CN112310231A - 具有隧穿钝化的p型晶体硅太阳能电池及其制备方法 - Google Patents
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Abstract
本发明属于晶体硅太阳能电池技术领域,涉及一种具有隧穿钝化的P型晶体硅太阳能电池及其制备方法,包括P型衬底,其特征在于,所述的P型衬底正面由内到外依次设有选择性发射极、超薄隧穿氧化硅层、磷掺杂多晶硅层、正面氧化硅钝化层和正面氮化硅钝化层,所述的P型衬底背面由内到外依次背面氧化铝钝化层和背面氮化硅化层,正面氮化硅钝化层上设有正面金属银栅线,P型衬底背面设有背面金属铝栅线,所述的背面金属铝栅线贯穿背面氧化铝钝化层和背面氮化硅化层。本发明结构非常薄,在解决硅片光吸收的同时,有效地降低了电池的表面复合速率,提高电池的正面钝化,提升电池性能。
Description
技术领域
本发明属于晶体硅太阳能电池技术领域,涉及一种图形化的钝化接触太阳能电池及其制造方法。
背景技术
近年来,光伏产业化技术发展迅速,各个制造环节均有技术更新。新技术、新工艺带来的是更低的成本及更优的产品性能。最近几年国内晶体硅太阳电池技术的进展仍旧主要集中在PERC电池的产业导入上,虽然P-型PERC电池的产能一直在增长,但是其产业化效率增长或许已接近饱和,因此迫切需要开发下一代的PERC电池,希望能在原有产线的基础上,尽量减少工艺改动而实现产品性能及成本的突破。
发明内容
本发明的目的是针对上述问题,提供一种具有隧穿钝化的P型晶体硅太阳能电池。
本发明的另一目的是提供一种具有隧穿钝化的P型晶体硅太阳能电池的制备方法。
为达到上述目的,本发明采用了下列技术方案:
一种具有隧穿钝化的P型晶体硅太阳能电池,包括P型衬底,其特征在于,所述的P型衬底正面由内到外依次设有选择性发射极、超薄隧穿氧化硅层、磷掺杂多晶硅层、正面氧化硅钝化层和正面氮化硅钝化层,所述的P型衬底背面由内到外依次背面氧化铝钝化层和背面氮化硅化层,正面氮化硅钝化层上设有正面金属银栅线,P型衬底背面设有背面金属铝栅线,所述的背面金属铝栅线贯穿背面氧化铝钝化层和背面氮化硅化层,在背面金属铝栅线与P型衬底的连接处具有背面局部背场。
进一步的,超薄隧穿氧化硅层厚度为0.5nm-5nm,磷掺杂多晶硅层、正面氧化硅钝化层和正面氮化硅钝化层的厚度和为30nm-300nm,背面氧化铝钝化层和背面氮化硅化层的厚度和为10nm-300nm。
一种具有隧穿钝化的P型晶体硅太阳能电池的制备方法,包括以下步骤:
1)硅片经过制绒后,在其正面进行磷扩散,
2)对正面进行激光PSG重掺杂,形成选择性发射极层,
3)去除PSG后,硅片正面依次制备超薄隧穿氧化硅层和非晶硅层,
4)对硅片进行高温处理,非晶硅转化为掺杂多晶硅,
5)去除背面磷硅玻璃层,
6)背面进行抛光或制绒处理,
7)正面生长正面氧化硅钝化层和正面氮化硅钝化层,
8)背面沉积钝化膜,
9)背面激光开孔,
10)印刷正面和背面浆料,
11)烧结。
进一步的,在步骤1中,磷扩散运用低压或常压扩散,方阻在100ohm/sq-300ohm/sq之间。
进一步的,在步骤2中,激光PSG重掺杂后方阻与原来方阻差值在30ohm/sq-150ohm/sq之间。
进一步的,在步骤3中,非晶硅层为原位掺磷的非晶硅薄膜或本征非晶硅薄膜。
进一步的,当非晶硅层为本征非晶硅薄膜时,后续从外部引入掺杂源,当非晶硅层为原位掺杂的非晶硅薄膜时,后续高温退火,以激活掺杂原子,退火温度为800-1050度,时间1-300min,高温处理后,非晶硅薄膜转化为多晶硅薄膜,多晶硅薄膜的厚度在2nm-20nm之间;
超薄隧穿氧化硅层为高温热氧化生长、为湿法或者强氧化气体氧化法,超薄隧穿氧化硅层厚度为0.5nm-5nm。
进一步的,在步骤7)中,生长方式为ALD或PECVD,磷掺杂多晶硅层、正面氧化硅钝化层和正面氮化硅钝化层的厚度和为30nm-300nm。
进一步的,在步骤8)中,沉积的背面钝化膜为叠层SiNx薄膜、SiNx/SiOx叠层、SiNx/AlOx叠层、SiNx/SiNO叠层或为四种薄膜组合,钝化膜整体厚度为10nm-300nm。
进一步的,在步骤9)中,背面激光图形是连续的线条或间断式的线条,
在步骤10)中,正面浆料和背面浆料的类型为烧穿型或非烧穿型,当浆料为非烧穿型时,则用激光、刻蚀浆料或者阻挡线浆料方式将相应钝化膜打开,烧结后形成接触。
与现有的技术相比,本发明的优点在于:
通过在电池结构正面采用由隧穿氧化硅层与掺杂磷的多晶硅层组成的TopCon结构钝化技术,在原有单纯的氮化硅表面钝化的基础上,增加了钝化隧穿层。由于该结构非常薄,在解决硅片光吸收的同时,有效地降低了电池的表面复合速率,提高电池的正面钝化,提升电池性能。
本发明的其它优点、目标和特征将部分通过下面的说明体现,部分还将通过对本发明的研究和实践而为本领域的技术人员所理解。
附图说明
图1为本发明太阳能电池的结构示意图。
图中:P型衬底1、选择性发射极2、超薄隧穿氧化硅层3、磷掺杂多晶硅层4、正面氧化硅钝化层5、正面氮化硅钝化层6、背面氧化铝钝化层7、背面氮化硅化层8、正面金属银栅线9、背面金属铝栅线10、背面局部背场11。
具体实施方式
为了使本技术领域的人员更好的理解本发明方案,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整的描述。
实施例1
如图1所示,本实施例提供了一种具有隧穿钝化的P型晶体硅太阳能电池,包括P型衬底1,其特征在于,所述的P型衬底1正面由内到外依次设有选择性发射极2、超薄隧穿氧化硅层3、磷掺杂多晶硅层4、正面氧化硅钝化层5和正面氮化硅钝化层6,所述的P型衬底1背面由内到外依次背面氧化铝钝化层7和背面氮化硅化层8,正面氮化硅钝化层6上设有正面金属银栅线9,P型衬底1背面设有背面金属铝栅线10,所述的背面金属铝栅线10贯穿背面氧化铝钝化层7和背面氮化硅化层8,在背面金属铝栅线10与P型衬底1的连接处具有背面局部背场11。
超薄隧穿氧化硅层3厚度为0.5nm-5nm,磷掺杂多晶硅层4、正面氧化硅钝化层5和正面氮化硅钝化层6的厚度和为30nm-300nm,背面氧化铝钝化层7和背面氮化硅化层8的厚度和为10nm-300nm。
通过在电池结构正面采用由超薄隧穿氧化硅层和磷掺杂多晶硅层组成的TopCon结构钝化技术,在原有单纯的氮化硅表面钝化的基础上,增加了钝化隧穿层,由于该结构非常薄,在解决硅片光吸收的同时,有效地降低了电池的表面复合速率,提高电池的正面钝化,提升电池性能。
实施例2
如图1所示,一种具有隧穿钝化的P型晶体硅太阳能电池的制备方法,包括以下步骤:
1)硅片经过制绒后,在其正面进行磷扩散,磷扩散运用低压或常压扩散,方阻在100ohm/sq-300ohm/sq之间,
2)对正面进行激光PSG重掺杂,形成选择性发射极层,激光PSG重掺杂后方阻与原来方阻差值在30ohm/sq-150ohm/sq之间,
3)去除PSG后,硅片正面依次制备超薄隧穿氧化硅层3和非晶硅层,非晶硅层为原位掺磷的非晶硅薄膜或本征非晶硅薄膜。当非晶硅层为本征非晶硅薄膜时,后续从外部引入掺杂源,当非晶硅层为原位掺杂的非晶硅薄膜时,后续高温退火,以激活掺杂原子,退火温度为800-1050度,时间1-300min,高温处理后,非晶硅薄膜转化为多晶硅薄膜,多晶硅薄膜的厚度在2nm-20nm之间;超薄隧穿氧化硅层3为高温热氧化生长、为湿法或者强氧化气体氧化法,超薄隧穿氧化硅层3厚度为0.5nm-5nm,
4)对硅片进行高温处理,在不低于830摄氏度的条件下完成退火晶化过程,非晶硅转化为掺杂多晶硅,
5)去除背面磷硅玻璃层,具体的说,对硅片的背面进行单面HF清洗,去除背面的磷硅玻璃层,
6)背面进行抛光形成抛光面或制绒处理,
7)正面生长正面氧化硅钝化层5和正面氮化硅钝化层6,
在步骤7)中,生长的钝化膜及减反射薄膜可以为多层SiNx薄膜,也可以先生长热SiO2薄膜,然后在沉积多层SiNx薄膜,形成多层钝化减反膜。可以为SiOx薄膜,可以为AlOx薄膜,或者三种薄膜的任意组合薄膜。生长方式为ALD或PECVD,磷掺杂多晶硅层4、正面氧化硅钝化层5和正面氮化硅钝化层6的厚度和为30nm-300nm。本实施例中,背面由内到外依次背面氧化铝钝化层7和背面氮化硅化层8,
8)背面沉积钝化膜,沉积的背面钝化膜为叠层SiNx薄膜、SiNx/SiOx叠层、SiNx/AlOx叠层或为三种薄膜组合,钝化膜整体厚度为10nm-300nm,
9)背面激光开孔,背面激光图形是连续的线条或间断式的线条,
10)印刷正面和背面浆料,正面浆料和背面浆料的类型为烧穿型或非烧穿型,当浆料为非烧穿型时,则用激光、刻蚀浆料或者阻挡线浆料方式将相应钝化膜打开,烧结后形成接触,
11)烧结。
通过在电池结构正面采用由超薄隧穿氧化硅层和磷掺杂多晶硅层组成的TopCon结构钝化技术,在原有单纯的氮化硅表面钝化的基础上,增加了钝化隧穿层,由于该结构非常薄,在解决硅片光吸收的同时,有效地降低了电池的表面复合速率,提高电池的正面钝化,提升电池性能。
实施例3
一种有隧穿钝化的P型晶体硅太阳能电池的制备方法,具体如下:
将P型单晶硅作为衬底,在有KOH和制绒添加剂溶液中进行常规的制绒。经过氢氟酸和RCA清洗后,硅片正面进行磷扩散,方阻约为150ohm/sq。硅片正面进行常规激光PSG重掺杂,方阻为65-75ohm/sq。由于非晶硅厚度很薄,丝网烧结时浆料很容易烧穿,所以发射极是与激光PSG重掺杂接触,即正面实际为选择性发射极,金属化后具有更好的开压和接触。经过氢氟酸和RCA清洗后,在硅衬底的正面和背面同时或只有正面制备一层厚度为1nm-3nm的超薄隧穿氧化硅,再采用LPCVD设备在硅衬底的正面和背面同时或只有正面沉积一层厚度为5nm-10nm的磷掺杂的非晶硅层。在不低于830摄氏度的条件下完成退火晶化过程。对硅片的背面进行单面HF清洗,去除背面的磷硅玻璃层。接着对背面进行抛光处理,去除背面的扩散层并形成抛光面。然后在正面依次制备氧化硅、氮化硅钝化膜,在背面依次制备氧化铝、氮化硅钝化膜。正面叠加一层氧化层,即通过600-850度的氧化,可以对激光PSG重掺杂进行损伤修复,从而提高开压和电流。最后用激光烧蚀打开背面的氧化铝和氮化硅钝化层,进行常规的丝网印刷和烧结,即正面银浆背面铝浆,以便形成电学接触。
本文中所描述的具体实施例仅仅是对本发明精神作举例说明。本发明所属技术领域的技术人员可以对所描述的具体实施例做各种各样的修改或补充或采用类似的方式替代,但并不会偏离本发明的精神。
Claims (10)
1.一种具有隧穿钝化的P型晶体硅太阳能电池,包括P型衬底(1),其特征在于,所述的P型衬底(1)正面由内到外依次设有选择性发射极(2)、超薄隧穿氧化硅层(3)、磷掺杂多晶硅层(4)、正面氧化硅钝化层(5)和正面氮化硅钝化层(6),所述的P型衬底(1)背面由内到外依次背面氧化铝钝化层(7)和背面氮化硅化层(8),正面氮化硅钝化层(6)上设有正面金属银栅线(9),P型衬底(1)背面设有背面金属铝栅线(10),所述的背面金属铝栅线(10)贯穿背面氧化铝钝化层(7)和背面氮化硅化层(8)。
2.根据权利要求1所述的具有隧穿钝化的P型晶体硅太阳能电池,其特征在于,超薄隧穿氧化硅层(3)厚度为0.5nm-5nm,磷掺杂多晶硅层(4)、正面氧化硅钝化层(5)和正面氮化硅钝化层(6)的厚度和为30nm-300nm,背面氧化铝钝化层(7)和背面氮化硅化层(8)的厚度和为10nm-300nm。
3.一种具有隧穿钝化的P型晶体硅太阳能电池的制备方法,其特征在于,包括以下步骤:
1)硅片经过制绒后,在其正面进行磷扩散,
2)对正面进行激光PSG重掺杂,形成选择性发射极层,
3)去除PSG后,硅片正面依次制备超薄隧穿氧化硅层(3)和非晶硅层,
4)对硅片进行高温处理,非晶硅转化为磷掺杂多晶硅层(4),
5)去除背面磷硅玻璃层,
6)背面进行抛光或制绒处理,
7)正面生长正面氧化硅钝化层(5)和正面氮化硅钝化层(6),
8)背面沉积钝化膜,
9)背面激光开孔,
10)印刷正面和背面浆料,
11)烧结。
4.根据权利要求3所述的具有隧穿钝化的P型晶体硅太阳能电池的制备方法,其特征在于,在步骤1)中,磷扩散运用低压或常压扩散,方阻在100ohm/sq-300ohm/sq之间。
5.根据权利要求3所述的具有隧穿钝化的P型晶体硅太阳能电池的制备方法,其特征在于,在步骤2)中,激光PSG重掺杂后方阻与原来方阻差值在30ohm/sq-150ohm/sq之间。
6.根据权利要求3所述的具有隧穿钝化的P型晶体硅太阳能电池的制备方法,其特征在于,在步骤3)中,非晶硅层为原位掺磷的非晶硅薄膜或本征非晶硅薄膜。
7.根据权利要求6所述的具有隧穿钝化的P型晶体硅太阳能电池的制备方法,其特征在于,当非晶硅层为本征非晶硅薄膜时,后续从外部引入掺杂源,当非晶硅层为原位掺杂的非晶硅薄膜时,后续高温退火,以激活掺杂原子,退火温度为800-1050度,时间1-300min,高温处理后,非晶硅薄膜转化为多晶硅薄膜,多晶硅薄膜的厚度在2nm-20nm之间;
超薄隧穿氧化硅层(3)为高温热氧化生长、为湿法或者强氧化气体氧化法,超薄隧穿氧化硅层(3)厚度为0.5nm-5nm。
8.根据权利要求3所述的具有隧穿钝化的P型晶体硅太阳能电池的制备方法,其特征在于,在步骤7)中,生长方式为ALD或PECVD,磷掺杂多晶硅层(4)、正面氧化硅钝化层(5)和正面氮化硅钝化层(6)的厚度和为30nm-300nm。
9.根据权利要求3所述的具有隧穿钝化的P型晶体硅太阳能电池的制备方法,其特征在于,在步骤8)中,沉积的背面钝化膜为叠层SiNx薄膜、SiNx/SiOx叠层、SiNx/AlOx叠层、SiNx/SiNO叠层或为四种薄膜组合,钝化膜整体厚度为10nm-300nm。
10.根据权利要求3所述的具有隧穿钝化的P型晶体硅太阳能电池的制备方法,其特征在于,在步骤9)中,背面激光图形是连续的线条或间断式的线条,
在步骤10)中,正面浆料和背面浆料的类型为烧穿型或非烧穿型,当浆料为非烧穿型时,则用激光、刻蚀浆料或者阻挡线浆料方式将相应钝化膜打开,烧结后形成接触。
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