CN109039071A - A kind of switching-on and switching-off state detection circuit - Google Patents
A kind of switching-on and switching-off state detection circuit Download PDFInfo
- Publication number
- CN109039071A CN109039071A CN201810949616.1A CN201810949616A CN109039071A CN 109039071 A CN109039071 A CN 109039071A CN 201810949616 A CN201810949616 A CN 201810949616A CN 109039071 A CN109039071 A CN 109039071A
- Authority
- CN
- China
- Prior art keywords
- switch
- diode
- detection circuit
- comparator
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 103
- 101100112673 Rattus norvegicus Ccnd2 gene Proteins 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 3
- 230000000087 stabilizing effect Effects 0.000 claims 1
- 238000012360 testing method Methods 0.000 abstract description 31
- 206010037660 Pyrexia Diseases 0.000 abstract description 7
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000005611 electricity Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
Abstract
The present invention relates to power detecting technical fields, more particularly to a kind of switching-on and switching-off state detection circuit, including power supply and its detection circuit, power supply includes power supply Vin1, power supply Vin2, switch S1, switch S2, diode D1 and diode D2, switch state of the detection circuit for detection switch S1, switch S2, the detection circuit includes resistance R1, high voltage depletion mode NMOS tube N1, PMOS tube P1, PMOS tube P2, comparator, resistance R2 and clamp circuit；This case is by the power end for being galvanically connected to comparator of circuit test side after testing, operating current as comparator, not only reduce part power consumption penalty, and the working efficiency of system is improved, and then reduce the electronic device fever in circuit, prevent electronic device heating burnout, to improve system reliability, and compared with existing detection circuit, invention also saves a clamp circuits, simplify circuit overall structure.
Description
Technical field
The present invention relates to power detecting technical field more particularly to a kind of switching-on and switching-off state detection circuits.
Background technique
As shown in Figure 1, be a kind of existing switching-on and switching-off state detection circuit, wherein power unit include power supply Vin1,
Power supply Vin2, switch S1, switch S2, diode D1 and diode D2, detection circuit part include resistance R1, resistance R2, resistance
R3, comparator, test side clamp circuit and VCC clamp circuit, detection circuit are used to detect the state of switch S1 and S2 in power supply,
And output logic signal.
When switch S1 conducting, switch S2 are closed, power supply Vin1 is load supplying by diode D1, and diode D2 is closed
It closes；When switch S1 is closed, switch S2 is connected, power supply Vin2 is load supplying by diode D2, and diode D1 is closed.Resistance
R3 is connected to the feeder ear of detection circuit, flows through resistance R3 and enters the electric current of the feeder ear of detection circuit as detection circuit
Operating current.The operating current of detection circuit is Ivcc, so by resistance R3 and entering to guarantee that detection circuit is worked normally
The electric current I2 of the feeder ear of detection circuit has to be larger than the operating current Ivcc of detection circuit.The voltage value of power supply Vin1 and Vin2
For high-voltage value, the safe operating voltage value of the electronic device inside detection circuit is low voltage value.VCC clamp circuit is used to limit
The ceiling voltage of detection circuit feeder ear and comparator power end VCC processed, the feeder ear are connected to the power supply VCC of comparator, are
Comparator power supply；Test side clamp circuit is used to limit the maximum input voltage on detection circuit terminal, to prevent in detection circuit
The electronic device of comparator is burnt because of high voltage.The method of VCC clamp circuit limitation ceiling voltage works as detection circuit
When feeder ear voltage is higher than power supply maximum limitation voltage, release to extra electric current, test side clamp circuit limits highest
The method of voltage is to let out when the test side voltage of detection circuit is higher than test side maximum limitation voltage to extra electric current
It puts.The one end resistance R1 is connected to the anode of switch S2 and diode D2, and the other end is connected to the test side of detection circuit.Resistance R1
The state of detection switch S2 is used for the divider resistance that R2 is constituted.The value of the threshold voltage vt h of comparator should meet:
When switch S1 is closed, switch S2 is connected, diode D2 is connected, and the tie point voltage of switch S2 and diode D2 are
Vin2, the minimum voltage value of the test side of detection circuit such as following formula:
The voltage value is higher than the threshold voltage vt h of comparator, and the output signal of comparator is low logical signal.
