JP2004273507A - Wire bonding device - Google Patents

Wire bonding device Download PDF

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JP2004273507A
JP2004273507A JP2003058232A JP2003058232A JP2004273507A JP 2004273507 A JP2004273507 A JP 2004273507A JP 2003058232 A JP2003058232 A JP 2003058232A JP 2003058232 A JP2003058232 A JP 2003058232A JP 2004273507 A JP2004273507 A JP 2004273507A
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Prior art keywords
bonding
height
semiconductor chip
laser beam
capillary
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Kouji Nishimaki
公路 西巻
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Kaijo Corp
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Kaijo Corp
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wire bonding device which calculates the height of a bonding surface before a bonding operation is started using a laser beam that irradiates the bonding surface, sets up a region for an optimal low-speed operation, and provides a shortest bonding time. <P>SOLUTION: The height of the bonding surface is stored as reference data for bonding, and the spot position of a laser beam θ irradiating the same plane is calculated on the basis of a photoed image and stored. In a practical bonding process, the transferred semiconductor chip 1, a board, or a lead frame as a bonding surface is irradiated with a laser beam 17, the amount of deviation of the irradiated spot from the previously stored spot position is calculated, and a height difference is obtained from the calculated amount of deviation to calculate the height of an actual bonding surface. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明は、ワイヤボンディング装置におけるボンディング対象である半導体チップの高さ検出および補正に関するものである。
【０００２】
【従来の技術】
ワイヤボンダによる接合工程の説明を用いて従来の高さ検出方法を説明する。
図２はボンディング工程を概略的に示したもである。
まず、半導体チップ１がリードフレーム２のアイランド２ａ上に搭載され、そして、ワークステージ３上に移載される。次に、超音波ホーン４の先端側に取り付けられたキャピラリ５に通された金ワイヤ６の先端に、電気トーチ（図示していない）によりボール６ａが形成される。
【０００３】
この状態において、カメラ７により検出された、半導体チップ１上のある電極パッド１ａの位置に、ホーン４とともにキャピラリ５が下降される。そして、ホーン４を介してキャピラリ５が超音波振動され、また、所定の熱と荷重とが付加されることにより、金ワイヤ６の先端のボール６ａが半導体チップ１上の所定の位置の電極パッド１ａに接合される。
【０００４】
この後、キャピラリ５は金ワイヤ６を少しずつ送り出しながら上昇され、カメラ７により検出されたリードフレーム２のあるリード２ｂの位置に移動される。そして、キャピラリ５を介して所定の熱と荷重とが付加されることにより、金ワイヤ６が所定の位置のリード２ｂに圧着される。
【０００５】
この状態で、クランパ（図示していない）を引き上げることにより金ワイヤ６は切断され、半導体チップ１の電極パッド１ａおよび、リードフレーム２のリード２ｂの間にループ状に金ワイヤ６が接合される。
【０００６】
この後、新たにボール６ａの形成が行われて、次のパッド１ａへ金ワイヤ６を接合するためにキャピラリ５の移動が制御され、接合の動作が繰返される。
【０００７】
図３は、上記したワイヤボンダにおける、接合時の動作シーケンスを示すものである。なお、図３（ａ１）は、キャピラリ５のＺ軸方向のパッドへの下降動作タイミングであり、図３（ｂ１）は、パッド面タッチ検出タイミングであり、図３（ｃ１）は、Ｚ軸方向の制御方式切り換えタイミングでである。また、図３（ａ２）は、キャピラリ５のＺ軸方向のリードへの下降動作タイミングであり、図３（ｂ２）は、リード面タッチ検出タイミングであり、図３（ｃ２）は、Ｚ軸方向の制御方式切り換えタイミングでである。
【０００８】
すなわち、従来のボンディング動作は、まず、ボール６ａを形成した後、キャピラリ５を所定の電極パッド１ａの上方に移動する。そして、その位置からキャピラリ５を高速下降動作させる（図３ステップＡ）。
【０００９】
キャピラリ５の下降が所定のサーチ高さに達すると、その位置からキャピラリ５を等速下降動作（サーチ部）させる（図３ステップＢ）。そして、ボール６ａの電極パッド１ａへの接触を検出する、ワーク面タッチ検出のタイミングにおいて、キャピラリ５のＺ軸方向の制御を切り換え、超音波振動を発生させる。これにより、半導体チップ１上の所定の電極パッド１ａへの金ワイヤ６の接合が行われる。（図３ステュプＣ）。
【００１０】
次に電極パッド１ａへの金ワイヤ６のボンディングが終了すると、キャピラリ５のＺ軸方向の制御を、荷重制御から位置制御に切り換えて、Ｘ軸方向およびＹ軸方向の動作とともにキャピラリ５をＺ軸方向に移動させ、ループの形成を行う。（図３ステップＤ）。
【００１１】
そして、ループの形成にともなうキャピラリ５の下降が、リード２ｂ上の所定のサーチ高さに達すると、その位置からキャピラリ５を等速下降動作（サーチ部）させる。（図３ステップＥ）
【００１２】
同様にして、金ワイヤ６のリード２ｂへの接触を検出する、ワーク面タッチ検出のタイミングにおいて、キャピラリ６のＺ軸方向の制御を切り換え超音波振動を発生させる。これにより、リードフレーム２上の所定のリード２ｂへの金ワイヤ６の接合が行われる。（図３ステップＦ）
【００１３】
リード２ｂへの金ワイヤ６のボンディングが終了すると、キャピラリ５のＺ軸方向の制御を、荷重制御から位置制御に切り換えてキャピラリ５を上昇させ、金ワイヤ６を切断し、ボール６ａの形成を行い、図３ステップＧ、また、次の電極パッド１ａの上方へキャピラリ５を移動させることにより、ワイヤボンディングの１シーケンスが終了する。（図３ステップＨ）
【００１４】
このように、従来においては、ワーク面（半導体チップ１およびリードフレーム２）の高さのばらつきを考慮してサーチ高さを設定し、高速下降動作の後、キャピラリ５の等速下降動作を行って、ワーク面に対する衝突時の衝撃（接合時のインパクト荷重）が一定となるように制御している。
【００１５】
この速度を切り換える高さは、ティーチングされたボンディング点の高さを基準として動作させている。
【００１６】
たとえば、図４のように、ティーチングしたボンディング点の高さＨ０に対して、実際にボンディングするものの高さｈが高いと、ボンディングツールがボンディング面に高速移動の領域で激突する可能性がある。
【００１７】
また、図５のように、ティーチングしたボンディング点の高さＨ０に対して、実際にボンディングするものの高さｈが低いと、低速移動の領域が長くなり、ボンディング時間が遅くなる可能性がある。
【００１８】
つまり、ボンディング点の高さ方向のバラツキが大きいものをボンディングする場合は、高速動作の領域での激突を避けるため、低速で動作させる領域を大きくする必要があり、ボンディング時間が遅くなっていた。
【００１９】
そこで、ボンディング点の高さ方向のバラツキが大きいものに対して、３つのパッドの高さをボンディングしながら測定し、その結果から残りのパッドの高さを算出し、ボンディングする方法が考えられた。
また、オートフォーカス機能付きのカメラを搭載し、チップの高さを測定する方法も考えられた。
【００２０】
【特許文献】
【特許文献１】特開平０６―１８１２３２公報
【００２１】
【特許文献】
【特許文献２】特開平０９―２６０４１５公報
【００２２】
【発明が解決しようとする課題】
しかしながら、この方法でも最初の３ワイヤのボンディングスピード低下は避けられないし、ワイヤ数の少ないものでの効果は期待出来ない。
又、装置に使用されているカメラレンズは、多少、チップの高さ方向のバラツキがあっても画像処理での位置決め精度を維持するために、焦点深度の深いものを使用する。それに対しオートフォーカスで精度良く測定するためには焦点深度が浅い方が有利であり、位置決めに適当なカメラレンズを選択すると、高さ測定に十分な精度が得られないことがある。
【００２３】
さらに、ボンディング面の高さ方向のバラツキが大きいものをボンディングする場合は、低速で動作させる領域を大きくする必要があり、その分ボンディングに要する時間が多くなり、生産量も減少するという問題があった。
【００２４】
