CN115988763A - Manufacturing method of Ku-band BUC up-conversion module and up-conversion module - Google Patents

Manufacturing method of Ku-band BUC up-conversion module and up-conversion module Download PDF

Info

Publication number
CN115988763A
CN115988763A CN202211723416.7A CN202211723416A CN115988763A CN 115988763 A CN115988763 A CN 115988763A CN 202211723416 A CN202211723416 A CN 202211723416A CN 115988763 A CN115988763 A CN 115988763A
Authority
CN
China
Prior art keywords
chip
cavity
circuit board
placing
sintering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202211723416.7A
Other languages
Chinese (zh)
Inventor
奚凤鸣
刘煜文
聂庆燕
汪宁
蔡庆刚
李明
姜东�
王凯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Anhui East China Institute of Optoelectronic Technology
Original Assignee
Anhui East China Institute of Optoelectronic Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anhui East China Institute of Optoelectronic Technology filed Critical Anhui East China Institute of Optoelectronic Technology
Priority to CN202211723416.7A priority Critical patent/CN115988763A/en
Publication of CN115988763A publication Critical patent/CN115988763A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

The invention discloses a manufacturing method of a Ku waveband BUC up-conversion module, which comprises the following steps: s1, sintering a microwave circuit board to a cavity; s2, sintering the components on the microwave circuit board; s3, sintering the components on the local oscillator and feed circuit board; s4, eutectic-crystallizing the bare chip on the molybdenum-copper carrier; s5, gluing the chip assembly to the cavity; s6, gold wire bonding is carried out on the corresponding position; and S7, debugging, testing, capping and marking to finish manufacturing. The invention has the advantages that: the medium BUC up-conversion module manufactured by the scheme has the advantages of simple manufacturing process, high stability, high sensitivity, high power and the like. The process for producing the BUC up-conversion module skillfully utilizes hot air gun equipment to solve the process problem of sintering the front surface and the back surface of the same temperature gradient, and the process is scientific, simple, convenient and reliable and is suitable for batch production.

Description

Manufacturing method of Ku-band BUC up-conversion module and up-conversion module
Technical Field
The invention relates to a processing method of a power amplifier, in particular to processing and manufacturing of a manufacturing process of a Ku frequency band BUC up-conversion module, and belongs to the technical field of microwave module manufacturing and processing processes.
Background
With the rapid development of modern communication, the microwave low frequency band adopted in the past cannot meet the design requirements of a plurality of electronic devices, so the design and development of the high frequency band become necessary trend. The Ku frequency band is a very important role in a high frequency band, and has the advantages of high power, wide frequency band, difficulty in microwave radiation interference and the like, the frequency conversion module is a key component in a receiving and transmitting system, the frequency is changed by mainly utilizing the frequency spectrum shift of a nonlinear device, and the up-conversion module is a KU band satellite for converting an L band signal output by a satellite into a high frequency.
In the transmission process, the stability and the reliability of the product are used as the guarantee of high-frequency output, and in the field of the existing process manufacturing, the poor stability of the product relatively reduces the reliability of the product. For example, a Ku band up-conversion module applied to satellite communication navigation, which is disclosed in patent application No. 201621092024.5, cannot solve the technical problem of manufacturing.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a manufacturing method of a Ku waveband BUC up-conversion module. The process for producing the BUC up-conversion module ingeniously uses hot air gun equipment to solve the process problem of sintering of the front surface and the back surface of the same temperature gradient, and the process is scientific, simple, convenient and reliable and is suitable for batch production.
In order to achieve the purpose, the invention adopts the technical scheme that: a manufacturing method of a Ku-band BUC up-conversion module comprises the following steps: s1, sintering a microwave circuit board to a cavity; s2, sintering the components on the microwave circuit board; s3, sintering the components on the local oscillator and feed circuit board; s4, eutectic-crystallizing the bare chip on a molybdenum-copper carrier; s5, gluing the chip assembly to the cavity; s6, gold wire bonding is carried out on the corresponding position; and S7, debugging, testing, capping and marking to finish manufacturing.
The step S1 comprises the following steps:
s1.1, cleaning a cavity to be sintered;
s1.2, preprocessing a soldering lug, introducing a CAD design drawing of the microwave circuit board into a laser cutting equipment computer in advance, carrying out laser cutting on the soldering lug according to the design drawing of the microwave circuit board, placing the soldering lug in an area to be marked, adjusting marking parameters, and finishing soldering lug preparation to ensure that the surface of the soldering lug is smooth and intact; taking a culture dish, pouring a proper amount of alcohol, carrying out bubble washing on the formed soldering lug for 2-3 minutes, taking out the formed soldering lug, and spreading the formed soldering lug on filter paper for air drying for later use;
s1.3, contrasting a sintering diagram of the microwave circuit board, injecting a proper amount of soldering flux at a position, to be sintered, of the circuit board by using a low-residue needle tube soldering flux, placing the molded soldering lug obtained in the step 1.2 in a cavity by using tweezers, injecting a proper amount of soldering flux on the surface of the soldering lug, standing for 1-2 minutes, and then placing the microwave circuit board in the cavity; selecting soldering paste, opening a dispenser, setting pressure, uniformly dispensing a circle of soldering paste on the outer sides of the radio frequency insulator and the feed-through filter, and mounting the radio frequency insulator and the feed-through filter to corresponding positions in a sintering diagram of the microwave circuit board;
s1.4, opening a heating platform, setting the temperature, placing a pressing block tool in a cavity, fixing a cover plate on the cavity by using a pan head combination screw with the diameter of 1.6 multiplied by 5, placing a cavity placing base tool on the heating platform, measuring the real-time temperature of the cavity by using a thermometer to reach 220 ℃, observing the soldering paste on the outer side of the radio frequency insulator, melting the soldering paste, slightly stirring the fixed insulator, slightly screwing the screw on the cover plate, ensuring uniform force, and then using cotton cloth gloves to take the cavity assembly out of a radiating block for cooling; and taking down the cover plate and the pressing block tool after the cavity assembly is cooled.
The step S2 comprises the following steps:
s2.1, wiping the position of the microwave circuit component to be adhered with the cavity assembly obtained in the step S1 clean by using wet alcohol cotton;
s2.2, preparing a dispenser, presetting the pressure of the dispenser, and dispensing a proper amount of soldering paste at a pad of the circuit board;
s2.3, comparing with a sintering diagram of the microwave circuit board component, wherein the list of the component to be sintered is as follows: t1; sheet resistance: R1-R3, R4, R5, R6, R7, sheet capacitance: c1, C2, C3, C4, C5-17, C18, C19, C20, C21, C22, sheet inductance: l1, L2; gently clamping the components and the parts by using tweezers and correctly placing the components and the parts on the corresponding bonding pads;
s2.4, setting the temperature of the heating platform to 215-225 ℃, placing the cavity assembly with the components on the surface on a base tool and placing the cavity assembly on the heating platform together for sintering, observing under a microscope, adjusting the components, and slightly correcting and fixing the components which are displaced and tilted by using tweezers; after sintering, taking down the sintered cavity assembly and the base tool, placing the cavity assembly and the base tool on the heat dissipation block, and naturally cooling;
s2.5, adjusting the pressure of a dispenser to 45-60 psi, uniformly dispensing a circle of soldering paste on the outer side of the DC insulator, wherein the module comprises 18 DC insulators, and inserting short pins of the DC insulator with the soldering paste spot-welded upwards and long pins downwards on a foam board for later use;
S2.6DC insulator is assembled and sintered by inserting from the back to the front, the temperature of a heating platform is adjusted to 130-150 ℃, a hot air gun is opened, the temperature is set to 450-480 ℃, and the air speed is 80-100; placing the cavity assembly obtained in the step 2.4 with the back face upward on a heating table for preheating for 10-15 minutes, measuring the actual temperature to 120-130 ℃ by a thermometer, placing a DC insulator at a corresponding position in the cavity assembly, heating the insulator by using an air opening of a hot air gun, melting the soldering paste, enabling the soldering paste to have fluidity, slightly poking a fixed insulator by using tweezers to enable the soldering paste to fully permeate, sequentially sintering a plurality of insulators one by one in the mode, taking cotton gloves after sintering, taking down the cavity assembly, placing the cavity assembly on a heat dissipation block for cooling, measuring whether the insulator is short-circuited by using a universal meter after the room temperature is cooled, and transferring to the next process if the insulator is not short-circuited;
s2.7, cleaning the cavity assembly by using a vapor phase cleaning machine, setting the temperature of the vapor phase cleaning machine at 60-70 ℃, cleaning for 15-20 minutes, after cleaning, checking the surface of the circuit board under a microscope to be clean, and then storing the circuit board in an anti-static box for later use.
The step S3 comprises the following steps:
s3.1, setting the pressure of a dispenser to be 40-60 psi, and dispensing a proper amount of soldering paste with the melting point of 183 ℃ and the ingredient of SN63CR32 at a pad of the circuit board;
s3.2, comparing the sintering diagram of the local oscillator circuit component, wherein the list of the components to be sintered is as follows, the voltage-controlled oscillator: u1; a single chip microcomputer: u2, voltage stabilization block: u3, sheet resistance: r1, R2, R20, R21, R5-R8, R18, R19, R22, R23, R24, R25; chip capacitance: C1-C5, C8-C13, C7, C14-C15, C30-C32, C18, C21, C22, C19, C24, C25, C26, C35, C80, C31, sheet inductance: l1; gently clamping the components and the parts by using tweezers and correctly placing the components and the parts on the corresponding bonding pads;