When switch S1 conducting, switch S2 are closed, diode D2 is closed.Under normal circumstances, there is no by diode D2 yin
Pole flows to the reverse current of diode D2 anode, and the electric current for flowing through resistance R1 and R2 is 0A, so the test side of detection circuit
Voltage is 0V, which is lower than the threshold voltage vt h of comparator, and the output signal of comparator is high logical signal.
And existing common diode can be generated in higher operating temperature and higher backward voltage by two
Pole pipe cathode flows to the reverse current leakage of anode.In the case where diode reverse current leakage is not present, when switch S1 is led
When logical, switch S2 is closed, the output signal of comparator should be high logical signal.However, the reverse leakage electricity of diode D2
Stream will cause switching-on and switching-off state detection circuit failure, and the output signal of comparator may be made to become low logical signal.
The reverse current leakage of diode D2 causes the principle of switching-on and switching-off state detection circuit failure are as follows: when switch S1 is led
It is I1 by the reverse current leakage that diode D2 cathode flows to anode when logical, switch S2 is closed, which passes through switch S1, two
Pole pipe D1, diode D2, resistance R1 flow to the test side of detection circuit, and the detection terminal voltage value of detection circuit is R2×I1, two poles
The reverse current leakage of pipe D2 is usually bigger, then test side voltage compares in the threshold voltage vt h that may be greater than comparator
The output signal of device can become low logical signal, lead to detection circuit failure.
To guarantee that, in diode D2 reverse leakage, comparator output signal still maintains in switching-on and switching-off state detection circuit
High logical signal, then must satisfy R2×I1The resistance value of < Vth, i.e. resistance R2 need sufficiently small, satisfactionWhen
When switch S1 is closed, switch S2 is connected, test side voltage should be greater than Vth, so that the output signal of comparator be made to become low
Logical signal, i.e.,It is available by two above equationI.e. selection R1 and
When the resistance value of R2, it is necessary to which the electric current that the test side for entering detection circuit when switch S1 is closed, switch S2 is connected is arranged is greater than
The reverse current leakage I1 of diode D2 just can guarantee that detection circuit works normally.
It can see by analyzing above, in order to guarantee that detection circuit works normally, when switch S1 is closed, switch S2 conducting
When, the electric current into the test side of detection circuit has to be larger than the reverse current leakage I1 of diode D2, goes forward side by side by resistance R3
The electric current I2 for entering the feeder ear of detection circuit has to be larger than the operating current Ivcc of detection circuit.Detection circuit is obtained by calculation
On general power minimum value are as follows:
Pdiss=Vin2×(I1+Ivcc) (3)
The power loss is usually bigger, can reduce system effectiveness, and easily detection circuit is caused to be generated heat, serious situation
Under, it will cause electronic system and burn and failure.
Summary of the invention
For the problems of the prior art, the present invention provides a kind of more efficient power switch detection circuit.
To realize the above technical purpose, the technical scheme is that
A kind of switching-on and switching-off state detection circuit, including power supply and its detection circuit, the power supply include power supply Vin1, electricity
Source Vin2, switch S1, switch S2, diode D1 and diode D2, the power supply Vin1 is connect with one end of switch S1, described to open
The other end for closing S1 is connect with the anode of diode D1, and the power supply Vin2 is connect with one end of switch S2, the switch S2's
The other end is connect with the anode of diode D2, and the cathode of the diode D1 connect with the cathode of diode D2 and connects as load
Enter end；Switch state of the detection circuit for detection switch S1, switch S2, the detection circuit includes resistance R1, high pressure
Depletion type NMOS tube N1, PMOS tube P1, PMOS tube P2, comparator, resistance R2 and clamp circuit；Distinguish one end of the resistance R1
It is connect with the anode of the other end of switch S2 and diode D2, the other end source with the source electrode of PMOS tube P1 and PMOS tube P2 respectively
Pole connection, the drain electrode of the PMOS tube P1 connect with the inverting input terminal of one end of R2, voltage comparator respectively, grid respectively with
The grid of PMOS tube P2, drain electrode, the source electrode connection of the power end VCC of comparator, high voltage depletion mode NMOS tube N1, the comparator
Non-inverting input terminal access threshold voltage vt h, output end as detection signal output end, the high voltage depletion mode NMOS tube N1's
Drain electrode is connect with the cathode of the cathode of diode D1 and diode D2 respectively, and source electrode accesses clamp circuit, and the resistance R2's is another
One end, the grid of high voltage depletion mode NMOS tube N1 and substrate are grounded.
Preferably, the clamp circuit includes zener diode ZD1, the cathode and high pressure of the zener diode ZD1
The source electrode of depletion type NMOS tube N1 connects, plus earth.
From the above, it can be seen that the present invention has following advantages:
In circuit structure of the present invention, using the other end of R1 as the test side of detection circuit, high voltage depletion mode
Power end of the source electrode of NMOS tube N1 as comparator in detection circuit, and the electric current of the test side of circuit after testing is connected
It is connected to the power end of comparator, as the operating current of comparator, not only can reduce part power consumption penalty, but also can be improved
The working efficiency of system, and then reduce the electronic device fever in circuit, prevent electronic device from burning because of fever, to improve
System reliability.Meanwhile compared with existing power supply switch condition detection circuit shown in FIG. 1, invention also saves one
Clamp circuit, and then simplify circuit overall structure.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of existing power switch detection circuit；
Fig. 2 is structural schematic diagram of the invention.
Specific embodiment
In conjunction with Fig. 2, the specific embodiment that the present invention will be described in detail, but any limit is not done to claim of the invention
It is fixed.
As shown in Fig. 2, a kind of switching-on and switching-off state detection circuit, including power supply and its detection circuit, in which:
Power supply specifically includes power supply Vin1, power supply Vin2, switch S1, switch S2, diode D1 and diode D2, power supply
Vin1 is connect with one end of switch S1, and the other end of switch S1 is connect with the anode of diode D1, power supply Vin2 and switch S2's
One end connection, the other end of switch S2 are connect with the anode of diode D2, and the cathode of diode D1 and the cathode of diode D2 connect
It connects and as load incoming end；
Switch state of the detection circuit for detection switch S1, switch S2, detection circuit specifically include resistance R1, high pressure consumption
Type NMOS tube N1, PMOS tube P1, PMOS tube P2, comparator, resistance R2 and clamp circuit, clamp circuit include zener diode to the greatest extent
ZD1；One end of resistance R1 is connect with the anode of the other end of switch S2 and diode D2 respectively, the other end respectively with PMOS tube P1
Source electrode connected with the source electrode of PMOS tube P2, the drain electrode anti-phase input with one end of R2, voltage comparator respectively of PMOS tube P1
End connection, grid respectively with the grid of PMOS tube P2, drain electrode, the power end VCC of comparator, high voltage depletion mode NMOS tube N1 source
Pole connection, the non-inverting input terminal of comparator access threshold voltage vt h, and output end is as detection signal output end, high voltage depletion mode
The drain electrode of NMOS tube N1 is connect with the cathode of the cathode of diode D1 and diode D2 respectively, and source electrode connects the yin of zener diode
Pole, the other end, the grid of high voltage depletion mode NMOS tube N1 and the anode of substrate, zener diode ZD1 of resistance R2 are grounded.
The operation principle of the present invention is that:
In power supply, when switch S1 conducting, switch S2 are closed, power supply Vin1 by diode D1 for load supplying, two
Pole pipe D2 is closed；When switch S1 is closed, switch S2 is connected, power supply Vin2 is load supplying, diode D1 by diode D2
It closes.
