CN115954275B - Chip packaging method and device based on hot-pressing spherical bonding and chip packaging structure - Google Patents
Chip packaging method and device based on hot-pressing spherical bonding and chip packaging structure Download PDFInfo
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 116
- 238000000034 method Methods 0.000 title claims abstract description 103
- 238000007731 hot pressing Methods 0.000 title claims description 4
- 238000003466 welding Methods 0.000 claims abstract description 35
- 230000008569 process Effects 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 230000005496 eutectics Effects 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 12
- 238000010330 laser marking Methods 0.000 claims abstract description 9
- 238000009516 primary packaging Methods 0.000 claims abstract description 8
- 238000009713 electroplating Methods 0.000 claims abstract description 7
- 238000011417 postcuring Methods 0.000 claims abstract description 7
- 239000011347 resin Substances 0.000 claims abstract description 7
- 229920005989 resin Polymers 0.000 claims abstract description 7
- 238000012360 testing method Methods 0.000 claims abstract description 4
- 239000002245 particle Substances 0.000 claims description 73
- 239000011159 matrix material Substances 0.000 claims description 60
- 239000011261 inert gas Substances 0.000 claims description 17
- 230000001133 acceleration Effects 0.000 claims description 15
- 150000002500 ions Chemical class 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 14
- 238000005457 optimization Methods 0.000 claims description 12
- 238000012544 monitoring process Methods 0.000 claims description 11
- 238000004364 calculation method Methods 0.000 claims description 9
- 238000005452 bending Methods 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 6
- 238000010304 firing Methods 0.000 claims description 6
- 238000009740 moulding (composite fabrication) Methods 0.000 claims description 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 5
- 230000009471 action Effects 0.000 claims description 3
- 239000006185 dispersion Substances 0.000 claims description 3
- 230000005484 gravity Effects 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 5
- 230000002950 deficient Effects 0.000 abstract description 3
- 230000006870 function Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 238000009517 secondary packaging Methods 0.000 description 4
- 238000007906 compression Methods 0.000 description 3
- 238000012536 packaging technology Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000009518 tertiary packaging Methods 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 210000001787 dendrite Anatomy 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Abstract
The invention provides a chip packaging method and device based on hot-pressed ball bonding and a chip packaging structure, wherein the method comprises the following steps: dicing the wafer to obtain a plurality of semiconductor bare chips which can be electrically connected and have fixed patterns; carrying out high-temperature eutectic welding on the semiconductor bare chip and the substrate; wire bonding is carried out on the obtained chip with the base material and the lead frame; placing the radiating fin below the bonded chip body, and packaging the whole body by adopting an EMC resin material; post-curing and laser marking are carried out on the packaged product; and electroplating, forming and dispersing the obtained product, and packaging after testing to obtain the chip packaging structure after primary packaging. The invention can avoid the defect of increasing defective rate in the chip bonding process caused by the offset of the bonding path due to the unstable power in the bonding process, and simultaneously makes the whole lead bonding path shortest, thereby effectively controlling the quality of chip packaging from the lead bonding process and ensuring the yield of the packaged chips.
Description
Technical Field
The invention belongs to the technical field of chip packaging, and particularly relates to a chip packaging method and device based on hot-pressed ball bonding and a chip packaging structure.
Background
With the development of science and technology, a nonvolatile memory is widely used in our daily life, and a nonvolatile memory is adopted by a short message stored on a mobile phone, a file stored in a USB, a program code in a computer and the like. The structure and method of the chip package will determine the stability of the chip during use and the connection with other circuits, which affects the performance of the chip. The packaging technology is a technology for packaging an integrated circuit using an insulating material. The chip package has the functions of providing power, improving signal transmission, assisting heat dissipation, protecting electronic components, constructing a human-computer interface and the like, so the chip package is an essential link in chip manufacturing and utilization.
With the development of memory chips, we can know that every 18 months, the density of the chip and its pins are doubled. Therefore, the pin count of the memory is also increasing, and the memory is more dense. This creates a significant challenge for the packaging of the chip. Chip packaging is an indispensable step in the use process of chips, and various novel packaging forms are also layered in order to meet the market demand for chip packaging.
For high-density multi-pin array packaging, the current mainstream patch packaging technology and BGA (ball grid array) packaging technology have the problems of package warpage, difficult repair and the like. In the prior art, chip packaging is divided into primary packaging, secondary packaging and tertiary packaging, wherein the primary packaging is to package chips into single chip assemblies (SCM) and multi-chip assemblies (MCM) by using a packaging shell, the secondary packaging is to package and assemble a printed circuit board, components of the primary packaging are assembled on the Printed Circuit Board (PCB), and the tertiary packaging is to check the components of the secondary packaging on the same motherboard, namely, interconnection of plug-in interfaces, mainboards and components; wire bonding is required in the primary packaging process, and the conventional wire bonding method is generally classified into three methods, namely, thermocompression bonding, thermosonic bonding and ultrasonic bonding, and in the wire bonding process, an external air source for supplying inert gas (such as nitrogen) to the outside of connection in the semiconductor device wire bonding apparatus as disclosed in chinese patent application CN114843199a is generally required for blowing antioxidant gas to the bonding region, and in the bonding process, the bonding of the chip to the arc-shaped wire bonding wire of the substrate or the lead frame is generally performed by the wire bonding method as disclosed in CN111048447A, CN111106021 a.
Although some of the techniques consider that a wire connected to a chip or an electrode forms a wire arc under the pressure of a wire clamp in the bonding process, the wire forming the wire arc has a certain tension due to the characteristics of the material of the wire itself, and the tension of the wire and the clamping force of the wire clamp directly influence the bonding quality and the bonding efficiency, so that the technique of wire bonding is improved, but only the influencing factors of the tension of the bonded wire on a vertical two-dimensional section are considered; however, the three-dimensional movement of the bonding machine in the three-dimensional horizontal coordinate system where the wire bonding machine is located and in the three-dimensional moving coordinate system where the bonding head is located is not considered, so that the wire clamp drives the bonding head to pull along the vertical z-axis direction of the three-dimensional horizontal coordinate system and the resistance caused by the inert gas blown for oxidation resistance to the movement of the bonding head, and further the three-dimensional real-time moving coordinate and the moving speed in the three-dimensional moving coordinate system where the bonding head is located are not considered, and further the real-time walking path of the arc-shaped lead finally formed between the first welding point of the chip and the second welding point of the substrate or the lead frame by the bonding head is not considered.
Therefore, the prior art ignores that in the chip processing and packaging process, the adjacent two leads are overlapped to generate short circuit to burn the chip due to overlong leads or irregular wire arc shape; or the phenomenon of wire collapse caused by overlong leads and the influence of factors of shorting with other leads on the yield of the chip package.
Disclosure of Invention
The invention aims at the defects and provides a chip packaging method, a device and a chip packaging structure based on hot-press ball bonding. The invention can avoid the defect of increasing defective rate in the chip bonding process caused by deviation of the wire bonding path due to unstable power of gas disturbance resistance caused by a vacuum tensioning device and inert gas at a certain time or at a certain stage in the bonding process, and simultaneously, the method finally makes the whole wire bonding path shortest, avoids the condition of wire collapse caused by overlong wire or overhigh arc height and smaller arc corner after wire bonding, and further can effectively control the quality of chip packaging from the wire bonding process, and ensures the yield after chip packaging.
The invention provides the following technical scheme: the chip packaging method based on hot-pressing ball bonding comprises a front step and a back step, wherein the front step comprises wafer scribing, eutectic welding of a chip and a substrate and wire bonding, and the back step comprises packaging, post-curing, laser marking, electroplating and forming dispersion, and the method comprises the following steps:
1) Dicing the wafer to obtain a plurality of semiconductor bare chips which can be electrically connected and have fixed patterns;
2) Performing high-temperature eutectic welding on the semiconductor bare chip and a substrate;
3) Wire bonding is carried out on the obtained chip with the base material and the lead frame;
4) Placing the radiating fin below the bonded chip body, and then packaging the whole body by adopting EMC resin materials according to the number of outer pins of the package body shell and the lead frame;
5) Post-curing and laser marking are carried out on the packaged product;
6) Electroplating, forming and dispersing the product obtained in the step 5), and packaging after testing to obtain a chip packaging structure after primary packaging;
the wire bonding method adopted in the step 3) comprises the following steps:
s1: positioning three-dimensional coordinates of a first bonding point of a j-th arc bonding wire of an i-th bonding pad on a chip
And the three-dimensional coordinates of the second bonding point on the lead frame bonded thereto by the j-th arc bonding wire>
S2: planning a wire bonding path from a first welding point to a second welding point of a j-th arc bonding wire of an i-th welding disc of the chip;
s3: and (2) adopting a wire bonding system to weld a first welding point of a j-th arc bonding wire of an i-th welding disc on the chip to a second welding point on the lead frame by adopting a spherical welding technology according to the method for planning the wire bonding path in the step (S2) to form a j-th arc bonding wire, and adopting the method for planning the wire bonding path of the chip in the step (S2) to bond a plurality of chips and the leads on the lead frame.
Further, the step S2 of planning a wire bonding path from a first bonding point to a second bonding point of a j-th arc bonding wire of an i-th bonding pad of the chip includes the following steps:
s21: the force that a vacuum tensioning device defining a wire bonding system gives a capillary-shaped bonding head port to a wire pulled to move upwards is the upward moving force L, and the resistance that an inert gas supply device gives a capillary-shaped bonding head port to a wire is the resistance R, so that three-dimensional coordinates of the capillary-shaped bonding head of the wire bonding system moving in a horizontal coordinate system of a bonding machine are collected in real time
The movement speed in the horizontal coordinate system due to the force L of the upward movement and the force F formed after the counteracting of the resistance R>
Offset angle +.about.x-axis in horizontal coordinate system>
Offset angle +.about.y-axis in horizontal coordinate system>
Offset angle +.about.z-axis in horizontal coordinate system>
s22: acquiring in real time according to the step S21 Calculating the real-time x-axis movement speed of the capillary-like bonding head of the wire bonding system in a horizontal coordinate system
Real-time y-axis movement speed +.>
And real-time z-axis movement speed
S23: constructing a pneumatic balance equation in the process of moving the arc bonding wire in real time;
s24: and (3) constructing an arc bonding wire path planning model on the basis of the pneumatic balance equation constructed in the step S23:
s25: adopting a particle swarm optimization algorithm to iteratively optimize the arc bonding wire path planning model constructed in the step S24, and searching an optimal site of the arc bonding wire at the moment t
And optimal offset angles of capillary bonding heads of the wire bonding system along an x axis, a y axis and a z axis respectively under a horizontal coordinate system at the time t>
And->
Further, the semiconductor bare chip has a size of 5800 μm×4140 μm; the step 5) further comprises cutting off the radiating fins, namely cutting off part of the radiating fins beyond the two ends of the shell of the packaging body; the bending attaching direction of the outer pins faces to the upper side of the packaging body or faces to the lower side of the packaging body.
Further, in the step S22, a real-time x-axis movement speed of the capillary-like bonding head of the wire bonding system in a horizontal coordinate system is calculated 
Real-time y-axis movement speed +.>
And real-time z-axis movement speed->
The formulas of (a) are as follows:
further, the pneumatic balance equation during the real-time moving process of the arc bonding wire constructed in the step S23 is as follows:
wherein, the j-th arc bonding wire with alpha (t) being the i-th bonding pad moves under a coordinate system at the moment tM is the mass of the arc bonding wire, g is the gravitational acceleration, typically 9.81m/s 2 D is the point of the j-th arc bonding wire t of the i-th bonding pad on the arc bonding wire at the moment
The distance from the origin of the horizontal coordinate system,
the offset angular acceleration of the capillary type bonding head at the moment t under a horizontal coordinate system is given; />
Moving acceleration of the capillary type bonding head in real time at t moment under a horizontal coordinate system; l (L) x Imparting to said vacuum tensioning device a force L on the x-axis component of a moving coordinate system, L, to the capillary-like bond head port, the force L being drawn to move upwards y Imparting to said vacuum tensioning device a y-axis component force, L, in a moving coordinate system, of a force L, in which a wire of a capillary-like bond head port is pulled to move upward z The force L for the vacuum tensioning device to give the capillary-like bond head port lead wire pulled to move upwards is a z-axis component in a moving coordinate system.
Further, the calculation formula of the path inclination angle alpha (t) of the jth arc bonding wire of the ith bonding pad under the moving coordinate system at the moment t is as follows:
further, in the step S25, a particle swarm optimization algorithm is adopted to optimize the arc bonding wire path planning model constructed in the step S24, and the method comprises the following steps:
s251: arc bonding wire site at t moment
The capillary-shaped bonding head at the moment t is divided in a horizontal coordinate systemOffset angles +.>
And->
Constructing a k generation particle parameter matrix at the moment of t:
s252: initializing a particle parameter matrix to a known k+1st generation particle update rate
Carrying out updating iteration, and calculating a k+1st generation particle parameter matrix at the moment t:
wherein the known k+1st generation particle update rate
The following are provided:
wherein,,
the particle update rate of the kth generation of particle parameters at the moment t; omega is the inertial weight of particle update and is used for controlling the balance of particle optimization global search and local search; c 1 Updating a first acceleration factor for the particle; c 2 Updating a second acceleration factor for the ions;
s253: k+1st generation optimal particle parameter matrix at t moment
Updating rules, and judging the k+1st generation particle parameter matrix number at t moment>
Optimal particle parameter matrix of k generation at t moment +. >
If the difference value of the updated function values is larger than the updated optimal point threshold epsilon, if so, the k-th generation of optimal particle parameter matrix at the t moment is adopted +.>
The latest optimal particle parameter matrix of the k+1st generation at the moment t, otherwise, the ion parameter matrix of the k+1st generation at the moment t is +.>
For the latest best particle parameter matrix:
wherein,,
for the k+1st generation of particle parameter matrix at time t, the function value is updated, < >>
The function value is updated for the k-th generation optimal ion parameter matrix at the t moment;
update function value of k-th generation optimal ion parameter matrix at t moment
The calculation formula of (2) is as follows: />
Namely, calculating k-th generation optimal ion parameter matrix +.>
Rank of (c);
the calculation formula for updating the optimal point threshold epsilon is as follows:
wherein,,
for the k-th generation particle parameter matrix at time t->
Optimal particle parameter matrix of k generation at t moment +.>
Is a difference matrix formed by the respective vector differences>
Is the inverse of the matrix of (a)
Is a rank of (c).
S254: repeating the steps S251-S253 until an optimal particle parameter matrix at the moment t is obtained:
the invention also provides a chip packaging structure obtained by packaging according to any one of the above methods.
The invention also provides a chip packaging device adopting the chip packaging method, the chip packaging device comprises a wire bonding system and a main control module, wherein the wire bonding system is used for wire bonding, the wire bonding system comprises an X-axis sliding rail, an X-axis screw assembly, an X-axis servo motor, a Y-axis sliding rail, a Y-axis screw assembly, a Y-axis servo motor, a Z-axis sliding rail, a Z-axis screw assembly and a Z-axis servo motor, the X-axis sliding rail, the X-axis screw assembly, the X-axis servo motor, the Y-axis sliding rail, the Y-axis screw assembly, the Y-axis servo motor, the Z-axis servo motor are used for driving a wire clamp to move in a three-dimensional horizontal coordinate system of the wire bonding system, and a first servo motor for controlling the wire clamp to perform three-dimensional deflection movement in the horizontal coordinate system and an inert gas supply device for supplying inert gas;
The lead bonding system further comprises a GPS positioning sensor and an angular velocity sensor, wherein the GPS positioning sensor is used for acquiring three-dimensional coordinates of the lead clip in a horizontal coordinate system in real time;
a tension sensor for monitoring the upward movement force L in real time, and a gas pressure sensor for monitoring resistance R generated when the inert gas supply device supplies gas in real time;
a linear velocity sensor for monitoring in real time the movement velocity of the capillary-like bonding head in a horizontal coordinate system under the action of a force F formed by the upward movement force L and the resistance force R after being counteracted;
the upper part of a wire clamp of the wire bonding system is connected with a vacuum tensioning device for tensioning the inner lead of the wire clamp, and the lower part of the wire clamp is provided with a capillary bonding head; the wire bonding system also comprises a firing rod arranged at the lower part of the capillary-shaped bonding head and used for firing a wire led out of the capillary-shaped bonding head when the wire bonding is carried out at the first welding point and the second welding point;
the X-axis servo motor, the Y-axis servo motor, the Z-axis sliding rail, the Z-axis servo motor, the first servo motor, the vacuum tensioning device, the ignition rod, the tension sensor, the gas pressure sensor, the linear velocity sensor and the angular velocity sensor of the wire bonding system are all in electric signal connection with the main control module, and the main control module is used for controlling the wire bonding system by adopting the chip packaging method as described above and according to the wire bonding path planned by the wire bonding method of the step S1-the step S3.
The beneficial effects of the invention are as follows:
1. the invention monitors the coordinate and the angular velocity of the capillary bonding head in the wire bonding system of the bonding machine under the horizontal coordinate system of the capillary bonding head in real time through the sensor,further converting into real-time coordinates and angular velocity of the capillary bonding head under the wire clamp under a moving coordinate system capable of three-dimensionally rotating, monitoring the force L of the capillary bonding head port, which is drawn to move upwards by the wire, in real time through a tension sensor (the force L of upward movement is given by a vacuum tensioning device under the moving coordinate system), monitoring the resistance R of inert gas to the bonding head in real time through a gas pressure sensor, and further constructing a pneumatic balance equation in the real-time movement process of the arc bonding wire, wherein the pneumatic balance equation comprises the step of decomposing the force L of upward movement into an x-axis component force L under the moving coordinate system x Component force L of y axis y And z-axis component force L z And constructing an arc bonding wire path planning model under the constraint of an aerodynamic balance equation in the real-time movement process of the arc bonding wire with the gas resistance R:
2. The chip packaging method constructs an arc bonding path minimization model under the constraint of a pneumatic balance equation, and adopts a particle swarm optimization algorithm in the optimization processCoordinate points in the bonding wire path at each moment
Three-dimensional corner of bonding head under horizontal coordinate system pulled by bonding machine>
And
constructing a k generation particle parameter matrix at the moment of t: />
Further update rate by custom known k+1st generation particles +.>
The example parameter matrix at each moment is iterated continuously, and then the optimal point threshold epsilon is updated through self definition:
judgment standard
Judging whether a particle parameter matrix at the moment t reaches the optimal or not according to the particle swarm optimization iteration result, and bonding a lead optimal site in an arc shape at the moment t
And optimal offset angles of capillary bonding heads of the wire bonding system along an x axis, a y axis and a z axis respectively under a horizontal coordinate system at the time t>
And->
And (3) positioning the bonding site at each moment and the three-dimensional corner of the bonding machine under the horizontal three-dimensional coordinate in real time.
3. The chip packaging method adopted by the invention welds the semiconductor bare chip and the substrate by adopting a eutectic welding method before bonding the chip and the lead frame, and the step of adopting the eutectic welding is adopted to ensure that the eutectic solder adopted in the chip packaging is lower than the melting point of a pure component, thereby simplifying the melting process, the eutectic alloy has better fluidity than pure metal, and dendrite formation which can prevent liquid from flowing can be prevented in solidification, thereby improving the casting performance, reducing casting defects such as segregation and shrinkage cavity and the like in the constant temperature transformation (without solidification temperature range) in the eutectic welding process, and obtaining microstructures with various forms, in particular to lamellar or rod-shaped eutectic structures which are regularly arranged, and being better than the conductive adhesive bonding technology or reflow soldering technology for bonding the chip and the substrate in the prior art.
4. According to the chip packaging structure packaged by the chip packaging method, the radiating fins are arranged inside the shell formed by the EMC resin material and below the chip body after eutectic welding with the base material, so that the radiating performance of the chip packaged by the chip packaging method can be effectively improved, the heat-resistant working time of the PCB caused by overlarge calculated amount in the operation process of the memory device and the logic device of the PCB with the chip is further improved, the condition that the circuit performance is reduced or damaged due to overlarge calculated amount of the PCB is avoided, and the working stability, the severe environment resistance and the large workload of the components of the PCB are improved.
5. In the chip packaging method provided by the invention, when the final chip is packaged, the package body shells with different shapes, which are formed by four EMC resin materials as shown in fig. 4-7, can be adopted, the outer pins and the EMC resin material shells are packaged together, and the selective combined packaging can be carried out according to different chip package shell structures and the number of the outer pins, so that the applicability of the chip internal structure of the lead with the radiating fin and the lead wire with optimized lead wire bonding paths is improved, and the chip packaging method is widely suitable for the requirements of PCB (printed circuit board) secondary packaging structures with different shell structures and the number of the outer pins.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the embodiments of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims thereof as well as the appended drawings.
Drawings
The invention will be described in more detail hereinafter on the basis of embodiments and with reference to the accompanying drawings. Wherein:
fig. 1 is a schematic flow chart of a chip packaging method based on thermocompression ball bonding.
Fig. 2 is a schematic plan view of wire bonding in the die packaging method based on thermocompression ball bonding according to the present invention.
Fig. 3 is an assembly diagram of the chip packaging method based on thermo-compression ball bonding in the packaging process.
Fig. 4 is a diagram showing an outline structure of a product 1 obtained by packaging by the chip packaging method provided by the invention.
Fig. 5 is a diagram showing the outline structure of a product 2 obtained by packaging by the chip packaging method provided by the invention.
Fig. 6 is a diagram showing the outline structure of a product 3 obtained by packaging by the chip packaging method provided by the invention.
Fig. 7 is a diagram showing the outline structure of a product 4 obtained by packaging by the chip packaging method provided by the invention.
Fig. 8 is a schematic flow chart of a wire bonding method adopted by the chip packaging method provided by the invention.
Fig. 9 is a horizontal coordinate system and a moving coordinate system of the wire bonding method according to the present invention, and a stress condition of a point of a wire to be bonded.
Fig. 10 is a schematic structural diagram of a chip packaging device provided by the present invention.
The technical features corresponding to the reference numerals in the figures are as follows:
1. a semiconductor bare chip; 2. a substrate; 3. a lead frame; 4. a heat sink; 5. and (5) packaging the shell.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown in fig. 1, a flow chart of a chip packaging method based on thermo-compression ball bonding provided by the invention includes a front step and a back step, and the front step and the back step of the chip packaging method based on thermo-compression ball bonding provided by the invention can be the front step and the back step disclosed in the packaging method of a semiconductor of a chinese patent application 201810431453.8; the packaging method based on the hot-pressed spherical bonding chip provided by the invention comprises the steps of wafer scribing, eutectic welding of the chip and a substrate and wire bonding, and the steps of packaging, post-curing, laser marking, electroplating and forming dispersion;
In particular, the improvement points of the packaging method based on the hot-pressed spherical bonding chip provided by the invention to the prior art are as follows: the chip packaging method provided by the invention comprises the following steps:
1) Dicing the wafer to obtain a plurality of semiconductor bare chips 1 (Die) which can be electrically connected and have fixed patterns;
2) Performing high-temperature eutectic soldering on the semiconductor bare chip 1 and the substrate 2;
the high-temperature eutectic welding can be performed by adopting a eutectic welding method of a semiconductor chip as disclosed in Chinese patent 201511021788.5;
3) As shown in fig. 2, the resulting chip with the base material is wire-bonded to the lead frame 3;
4) As shown in fig. 3, the heat sink 4 is placed under the bonded chip body, and then the whole is packaged with EMC resin material according to the number of outer leads possessed by the four package body cases 5 and the lead frame 3 shown in fig. 4 to 7;
5) Post-curing and laser marking are carried out on the packaged product;
6) And (3) electroplating, forming and dispersing the product obtained in the step (5), and packaging after testing to obtain the chip packaging structure after primary packaging.
Further preferably, the semiconductor bare chip has a size of 5800 μm×4140 μm; 5) The step also comprises cutting off the radiating fins, namely cutting off part of the radiating fins beyond the two ends of the shell of the packaging body; the bending and attaching direction of the outer pins faces to the upper side of the packaging body or faces to the lower side of the packaging body.
After the laser marking in the step 5), selecting to cut off part of the radiating fins beyond the two ends of the shell of the packaging body to cut off, so as to obtain the packaged chip packaging structures of the products 1 and 2 shown in fig. 4-5; when part of the radiating fins beyond the two ends of the shell of the packaging body are cut off, and the bending and attaching direction of the outer pins is selected to face to the upper part of the packaging body during packaging, obtaining a product 1; when the part of the radiating fins beyond the two ends of the shell of the packaging body is cut off, and the bending and attaching direction of the outer pins faces to the lower side of the packaging body during packaging, the product 2 is obtained.
After the laser marking in the step 5), the part of the radiating fins beyond the two ends of the shell of the packaging body is not cut off, so that the packaged chip packaging structure of the product 3 and the product 4 shown in fig. 6-7 can be obtained; when the part of the radiating fins beyond the two ends of the shell of the packaging body is not cut off, and the bending and attaching direction of the outer pins is selected to face to the upper part of the packaging body during packaging, obtaining a product 3; when the part of the radiating fins beyond the two ends of the shell of the packaging body is not cut off, and the bending and attaching direction of the outer pins is selected to face to the lower part of the packaging body during packaging, obtaining a product 4;
As a preferred embodiment of the present invention, as shown in fig. 8, 3) the wire bonding method employed in step (c) includes the steps of:
s1: positioning three-dimensional coordinates of a first bonding point of a j-th arc bonding wire of an i-th bonding pad on a chip
And the three-dimensional coordinates of the second bonding point on the lead frame bonded thereto by the j-th arc bonding wire>
S2: planning a wire bonding path from a first welding point to a second welding point of a j-th arc bonding wire of an i-th welding disc of the chip;
s3: and (2) adopting a wire bonding system to bond a first welding point of a j-th arc bonding wire of an i-th welding disc on the chip to a second welding point on the lead frame by adopting a spherical welding technology to form a j-th arc bonding wire, and adopting the method of planning the wire bonding path of the chip in the S2 step to bond a plurality of chips and the leads on the lead frame.
As another preferred embodiment of the present invention, the step S2 of planning the wire bonding path from the first bonding point to the second bonding point of the j-th arc bonding wire of the i-th bonding pad of the chip includes the steps of:
s21: as shown in fig. 9, the force that the vacuum tensioning device defining the wire bonding system gives the capillary-like bonding head port to the wire pulled to move upwards is the force L of upward movement, and the resistance that the inert gas supply device gives the wire of the capillary-like bonding head port is the resistance R, three-dimensional coordinates of the capillary-like bonding head of the wire bonding system moving in the horizontal coordinate system of the bonding machine are collected in real time 
Movement speed in horizontal coordinate system due to force L and resistance R which are formed after cancellation>
Offset angle +.about.x-axis in horizontal coordinate system>
Offset angle +.about.y-axis in horizontal coordinate system>
Offset angle +.about.z-axis in horizontal coordinate system>
s22: according to the data acquired in the step S21 in real time, calculating the real-time x-axis moving speed of the capillary bonding head of the wire bonding system under the horizontal coordinate system
Real-time y-axis movement speed +.>
And real-time z-axis movement speed->
S23: constructing a pneumatic balance equation in the process of moving the arc bonding wire in real time;
s24: on the basis of the pneumatic balance equation constructed in the step S23, constructing an arc bonding wire path planning model:
s25: adopting a particle swarm optimization algorithm to iteratively optimize the arc bonding wire path planning model constructed in the step S24, and searching the optimal site of the arc bonding wire at the moment t
And optimal offset angles of capillary-shaped bonding heads of the wire bonding system at time t along an x axis, a y axis and a z axis respectively under a horizontal coordinate system +. >
And->
The wire bonding of the present application employs a ball bonding technique of thermocompression bonding, and the capillary-like bonding head in the present application corresponds to the ceramic nozzle in CN111048447a, or is also referred to as a bonding needle in the prior art.
As another preferred embodiment of the present invention, the real-time x-axis movement speed of the capillary-like bonding head of the wire bonding system in the horizontal coordinate system is calculated in step S22
Real-time y-axis movement speed +.>
And real-time z-axis movement speed->
The formulas of (a) are as follows:
as another preferred embodiment of the present invention, the pneumatic equilibrium equation during the real-time movement of the arc-shaped bonding wire constructed in step S23 is as follows:
wherein alpha (t) is the path inclination angle of the jth arc bonding wire of the ith bonding pad under the moving coordinate system at the moment t, m is the mass of the arc bonding wire, g is the gravity acceleration, and is generally 9.81m/s 2 D is the point of the j-th arc bonding wire t of the i-th bonding pad on the arc bonding wire at the moment
The distance from the origin of the horizontal coordinate system,
the offset angular acceleration of the capillary bonding head at the time t under the horizontal coordinate system is the offset angle of the capillary bonding head at the time t under the horizontal coordinate system>
The second derivative with respect to time, 
Is capillary type bondingThe real-time z-axis moving acceleration of the head at t moment under the horizontal coordinate system is the real-time z-axis coordinate +.>
Second derivative with respect to time>
L x Imparting to the vacuum tensioning device a force L on the x-axis component in the moving coordinate system, L, to the capillary-like bond head port with which the wire is drawn to move upward y Imparting to the vacuum tensioning device a y-axis component force, L, in a moving coordinate system, of a force L, in which the capillary-type bond head port leads are pulled to move upward 2 Giving a z-axis component force under a moving coordinate system to a force L for the vacuum tensioning device, wherein the force L is used for pulling a lead wire of a capillary bonding head port to move upwards; f= (L-R) cos α (t).
As another preferred embodiment of the present invention, the calculation formula of the path inclination angle α (t) of the jth arc bonding wire of the ith bonding pad in the moving coordinate system at the time t is as follows:
as another preferred embodiment of the present invention, the optimizing the arc bonding wire path planning model constructed in step S24 by using the particle swarm optimization algorithm in step S25 includes the following steps:
s251: arc bonding wire site at t moment
And the offset angles of the capillary-shaped bonding head at the moment t along the x axis, the y axis and the z axis respectively in a horizontal coordinate system +. >
And->
Construction tTime k generation particle parameter matrix: />
S252: initializing a particle parameter matrix to a known k+1st generation particle update rate
Carrying out updating iteration, and calculating a k+1st generation particle parameter matrix at the moment t:
wherein the k+1st generation particle update rate is known
The following are provided:
wherein,,
the particle update rate of the kth generation of particle parameters at the moment t; omega is the inertial weight of particle update and is used for controlling the balance of particle optimization global search and local search; c 1 Updating a first acceleration factor for the particle; c 2 Updating a second acceleration factor for the ions;
s253: k+1st generation optimal particle parameter matrix at t moment
Updating rules, and judging the k+1st generation particle parameter matrix number at t moment>
Optimal particle parameter matrix of k generation at t moment +.>
If the difference value of the updated function values is larger than the updated optimal point threshold epsilon, if so, the k-th generation of optimal particle parameter matrix at the t moment is adopted +.>
The latest optimal particle parameter matrix of the k+1st generation at the moment t, otherwise, the ion parameter matrix of the k+1st generation at the moment t is +.>
For the latest best particle parameter matrix:
wherein,,
for the k+1st generation of particle parameter matrix at time t, the function value is updated, < >>
The function value is updated for the k-th generation optimal ion parameter matrix at the t moment;
Update function value of k-th generation optimal ion parameter matrix at t moment
The calculation formula of (2) is as follows: />
Namely, calculating k-th generation optimal ion parameter matrix +.>
Rank of (c);
the calculation formula for updating the optimal point threshold epsilon is as follows:
wherein,,
for the k-th generation particle parameter matrix at time t->
Optimal particle parameter matrix of k generation at t moment +.>
Is a difference matrix formed by the respective vector differences>
Is the inverse of the matrix of (a)
Is a rank of (c).
S254: repeating the steps S251-S253 until an optimal particle parameter matrix at the moment t is obtained:
the invention also provides a chip packaging structure of the outline structure shown in fig. 4-7, which is obtained by packaging according to the method.
The invention also provides a chip packaging device adopting the method, as shown in fig. 10, the chip packaging device comprises a wire bonding system and a main control module, wherein the wire bonding system is used for wire bonding, the wire bonding system comprises an X-axis sliding rail, an X-axis screw assembly, an X-axis servo motor, a Y-axis sliding rail, a Y-axis screw assembly, a Y-axis servo motor, a Z-axis sliding rail, a Z-axis screw assembly and a Z-axis servo motor, the wire bonding wire is arranged on the bonding machine, the wire bonding wire is further used for driving a capillary bonding head to perform three-dimensional movement in the horizontal coordinate system, and the wire bonding system further comprises a first servo motor for controlling the wire bonding wire to perform three-dimensional deflection movement in the horizontal coordinate system and an inert gas supply device for supplying inert gas; the X-axis servo motor drives the X-axis sliding rail of the X-axis screw rod assembly to move under the horizontal coordinate system, the Y-axis servo motor drives the Y-axis sliding rail of the Y-axis screw rod assembly to move under the horizontal coordinate system, and the Z-axis servo motor drives the Z-axis sliding rail of the Z-axis screw rod assembly to move under the horizontal coordinate system;
The wire bonding system also comprises a device for collecting three-dimensional coordinates of the wire clamped in the horizontal coordinate system in real time
GPS positioning sensor of (2), three-dimensional corner (+)>
And->
) Is a sensor of angular velocity of (a);
a tension sensor for monitoring the upward movement force L (i.e., the upward tension force of the vacuum tensioner) in real time, and a gas pressure sensor for monitoring the resistance R generated when the inert gas supply device supplies gas in real time;
for monitoring in real time the speed of movement of the capillary-like bonding head in the horizontal coordinate system under the action of the force F formed by the upward movement of the force L and the resistance R after being counteracted
Is a linear velocity sensor of (a);
the upper part of a wire clamp of the wire bonding system is connected with a vacuum tensioning device for tensioning the inner wire of the wire clamp, and the lower part of the wire clamp is provided with a capillary bonding head; the wire bonding system also comprises a firing rod arranged at the lower part of the capillary-shaped bonding head and used for firing the wire led out of the capillary-shaped bonding head when the wire bonding is carried out at the first welding point and the second welding point;
the X-axis servo motor, the Y-axis servo motor, the Z-axis servo motor, the first servo motor, the vacuum tensioning device, the ignition rod, the tension sensor, the gas pressure sensor, the linear velocity sensor and the angular velocity sensor of the wire bonding system are all in electric signal connection with a main control module, and the main control module is used for controlling the wire bonding system by adopting the wire bonding path planned by the wire bonding method of the step S1-step S3 in the chip packaging method.
The wire bonding method provided by the invention can also be stored in a computer medium with a memory function, and the remote control computer with the computer medium can realize the work of the main control module, and the embodiment serial numbers of the invention are only for description and do not represent the advantages and disadvantages of the embodiment. And the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, apparatus, article, or method that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, apparatus, article, or method. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, apparatus, article or method that comprises the element.
From the above description of the embodiments, it will be clear to those skilled in the art that the above-described embodiment method may be implemented by means of software plus a necessary general hardware platform, but of course may also be implemented by means of hardware, but in many cases the former is a preferred embodiment. Based on such understanding, the technical solution of the present invention may be embodied essentially or in a part contributing to the prior art in the form of a software product stored in a storage medium (e.g. ROM/RAM, magnetic disk, optical disk) as above, comprising instructions for causing a terminal device (which may be a mobile phone, a computer, a server, or a network device, etc.) to perform the method of the embodiments of the present invention.
The foregoing description is only of the preferred embodiments of the present invention, and is not intended to limit the scope of the invention, but rather is intended to cover any equivalents of the structures or equivalent processes disclosed herein or in the alternative, which may be employed directly or indirectly in other related arts.
Claims (8)
1. The chip packaging method based on hot-pressing spherical bonding comprises a front step and a back step, wherein the front step comprises wafer scribing, eutectic welding of a chip and a substrate and wire bonding, and the back step comprises packaging, post-curing, laser marking, electroplating and forming dispersion, and is characterized by comprising the following steps:
1) Dicing the wafer to obtain a plurality of semiconductor bare chips which can be electrically connected and have fixed patterns;
2) Performing high-temperature eutectic welding on the semiconductor bare chip and a substrate;
3) Performing wire bonding on the obtained chip with the substrate and the lead frame;
4) Placing the radiating fin below the bonded chip body, and then packaging the whole body by adopting EMC resin materials according to the number of outer pins of the package body shell and the lead frame;
5) Post-curing and laser marking are carried out on the packaged product;
6) Electroplating, forming and dispersing the product obtained in the step 5), and packaging after testing to obtain a chip packaging structure after primary packaging; the wire bonding method adopted in the step 3) comprises the following steps:
s1: locate the first on-chipiFirst of the bonding padsjThree-dimensional coordinates of first solder joint of bar-arc bonding wire
And pass through itjThree-dimensional coordinates of a second bonding point on the lead frame of the bar-arc bonding wire bond +.>
；
S2: planning chip NoiFirst of the bonding padsjFirst of strip arc bonding wireWire bonding paths from the bond pads to the second bond pads;
s3: according to the method for planning the wire bonding path in the step S2, a wire bonding system is adopted to weld the first chip by a ball welding technologyiFirst of the bonding padsjBonding the first bonding point of the lead wire to the second bonding point on the lead frame to form the first bonding pointjBonding wires in an arc shape, and bonding a plurality of chips and the wires on the lead frame by adopting the method of planning the wire bonding path of the chips in the step S2;
the planning chip in the step S2iFirst of the bonding padsjA wire bond path for a first bond pad to a second bond pad of an arcuate wire, comprising the steps of:
S21: the force that a vacuum tensioning device defining a wire bonding system gives a capillary-shaped bonding head port to a wire pulled to move upwards is the upward moving force L, and the resistance that an inert gas supply device gives a capillary-shaped bonding head port to a wire is the resistance R, so that three-dimensional coordinates of the capillary-shaped bonding head of the wire bonding system moving in a horizontal coordinate system of a bonding machine are collected in real time
Motion speed in horizontal coordinate system due to force L of said upward movement and force F formed after said resistance R counteracts>
Offset angle +.>
Offset angle +.>
Offset angle +.>
；
s22: according to the data acquired in the step S21 in real time, calculating the real-time x-axis moving speed of the capillary bonding head of the wire bonding system under a horizontal coordinate system
Real-time y-axis movement speed- >
And real-time z-axis movement speed->
；
S23: constructing a pneumatic balance equation in the process of moving the arc bonding wire in real time;
s24: and (3) constructing an arc bonding wire path planning model on the basis of the pneumatic balance equation constructed in the step S23:
s25: adopting a particle swarm optimization algorithm to iteratively optimize the arc bonding wire path planning model constructed in the step S24, and searching an optimal site of the arc bonding wire at the moment t
And optimal offset angles of capillary bonding heads of the wire bonding system along an x axis, a y axis and a z axis respectively under a horizontal coordinate system at the time t>
、/>
And->
。
2. The die packaging method based on thermocompression ball bonding according to claim 1, wherein the semiconductor bare die has a size of 5800 μm x 4140 μm; the step 5) further comprises cutting off the radiating fins, namely cutting off part of the radiating fins beyond the two ends of the shell of the packaging body; the bending attaching direction of the outer pins faces to the upper side of the packaging body or faces to the lower side of the packaging body.
3. The die packaging method based on thermocompression ball bonding of claim 1, wherein the step S22 calculates a real-time x-axis movement speed of the capillary-like bonding head of the wire bonding system in a horizontal coordinate system 
Real-time y-axis movement speed->
And real-time z-axis movement speed->
The formulas of (a) are as follows:
4. the die packaging method based on thermocompression ball bonding according to claim 1, wherein the pneumatic balance equation during the real-time movement of the arc bonding wire constructed in step S23 is as follows:
wherein,,
is the firstiFirst of the bonding padsjThe path inclination angle of the arc bonding wire under a moving coordinate system at the moment t is m, the mass of the arc bonding wire is m, g is gravity acceleration, and g is 9.81m/s 2 D is the firstiFirst of the bonding padsjThe point of the strip arc bonding wire t on the arc bonding wire at the moment +.>
The distance from the origin of the horizontal coordinate system,
；/>
the offset angular acceleration of the capillary type bonding head at the moment t under a horizontal coordinate system is given; />
Moving acceleration of the capillary type bonding head in real time at t moment under a horizontal coordinate system; />
Giving the vacuum tensioning device a force L to the capillary-like bond head port with which the wire is pulled to move upwards, an x-axis component force in a moving coordinate system, +.>
Giving the vacuum tensioning device a force L of a capillary-like bond head port with which the wire is pulled to move upwards, a y-axis component force in a moving coordinate system, +.>
The force L for the vacuum tensioning device to give the capillary-like bond head port lead wire pulled to move upwards is a z-axis component in a moving coordinate system.
5. The die packaging method based on thermocompression ball bonding of claim 4, wherein the first stepiFirst of the bonding padsjPath inclination angle of bar arc bonding wire under moving coordinate system at t moment
The calculation formula of (2) is as follows:
6. the die packaging method based on thermocompression ball bonding according to claim 1, wherein the optimizing the arc bonding wire path planning model constructed in step S24 by using a particle swarm optimization algorithm in step S25 comprises the following steps:
s251: arc bonding wire site at t moment
And the offset angles of the capillary-shaped bonding head along the x axis, the y axis and the z axis respectively at the time t are +.>
、/>
And->
Constructing a k generation particle parameter matrix at the moment t:
s252: initializing a particle parameter matrix to a known k+1st generation particle update rate
Carrying out updating iteration, and calculating a k+1st generation particle parameter matrix at the moment t:
wherein the known k+1st generation particle update rate
The following are provided:
wherein,,
for the kth generation of particle parameter particles at time tA new rate; />
Inertial weights updated for particles, for controlling the balance of the particle optimization global search and local search; />
Updating a first acceleration factor for the particle; / >
Updating a second acceleration factor for the ions;
s253: k+1st generation optimal particle parameter matrix at t moment
Updating rules, and judging the k+1st generation particle parameter matrix number at t moment>
Optimal particle parameter matrix of k generation at t moment +.>
Whether the difference of the updated function values of (a) is larger than the updated optimal point threshold value +.>
If the particle size is larger than the optimal particle size, the k-th generation optimal particle parameter matrix at the t moment is adopted +>
The latest optimal particle parameter matrix of the k+1st generation at the moment t, otherwise, the ion parameter matrix of the k+1st generation at the moment t is +.>
For the latest best particle parameter matrix:
wherein the method comprises the steps of，
For the k+1st generation of particle parameter matrix at time t, the function value is updated, < >>
The function value is updated for the k-th generation optimal ion parameter matrix at the t moment;
update function value of k-th generation optimal ion parameter matrix at t moment
The calculation formula of (2) is as follows: />
Namely, calculating k-th generation optimal ion parameter matrix +.>
Rank of (c);
updating optimal point thresholds
The calculation formula of (2) is as follows:
wherein,,
for the k-th generation particle parameter matrix at time t->
Optimal particle parameter matrix of k generation at t moment +.>
Is a difference matrix formed by the respective vector differences>
Is the inverse of the matrix of (a)
Rank of (c);
s254: repeating the steps S251-S253 until an optimal particle parameter matrix at the moment t is obtained:
7. a chip packaging structure obtained by packaging according to the method of any one of claims 1 to 6.
8. A chip packaging device adopting the chip packaging method as claimed in any one of claims 1 to 6, wherein the chip packaging device comprises a wire bonding system for wire bonding and a main control module, the wire bonding system comprises an X-axis sliding rail, an X-axis screw assembly, an X-axis servo motor, a Y-axis sliding rail, a Y-axis screw assembly, a Y-axis servo motor, a Z-axis sliding rail, a Z-axis screw assembly and a Z-axis servo motor, which drive a wire to be clamped in a three-dimensional horizontal coordinate system of the wire bonding system for moving, a first servo motor which controls the wire to be clamped in the horizontal coordinate system for three-dimensional deflection movement, and an inert gas supply device for supplying inert gas;
the lead bonding system further comprises a GPS positioning sensor and an angular velocity sensor, wherein the GPS positioning sensor is used for acquiring three-dimensional coordinates of the lead clip in a horizontal coordinate system in real time;
a tension sensor for monitoring the upward movement force L in real time, and a gas pressure sensor for monitoring resistance R generated when the inert gas supply device supplies gas in real time;
a linear velocity sensor for monitoring in real time the movement velocity of the capillary-like bonding head in a horizontal coordinate system under the action of a force F formed by the upward movement force L and the resistance force R after being counteracted;
The upper part of a wire clamp of the wire bonding system is connected with a vacuum tensioning device for tensioning the inner lead of the wire clamp, and the lower part of the wire clamp is provided with a capillary bonding head; the wire bonding system also comprises a firing rod arranged at the lower part of the capillary-shaped bonding head and used for firing a wire led out of the capillary-shaped bonding head when the wire bonding is carried out at the first welding point and the second welding point;
the X-axis servo motor, the Y-axis servo motor, the Z-axis sliding rail, the Z-axis servo motor, the first servo motor, the vacuum tensioning device, the ignition rod, the tension sensor, the gas pressure sensor, the linear velocity sensor and the angular velocity sensor of the wire bonding system are all in electric signal connection with the main control module, and the main control module is used for controlling the wire bonding system by adopting the wire bonding path planned by the wire bonding method of the step S1-the step S3 in the chip packaging method of any one of claims 1-6.
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