また、１チップの先頭３ワイヤのみ低速領域を大きくして高さを測定し、それ以降のパッド高さを算出する方法もワイヤ数が少ないものに関しては大きなロス時間が発生する。
【００２５】
オートフォーカスを用いる方法は、光学系の選択が困難で、高さ測定に十分な精度が得られないことがある。
【００２６】
そこで本発明は、ボンディング面を照射するレーザ光を利用し、ボンディング前にボンディング面の高さを算出し、最適な低速動作の領域を設定し、最速なボンディング時間を提供することを目的とする。
【００２７】
【課題を解決するための手段】
半導体チップの電極と外部電極を配線するワイヤボンディング装置において、角度θから半導体チップ上に照射するレーザ光と、レーザ光が照射する位置を撮像する撮像手段と、基準として予め記憶した半導体チップ上のレーザ光の位置と新たに搬送されてきた半導体チップ上のレーザ光の位置を比較する手段と、予め記憶した半導体チップと搬送されてきた半導体チップの高さの差を算出する手段を具備したことを特徴とするワイヤボンディング装置。
【００２８】
前記記載の半導体チップ高さは、基準の半導体チップ高さ（Ｚ０）と、高さの差（ΔＺ）としたことを特徴とする請求項１項記載のワイヤボンディング装置。
【００２９】
【発明の実施の形態】
以下に本発明の実施の形態を示す。
図７に示すように、ボンディングヘッドに搭載されているカメラ７、光学レンズ１６の光軸に対し、角度（θ）の方向から、レーザ光源１７を設置する。
【００３０】
この時、図８に示すように、基準の高さとしたい半導体チップ１のある位置にレーザ光のスポットを照射し、それがモニター１９のセンター付近に映し出されるようにレーザ光源１７を設置する。
【００３１】
まず、ボンディング前に基準となる半導体チップ１の高さを、超音波ホーン４を動作させ、キャピラリ５が半導体チップ１に接触した高さを、Ｚエンコーダ１８から読み込み、記憶する。（Ｚ０）
【００３２】
それと同時に基準となる半導体チップ１上に映し出され、光学レンズ１６，カメラ７を通して画像処理部２０に画像信号として送られたレーザ光のスポット中心（Ｘ０）を画像処理により算出する。
【００３３】
実際にボンディングを行う場合、ワークステージ３に搬送された半導体チップ１上にレーザ光を照射する。図９のように、この画像も光学レンズ１６，カメラ７を通して画像処理部１０に送られ、レーザ光のスポット中心（Ｘ１）を画像処理により算出する。
【００３４】
算出された位置はから、基準の半導体チップとの高さの差（ΔＺ）は、
基準の半導体チップとの高さの差ΔＺ＝（Ｘ１−Ｘ０）・ｔａｎθ．．（１）
となる。
【００３５】
したがって、実際にこの半導体チップ１の面にボンディングを行う場合は、基準の半導体チップの高さ（Ｚ０）＋高さの差（ΔＺ）をこの半導体チップ１の高さとしてボンディングすれば良い。
【００３６】
つまり、この高さを基準に最低限必要な低速動作範囲となるように設定することが可能となり、ボンディング時間を最速化することが出来る。
【００３７】
【発明の効果】
以上説明したように、本発明の方法においては、ボンディング前にボンディング点の高さが既知となり、最短の低速動作の範囲を設定できることにより、ボンディング時間を最速化し、生産量の向上をはかることが出来る。
【図面の簡単な説明】
【図１】本発明の、装置構成を示すブロック図である。
【図２】従来技術とその問題点を説明するために、ワイヤボンダによる接合の手順を概略的に示す斜視図である。
【図３】従来技術とその問題点を説明するために、ワイヤボンディングにおけるボンディングツールのＺ方向の動作を示した図である。
【図４】従来技術とその問題点を説明するために、基準のボンディング高さより実際のボンディング高さが高い場合を示した図である。
【図５】従来技術とその問題点を説明するために、基準のボンディング高さより実際のボンディング高さが低い場合を示した図である。
【図６】高さの違う物体に照射されたレーザ光の位置を示した図である。
【図７】レーザ光源の設置位置を示した図である。
【図８】基準のチップにおける高さとレーザ光の位置を示した図である。
【図９】実際にボンディングするチップにおける高さとレーザ光の位置を示した図である。
【符号の説明】
１ 半導体チップ
１ａ 電極パッド
２ リードフレーム
２ａ リードフレームのアイランド部
２ｂ リード
３ ワークステージ
４ 超音波ホーン
５ キャピラリ
６ 金ワイヤ
６ａ 金ボール
７ カメラ
１１ ＸＹテーブル
１６ 光学レンズ
１７ レーザ光源
１８ Ｚエンコーダ
１９ モニター
２０ 画像処理部
２１ ＸＹステージおよびボンディングヘッド制御部
２２ 搬送制御部
θ レーザー光角度[0001]
BACKGROUND OF THE INVENTION
The present invention relates to height detection and correction of a semiconductor chip to be bonded in a wire bonding apparatus.
[0002]
[Prior art]
A conventional height detection method will be described with reference to a bonding process using a wire bonder.
FIG. 2 schematically shows the bonding process.
First, the semiconductor chip 1 is mounted on the island 2 a of the lead frame 2 and then transferred onto the work stage 3. Next, a ball 6 a is formed by an electric torch (not shown) at the tip of the gold wire 6 passed through the capillary 5 attached to the tip of the ultrasonic horn 4.
[0003]
In this state, the capillary 5 is lowered together with the horn 4 at the position of a certain electrode pad 1 a on the semiconductor chip 1 detected by the camera 7. Then, the capillary 5 is ultrasonically oscillated through the horn 4 and a predetermined heat and load are applied, whereby the ball 6a at the tip of the gold wire 6 is placed on the electrode pad at a predetermined position on the semiconductor chip 1. It is joined to 1a.
[0004]
Thereafter, the capillary 5 is lifted while feeding out the gold wire 6 little by little, and is moved to the position of the lead 2b with the lead frame 2 detected by the camera 7. Then, by applying predetermined heat and load through the capillary 5, the gold wire 6 is crimped to the lead 2b at a predetermined position.
[0005]
In this state, the gold wire 6 is cut by pulling up the clamper (not shown), and the gold wire 6 is joined in a loop between the electrode pad 1a of the semiconductor chip 1 and the lead 2b of the lead frame 2. .
[0006]
Thereafter, a new ball 6a is formed, the movement of the capillary 5 is controlled to bond the gold wire 6 to the next pad 1a, and the bonding operation is repeated.
[0007]
FIG. 3 shows an operation sequence at the time of joining in the wire bonder described above. 3 (a1) shows the lowering operation timing of the capillary 5 to the pad in the Z-axis direction, FIG. 3 (b1) shows the pad surface touch detection timing, and FIG. 3 (c1) shows the Z-axis direction. This is the control system switching timing. 3 (a2) shows the lowering operation timing of the capillary 5 toward the lead in the Z-axis direction, FIG. 3 (b2) shows the lead surface touch detection timing, and FIG. 3 (c2) shows the Z-axis direction. This is the control system switching timing.
[0008]
That is, in the conventional bonding operation, first, after forming the ball 6a, the capillary 5 is moved above the predetermined electrode pad 1a. Then, the capillary 5 is moved down at a high speed from that position (step A in FIG. 3).
[0009]
When the descending of the capillary 5 reaches a predetermined search height, the capillary 5 is lowered at a constant speed (search part) from that position (step B in FIG. 3). Then, at the timing of the work surface touch detection for detecting the contact of the ball 6a with the electrode pad 1a, the control in the Z-axis direction of the capillary 5 is switched to generate ultrasonic vibration. As a result, the gold wire 6 is bonded to the predetermined electrode pad 1a on the semiconductor chip 1. (FIG. 3 Step C).
[0010]
Next, when the bonding of the gold wire 6 to the electrode pad 1a is completed, the control in the Z-axis direction of the capillary 5 is switched from the load control to the position control, and the capillary 5 is moved along the Z-axis along with the operations in the X-axis direction and the Y-axis direction. Move in the direction to form a loop. (FIG. 3, Step D).
[0011]
When the lowering of the capillary 5 due to the formation of the loop reaches a predetermined search height on the lead 2b, the capillary 5 is lowered at a constant speed (search part) from that position. (Fig. 3, Step E)
[0012]
Similarly, the control of the capillary 6 in the Z-axis direction is switched and ultrasonic vibration is generated at the timing of the work surface touch detection for detecting the contact of the gold wire 6 with the lead 2b. Thereby, the gold wire 6 is joined to the predetermined lead 2b on the lead frame 2. (Figure 3 Step F)
[0013]
When the bonding of the gold wire 6 to the lead 2b is completed, the control in the Z-axis direction of the capillary 5 is switched from load control to position control, the capillary 5 is raised, the gold wire 6 is cut, and the ball 6a is formed. In FIG. 3, step G, and by moving the capillary 5 above the next electrode pad 1a, one sequence of wire bonding is completed. (Fig. 3, Step H)
[0014]
As described above, in the prior art, the search height is set in consideration of the variation in the height of the work surface (semiconductor chip 1 and lead frame 2), and the capillary 5 is lowered at a constant speed after the high-speed lowering action. Thus, the impact at the time of collision with the workpiece surface (impact load at the time of joining) is controlled to be constant.
[0015]
The height for switching the speed is operated based on the height of the teaching bonding point.
[0016]
For example, as shown in FIG. 4, if the height h of what is actually bonded is higher than the height H0 of the teaching bonding point, the bonding tool may collide with the bonding surface in the region of high-speed movement.
[0017]
Further, as shown in FIG. 5, if the height h of what is actually bonded is lower than the height H0 of the teaching bonding point, the low-speed movement region becomes long and the bonding time may be delayed.
[0018]
That is, in the case of bonding a bonding point having a large variation in the height direction, it is necessary to enlarge a region operated at a low speed in order to avoid a collision in a high-speed operation region, resulting in a slow bonding time.
[0019]
Therefore, a method was considered in which the heights of the three pads were measured while bonding, and the remaining pad heights were calculated from the results for bonding with large variations in the bonding point height direction. .
In addition, a method of measuring the height of the chip by mounting a camera with an autofocus function was also considered.
[0020]
[Patent Literature]
[Patent Document 1] Japanese Patent Laid-Open No. 06-181232
[Patent Literature]
[Patent Document 2] JP 09-260415 A
[Problems to be solved by the invention]
However, even with this method, a reduction in the bonding speed of the first three wires is inevitable, and an effect with a small number of wires cannot be expected.
Further, the camera lens used in the apparatus has a deep focal depth in order to maintain the positioning accuracy in the image processing even if there is some variation in the height direction of the chip. On the other hand, in order to measure accurately with autofocus, it is advantageous that the depth of focus is shallow, and if a camera lens suitable for positioning is selected, sufficient accuracy for height measurement may not be obtained.
[0023]
In addition, when bonding with a large variation in the height direction of the bonding surface, it is necessary to enlarge the area to be operated at a low speed, which increases the time required for bonding and reduces the production amount. It was.
[0024]
Also, the method of measuring the height by increasing the low speed region of only the first three wires of one chip and calculating the pad height after that causes a large loss time for those with a small number of wires.
[0025]
In the method using autofocus, it is difficult to select an optical system, and sufficient accuracy for height measurement may not be obtained.
[0026]
Therefore, the present invention aims to provide the fastest bonding time by using the laser beam that irradiates the bonding surface, calculating the height of the bonding surface before bonding, setting the optimum low-speed operation region, and so on. .
[0027]
[Means for Solving the Problems]
In a wire bonding apparatus for wiring an electrode of a semiconductor chip and an external electrode, a laser beam irradiated onto the semiconductor chip from an angle θ, an imaging means for imaging a position irradiated with the laser beam, and a semiconductor chip stored in advance as a reference Means for comparing the position of the laser light with the position of the laser light on the newly transported semiconductor chip, and means for calculating the height difference between the semiconductor chip stored in advance and the semiconductor chip transported A wire bonding apparatus.
[0028]
The wire bonding apparatus according to claim 1, wherein the semiconductor chip height is a reference semiconductor chip height (Z0) and a height difference (ΔZ).
[0029]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below.
As shown in FIG. 7, a laser light source 17 is installed from the direction of an angle (θ) with respect to the optical axes of the camera 7 and the optical lens 16 mounted on the bonding head.
[0030]
At this time, as shown in FIG. 8, a laser light spot is radiated to a position where the semiconductor chip 1 to be set as a reference height is irradiated, and the laser light source 17 is installed so as to be projected near the center of the monitor 19.
[0031]
First, the height of the reference semiconductor chip 1 before bonding is operated by operating the ultrasonic horn 4 and the height at which the capillary 5 is in contact with the semiconductor chip 1 is read from the Z encoder 18 and stored. (Z0)
[0032]
At the same time, the spot center (X0) of the laser beam that is displayed on the reference semiconductor chip 1 and sent as an image signal to the image processing unit 20 through the optical lens 16 and the camera 7 is calculated by image processing.
[0033]
When bonding is actually performed, laser light is irradiated onto the semiconductor chip 1 transported to the work stage 3. As shown in FIG. 9, this image is also sent to the image processing unit 10 through the optical lens 16 and the camera 7, and the spot center (X1) of the laser light is calculated by image processing.
[0034]
From the calculated position, the height difference (ΔZ) from the reference semiconductor chip is
Difference in height from the reference semiconductor chip ΔZ = (X1−X0) · tan θ. . (1)
It becomes.
[0035]
Therefore, when bonding is actually performed on the surface of the semiconductor chip 1, the height of the reference semiconductor chip (Z0) + the difference in height (ΔZ) may be bonded as the height of the semiconductor chip 1.
[0036]
In other words, it is possible to set the minimum required low speed operation range based on this height, and the bonding time can be maximized.
[0037]
【The invention's effect】
As described above, in the method of the present invention, the height of the bonding point is known before bonding, and the shortest low-speed operation range can be set, so that the bonding time can be maximized and the production volume can be improved. I can do it.
[Brief description of the drawings]
FIG. 1 is a block diagram showing an apparatus configuration of the present invention.
FIG. 2 is a perspective view schematically showing a joining procedure using a wire bonder in order to explain the conventional technique and its problems.
FIG. 3 is a diagram illustrating an operation in a Z direction of a bonding tool in wire bonding in order to explain a conventional technique and its problems.
FIG. 4 is a diagram illustrating a case where an actual bonding height is higher than a reference bonding height in order to explain the related art and its problems.
FIG. 5 is a diagram showing a case where an actual bonding height is lower than a reference bonding height in order to explain the conventional technique and its problems.
FIG. 6 is a diagram showing the position of laser light irradiated to objects having different heights.
FIG. 7 is a diagram showing the installation position of a laser light source.
FIG. 8 is a diagram showing a height and a position of a laser beam in a reference chip.
FIG. 9 is a diagram showing a height and a position of a laser beam in a chip to be actually bonded.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Semiconductor chip 1a Electrode pad 2 Lead frame 2a Island part 2b of lead frame Lead 3 Work stage 4 Ultrasonic horn 5 Capillary 6 Gold wire 6a Gold ball 7 Camera 11 XY table 16 Optical lens 17 Laser light source 18 Z encoder 19 Monitor 20 Image Processing unit 21 XY stage and bonding head control unit 22 Transport control unit θ Laser beam angle

Claims (2)

半導体チップの電極と外部電極を配線するワイヤボンディング装置において、角度θから半導体チップ上に照射するレーザ光と、レーザ光が照射する位置を撮像する撮像手段と、基準として予め記憶した半導体チップ上のレーザ光の位置と新たに搬送されてきた半導体チップ上のレーザ光の位置を比較する手段と、予め記憶した半導体チップと搬送されてきた半導体チップの高さの差を算出する手段を具備したことを特徴とするワイヤボンディング装置。In a wire bonding apparatus for wiring an electrode of a semiconductor chip and an external electrode, a laser beam irradiated on the semiconductor chip from an angle θ, an imaging means for imaging a position irradiated with the laser beam, and a semiconductor chip stored in advance as a reference Means for comparing the position of the laser light with the position of the laser light on the newly transported semiconductor chip, and means for calculating the difference in height between the semiconductor chip stored in advance and the semiconductor chip transported A wire bonding apparatus. 前記記載の半導体チップ高さは、基準の半導体チップ高さ（Ｚ０）と、高さの差（ΔＺ）としたことを特徴とする請求項１項記載のワイヤボンディング装置。The wire bonding apparatus according to claim 1, wherein the semiconductor chip height is a reference semiconductor chip height (Z0) and a height difference (ΔZ).
JP2003058232A 2003-03-05 2003-03-05 Wire bonding device Pending JP2004273507A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101133131B1 (en) 2006-04-06 2012-04-06 삼성테크윈 주식회사 Method of bonding wire
CN103262229A (en) * 2011-09-28 2013-08-21 株式会社华祥 Bonding device
WO2018038113A1 (en) * 2016-08-23 2018-03-01 株式会社新川 Wire bonding method and wire bonding device
CN117984001A (en) * 2024-04-03 2024-05-07 宁波尚进自动化科技有限公司 Welding method, welding device, welding equipment, electronic equipment and storage medium

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101133131B1 (en) 2006-04-06 2012-04-06 삼성테크윈 주식회사 Method of bonding wire
CN103262229A (en) * 2011-09-28 2013-08-21 株式会社华祥 Bonding device
US8651355B2 (en) 2011-09-28 2014-02-18 Kaijo Corporation Bonding apparatus
TWI460802B (en) * 2011-09-28 2014-11-11 Kaijo Kk Jointing device
WO2018038113A1 (en) * 2016-08-23 2018-03-01 株式会社新川 Wire bonding method and wire bonding device
JPWO2018038113A1 (en) * 2016-08-23 2019-06-24 株式会社新川 Wire bonding method and wire bonding apparatus
US11004821B2 (en) 2016-08-23 2021-05-11 Shinkawa Ltd. Wire bonding method and wire bonding apparatus
CN117984001A (en) * 2024-04-03 2024-05-07 宁波尚进自动化科技有限公司 Welding method, welding device, welding equipment, electronic equipment and storage medium

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