CN115939030B - Method for etching contact hole without stop layer - Google Patents
Method for etching contact hole without stop layer Download PDFInfo
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- CN115939030B CN115939030B CN202211683496.8A CN202211683496A CN115939030B CN 115939030 B CN115939030 B CN 115939030B CN 202211683496 A CN202211683496 A CN 202211683496A CN 115939030 B CN115939030 B CN 115939030B
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- Prior art keywords
- etching
- gas
- contact hole
- dielectric layer
- depth
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- 238000005530 etching Methods 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229920000642 polymer Polymers 0.000 claims abstract description 16
- 238000001020 plasma etching Methods 0.000 claims abstract description 9
- 238000009616 inductively coupled plasma Methods 0.000 claims abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 8
- 238000004140 cleaning Methods 0.000 claims abstract description 5
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims abstract description 3
- 238000000576 coating method Methods 0.000 claims abstract description 3
- 238000000059 patterning Methods 0.000 claims abstract description 3
- 239000007789 gas Substances 0.000 claims description 38
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- -1 which may be CF Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for etching a contact hole without a stop layer, which comprises the following steps: s1, depositing a dielectric layer on a silicon waveguide substrate, and then coating photoresist and patterning; s2, etching the dielectric layer through an inductively coupled plasma machine table and first gas, wherein the average etching depth is h 1 The method comprises the steps of carrying out a first treatment on the surface of the S3, etching the dielectric layer through a magnetic field enhanced reactive ion etching machine table and a second gas, wherein the average etching depth is h 2 ，h 1 +h 2 =h, h is the total depth of etching; s4, removing the photoresist and the polymer through a dry method, and cleaning through a wet method to form a contact hole pattern. According to the invention, by adjusting different etching methods, the load effect of different opening areas is balanced, the substrate loss is reduced, and the consistency of contact resistance is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a method for etching a contact hole without a stop layer.
Background
The invention patent with application number of CN201810330470 discloses a manufacturing method of a contact hole, which comprises the following steps: typically, in order to reduce the etching load effect of different opening regions, a stop layer (CESL), typically silicon nitride or silicon oxynitride, is deposited first; in structures comprising silicon waveguides, the proximity of the silicon nitride or silicon oxynitride contact etch stop layer introduces additional transmission loss to the silicon waveguide, and therefore, the use of an etch stop layer is generally avoided, thus placing high demands on reducing the etch loading effect in the different opening regions.
If a magnetic field enhanced reactive ion etching machine is used for etching (dirty mode or deposition mode), more etchant is consumed in the larger area of the opening due to the existence of a loading effect, the etching rate is slow due to low concentration of the etchant, and when the etching of the smaller area of the opening is finished, a lot of medium remains in the larger area of the opening, and the etching is seriously stopped.
If inductively coupled plasma etching (clean mode) is adopted, the etching selectivity of the substrate is generally not high enough, the product in the area with smaller opening is not easily pumped away to cause slow etching rate, and contrary to magnetic field enhanced reactive ion etching, when the etching of the area with smaller opening is completed, the over etching amount of the area with larger opening is too much, so that a lot of substrate loss is brought, and the consistency of contact resistance is poor.
Therefore, a new method for etching a contact hole without a stop layer is needed to solve the problems of the two etching methods of the contact hole.
Disclosure of Invention
In order to solve the problems, the invention provides a method for etching a contact hole without a stop layer, which balances the load effect of different opening areas by adjusting different etching methods, reduces the difference of etching depths of the contact holes with different opening areas, reduces the substrate loss and improves the consistency of contact resistance.
The technical scheme adopted by the invention is as follows:
a method for etching a contact hole without a stop layer comprises the following steps:
s1, depositing a dielectric layer on a silicon waveguide substrate, and then coating photoresist and patterning;
s2, etching the dielectric layer through an inductively coupled plasma machine table and first gas, wherein the average etching depth is h 1 ；
S3, etching the dielectric layer through a magnetic field enhanced reactive ion etching machine table and a second gas, wherein the average etching depth is h 2 ，h 1 +h 2 =h, h is the total depth of etching;
s4, removing the photoresist and the polymer through a dry method, and cleaning through a wet method to form a contact hole pattern.
Advancing oneStep by step, etch depth h 1 And etching depth h 2 Is inversely proportional to the proportion of the open area of the dielectric layer.
Further, the etching depth h 1 The ratio of the etching depth h to the etching total depth h is in the range of 55% -75%.
Further, the first gas comprises a polymer-less gas comprising CF and argon 4 、CHF 3 。
Further, the second gas comprises a polymer-rich gas, oxygen and argon, the polymer-rich gas being C 4 F 6 、C 4 F 8 、C 5 F 8 One or more of the following.
Further, the polymer content in the first gas is less than the polymer content in the second gas.
Further, the selectivity ratio of the second gas is higher than a preset value, and the selectivity ratio of the second gas is the ratio of the etching rate of the dielectric layer to the etching rate of the silicon waveguide substrate.
Further, the second gas has a selectivity greater than 10.
Further, the dielectric layer comprises silicon dioxide.
Further, the silicon waveguide substrate is silicon or germanium.
The invention has the beneficial effects that:
according to the invention, by adjusting different etching methods, the load effect of different opening areas is balanced, the substrate loss is reduced, and the consistency of contact resistance is improved. Specifically, the invention firstly etches a part of medium by using an inductively coupled plasma machine, at this time, the residual thickness of the larger area of the opening is thicker than that of the smaller area of the opening, the etching depth needs to be controlled accurately, and then the etching ratio of the two etching machines is related to the specific opening area ratio by using a magnetic field enhanced reactive ion etching machine to etch the residual medium, thus effectively reducing the load effect, ensuring that the substrate loss of the larger area of the opening and the smaller area of the opening is basically consistent, and improving the consistency of contact resistance. The present invention is not limited to contact hole etching, and is applicable to holes without a stop layer.
Drawings
FIG. 1 is a flow chart of a method for non-stop contact hole etching in accordance with an embodiment of the present invention.
Fig. 2 is a schematic diagram of step S1 according to an embodiment of the present invention.
Fig. 3 is a schematic diagram of step S2 according to an embodiment of the present invention.
Fig. 4 is a schematic diagram of step S3 according to an embodiment of the present invention.
Fig. 5 is a schematic diagram of step S4 according to an embodiment of the present invention.
Detailed Description
Specific embodiments of the present invention will now be described in order to provide a clearer understanding of the technical features, objects and effects of the present invention. It should be understood that the particular embodiments described herein are illustrative only and are not intended to limit the invention, i.e., the embodiments described are merely some, but not all, of the embodiments of the invention. All other embodiments, which can be made by a person skilled in the art without making any inventive effort, are intended to be within the scope of the present invention.
As shown in fig. 1, the embodiment provides a method for etching a contact hole without a stop layer, which includes the following steps:
s1, as shown in FIG. 2, a dielectric layer is deposited on a silicon waveguide substrate, and then photoresist is coated and patterned. The silicon waveguide substrate is silicon or germanium, and a stop layer is not arranged above the silicon waveguide substrate, and the dielectric layer is typically silicon dioxide.
S2, as shown in FIG. 3, etching the dielectric layer by using an inductively coupled plasma machine and a first gas, wherein the average etching depth is h1. The residual thickness of the larger area of the opening is thinner than that of the smaller area of the opening, and the etching depth is required to be accurately controlled.
Preferably, the first gas comprises a polymer-less gas, which may be CF, and argon, and the polymer content should be low 4 、CHF 3 . Preferably, the optimal ratio of the etching depth h1 to the etching total depth h is 55% -75%.
Specifically, the inductively coupled plasma apparatus employs clean mode (cleaning mode) for etching.
S3, as shown in FIG. 4, etching the dielectric layer by a magnetic field enhanced reactive ion etching machine and a second gas, wherein the average etching depth is h 2 ，h 1 +h 2 =h, h is the total depth of etching. Wherein the etching depth h 1 And etching depth h 2 Is inversely proportional to the proportion of the open area of the dielectric layer.
Preferably, the second gas comprises a polymer rich gas, oxygen and argon, the polymer rich gas being C 4 F 6 、C 4 F 8 、C 5 F 8 One or more of the following.
The selectivity of the second gas, which is the ratio of the etch rate of the dielectric layer to the etch rate of the silicon waveguide substrate, should be higher than a preset value so that the loss of the substrate can be controlled to a minimum. Preferably, the second gas should be selected to have a ratio of greater than 10.
Specifically, the magnetic field enhanced reactive ion etching machine adopts a dirty mode or a deposition mode for etching.
S4, removing the photoresist and the polymer through a dry method, and cleaning through a wet method to form a contact hole pattern as shown in FIG. 5.
In step S2, etching conditions of the inductively coupled plasma apparatus are: the pressure is 5-30MT, the power is 400-900W, the bias voltage is 100-300V, and the etching gas is mainly CF of 30-100SCCM (standard milliliter per minute) 4 CHF of 3-20SCCM 3 Ar of 3-20SCCM, and etching total depth is 55% -75%.
Preferably, the optimal etching conditions in step S2 are: pressure 12MT, power 620W, bias voltage 155V, etching gas CF of mainly 47SCCM 4 CHF of 11SCCM 3 Ar of 15 SCCM.
In step S3, the etching conditions of the magnetic field enhanced reactive ion etching machine are as follows: the etching gas being mainly C 4 F 8 、C 5 F 8 、C 4 F 6 The gas with higher C/F ratio is matched with a certain amount of Ar and O 2 Silicon dioxide versus silicon or germaniumThe selection ratio is more than 10.
Preferably, the optimal etching conditions in step S3 are: pressure 46MT, power 1420W, etching gas mainly 11SCCM C 4 F 8 O of 6SCCM 2 CO of 52SCCM, ar of 103 SCCM.
The foregoing is merely a preferred embodiment of the invention, and it is to be understood that the invention is not limited to the form disclosed herein but is not to be construed as excluding other embodiments, but is capable of numerous other combinations, modifications and environments and is capable of modifications within the scope of the inventive concept, either as taught or as a matter of routine skill or knowledge in the relevant art. And that modifications and variations which do not depart from the spirit and scope of the invention are intended to be within the scope of the appended claims.
Claims (9)
1. The method for etching the contact hole without the stop layer is characterized by comprising the following steps of:
s1, depositing a dielectric layer on a silicon waveguide substrate, and then coating photoresist and patterning;
s2, etching the dielectric layer through an inductively coupled plasma machine and first gas, wherein the average etching depth ish 1 At this time, the remaining thickness of the larger area of the opening is thinner than that of the smaller area of the opening;
s3, etching the dielectric layer through a magnetic field enhanced reactive ion etching machine table and a second gas, wherein the average etching depth ish 2 ，h 1 + h 2 = h，hIs the total etching depth; depth of etchingh 1 And etching depthh 2 Inversely proportional to the ratio of the open areas of the dielectric layer, such that the substrate loss is substantially uniform in the larger open areas and the smaller open areas;
and S4, removing the photoresist and the polymer by a dry method, and forming a contact hole pattern by wet cleaning.
2. The method for etching a contact hole without a stop layer according to claim 1, wherein the etching depth ish 1 And etching total depthhThe proportion range of (2) includes 55% -75%.
3. The method of non-stop layer contact hole etching of claim 1, wherein the first gas comprises a polymer less gas comprising CF and argon 4 、CHF 3 。
4. The method of claim 1, wherein the second gas comprises a polymer rich gas, oxygen and argon, the polymer rich gas being C 4 F 6 、C 4 F 8 、C 5 F 8 One or more of the following.
5. The method of non-stop layer contact hole etching of claim 1, wherein a polymer content in the first gas is less than a polymer content in the second gas.
6. The method of claim 1, wherein the selectivity of the second gas is higher than a predetermined value, the selectivity of the second gas being a ratio of an etch rate of the dielectric layer to an etch rate of the silicon waveguide substrate.
7. The method of non-stop layer contact hole etching of claim 6, wherein the second gas has a selectivity greater than 10.
8. The method of non-stop layer contact hole etching of any of claims 1-7, wherein the dielectric layer comprises silicon dioxide.
9. The method of non-stop layer contact hole etching of any of claims 1-7, wherein the silicon waveguide substrate is silicon or germanium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211683496.8A CN115939030B (en) | 2022-12-27 | 2022-12-27 | Method for etching contact hole without stop layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211683496.8A CN115939030B (en) | 2022-12-27 | 2022-12-27 | Method for etching contact hole without stop layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115939030A CN115939030A (en) | 2023-04-07 |
| CN115939030B true CN115939030B (en) | 2024-02-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202211683496.8A Active CN115939030B (en) | 2022-12-27 | 2022-12-27 | Method for etching contact hole without stop layer |
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Citations (15)
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| JPH08222552A (en) * | 1995-02-17 | 1996-08-30 | Sony Corp | Plasma etching of silicon oxide based material layer |
| EP0813233A2 (en) * | 1996-06-12 | 1997-12-17 | Applied Materials, Inc. | Method of etching dielectric layer using a plasma generated from a mixture of flourohydrocarbon gas, NH3-genrating gas, and carbon-oxygen containing gas |
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| CN103633106A (en) * | 2013-11-28 | 2014-03-12 | 上海华力微电子有限公司 | CMOS (complementary metal oxide semiconductor) contact hole etching method and CMOS manufacturing method |
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| CN115410991A (en) * | 2022-09-16 | 2022-11-29 | 上海华力微电子有限公司 | Contact hole forming method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6787475B2 (en) * | 2001-09-06 | 2004-09-07 | Zhuxu Wang | Flash step preparatory to dielectric etch |
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2022
- 2022-12-27 CN CN202211683496.8A patent/CN115939030B/en active Active
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08222552A (en) * | 1995-02-17 | 1996-08-30 | Sony Corp | Plasma etching of silicon oxide based material layer |
| EP0813233A2 (en) * | 1996-06-12 | 1997-12-17 | Applied Materials, Inc. | Method of etching dielectric layer using a plasma generated from a mixture of flourohydrocarbon gas, NH3-genrating gas, and carbon-oxygen containing gas |
| KR20020001113A (en) * | 2000-06-26 | 2002-01-09 | 윤종용 | method for manufacturing semiconductor devices |
| CN101202243A (en) * | 2006-12-13 | 2008-06-18 | 上海华虹Nec电子有限公司 | Method for etching suspending type etch blocking layer contact hole in embedded flash memory device |
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| CN101894791A (en) * | 2009-05-18 | 2010-11-24 | 中芯国际集成电路制造(北京)有限公司 | Formation method of contact hole |
| CN103050433A (en) * | 2011-10-17 | 2013-04-17 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor contact hole structure and manufacturing method thereof |
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| CN103633106A (en) * | 2013-11-28 | 2014-03-12 | 上海华力微电子有限公司 | CMOS (complementary metal oxide semiconductor) contact hole etching method and CMOS manufacturing method |
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| CN115939030A (en) | 2023-04-07 |
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