Using the other end of R1 as the test side of detection circuit, high voltage depletion mode NMOS tube N1 in circuit structure of the invention
Feeder ear of the drain electrode as detection circuit, be connected to the cathode of diode D1 and the cathode of diode D2, high voltage depletion mode
The source electrode of NMOS tube N1 is connected to the power end VCC of comparator, powers for comparator.
High voltage depletion mode NMOS tube N1 provides operating current for the comparator in detection circuit, and the drain electrode of N1 can be resistant to height
Pressure, and it is connected to the cathode of diode D1 and diode D2, grid is connected to ground.If the threshold voltage of high-pressure depletion pipe is VN, VN
It is negative value, absolute value | VN| maximum less than clamp circuit limits voltage (i.e. the breakdown reverse voltage of zener diode ZD1),
When the feeder ear voltage of detection circuit rises above | VN| when, N1 can be automatically shut down because of channel pinch off.
When switch S1 conducting, switch S2 are closed, diode D1 conducting, diode D2 is closed, high voltage depletion mode NMOS tube
N1 conducting, flows through operating current of the electric current as detection circuit of D1 and N1.
When switch S1 is closed, switch S2 is connected, diode D1 is closed, and diode D2 conducting is flowed through resistance R1 and flowed through
Operating current of the electric current of PMOS tube P2 as detection circuit.Meanwhile flowing through the electric current of diode D1 and high-pressure depletion pipe N1
Operating current as detection circuit.
If the operating current of detection circuit is Ivcc, to guarantee that detection circuit works normally, flows through N1 and flow through the total of P2
Electric current has to be larger than the operating current Ivcc of detection circuit.
The voltage of power supply Vin1 and Vin2 are high voltage, and the feeder ear of detection circuit and the input voltage value of comparator are low
Voltage value.Clamp circuit is used to limit the ceiling voltage of comparator power end VCC in detection circuit.Because of the drain electrode of PMOS tube P2
Voltage difference V between source electrodeDS-P2Usually about 1V~2V, so the ceiling voltage of the test side of detection circuit is than comparator electricity
The high about 1V~2V of the voltage of source VCC, it is ensured that the voltage value of the test side of detection circuit remains as low-voltage, detection circuit
Electronic device will not be burnt because of high voltage.
The circuit that resistance R1, PMOS tube P1, PMOS tube P2 and resistance R2 are constituted is used for the state of detection switch S2.
When switch S1 is closed, switch S2 is connected, diode D2 conducting, the tie point electricity of switch S2 and diode D2 anode
Pressure is Vin2, passes through resistance R1 and flows through the electric current of PMOS tube P1 and generates input of the voltage signal as comparator on resistance R2
Signal.The ratio of the channel width-over-length ratio of PMOS tube P1 and P2 is 1:m, so flowing through the current value ratio of PMOS tube P1 and PMOS tube P2
Example is that (wherein, much larger than 1), the voltage VR2 on resistance R2 may be expressed as: m 1:m
In formula (4), Vcc is the maximum limit voltage (while being also the supply voltage of comparator) of clamp circuit, VDS-P2For
Voltage between the drain electrode and source electrode of PMOS tube P2, R1For the resistance value of resistance R1, R2For the resistance value of resistance R2, in order to guarantee to detect
Circuit works normally, and the voltage value on resistance R2 should be higher than the threshold voltage vt h of comparator, it may be assumed that
In formula (5), Vth is the threshold voltage of comparator, at this point, the output signal of comparator is low logical signal.
When switch S1 conducting, switch S2 are closed, diode D2 is closed.Under normal circumstances, there is no by diode D2 yin
Pole flows to the reverse current leakage of anode.The electric current for flowing through resistance R1, PMOS tube P1, PMOS tube P2 and resistance R2 is 0, resistance R2
On voltage value be 0V, lower than the threshold voltage vt h of comparator, at this point, the output signal of comparator is high logical signal.
When switch S1 conducting, switch S2 are closed, diode D2 is closed, and flows to anode if there is from diode D2 cathode
Reverse current leakage I1, which can flow into the test side of detection circuit.The ditch road width of PMOS tube P1 and P2 are long
The ratio of ratio is 1:m, so the current value ratio for flowing through PMOS tube P1 and PMOS tube P2 is 1:m, the voltage value on resistance R2 can
It indicates are as follows:
For make the detection circuit will not because of diode D2 reverse leakage failure, then must assure that the voltage on resistance R2
Value is less than the threshold voltage vt h of comparator, it may be assumed that
It can be calculated in conjunction with above formula:
I.e.
It is can be seen that from above-mentioned derivation process in order to guarantee that detection circuit works normally, when switch S1 is closed, switch S2 is led
When logical, the electric current into the test side of detection circuit has to be larger than the reverse current leakage I1 of diode D2.At this point, flowing through two poles
The reverse current leakage of pipe D2Flow through P2 and the operating current as comparator in detection circuit.If flowing through P2's
Electric current is less than the operating current Ivcc of comparator, then the source voltage decline of high-pressure depletion pipe N1, high-pressure depletion pipe N1 conducting
And supply the operating current Ivcc of comparator；If the electric current for flowing through P2 is greater than the operating current Ivcc of comparator, high pressure consumption
Although N1 is remained turned-off, clamp circuit (i.e. zener diode ZD1) conducting and unwanted currents of releasing.
By analyzing above, it can be seen that into the electric current of detection circuit test sideCompare as in detection circuit
Compared with the operating current of device, in order to guarantee that detection circuit works normally, when switch S1 is closed, switch S2 is connected, into detection electricity
The test side on road and the total current of feeder ear have to be larger than the operating current Ivcc of comparator.If the reverse leakage of diode D2
Electric current I1 is less than the operating current Ivcc of comparator, then is equal into the total current of the test side of detection circuit and feeder ear and compares
The operating current Ivcc of device, the general power in detection circuit are as follows:
Pdiss=Vin2 × Ivcc formula (10)
If diode reverse current leakage I1 is greater than the operating current Ivcc of comparator, enter the power supply of detection circuit
The electric current at end is 0, the general power in detection circuit are as follows:
Pdiss=Vin2 × I1 formula (11)
Therefore, compared with existing power supply switch condition detection circuit as shown in Figure 1, the general power of circuit of the invention subtracts
It is small.
Meanwhile compared with existing power supply switch condition detection circuit shown in FIG. 1, circuit of the invention will be electric after testing
A part of the test side electric current on road is introduced into the power end VCC of comparator in detection circuit, as the operating current of comparator,
Part power consumption penalty is reduced, the working efficiency of system can be improved, and can reduce the fever of the electronic device in circuit, is prevented
Electronic device is burnt because of fever, improves system reliability, and circuit of the invention also saves a clamp circuit, into
And simplify circuit overall structure.
In conclusion the invention has the following advantages that
In circuit structure of the present invention, using the other end of R1 as the test side of detection circuit, high voltage depletion mode
Power end of the source electrode of NMOS tube N1 as comparator in detection circuit, and the electric current of the test side of circuit after testing is connected
It is connected to the power end of comparator, as the operating current of comparator, not only can reduce part power consumption penalty, but also can be improved
The working efficiency of system, and then reduce the electronic device fever in circuit, prevent electronic device from burning because of fever, to improve
System reliability.Meanwhile compared with existing power supply switch condition detection circuit shown in FIG. 1, invention also saves one
Clamp circuit, and then simplify circuit overall structure.
It is understood that being merely to illustrate the present invention above with respect to specific descriptions of the invention and being not limited to this
Technical solution described in inventive embodiments.Those skilled in the art should understand that still can be carried out to the present invention
Modification or equivalent replacement, to reach identical technical effect；As long as meet use needs, all protection scope of the present invention it
It is interior.
Claims (2)
1. a kind of switching-on and switching-off state detection circuit, it is characterised in that: including power supply and its detection circuit；
The power supply includes power supply Vin1, power supply Vin2, switch S1, switch S2, diode D1 and diode D2, the power supply
Vin1 is connect with one end of switch S1, and the other end of the switch S1 is connect with the anode of diode D1, the power supply Vin2 with
One end of switch S2 connects, and the other end of the switch S2 is connect with the anode of diode D2, the cathode of the diode D1 and
The cathode of diode D2 connects and as load incoming end；
Switch state of the detection circuit for detection switch S1, switch S2, the detection circuit include resistance R1, high pressure consumption
Type NMOS tube N1, PMOS tube P1, PMOS tube P2, comparator, resistance R2 and clamp circuit to the greatest extent；One end of the resistance R1 respectively with
The other end of switch S2 is connected with the anode of diode D2, the other end source electrode with the source electrode of PMOS tube P1 and PMOS tube P2 respectively
Connection, the drain electrode of the PMOS tube P1 connect with the inverting input terminal of one end of R2, voltage comparator respectively, grid respectively with
The grid of PMOS tube P2, drain electrode, the source electrode connection of the power end VCC of comparator, high voltage depletion mode NMOS tube N1, the comparator
Non-inverting input terminal access threshold voltage vt h, output end as detection signal output end, the high voltage depletion mode NMOS tube N1's
Drain electrode is connect with the cathode of the cathode of diode D1 and diode D2 respectively, and source electrode accesses clamp circuit, and the resistance R2's is another
One end, the grid of high voltage depletion mode NMOS tube N1 and substrate are grounded.
2. switching-on and switching-off state detection circuit according to claim 1, it is characterised in that: the clamp circuit includes pressure stabilizing
The cathode of diode ZD1, the zener diode ZD1 are connect with the source electrode of high voltage depletion mode NMOS tube N1, plus earth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810949616.1A CN109039071B (en) | 2018-08-20 | 2018-08-20 | Power switch state detection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810949616.1A CN109039071B (en) | 2018-08-20 | 2018-08-20 | Power switch state detection circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109039071A true CN109039071A (en) | 2018-12-18 |
| CN109039071B CN109039071B (en) | 2023-12-01 |
Family
ID=64632108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810949616.1A Active CN109039071B (en) | 2018-08-20 | 2018-08-20 | Power switch state detection circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109039071B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111650530A (en) * | 2020-06-30 | 2020-09-11 | 上海南麟电子股份有限公司 | Power switch state detection circuit |
| CN113933699A (en) * | 2021-10-18 | 2022-01-14 | 杭州优恩捷科技有限公司 | High-reliability passive switch on-off state detection circuit |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005191222A (en) * | 2003-12-25 | 2005-07-14 | Toshiba Corp | Current detecting circuit |
| CN102064678A (en) * | 2010-11-29 | 2011-05-18 | Bcd半导体制造有限公司 | Gate drive circuit of switch power supply |
| JP2011151788A (en) * | 2009-12-22 | 2011-08-04 | Fujitsu Semiconductor Ltd | Semiconductor device |
| US20130082742A1 (en) * | 2011-06-30 | 2013-04-04 | Chengdu Monolithic Power Systems Co., Ltd. | Load detecting circuits and the method thereof |
| CN103575964A (en) * | 2012-07-19 | 2014-02-12 | 快捷半导体(苏州)有限公司 | Over-current detection circuit and method for power switch tube |
| CN103969494A (en) * | 2014-04-30 | 2014-08-06 | 广州钧衡微电子科技有限公司 | High-precision current detecting circuit and current-limiting device applying same |
| CN104897943A (en) * | 2015-04-30 | 2015-09-09 | 中国电子科技集团公司第五十八研究所 | High-sensitivity low-power current detection circuit |
| CN208581167U (en) * | 2018-08-20 | 2019-03-05 | 无锡麟力科技有限公司 | A kind of switching-on and switching-off state detection circuit |
-
2018
- 2018-08-20 CN CN201810949616.1A patent/CN109039071B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005191222A (en) * | 2003-12-25 | 2005-07-14 | Toshiba Corp | Current detecting circuit |
| JP2011151788A (en) * | 2009-12-22 | 2011-08-04 | Fujitsu Semiconductor Ltd | Semiconductor device |
| CN102064678A (en) * | 2010-11-29 | 2011-05-18 | Bcd半导体制造有限公司 | Gate drive circuit of switch power supply |
| US20130082742A1 (en) * | 2011-06-30 | 2013-04-04 | Chengdu Monolithic Power Systems Co., Ltd. | Load detecting circuits and the method thereof |
| CN103575964A (en) * | 2012-07-19 | 2014-02-12 | 快捷半导体(苏州)有限公司 | Over-current detection circuit and method for power switch tube |
| CN103969494A (en) * | 2014-04-30 | 2014-08-06 | 广州钧衡微电子科技有限公司 | High-precision current detecting circuit and current-limiting device applying same |
| CN104897943A (en) * | 2015-04-30 | 2015-09-09 | 中国电子科技集团公司第五十八研究所 | High-sensitivity low-power current detection circuit |
| CN208581167U (en) * | 2018-08-20 | 2019-03-05 | 无锡麟力科技有限公司 | A kind of switching-on and switching-off state detection circuit |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111650530A (en) * | 2020-06-30 | 2020-09-11 | 上海南麟电子股份有限公司 | Power switch state detection circuit |
| CN111650530B (en) * | 2020-06-30 | 2022-06-21 | 上海南麟电子股份有限公司 | Power switch state detection circuit |
| CN113933699A (en) * | 2021-10-18 | 2022-01-14 | 杭州优恩捷科技有限公司 | High-reliability passive switch on-off state detection circuit |
| CN113933699B (en) * | 2021-10-18 | 2023-09-26 | 杭州优恩捷科技有限公司 | High-reliability passive switch on-off state detection circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109039071B (en) | 2023-12-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103575964B (en) | A kind of over-current detection circuit of power switch pipe and method | |
| CN208581167U (en) | A kind of switching-on and switching-off state detection circuit | |
| CN107565684B (en) | Integrated AC detection and power control system for emergency lighting | |
| CN101826724B (en) | Anti-reverse connection circuit of direct current power supply | |
| CN209462021U (en) | A kind of reverse connection preventing over-pressure safety device, earphone and USB charging unit | |
| CN201408985Y (en) | Short-circuit protection circuit for switching power supply | |
| CN109039071A (en) | A kind of switching-on and switching-off state detection circuit | |
| CN108964643A (en) | A kind of drive control circuit and control method of the power device at current mirror end | |
| CN104218558B (en) | Anti-surging high tension protection circuit | |
| CN111525538A (en) | Constant-voltage output anti-backflow circuit and constant-voltage output power circuit | |
| CN101153880A (en) | Negative voltage detector | |
| CN103023004A (en) | Surge suppression circuit | |
| CN105306030A (en) | Main power circuit for alternating current solid state power controller | |
| CN106300248B (en) | A kind of under-voltage protecting circuit of current control mode | |
| CN107645235A (en) | A kind of current-limiting protection circuit, guard method and switching power circuit | |
| CN205657584U (en) | Two -stage discharge device and converter | |
| CN108899876A (en) | The short circuit protection system at current detecting end in Switching Power Supply | |
| CN103683215B (en) | Short-circuit protection circuit of electronic switch | |
| CN108141030B (en) | Protect circuit | |
| CN208890764U (en) | Power amplifier and chip with overcurrent protection function | |
| CN109066598A (en) | A kind of low level triggering latching circuit | |
| CN108233701A (en) | A kind of buck voltage conversion circuit | |
| CN105468081B (en) | Mu balanced circuit with low pressure detection and its method for stabilizing voltage | |
| CN202405740U (en) | Current-limiting protection circuit of alternating current power supply loop | |
| CN208539869U (en) | Comparator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |