CN115954275A - Chip packaging method and device based on hot-pressing spherical bonding and chip packaging structure - Google Patents

Chip packaging method and device based on hot-pressing spherical bonding and chip packaging structure Download PDF

Info

Publication number
CN115954275A
CN115954275A CN202211695249.XA CN202211695249A CN115954275A CN 115954275 A CN115954275 A CN 115954275A CN 202211695249 A CN202211695249 A CN 202211695249A CN 115954275 A CN115954275 A CN 115954275A
Authority
CN
China
Prior art keywords
bonding
lead
axis
chip
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202211695249.XA
Other languages
Chinese (zh)
Other versions
CN115954275B (en
Inventor
袁宏承
邵季铭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuxi Honghu Microelectronics Co ltd
Original Assignee
Wuxi Honghu Microelectronics Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuxi Honghu Microelectronics Co ltd filed Critical Wuxi Honghu Microelectronics Co ltd
Priority to CN202211695249.XA priority Critical patent/CN115954275B/en
Publication of CN115954275A publication Critical patent/CN115954275A/en
Application granted granted Critical
Publication of CN115954275B publication Critical patent/CN115954275B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Wire Bonding (AREA)

Abstract

The invention provides a chip packaging method, a device and a chip packaging structure based on hot-pressing spherical bonding, wherein the method comprises the following steps: scribing the wafer to obtain a plurality of semiconductor bare chips which can be electrically connected and have fixed patterns; carrying out high-temperature eutectic welding on the semiconductor bare chip and the substrate; carrying out lead bonding on the chip with the substrate and the lead frame; placing the radiating fin below the bonded chip body, and packaging the whole body by adopting an EMC resin material; post-curing and laser marking are carried out on the packaged product; and electroplating, forming, dispersing and packaging the obtained product to obtain the chip packaging structure after primary packaging. The invention can avoid the defect that the defective rate is increased in the chip bonding process due to the deviation of the bonding path caused by the unstable power in the bonding process, and simultaneously, the whole lead bonding path is shortest, thereby effectively controlling the quality of chip packaging in the lead bonding process and ensuring the yield of the packaged chips.

Description

Chip packaging method and device based on hot-pressing spherical bonding and chip packaging structure
Technical Field
The invention belongs to the technical field of chip packaging, and particularly relates to a chip packaging method and device based on hot-pressing spherical bonding and a chip packaging structure.
Background
With the development of science and technology, nonvolatile memories are widely used in daily life, and short messages stored in mobile phones, files stored in USB (universal serial bus), program codes in computers and the like which are used by people all adopt the nonvolatile memories. The structure and method of chip package will determine the stability of the chip in use and the quality of connection with other circuits, affecting the performance of the chip. The packaging technique is a technique for packaging an integrated circuit using an insulating material. The chip package has a plurality of functions of providing power, improving signal transmission, assisting heat dissipation, protecting electronic components, constructing a human-computer interface and the like, so the chip package is an essential link in chip manufacturing and utilization.
With the development of memory chips, it is known from moore's law that the density of the chip and its pins are doubled every 18 months. Therefore, the pin count of the memory is also increasing and becoming denser. This creates a significant challenge for the packaging of the chip. Chip packaging is an essential step in the process of using chips, and various novel packaging forms are developed in order to meet the requirements of the market on chip packaging.
For high-density multi-pin array packaging, the problems of packaging warpage, difficult repair and the like exist in the mainstream chip packaging technology and the BGA (solder ball array) packaging technology at present. In the prior art, chip packaging is divided into primary packaging, secondary packaging and tertiary packaging, wherein the primary packaging is to package a chip into a Single Chip Module (SCM) and a multi-chip module (MCM) by using a packaging shell, the secondary packaging is the packaging and assembly of a Printed Circuit Board (PCB), components and parts of the primary packaging are assembled on the Printed Circuit Board (PCB), and the tertiary packaging is to search components of the secondary packaging on the same motherboard, namely, the interconnection of a plug-in interface, the motherboard and the components; in the process of wire bonding, an external air source for providing inert gas (such as nitrogen) outside the connection in a semiconductor device wire bonding device disclosed in chinese patent application CN114843199a is generally required to be used for blowing anti-oxidizing gas to a bonding area, and in the process of bonding, a wire bonding method disclosed in CN111048447A, CN111106021a is generally adopted to bond a chip and an arc-shaped wire bonding wire of a substrate or a lead frame.
Although some technologies consider that the wire connected to the chip or the electrode in the bonding process forms a wire arc under the pressure of the lead clamp, the wire forming the wire arc has certain tension due to the characteristics of the material of the wire, and the tension of the wire and the clamping force of the wire clamp directly influence the bonding quality and the bonding efficiency, so that the lead bonding technology is improved, the technology only considers the influence factor of the tension formed by the bonded lead on a vertical two-dimensional section in the bonding process; however, the influence of the three-dimensional real-time moving coordinate and moving speed in the three-dimensional moving coordinate system of the bonding head on the real-time moving coordinate and moving speed of the bonding head in the three-dimensional moving coordinate system of the bonding head is not considered, and the real-time moving path of the arc-shaped lead finally formed by the bonding head between the first welding point of the chip and the second welding point of the substrate or the lead frame cannot be considered.
Therefore, the prior art ignores that the chip is burnt out due to the short circuit caused by the lap joint of two adjacent leads because of overlong leads or irregular arc shapes in the chip processing and packaging process; or the wire collapse phenomenon is caused by the overlong lead, and the influence of the factor of short circuit with other leads on the yield of the chip package is caused.
Disclosure of Invention
Aiming at the defects, the invention provides a chip packaging method and device based on hot-pressing spherical bonding and a chip packaging structure. The method can avoid the defect that the defective rate is increased in the chip bonding process due to the deviation of the lead path caused by the unstable power of the gas disturbance resistance caused by the vacuum tensioning device and the inert gas at a certain moment or a certain stage in the bonding process, and simultaneously, the method finally ensures that the whole lead bonding path is shortest, and avoids the condition that the lead is collapsed due to overlong lead or overhigh arc height and smaller arc corner after the lead bonding, thereby effectively controlling the quality of chip packaging in the lead bonding process and ensuring the yield of the packaged chip.
The invention provides the following technical scheme: the chip packaging method based on the hot-pressing spherical bonding comprises a front step and a back step, wherein the front step comprises wafer scribing, eutectic welding of a chip and a substrate and lead bonding, the back step comprises packaging, post-curing, laser marking, electroplating and molding dispersion, and the method comprises the following steps:
1) Dicing the wafer to obtain a plurality of electrically connectable semiconductor bare chips with fixed patterns;
2) Carrying out high-temperature eutectic welding on the semiconductor bare chip and the substrate;
3) Carrying out lead bonding on the chip with the substrate and the lead frame;
4) Placing the radiating fin below the bonded chip body, and then packaging the whole body by adopting an EMC resin material according to the number of the outer pins of the packaging body shell and the lead frame;
5) Post-curing and laser marking are carried out on the packaged product;
6) Electroplating, forming and dispersing the product obtained in the step 5), and packaging after testing to obtain a chip packaging structure subjected to primary packaging;
the wire bonding method adopted in the step 3) comprises the following steps:
s1: three-dimensional coordinates of a first bond pad locating a jth curved bond wire of an ith pad on a chip
Figure BDA0004022234340000031
And a three dimensional coordinate ÷ greater than or equal to the second bonding point on the lead frame to which it is bonded by the jth arcuate bonding wire>
Figure BDA0004022234340000032
S2: planning a lead bonding path from a first welding point to a second welding point of a jth arc bonding lead of an ith bonding pad of the chip;
s3: and according to the method for planning the lead bonding path in the step S2, welding a first welding point of a jth arc bonding lead of an ith bonding pad on the chip to a second welding point on a lead frame by adopting a lead bonding system through a ball welding technology to form a jth arc bonding lead, and bonding a plurality of chips and leads on the lead frame by adopting the method for planning the chip lead bonding path in the step S2.
Further, the step S2 of planning a wire bonding path from a first bonding point to a second bonding point of a jth arc-shaped bonding wire of an ith pad of the chip includes the following steps:
s21: defining the force L of the vacuum tensioning device of the wire bonding system for enabling the wire at the port of the capillary bonding head to move upwards in a traction way as the upward moving force, and the resistance force R of the inert gas supply device for enabling the wire at the port of the capillary bonding head to move as the resistance force R, and acquiring the three-dimensional coordinate of the capillary bonding head of the wire bonding system moving under the horizontal coordinate system of the bonding machine in real time
Figure BDA0004022234340000033
A movement speed on a horizontal coordinate system is determined by the action of the force L which moves upwards and the force F formed after the resistance R is counteracted>
Figure BDA0004022234340000034
Offset angle along the x-axis in a horizontal coordinate system->
Figure BDA0004022234340000035
Offset angle in the y-axis in the horizontal coordinate system->
Figure BDA0004022234340000036
Offset angle in the z-axis in the horizontal coordinate system->
Figure BDA0004022234340000037
Figure BDA0004022234340000038
For the jth curved bonding wire of the ith pad, at point on the curved bonding wire at time t, <' > 4>
Figure BDA0004022234340000039
And &>
Figure BDA00040222343400000310
X-axis coordinates, y-axis coordinates and z-axis coordinates of a point of the jth arc bonding lead on the ith bonding pad on the arc bonding lead at the moment t respectively;
s22: calculating the real-time x-axis moving speed of the capillary bonding head of the wire bonding system in a horizontal coordinate system according to the data acquired in real time in the step S21
Figure BDA0004022234340000041
Real-time y-axis movement speed pick>
Figure BDA0004022234340000042
And real-time z-axis movement velocity
Figure BDA0004022234340000043
S23: constructing a pneumatic balance equation in the real-time moving process of the arc bonding lead;
s24: on the basis of the pneumatic balance equation constructed in the step S23, constructing an arc bonding lead path planning model:
Figure BDA0004022234340000044
s25: iteratively optimizing the arc bonding lead path planning model constructed in the step S24 by adopting a particle swarm optimization algorithm, and searching the optimal site of the arc bonding lead at the moment t
Figure BDA0004022234340000045
And the optimal offset angle ^ of the capillary bonding head of the wire bonding system along the x axis, the y axis and the z axis respectively at the time t>
Figure BDA0004022234340000046
And &>
Figure BDA0004022234340000047
Further, the semiconductor bare chip has a size of 5800 μm × 4140 μm; the step 5) also comprises cutting off the radiating fins, namely cutting off partial radiating fins which exceed two ends of the packaging body shell; the bending and attaching direction of the outer pins faces towards the upper part of the packaging body or the lower part of the packaging body.
Further, the real-time x-axis moving speed of the capillary bond head of the wire bonding system in the horizontal coordinate system is calculated in the step S22
Figure BDA0004022234340000048
Real-time y-axis movement speed pick>
Figure BDA0004022234340000049
And a real-time z-axis movement speed pick>
Figure BDA00040222343400000410
Respectively as follows:
Figure BDA00040222343400000411
Figure BDA00040222343400000412
Figure BDA00040222343400000413
further, the pneumatic balance equation in the real-time moving process of the arc-shaped bonding wire constructed in the step S23 is as follows:
Figure BDA00040222343400000414
Figure BDA00040222343400000415
Figure BDA00040222343400000416
wherein α (t) is a path inclination angle of the jth arc bonding lead of the ith bonding pad in a moving coordinate system at the time t, m is a mass of the arc bonding lead, g is a gravitational acceleration generally 9.81m/s 2 D is the point of the jth arc bonding wire of the ith bonding pad on the arc bonding wire at the moment t
Figure BDA0004022234340000051
Distance from the origin of the horizontal coordinate system->
Figure BDA0004022234340000052
The deviation angular acceleration of the capillary bonding head at the t moment under a horizontal coordinate system is obtained; />
Figure BDA0004022234340000053
Real-time z-axis movement acceleration of the capillary bonding head at the time t under a horizontal coordinate system; l is x A force L for giving the vacuum tensioning device to the capillary-shaped bonding head port to be drawn to move upwards is a component force of an x axis under a moving coordinate system, and L is y Imparting capillarity to the vacuum tensioning deviceThe lead at the end of the tubular bonding head is drawn by a force L moving upwards to form a y-axis component force under a moving coordinate system, and the L is z And a force L which is used for giving a lead of the capillary-shaped bonding head port to the vacuum tensioning device to be drawn to move upwards is a z-axis component force under a moving coordinate system.
Further, the calculation formula of the path inclination angle α (t) of the jth arc bonding wire of the ith bonding pad in the moving coordinate system at the time t is as follows:
Figure BDA0004022234340000054
further, in the step S25, a particle swarm optimization algorithm is adopted to optimize the arc-shaped bonding lead path planning model constructed in the step S24, which includes the following steps:
s251: arc-bonding wire sites at time t
Figure BDA0004022234340000055
And at the time t, the deviation angle of the capillary bonding head along the x axis, the y axis and the z axis respectively in a horizontal coordinate system>
Figure BDA0004022234340000056
And &>
Figure BDA0004022234340000057
Constructing a kth generation particle parameter matrix at the t moment:
Figure BDA0004022234340000058
s252: initializing the particle parameter matrix to a known (k + 1) th generation particle update rate
Figure BDA0004022234340000059
Updating and iterating, and calculating a k +1 generation particle parameter matrix at the time t:
Figure BDA00040222343400000510
wherein the known generation k +1 particle update rate
Figure BDA00040222343400000511
The following were used:
Figure BDA00040222343400000512
wherein the content of the first and second substances,
Figure BDA0004022234340000061
the particle update rate of the kth generation particle parameter at the time t; omega is the inertia weight of particle update, which is used for controlling the balance of particle optimization global search and local search; c. C 1 Updating a first acceleration coefficient for the particle; c. C 2 Updating a second acceleration coefficient for the ions;
s253: the k +1 generation optimal particle parameter matrix at the time t
Figure BDA0004022234340000062
Updating the rule, and judging the number of the (k + 1) th generation particle parameter matrix at the time t>
Figure BDA0004022234340000063
And the k-th generation optimum particle parameter matrix at time t>
Figure BDA0004022234340000064
If the difference value of the updated function values is greater than the updated optimal point threshold epsilon, the k-th generation optimal particle parameter matrix is used for determining whether the k-th generation optimal particle parameter matrix is greater than the updated optimal point threshold epsilon or not, and if so, the k-th generation optimal particle parameter matrix is used for determining whether the k-th generation optimal particle parameter matrix is greater than the updated optimal point threshold epsilon>
Figure BDA0004022234340000065
Is the latest optimal particle parameter matrix of the k +1 th generation at the time t, otherwise the ion parameter matrix of the k +1 th generation at the time t is used for->
Figure BDA0004022234340000066
For the latest optimal particle parameter matrix:
Figure BDA0004022234340000067
/>
wherein the content of the first and second substances,
Figure BDA0004022234340000068
for the updated function value of the k +1 th generation particle parameter matrix at time t, < >>
Figure BDA0004022234340000069
Updating a function value of a k-th generation optimal ion parameter matrix at the time t;
updating function value of k-th generation optimal ion parameter matrix at t moment
Figure BDA00040222343400000610
The calculation formula of (a) is as follows: />
Figure BDA00040222343400000611
I.e. the k-th generation optimum ion parameter matrix is calculated at the time t>
Figure BDA00040222343400000612
The rank of (d);
the calculation formula for updating the optimal point threshold epsilon is as follows:
Figure BDA00040222343400000613
wherein the content of the first and second substances,
Figure BDA00040222343400000614
for the kth generation of the particle parameter matrix at time t>
Figure BDA00040222343400000615
And the k-th generation optimum particle parameter matrix at time t>
Figure BDA00040222343400000616
Is formed by the respective corresponding vector difference, the difference matrix->
Figure BDA00040222343400000617
Inverse matrix of
Figure BDA00040222343400000618
Is determined.
S254: repeating the steps S251-S253 until obtaining an optimal particle parameter matrix at the moment t:
Figure BDA00040222343400000619
the invention also provides a chip packaging structure obtained by packaging according to the method.
The invention also provides a chip packaging device adopting the chip packaging method, which comprises a lead bonding system for lead bonding and a main control module, wherein the lead bonding system comprises an X-axis slide rail, an X-axis lead screw component, an X-axis servo motor, a Y-axis slide rail, a Y-axis lead screw component, a Y-axis servo motor, a Z-axis slide rail, a Z-axis lead screw component and a Z-axis servo motor which drive a lead to be clamped in a three-dimensional horizontal coordinate system of the lead bonding system to move;
the lead bonding system also comprises a GPS positioning sensor and an angular velocity sensor of a three-dimensional corner, wherein the GPS positioning sensor is used for acquiring the three-dimensional coordinate of the lead clamped in a horizontal coordinate system in real time;
a tension sensor for monitoring the upward force L in real time, and a gas pressure sensor for monitoring the resistance R generated when the inert gas supply device supplies gas in real time;
the linear velocity sensor is used for monitoring the motion velocity of the capillary bonding head under the action of a force F formed after the upward moving force L and the resistance force R are counteracted in real time;
the upper part of a lead clamp of the lead bonding system is connected with a vacuum tensioning device for tensioning a lead in the lead clamp, and the lower part of the lead clamp is provided with a capillary-shaped bonding head; the wire bonding system also comprises a striking rod arranged at the lower part of the capillary-shaped bonding head, and the striking rod is used for burning a wire led out from the capillary-shaped bonding head when the wire at the first welding point and the second welding point is bonded;
an X-axis servo motor, a Y-axis servo motor, a Z-axis slide rail, a Z servo motor, a first servo motor, a vacuum tensioning device, a fire striking rod, the tension sensor, the gas pressure sensor, the linear velocity sensor and the angular velocity sensor of the lead bonding system are all in electric signal connection with the main control module, and the main control module is used for controlling the lead bonding system by adopting the chip packaging method as the lead bonding path planned by the lead bonding method of the step S1 to the step S3.
The invention has the beneficial effects that:
1. the invention monitors the coordinate and angular velocity of the capillary bonding head in the horizontal coordinate system of the capillary bonding head in the lead bonding system of the bonding machine in real time through a sensor, then converts the coordinate and angular velocity into the real-time coordinate and angular velocity of the capillary bonding head in the moving coordinate system which can rotate three-dimensionally under the lead clamp in real time, monitors the force L of the lead which is pulled to move upwards (the force L moving upwards is given by the vacuum tensioning device) at the port of the capillary bonding head in real time through a tension sensor, monitors the resistance R of inert gas to the bonding head in real time through a gas pressure sensor, and further constructs a pneumatic balance equation in the real-time moving process of the arc bonding lead, wherein the pneumatic balance equation comprises the step of decomposing the force L moving upwards into the component L of the x axis under the moving coordinate system x Y-axis component L y And z-axis component L z And constructing an arc bonding lead path planning model under the constraint of a pneumatic balance equation in the real-time moving process of the arc bonding lead together with the gas resistance R:
Figure BDA0004022234340000081
thereby making the arc shape between the adjacent time pointsThe method comprises the steps of obtaining the shortest lead path at t moment and t +1 moment through bonding, obtaining the shortest whole arc-shaped lead path through bonding, meeting the requirement that upward power and resistance of bonding in the whole bonding process reach stable pneumatic balance, ensuring real-time pneumatic balance in the arc-shaped lead bonding process and the shortest arc-shaped lead path obtained through bonding, and avoiding the defect that the defective rate is increased in the chip bonding process due to lead path deviation caused by unstable bonding path power caused by gas disturbance resistance caused by a vacuum tensioning device and inert gas at a certain moment or a certain stage in the bonding process.
2. The chip packaging method adopted by the invention constructs an arc bonding path minimization model under the constraint of a pneumatic balance equation, and in the optimization process, a particle swarm optimization algorithm is adopted to carry out coordinate point in the bonding lead path at each moment
Figure BDA0004022234340000082
And the bonding machine pulls the bonding head to a three-dimensional corner under the horizontal coordinate system>
Figure BDA0004022234340000083
And
Figure BDA0004022234340000084
constructing a kth generation particle parameter matrix at the t moment: />
Figure BDA0004022234340000085
And then updates the rate ^ er by the custom known particle generation k +1>
Figure BDA0004022234340000086
Figure BDA0004022234340000087
Continuously iterating the example parameter matrix at each moment, and updating the optimal point threshold value epsilon by self definition: />
Figure BDA0004022234340000088
And a decision criterion->
Figure BDA0004022234340000089
Judging whether the particle parameter matrix at the t moment is optimal or not according to the particle swarm optimization iteration result, and judging whether the optimal site of the arc-shaped bonding lead at the t moment is based on the optimal site>
Figure BDA0004022234340000091
And the optimal offset angle ^ of the capillary bonding head of the wire bonding system along the x axis, the y axis and the z axis respectively at the time t>
Figure BDA0004022234340000092
And &>
Figure BDA0004022234340000093
And positioning the bonding site at each moment and the three-dimensional corner of the bonding machine under the horizontal three-dimensional coordinate in real time.
3. The invention adopts a chip packaging method, before the chip and the lead frame are bonded, the semiconductor bare chip and the substrate are welded by adopting an eutectic welding method, the eutectic welding material adopted in the chip packaging is lower than the melting point of a pure component by adopting the step of adding and adopting the eutectic welding, the melting process is simplified, the eutectic alloy has better fluidity than pure metal, and dendritic crystal which obstructs liquid flow can be prevented from forming in solidification, so that the casting performance is improved, casting defects such as segregation and shrinkage cavity are reduced by constant temperature transition (without solidification temperature range) in the eutectic welding process, and the eutectic solidification can obtain various forms of microstructures, especially regularly arranged lamellar or rod-shaped eutectic structures, thereby being superior to a conductive adhesive bonding technology or reflow welding technology which bonds the chip and the substrate in the prior art.
4. The chip packaging structure packaged by the chip packaging method provided by the invention is characterized in that the radiating fin is arranged in the shell formed by EMC resin materials and below the chip body which is eutectic-welded with the base material, so that the radiating performance of the chip packaged by the chip packaging method provided by the invention can be effectively improved, the heat-resisting working time of the PCB caused by overlarge calculated amount in the operation process of the memory device and the logic device of the PCB with the chip is further improved, the condition that the circuit performance is reduced or damaged due to the overlarge calculated amount of the PCB is avoided, the working stability of the components of the PCB is improved, and the components are resistant to severe environment and larger working amount.
5. In the chip packaging method provided by the invention, when the final chip is packaged, the packaging body shells with different appearances formed by four EMC resin materials shown in figures 4-7 can be adopted, and the outer pins and the EMC resin material shells are packaged together, so that the selective combined packaging can be carried out according to different chip packaging shell structures and the number of the outer pins, the applicability of the chip internal structure with the radiating fins and the leads for optimizing the lead bonding path is improved, and the chip packaging method is widely suitable for the requirements of PCB secondary packaging structures with different shell structures and the number of the outer pins.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the embodiments of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The invention will be described in more detail hereinafter on the basis of embodiments and with reference to the drawings. Wherein:
fig. 1 is a schematic flow chart of a chip packaging method based on thermocompression ball bonding according to the present invention.
Fig. 2 is a schematic plan view of a wire bonding in the chip packaging method based on thermocompression ball bonding according to the present invention.
Fig. 3 is an assembly diagram of the chip packaging method based on thermocompression ball bonding in the packaging process.
Fig. 4 is a structural diagram of an external shape of a product 1 packaged by the chip packaging method provided by the invention.
Fig. 5 is a structural diagram of an external shape of a product 2 packaged by the chip packaging method provided by the invention.
Fig. 6 is a structural diagram of an external shape of a product 3 packaged by the chip packaging method provided by the invention.
Fig. 7 is a structural diagram of an external shape of a product 4 packaged by the chip packaging method provided by the invention.
Fig. 8 is a schematic flow chart of a wire bonding method adopted by the chip packaging method provided by the invention.
Fig. 9 shows a horizontal coordinate system and a moving coordinate system in the wire bonding method according to the present invention, and a stress condition of a point of the bonded wire.
Fig. 10 is a schematic structural diagram of a chip packaging apparatus provided in the present invention.
The technical features corresponding to the reference numerals in the figures are as follows:
1. a semiconductor bare chip; 2. a substrate; 3. a lead frame; 4. a heat sink; 5. and (5) packaging the body shell.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
As shown in fig. 1, the method provided by the present invention comprises a front step and a back step, wherein the front step and the back step of the method provided by the present invention can be the front step and the back step disclosed in the method for packaging a semiconductor of 201810431453.8 as a chinese patent application document; the chip packaging method based on the hot-pressing spherical bonding comprises the steps of wafer scribing, eutectic welding of a chip and a substrate and lead bonding, and the steps of packaging, post-curing, laser marking, electroplating and molding dispersion;
particularly, the improvement point of the packaging method based on the thermocompression spherical bonding chip provided by the invention to the prior art is as follows: the chip packaging method provided by the invention comprises the following steps:
1) Dicing the wafer to obtain a plurality of electrically connectable semiconductor bare chips 1 (Die) having a fixed pattern;
2) Carrying out high-temperature eutectic welding on the semiconductor bare chip 1 and the substrate 2;
the high-temperature eutectic welding can be carried out by adopting an eutectic welding method of a semiconductor chip as disclosed in the Chinese patent 201511021788.5;
3) As shown in fig. 2, the resulting chip having the base material is wire-bonded to the lead frame 3;
4) As shown in fig. 3, the heat sink 4 is placed under the bonded chip body, and then the whole is encapsulated with EMC resin material according to the number of outer leads of the four kinds of package cases 5 and lead frames 3 shown in fig. 4-7;
5) Post-curing and laser marking are carried out on the packaged product;
6) And (5) electroplating, forming and dispersing the product obtained in the step 5), and packaging after testing to obtain the chip packaging structure subjected to primary packaging.
Further preferably, the semiconductor bare chip has a size of 5800 μm × 4140 μm; 5) The method also comprises the steps of cutting off the radiating fins, namely cutting off partial radiating fins which exceed two ends of the packaging body shell; the bending and bonding direction of the outer pins faces to the upper part of the packaging body or faces to the lower part of the packaging body.
After the laser marking in the step 5) is carried out, cutting off parts of the radiating fins which exceed two ends of the packaging body shell to obtain the packaged chip packaging structures of the product 1 and the product 2 shown in the figures 4-5; when partial radiating fins exceeding two ends of the packaging body shell are cut off selectively, and the bending and attaching direction of the outer pins faces to the upper part of the packaging body during packaging, a product 1 is obtained; and when the part of the radiating fins exceeding the two ends of the packaging body shell is cut off and the bending and attaching direction of the outer pins is towards the lower part of the packaging body during packaging, obtaining a product 2.
After the laser marking in the step 5) is carried out, cutting off parts of the radiating fins which exceed two ends of the packaging body shell without selection can obtain packaged chip packaging structures of products 3 and 4 shown in the figures 6-7; when the part of the radiating fins beyond the two ends of the packaging body shell is not selected to be cut off, and the bending and attaching direction of the outer pins is selected to face the upper part of the packaging body during packaging, a product 3 is obtained; when the part of the radiating fins exceeding the two ends of the packaging body shell is not cut off selectively, and the bending and attaching direction of the outer pins is towards the lower part of the packaging body during packaging, a product 4 is obtained;
as a preferred embodiment of the present invention, as shown in fig. 8, the wire bonding method adopted in step 3) includes the steps of:
s1: three-dimensional coordinates of a first bond pad locating a jth curved bond wire of an ith pad on a chip
Figure BDA0004022234340000111
And a three dimensional coordinate ÷ greater than or equal to the second bonding point on the lead frame to which it is bonded by the jth arcuate bonding wire>
Figure BDA0004022234340000112
S2: planning a lead bonding path from a first welding point to a second welding point of a jth arc bonding lead of an ith bonding pad of the chip;
s3: and (3) planning a lead bonding path according to the step S2, welding a first welding point of a jth arc bonding lead of an ith bonding pad on the chip to a second welding point on a lead frame by adopting a lead bonding system through a ball welding technology to form a jth arc bonding lead, and bonding a plurality of chips and leads on the lead frame by adopting the step S2 to plan the chip lead bonding path.
As another preferred embodiment of the present invention, the step S2 of planning a wire bonding path from a first bonding point to a second bonding point of a jth arc-shaped bonding wire of an ith pad of the chip includes the following steps:
s21: as shown in fig. 9, defining the force that the vacuum tensioning device of the wire bonding system gives the wire at the capillary-shaped bonding head port to be pulled to move upwards as the upward moving force L, and the resistance force that the inert gas supply device gives the wire at the capillary-shaped bonding head port as the resistance force R, and acquiring the three-dimensional coordinate system of the capillary-shaped bonding head of the wire bonding system moving under the horizontal coordinate system of the bonding machine in real time
Figure BDA0004022234340000121
The moving speed on the horizontal coordinate system is greater or less than or equal to the moving speed on the horizontal coordinate system under the action of the force F formed after the upward moving force L and the resistance force R are counteracted>
Figure BDA0004022234340000122
Offset angle in the horizontal coordinate system along the x-axis>
Figure BDA0004022234340000123
Offset angle in the y-axis in the horizontal coordinate system->
Figure BDA0004022234340000124
Offset angle in the z-axis in the horizontal coordinate system->
Figure BDA0004022234340000125
Figure BDA0004022234340000126
For the jth curved bonding wire of the ith pad, at point on the curved bonding wire at time t, <' > 4>
Figure BDA0004022234340000127
And &>
Figure BDA0004022234340000128
The jth arc bonding wire of the ith bonding pad is positioned in arc at time tX-axis coordinates, y-axis coordinates and z-axis coordinates of a site on the wire bonds in a horizontal coordinate system;
s22: according to the data acquired in real time in the step S21, the real-time x-axis moving speed of the capillary bonding head of the wire bonding system in the horizontal coordinate system is calculated
Figure BDA0004022234340000129
Real-time y-axis movement speed pick>
Figure BDA00040222343400001210
And a real-time z-axis movement speed pick>
Figure BDA00040222343400001211
S23: constructing a pneumatic balance equation in the real-time moving process of the arc-shaped bonding lead;
s24: on the basis of the pneumatic balance equation established in the step S23, an arc bonding lead path planning model is established:
Figure BDA00040222343400001212
s25: adopting a particle swarm optimization algorithm, iteratively optimizing the arc bonding lead path planning model constructed in the step S24, and searching the optimal site of the arc bonding lead at the moment t
Figure BDA0004022234340000131
And the optimal deviation angle (R) of the capillary bonding head of the wire bonding system along the x-axis, the y-axis and the z-axis respectively at the time t>
Figure BDA0004022234340000132
And &>
Figure BDA0004022234340000133
The wire bonding of this application adopts the ball bonding technique of thermocompression bonding, and capillary bonding head in this application is promptly equivalent to the porcelain mouth in CN111048447A, or prior art also called it as the bonding pin.
As another preferred embodiment of the present invention, the real-time x-axis moving speed of the capillary bond head of the wire bonding system in the horizontal coordinate system is calculated in step S22
Figure BDA0004022234340000134
Real-time y-axis movement speed pick>
Figure BDA0004022234340000135
And a real-time z-axis movement speed pick>
Figure BDA0004022234340000136
Respectively as follows:
Figure BDA0004022234340000137
Figure BDA0004022234340000138
Figure BDA0004022234340000139
as another preferred embodiment of the present invention, the pneumatic balance equation during the real-time movement of the arc-shaped bonding wire constructed in the step S23 is as follows:
Figure BDA00040222343400001310
Figure BDA00040222343400001311
Figure BDA00040222343400001312
wherein α (t) is a path inclination angle of the jth arc bonding lead of the ith bonding pad in a moving coordinate system at the time t, m is a mass of the arc bonding lead, and g is a gravitational acceleration generally 9.81m/s 2 D is the point of the jth arc bonding wire of the ith bonding pad on the arc bonding wire at the moment t
Figure BDA00040222343400001313
The distance from the origin of the horizontal coordinate system,
Figure BDA00040222343400001314
the deviation angular acceleration of the capillary bonding head at the time t under the horizontal coordinate system is the deviation angle ^ at the time t under the horizontal coordinate system>
Figure BDA00040222343400001315
The second derivative with respect to time is,
Figure BDA00040222343400001316
the real-time z-axis moving acceleration of the capillary bonding head at the t moment in the horizontal coordinate system is the real-time z-axis coordinate->
Figure BDA0004022234340000141
Second derivative with respect to time, is greater than or equal to>
Figure BDA0004022234340000142
L x A force L for providing the vacuum tensioning device with the lead of the capillary-shaped bonding head port to be pulled to move upwards is a component force of an x axis under a moving coordinate system, and L y The force L for providing the vacuum tensioning device with the lead of the capillary-shaped bonding head port to be pulled to move upwards is the y-axis component force under the moving coordinate system, and L 2 A force L for providing a vacuum tensioning device to the capillary-shaped bonding head port to pull the lead to move upwards is a z-axis component force under a moving coordinate system; f = (L-R) cos α (t).
As another preferred embodiment of the present invention, the calculation formula of the path inclination angle α (t) of the jth arc bonding wire of the ith bonding pad in the coordinate system of the movement at the time t is as follows:
Figure BDA0004022234340000143
as another preferred embodiment of the present invention, the step S25 of optimizing the planned model of the arc-shaped bonding wire path constructed in the step S24 by using a particle swarm optimization algorithm comprises the following steps:
s251: arc-shaped bonding wire site at time t
Figure BDA0004022234340000144
And the offset angle of the capillary bonding head along the x axis, the y axis and the z axis respectively at the time t>
Figure BDA0004022234340000145
And &>
Figure BDA0004022234340000146
Constructing a kth generation particle parameter matrix at the t moment:
Figure BDA0004022234340000147
/>
s252: initializing the particle parameter matrix to a known (k + 1) th generation particle update rate
Figure BDA0004022234340000148
Updating and iterating, and calculating a k +1 th generation particle parameter matrix at the t moment:
Figure BDA0004022234340000149
wherein the k +1 th generation particle update rate is known
Figure BDA00040222343400001410
The following were used:
Figure BDA00040222343400001411
wherein the content of the first and second substances,
Figure BDA00040222343400001412
updating the particle parameter particle update rate of the kth generation at the moment t; omega is the inertia weight of particle update, which is used for controlling the balance of particle optimization global search and local search; c. C 1 Updating a first acceleration coefficient for the particle; c. C 2 Updating a second acceleration coefficient for the ions;
s253: the k +1 generation optimal particle parameter matrix at the t moment
Figure BDA0004022234340000151
Updating rules, and judging the number of the (k + 1) th generation particle parameter matrix at the time t>
Figure BDA0004022234340000152
And the k-th generation optimum particle parameter matrix at time t>
Figure BDA0004022234340000153
If the difference value of the updated function values is greater than the updated optimal point threshold epsilon, the k-th generation optimal particle parameter matrix is used for determining whether the k-th generation optimal particle parameter matrix is greater than the updated optimal point threshold epsilon or not, and if so, the k-th generation optimal particle parameter matrix is used for determining whether the k-th generation optimal particle parameter matrix is greater than the updated optimal point threshold epsilon>
Figure BDA0004022234340000154
Is the latest optimal particle parameter matrix of the k +1 th generation at the time t, otherwise the ion parameter matrix of the k +1 th generation at the time t is used for->
Figure BDA0004022234340000155
For the latest optimal particle parameter matrix:
Figure BDA0004022234340000156
wherein, the first and the second end of the pipe are connected with each other,
Figure BDA0004022234340000157
an updated function value for the (k + 1) th generation particle parameter matrix at time t>
Figure BDA0004022234340000158
Updating a function value of a kth generation optimal ion parameter matrix at the time t;
updating function value of k-th generation optimal ion parameter matrix at t moment
Figure BDA0004022234340000159
The calculation formula of (a) is as follows: />
Figure BDA00040222343400001510
I.e. the k-th generation optimum ion parameter matrix is calculated at the time t>
Figure BDA00040222343400001511
The rank of (d);
the calculation formula for updating the optimal point threshold epsilon is as follows:
Figure BDA00040222343400001512
wherein the content of the first and second substances,
Figure BDA00040222343400001513
for the kth generation of particle parameter matrix at time t>
Figure BDA00040222343400001514
And the k-th generation optimum particle parameter matrix at time t>
Figure BDA00040222343400001515
In a respective corresponding vector difference of->
Figure BDA00040222343400001516
Inverse matrix of (2)
Figure BDA00040222343400001517
Is determined.
S254: repeating the steps S251-S253 until obtaining the optimal particle parameter matrix at the moment t:
Figure BDA00040222343400001518
the invention also provides a chip packaging structure of the outline structure shown in the figures 4-7 and obtained by packaging according to the method.
The invention also provides a chip packaging device adopting the method, as shown in fig. 10, the chip packaging device comprises a lead bonding system for lead bonding and a main control module, the lead bonding system comprises an X-axis slide rail, an X-axis lead screw component, an X-axis servo motor, a Y-axis slide rail, a Y-axis lead screw component, a Y-axis servo motor, a Z-axis slide rail, a Z-axis lead screw component and a Z-axis servo motor, which drive leads to be clamped in a three-dimensional horizontal coordinate system of the lead bonding system (equivalent to a bonder in CN 111048447A) to move, the lead clamps are arranged on the bonder, the lead clamps further drive a capillary-shaped bonding head to perform three-dimensional movement in the horizontal coordinate system, the lead bonding system further comprises a first servo motor and an inert gas supply device, wherein the first servo motor controls the leads to be clamped in the horizontal coordinate system to perform three-dimensional deflection movement, and the inert gas supply device is used for supplying inert gas; an X-axis servo motor drives an X-axis slide rail of the X-axis lead screw component to move under a horizontal coordinate system, a Y-axis servo motor drives a Y-axis slide rail of the Y-axis lead screw component under the horizontal coordinate system to move, and a Z-axis servo motor drives a Z-axis slide rail of the Z-axis lead screw component under the horizontal coordinate system to move;
the wire bonding system also comprises a device for acquiring the three-dimensional coordinates of the wire clamped in the horizontal coordinate system in real time
Figure BDA0004022234340000161
In a three-dimensional corner (or in a corner) of a vehicle>
Figure BDA0004022234340000162
And &>
Figure BDA0004022234340000163
) An angular velocity sensor of (1);
a tension sensor for monitoring the upward moving force L (i.e., the upward pulling force of the vacuum tensioning device) in real time, and a gas pressure sensor for monitoring the resistance R generated when the inert gas supply device supplies gas in real time;
is used for monitoring the motion speed of the capillary bonding head in a horizontal coordinate system under the action of a force F formed after the upward moving force L and the resistance force R are counteracted in real time
Figure BDA0004022234340000164
The linear velocity sensor of (1);
the upper part of a lead clamp of the lead bonding system is connected with a vacuum tensioning device for tensioning the lead in the lead clamp, and the lower part of the lead clamp is provided with a capillary bonding head; the wire bonding system also comprises a sparking rod arranged at the lower part of the capillary-shaped bonding head, and the sparking rod is used for burning a wire led out from the capillary-shaped bonding head when the wire at the first welding point and the second welding point is bonded;
an X-axis servo motor, a Y-axis servo motor, a Z servo motor, a first servo motor, a vacuum tensioning device, a sparking rod, a tension sensor, a gas pressure sensor, a linear velocity sensor and an angular velocity sensor of the lead bonding system are all in electric signal connection with a main control module, and the main control module is used for controlling the lead bonding system by adopting a lead bonding path planned by the lead bonding method from the step S1 to the step S3 in the chip packaging method.
The wire bonding method provided by the present invention can also be stored in a computer medium with a memory function, and a remote control computer with the computer medium can implement the operation of the main control module. And the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, apparatus, article, or method that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, apparatus, article, or method. Without further limitation, an element defined by the phrase "comprising a … …" does not exclude the presence of another identical element in a process, apparatus, article, or method that comprises the element.
Through the above description of the embodiments, those skilled in the art will clearly understand that the method of the above embodiments can be implemented by software plus a necessary general hardware platform, and certainly can also be implemented by hardware, but in many cases, the former is a better implementation manner. Based on such understanding, the technical solutions of the present invention may be embodied in the form of a software product, which is stored in a storage medium (such as ROM/RAM, magnetic disk, optical disk) and includes instructions for enabling a terminal device (such as a mobile phone, a computer, a server, or a network device) to execute the method according to the embodiments of the present invention.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.

Claims (9)

1. The chip packaging method based on the hot-pressing spherical bonding comprises a front step and a back step, wherein the front step comprises wafer scribing, eutectic welding of a chip and a substrate and lead bonding, and the back step comprises packaging, post-curing, laser marking, electroplating and molding dispersion, and is characterized by comprising the following steps:
1) Scribing the wafer to obtain a plurality of semiconductor bare chips which can be electrically connected and have fixed patterns;
2) Carrying out high-temperature eutectic welding on the semiconductor bare chip and the substrate;
3) Carrying out lead bonding on the chip with the substrate and the lead frame;
4) Placing the radiating fin below the bonded chip body, and then packaging the whole body by adopting an EMC resin material according to the number of the outer pins of the packaging body shell and the lead frame;
5) Post-curing and laser marking are carried out on the packaged product;
6) Electroplating, forming and dispersing the product obtained in the step 5), and packaging after testing to obtain a chip packaging structure subjected to primary packaging;
the lead bonding method adopted in the step 3) comprises the following steps:
s1: three-dimensional coordinates of a first bond pad locating a jth curved bond wire of an ith pad on a chip
Figure FDA0004022234330000011
And the three-dimensional coordinates of a second welding point on the lead frame which is bonded with the jth arc-shaped bonding wire through the jth arc-shaped bonding wire
Figure FDA0004022234330000012
S2: planning a lead bonding path from a first welding point to a second welding point of a jth arc bonding lead of an ith bonding pad of the chip;
s3: and according to the method for planning the lead bonding path in the step S2, welding a first welding point of a jth arc bonding lead of an ith bonding pad on the chip to a second welding point on a lead frame by adopting a lead bonding system through a ball welding technology to form a jth arc bonding lead, and bonding a plurality of chips and leads on the lead frame by adopting the method for planning the chip lead bonding path in the step S2.
2. The method for packaging a chip based on thermocompression ball bonding according to claim 1, wherein the step S2 of planning a wire bonding path from a first bonding point to a second bonding point of a jth arc bonding wire of an ith bonding pad of the chip comprises the following steps:
s21: the force that the vacuum tensioning device defining the wire bonding system imparts to the capillary-shaped bond head port that the wire is pulled to move upward is an upward moving force L, and an inert gas is suppliedThe resistance given to the device for the lead of the capillary bonding head port is resistance R, and the three-dimensional coordinate of the capillary bonding head of the lead bonding system moving under the horizontal coordinate system of the bonding machine is acquired in real time
Figure FDA0004022234330000013
A movement speed on a horizontal coordinate system is determined by the action of the force L which moves upwards and the force F formed after the resistance R is counteracted>
Figure FDA0004022234330000021
Offset angle along the x-axis in a horizontal coordinate system->
Figure FDA0004022234330000022
Offset angle in the y-axis in the horizontal coordinate system->
Figure FDA0004022234330000023
Offset angle in the z-axis in the horizontal coordinate system->
Figure FDA0004022234330000024
Figure FDA0004022234330000025
The jth arc bonding wire t for the ith pad is at a point on the arc bonding wire at time t,
Figure FDA0004022234330000026
and &>
Figure FDA0004022234330000027
X-axis coordinates, y-axis coordinates and z-axis coordinates of a point of the jth arc bonding lead on the ith bonding pad on the arc bonding lead at the moment t respectively;
s22: calculating the horizontal coordinate system of the capillary bonding head of the wire bonding system according to the data acquired in real time in the step S21Real time x-axis speed of movement
Figure FDA0004022234330000028
Real-time y-axis movement speed pick>
Figure FDA0004022234330000029
And a real-time z-axis movement speed pick>
Figure FDA00040222343300000210
S23: constructing a pneumatic balance equation in the real-time moving process of the arc bonding lead;
s24: on the basis of the pneumatic balance equation constructed in the step S23, constructing an arc bonding lead path planning model:
Figure FDA00040222343300000211
s25: iteratively optimizing the arc bonding lead path planning model constructed in the step S24 by adopting a particle swarm optimization algorithm, and searching the optimal site of the arc bonding lead at the moment t
Figure FDA00040222343300000212
And at time t, the optimal deviation angle (R & ltR & gt) of the capillary bonding head of the wire bonding system along the x axis, the y axis and the z axis respectively under a horizontal coordinate system>
Figure FDA00040222343300000213
And &>
Figure FDA00040222343300000214
3. The thermocompression ball bonding based chip packaging method of claim 1, wherein the semiconductor bare chip has dimensions of 5800 μ ι η x 4140 μ ι η; the step 5) also comprises cutting off the radiating fins, namely cutting off partial radiating fins which exceed two ends of the packaging body shell; the bending and attaching direction of the outer pins faces towards the upper part of the packaging body or the lower part of the packaging body.
4. The method for packaging a chip based on thermocompression ball bonding as recited in claim 1, wherein the step S22 is performed to calculate a real-time x-axis moving speed of a capillary bond head of the wire bonding system in a horizontal coordinate system
Figure FDA00040222343300000215
Real-time y-axis movement speed pick>
Figure FDA00040222343300000216
And a real-time z-axis movement speed pick>
Figure FDA00040222343300000217
Respectively as follows:
Figure FDA0004022234330000031
Figure FDA0004022234330000032
Figure FDA0004022234330000033
5. the method for packaging a chip based on thermocompression ball bonding according to claim 1, wherein the pneumatic balance equation in the real-time moving process of the arc bonding wire constructed in the step S23 is as follows:
Figure FDA0004022234330000034
Figure FDA0004022234330000035
Figure FDA0004022234330000036
wherein α (t) is a path inclination angle of the jth arc bonding lead of the ith bonding pad in a moving coordinate system at the time t, m is a mass of the arc bonding lead, g is a gravitational acceleration generally 9.81m/s 2 D is the point of the jth arc bonding wire of the ith bonding pad on the arc bonding wire at the moment t
Figure FDA0004022234330000037
The distance from the origin of the horizontal coordinate system,
Figure FDA0004022234330000038
the deviation angular acceleration of the capillary bonding head at the t moment under a horizontal coordinate system is obtained; />
Figure FDA0004022234330000039
Real-time z-axis movement acceleration of the capillary bonding head at the time t under a horizontal coordinate system; l is x A force L for giving the vacuum tensioning device to the capillary-shaped bonding head port to be drawn to move upwards is a component force of an x axis under a moving coordinate system, and L is y A force L for giving the vacuum tensioning device to the capillary-shaped bonding head port to be drawn to move upwards is a y-axis component force under a moving coordinate system, and L is z And a force L which is used for giving a lead of the capillary-shaped bonding head port to the vacuum tensioning device to be drawn to move upwards is a z-axis component force under a moving coordinate system.
6. The method for packaging a chip based on thermocompression ball bonding as recited in claim 4, wherein the path tilt α (t) of the jth arc bonding wire of the ith bonding pad in the coordinate system moving at time t is calculated as follows:
Figure FDA00040222343300000310
7. the method for packaging a chip based on thermocompression ball bonding according to claim 1, wherein the step S25 is performed by optimizing the arc-shaped bonding lead path planning model constructed in the step S24 by using a particle swarm optimization algorithm, and the method comprises the following steps:
s251: arc-bonding wire sites at time t
Figure FDA0004022234330000041
And the offset angle ^ of the capillary bonding head along the x axis, the y axis and the z axis respectively at the time t>
Figure FDA0004022234330000042
And &>
Figure FDA0004022234330000043
Constructing a kth generation particle parameter matrix at the t moment:
Figure FDA0004022234330000044
s252: initializing the particle parameter matrix to a known (k + 1) th generation particle update rate
Figure FDA0004022234330000045
Updating and iterating, and calculating a k +1 generation particle parameter matrix at the time t:
Figure FDA0004022234330000046
wherein the known generation k +1Particle update rate
Figure FDA0004022234330000047
The following were used:
Figure FDA0004022234330000048
wherein, the first and the second end of the pipe are connected with each other,
Figure FDA0004022234330000049
the particle update rate of the kth generation particle parameter at the time t; omega is the inertia weight of particle update, which is used for controlling the balance of particle optimization global search and local search; c. C 1 Updating a first acceleration coefficient for the particle; c. C 2 Updating a second acceleration coefficient for the ions;
s253: the k +1 generation optimal particle parameter matrix at the t moment
Figure FDA00040222343300000410
Updating the rule, and judging the number of the (k + 1) th generation particle parameter matrix at the time t>
Figure FDA00040222343300000411
And the k-th generation optimum particle parameter matrix at time t>
Figure FDA00040222343300000412
If the difference value of the updated function values is greater than the updated optimal point threshold epsilon, the k-th generation optimal particle parameter matrix is used for determining whether the k-th generation optimal particle parameter matrix is greater than the updated optimal point threshold epsilon or not, and if so, the k-th generation optimal particle parameter matrix is used for determining whether the k-th generation optimal particle parameter matrix is greater than the updated optimal point threshold epsilon>
Figure FDA00040222343300000413
Is the latest optimal particle parameter matrix of the k +1 th generation at the time t, otherwise the ion parameter matrix of the k +1 th generation at the time t is used for->
Figure FDA00040222343300000414
For the latest optimal particle parameter matrix:
Figure FDA00040222343300000415
wherein the content of the first and second substances,
Figure FDA00040222343300000416
an updated function value for the (k + 1) th generation particle parameter matrix at time t>
Figure FDA00040222343300000417
Updating a function value of a kth generation optimal ion parameter matrix at the time t;
updating function value of k-th generation optimal ion parameter matrix at t moment
Figure FDA0004022234330000051
The calculation formula of (a) is as follows: />
Figure FDA0004022234330000052
I.e. calculating the k-th generation optimum ion parameter matrix at time t>
Figure FDA0004022234330000053
The rank of (d);
the calculation formula for updating the optimal point threshold epsilon is as follows:
Figure FDA0004022234330000054
wherein the content of the first and second substances,
Figure FDA0004022234330000055
for the kth generation of the particle parameter matrix at time t>
Figure FDA0004022234330000056
And the k-th generation optimum particle parameter matrix at time t>
Figure FDA0004022234330000057
Is formed by the respective corresponding vector difference, the difference matrix->
Figure FDA0004022234330000058
In an inverse matrix>
Figure FDA0004022234330000059
The rank of (d);
s254: repeating the steps S251-S253 until an optimal particle parameter matrix at the time t is obtained:
Figure FDA00040222343300000510
8. a chip package structure packaged according to the method of any one of claims 1 to 7.
9. A chip packaging apparatus using the chip packaging method according to any one of claims 1 to 7, wherein the chip packaging apparatus comprises a wire bonding system for wire bonding, the wire bonding system comprising an X-axis slide rail, an X-axis lead screw assembly, an X-axis servo motor, a Y-axis slide rail, a Y-axis lead screw assembly, a Y-axis servo motor, a Z-axis slide rail, a Z-axis lead screw assembly and a Z-axis servo motor for moving a lead clamp in a three-dimensional horizontal coordinate system of the wire bonding system, a first servo motor for controlling the lead clamp to perform three-dimensional deflection motion in the horizontal coordinate system, and an inert gas supply device for supplying inert gas;
the lead bonding system also comprises a GPS positioning sensor and an angular velocity sensor of a three-dimensional corner, wherein the GPS positioning sensor is used for acquiring the three-dimensional coordinate of the lead clamped in a horizontal coordinate system in real time;
a tension sensor for monitoring the upward force L in real time, and a gas pressure sensor for monitoring the resistance R generated when the inert gas supply device supplies gas in real time;
the linear velocity sensor is used for monitoring the motion velocity of the capillary-shaped bonding head under the action of a horizontal coordinate system under the action of a force F formed after the upward moving force L and the resistance force R are counteracted in real time;
the upper part of a lead clamp of the lead bonding system is connected with a vacuum tensioning device for tensioning a lead in the lead clamp, and the lower part of the lead clamp is provided with a capillary bonding head; the wire bonding system also comprises a sparking rod arranged at the lower part of the capillary bonding head and used for burning a lead led out from the capillary bonding head when the first welding point and the second welding point are used for wire bonding;
an X-axis servo motor, a Y-axis servo motor, a Z-axis sliding rail, a Z servo motor, a first servo motor, a vacuum tensioning device, a fire rod, the tension sensor, the gas pressure sensor, the linear velocity sensor and the angular velocity sensor of the wire bonding system are all in electric signal connection with the main control module, and the main control module is used for controlling the wire bonding system by adopting a wire bonding path planned by the wire bonding method from the step S1 to the step S3 in the chip packaging method according to any one of claims 1 to 6.
CN202211695249.XA 2022-12-28 2022-12-28 Chip packaging method and device based on hot-pressing spherical bonding and chip packaging structure Active CN115954275B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211695249.XA CN115954275B (en) 2022-12-28 2022-12-28 Chip packaging method and device based on hot-pressing spherical bonding and chip packaging structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211695249.XA CN115954275B (en) 2022-12-28 2022-12-28 Chip packaging method and device based on hot-pressing spherical bonding and chip packaging structure

Publications (2)

Publication Number Publication Date
CN115954275A true CN115954275A (en) 2023-04-11
CN115954275B CN115954275B (en) 2023-07-14

Family

ID=85897147

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211695249.XA Active CN115954275B (en) 2022-12-28 2022-12-28 Chip packaging method and device based on hot-pressing spherical bonding and chip packaging structure

Country Status (1)

Country Link
CN (1) CN115954275B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117116815A (en) * 2023-10-23 2023-11-24 常熟理工学院 Chip mounting optimization method and system based on improved particle swarm optimization

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006090196A1 (en) * 2005-02-23 2006-08-31 Infineon Technologies Ag Rectangular bond pad and method of wire bonding the same with an elongated ball bond
CN105489515A (en) * 2015-12-30 2016-04-13 桂林斯壮微电子有限责任公司 Eutectic soldering method for semiconductor chip
CN108648999A (en) * 2018-05-08 2018-10-12 广西桂芯半导体科技有限公司 Method for packing semiconductor
CN111048447A (en) * 2019-11-28 2020-04-21 南京微毫科技有限公司 Wire leading mechanism of bonding machine and working method
CN111106021A (en) * 2019-12-30 2020-05-05 重庆四联光电科技有限公司 Semiconductor bonding process based on silver-based bonding wire
WO2020240674A1 (en) * 2019-05-27 2020-12-03 株式会社新川 Wire bonding device, method for manufacture of semiconductor device, and semiconductor device
US20210358873A1 (en) * 2020-05-14 2021-11-18 Samsung Electronics Co., Ltd. Wire bonding method for semiconductor package

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006090196A1 (en) * 2005-02-23 2006-08-31 Infineon Technologies Ag Rectangular bond pad and method of wire bonding the same with an elongated ball bond
CN105489515A (en) * 2015-12-30 2016-04-13 桂林斯壮微电子有限责任公司 Eutectic soldering method for semiconductor chip
CN108648999A (en) * 2018-05-08 2018-10-12 广西桂芯半导体科技有限公司 Method for packing semiconductor
WO2020240674A1 (en) * 2019-05-27 2020-12-03 株式会社新川 Wire bonding device, method for manufacture of semiconductor device, and semiconductor device
CN111048447A (en) * 2019-11-28 2020-04-21 南京微毫科技有限公司 Wire leading mechanism of bonding machine and working method
CN111106021A (en) * 2019-12-30 2020-05-05 重庆四联光电科技有限公司 Semiconductor bonding process based on silver-based bonding wire
US20210358873A1 (en) * 2020-05-14 2021-11-18 Samsung Electronics Co., Ltd. Wire bonding method for semiconductor package

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117116815A (en) * 2023-10-23 2023-11-24 常熟理工学院 Chip mounting optimization method and system based on improved particle swarm optimization
CN117116815B (en) * 2023-10-23 2024-01-23 常熟理工学院 Chip mounting optimization method and system based on improved particle swarm optimization

Also Published As

Publication number Publication date
CN115954275B (en) 2023-07-14

Similar Documents

Publication Publication Date Title
KR101571457B1 (en) Method for package-on-package assembly with wire bonds to encapsulation surface
US7190060B1 (en) Three-dimensional stacked semiconductor package device with bent and flat leads and method of making same
US6778406B2 (en) Resilient contact structures for interconnecting electronic devices
US7446419B1 (en) Semiconductor chip assembly with welded metal pillar of stacked metal balls
KR102336343B1 (en) Systems and methods for determining and adjusting a level of parallelism related to bonding of semiconductor elements
CN115954275A (en) Chip packaging method and device based on hot-pressing spherical bonding and chip packaging structure
US20100065963A1 (en) Method of wirebonding that utilizes a gas flow within a capillary from which a wire is played out
JP2003197669A (en) Bonding method and bonding apparatus
CN105826458A (en) Preparation method of DPC ceramic substrate with metal surrounding dam
CN1148793C (en) Film carrier tape, tape carrier semiconductor device assembly, semiconductor device, its manufacturing method, package substrate, and electronic appliance
CN210692492U (en) Vertical routing equipment
US20190221538A1 (en) Semiconductor structure
CN1705089A (en) Method for back-repairing pin packaging free device
Jinhai Research on the application of big data ecology in college physical education and training
CN214336701U (en) Semiconductor chip packaging module structure with low thermal resistance
CN1267086A (en) Electronic package method
Wang et al. Development of an ultralong ultralow n-loop for wire bonding
CN214815528U (en) Laser welding equipment for surface mounting process
CN1841721A (en) Flip-chip type packaging structure and method for manufacturing same
CN204632803U (en) A kind of CSP LED and substrate
JPH07249897A (en) Electronic component mounting apparatus
ZHU et al. New Challenge to Underfills
CN106328611A (en) Semiconductor encapsulation structure and manufacturing method
Yan et al. Double bump flip-chip assembly
US20230325552A1 (en) Methods of determining suitability of a wire bonding tool for a wire bonding application, and related methods

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant