CN116031159A - GaN Schottky diode with low reverse leakage quasi-vertical structure and preparation method thereof - Google Patents
GaN Schottky diode with low reverse leakage quasi-vertical structure and preparation method thereof Download PDFInfo
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Abstract
The invention provides a GaN Schottky diode with a low reverse leakage quasi-vertical structure and a preparation method thereof, and belongs to the technical field of semiconductor materials. According to the GaN SBD with the low reverse leakage quasi-vertical structure, the side wall of the N-GaN layer and the partial area of the etching platform (namely, the partial area of the surface of N+ GaN) are subjected to ion implantation after etching, so that GaN in the implanted area is changed into an insulator, electrons are prevented from flowing from the side wall to an ohmic electrode (namely, surface leakage), reverse leakage current is reduced, and reverse withstand voltage of a device is improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a GaN Schottky diode with a low reverse leakage quasi-vertical structure and a preparation method thereof.
Background
Wide band gap semiconductor materials are research hot spots in more than ten years recently, wherein GaN materials are receiving more and more attention due to the characteristics of large band gap, high breakdown field strength, high thermal conductivity, strong corrosion resistance and the like. The Schottky diode (SBD) manufactured by the GaN material has the characteristics of high current, low forward turn-on voltage, high reverse withstand voltage, low recovery time and the like, and becomes a hot spot for research. The use of GaN offers many benefits to the customer, for example, it can reduce the switching losses of the diode, since there is no voltage overshoot during the off phase, no active energy absorbing components are needed, and energy efficiency and temperature performance are improved. The design of the user circuit can be optimized in multiple aspects, and the requirement for a radiator can be reduced by improving the energy efficiency; by increasing the working frequency, smaller passive components can be used, so that the requirement of noise reduction is met; the high-frequency oscillation phenomenon is avoided during switching, and the requirement of the FIR filter can be reduced.
The GaN SBD with the quasi-vertical structure has low cost and small on-resistance, but has small reverse withstand voltage, and how to increase the withstand voltage of the quasi-vertical device is a research subject in the industry. The GaN SBD of the quasi-vertical structure requires etching of the N-GaN layer (lightly doped N-type GaN layer) to expose the n+ GaN layer (heavily doped N-type GaN layer) to fabricate an ohmic electrode. After etching N-GaN, the side wall of the N-GaN is damaged by etching, part of conductive ions remain on the side wall, and even if the passivation layer is covered on the side wall later, the conductive ions cannot be completely removed, so that when reverse voltage is applied to the device (namely, high voltage is applied to the ohmic electrode), part of electrons can flow to the ohmic electrode from the side wall of the N-GaN, thereby forming reverse leakage current, and reducing reverse withstand voltage of the device.
Disclosure of Invention
The invention aims to provide a GaN Schottky diode with a low reverse leakage quasi-vertical structure and a preparation method thereof.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides a preparation method of a GaN Schottky diode with a low reverse leakage quasi-vertical structure, which comprises the following steps:
sequentially epitaxially growing an N+ GaN layer and an N-GaN layer on the substrate;
manufacturing a Schottky electrode on the surface of the N-GaN layer;
etching the periphery of the N-GaN layer of the uncovered area of the Schottky electrode until the N+ GaN layer below is exposed, so as to form an etching platform;
carrying out ion implantation on the side wall of the residual N-GaN layer and a partial area of the etching platform to change GaN implanted with ions into an insulator, so as to form an insulating area; the region of the etching platform for ion implantation is connected with the side wall of the residual N-GaN layer;
covering passivation layers on the surfaces of the insulating region and the N-GaN layer except the Schottky electrode;
and preparing an ohmic electrode in an area outside the passivation layer on the surface of the etching platform, and connecting the ohmic electrode with the passivation layer to obtain the GaN Schottky diode with the low reverse leakage quasi-vertical structure.
Preferably, the reaction gas for ion implantation is nitrogen or argon.
Preferably, the ion implantation conditions include: the implantation energy is 100-200 keV, the ion beam current is 10-20 muA, and the implantation dosage is 1-2X 10 13 /cm 2 。
Preferably, the passivation layer is SiO 2 A layer or SiN layer.
Preferably, the electrode material used for the schottky electrode comprises Ni/Au, ni/Ag or Ni/Pt.
Preferably, the electrode material used for the ohmic electrode comprises Al, ti or Al/TiN.
Preferably, the doping concentration of the N+ GaN layer is 1×10 19 /cm 3 The above.
Preferably, the doping concentration of the N-GaN layer is less than 1×10 18 /cm 3 。
The invention provides the GaN Schottky diode with the low reverse leakage quasi-vertical structure, which is prepared by the preparation method.
The invention provides a preparation method of a GaN Schottky diode with a low reverse leakage quasi-vertical structure, which comprises the following steps: sequentially epitaxially growing an N+ GaN layer and an N-GaN layer on the substrate; manufacturing a Schottky electrode on the surface of the N-GaN layer; etching the periphery of the N-GaN layer of the uncovered area of the Schottky electrode until the N+ GaN layer below is exposed, so as to form an etching platform; carrying out ion implantation on the side wall of the residual N-GaN layer and a partial area of the etching platform to change GaN implanted with ions into an insulator, so as to form an insulating area; the region of the etching platform for ion implantation is connected with the side wall of the residual N-GaN layer; covering passivation layers on the surfaces of the insulating region and the N-GaN layer except the Schottky electrode; and preparing an ohmic electrode in an area outside the passivation layer on the surface of the etching platform, and connecting the ohmic electrode with the passivation layer to obtain the GaN Schottky diode with the low reverse leakage quasi-vertical structure.
According to the GaN SBD with the low reverse leakage quasi-vertical structure, the side wall of the N-GaN layer and the partial area of the etching platform (namely, the partial area of the surface of N+ GaN) are subjected to ion implantation after etching, so that GaN in the implanted area is changed into an insulator, electrons are prevented from flowing from the side wall to an ohmic electrode (namely, surface leakage), reverse leakage current is reduced, and reverse withstand voltage of a device is improved.
Drawings
FIG. 1 is a schematic diagram after sequentially epitaxially growing an N+ GaN layer and an N-GaN layer on a substrate;
fig. 2 is a schematic diagram of the surface of the N-GaN layer after schottky electrode fabrication;
FIG. 3 is a schematic diagram of an etch platform formed after etching;
FIG. 4 is a schematic illustration of forming an insulating region after ion implantation;
FIG. 5 is a schematic diagram after covering the passivation layer;
FIG. 6 is a schematic diagram of a GaN Schottky diode with a low reverse drain quasi-vertical structure according to the present invention;
in fig. 1 to 6: 1-substrate, 2-N+ GaN layer, 3-N-GaN layer, 4-Schottky electrode, 5-etching platform, 6-insulating region, 7-passivation layer, 8-Schottky electrode.
Detailed Description
The invention provides a preparation method of a GaN Schottky diode with a low reverse leakage quasi-vertical structure, which comprises the following steps:
sequentially epitaxially growing an N+ GaN layer and an N-GaN layer on the substrate;
manufacturing a Schottky electrode on the surface of the N-GaN layer;
etching the periphery of the N-GaN layer of the uncovered area of the Schottky electrode until the N+ GaN layer below is exposed, so as to form an etching platform;
carrying out ion implantation on the side wall of the residual N-GaN layer and a partial area of the etching platform to change GaN implanted with ions into an insulator, so as to form an insulating area; the region of the etching platform for ion implantation is connected with the side wall of the residual N-GaN layer;
covering passivation layers on the surfaces of the insulating region and the N-GaN layer except the Schottky electrode;
and preparing an ohmic electrode in an area outside the passivation layer on the surface of the etching platform, and connecting the ohmic electrode with the passivation layer to obtain the GaN Schottky diode with the low reverse leakage quasi-vertical structure.
As shown in fig. 1, the present invention epitaxially grows an n+ GaN layer and an N-GaN layer in sequence on a substrate.
In the present invention, the substrate is preferably a sapphire substrate. In the present invention, the doping concentration of the n+ GaN layer is preferably 1×10 19 /cm 3 The above; the doping concentration of the N-GaN layer is preferably less than 1×10 18 /cm 3 . The growth conditions and thicknesses of the N+ GaN layer and the N-GaN layer are not particularly required, and the growth conditions and thicknesses well known in the art are adopted. In an embodiment of the present invention, the doping concentration of the n+ GaN layer is 1×10 19 /cm 3 Thickness is 3 μm; the doping concentration of the N-GaN layer is 1 multiplied by 10 16 /cm 3 The thickness was 6. Mu.m.
After forming the N-GaN layer, the invention manufactures a Schottky electrode on the surface of the N-GaN layer, as shown in figure 2.
In the present invention, the electrode material used for the schottky electrode preferably includes Ni/Au, ni/Ag or Ni/Pt. The preparation process of the Schottky electrode is not particularly required, and the preparation process well known in the art is adopted.
After the schottky electrode is manufactured, as shown in fig. 3, the periphery of the N-GaN layer in the uncovered area of the schottky electrode is etched until the n+ GaN layer below is exposed, so as to form an etching platform.
The invention has no special requirement on the etching method and the etched area size, and the etching is carried out according to the conventional etched area size by adopting the etching method well known in the field.
In the etching process, the side wall of the N-GaN is damaged by etching, so that conductive ions are generated on the side wall. These conductive ions, when a reverse voltage is applied (high voltage is applied to the ohmic electrode), form a reverse leakage current.
After etching is completed, as shown in fig. 4, the invention performs ion implantation on the side wall of the remaining N-GaN layer and a partial region of the etching platform, so that the GaN implanted with ions becomes an insulator, and an insulating region is formed; and the region of the etching platform, in which the ion implantation is performed, is connected with the side wall of the residual N-GaN layer.
In the present invention, the ion-implanted reaction gas is preferably nitrogen or argon. The ion implantation conditions preferably include: the implantation energy is 100-200 keV, the ion beam current is 10-20 muA, and the implantation dosage is 1-2X 10 13 /cm 2 。
In the present invention, when the ion-implanted reaction gas is nitrogen, the implantation energy is preferably 200keV, the ion beam current is preferably 20. Mu.A, and the implantation dose is preferably 2X 10 13 /cm 2 . When the ion-implanted reaction gas is argon, the implantation energy is preferably 150keV, the ion beam current is preferably 15. Mu.A, and the implantation dose is preferably 1X 10 13 /cm 2 。
After ion implantation, N ions or Ar ions can enter the N-GaN side wall and N+ GaN to destroy the crystal structure of GaN, so that the GaN becomes an insulating layer and conductive ions disappear. It should be noted that implantation is performed in a partial region of the N + GaN surface (also immediately etching a partial region of the mesa), which is the portion of the ohmic electrode to the N-GaN sidewall. After injection, the leakage current of electrons from the N-GaN side wall to the ohmic electrode is blocked, namely, the surface leakage current is blocked, and is a part of the reverse leakage current of the GaN SBD, so that the reverse leakage current of the GaN SBD is reduced.
After forming the insulating region, as shown in fig. 5, the present invention covers the passivation layer on the surface of the insulating region and the surface of the N-GaN layer except the schottky electrode.
In the present invention, the passivation layer is preferably SiO 2 A layer or SiN layer. The invention has no special requirement on the coverage mode of the passivation layer, and the coverage mode well known in the field can be adopted. The thickness of the passivation layer is not particularly required in the present invention, and may be any thickness known in the art. In an embodiment of the invention, the passivation layer has a thickness of 500 μm. In the present invention, the passivation layer serves to protect the GaN surface and sidewalls.
After forming the passivation layer, as shown in fig. 6, the invention prepares an ohmic electrode in a region outside the passivation layer on the surface of the etching platform, and connects the ohmic electrode with the passivation layer to obtain the GaN schottky diode with low reverse leakage quasi-vertical structure.
In the present invention, the electrode material used for the ohmic electrode preferably includes Al, ti or Al/TiN. The invention has no special requirement on the preparation process of the ohmic electrode, and the preparation process well known in the field can be adopted.
The invention provides the GaN Schottky diode with the low reverse leakage quasi-vertical structure, which is prepared by the preparation method.
According to the GaN SBD with the low reverse leakage quasi-vertical structure, the side wall of the N-GaN layer and the partial area of the etching platform (namely, the partial area of the surface of N+ GaN) are subjected to ion implantation after etching, so that GaN in the implanted area is changed into an insulator, electrons are prevented from flowing from the side wall to an ohmic electrode (namely, surface leakage), reverse leakage current is reduced, and reverse withstand voltage of a device is improved.
The low reverse leakage quasi-vertical GaN schottky diode and the method for manufacturing the same according to the present invention will be described in detail with reference to examples, but they should not be construed as limiting the scope of the present invention.
Example 1
Sequentially epitaxially growing an N+ GaN layer and a GaN layer on the surface of the sapphire substrateAn N-GaN layer; the doping concentration of the N+ GaN layer is 1 multiplied by 10 19 /cm 3 Thickness is 3 μm; the doping concentration of the N-GaN layer is 1 multiplied by 10 16 /cm 3 Thickness is 6 μm;
manufacturing a Schottky electrode on the surface of the N-GaN layer, wherein the adopted electrode material is Ni/Pt;
etching the periphery of the N-GaN layer of the uncovered area of the Schottky electrode until the N+ GaN layer below is exposed, so as to form an etching platform;
ion implantation is carried out on the side wall of the residual N-GaN layer and the partial area of the etching platform, the area of the etching platform for ion implantation is connected with the side wall of the residual N-GaN layer, the implanted reaction gas is nitrogen, the implantation condition is that the implantation energy is 200keV, the ion beam current is 20 mu A, and the implantation dosage is 2 multiplied by 10 13 /cm 2 Forming an insulating region by changing GaN into insulator;
covering SiN passivation layers on the surfaces of the insulating region and the N-GaN layer except the Schottky electrode, wherein the thickness of the SiN passivation layers is 500 mu m;
and preparing an ohmic electrode in an area outside the passivation layer on the surface of the etching platform, so that the ohmic electrode is connected with the passivation layer, and the electrode material adopted by the ohmic electrode is Ti/Al, so as to obtain the GaN Schottky diode with the low reverse leakage quasi-vertical structure.
Example 2
The difference from example 1 is that the reaction gas for ion implantation was argon, the conditions for ion implantation were an implantation energy of 150keV, an ion beam current of 15. Mu.A, and an implantation dose of 1X 10 13 /cm 2 The method comprises the steps of carrying out a first treatment on the surface of the The GaN Schottky diode with the low reverse leakage quasi-vertical structure is obtained.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (9)
1. The preparation method of the GaN Schottky diode with the low reverse leakage quasi-vertical structure is characterized by comprising the following steps of:
sequentially epitaxially growing an N+ GaN layer and an N-GaN layer on the substrate;
manufacturing a Schottky electrode on the surface of the N-GaN layer;
etching the periphery of the N-GaN layer of the uncovered area of the Schottky electrode until the N+ GaN layer below is exposed, so as to form an etching platform;
carrying out ion implantation on the side wall of the residual N-GaN layer and a partial area of the etching platform to change GaN implanted with ions into an insulator, so as to form an insulating area; the region of the etching platform for ion implantation is connected with the side wall of the residual N-GaN layer;
covering passivation layers on the surfaces of the insulating region and the N-GaN layer except the Schottky electrode;
and preparing an ohmic electrode in an area outside the passivation layer on the surface of the etching platform, and connecting the ohmic electrode with the passivation layer to obtain the GaN Schottky diode with the low reverse leakage quasi-vertical structure.
2. The method according to claim 1, wherein the ion-implanted reaction gas is nitrogen or argon.
3. The method of claim 2, wherein the ion implantation conditions include: the implantation energy is 100-200 keV, the ion beam current is 10-20 muA, and the implantation dosage is 1-2X 10 13 /cm 2 。
4. The method of claim 1, wherein the passivation layer is SiO 2 A layer or SiN layer.
5. The method of claim 1, wherein the electrode material used for the schottky electrode comprises Ni/Au, ni/Ag or Ni/Pt.
6. The method of claim 1, wherein the ohmic electrode comprises an electrode material comprising Al, ti or Al/TiN.
7. The method according to claim 1, wherein the doping concentration of the n+ GaN layer is 1 x 10 19 /cm 3 The above.
8. The method of claim 1, wherein the N-GaN layer has a doping concentration of less than 1 x 10 18 /cm 3 。
9. The GaN schottky diode with low reverse leakage quasi-vertical structure prepared by the preparation method of any one of claims 1 to 8.
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