and the drain electrode of the fourth switch tube is electrically connected with the energy storage unit, the third switch unit and the first switch unit respectively.

In one possible implementation manner of the first aspect, the voltage stabilizing unit includes a capacitor; the first end of the capacitor is electrically connected with the third switch unit and the first switch unit respectively, and the second end of the capacitor is grounded.

In a second aspect, an embodiment of the present application provides a boost converter, including the boost converter circuit described in any one of the first aspects.

In one possible implementation of the second aspect, the boost converter further includes a control circuit and a drive circuit; the drive circuit is respectively electrically connected with the control circuit and the boost conversion circuit, and the boost conversion circuit is used for receiving power supply voltage;

the control circuit is used for outputting a control signal; the driving circuit is used for outputting a first driving signal and a second driving signal according to the control signal; the boost conversion circuit is used for boosting the power supply voltage according to the first driving signal and the second driving signal.

Compared with the prior art, the embodiment of the application has the advantages that:

the embodiment of the application provides a boost conversion circuit, when during the dead zone period of switch switching, first switch unit and second switch unit are all in the off-state, and the energy storage unit is used for outputting first current signal and first voltage signal. The third switching unit is used for receiving the first voltage signal and the first driving signal and is disconnected according to the first voltage signal and the first driving signal. The first switch unit is used for being conducted according to the first voltage signal, so that the first current signal flows to the output end of the boost conversion circuit through the first switch unit. It can be seen from the above that, during the dead zone of the switching, the first current signal, i.e., the follow current, flows to the output terminal of the boost converter circuit through the first switching unit, thereby solving the problem that the existing boost converter has a large follow current during the dead zone of the switching, and has a risk of burning the device.

It is understood that the beneficial effects of the second aspect can be referred to the related description of the first aspect, and are not described herein again.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.

Fig. 1 is a schematic block diagram of a boost converter circuit according to an embodiment of the present application;

fig. 2 is a schematic circuit connection diagram of a boost converter circuit according to an embodiment of the present disclosure;

fig. 3 is a schematic diagram illustrating a connection relationship between well potentials of a third switching tube in a boost converter circuit at different stages of a switching period according to an embodiment of the present application;

fig. 4 is a schematic block diagram of a boost converter provided in another embodiment of the present application.

In the figure: 10. a boost converter circuit; 20. a control circuit; 30. a drive circuit; 100. a first switch unit; 200. a second switching unit; 300. a third switching unit; 400. an energy storage unit; 500. and a voltage stabilizing unit.

Detailed Description

In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the present application. It will be apparent, however, to one skilled in the art that the present application may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present application with unnecessary detail.

It will be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

It should also be understood that the term "and/or" as used in this specification and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.

As used in the specification of this application and the appended claims, the term "if" may be interpreted contextually as "when …" or "upon" or "in response to a determination" or "in response to a detection". Similarly, the phrase "if it is determined" or "if a [ described condition or event ] is detected" may be interpreted contextually to mean "upon determining" or "in response to determining" or "upon detecting [ described condition or event ]" or "in response to detecting [ described condition or event ]".

Furthermore, in the description of the present application and the appended claims, the terms "first," "second," "third," and the like are used for distinguishing between descriptions and not necessarily for describing or implying relative importance.

Reference throughout this specification to "one embodiment" or "some embodiments," or the like, means that a particular feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of the present application. Thus, appearances of the phrases "in one embodiment," "in some embodiments," "in other embodiments," or the like, in various places throughout this specification are not necessarily all referring to the same embodiment, but rather "one or more but not all embodiments" unless specifically stated otherwise. The terms "comprising," "including," "having," and variations thereof mean "including, but not limited to," unless expressly specified otherwise.

As shown in fig. 1, an embodiment of the present application provides a boost converter circuit, which includes a first switching unit 100, a second switching unit 200, a third switching unit 300, an energy storage unit 400, and a voltage regulation unit 500. The energy storage unit 400 is electrically connected to the third switching unit 300, the first switching unit 100 and the second switching unit 200, the third switching unit 300 is electrically connected to the first switching unit 100, a common terminal of the voltage stabilizing unit 500, the first switching unit 100 and the third switching unit 300 is used as an output terminal of the boost converter circuit, and the voltage stabilizing unit 500 is used for stabilizing a voltage VOUT at the output terminal of the boost converter circuit. The energy storage unit 400 is configured to receive a supply voltage VIN.

Specifically, the first switch unit 100 is configured to receive a first driving signal PGATE, and the first driving signal PGATE controls the first switch unit 100 to be turned on and off. The second switch unit 200 is used for receiving a second driving signal NGATE, and the second driving signal NGATE controls the second switch unit 200 to be turned on and off.

The energy storage unit 400 is configured to output a first current signal and a first voltage signal when the first switching unit 100 and the second switching unit 200 are both in an off state. The third switching unit 300 is configured to receive the first voltage signal and the first driving signal PGATE, and is turned off according to the first voltage signal and the first driving signal PGATE. The first switch unit 100 is configured to be turned on according to a first voltage signal, so that a first current signal flows to an output terminal of the boost converter circuit through the first switch unit 100. As can be seen from the above, during the dead zone of the switching, the first current signal, i.e., the freewheeling current, flows to the output terminal of the boost converter circuit through the first switching unit 100, which solves the problem that the existing boost converter has a large freewheeling current during the dead zone of the switching, and has a risk of burning the device.

As shown in fig. 2, the energy storage unit 400 includes an inductor L. A first end of the inductor L is configured to receive the power supply voltage VIN, and a second end of the inductor L is electrically connected to the third switching unit 300, the first switching unit 100, and the second switching unit 200, respectively.

Specifically, when the first switch unit 100 and the second switch unit 200 are both in the off state, the second end of the inductor L, i.e., the node a, outputs the first current signal and the first voltage signal, and at this time, the first current signal changes the first voltage signal to the high potential.

When the first switch unit 100 is in the off state and the second switch unit 200 is in the on state, the inductor L stores energy, and the first voltage signal at the node a is at a low potential.

When the first switch unit 100 is in the on state and the second switch unit 200 is in the off state, the inductor L discharges, and the first voltage signal at the node a changes from the low potential to the high potential.

As shown in fig. 2, the third switching unit 300 includes a first switching tube M1 and a second switching tube M2. The gate of the first switch tube M1 is configured to receive a first driving signal PGATE, the drain of the first switch tube M1 is electrically connected to the gates of the energy storage unit 400, the first switch unit 100, the second switch unit 200, and the second switch tube M2, respectively, and the source of the first switch tube M1 is electrically connected to the source of the second switch tube M2 and the first switch unit 100, respectively. The drain of the second switching tube M2 is electrically connected to the first switching unit 100 and the voltage stabilizing unit 500, respectively.

As can be seen from fig. 2, the drain of the first switching tube M1 is electrically connected to the second end of the inductor L in the energy storage unit 400, the gates of the first switching cell 100, the second switching cell 200 and the second switching tube M2, respectively.

Specifically, when the first switch unit 100 and the second switch unit 200 are both in the off state, the second end of the inductor L, i.e., the node a, outputs the first voltage signal and the first current signal, and at this time, the first current signal is larger, so that the first voltage signal becomes a high potential. The first voltage signal controls the second switch M2 to turn off, and the first driving signal PGATE is also high at this time, which controls the first switch M1 to turn off.

When the first switch unit 100 is in the off state and the second switch unit 200 is in the on state, the inductor L stores energy, the first voltage signal changes to the low potential, and controls the second switch M2 to be turned on, so that the source of the second switch M2 is connected to the voltage VOUT, and the first driving signal PGATE is at the high potential at this time, and controls the first switch M1 to be turned off.

When the first switch unit 100 is in the on state and the second switch unit 200 is in the off state, the inductor L discharges, the first voltage signal becomes high, and the second switch tube M2 is controlled to be turned off. At this time, the first driving signal PGATE is at a low level, and controls the first switch M1 to be turned on, so that the source of the first switch M1 is connected to the first voltage signal.

Further, the well region of the first switching transistor M1 is electrically connected to the source of the first switching transistor M1, and the well region of the second switching transistor M2 is electrically connected to the source of the second switching transistor M2.

Specifically, when the first switch tube M1 is turned on, the well potential of the first switch tube M1 is connected to the first voltage signal, and the well potential of the first switch tube M1 is equal to the source potential of the first switch tube M1, so that the parasitic diode of the first switch tube M1 is not turned on, and the whole circuit can normally operate.

When the second switch transistor M2 is turned on, the well potential of the second switch transistor M2 is connected to the voltage VOUT, and the well potential of the second switch transistor M2 is equal to the source potential of the second switch transistor M2, so as to ensure that the parasitic diode of the second switch transistor M2 is not turned on, and the whole circuit can normally operate.

Furthermore, the first switch transistor M1 is a PMOS transistor, and the second switch transistor M2 is a PMOS transistor.

As shown in fig. 2, the first switching unit 100 includes a third switching tube M3. The gate of the third switching tube M3 is configured to receive a first driving signal PGATE, the source of the third switching tube M3 is electrically connected to the energy storage unit 400, the second switching unit 200, and the third switching unit 300, the drain of the third switching tube M3 is electrically connected to the third switching unit 300 and the voltage stabilizing unit 500, and the well region of the third switching tube M3 is electrically connected to the third switching unit 300.

As can be seen from fig. 2, the source of the third switching tube M3 is electrically connected to the second end of the inductor L in the energy storage unit 400, the drain of the first switching tube M1 in the second switching unit 200 and the third switching unit 300, respectively. The drain of the third switching tube M3 is electrically connected to the drain of the second switching tube M2 in the third switching unit 300 and the voltage stabilizing unit 500, respectively, and the well region of the third switching tube M3 is electrically connected to the source of the first switching tube M1 and the source of the second switching tube M2 in the third switching unit 300, respectively.

Specifically, when the first driving signal PGATE is at a high potential, the third switching tube M3 is in an off state, and the second switching unit 200 is also in an off state, the first voltage signal is at a high potential, the second switching tube M2 is controlled to be turned off, the first driving signal PGATE is at a high potential, the first switching tube M1 is controlled to be turned off, at this time, the well potential of the third switching tube M3 is floating, and the first current signal cannot flow to the first switching tube M1 or the second switching tube M2 through the parasitic diode in the third switching tube M3, so that no freewheeling current flows through the parasitic diode in the third switching tube M3. At this time, the first current signal will make the first voltage signal continuously rise, so that the third switching tube M3 is in a saturated conducting state, and the first current signal flows to the output end of the boost converter circuit through the third switching tube M3. Therefore, during the dead band of the switching, the first current signal, i.e., the freewheel current freewheels through the third switching tube M3.

When the first driving signal PGATE is high, the third switching transistor M3 is in an off state, and the second switching unit 200 is in an on state. The inductor L stores energy, the first voltage signal becomes a low potential, the second switch tube M2 is controlled to be turned on, the first driving signal PGATE is a high potential, the first switch tube M1 is controlled to be turned off, and at this time, the well potential of the third switch tube M3 is connected to the voltage VOUT through the second switch tube M2, as shown in fig. 3.

When the first driving signal PGATE is low, the third switching transistor M3 is in a conducting state, and the second switching unit 200 is in an off state. The inductor L discharges, the first voltage signal changes to high level, the second switch M2 is controlled to be turned off, the first driving signal PGATE is low level, the first switch M1 is controlled to be turned on, and at this time, the well potential of the third switch M3 is connected to the first voltage signal, i.e., the voltage at the node a, through the first switch M1, as shown in fig. 3.

Furthermore, the third switch transistor M3 is a PMOS transistor.

As shown in fig. 2, the second switching unit 200 includes a fourth switching tube M4. The gate of the fourth switching tube M4 is used for receiving the second driving signal NGATE, the source of the fourth switching tube M4 is grounded, and the drain of the fourth switching tube M4 is electrically connected to the energy storage unit 400, the third switching unit 300 and the first switching unit 100, respectively.

As can be seen from fig. 2, the drain of the fourth switching tube M4 is electrically connected to the second end of the inductor L in the energy storage unit 400, the drain of the first switching tube M1 in the third switching unit 300, and the source of the third switching tube M3 in the first switching unit 100, respectively.

Specifically, when the third switching tube M3 is in an off state, the second driving signal NGATE is at a high potential, and the fourth switching tube M4 is controlled to be turned on, so that the second end of the inductor L is grounded, the inductor L stores energy at this time, and the first voltage signal at the node a is at a low potential. When the third switching transistor M3 is in the on state, the second driving signal NGATE is at the low potential, and the fourth switching transistor M4 is controlled to be turned off, at this time, the inductor L discharges, and the first voltage signal at the node a changes from the low potential to the high potential. When the third switching tube M3 is in the off state, the second driving signal NGATE is at low potential, and the fourth switching tube M4 is controlled to be turned off, so that the fourth switching tube M4 is also in the off state, and the first voltage signal at the node a continues to keep at high potential.

Furthermore, the fourth switching tube M4 is an NMOS tube.

As shown in fig. 2, the voltage stabilizing unit 500 includes a capacitor C. A first terminal of the capacitor C is electrically connected to the third switching unit 300 and the first switching unit 100, respectively, and a second terminal of the capacitor C is grounded.

As can be seen from fig. 2, the first end of the capacitor C is electrically connected to the drain of the second switching tube M2 in the third switching unit 300 and the drain of the third switching tube M3 in the first switching unit 100, respectively.

Specifically, the capacitor C mainly functions to stabilize the voltage VOUT at the output terminal of the boost converter circuit, so as to be used by a subsequent load circuit.

For clarity of the description of the present application, the operation principle of the boost converter circuit is described in detail below with reference to fig. 2 and 3:

when the fourth switching tube M4 and the third switching tube M3 are both in an off state, and the third switching tube M3 is close to conducting, the second end of the inductor L outputs a first current signal and a first voltage signal, the first current signal changes the first voltage signal from a low potential to a high potential, the second switching tube M2 is controlled to change from a conducting state to an off state, at this time, the first switching tube M1 is also in an off state, the first current signal cannot flow to the first switching tube M1 or the second switching tube M2 through the parasitic diode of the third switching tube M3, so that the parasitic diode in the third switching tube M3 does not flow the first current signal, the first current signal continuously raises the first voltage signal, the third switching tube M3 reaches a saturated conducting state, and the first current signal flows to the output end of the boost converter circuit through the third switching tube M3. At this time, the first voltage signal is equal to the voltage VOUT plus the voltage between the gate and the source of the third switching transistor M3, and during the dead time of the switching, the first current signal, i.e., the freewheeling current, freewheels through the third switching transistor M3.

When the dead zone period is over, the third switch tube M3 is turned on, the first driving signal PGATE becomes a low potential, the first switch tube M1 is controlled to be turned on, the well potential of the third switch tube M3 is connected to the first voltage signal through the first switch tube M1, the well potential of the third switch tube M3 is equal to the source potential of the third switch tube M3, no current flows to the first switch tube M1 through the parasitic diode in the third switch tube M3, and the first current signal, i.e., the freewheeling current, still freewheels through the third switch tube M3.

When the fourth switching transistor M4 and the third switching transistor M3 are both in an off state, and the fourth switching transistor M4 is close to being turned on, the second end of the inductor L outputs a first current signal and a first voltage signal, the first voltage signal is at a high potential, the second switching transistor M2 is controlled to be turned off, and the first driving signal PGATE is at a high potential, so that the first switching transistor M1 is controlled to be turned off. The first current signal cannot flow to the first switching tube M1 or the second switching tube M2 through the parasitic diode of the third switching tube M3, so that no first current signal flows through the parasitic diode in the third switching tube M3. At this time, the first voltage signal is increased from the voltage VOUT to the voltage VOUT plus the voltage between the gate and the source of the third switching transistor M3, so that the third switching transistor M3 reaches a saturated conducting state, and the first current signal flows to the output terminal of the boost converter circuit through the third switching transistor M3. During the dead zone of the switching, the first current signal, i.e., the freewheeling current, freewheels through the third switching transistor M3.

When the dead time period ends, the fourth switching transistor M4 is turned on, and at this time, the first driving signal PGATE changes to a high level to control the first switching transistor M1 to turn off, the first voltage signal changes from a high level to a low level to control the second switching transistor M2 to turn on, and the well potential of the third switching transistor M3 is connected to the voltage VOUT through the second switching transistor M2. The charge of the capacitor C does not leak through the parasitic diode in the third switch transistor M3.

From the above analysis, it can be seen that, in all the phases of each cycle, the well potential of the third switching transistor M3 in the embodiment of the present application is connected to the higher potential of the first voltage signal and the voltage VOUT, and during the dead-band period of the switching, the first current signal freewheels through the third switching transistor M3, which solves the problem that the conventional boost converter has a large freewheeling current during the dead-band period of the switching, and the risk of burning out the device exists.

As shown in fig. 4, an embodiment of the present application further provides a boost converter, which includes the boost converter circuit 10 described above.

Further, the boost converter further includes a control circuit 20 and a drive circuit 30. The driving circuit 30 is electrically connected to the control circuit 20 and the boost converter circuit 10, respectively, and the boost converter circuit 10 is configured to receive the power supply voltage VIN.

Specifically, the control circuit 20 is configured to output a control signal. The driving circuit 30 is configured to output a first driving signal PGATE and a second driving signal NGATE according to the control signal. The boost converter circuit 10 is configured to boost the power supply voltage VIN according to the first driving signal PGATE and the second driving signal NGATE.

When in the dead zone period of switch switching, the generated free-wheeling current flows to the output end of the boost converter through the third switch tube in the boost conversion circuit 10 in the boost converter, and the problem that the free-wheeling current is large in the dead zone period of switch switching and the risk of burning the device exists in the conventional boost converter is solved.

In the above embodiments, the description of each embodiment has its own emphasis, and reference may be made to the related description of other embodiments for parts that are not described or recited in any embodiment.

The above-mentioned embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present application and are intended to be included within the scope of the present application.

Claims

1. A boost conversion circuit is characterized by comprising a first switch unit, a second switch unit, a third switch unit, an energy storage unit and a voltage stabilizing unit; the energy storage unit is respectively electrically connected with the third switch unit, the first switch unit and the second switch unit, the third switch unit is electrically connected with the first switch unit, a common end of the voltage stabilizing unit, the first switch unit and the third switch unit is used as an output end of the boost conversion circuit, and the voltage stabilizing unit is used for stabilizing the voltage of the output end of the boost conversion circuit;

when the first switch unit and the second switch unit are both in an off state, the energy storage unit is used for outputting a first current signal and a first voltage signal; the third switching unit is used for receiving the first voltage signal and the first driving signal and disconnecting according to the first voltage signal and the first driving signal; the first switch unit is used for being turned on according to the first voltage signal, so that the first current signal flows to the output end of the boost conversion circuit through the first switch unit.

2. The boost converter circuit according to claim 1, wherein the third switching unit includes a first switching tube and a second switching tube; the grid electrode of the first switch tube is used for receiving the first driving signal, the drain electrode of the first switch tube is respectively and electrically connected with the energy storage unit, the first switch unit, the second switch unit and the grid electrode of the second switch tube, and the source electrode of the first switch tube is respectively and electrically connected with the source electrode of the second switch tube and the first switch unit; and the drain electrode of the second switching tube is electrically connected with the first switching unit and the voltage stabilizing unit respectively.

3. A boost converter circuit according to claim 2, wherein the well region of the first switching transistor is electrically connected to the source of the first switching transistor, and the well region of the second switching transistor is electrically connected to the source of the second switching transistor.

4. The boost converter circuit according to claim 2, wherein the first switch transistor is a PMOS transistor, and the second switch transistor is a PMOS transistor.

5. A boost converter circuit according to claim 1, characterised in that the energy storage unit comprises an inductance; the first end of the inductor is used for receiving power supply voltage, and the second end of the inductor is electrically connected with the third switch unit, the first switch unit and the second switch unit respectively.

6. A boost converter circuit according to claim 1, wherein said first switching means includes a third switching tube; the grid electrode of the third switching tube is used for receiving the first driving signal, the source electrode of the third switching tube is respectively and electrically connected with the energy storage unit, the second switching unit and the third switching unit, the drain electrode of the third switching tube is respectively and electrically connected with the third switching unit and the voltage stabilizing unit, and the well region of the third switching tube is electrically connected with the third switching unit.

7. The boost converter circuit according to claim 1, wherein the second switching unit comprises a fourth switching tube; the grid electrode of the fourth switch tube is used for receiving a second driving signal, the source electrode of the fourth switch tube is grounded, and the drain electrode of the fourth switch tube is electrically connected with the energy storage unit, the third switch unit and the first switch unit respectively.

8. The boost converter circuit according to claim 1, wherein the voltage stabilizing unit includes a capacitor; the first end of the capacitor is electrically connected with the third switch unit and the first switch unit respectively, and the second end of the capacitor is grounded.

9. A boost converter comprising the boost converter circuit of any one of claims 1 to 8.

10. A boost converter according to claim 9, further comprising a control circuit and a drive circuit; the drive circuit is respectively electrically connected with the control circuit and the boost conversion circuit, and the boost conversion circuit is used for receiving power supply voltage;