CN116053330A - 一种新型perc太阳能电池及其制备方法 - Google Patents
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Abstract
本发明涉及光伏技术领域,尤其涉及一种新型PERC太阳能电池及其制备方法。太阳能电池包括层叠设置的局部正极、正极面减反射层、氧化硅层、掺杂层、P型硅衬底、钝化层、负极面减反射层、局部宽带隙化合物选择传输层或具有局部钝化层的局部宽带隙化合物选择传输层、局部负极。本发明通过对界面附近的良好钝化确保电荷载流子不会在接触处复合,而良好的载流子选择性接触决定了电荷载流子在阻挡相反类型的电荷载流子的界面处聚集的最大量。本发明使用宽带隙化合物作为载流子选择性接触,替代金属和硅衬底的直接接触,克服了PERC电池局部金属接触复合损耗高这一缺点,提高了短路电流密度和开路电压。
Description
技术领域
本发明涉及光伏技术领域,尤其涉及一种新型PERC太阳能电池及其制备方法。
背景技术
研究表明,光伏能源转换有望在本世纪中叶成为遏制全球变暖的领先技术。基于晶硅的光伏器件由于纯度高、缺陷最小、少数载流子寿命高,具有高功率转换效率的优势,但是c-Si/金属接触界面存在较高的表面复合速度,含铝背场的c-Si太阳能电池(Al-BSF)具有光学复合、体复合和背面复合等多种损失,限制了太阳能电池的转化效率,因此被先进的钝化发射极及背面接触(PERC)结构所取代。2019年,钝化发射极和后电池(PERC)设计已经接管了全球光伏太阳能电池的大部分生产,成为行业的主流产品,在工业水平上实现了超过20%的转换效率。而且双面PERC电池在几乎不增加制造成本的情况下实现双面发电,提升发电量,极大地提升了PERC技术的竞争力与未来发展潜力。但仍由于复合和吸收损失,PERC太阳能电池器件的设计依然是一个挑战,这最终限制了器件的性能达到了29.4%的俄歇效率极限。
根据复合理论,复合率越高少子扩散长度越短,开路电压也就越低。良好的背面钝化效果有益于提升电池的开路电压、短路电流及填充因子,进而提升电池转化效率。目前的铝背面场可以提供一定的场钝化效果,但Al作为受主杂质在硅材料内部的固溶度较低,铝背场提供的场钝化效果比较弱,导致表面复合损失。尽管PERC技术比其Al BSF前身具有更高的效率潜力,克服了完全金属化背面的表面复合损耗的限制,在正面和背面施加介质钝化层,并通过局部形成接触限制金属化分数,可以实现优异的表面钝化。但其重掺杂结中的带隙变窄和俄歇复合,以及局部金属接触区域中的表面复合也会受到影响。尽管通过进一步地降低金属化分数可以将相关的接触复合损耗降至最低,但折衷的办法是增加电阻损耗。说明PERC技术还需要进一步地改进,以满足日益增长的效率需求。
发明内容
为了克服上述现有技术的不足,本发明提供了一种新型PERC太阳能电池及其制备方法,通过克服局部金属接触区域中的表面复合,进一步地增强PERC太阳能电池背表面的钝化效果,降低接触相关的复合损耗。
为了解决本发明的上述技术问题,本发明提供采用以下技术方案:
为了实现上述目的,本发明所采用的技术方案是:
本发明的第一目的是提供一种新型PERC太阳能电池,所述太阳能电池包括层叠设置的局部正极、正极面减反射层、氧化硅层、掺杂层、P型硅衬底、钝化层、负极面减反射层、局部宽带隙化合物选择传输层或具有局部钝化层的局部宽带隙化合物选择传输层、局部负极。
进一步地,所述局部正极的材料为Al、Ca/Al、Mg/Al、Mg/Ag、Cu、Ag、Ti/Pd/Ag、Ti/Au/Ag、LiFx/Al、RbFx/Al中的任意一种;
所述局部负极的材料为Al、Ca/Al、Mg/Al、Mg/Ag、Cu、Au、Ag、Ti/Pd/Ag、Ti/Au/Ag中的任意一种。
进一步地,所述正极面减反射层的材料为氮化硅、氧化硅、氧化铝、氧化钛、氧化钼、氧化锌、掺杂氧化锌、硫化锌、碳化硅、掺杂氧化硅、氧化钽、氟化镁、氧化锆、氧化铪中的一种或几种叠层;
所述负极面减反层的材料为氮化硅、氧化硅、氧化铝、氧化钛、氧化钼、氧化锌、掺杂氧化锌、硫化锌、碳化硅、掺杂氧化硅、氧化钽、氟化镁、氧化锆、氧化铪中的一种或几种叠层。
进一步地,所述正极面减反射层的厚度为20-200nm;负极面减反射层的厚度为20-200nm;所述氧化硅层的厚度为0.1-30nm;所述钝化层的厚度为0.1-30nm。
进一步地,所述钝化层的材料为氢化非晶硅、氢化非晶氧化硅、氢化纳米氧化硅、氢化纳米碳化硅、氮氧化硅、氧化钛、氧化硅、氧化铝中的一种或几种叠层。
进一步地,所述局部宽带隙化合物选择传输层的材料为碘化亚铜、氯化亚铜、溴化亚铜、氧化镍、氧化钴、氧化钒、氧化钨、氧化钼中的一种或几种叠层;所述局部宽带隙化合物选择传输层的厚度为0.1-30nm。
进一步地,所述具有局部钝化层的局部宽带隙化合物选择传输层中的局部钝化层的材料为氢化非晶硅、氢化非晶氧化硅、氢化纳米氧化硅、氢化纳米碳化硅、氮氧化硅、氧化钛、氧化硅、氧化铝中的一种或多种叠层,其厚度为0.1-10nm。
本发明的第二目的是提供一种新型PERC太阳能电池的制备方法,包括如下步骤:对P型硅衬底进行制绒清洗,然后通过扩散掺杂单面掺入磷,形成PN结,在掺杂层上制备氧化硅层,并沉积具有开槽的正极面减反射层,在开槽处蒸镀局部正极,在P型硅的另一面沉积钝化层和负极面减反射层,然后制备局部宽带隙化合物选择传输层或具有局部钝化层的局部宽带隙化合物选择传输层,最后在局部宽带隙化合物选择传输层或具有局部钝化层的局部宽带隙化合物选择传输层上蒸镀局部负极。
进一步地,所述局部宽带隙化合物选择传输层是通过旋涂法、热蒸镀法、磁控溅射法、化学气相沉积法、电子束蒸发法、喷雾热解法、原子层沉积中的任意一种方法制备而成;
所述正极面减反射层或负极面减反射层是通过溶胶凝胶法、热丝氧化升华法、磁控溅射法、化学气相沉积法、电子束蒸发法、化学沉淀法、超重力法、微乳液法中的任意一种方法制备而成。
与现有技术相比,本发明的有益效果是:
1、由于形成发射极结和产生局部背表面场所需的高浓度掺杂剂,这些层中的俄歇复合损耗很高,增加了复合电流J0并降低了开路电压VOC。对于具有良好性能的太阳能电池,钝化和载流子选择性都是至关重要的。本发明通过对界面附近的良好钝化确保电荷载流子不会在接触处复合,而良好的载流子选择性接触决定了电荷载流子在阻挡相反类型的电荷载流子的界面处聚集的最大量。
2、具有高功函或低功函的宽带隙化合物和晶体硅结合能够引起能带的非对称弯曲,为SHJ太阳能电池提供了优异的载流子选择性,并且具有一定的钝化效果,本发明使用宽带隙化合物作为载流子选择性接触,替代金属和硅衬底的直接接触,克服了PERC电池局部金属接触复合损耗高这一缺点,提高了短路电流密度和开路电压。也可以通过在宽带隙化合物和Si之间增加一层局部钝化层来进一步增强表面接触的钝化效果。同时宽带隙化合物通过低温沉积或基于溶液法,如旋涂和蒸镀工艺,在低成本和工艺简化方面提供了巨大的潜力,并且宽带隙化合物的制备无需掺杂,低温制备,避免有毒材料的使用,并且宽带隙化合物材料的局部接触有效降低了接触复合损耗。
附图说明
为了更清楚地说明本发明实施例的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,应当理解,以下附图仅示出了本发明的某些实施例,因此不应被看作是对范围的限定,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他相关的附图。
图1为本发明实施例1制备的PERC太阳能电池结构示意图;
图2为本发明实施例1制备的PERC太阳能电池的J-V曲线图;
图3为本发明实施例2制备的PERC太阳能电池结构示意图;
附图标记如下:
1、局部正极;2、正极面减反射层;3、氧化硅层;4、n+掺杂层;5、局部n++重掺杂层;6、P型硅衬底;7、钝化层;8、负极面减反射层;9、局部宽带隙化合物选择传输层;10、局部负极;11、局部钝化层。
具体实施方式
为使本发明的目的、技术方案和优点更加明白清楚,结合具体实施方式对本发明做进一步完整的描述,但并不构成对本发明的限定。此外,下面所描述的本发明各个实施方式中所涉及的技术特征只要彼此之间未构成冲突就可以相互组合形成新的实施例。下述实施例中的实验方法,如无特殊说明,均为常规方法。
下面结合附图(图1-3)和具体实施方式对本发明技术方案做进一步地详细的描述。
实施例1:制备PERC太阳能电池
如图1所示,新型PERC太阳能电池的结构为:以P型硅片6为衬底,P型硅衬底6的正表面有磷n+掺杂层4和局部n++重掺杂层5,掺杂层表面依次制备具有开槽的氧化硅层3和正极面减反射层2,在开槽处制备有局部正极1,局部正极1下方是局部n++重掺杂层5;P型硅衬底6的背表面设置有钝化层7、负极面减反射层8、局部宽带隙化合物选择传输层9和局部负极10;正极面减反射层2的材料为氮化硅,钝化层7的材料为氧化铝,局部宽带隙化合物选择传输层9的材料为氧化钒,局部正极1和局部负极10均为局部银电极。
新型PERC太阳能电池的制备具体包括以下步骤:
(1)对P型硅衬底6进行双面制绒与清洗:用碱溶液与硅衬底反应,各向异性腐蚀形成金字塔状,去除表面损失层,降低表面反射率。
(2)在P型硅衬底6前表面进行掺杂:采用三氯氧磷液态源高温扩散方法,在硅片表面形成n+掺杂层4,即n+发射结层,在n+掺杂层4上再进行局部区域的选择性扩散,使n+掺杂层4与P型硅衬底6之间形成局部n++重掺杂层5,得到pn结的硅片。
(3)制备氧化硅层3:将已经形成pn结的硅片放入高温炉中,在850℃下与氧化剂进行反应,得到厚度为15nm的氧化硅层3。
(4)制备正极面减反射层2:正极面减反射层2材料选取氮化硅材料,采用等离子体增强化学气相沉积法(PECVD)制备85nm厚的正极面减反射层2:PECVD通过射频电源辉光放电分解SiN4和NH3,形成的Si和N离子在氧化硅上结合形成负极面减反射层2。
(5)采用等离子体增强化学气相沉积法(PECVD)制备一层15nm氧化铝钝化层7和一层75nm保护层负极面减反射层8,负极面减反射层8材料选取氮化硅材料,形成氧化铝-氮化硅钝化叠层。
(6)对背面钝化叠层进行激光开槽:采用激光刻蚀,将P型硅衬底背表面的氧化铝-氮化硅钝化叠层选择性刻蚀掉,进行开槽。
(7)采用原子层沉积法(ALD)在P型硅衬底6背表面钝化叠层开槽处制备4.5nm厚的氧化钒局部宽带隙化合物选择传输层9。
(8)采用真空蒸镀,将银颗粒放入钨舟中,再置入真空蒸镀设备腔体中,以3nm/s的生长速度在太阳能电池正表面和背表面制备300nm厚的局部银正极1和局部银负极10,得PERC太阳能电池。
采用太阳能电池伏安特性测试系统测定所制备实施例PERC太阳能电池的短路电流密度为40.2mA/cm2、开路电压685mV、转换效率为20.07%,结果如图2所示。
实施例2:制备PERC太阳能电池
如图3所示,新型PERC太阳能电池的结构为:以P型硅片6为衬底,P型硅衬底6的正表面有磷n+掺杂层4和局部n++重掺杂层5,掺杂层表面依次制备具有开槽的氧化硅层3和正极面减反射层2,在开槽处制备有局部正极1,局部正极1下方是局部n++重掺杂层5;P型硅衬底6的背表面设置有钝化层7、负极面减反射层8、具有局部钝化层11的局部宽带隙化合物选择传输层9和局部负极10;正极面减反射层2的材料为氮化硅,钝化层7的材料为氧化铝,局部宽带隙化合物选择传输层9的材料为氧化钒,局部正极1和局部负极10均为局部银电极,局部钝化层11的材料为氧化铝。
新型PERC太阳能电池的制备具体包括以下步骤:
(1)对P型硅衬底6进行双面制绒与清洗:用碱溶液与硅衬底反应,各向异性腐蚀形成金字塔状,去除表面损失层,降低表面反射率。
(2)在P型硅衬底6前表面进行掺杂:采用三氯氧磷液态源高温扩散方法,在硅片表面形成n+掺杂层4,即n+发射结层,在n+掺杂层4上再进行局部区域的选择性扩散,使n+掺杂层4与P型硅衬底6之间形成局部n++重掺杂层5,得到pn结的硅片。
(3)制备氧化硅层3:将已经形成pn结的硅片放入高温炉中,在850℃下与氧化剂进行反应,得到厚度为15nm的氧化硅层3。
(4)制备正极面减反射层2:正极面减反射层2材料选取氮化硅材料,采用等离子体增强化学气相沉积法(PECVD)制备85nm厚的正极面减反射层2:PECVD通过射频电源辉光放电分解SiN4和NH3,形成的Si和N离子在氧化硅上结合形成负极面减反射层2。
(5)采用等离子体增强化学气相沉积法(PECVD)制备一层15nm氧化铝钝化层7、局部钝化层11和一层75nm保护层负极面减反射层8,负极面减反射层8材料选取氮化硅材料,形成氧化铝-氮化硅钝化叠层。
(6)对背面钝化叠层进行激光开槽:采用激光刻蚀,将P型硅衬底背表面的氧化铝-氮化硅钝化叠层选择性刻蚀掉,进行开槽。
(7)采用原子层沉积法(ALD)在P型硅衬底6背表面钝化叠层开槽处制备4.5nm厚的氧化钒局部宽带隙化合物选择传输层9。
(8)采用真空蒸镀,将银颗粒放入钨舟中,再置入真空蒸镀设备腔体中,以3nm/s的生长速度在太阳能电池正表面和背表面制备300nm厚的局部银正极1和局部银负极10,得PERC太阳能电池。
图3的PERC太阳能电池结构在电池背面采用具有局部钝化层11的局部宽带隙化合物选择传输层9,局部钝化层11能够为局部宽带隙化合物选择传输层9和P型硅衬底6提供良好的钝化接触。
上面对本专利的较佳实施方式作了详细说明,但是本专利并不限于上述实施方式,在本领域的普通技术人员所具备的知识范围内,还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明权利要求的保护范围之内。
Claims (9)
1.一种新型PERC太阳能电池,其特征在于,所述太阳能电池包括层叠设置的局部正极、正极面减反射层、氧化硅层、掺杂层、P型硅衬底、钝化层、负极面减反射层、局部宽带隙化合物选择传输层或具有局部钝化层的局部宽带隙化合物选择传输层、局部负极。
2.根据权利要求1所述的新型PERC太阳能电池,其特征在于,所述局部正极的材料为Al、Ca/Al、Mg/Al、Mg/Ag、Cu、Ag、Ti/Pd/Ag、Ti/Au/Ag、LiFx/Al、RbFx/Al中的任意一种;
所述局部负极的材料为Al、Ca/Al、Mg/Al、Mg/Ag、Cu、Au、Ag、Ti/Pd/Ag、Ti/Au/Ag中的任意一种。
3.根据权利要求1所述的新型PERC太阳能电池,其特征在于,所述正极面减反射层的材料为氮化硅、氧化硅、氧化铝、氧化钛、氧化钼、氧化锌、掺杂氧化锌、硫化锌、碳化硅、掺杂氧化硅、氧化钽、氟化镁、氧化锆、氧化铪中的一种或几种叠层;
所述负极面减反层的材料为氮化硅、氧化硅、氧化铝、氧化钛、氧化钼、氧化锌、掺杂氧化锌、硫化锌、碳化硅、掺杂氧化硅、氧化钽、氟化镁、氧化锆、氧化铪中的一种或几种叠层。
4.根据权利要求1所述的新型PERC太阳能电池,其特征在于,所述正极面减反射层的厚度为20-200nm;负极面减反射层的厚度为20-200nm;所述氧化硅层的厚度为0.1-30nm;所述钝化层的厚度为0.1-30nm。
5.根据权利要求1所述的新型PERC太阳能电池,其特征在于,所述钝化层的材料为氢化非晶硅、氢化非晶氧化硅、氢化纳米氧化硅、氢化纳米碳化硅、氮氧化硅、氧化钛、氧化硅、氧化铝中的一种或几种叠层。
6.根据权利要求1所述的新型PERC太阳能电池,其特征在于,所述局部宽带隙化合物选择传输层的材料为碘化亚铜、氯化亚铜、溴化亚铜、氧化镍、氧化钴、氧化钒、氧化钨、氧化钼中的一种或几种叠层;所述局部宽带隙化合物选择传输层的厚度为0.1-30nm。
7.根据权利要求1所述的新型PERC太阳能电池,其特征在于,所述具有局部钝化层的局部宽带隙化合物选择传输层中的局部钝化层的材料为氢化非晶硅、氢化非晶氧化硅、氢化纳米氧化硅、氢化纳米碳化硅、氮氧化硅、氧化钛、氧化硅、氧化铝中的一种或多种叠层,其厚度为0.1-10nm。
8.权利要求1-7任一项所述新型PERC太阳能电池的制备方法,其特征在于,包括如下步骤:对P型硅衬底进行制绒清洗,然后通过扩散掺杂单面掺入磷,形成PN结,在掺杂层上制备氧化硅层,并沉积具有开槽的正极面减反射层,在开槽处蒸镀局部正极,在P型硅的另一面沉积钝化层和负极面减反射层,然后制备局部宽带隙化合物选择传输层或具有局部钝化层的局部宽带隙化合物选择传输层,最后在局部宽带隙化合物选择传输层或具有局部钝化层的局部宽带隙化合物选择传输层上蒸镀局部负极。
9.根据权利要求8所述的制备方法,其特征在于,所述局部宽带隙化合物选择传输层是通过旋涂法、热蒸镀法、磁控溅射法、化学气相沉积法、电子束蒸发法、喷雾热解法、原子层沉积中的任意一种方法制备而成;
所述正极面减反射层或负极面减反射层是通过溶胶凝胶法、热丝氧化升华法、磁控溅射法、化学气相沉积法、电子束蒸发法、化学沉淀法、超重力法、微乳液法中的任意一种方法制备而成。
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