s3.3, comparing the sintering diagram of the feeder circuit component, wherein the list of the component to be sintered is as follows: u1; voltage stabilization block: u2, sheet resistance: r1, R2, R3, R4, R5-R10, R11-R20, R21-R23; chip capacitance: c2, C4, C5; flat capacitance: c1 and C3. Gently clamping the components and the parts by using tweezers and correctly placing the components and the parts on the corresponding bonding pads;
s3.4, setting the temperature of the heating platform to be 205-215 ℃, sequentially placing the local oscillator circuit board and the feed circuit board on which the components are stuck on the heating platform for sintering, observing under a microscope, and slightly correcting and fixing the components by using tweezers if the components shift and tilt; after sintering, taking down the sintered circuit board, placing the circuit board on filter paper, and naturally cooling;
s3.5, cleaning the local oscillation circuit assembly and the feed circuit assembly of the sintered component by using a vapor phase cleaning machine, wherein the temperature of the vapor phase cleaning machine is set to be 60-70 ℃, the cleaning time is 15-20 minutes, after the cleaning is finished, the surface of the circuit board is checked to be clean under a microscope, and the component is stored in an anti-static box for later use after the surface of the component is accurately pasted and has no problem.
S3.6, the local oscillation circuit assembly and the feed circuit assembly obtained in the step 3.5 are mounted in the cavity assembly obtained in the step 2.5 by using three combination screws with the M1.6 multiplied by 5 pan heads, the rectangular connector and the cavity filter are sequentially mounted in the cavity assembly by using matched combination screws, then an electric soldering iron is prepared, the temperature is set to be 300-330 ℃, the melting point is 183 ℃, the component is SN63CR32 soldering tin wire, and the insulator, the cavity filter, the rectangular connector and the corresponding micro strip are connected and welded; after the electric welding is finished, the welding points are wiped clean by using wet alcohol cotton, and then the cavity assembly is placed in the anti-static box for later use.
Step S4 comprises the following steps:
s4.1, comparing the eutectic images of the chips, taking out the corresponding bare chips and the corresponding carriers under a microscope for matching, and requiring that: confirming that the direction and the position of the chip, the position of the chip capacitor and the size of the carrier are proper; after matching is completed, eutectic is conducted on the bare chip and the chip capacitor to the corresponding carrier, and a list of eutectic chips, chip capacitors and carriers is waited: a low noise amplifier: u9, corresponding to molybdenum copper support: (2.5X 2.3X 0.2) mm; numerical control attenuator: u8, corresponding to molybdenum copper support: (2.5X 2.2X 0.2) mm; an attenuation chip: U15-U17, low noise Amplifier: U12-U14, chip capacitance: C25-C30, corresponding to molybdenum-copper support: (2.6X 2.5X 0.2) mm; a mixer: u11, corresponding to molybdenum copper support: (2.9X 1.94X 0.2) mm; an equalizer: u10, corresponding to molybdenum copper support: (0.95X 2X 0.2) mm;
s4.2, opening the eutectic platform, setting the temperature to be 310-320 ℃, and comparing a chip eutectic diagram with a fifth chip eutectic diagram when the temperature rises to the set temperature, wherein the eutectic mode of the U8-U11 chips is as follows: clamping a corresponding carrier and placing the corresponding carrier in the central area of an eutectic heating table, fixing the carrier by using tweezers, uniformly spreading a gold-tin soldering lug with the melting point of 280 ℃ and the composition of 80Au20Sn on the surface of the carrier, slightly scraping an oxide layer on the surface of the soldering lug by using the tweezers when the soldering lug is melted, placing a corresponding bare chip on the carrier, clamping the edge of the chip by using the tweezers, slightly rubbing and fixing the chip, and clamping the chip after eutectic is finished and placing the chip in an anti-static box for storage; U12-U17 is eutectic and puts a plurality of chips and chip electric capacity in a carrier, and the chip eutectic mode is: clamping a corresponding carrier, placing the carrier in the central area of an eutectic heating table, fixing the carrier by using tweezers, uniformly spreading gold-tin soldering lugs on the surface of the carrier, clamping a bare chip to slightly rub a fixed position, clamping the chip to be fixed by capacitance friction, completing the whole eutectic process within 30 seconds, and clamping the bare chip to be placed in an antistatic box for later use after completion.
Step S5 comprises the following steps: s5.1, opening a dispenser to adopt a continuous dispensing mode, and setting the pressure of the dispenser to be 45-65psi; sequentially adhering the chip assembly obtained in the last step 4.2 into the cavity assembly from the step 3.6 by using conductive adhesive with the components of 1Oz/8Oz and adhering the chip capacitor to the corresponding microstrip line in the cavity assembly by contrasting with the chip adhesion diagram; uniformly coating a cross-shaped conductive adhesive in the hole at the corresponding position according to the size of the chip carrier, uniformly spreading the conductive adhesive by using a needle head, and then adhering the chip component into the hole at the corresponding position;
5.2 after the surface of the chip assembly is pasted, the chip assembly is self-checked under a microscope, the direction is accurate, the surface of the chip is not scratched or pasted in a leakage way, the conductive adhesive does not pollute the area to be bonded, and the like;
5.3, opening the oven, setting the temperature at a required temperature point of 120 ℃, and preheating for 10-20 minutes; putting the assembly subjected to 5.2 self-inspection into a drying oven at 120 ℃ for 1.5h with cotton gloves; after the gluing is finished, the assembly is taken out from the oven with the cotton gloves and naturally cooled to room temperature for standby.
Step S6 comprises: s6.1, opening a 747677E type three-purpose bonding machine, bonding by adopting a pressure welding mode, setting the temperature of a heating table of the bonding machine to 90-105 ℃, and preheating for 5-10 minutes;
6.2 fixing the cavity assembly obtained in the fifth step on a heating table, adjusting the height of a working base table to enable the riving knife to be slightly lower than the chip to be bonded when the riving knife descends to the lowest, and then setting a bonding pressure parameter;
6.3 comparing with the gold wire bonding diagram, performing gold wire bonding; during bonding, the first point is welded on the chip assembly, the position of the first point is accurately aligned with the middle position of the bonding pad, the second point is welded on the microstrip line, the microstrip is subjected to halving bonding in double-wire bonding, the radian consistency of the gold wires is ensured, and the bonding distance is short.
Step S7 includes: after gold wire bonding is completed, peripheral circuits and instruments are connected to debug and test the BUC up-conversion module; and after debugging and testing are finished, capping and marking are carried out on the BUC up-conversion module.
The Ku waveband BUC up-conversion module is manufactured by the method.
The invention has the advantages that: the medium BUC up-conversion module manufactured by the scheme has the advantages of simple manufacturing process, high stability, high sensitivity, high power and the like. The process for producing the BUC up-conversion module skillfully utilizes hot air gun equipment to solve the process problem of sintering the front surface and the back surface of the same temperature gradient, and the process is scientific, simple, convenient and reliable and is suitable for batch production. The BUC up-conversion module has the advantages that: high power, wide frequency band and is not easy to be interfered by microwave radiation. The BUC up-conversion module produced by the process completely meets the requirements of the whole machine in all performance indexes through testing, environmental experiments and field debugging of the whole machine. The technological process for producing the BUC up-conversion module is scientific, simple, convenient and reliable, the qualification rate of the produced products is high, and the BUC up-conversion module is suitable for batch production.
Drawings
The contents of the expressions in the various figures of the present specification and the labels in the figures are briefly described as follows:
FIG. 1 is a sintering diagram of a microwave circuit board;
FIG. 2 is a diagram of sintering of components of a microwave circuit board;
FIG. 3 is a diagram of a local oscillator circuit component sintering;
FIG. 4 is a sintering diagram of the components of the feeder circuit;
FIG. 5 is a eutectic diagram of a chip;
FIG. 6 is a diagram of chip bonding;
FIG. 7 is a gold wire bonding diagram;
fig. 8 and 9 are schematic circuit diagrams of the up-conversion module according to the present invention.
Detailed Description
The following description of preferred embodiments of the invention will be made in further detail with reference to the accompanying drawings.
The invention provides a processing and manufacturing process of a Ku frequency band BUC up-conversion module. The manufacturing process mainly comprises the following steps: 1. sintering the microwave circuit board to the cavity; 2. sintering the component on the microwave circuit board; 3. sintering the components on the local oscillator and feed circuit board; 4. eutectic-crystallizing a bare chip on a molybdenum-copper carrier; 5. gluing the chip assembly to the cavity; 6. gold wire bonding at the corresponding position; 7. debugging, testing, capping and marking. The invention selects a circuit schematic diagram as the production basis of the product, and is a circuit structure schematic diagram of a general Ku waveband BUC up-conversion module as shown in the following figures 8 and 9. The circuit of fig. 8 and 9 is illustrated as being produced as follows:
a processing and manufacturing process of a Ku frequency band BUC up-conversion module specifically comprises the following steps:
step 1: sintering the microwave circuit board on the cavity
1.1 cleaning the cavity to be sintered, and cleaning the cavity by using a vapor phase cleaning machine, wherein the temperature of the vapor phase cleaning machine is set to be 60-70 ℃, and the cleaning time is 10-15 minutes. Lightly wiping the gold-plated layer on the back of the circuit board by using alcohol cotton, and airing for later use;
1.2 preprocessing a soldering lug, selecting a soldering lug with a melting point of 217 ℃, sn96.5Cu0.5Ag3.0, leading a CAD design drawing of the microwave circuit board into a laser cutting equipment computer in advance, carrying out laser cutting on the soldering lug according to the design drawing of the microwave circuit board, placing the soldering lug in a region to be marked and engraved, adjusting marking parameters, setting current parameters to be 8-9 amperes, and finishing the preparation of the soldering lug to ensure that the surface of the soldering lug is smooth and intact. Taking a culture dish, pouring a proper amount of alcohol, carrying out soaking washing on the formed soldering lug for 2-3 minutes, taking out the formed soldering lug, and spreading the formed soldering lug on filter paper for air drying for later use;
and 1.3, contrasting the sintering diagram I of the microwave circuit board, injecting a proper amount of soldering flux at the position, to be sintered, of the circuit board by using a low-residue needle tube soldering flux, placing the molded soldering terminal obtained in the step 1.2 in a cavity by using tweezers, injecting a proper amount of soldering flux on the surface of the soldering terminal, standing for 1-2 minutes, and then placing the microwave circuit board in the cavity. Selecting solder paste with the melting point of 183 ℃ and the component of SN63CR32, opening a dispenser, setting the pressure to be 45-60 psi, uniformly dispensing a circle of solder paste on the outer sides of a radio frequency insulator (RF 2516-0.38) and a feed-through filter (4300-003), and mounting the radio frequency insulator (RF 2516-0.38) and the feed-through filter (4300-003) at corresponding positions in the drawing;
1.4 open a heating platform, the temperature is set to 240 ℃ -250 ℃, the briquetting tool is arranged in the cavity, the cover plate is fixed on the cavity by using an M1.6X 5 pan head combined screw, the screw is not required to be screwed too tightly as long as the briquetting tool does not shake and flatten, then the cavity is arranged on the base tool and arranged on the heating platform together, the thermometer is used for measuring the real-time temperature of the cavity to reach 220 ℃, the welding paste at the outer side of the radio frequency insulator is observed, the welding paste is melted, the fixed insulator is slightly shifted, the screw on the cover plate is slightly screwed, the force is uniform, and then the cotton gloves are used for taking the cavity assembly to arrange the radiating block for cooling. And taking down the cover plate and the pressing block tool after the cavity assembly is cooled.
Step 2: sintering the components on the microwave circuit board
2.1 wiping the positions of the components to be attached to the microwave circuit of the cavity assembly obtained in the last step clean by using wet alcohol cotton (the components are attached to the surface of the cavity assembly with residual soldering flux, so that the components are misplaced and lost);
2.2 preparing a dispenser of a dispenser, setting the pressure of the dispenser to be 35-55 psi, and dispensing a proper amount of solder paste with the melting point of 183 ℃ and the components of SN63CR32 at a pad of the circuit board;
2.3 comparison of the two microwave circuit board components sintering diagram, the list of the components to be sintered is, TVS tube: t1; sheet resistance: R1-R3, R4, R5, R6, R7, sheet capacitance: c1, C2, C3, C4, C5-17, C18, C19, C20, C21, C22, sheet inductance: l1 and L2. Gently clamping the components and the parts by using tweezers and correctly placing the components and the parts on the corresponding bonding pads;
2.4 setting the temperature of the heating platform to 215-225 ℃, placing the cavity assembly with the components attached to the surface on a base tool, placing the cavity assembly on the heating platform together for sintering, observing under a microscope, and slightly correcting and fixing the cavity assembly by using tweezers if the components shift and tilt, so as not to pollute an area to be bonded; and after sintering, taking down the sintered cavity assembly and the base tool, placing the cavity assembly and the base tool on the heat dissipation block, and naturally cooling.
2.5, adjusting the pressure of a dispenser to 45-60 psi, uniformly dispensing a circle of soldering paste on the outer side of a DC insulator (DC 1616-0.45), wherein the module comprises 18 DC insulators (DC 1616-0.45), and inserting short needles and long needles of the DC insulator on which the soldering paste is spot-welded downwards on a foam plate for later use;
2.6 the DC insulator is assembled and sintered by inserting from the back to the front, the temperature of a heating platform is adjusted to be 130-150 ℃, a hot air gun is opened, the temperature is set to be 450-480 ℃, and the air speed is 80-100 ℃; placing the cavity assembly obtained in the step 2.4 with the back face upward on a heating table for preheating for 10-15 minutes, measuring the actual temperature to 120-130 ℃ by a thermometer, placing a DC insulator at a corresponding position in the cavity assembly, heating the insulator by using an air opening of a hot air gun, melting the soldering paste, enabling the soldering paste to have fluidity, slightly poking a fixed insulator by using tweezers to enable the soldering paste to fully permeate, sequentially sintering a plurality of insulators one by one in the mode, taking cotton gloves after sintering, taking off the cavity assembly, placing the cavity assembly on a heat dissipation block for cooling, measuring whether the insulator is short-circuited by using a universal meter after the room temperature is cooled, and transferring to the next process if the insulator is not short-circuited.
2.7 cleaning the cavity assembly by using a vapor phase cleaning machine, setting the temperature of the vapor phase cleaning machine at 60-70 ℃, cleaning for 15-20 minutes, after cleaning, checking the surface of the circuit board under a microscope to be clean, and then storing the circuit board in an anti-static box for later use.
And step 3: sintering the components on the local oscillator and feed circuit board;
3.1 the pressure of the dispenser is set to 40-60 psi, and a proper amount of soldering paste with the melting point of 183 ℃ and the ingredient of SN63CR32 is dispensed on the pad of the circuit board;
3.2 compare the three local oscillator circuit components and parts sintering map of map, wait to sinter the component list and be, voltage controlled oscillator: u1; a single chip microcomputer: u2, voltage stabilization block: u3, sheet resistance: r1, R2, R20, R21, R5-R8, R18, R19, R22, R23, R24, R25; chip capacitance: C1-C5, C8-C13, C7, C14-C15, C30-C32, C18, C21, C22, C19, C24, C25, C26, C35, C80, C31, sheet inductance: l1. Gently clamping the components and the parts by using tweezers and correctly placing the components and the parts on the corresponding bonding pads;
