CN115692324A - Integrated circuit triode and test method thereof - Google Patents

Integrated circuit triode and test method thereof Download PDF

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Publication number
CN115692324A
CN115692324A CN202211269477.0A CN202211269477A CN115692324A CN 115692324 A CN115692324 A CN 115692324A CN 202211269477 A CN202211269477 A CN 202211269477A CN 115692324 A CN115692324 A CN 115692324A
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Prior art keywords
triode
wall
base
resistance
multiplied
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CN202211269477.0A
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Chinese (zh)
Inventor
宋能
印鹏
印辉
傅蓠烨
周茂
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Shenzhen Lingsai Technology Co ltd
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Shenzhen Lingsai Technology Co ltd
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Priority to CN202211269477.0A priority Critical patent/CN115692324A/en
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Abstract

The invention discloses an integrated circuit triode and a test method thereof, and the integrated circuit triode comprises a triode component, wherein the triode component comprises a base component, a core body component is clamped on the outer wall of the top of the base component, the base component comprises a base, a bulge ring is integrally formed on the outer wall of the top of the base, arrangement grooves are formed in the outer walls of the two sides of the bulge ring, an elastic sheet is integrally formed on the inner wall of the bottom of the arrangement groove, a clamping block is integrally formed at the position, close to the top, of the outer wall of one side of the elastic sheet, and two springs are arranged between the outer wall of one side of the elastic sheet and the inner wall of one side of the arrangement groove through bolts. The invention has the beneficial effects that: when the triode is damaged and needs to be disassembled and assembled, the difficulty of disassembling and assembling between the core body assembly and the base assembly can be reduced by the structure formed by the elastic piece, the fixture block and the spring, and the triode packaging structure can be quickly disassembled and assembled, so that the undamaged structure can be conveniently stored subsequently, and the resource can be utilized.

Description

Integrated circuit triode and test method thereof
Technical Field
The invention relates to the technical field of triodes, in particular to an integrated circuit triode and a test method thereof.
Background
The integrated circuit is a miniaturized circuit, and adopts a certain process, and the components of transistor, resistor, capacitor, inductor and triode, etc. required in a circuit and its wiring are interconnected together, and made into a small or several small semiconductor wafers or medium substrates, then packaged in a tube shell to form the miniature structure with required circuit function.
If the notice number of authorizing is CN207852648U, authorize to announce day as 20180911's a waterproof steady voltage triode, including the triode main part, the triode fixed orifices has been seted up on the top surface of triode main part, the triode fixed orifices is circular structure, the surface of triode main part is provided with the main part line, the bottom of triode main part is provided with the triode base, the electrode steering groove has been seted up on the bottom surface of triode main part, the bottom of triode main part is located one side connection of triode base and is provided with the main part line, sets up the collecting electrode and the projecting pole of this triode into rotatable structure, through rotating its electrode, it is more convenient when connecting fixedly, and the suitability is higher, has improved the practicality of triode, and the line that sets up on triode main part surface can prevent the landing when using, produces the damage to the triode, also can improve the surface area of triode to improve the radiating effect of triode, improve the practicality of this triode.
In the prior art, the triode shell and the internal pn structure are generally assembled together through bolts or glue, which results in higher difficulty in subsequent disassembly, and thus, it is urgently needed to design an integrated circuit triode and a testing method thereof to solve the above problems.
Disclosure of Invention
The invention aims to provide an integrated circuit triode and a test method thereof, which aim to solve the defects in the prior art.
In order to achieve the above purpose, the invention provides the following technical scheme:
the utility model provides an integrated circuit triode, includes the triode subassembly, the triode subassembly includes base subassembly, the joint has the core subassembly on the outer wall of base subassembly top, base subassembly includes the base, integrated into one piece has protruding ring on the outer wall of base top, and has all seted up the resettlement groove on the outer wall of protruding ring both sides, integrated into one piece has the flexure strip on the resettlement groove bottom inner wall, and flexure strip one side outer wall is close to top department integrated into one piece and has the fixture block, install two springs through the bolt between flexure strip one side outer wall and the resettlement groove one side inner wall.
Furthermore, three plug connectors distributed in an equidistant structure are inserted into the inner wall of the bottom of the base, and pins are integrally formed on the outer wall of the bottom of the plug connectors.
Furthermore, the core body assembly comprises a box shell, an insertion groove is formed in the position, close to the bottom, of the inner wall of the side face of the box shell, a sealing gasket is bonded inside the insertion groove, and the protruding ring is inserted inside the sealing gasket.
Furthermore, the outer walls of the two sides of the box shell are provided with limiting holes close to the bottom, and the clamping blocks are clamped in the limiting holes.
Furthermore, a heat dissipation assembly is inserted into the inner wall of the top of the box shell, a core body which is in contact with the heat dissipation assembly is inserted into the box shell, and the bottom end of the core body is inserted into the base and the protruding ring.
Furthermore, three plug holes distributed in an equidistant structure are formed in the outer wall of one side of the core body, and the plug connectors are plugged in the plug holes.
Further, the heat dissipation assembly comprises a vapor chamber, and liquid ammonia is filled in the vapor chamber.
Furthermore, a shell is welded on the outer wall of the top of the soaking plate and is communicated with the soaking plate, and through holes distributed in an equidistant structure are formed in the outer wall of one side of the shell.
Further, the case shell includes the metal level, the outside parcel of metal level has the plastic layer, and the spraying has fire-retardant layer on one of them plastic layer one side outer wall.
A method for testing an integrated circuit triode comprises the following steps:
s1, preliminary preparation: preparing a measuring tool universal meter and a corresponding triode according to the measuring requirement;
s2, starting measurement:
s2.1, measuring interelectrode resistance: the multimeter was placed in the R100 or R1K position and tested according to six different connections for red and black pens. The forward resistance values of the emitter junction and the collector junction are relatively low, and the resistance values measured by other four methods are high and are about hundreds of kilohms to infinity. However, the inter-electrode resistance of the silicon material triode is much larger than that of the dirt material triode no matter the silicon material triode is low-resistance or high-resistance;
s2.2. Numerical measurement of iceo: the measuring range of the resistance of the multimeter is generally R multiplied by 100 or R multiplied by 1K, the black meter tube is connected with the e pole and the red meter pen is connected with the c pole for the PNP tube, and the black meter pen is connected with the c pole and the red meter pen is connected with the e pole for the NPN type triode. The larger the resistance measured, the better. The larger the resistance value between e and c is, the smaller the ICEO of the tube is; conversely, the smaller the measured resistance value, the larger the ICEO of the measured tube. Generally speaking, the resistances of the medium and small power silicon tubes and the germanium material low frequency tube are respectively above hundreds of kilo-ohms, dozens of kilo-ohms and dozens of kilo-ohms, if the resistance is very small or the pointer of the multimeter shakes back and forth during the test, the ICEO is very large, and the performance of the tube is unstable;
s2.3, measuring the amplification capacity: firstly, a multimeter function switch is switched to an R multiplied by 100 or R multiplied by 1K gear, a range switch is switched to an ADJ position, red and black meter pens are in short circuit, a zero setting knob is adjusted to enable a pointer of the multimeter to be indicated to be zero, then the range switch is switched to an hFE position, the two short-circuited meter pens are separated, a tested triode is inserted into a test socket, and the amplification factor of a pipe can be read from an hFE scale mark;
s2.4, judging a base electrode, an electrode c and an emitter e: a multimeter R multiplied by 100 or R multiplied by 1k is used for measuring the positive and reverse resistance values between every two poles of three electrodes of the triode. When a first meter pen is connected with one electrode, and a second meter pen is successively contacted with the other two electrodes to measure low resistance, the electrode connected with the first meter pen is a base electrode b, then the universal meter is placed in an R multiplied by 100 or R multiplied by 1K block, the base electrode b of the red meter pen is contacted with the other two pins respectively by using the black meter pen, the two measured resistance values are larger and smaller, and in one measurement of small resistance value, the pin connected with the black meter pen is a collector electrode; in one measurement with larger resistance, the pin connected with the black pen is the emitter.
In the technical scheme, according to the integrated circuit triode and the testing method thereof provided by the invention, (1) when the triode is damaged and needs to be disassembled and assembled, the difficulty of disassembling and assembling the core body assembly and the base assembly can be reduced by the structure formed by the elastic part, the clamping block and the spring, and the triode packaging structure can be quickly disassembled and assembled, so that the undamaged structure can be conveniently stored in the follow-up process, and the utilization of resources is realized; (2) According to the heat dissipation assembly designed by the invention, when the triode is used, liquid ammonia in the heat dissipation assembly can be heated and evaporated, and then the liquid ammonia is condensed after heat is emitted from the top of the shell, so that the heat dissipation efficiency of the triode is improved compared with the original triode heat dissipation mode in the process; (3) The triode testing method designed by the invention can measure all the parameters of the triode, the measured triode completely meets the circuit requirements, and the integrated circuit can work normally under the condition of inputting different voltages.
Drawings
In order to more clearly illustrate the embodiments of the present application or technical solutions in the prior art, the drawings required in the embodiments will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and other drawings can be obtained by those skilled in the art according to these drawings.
Fig. 1 is a schematic diagram of a three-dimensional structure provided in an embodiment of an integrated circuit triode and a testing method thereof according to the present invention.
Fig. 2 is a schematic structural diagram of a core body assembly provided in an embodiment of an integrated circuit triode and a testing method thereof according to the present invention.
Fig. 3 is a schematic diagram of a base assembly structure provided in an embodiment of an integrated circuit transistor and a testing method thereof according to the present invention.
Fig. 4 is a schematic diagram of a core body top view structure provided in an embodiment of an integrated circuit triode and a testing method thereof according to the present invention.
Fig. 5 is a schematic structural diagram of a heat dissipation assembly according to an embodiment of an integrated circuit transistor and a testing method thereof.
Fig. 6 is a schematic view of a case material structure provided in an embodiment of an integrated circuit triode and a testing method thereof according to the present invention.
Fig. 7 is a schematic diagram of a structure a provided in an embodiment of an integrated circuit transistor and a testing method thereof according to the present invention.
Fig. 8 is a flowchart of a method for testing an integrated circuit transistor according to an embodiment of the present invention.
Description of the reference numerals:
the heat dissipation device comprises a triode component 1, a core component 2, a base component 3, a box shell 4, an insertion groove 5, a sealing gasket 6, a heat dissipation component 7, a limiting hole 8, a core body 9, an insertion hole 10, a vapor chamber 11, a shell 12, a through hole 13, liquid ammonia 14, a base 15, a protruding ring 16, pins 17, an insertion connector 18, a placement groove 19, a spring 20, an elastic sheet 21, a clamping block 22, a metal layer 23, a plastic layer 24 and a flame-retardant layer 25.
Detailed Description
In order to make the technical solutions of the present invention better understood, those skilled in the art will now describe the present invention in further detail with reference to the accompanying drawings.
As shown in fig. 1 to 7, an integrated circuit triode and a testing method thereof according to an embodiment of the present invention includes a triode component 1, the triode component 1 includes a base component 3, a core component 2 is clamped on an outer wall of a top portion of the base component 3, the base component 3 includes a base 15, a protruding ring 16 is integrally formed on an outer wall of a top portion of the base 15, mounting grooves 19 are respectively formed on outer walls of two sides of the protruding ring 16, an elastic sheet 21 is integrally formed on an inner wall of a bottom portion of the mounting groove 19, a clamping block 22 is integrally formed on an outer wall of one side of the elastic sheet 21 near the top portion, and two springs 20 are mounted between an outer wall of one side of the elastic sheet 21 and an inner wall of one side of the mounting groove 19 through bolts.
Specifically, in this embodiment, including triode component 1, triode component 1 includes base subassembly 3, the joint has core subassembly 2 on the outer wall of base subassembly 3 top, base subassembly 3 includes base 15, integrated into one piece has protruding ring 16 on the outer wall of base 15 top, protruding ring 16 is convenient for link together for core subassembly 2 and base subassembly 3 and fix a position, and all seted up on the outer wall of protruding ring 16 both sides place groove 19, integrated into one piece flexure strip 21 on the inner wall of place groove 19 bottom, flexure strip 21 is made by elastic material such as sheetmetal, and flexure strip 21 one side outer wall is close to top department integrated into one piece and has fixture block 22, fixture block 22 can peg graft under the flexure strip 21 effect on core subassembly 2, install two spring 20 through the bolt between flexure strip 21 one side outer wall and place groove 19 one side inner wall, spring 20 is convenient for make flexure strip 21 can pop out from place groove 19 is inside when protruding ring 16 inserts core subassembly 2, make fixture block 22 joint on case shell 4, make core subassembly 2 and base subassembly 2 fix together.
According to the integrated circuit triode provided by the invention, when the triode is damaged and needs to be disassembled and assembled, the difficulty in disassembling and assembling the core body assembly 2 and the base assembly 3 can be reduced by the structure formed by the elastic part 21, the fixture block 22 and the spring 20, and the triode packaging structure can be quickly disassembled and assembled, so that the undamaged structure can be stored conveniently, and the resource utilization can be realized.
In another embodiment of the present invention, as shown in fig. 3, three connectors 18 are inserted into the bottom inner wall of the base 15 and distributed in an equidistant structure, the connectors 18 facilitate the pins 17 to connect with the core 9, and the pins 17 are integrally formed on the bottom outer wall of the connectors 18, and the pins 17 facilitate the transistor to be soldered on the ic board.
In another embodiment provided by the invention, as shown in fig. 2, the core assembly 2 comprises a box shell 4, an insertion groove 5 is formed in the position, close to the bottom, of the inner wall of the side surface of the box shell 4, a sealing gasket 6 is adhered inside the insertion groove 5, the sealing gasket 6 can improve the sealing performance between a base 15 and the box shell 4, and a convex ring 16 is inserted inside the sealing gasket 6.
In another embodiment provided by the invention, as shown in fig. 1-2, the outer walls of the two sides of the box shell 4 near the bottom are respectively provided with a limiting hole 8, the limiting holes 8 are convenient for clamping a fixture block 22 on the box shell 4, so that the base 15 is connected with the box shell 4, and the fixture block 22 is clamped in the limiting holes 8.
In another embodiment of the present invention, as shown in fig. 3 and 5, a heat dissipation assembly 7 is inserted into an inner wall of a top portion of the box housing 4, the heat dissipation assembly 7 can accelerate heat dissipation of the triode, a core 9 in contact with the heat dissipation assembly 7 is inserted into the box housing 4, the core 9 is a pn structure inside the triode, and a bottom end of the core 9 is inserted into the base 15 and the raised ring 16.
In another embodiment provided by the present invention, as shown in fig. 4, three plug holes 10 distributed in an equidistant structure are formed in an outer wall of one side of the core 9, and the plug holes 10 facilitate the plug-in unit 18 to be plugged in the core 9, so that the pins 17 are connected with the core 9, and the plug-in unit 18 is plugged in the plug holes 10.
In another embodiment provided by the present invention, as shown in fig. 5, the heat dissipation assembly 7 includes a vapor chamber 11, the vapor chamber 11 is convenient for carrying liquid ammonia 14, the vapor chamber 11 is filled with liquid ammonia 14, the liquid ammonia 14 has a lower boiling point and a lower melting point, and is evaporated after being heated and then condensed when being cooled, and a large amount of heat can be dissipated during this process, so as to improve the heat dissipation efficiency of the triode.
In another embodiment of the present invention, as shown in fig. 5, a shell 12 is welded on the outer wall of the top of the soaking plate 11, the shell 12 facilitates condensation of liquid ammonia 14 that is evaporated quickly, the shell 12 is communicated with the soaking plate 11, through holes 13 distributed in an equidistant structure are formed on the outer wall of one side of the shell 12, and the through holes 13 can increase the contact area between air and the shell 12.
In another embodiment provided by the invention, as shown in fig. 6, the box shell 4 comprises a metal layer 23, the metal layer 23 is matched with a plastic layer 24 to improve the strength of the box shell 4 and avoid the possibility that the box shell 4 is exploded when the core body 9 is short-circuited, the plastic layer 24 is wrapped outside the metal layer 23, and a flame retardant layer 25 is sprayed on the outer wall of one side of one of the plastic layers 24, and the flame retardant layer 25 can improve the flame retardant capability of the inner wall of the box shell 4.
As shown in fig. 8, a method for testing an integrated circuit transistor includes the following steps:
s1, preliminary preparation: preparing a measuring tool multimeter and a corresponding triode according to the measuring requirement;
s2, starting measurement:
s2.1, measuring interelectrode resistance: the multimeter was placed in the R100 or R1K position and tested according to six different connections for red and black pens. The forward resistance values of the emitter junction and the collector junction are relatively low, and the resistance values measured by other four methods are high and are about hundreds of kilohms to infinity. However, the inter-electrode resistance of the silicon material triode is much larger than that of the dirt material triode no matter the silicon material triode is low-resistance or high-resistance;
s2.2. Numerical measurement of iceo: the measuring range of the resistance of the multimeter is generally R multiplied by 100 or R multiplied by 1K, the black meter tube is connected with the e pole and the red meter pen is connected with the c pole for the PNP tube, and the black meter pen is connected with the c pole and the red meter pen is connected with the e pole for the NPN type triode. The larger the resistance measured, the better. The larger the resistance value between e and c is, the smaller the ICEO of the tube is; conversely, the smaller the measured resistance value, the larger the ICEO of the measured tube. Generally speaking, the resistance values of a medium-power silicon tube, a low-power silicon tube and a germanium material low-frequency tube are respectively hundreds of kilo-ohms, dozens of kilo-ohms and more than dozens of kilo-ohms, and if the resistance values are small or a multimeter pointer shakes back and forth during testing, the ICEO is large and the performance of the tubes is unstable;
s2.3, measuring the amplification capacity: firstly, a multimeter function switch is switched to an R multiplied by 100 or R multiplied by 1K gear, a range switch is switched to an ADJ position, red and black meter pens are in short circuit, a zero setting knob is adjusted to enable a pointer of the multimeter to be indicated to be zero, then the range switch is switched to an hFE position, the two short-circuited meter pens are separated, a tested triode is inserted into a test socket, and the amplification factor of a pipe can be read from an hFE scale mark;
s2.4, judging a base electrode, an electrode c and an emitter e: a multimeter R multiplied by 100 or R multiplied by 1k is used for measuring the positive and reverse resistance values between every two poles of three electrodes of the triode. When a first meter pen is connected with one electrode, and a second meter pen is successively contacted with the other two electrodes to measure low resistance, the electrode connected with the first meter pen is a base electrode b, then the universal meter is placed in an R multiplied by 100 or R multiplied by 1K block, the base electrode b of the red meter pen is contacted with the other two pins respectively by using the black meter pen, the two measured resistance values are larger and smaller, and in one measurement of small resistance value, the pin connected with the black meter pen is a collector electrode; in one measurement with larger resistance value, the pin connected with the black list pen is the emitter.
The working principle is as follows: when using this equipment, can install the pn structure inside case shell 4 earlier, then install base subassembly 3 on core subassembly 2 through the cooperation of bulge loop 16 with inserting groove 5, can be when bulge loop 16 inserts inserting groove 5 inside completely this moment, elastic component 21 can receive the extrusion under spring 20's effect, make fixture block 22 peg graft inside spacing hole 8, spacing fixed between core subassembly 2 and the base subassembly 3 has been accomplished, and when connecting core subassembly 2 and base subassembly 3 together, plug connector 18 can link together through inserting hole 10 and core 9, thereby accomplish pin 17 and core 9's being connected, later when the triode operates, the inside liquid ammonia 14 of soaking plate 11 can be heated and evaporate, then flow and 12 tops of casing cool and condense and give out the heat, thereby accelerate this triode heat dissipation.
While certain exemplary embodiments of the present invention have been described above by way of illustration only, it will be apparent to those of ordinary skill in the art that the described embodiments may be modified in various different ways without departing from the spirit and scope of the present invention. Accordingly, the drawings and description are illustrative in nature and are not to be construed as limiting the scope of the invention.

Claims (10)

1. An integrated circuit triode, comprising a triode component (1), characterized in that: triode subassembly (1) includes base subassembly (3), the joint has core subassembly (2) on base subassembly (3) top outer wall, base subassembly (3) includes base (15), integrated into one piece has protruding ring (16) on base (15) top outer wall, and has all seted up on protruding ring (16) both sides outer wall and has settled groove (19), integrated into one piece has flexible piece (21) on settling groove (19) bottom inner wall, and just flexible piece (21) one side outer wall is close to top department integrated into one piece and has fixture block (22), install two spring (20) through the bolt between flexible piece (21) one side outer wall and settling groove (19) one side inner wall.
2. The triode according to claim 1, wherein the base (15) has three connectors (18) inserted into the bottom wall of the base in an equidistant configuration, and the pins (17) are integrally formed on the bottom wall of the connectors (18).
3. The triode according to claim 2, wherein the core assembly (2) comprises a box housing (4), a plug-in groove (5) is formed in the inner wall of the side surface of the box housing (4) near the bottom, a sealing gasket (6) is bonded inside the plug-in groove (5), and the raised ring (16) is plugged inside the sealing gasket (6).
4. The triode according to claim 3, wherein the outer walls of the two sides of the box shell (4) near the bottom are provided with limit holes (8), and the clamping block (22) is clamped in the limit holes (8).
5. The triode according to claim 3, wherein a heat dissipation component (7) is inserted into the inner wall of the top of the box housing (4), a core (9) which is in contact with the heat dissipation component (7) is inserted into the box housing (4), and the bottom end of the core (9) is inserted into the base (15) and the raised ring (16).
6. The triode of claim 5, wherein the core (9) has three insertion holes (10) formed in an outer wall thereof at one side thereof, and the insertion member (18) is inserted into the insertion holes (10).
7. An integrated circuit triode according to claim 5, wherein the heat dissipation component (7) comprises a vapor chamber (11), and the vapor chamber (11) is filled with liquid ammonia (14).
8. The triode of claim 7, wherein the outer wall of the top of the soaking plate (11) is welded with a shell (12), the shell (12) and the soaking plate (11) are communicated with each other, and the outer wall of one side of the shell (12) is provided with through holes (13) distributed in an equidistant structure.
9. An integrated circuit transistor according to claim 3, wherein the housing (4) comprises a metal layer (23), the metal layer (23) is externally wrapped with a plastic layer (24), and a flame retardant layer (25) is sprayed on the outer wall of one side of the plastic layer (24).
10. A method of testing an integrated circuit transistor comprising an integrated circuit transistor as claimed in any of claims 1 to 9, comprising the steps of:
s1, preliminary preparation: preparing a measuring tool universal meter and a corresponding triode according to the measuring requirement;
s2, starting measurement:
s2.1, measuring interelectrode resistance: the multimeter was placed in an R × 100 or R × 1K position and tested according to six different connections with a red or black stylus. The forward resistance values of the emitter junction and the collector junction are relatively low, and the resistance values measured by other four methods are high and are about hundreds of kilohms to infinity. However, the inter-electrode resistance of the silicon material triode is much larger than that of the dirt material triode no matter the silicon material triode is low-resistance or high-resistance;
s2.2. Icoo numerical measurement: the measuring range of the resistance of the multimeter is generally R multiplied by 100 or R multiplied by 1K, the black meter tube is connected with the e pole and the red meter pen is connected with the c pole for the PNP tube, and the black meter pen is connected with the c pole and the red meter pen is connected with the e pole for the NPN type triode. The larger the resistance measured, the better. The larger the resistance value between e and c is, the smaller the ICEO of the tube is; conversely, the smaller the measured resistance value, the larger the ICEO of the measured tube. Generally speaking, the resistance values of a medium-power silicon tube, a low-power silicon tube and a germanium material low-frequency tube are respectively hundreds of kilo-ohms, dozens of kilo-ohms and more than dozens of kilo-ohms, and if the resistance values are small or a multimeter pointer shakes back and forth during testing, the ICEO is large and the performance of the tubes is unstable;
s2.3, measuring the amplification capacity: firstly, a multimeter function switch is switched to an R multiplied by 100 or R multiplied by 1K gear, a range switch is switched to an ADJ position, red and black meter pens are in short circuit, a zero setting knob is adjusted to enable a pointer of the multimeter to be indicated to be zero, then the range switch is switched to an hFE position, the two short-circuited meter pens are separated, a tested triode is inserted into a test socket, and the amplification factor of a pipe can be read from an hFE scale mark;
s2.4, judging a base electrode, an electrode c and an emitter e: a multimeter R multiplied by 100 or R multiplied by 1k is used for measuring the positive and reverse resistance values between every two poles of three electrodes of the triode. When a first meter pen is connected with one electrode, and a second meter pen is successively contacted with the other two electrodes to measure low resistance, the electrode connected with the first meter pen is a base electrode b, then the universal meter is placed in an R multiplied by 100 or R multiplied by 1K block, the base electrode b of the red meter pen is contacted with the other two pins respectively by using the black meter pen, the two measured resistance values are larger and smaller, and in one measurement of small resistance value, the pin connected with the black meter pen is a collector electrode; in one measurement with larger resistance value, the pin connected with the black list pen is the emitter.
CN202211269477.0A 2022-10-14 2022-10-14 Integrated circuit triode and test method thereof Pending CN115692324A (en)

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CN202211269477.0A CN115692324A (en) 2022-10-14 2022-10-14 Integrated circuit triode and test method thereof

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117471268A (en) * 2023-12-28 2024-01-30 深圳市伟鼎自动化科技有限公司 Semiconductor device testing apparatus and method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117471268A (en) * 2023-12-28 2024-01-30 深圳市伟鼎自动化科技有限公司 Semiconductor device testing apparatus and method
CN117471268B (en) * 2023-12-28 2024-04-05 深圳市伟鼎自动化科技有限公司 Semiconductor device testing apparatus and method

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