CN115968588A - 显示基板及电子装置 - Google Patents
显示基板及电子装置 Download PDFInfo
- Publication number
- CN115968588A CN115968588A CN202180002145.3A CN202180002145A CN115968588A CN 115968588 A CN115968588 A CN 115968588A CN 202180002145 A CN202180002145 A CN 202180002145A CN 115968588 A CN115968588 A CN 115968588A
- Authority
- CN
- China
- Prior art keywords
- electrode
- point
- substrate
- layer
- display substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 203
- 239000010410 layer Substances 0.000 claims description 238
- 239000002346 layers by function Substances 0.000 claims description 36
- 238000007373 indentation Methods 0.000 claims description 11
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 239000002585 base Substances 0.000 description 57
- 239000000463 material Substances 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 238000000034 method Methods 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 230000008569 process Effects 0.000 description 17
- 238000002347 injection Methods 0.000 description 16
- 239000007924 injection Substances 0.000 description 16
- 238000002679 ablation Methods 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 7
- 230000000737 periodic effect Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000012876 topography Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- -1 tiOPc Chemical compound 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QMZLVVGXNPIXFS-UHFFFAOYSA-N 2,5-bis(2-octyldodecyl)-1-thiophen-2-yl-4-[5-(5-thiophen-2-ylthiophen-2-yl)thiophen-2-yl]pyrrolo[3,4-c]pyrrole-3,6-dione Chemical compound C(CCCCCCC)C(CN1C(C2=C(N(C(C2=C1C=1SC=CC=1)=O)CC(CCCCCCCCCC)CCCCCCCC)C=1SC(=CC=1)C=1SC(=CC=1)C=1SC=CC=1)=O)CCCCCCCCCC QMZLVVGXNPIXFS-UHFFFAOYSA-N 0.000 description 1
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- SKEDXQSRJSUMRP-UHFFFAOYSA-N lithium;quinolin-8-ol Chemical compound [Li].C1=CN=C2C(O)=CC=CC2=C1 SKEDXQSRJSUMRP-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80515—Anodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80521—Cathodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
一种显示基板及电子装置。该显示基板包括衬底基板、位于该衬底基板上的介质层、像素界定层、第一电极层和第二电极层。该第一电极层包括间隔的第一电极和第二电极。该介质层对应该第一电极和第二电极之间的间隔的部分包括第一凹槽，该间隔暴露该第一凹槽，该第二电极层对应该第一凹槽的部分包括凹陷结构；该像素界定层覆盖该第一凹槽并形成第二凹槽；该显示基板具有与该衬底基板垂直的截面，该凹陷结构包括位于该截面的第一凹陷点和第二凹陷点；在该截面内且在平行于该衬底基板的方向上，该第二凹槽靠近该第一电极的第一侧表面与该第一电极的边缘之间的距离L1大于该第一凹陷点与该第二凹槽的第一侧表面之间的距离L2。该显示基板有助于提高良率。
Description
PCT国内申请，说明书已公开。
Claims (20)
- PCT国内申请，权利要求书已公开。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410377453.XA CN118284167A (zh) | 2021-08-11 | 2021-08-11 | 显示基板及电子装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2021/112068 WO2023015488A1 (zh) | 2021-08-11 | 2021-08-11 | 显示基板及电子装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410377453.XA Division CN118284167A (zh) | 2021-08-11 | 2021-08-11 | 显示基板及电子装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115968588A true CN115968588A (zh) | 2023-04-14 |
Family
ID=85200457
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410377453.XA Pending CN118284167A (zh) | 2021-08-11 | 2021-08-11 | 显示基板及电子装置 |
| CN202180002145.3A Pending CN115968588A (zh) | 2021-08-11 | 2021-08-11 | 显示基板及电子装置 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410377453.XA Pending CN118284167A (zh) | 2021-08-11 | 2021-08-11 | 显示基板及电子装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US20240179950A1 (zh) |
| EP (1) | EP4280843A4 (zh) |
| CN (2) | CN118284167A (zh) |
| WO (1) | WO2023015488A1 (zh) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102325674B1 (ko) * | 2017-08-16 | 2021-11-12 | 엘지디스플레이 주식회사 | 유기발광 표시장치, 그를 포함한 헤드 장착형 디스플레이, 및 그의 제조방법 |
| KR102646218B1 (ko) * | 2018-11-02 | 2024-03-08 | 엘지디스플레이 주식회사 | 전계 발광 표시 장치 |
| KR20200082491A (ko) * | 2018-12-28 | 2020-07-08 | 엘지디스플레이 주식회사 | 표시장치 |
| CN109830184B (zh) * | 2019-02-22 | 2021-04-27 | 京东方科技集团股份有限公司 | 一种电致发光显示面板及其制备方法、显示装置 |
| KR20210001595A (ko) * | 2019-06-28 | 2021-01-06 | 엘지디스플레이 주식회사 | 표시장치 및 이의 제조방법 |
| CN111599851B (zh) * | 2020-06-02 | 2023-04-11 | 京东方科技集团股份有限公司 | 一种显示面板和显示装置 |
| CN111668382B (zh) * | 2020-06-19 | 2023-03-28 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
| CN112186020B (zh) * | 2020-09-30 | 2024-06-11 | 京东方科技集团股份有限公司 | 柔性显示基板、制备柔性显示基板的方法和显示装置 |
-
2021
- 2021-08-11 US US17/793,765 patent/US20240179950A1/en active Pending
- 2021-08-11 CN CN202410377453.XA patent/CN118284167A/zh active Pending
- 2021-08-11 CN CN202180002145.3A patent/CN115968588A/zh active Pending
- 2021-08-11 WO PCT/CN2021/112068 patent/WO2023015488A1/zh active Application Filing
- 2021-08-11 EP EP21953112.6A patent/EP4280843A4/en active Pending
-
2024
- 2024-05-29 US US18/676,909 patent/US20240315088A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN118284167A (zh) | 2024-07-02 |
| US20240179950A1 (en) | 2024-05-30 |
| EP4280843A1 (en) | 2023-11-22 |
| WO2023015488A1 (zh) | 2023-02-16 |
| US20240315088A1 (en) | 2024-09-19 |
| EP4280843A4 (en) | 2024-05-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US12075644B2 (en) | Array substrate and method for manufacturing the same, display panel and display device | |
| CN110010736B (zh) | 电致发光显示装置 | |
| US11183542B2 (en) | Display panel and method for manufacturing display panel | |
| US11539017B2 (en) | Display substrate having spacer for spacing apart carrier injection layer portions of two adjacent sub-pixels, and manufacturing method thereof | |
| CN109428003B (zh) | 电致发光显示装置 | |
| CN113812014B (zh) | 一种阵列基板及其制备方法和显示面板 | |
| CN112542495A (zh) | 显示面板与显示装置 | |
| CN109994514B (zh) | 电致发光显示装置 | |
| CN109728187B (zh) | 电致发光显示装置 | |
| US11968853B2 (en) | Organic electroluminescent structure and display device | |
| CN115968588A (zh) | 显示基板及电子装置 | |
| WO2023015487A1 (zh) | 显示基板及电子装置 | |
| US11056665B2 (en) | Electroluminescent display device | |
| US12133439B2 (en) | Display panel and display device | |
| US20240040880A1 (en) | Display panel and display device | |
| US20240215318A1 (en) | Display substrate | |
| US20220102683A1 (en) | Display panel, method for manufacturing the same and display device | |
| CN113903782A (zh) | 显示面板及显示装置 | |
| CN118414018A (zh) | 发光二极管显示装置 | |
| CN118434201A (zh) | 有机发光二极管显示装置及其制造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |