CN111430475A - 高效p型晶体硅太阳能电池及其制备方法 - Google Patents
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Abstract
本发明提供了一种高效P型晶体硅太阳能电池及其制备方法，属于半导体技术领域。它包括硅片，在硅片的正面依次沉积有掺磷N型扩散层、二氧化硅薄膜、掺杂型多晶硅薄膜、透明导电薄膜和减反膜，在硅片的背面沉积有钝化膜。本发明解决了电池正面的发射极及金属接触区的复合电流密度偏高，同时减弱多晶硅薄膜正面吸光性问题，提供了一种兼顾吸光性及钝化性能的高效P型电池及其制备方法。
Description
技术领域
本发明属于半导体技术领域，涉及一种高效P型晶体硅太阳能电池及其制备方法。
背景技术
近年来，光伏产业化技术发展迅速，各个制造环节均有技术更新。新技术、新工艺带来的是更低的成本及更优的产品性能。最近几年国内晶体硅太阳电池技术的进展仍旧主要集中在PERC电池的产业导入上，虽然P-型PERC电池的产能一直在增长，但是其产业化效率增长或许已接近饱，因此迫切需要开发下一代的PERC电池，希望能在原有产线的基础上，尽量减少工艺改动而实现产品性能及成本的突破。
发明内容
本发明的目的是针对上述问题，提供一种高效P型晶体硅太阳能电池。
本发明的另一目的是提供一种高效P型晶体硅太阳能电池的制备方法。
为达到上述目的，本发明采用了下列技术方案：
一种高效P型晶体硅太阳能电池，包括硅片，在硅片的正面依次沉积有掺磷N型扩散层、二氧化硅薄膜、掺杂型多晶硅薄膜、透明导电薄膜和减反膜，在硅片的背面沉积有钝化膜。
进一步的，掺磷N型扩散层通过单独的磷掺杂工艺、多晶硅薄膜的薄膜掺杂或者退激活工艺得到，二氧化硅薄膜通过热氧化、湿法氧化或者暴露于强氧化性气体中得到，所述的掺杂型多晶硅薄膜为原位掺磷的多晶硅薄膜或本征多晶硅薄膜。
进一步的，所述的透明导电薄膜为含铟、锡、锌、镉、钛的其中一种或多种的金属氧化物和/或氮化物薄膜。
进一步的，所述的减反膜为多层SiNx薄膜、SiOx薄膜或AlOx薄膜，或者为SiNx薄膜、SiOx薄膜和AlOx薄膜两种及以上的组合。
进一步的，所述的钝化膜为叠层SiNx薄膜、叠层SiNx/SiOx薄膜或叠层SiNx/AlOx薄膜，或者为SiNx薄膜、叠层SiNx/SiOx薄膜和叠层SiNx/AlOx薄膜两种及以上的组合。
进一步的，二氧化硅薄膜的厚度为0.3-10nm，掺杂型多晶硅薄膜的厚度为2-300nm，透明导电薄膜的厚度为2-300nm，减反膜的厚度为2-300nm，钝化膜的厚度为10-300nm，掺磷N型扩散层方块电阻为50-500ohm/◇。
一种高效P型晶体硅太阳能电池的制备方法，包括以下步骤：
1)硅片经过清洗后，通过管式磷扩散形成掺磷N型扩散层，
2)在掺磷N型扩散层表面生长一层二氧化硅薄膜；
3)在二氧化硅薄膜上上沉积掺杂型多晶硅薄膜；
4)在掺杂型多晶硅薄膜上沉积透明导电薄膜；
5)在透明导电薄膜上沉积减反膜；
6)去掉硅片背面的减反膜、透明导电薄膜和掺杂型多晶硅薄膜；
7)硅片背面进行抛光或制绒处理；
8)在硅片背面沉积钝化膜。
8、根据权利要求7所述的高效P型晶体硅太阳能电池的制备方法，其特征在于，还包括以下步骤：
9)激光布局开孔；
10)印刷金属浆料、烧结及退火。
进一步的，在步骤2中，生长二氧化硅薄膜为湿法氧化或热氧化工艺，当选择热氧化工艺时，步骤2和3同时进行，
在步骤3中，掺杂型多晶硅薄膜为原位掺磷的多晶硅薄膜或本征多晶硅薄膜，当为本征多晶硅薄膜时，采用管式气态源扩散、旋涂掺杂源、离子注入或丝网印刷磷浆从外部引入掺杂源，当为原位掺磷的多晶硅薄膜时，采用高温退火，以激活掺杂原子，退火温度为500-1050℃，时间1-300min；
在步骤4中，沉积方式为溅射、ALD、LPCVD、PECVD、MOCVD或PVD；
在步骤5中，沉积方式为ALD或PECVD；
在步骤6中，采用干法或者湿法方式，干法方式为等离子体刻蚀，湿法用酸液或者碱液腐蚀。
进一步的，在步骤10中，印刷金属浆料为烧穿型或非烧穿型，当为非烧穿型时，用激光、刻蚀浆料或者阻挡线浆料的方式将硅片表面的相应的膜打开，烧结后形成接触。
与现有的技术相比，本发明的优点在于：解决了电池正面的发射极及金属接触区的复合电流密度偏高，同时减弱多晶硅薄膜正面吸光性问题，提供了一种兼顾吸光性及钝化性能的高效P型电池及其制备方法。通过精确的模拟计算，该新型结构的高效电池效率可以达到24％，较传统PERC电池结构的电池效率提升1.5％-2％abs。
本发明的其它优点、目标和特征将部分通过下面的说明体现，部分还将通过对本发明的研究和实践而为本领域的技术人员所理解。
附图说明
图1是本发明高效P型晶体硅太阳能电池的示意图。
图中：硅片1、掺磷N型扩散层1a、二氧化硅薄膜2、掺杂型多晶硅薄膜3、透明导电薄膜4、减反膜5、钝化膜6、正面电极7、背面电极8。
具体实施方式
下面结合附图对本发明进行进一步说明。
实施例1
如图1所示，一种高效P型晶体硅太阳能电池，包括硅片1，在硅片1的正面依次沉积有掺磷N型扩散层1a、二氧化硅薄膜2、掺杂型多晶硅薄膜3、透明导电薄膜4和减反膜5，在硅片1的背面沉积有钝化膜6。
具体的说，掺磷N型扩散层通过单独的磷掺杂工艺、多晶硅薄膜的薄膜掺杂或者退激活工艺得到，二氧化硅薄膜通过热氧化、湿法氧化或者暴露于强氧化性气体中得到，掺杂型多晶硅薄膜3为原位掺磷的多晶硅薄膜或本征多晶硅薄膜。透明导电薄膜4为含铟、锡、锌、镉、钛的其中一种或多种的金属氧化物和/或氮化物薄膜。减反膜5为多层SiNx薄膜、SiOx薄膜或AlOx薄膜，或者为SiNx薄膜、SiOx薄膜和AlOx薄膜两种及以上的组合。钝化膜6为叠层SiNx薄膜、叠层SiNx/SiOx薄膜或叠层SiNx/AlOx薄膜，或者为SiNx薄膜、叠层SiNx/SiOx薄膜和叠层SiNx/AlOx薄膜两种及以上的组合。
二氧化硅薄膜2的厚度为0.3-10nm，掺杂型多晶硅薄膜3的厚度为2-300nm，透明导电薄膜4的厚度为2-300nm，减反膜5的厚度为2-300nm，钝化膜6的厚度为10-300nm，掺磷N型扩散层方块电阻为50-500ohm/◇。
减反膜5连接有正面电极7，硅片1背面及钝化膜6连接有背面电极8，正面电极7和背面电极8分别用金属浆料烧结制成。
实施例2
一种制备实施例1中的高效P型晶体硅太阳能电池的制备方法，包括以下步骤：
1)硅片经过清洗后，通过管式磷扩散形成掺磷N型扩散层，
2)在掺磷N型扩散层表面生长一层二氧化硅薄膜2；
3)在二氧化硅薄膜2上上沉积掺杂型多晶硅薄膜3；
4)在掺杂型多晶硅薄膜3上沉积透明导电薄膜4；
5)在透明导电薄膜4上沉积减反膜5；
6)去掉硅片1背面的减反膜5、透明导电薄膜4和掺杂型多晶硅薄膜3；
7)硅片1背面进行抛光或制绒处理；在该步骤中，硅片1背面的二氧化硅薄膜2可以全部打磨掉，也可以保留部分；
8)在硅片1背面沉积钝化膜6；
9)激光布局开孔；
10)印刷金属浆料、烧结及退火。
具体的说，在步骤2中，生长二氧化硅薄膜为湿法氧化或热氧化工艺，当选择热氧化工艺时，步骤2和3同时进行，
在步骤3中，掺杂型多晶硅薄膜为原位掺磷的多晶硅薄膜或本征多晶硅薄膜，当为本征多晶硅薄膜时，采用管式气态源扩散、旋涂掺杂源、离子注入或丝网印刷磷浆从外部引入掺杂源，当为原位掺磷的多晶硅薄膜时，采用高温退火，以激活掺杂原子，退火温度为500-1050℃，时间1-300min；无论原位掺磷还是外部源掺磷，在期高温掺杂或者激活过程中，磷原子会扩散进入硅片体内，形成步骤1所需要的掺磷N型扩散层，在此种情况下，步骤1时间可以缩短或者温度降低，或者可以直接省略；
在步骤4中，沉积方式为溅射、ALD、LPCVD、PECVD、MOCVD或PVD；
在步骤5中，沉积方式为ALD或PECVD；
在步骤6中，采用干法或者湿法方式，干法方式为等离子体刻蚀，湿法用酸液或者碱液腐蚀；
在步骤10中，印刷金属浆料为烧穿型或非烧穿型，当为非烧穿型时，用激光、刻蚀浆料或者阻挡线浆料的方式将硅片1表面的相应的膜打开，烧结后形成接触。
实施例3
一种制备实施例1中的高效P型晶体硅太阳能电池的制备方法，包括以下步骤：
1.采用P型单晶硅衬底，经过抛光制绒后，在管式氧化炉内生长一层薄二氧化硅层，厚度为1.4nm。
2.在薄二氧化硅层上用低压化学气相沉积方式沉积掺杂多晶硅薄膜，其厚度为20nm。掺杂剂为PH3。
3.在多晶硅薄膜上用LPCVD沉积掺硼的氧化锌薄膜，其厚度为50nm。
4.在氧化锌薄膜上用PECVD沉积AlOx/SiNx减反膜，氧化铝薄膜厚度为10nm，氮化硅薄膜厚度为50nm。
5.采用单面刻蚀设备，用5％HF溶液依次刻蚀掉背面绕镀的AlOx/SiNx薄膜，氧化锌薄膜。
6.用5％的KOH溶液刻掉掉背面绕镀的多晶硅薄膜，同时对硅片背面进行抛光处理。
7.用PECVD在硅片背面沉积AlOx/SiNx薄膜。
8.激光局部开孔。
9.印刷背银并烘干，印刷背面铝浆并烘干，印刷正面银浆，共烧，退火。
本文中所描述的具体实施例仅仅是对本发明精神作举例说明。本发明所属技术领域的技术人员可以对所描述的具体实施例做各种各样的修改或补充或采用类似的方式替代，但并不会偏离本发明的精神。
Claims (10)
1.一种高效P型晶体硅太阳能电池，包括硅片(1)，其特征在于，在硅片(1)的正面依次沉积有掺磷N型扩散层(1a)、二氧化硅薄膜(2)、掺杂型多晶硅薄膜(3)、透明导电薄膜(4)和减反膜(5)，在硅片(1)的背面沉积有钝化膜(6)。
2.根据权利要求1所述的高效P型晶体硅太阳能电池，其特征在于，掺磷N型扩散层(1a)通过单独的磷掺杂工艺、多晶硅薄膜的薄膜掺杂或者退激活工艺得到，二氧化硅薄膜(2)通过热氧化、湿法氧化或者暴露于强氧化性气体中得到，所述的掺杂型多晶硅薄膜(3)为原位掺磷的多晶硅薄膜或本征多晶硅薄膜。
3.根据权利要求1所述的高效P型晶体硅太阳能电池，其特征在于，所述的透明导电薄膜(4)为含铟、锡、锌、镉、钛的其中一种或多种的金属氧化物和/或氮化物薄膜。
4.根据权利要求1所述的高效P型晶体硅太阳能电池，其特征在于，所述的减反膜(5)为多层SiNx薄膜、SiOx薄膜或AlOx薄膜，或者为SiNx薄膜、SiOx薄膜和AlOx薄膜两种及以上的组合。
5.根据权利要求1所述的高效P型晶体硅太阳能电池，其特征在于，所述的钝化膜(6)为叠层SiNx薄膜、叠层SiNx/SiOx薄膜或叠层SiNx/AlOx薄膜，或者为SiNx薄膜、叠层SiNx/SiOx薄膜和叠层SiNx/AlOx薄膜两种及以上的组合。
6.根据权利要求1所述的高效P型晶体硅太阳能电池，其特征在于，二氧化硅薄膜(2)的厚度为0.3-10nm，掺杂型多晶硅薄膜(3)的厚度为2-300nm，透明导电薄膜(4)的厚度为2-300nm，减反膜(5)的厚度为2-300nm，钝化膜(6)的厚度为10-300nm，掺磷N型扩散层(1a)方块电阻为50-500ohm/◇。
7.一种根据权利要求1-6任意一项所述的高效P型晶体硅太阳能电池的制备方法，其特征在于，包括以下步骤：
1)硅片(1)经过清洗后，通过管式磷扩散形成掺磷N型扩散层(1a)，
2)在掺磷N型扩散层(1a)表面生长一层二氧化硅薄膜(2)；
3)在二氧化硅薄膜(2)上上沉积掺杂型多晶硅薄膜(3)；
4)在掺杂型多晶硅薄膜(3)上沉积透明导电薄膜(4)；
5)在透明导电薄膜(4)上沉积减反膜(5)；
6)去掉硅片(1)背面的减反膜(5)、透明导电薄膜(4)和掺杂型多晶硅薄膜(3)；
7)硅片(1)背面进行抛光或制绒处理；
8)在硅片(1)背面沉积钝化膜(6)。
8.根据权利要求7所述的高效P型晶体硅太阳能电池的制备方法，其特征在于，还包括以下步骤：
9)激光布局开孔；
10)印刷金属浆料、烧结及退火。
9.根据权利要求7所述的高效P型晶体硅太阳能电池的制备方法，其特征在于，在步骤2中，生长二氧化硅薄膜(2)为湿法氧化或热氧化工艺，当选择热氧化工艺时，步骤2和3同时进行，
在步骤3中，掺杂型多晶硅薄膜(3)为原位掺磷的多晶硅薄膜或本征多晶硅薄膜，当为本征多晶硅薄膜时，采用管式气态源扩散、旋涂掺杂源、离子注入或丝网印刷磷浆从外部引入掺杂源，当为原位掺磷的多晶硅薄膜时，采用高温退火，以激活掺杂原子，退火温度为500-1050℃，时间1-300min；
在步骤4中，沉积方式为溅射、ALD、LPCVD、PECVD、MOCVD或PVD；
在步骤5中，沉积方式为ALD或PECVD；
在步骤6中，采用干法或者湿法方式，干法方式为等离子体刻蚀，湿法用酸液或者碱液腐蚀。
10.根据权利要求8所述的高效P型晶体硅太阳能电池的制备方法，其特征在于，在步骤10中，印刷金属浆料为烧穿型或非烧穿型，当为非烧穿型时，用激光、刻蚀浆料或者阻挡线浆料的方式将硅片(1)表面的相应的膜打开，烧结形成接触。
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