3.3 the sintering diagram of the four-feeder circuit component of the comparison diagram, wherein the list of the components to be sintered is as follows: u1; voltage stabilizing block: u2, sheet resistance: r1, R2, R3, R4, R5-R10, R11-R20, R21-R23; chip capacitance: c2, C4, C5; flat capacitance: c1 and C3. Gently clamping the components and the parts by using tweezers and correctly placing the components and the parts on the corresponding bonding pads;
3.4 setting the temperature of the heating platform to be 205-215 ℃, sequentially placing the local oscillator circuit board and the feed circuit board on which the components are stuck on the heating platform for sintering, observing under a microscope, and slightly correcting and fixing the components by using tweezers if the components shift and tilt; and after sintering, taking down the sintered circuit board, placing the circuit board on filter paper, and naturally cooling.
3.5 cleaning the local oscillation circuit assembly and the feed circuit assembly of the sintered components by using a vapor phase cleaning machine, wherein the temperature of the vapor phase cleaning machine is set to be 60-70 ℃, the cleaning time is 15-20 minutes, after the cleaning, the surface of the circuit board is inspected to be clean under a microscope, and the components are stored in an anti-static box for later use after being accurately pasted on the surface without problems.
3.6 the local oscillator circuit assembly and the feed circuit assembly obtained in the step 3.5 are electrically mounted in the cavity assembly obtained in the step 2.5 by using three combination screws with M1.6 multiplied by 5 pan heads, then the rectangular connector and the cavity filter are sequentially electrically mounted in the cavity assembly by using matched combination screws, then an electric soldering iron is prepared, the temperature is set to be 300-330 ℃, the melting point is 183 ℃, the component is SN63CR32 soldering wire, and the insulator, the cavity filter, the rectangular connector and the corresponding micro-strip are mutually connected and welded. After the electric welding is finished, the welding points are wiped clean by using wet alcohol cotton, and then the cavity assembly is placed in the anti-static box for later use.
And 4, step 4: eutectic-crystallizing a bare chip on a molybdenum-copper carrier;
4.1 comparing the eutectic chart of the chip to five, taking out the corresponding bare chip and the corresponding carrier under a microscope for matching, and requiring: confirming that the direction and the position of the chip, the position of the chip capacitor and the size of the carrier are proper; after matching is completed, eutectic is conducted on the bare chip and the chip capacitor to the corresponding carrier, and a list of eutectic chips, chip capacitors and carriers is waited: a low noise amplifier: u9, corresponding to molybdenum copper support: (2.5X 2.3X 0.2) mm; numerical control attenuator: u8, corresponding to molybdenum copper support: (2.5X 2.2X 0.2) mm; an attenuation chip: U15-U17, low noise Amplifier: U12-U14, chip capacitance: C25-C30, corresponding to molybdenum-copper support: (2.6X 2.5X 0.2) mm; a mixer: u11, corresponding to molybdenum copper support: (2.9X 1.94X 0.2) mm; an equalizer: u10, corresponding to molybdenum copper support: (0.95X 2X 0.2) mm.
4.2, opening the eutectic platform, setting the temperature at 310-320 ℃, and comparing a chip eutectic diagram with a fifth chip eutectic diagram when the temperature rises to the set temperature, wherein the eutectic mode of the U8-U11 chips is as follows: clamping a corresponding carrier and placing the corresponding carrier in the central area of an eutectic heating table, fixing the carrier by using tweezers, uniformly spreading a gold-tin soldering lug with the melting point of 280 ℃ and the component of 80Au20Sn on the surface of the carrier, melting the soldering lug, slightly scraping an oxide layer on the surface by using the tweezers, placing a corresponding bare chip on the carrier, clamping the edge of the chip by using the tweezers, slightly rubbing and fixing the edge of the chip, and clamping the chip after the eutectic is finished and placing the chip in an anti-static box for storage. U12-U17 is to put a plurality of chips and chip electric capacity eutectic in a carrier, and the chip eutectic mode is: clamping a corresponding carrier, placing the carrier in the central area of an eutectic heating table, fixing the carrier by using tweezers, uniformly spreading gold-tin soldering lugs on the surface of the carrier, clamping a bare chip, slightly rubbing the bare chip to a fixed position, clamping the chip, performing capacitive friction, and fixing, wherein the whole eutectic process is completed within 30 seconds, and clamping the bare chip and placing the bare chip in an antistatic box for later use. (multiple chips can be eutectic at the same time without scraping the oxide layer, and the manual operation can increase the whole eutectic time and oxidize more quickly)
And 5: gluing the chip assembly on the cavity;
5.1 opening the dispenser and adopting a continuous dispensing mode, wherein the pressure of the dispenser is set to be (45-65) psi; and sixthly, according to the chip gluing diagram, the chip assembly obtained in the last step 4.2 is sequentially glued into the cavity assembly from the step 3.6 by using conductive glue with the components of 1Oz/8Oz, and the chip capacitor is glued onto the corresponding micro-strip line in the cavity assembly. Uniformly dispensing a cross conductive adhesive in the corresponding position hole according to the size of the chip carrier, uniformly spreading the conductive adhesive by using a needle head, and gluing the chip assembly into the corresponding position hole.
5.2 after the surface of the chip assembly is pasted, the chip assembly is self-checked under a microscope, the direction is accurate, the surface of the chip is not scratched or pasted in a leakage way, the conductive adhesive does not pollute the area to be bonded, and the like.
5.3 opening the oven, setting the temperature at the required temperature point of 120 ℃, and preheating for 10-20 minutes; putting the assembly subjected to 5.2 self-inspection into a drying oven at 120 ℃ for 1.5h with cotton gloves; after the gluing is finished, taking the assembly out of the oven with the cotton gloves and naturally cooling the assembly to room temperature for later use;
step 6: gold wire bonding at corresponding positions
6.1 opening a 747677E type three-purpose bonding machine, bonding by adopting a pressure welding mode, setting the temperature of a heating table of the bonding machine to 90-105 ℃, and preheating for 5-10 minutes;
6.2 fixing the cavity assembly obtained in the fifth step on a heating table, adjusting the height of the working base table to enable the riving knife to be slightly lower than the chip to be bonded when the riving knife descends to the lowest, and then setting bonding pressure parameters.
6.3 comparing with the seventh pattern of gold wire bonding, gold wire bonding was performed. During bonding, the first point is welded on the chip assembly, the position of the first point is accurately aligned with the middle position of the bonding pad, the second point is welded on the microstrip line, the microstrip is subjected to halving bonding in double-wire bonding, the radian consistency of the gold wires is ensured, and the bonding distance is short.
And 7: debugging, testing, capping and marking.
After gold wire bonding is completed, peripheral circuits and instruments are connected, and the BUC up-conversion module can be debugged and tested. And after debugging and testing are finished, the BUC up-conversion module can be capped and marked. So far, the BUC up-conversion module is manufactured.
The technical scheme of the invention is a processing and manufacturing process of the BUC up-conversion module. The BUC up-conversion module has the advantages that: high power, wide frequency band and not easy to be interfered by microwave radiation. The BUC up-conversion module produced by the process completely meets the requirements of the whole machine in all performance indexes through testing, environmental experiments and field debugging of the whole machine. The technological process for producing the BUC up-conversion module is scientific, simple, convenient and reliable, the qualification rate of the produced products is high, and the BUC up-conversion module is suitable for batch production.
It is clear that the specific implementation of the invention is not restricted to the above-described embodiments, but that various insubstantial modifications of the inventive process concept and technical solutions are within the scope of protection of the invention.

Claims (9)

1. A manufacturing method of a Ku-band BUC up-conversion module is characterized by comprising the following steps: the method comprises the following steps: s1, sintering a microwave circuit board to a cavity; s2, sintering the components on the microwave circuit board; s3, sintering the components on the local oscillator and feed circuit board; s4, eutectic-crystallizing the bare chip on a molybdenum-copper carrier; s5, gluing the chip assembly to the cavity; s6, gold wire bonding is carried out on the corresponding position; s7, debugging, testing, capping and marking to finish manufacturing.
2. The method for manufacturing a Ku-band BUC up-conversion module according to claim 1, wherein: the step S1 comprises the following steps:
s1.1, cleaning a cavity to be sintered;
s1.2, preprocessing a soldering lug, introducing a CAD design drawing of the microwave circuit board into a laser cutting equipment computer in advance, carrying out laser cutting on the soldering lug according to the design drawing of the microwave circuit board, placing the soldering lug in an area to be marked, adjusting marking parameters, and finishing soldering lug preparation to ensure that the surface of the soldering lug is smooth and intact; taking a culture dish, pouring a proper amount of alcohol, carrying out soaking washing on the formed soldering lug for 2-3 minutes, taking out the formed soldering lug, and spreading the formed soldering lug on filter paper for air drying for later use;
s1.3, contrasting a sintering diagram of the microwave circuit board, injecting a proper amount of soldering flux at a position, to be sintered, of the circuit board by using a low-residue needle tube soldering flux, placing the molded soldering lug obtained in the step 1.2 in a cavity by using tweezers, injecting a proper amount of soldering flux on the surface of the soldering lug, standing for 1-2 minutes, and then placing the microwave circuit board in the cavity; selecting soldering paste, opening a dispenser, setting pressure, uniformly dispensing a circle of soldering paste on the outer sides of the radio frequency insulator and the feed-through filter, and mounting the radio frequency insulator and the feed-through filter to corresponding positions in a sintering diagram of the microwave circuit board;
s1.4, opening a heating platform, setting the temperature, placing a pressing block tool in a cavity, fixing a cover plate on the cavity by using a coiled head combination screw with the diameter of 1.6 multiplied by 5, placing the cavity on a base tool on the heating platform, measuring the real-time temperature of the cavity by using a thermometer to reach 220 ℃, observing the soldering paste on the outer side of the radio frequency insulator, melting the soldering paste, slightly shifting the fixed insulator, slightly screwing the screw on the cover plate, ensuring uniform force, and then using a cotton cloth glove to take the cavity assembly out of a radiating block for cooling; and taking down the cover plate and the pressing block tool after the cavity assembly is cooled.
3. The method for manufacturing a Ku-band BUC up-conversion module according to claim 1, wherein: the step S2 comprises the following steps:
s2.1, wiping the position of the microwave circuit to-be-pasted component clean by using wet alcohol cotton on the cavity assembly obtained in the step S1;
s2.2, preparing a dispenser, presetting the pressure of the dispenser, and dispensing a proper amount of soldering paste at a pad of the circuit board;
s2.3, comparing with a sintering diagram of the microwave circuit board component, wherein the list of the component to be sintered is as follows: t1; sheet resistance: R1-R3, R4, R5, R6, R7, sheet capacitance: c1, C2, C3, C4, C5-17, C18, C19, C20, C21, C22, sheet inductance: l1, L2; gently clamping the components and the parts by using tweezers and correctly placing the components and the parts on the corresponding bonding pads;
s2.4, setting the temperature of the heating platform to 215-225 ℃, placing the cavity assembly with the components on the surface on a base tool and placing the cavity assembly on the heating platform together for sintering, observing under a microscope, adjusting the components, and slightly correcting and fixing the components which are displaced and tilted by using tweezers; after sintering, taking down the sintered cavity assembly and the base tool, placing the cavity assembly and the base tool on the heat dissipation block, and naturally cooling;
s2.5, adjusting the pressure of a dispenser to 45-60 psi, uniformly dispensing a circle of soldering paste on the outer side of the DC insulator, wherein the module comprises 18 DC insulators, and inserting short pins and long pins of the DC insulator on which the soldering paste is spot-welded downwards on a foam board for later use;
S2.6DC insulator is assembled and sintered by inserting from the back to the front, the temperature of a heating platform is adjusted to 130-150 ℃, a hot air gun is opened, the temperature is set to 450-480 ℃, and the air speed is 80-100; placing the cavity assembly obtained in the step 2.4 with the back face upward on a heating table for preheating for 10-15 minutes, measuring the actual temperature to 120-130 ℃ by a thermometer, placing a DC insulator at a corresponding position in the cavity assembly, heating the insulator by using an air opening of a hot air gun, melting the soldering paste, enabling the soldering paste to have fluidity, slightly poking a fixed insulator by using tweezers to enable the soldering paste to fully permeate, sequentially sintering a plurality of insulators one by one in the mode, taking cotton gloves after sintering, taking down the cavity assembly, placing the cavity assembly on a heat dissipation block for cooling, measuring whether the insulator is short-circuited by using a universal meter after the room temperature is cooled, and transferring to the next process if the insulator is not short-circuited;
s2.7, cleaning the cavity assembly by using a vapor phase cleaning machine, setting the temperature of the vapor phase cleaning machine to be 60-70 ℃, cleaning for 15-20 minutes, after cleaning, checking the surface of the circuit board to be clean under a microscope, and storing the circuit board in an anti-static box for later use.
4. The method for manufacturing a Ku-band BUC up-conversion module according to claim 1, wherein: the step S3 comprises the following steps:
s3.1, setting the pressure of a dispenser to be 40-60 psi, and dispensing a proper amount of soldering paste with the melting point of 183 ℃ and the component of SN63CR32 at a circuit board pad;
s3.2, comparing the sintering chart of the local oscillator circuit component, wherein the list of the components to be sintered is as follows: u1; a single chip microcomputer: u2, voltage stabilization block: u3, sheet resistance: r1, R2, R20, R21, R5-R8, R18, R19, R22, R23, R24, R25; chip capacitance: C1-C5, C8-C13, C7, C14-C15, C30-C32, C18, C21, C22, C19, C24, C25, C26, C35, C80, C31, sheet inductance: l1; gently clamping the components and the parts by using tweezers and correctly placing the components and the parts on the corresponding bonding pads;
s3.3, comparing the sintering diagram of the feeder circuit component, wherein the list of the component to be sintered is as follows: u1; voltage stabilizing block: u2, sheet resistance: r1, R2, R3, R4, R5-R10, R11-R20, R21-R23; chip capacitance: c2, C4, C5; flat capacitance: c1 and C3. Gently clamping the components and the parts by using tweezers and correctly placing the components and the parts on the corresponding bonding pads;
s3.4, setting the temperature of the heating platform to be 205-215 ℃, sequentially placing the local oscillator circuit board and the feed circuit board on which the components are stuck on the heating platform for sintering, observing under a microscope, and slightly correcting and fixing the components by using tweezers if the components shift and tilt; after sintering, taking down the sintered circuit board, placing the circuit board on filter paper, and naturally cooling;
and S3.5, cleaning the local oscillation circuit assembly and the feed circuit assembly of the sintered component by using a vapor phase cleaning machine, wherein the temperature of the vapor phase cleaning machine is set to be 60-70 ℃, the cleaning time is 15-20 minutes, after the cleaning is finished, the surface of the circuit board is inspected to be clean under a microscope, and the components are stored in an anti-static box for later use after being accurately pasted and have no problem.
S3.6, the local oscillator circuit assembly and the feed circuit assembly obtained in the step 3.5 are electrically mounted in the cavity assembly obtained in the step 2.5 by using three combination screws with M1.6 multiplied by 5 pan heads, then the rectangular connector and the cavity filter are sequentially electrically mounted in the cavity assembly by using matched combination screws, then an electric soldering iron is prepared, the temperature is set to be 300-330 ℃, the melting point is 183 ℃, the component is SN63CR32 soldering wire, and the insulator, the cavity filter, the rectangular connector and the corresponding micro-strip are mutually connected and welded; after the electric welding is finished, the welding points are wiped clean by using wet alcohol cotton, and then the cavity assembly is placed in the anti-static box for later use.
5. The method for manufacturing a Ku-band BUC up-conversion module according to claim 1, wherein: step S4 comprises the following steps:
s4.1 comparing the eutectic diagram of the chip, taking out the corresponding bare chip and the corresponding carrier under a microscope for matching, and requiring that: confirming that the direction and the position of the chip, the position of the chip capacitor and the size of the carrier are proper; after matching is completed, eutectic is conducted on the bare chip and the chip capacitor to the corresponding carrier, and a list of eutectic chips, chip capacitors and carriers is waited: a low noise amplifier: u9, corresponding to molybdenum copper support: (2.5X 2.3X 0.2) mm; numerical control attenuator: u8, corresponding to molybdenum copper support: (2.5X 2.2X 0.2) mm; attenuation chip: U15-U17, low noise Amplifier: U12-U14, chip capacitance: C25-C30, corresponding to molybdenum-copper support: (2.6X 2.5X 0.2) mm; a mixer: u11, corresponding to molybdenum copper support: (2.9X 1.94X 0.2) mm; an equalizer: u10, corresponding to molybdenum copper support: (0.95X 2X 0.2) mm;
s4.2, opening the eutectic table, setting the temperature to be 310-320 ℃, and comparing a chip eutectic diagram with a fifth chip eutectic mode when the temperature rises to the set temperature, wherein the U8-U11 chip eutectic mode is as follows: clamping a corresponding carrier and placing the corresponding carrier in the central area of an eutectic heating table, fixing the carrier by using tweezers, uniformly spreading a gold-tin soldering lug with the melting point of 280 ℃ and the composition of 80Au20Sn on the surface of the carrier, slightly scraping an oxide layer on the surface of the soldering lug by using the tweezers when the soldering lug is melted, placing a corresponding bare chip on the carrier, clamping the edge of the chip by using the tweezers, slightly rubbing and fixing the chip, and clamping the chip after eutectic is finished and placing the chip in an anti-static box for storage; U12-U17 is eutectic and puts a plurality of chips and chip electric capacity in a carrier, and the chip eutectic mode is: clamping a corresponding carrier, placing the carrier in the central area of an eutectic heating table, fixing the carrier by using tweezers, uniformly spreading gold-tin soldering lugs on the surface of the carrier, clamping a bare chip to slightly rub a fixed position, clamping the chip to be fixed by capacitance friction, completing the whole eutectic process within 30 seconds, and clamping the bare chip to be placed in an antistatic box for later use after completion.
6. The method for manufacturing a Ku-band BUC up-conversion module according to claim 1, wherein: the step S5 comprises the following steps:
s5.1, opening a dispenser to adopt a continuous dispensing mode, and setting the pressure of the dispenser to be 45-65psi; sequentially adhering the chip assembly obtained in the last step 4.2 into the cavity assembly from the step 3.6 by using conductive adhesive with the components of 1Oz/8Oz and adhering the chip capacitor to the corresponding microstrip line in the cavity assembly by contrasting with the chip adhesion diagram; uniformly dispensing a cross-shaped conductive adhesive in the corresponding position hole according to the size of the chip carrier, uniformly spreading the conductive adhesive by using a needle, and gluing the chip assembly in the corresponding position hole;
5.2 after the surface of the chip assembly is pasted, the chip assembly is self-checked under a microscope, the direction is accurate, the surface of the chip is not scratched or pasted in a leakage way, the conductive adhesive does not pollute the area to be bonded, and the like;
5.3, opening the oven, setting the temperature at a required temperature point of 120 ℃, and preheating for 10-20 minutes; putting the assembly subjected to 5.2 self-inspection into a drying oven at 120 ℃ for 1.5h with cotton gloves; after the gluing is finished, the assembly is taken out from the oven with the cotton gloves and naturally cooled to room temperature for standby.
7. The method for manufacturing a Ku-band BUC up-conversion module according to claim 1, wherein: the step S6 comprises the following steps:
s6.1, opening a 747677E type three-purpose bonding machine, bonding by adopting a pressure welding mode, setting the temperature of a heating table of the bonding machine to be 90-105 ℃, and preheating for 5-10 minutes;
6.2 fixing the cavity assembly obtained in the fifth step on a heating table, adjusting the height of a working base table to enable the chopper to be slightly lower than the chip to be bonded when the chopper descends to the lowest level, and then setting bonding pressure parameters;
6.3 comparing with the gold wire bonding diagram, performing gold wire bonding; during bonding, the first point is welded on the chip assembly, the position of the first point is accurately aligned with the middle position of the bonding pad, the second point is welded on the microstrip line, the microstrip is subjected to halving bonding in double-wire bonding, the radian consistency of the gold wires is ensured, and the bonding distance is short.
8. The method for manufacturing a Ku-band BUC up-conversion module according to claim 1, wherein: step S7 includes: after gold wire bonding is completed, peripheral circuits and instruments are connected to debug and test the BUC up-conversion module; and after debugging and testing are finished, capping and marking are carried out on the BUC up-conversion module.
9. The utility model provides a Ku wave band BUC up-conversion module which characterized in that: the Ku-band BUC up-conversion module is manufactured by the method according to any one of claims 1 to 8.
CN202211723416.7A 2022-12-30 2022-12-30 Manufacturing method of Ku-band BUC up-conversion module and up-conversion module Pending CN115988763A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211723416.7A CN115988763A (en) 2022-12-30 2022-12-30 Manufacturing method of Ku-band BUC up-conversion module and up-conversion module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211723416.7A CN115988763A (en) 2022-12-30 2022-12-30 Manufacturing method of Ku-band BUC up-conversion module and up-conversion module

Publications (1)

Publication Number Publication Date
CN115988763A true CN115988763A (en) 2023-04-18

Family

ID=85962303

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211723416.7A Pending CN115988763A (en) 2022-12-30 2022-12-30 Manufacturing method of Ku-band BUC up-conversion module and up-conversion module

Country Status (1)

Country Link
CN (1) CN115988763A (en)

Similar Documents

Publication Publication Date Title
CN106572607B (en) Process manufacturing method of solid-state microwave source
CN107645849B (en) Method for manufacturing microwave excitation high-frequency module
CN107367713B (en) Manufacturing and processing method of front-end module of K2 waveband receiver
CN106714471B (en) Manufacturing process of S-band pulse 3-watt amplifier
CN105530017B (en) Method for manufacturing receiving front end of broadband receiving and transmitting system
CN108112184B (en) Manufacturing method of S-band 100-watt pulse power amplifier
JPH08285892A (en) Structure for test of bare integrated circuit device
CN111106104A (en) Manufacturing process of 18-28GHZ T assembly
CN107708400A (en) Power connects the processing method of pulse amplifier in X-band
CN108768304A (en) A kind of manufacture craft of 50 watts of power amplifiers of S-band
CN107396546A (en) The preparation method of miniaturization lock same axis medium Microwave Frequency Source
CN108966625A (en) A kind of manufacture craft of signal source module power amplifier
CN108039553A (en) A kind of Ku wave bands one divide the manufacture craft of three power splitters
CN109769352A (en) A kind of production method of 80W power amplifier module
CN105099370A (en) Pre-frequency mixer processing method
CN109347450A (en) A kind of processing method of Asia 20 watts of pulse power amplifiers of terahertz wave band
CN109755715A (en) The production method of the airtight grade microwave switch module of Ka full frequency band
CN115988763A (en) Manufacturing method of Ku-band BUC up-conversion module and up-conversion module
CN111934077A (en) Manufacturing process of Ka-band waveguide receiving module
CN109104826A (en) A kind of manufacture craft of multiple-frequency modulation device
CN113871834A (en) Manufacturing process of quadruple frequency module
CN109673104B (en) Excitation signal module processing method for frequency synthesizer
CN217787175U (en) Patch type GaN power device test keysets
CN109672410B (en) Manufacturing method of Ka-band frequency conversion module
US3911568A (en) Method and apparatus for bonding miniature semiconductor pill-type components to a circuit board

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination