CN115932526A - High-power module burn-in device - Google Patents
High-power module burn-in device Download PDFInfo
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- CN115932526A CN115932526A CN202211606110.3A CN202211606110A CN115932526A CN 115932526 A CN115932526 A CN 115932526A CN 202211606110 A CN202211606110 A CN 202211606110A CN 115932526 A CN115932526 A CN 115932526A
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Abstract
The invention discloses a high-power module aging device which mainly comprises a base, radiating fins arranged on the base, fixed pressing sheets arranged on the radiating fins, an axial flow fan, a temperature sensing device and a control box, wherein the axial flow fan, the temperature sensing device and the control box are arranged on the base, and the axial flow fan and the temperature sensing device are connected with the control box. The invention has simple integral structure and small volume, and is convenient to move and carry. Meanwhile, the invention can greatly improve the precision and the efficiency of the prior high-power module aging device through a specific circuit.
Description
Technical Field
The invention relates to a burn-in device, in particular to a high-power module burn-in device.
Background
At present, with the rapid development of the semiconductor industry, higher requirements are also put forward on the reliability of electronic components, and the reliability of electronic components is also a major challenge for electronic component manufacturers and detection laboratories. The existing high-power module aging technology still stays in a stage of completing the combination of a plurality of instruments and equipment such as a temperature acquisition system, a temperature regulation system and the like, the investment is large, the occupied space is large, and each high-power module cannot be accurately monitored and controlled. Therefore, the existing aging device for the high-power module cannot meet the current requirements of high precision, high efficiency and high precision.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a high-power module aging device.
In order to solve the technical problems, the invention provides the following technical scheme: a high-power module aging device mainly comprises a base, radiating fins arranged on the base, fixed pressing sheets arranged on the radiating fins, an axial flow fan, a temperature sensing device and a control box, wherein the axial flow fan, the temperature sensing device and the control box are arranged on the base, and the axial flow fan and the temperature sensing device are connected with the control box.
Furthermore, the temperature sensing device is composed of a temperature sensor fixing sleeve and a temperature sensor, the temperature sensor fixing sleeve penetrates through the base and the radiating fin, the top end of the temperature sensor fixing sleeve is fixedly connected with the radiating fin, and the bottom of the temperature sensor fixing sleeve is fixedly connected with the base; the temperature sensor is arranged in the temperature sensor fixing sleeve and is connected with the control box through a lead.
The control box comprises an integrated control chip U1, a digital display, a triode circuit, a crystal oscillator circuit, a resistor R3 connected in series between a pin a of the digital display and a pin P1.0 of the integrated control chip U1, a resistor R4 connected in series between a pin b of the digital display and a pin P1.1 of the integrated control chip U1, a resistor R5 connected in series between a pin c of the digital display and a pin P1.2 of the integrated control chip U1, a resistor R6 connected in series between a pin d of the digital display and a pin P1.3 of the integrated control chip U1, a resistor R7 connected in series between a pin e of the digital display and a pin P1.4 of the integrated control chip U1, a resistor R8 connected in series between a pin f of the digital display and a pin P1.5 of the integrated control chip U1, and a resistor R9 connected in series between a pin g of the digital display and a pin P1.6 of the integrated control chip U1, and a resistor R10 connected in series between a pin dp of the digital display and the integrated control chip U1; the triode circuit is connected between the integrated control chip U1 and the digital display in series, and the crystal oscillator circuit is connected with the integrated control chip U1.
The triode circuit is composed of a triode VT1, a triode VT2, a triode VT3, a resistor R11, a resistor R12 and a resistor R13, and the digital display is composed of a nixie tube A1, a nixie tube A2 and a nixie tube A3; the base electrode of the triode VT1 is connected with the P2.0 pin of the integrated control chip U1 through a resistor R11, the collector electrode of the triode VT1 is connected with the nixie tube A1, and the emitter electrode of the triode VT1 is connected with an external power supply VCC; the base electrode of the triode VT2 is connected with the P2.1 pin of the integrated control chip U1 through a resistor R12, the collector electrode of the triode is connected with the nixie tube A2, and the emitter electrode of the triode is connected with an external power supply VCC; the base electrode of the triode VT3 is connected with the P2.2 pin of the integrated control chip U1 after passing through the resistor R13, the collector electrode of the triode VT is connected with the nixie tube A3, and the emitter electrode of the triode VT is connected with the external power supply VCC.
The crystal oscillator circuit is composed of a switch S1, a resonator X1 connected in series between an XTAL1 pin and an XTAL2 pin of an integrated control chip U1, a capacitor C2 with one end connected with the XTAL2 pin of the integrated control chip U1 and the other end connected with the XTAL1 pin of the integrated control chip U1 through a capacitor C3, a capacitor C1 with one end connected with an external power VCC and the other end connected with a RST pin of the integrated control chip U1, and a resistor R2 with one end connected with the RST pin of the integrated control chip U1 and the other end grounded; the connection point of the capacitor C2 and the capacitor C3 is grounded; the switch S1 is connected in parallel to the capacitor C1.
The temperature sensor is an AD590 sensor, the voltage anode of the temperature sensor is connected with an external power supply VCC, and the voltage cathode of the temperature sensor is grounded after passing through a resistor R1; meanwhile, the voltage cathode of the temperature sensor is also connected with a P2.3 pin of the integrated control chip U1.
The input end of the axial fan is connected with the anode of an external power supply after passing through the potentiometer RP1, the output end of the axial fan is connected with the cathode of the external power supply, and meanwhile, a switch S2 is arranged on the adjusting knob of the potentiometer RP 1.
Preferably, the integrated control chip U1 is an AT89C51 single chip microcomputer.
Compared with the prior art, the invention has the advantages and beneficial effects that:
1. the invention has simple integral structure and small volume, and is convenient to move and carry.
2. The invention can greatly improve the precision and the efficiency of the prior high-power module burn-in device through a specific circuit.
Drawings
Fig. 1 is a schematic view of the overall structure of the present invention.
Fig. 2 is a schematic diagram of the internal circuit structure of the control box of the present invention.
FIG. 3 is a schematic circuit diagram of an axial fan according to the present invention.
Reference numbers in the above figures refer to: the device comprises a base, a cooling fin, an axial flow fan, a control box, a fixing pressing sheet, a screw, a temperature sensor and a temperature sensor fixing sleeve, wherein the base is 1, the cooling fin is 2, the axial flow fan is 3, the control box is 4, the fixing pressing sheet is 5, the screw is 6, and the temperature sensor is 7 and the temperature sensor fixing sleeve is 8.
Detailed Description
The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings, and those skilled in the art will appreciate that these descriptions are illustrative only, exemplary only, and should not be construed as limiting the scope of the present invention.
Examples
As shown in fig. 1, the aging device for high-power modules of the present invention is mainly composed of a base 1, a heat sink 2 fixed on the base 1 by a screw 6, a fixing pressing sheet 5 fixed on the heat sink 3 by a screw 6, and an axial fan 3, a temperature sensing device and a control box 4 arranged on the base 1.
Wherein, the temperature sensing device is composed of a temperature sensor fixing sleeve 8 and a temperature sensor 7. When in connection, the temperature sensor fixing sleeve 8 penetrates through the base 1 and the radiating fin 2, the top end of the temperature sensor fixing sleeve is fixedly connected with the radiating fin 2, and the bottom of the temperature sensor fixing sleeve is fixedly connected with the base 1; the temperature sensor 7 is arranged inside the temperature sensor fixing sleeve 8 and is connected with the control box 4 through a lead. Meanwhile, the axial flow fan 3 is also connected with the control box 4 through a wire.
The circuit structure of the control box 4 is shown in fig. 2, and includes an integrated control chip U1, a digital display, a triode circuit, a crystal oscillator circuit, and a plurality of resistors.
In order to ensure that the invention can be better realized, the integrated control chip U1 is preferably realized by an AT89C51 singlechip; the digital display is realized by adopting an LED digital display with 3 nixie tubes, namely the digital display is provided with three nixie tubes of a nixie tube A1, a nixie tube A2 and a nixie tube A3.
During connection, a resistor R3 is connected in series between a pin a of the digital display and a pin P1.0 of the integrated control chip U1, a resistor R4 is connected in series between a pin b of the digital display and the pin P1.1 of the integrated control chip U1, a resistor R5 is connected in series between a pin c of the digital display and a pin P1.2 of the integrated control chip U1, a resistor R6 is connected in series between a pin d of the digital display and a pin P1.3 of the integrated control chip U1, a resistor R7 is connected in series between a pin e of the digital display and a pin P1.4 of the integrated control chip U1, a resistor R8 is connected in series between a pin f of the digital display and a pin P1.5 of the integrated control chip U1, a resistor R9 is connected in series between a pin g of the digital display and a pin P1.6 of the integrated control chip U1, and a resistor R10 is connected in series between a pin dp of the digital display and a pin P1.7 of the integrated control chip U1. The resistances of the resistors R3-R10 are all 10K omega.
The triode circuit is composed of a triode VT1, a triode VT2, a triode VT3, a resistor R11, a resistor R12 and a resistor R13. When the digital tube is connected, the base electrode of the triode VT1 is connected with the P2.0 pin of the integrated control chip U1 after passing through the resistor R11, the collector electrode of the triode VT is connected with the digital tube A1, and the emitter electrode of the triode VT is connected with the external power supply VCC. The base electrode of the triode VT2 is connected with the P2.1 pin of the integrated control chip U1 through a resistor R12, the collector electrode of the triode is connected with the nixie tube A2, and the emitter electrode of the triode is connected with an external power supply VCC. The base electrode of the triode VT3 is connected with the P2.2 pin of the integrated control chip U1 through a resistor R13, the collector electrode of the triode VT is connected with the nixie tube A3, and the emitter electrode of the triode VT is connected with an external power supply VCC. The resistance values of the resistor R11, the resistor R12 and the resistor R13 are all 4.7K omega, and the triode VT1, the triode VT2 and the triode VT3 are all realized by PNP type S8550 triodes.
The crystal oscillator circuit is composed of a switch S1, a resonator X1, a capacitor C2, a capacitor C3, a resistor R2 and a switch S1. Wherein, the resonator X1 is a 10M resonator, and the values of the capacitor C2 and the capacitor C3 are both 30PF/16V.
During connection, resonator X1 is concatenated between integrated control chip U1's XTAL1 pin and XTAL2 pin, the one end of electric capacity C2 is connected with integrated control chip U1's XTAL2 pin, and the other end is connected with integrated control chip U1's XTAL1 pin behind electric capacity C3.
One end of the capacitor C1 is connected with an external power supply VCC, and the other end of the capacitor C1 is connected with a RST pin of the integrated control chip U1; one end of the resistor R2 is connected with the RST pin of the integrated control chip U1, and the other end of the resistor R2 is grounded. Meanwhile, the connection point of the capacitor C2 and the capacitor C3 is grounded, and the switch S1 is connected with the capacitor C1 in parallel.
The temperature sensor 7 is realized by an AD590 sensor, the positive voltage pole of the temperature sensor is connected with an external power supply VCC, and the negative voltage pole of the temperature sensor is grounded after passing through a resistor R1; meanwhile, the voltage cathode of the temperature sensor 7 is also connected with a pin P2.3 of the integrated control chip U1.
The circuit structure of the axial flow fan 3 is shown in fig. 3. The input end of the quasi-axial flow fan 3 is connected with the anode of an external power supply after passing through a potentiometer RP1, the output end of the quasi-axial flow fan is connected with the cathode of the external power supply, and meanwhile, a switch S2 is also arranged on an adjusting knob of the potentiometer RP 1.
When the testing device is used, the tested high-power module is arranged on the radiating fin 2 through the fixing pressing sheet 5, so that the bottom of the tested high-power module is tightly attached to the radiating fin 2, and the good contact between the tested high-power module and the temperature sensor 7 is ensured. An external power supply is used for applying rated power to the tested high-power module, the temperature sensor 7 is used for collecting temperature after the tested high-power module heats, and the temperature signal is converted into a voltage signal to be sent to the integrated control chip U1.
The integrated control chip U1 processes the received voltage signal and displays the voltage signal through a digital display. The switch S2 is adjusted according to the temperature displayed by the digital display, thereby achieving the purpose of temperature control. When the temperature display fails, the reset switch S1 is manually pressed, and the integrated control chip U1 enters an initialization state.
As described above, the present invention can be preferably realized.
Claims (8)
1. The aging device for the high-power module is characterized by mainly comprising a base (1), a radiating fin (2) arranged on the base (1), a fixed pressing sheet (5) arranged on the radiating fin (2), and an axial flow fan (3), a temperature sensing device and a control box (4) which are arranged on the base (1), wherein the axial flow fan (3) and the temperature sensing device are connected with the control box (4).
2. A high power module aging device according to claim 1, wherein the temperature sensing device is composed of a temperature sensor fixing sleeve (8) and a temperature sensor (7), the temperature sensor fixing sleeve (8) penetrates through the base (1) and the heat sink (2), the top end of the temperature sensor fixing sleeve is fixedly connected with the heat sink (2), and the bottom of the temperature sensor fixing sleeve is fixedly connected with the base (1); the temperature sensor (7) is arranged in the temperature sensor fixing sleeve (8) and is connected with the control box (4) through a lead.
3. The aging device for the high-power module according to claim 1 or 2, wherein the control box (4) comprises an integrated control chip U1, a digital display, a triode circuit, a crystal oscillator circuit, a resistor R3 connected in series between a pin a of the digital display and a pin P1.0 of the integrated control chip U1, a resistor R4 connected in series between a pin b of the digital display and a pin P1.1 of the integrated control chip U1, a resistor R5 connected in series between a pin c of the digital display and a pin P1.2 of the integrated control chip U1, a resistor R6 connected in series between a pin d of the digital display and a pin P1.3 of the integrated control chip U1, a resistor R7 connected in series between e of the digital display and a pin P1.4 of the integrated control chip U1, a resistor R8 connected in series between f pin of the digital display and a pin P1.5 of the integrated control chip U1, a resistor R9 connected in series between g of the digital display and a pin P1.6 of the integrated control chip U1, and a resistor R7 connected in series between f pin of the digital display and a pin P1.9 of the integrated control chip U1 and a resistor R10 of the integrated control chip U1; the triode circuit is connected between the integrated control chip U1 and the digital display in series, and the crystal oscillator circuit is connected with the integrated control chip U1.
4. The aging device for high-power modules as claimed in claim 3, wherein the triode circuit is composed of a triode VT1, a triode VT2, a triode VT3, a resistor R11, a resistor R12 and a resistor R13, and the digital display is composed of a nixie tube A1, a nixie tube A2 and a nixie tube A3; the base electrode of the triode VT1 is connected with the P2.0 pin of the integrated control chip U1 after passing through the resistor R11, the collector electrode of the triode VT1 is connected with the nixie tube A1, and the emitter electrode of the triode VT1 is connected with an external power supply VCC; the base electrode of the triode VT2 is connected with the P2.1 pin of the integrated control chip U1 through a resistor R12, the collector electrode of the triode is connected with the nixie tube A2, and the emitter electrode of the triode is connected with an external power supply VCC; the base electrode of the triode VT3 is connected with the P2.2 pin of the integrated control chip U1 through a resistor R13, the collector electrode of the triode VT is connected with the nixie tube A3, and the emitter electrode of the triode VT is connected with an external power supply VCC.
5. The aging device for the high-power module as claimed in claim 4, wherein the crystal oscillator circuit is composed of a switch S1, a resonator X1 connected in series between the XTAL1 pin and the XTAL2 pin of the integrated control chip U1, a capacitor C2 having one end connected to the XTAL2 pin of the integrated control chip U1 and the other end connected to the XTAL1 pin of the integrated control chip U1 via a capacitor C3, a capacitor C1 having one end connected to the VCC of the external power supply and the other end connected to the RST pin of the integrated control chip U1, and a resistor R2 having one end connected to the RST pin of the integrated control chip U1 and the other end connected to ground; the connection point of the capacitor C2 and the capacitor C3 is grounded; the switch S1 is connected in parallel to the capacitor C1.
6. The aging device for the high-power module as claimed in claim 4 or 5, wherein the temperature sensor (7) is an AD590 sensor, the positive voltage of which is connected with an external power supply VCC, and the negative voltage of which is grounded through a resistor R1; meanwhile, the voltage cathode of the temperature sensor (7) is also connected with a P2.3 pin of the integrated control chip U1.
7. The aging device for high power modules as claimed in claim 6, wherein the axial fan (3) has an input connected to the positive pole of the external power source via a potentiometer RP1 and an output connected to the negative pole of the external power source, and a switch S2 is provided on the adjusting knob of the potentiometer RP 1.
8. The high-power module aging device according to claim 7, wherein the integrated control chip U1 is an AT89C51 single chip microcomputer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211606110.3A CN115932526A (en) | 2022-12-14 | 2022-12-14 | High-power module burn-in device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211606110.3A CN115932526A (en) | 2022-12-14 | 2022-12-14 | High-power module burn-in device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115932526A true CN115932526A (en) | 2023-04-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211606110.3A Pending CN115932526A (en) | 2022-12-14 | 2022-12-14 | High-power module burn-in device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115932526A (en) |
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2022
- 2022-12-14 CN CN202211606110.3A patent/CN115932526A/en active Pending
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