CN115910954A - Micro-channel radiator-based packaging structure of microwave power device and manufacturing method - Google Patents
Micro-channel radiator-based packaging structure of microwave power device and manufacturing method Download PDFInfo
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- CN115910954A CN115910954A CN202211356642.6A CN202211356642A CN115910954A CN 115910954 A CN115910954 A CN 115910954A CN 202211356642 A CN202211356642 A CN 202211356642A CN 115910954 A CN115910954 A CN 115910954A
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Abstract
The invention provides a micro-channel radiator-based packaging structure of a microwave power device and a preparation method thereof, belonging to the technical field of microelectronic packaging. The metal-based micro-channel radiator comprises a micro-channel carrier plate, a refrigerant inlet pipe and a refrigerant outlet pipe; the micro-channel carrier plate is internally provided with a micro-channel, a refrigerant inlet pipe and a refrigerant outlet pipe are connected with the inlet and the outlet of the micro-channel, the micro-channel carrier plate is fixed on the bottom plate, and the refrigerant inlet pipe and the refrigerant outlet pipe are exposed outside the microwave packaging tube shell. The chip and the circuit module are packaged on the micro-channel carrier plate. The chip and the circuit module are directly assembled on the micro-channel carrier plate, so that the heat conductivity, the machinability and the electric conductivity can be realized, and the heat dissipation effect of the microwave packaging tube shell is improved.
Description
Technical Field
The invention belongs to the technical field of microelectronic packaging, and particularly relates to a packaging structure of a microwave power device based on a micro-channel radiator and a manufacturing method of the packaging structure.
Background
With the development of microwave communication, radar, and high power microwave energy system technologies, the demand for microwave power is increasing continuously. The power of the solid-state pulse microwave transmitting circuit is from watt level to kilowatt level or even ten thousand watt level, in addition, under the conditions of wide duty ratio and continuous wave working application, the total power dissipation is increased, and the miniaturization becomes the development trend of electronic systems, and the miniaturized electronic systems are necessarily challenged by high power density. The demands of high power and miniaturization make the heat dissipation problem increasingly prominent. The heat flux density of the GaN chip heat source reaches 1000W/cm 2 The increase in device temperature can cause a decrease in reliability of the electronic device, and the failure rate doubles for every 10 ℃ increase in temperature according to arrhenius' law. Effective heat dissipation becomes a bottleneck for further improving system functions and performance.
The traditional microwave power device is packaged by adopting a metal box body structure or an HTCC ceramic-based packaging structure. In order to improve the heat dissipation performance, the base substrate with oxygen-free copper or CPC sandwich structure with higher conductivity is used as the heat dissipation metal carrier plate of the microwave power chip. AlN, alSi and SiCAl with high thermal conductivity are also used as dielectric materials for manufacturing the package. Materials such as graphene, diamond copper, etc. have also become interesting heat sink materials. The materials are packaged to play a certain role in reducing the junction temperature of the chip and improving the thermal reliability of the device.
As for microwave packaging, the application of the high thermal conductivity material is mainly used for soaking, namely, heat generated by an active region of a chip is diffused to a larger area as soon as possible and is uniformly led out, so that the junction temperature of a device is reduced. The thickness of the substrate material has a large influence on the heat dissipation performance due to the limitation of the temperature diffusion distribution characteristics, and the thickness of the substrate is reduced as much as possible in order to conduct the heat to the heat sink below the package substrate. However, under the condition that the contact thermal resistance between the thin substrate and the tube shell heat sink is poor, a larger cavity is generated, so that the heat dissipation failure of the chip is easily caused, and the mechanical reliability of the package is reduced; the increase of the thickness of the substrate can realize the improvement of the transverse heat dissipation capability, is beneficial to transversely diffusing the point heat source to the substrate, but increases the longitudinal thermal resistance, so that the overall thermal resistance of the package is increased. For the application of high-power microwave packaging, the core is how to conduct out higher heat, and if the heat conductivity of the carrier plate under the chip is simply increased, the heat dissipation problem faced by the large increase of the power magnitude or the power density cannot be fundamentally solved.
The conventional liquid cooling mode is mostly a heat pipe mode, low-boiling point substance liquid is filled in the heat pipe, the liquid is heated at a heat source, then is converted into a gaseous state at an interface of an evaporation section, and is condensed at the far end of the heat source to be converted into liquid, so that heat is transferred away. In application, the microwave package tube shell is directly mounted on the heat pipe radiating substrate by using a screw or welding mode, so that the radiating capacity of the system is improved, the radiating problem of many applications can be solved, and the radiating mode can solve the radiating application of a power device with hundreds of watts. If the power density of the chip in the package of the tube shell is further improved, because the heat on the chip is to pass through the thermal resistance of the chip bottom-solder-the tube shell base-the interface of the tube shell and the heat dissipation carrier plate-the heat dissipation channel of the material of the heat pipe carrier plate, the thermal resistance between the chip and the heat dissipation fluid in the flow channel is a decisive factor for determining the temperature rise, the thermal resistance of each part is an accumulation process to form a fixed thermal flow channel, and the temperature rise of the chip is determined by the channel, so that the limitation of the heat conduction power density is determined, and the further improvement of the heat dissipation performance is difficult to realize.
Disclosure of Invention
The embodiment of the invention provides a micro-channel radiator-based packaging structure and a manufacturing method of a microwave power device, and aims to solve the problem that the existing high-power microwave power device is poor in radiating effect.
In order to achieve the above object, the first aspect of the present invention employs the following technical solutions: the utility model provides a packaging structure of microwave power device based on microchannel radiator, includes:
the microwave packaging pipe shell comprises a bottom plate, a wall body fixedly arranged on the bottom plate and a cover plate packaged on the wall body;
the metal-based micro-channel radiator comprises a micro-channel carrier plate, a refrigerant inlet pipe and a refrigerant outlet pipe; a micro-channel is arranged in the micro-channel carrier plate, the refrigerant inlet pipe and the refrigerant outlet pipe are connected to the inlet and the outlet of the micro-channel, the micro-channel carrier plate is fixed on the bottom plate, and the refrigerant inlet pipe and the refrigerant outlet pipe are exposed outside the microwave packaging tube shell; and the chip and the circuit module are packaged on the micro-channel carrier plate.
With reference to the first aspect, in a possible implementation manner, a sunken mounting groove is formed in the bottom plate, an inlet hole and an outlet hole are formed in the mounting groove, the microchannel support plate is sunken in the mounting groove, and the refrigerant inlet pipe and the refrigerant outlet pipe penetrate out of the inlet hole and the outlet hole.
With reference to the first aspect, in a possible implementation manner, a window is disposed on the bottom plate, a limiting step is disposed on the window, and the micro flow channel support plate is sunk on the limiting step.
With reference to the first aspect, in one possible implementation manner, a nickel plating layer and a gold plating layer are sequentially disposed on the surface of the micro flow channel carrier plate.
With reference to the first aspect, in a possible implementation manner, the nickel plating layer has a thickness of 3um to 20um, and the gold plating layer has a thickness of 0.5um to 3um.
In a second aspect, an embodiment of the present invention further provides a method for manufacturing a package structure, where the package structure of a microwave power device based on a micro channel heat sink is manufactured, and the manufacturing method includes:
manufacturing a micro-channel in a substrate by adopting a micro-nano processing technology to form a micro-channel support plate;
respectively fixing a refrigerant inlet pipe and a refrigerant outlet pipe on an outlet and an inlet of the micro-channel support plate to form a metal-based micro-channel radiator;
electroplating a nickel plating layer and a gold plating layer on the micro-channel carrier plate;
welding the metal-based micro-channel radiator on a bottom plate of a microwave packaging tube shell;
the chip and the circuit module are arranged on the micro-channel carrier plate;
and a cover plate is packaged on the wall body of the microwave packaging tube shell.
With reference to the second aspect, in one possible implementation manner, the material of the substrate is a copper-based material, an aluminum-based material, or a ceramic material.
With reference to the second aspect, in one possible implementation, the copper-based material includes oxygen-free copper, brass, or copper-molybdenum copper-copper.
With reference to the second aspect, in a possible implementation manner, the microchannel carrier is soldered to the bottom plate of the microwave package case by using gold-tin or gold-germanium solder, a solder ring is used for reflow soldering during soldering, and the fixture applies a certain pressure to the microchannel radiator and the microwave package case during reflow soldering.
With reference to the second aspect, in a possible implementation manner, the cover plate is packaged on the wall of the microwave package tube shell by using parallel seal welding, laser seal welding or sealant.
Compared with the prior art, the micro-channel radiator-based packaging structure and the manufacturing method of the microwave power device have the beneficial effects that: the metal-based micro-channel radiator is assembled on the bottom plate of the packaging tube shell, the chip and the circuit module are assembled on the micro-channel carrier plate, ideal combination of heat conductivity, machinability and electric conductivity can be realized based on the metal-based micro-channel radiator, and the heat dissipation effect of the microwave packaging tube shell can be improved. The metal-based micro-channel radiator can realize micro-channels with the magnitude of tens of microns by using a micro-nano additive or etching technology, and can realize the molding of a multi-layer radiating structure by using a metal bonding process; in addition, the surface of the micro-channel carrier plate can form an interface material better than that of a chip assembly process through an electroplating process.
According to the invention, a microwave packaging technology and a micro-nano processing technology are combined, a metal-based micro-channel radiator is manufactured by the micro-nano processing technology to replace a traditional chip mounting base packaged by microwaves, and a chip heat source is directly assembled on a metal surface of the metal-based micro-channel radiator, so that a heat flow path from chip heating to a heat conducting medium is shortened to the maximum extent, and the maximum exertion of heat dissipation capacity is realized.
Drawings
Fig. 1 is a first schematic diagram illustrating an explosion structure of a packaging structure of a microwave power device based on a micro-channel heat sink according to an embodiment of the present invention;
fig. 2 is an exploded schematic diagram (top view) of the packaging structure of the micro-channel heat sink-based microwave power device provided in fig. 1;
fig. 3 is an exploded schematic view (bottom view) of the micro-channel heat sink-based microwave power device package structure shown in fig. 1;
fig. 4 is a schematic perspective view (bottom view) of the micro-channel heat sink-based microwave power device package structure shown in fig. 1;
FIG. 5 is a perspective view of the base plate shown in FIG. 1 in a top view;
FIG. 6 is a perspective view of the base plate shown in FIG. 1 in a bottom orientation;
fig. 7 is a schematic diagram of an explosion structure of the micro flow channel heat sink-based packaging structure of the microwave power device according to the embodiment of the present invention (soldering glass insulator);
fig. 8 is a schematic diagram of an explosion structure of a packaging structure of a microwave power device based on a micro flow channel heat sink according to an embodiment of the present invention;
FIG. 9 is a top perspective view of the base plate shown in FIGS. 7 and 8;
FIG. 10 is a bottom perspective view of the base plate shown in FIGS. 7 and 8;
FIG. 11 is a schematic perspective view of a metal-based microchannel heat sink according to an embodiment of the present invention;
fig. 12 is a schematic top view of a package structure of a micro-channel heat sink-based microwave power device according to various embodiments of the present invention;
fig. 13 is a schematic top view of the micro flow channel heat sink-based microwave power device package structure according to the embodiments of the present invention;
fig. 14 is a schematic bottom view of the assembled package structure of the micro-channel heat sink-based microwave power device according to the embodiments of the present invention;
description of the reference numerals:
1. a metal-based microchannel heat sink; 11. a microchannel support plate; 12. a refrigerant inlet pipe; 13. a refrigerant outlet pipe; 2. a soldering tin ring; 3. a wall body; 4. a base plate; 41. a window; 42. a limiting step; 43. mounting grooves; 5. a glass insulator; 6. a cover plate; 7. and (3) a ceramic piece.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1 to fig. 12, a description will now be given of a package structure of a micro-channel heat sink-based microwave power device according to the present invention. The packaging structure of the microwave power device based on the micro-channel radiator comprises: the microwave packaging tube comprises a bottom plate 4, a wall body 3 fixedly arranged on the bottom plate 4 and a cover plate 6 packaged on the wall body 3.
The metal-based microchannel heat sink 1 comprises a microchannel carrier plate 11, a refrigerant inlet pipe 12 and a refrigerant outlet pipe 13; the micro-channel carrier plate 11 is provided with a micro-channel therein, a refrigerant inlet pipe 12 and a refrigerant outlet pipe 13 are connected to the inlet and outlet of the micro-channel, the micro-channel carrier plate 11 is fixed on the bottom plate 4, and the refrigerant inlet pipe 12 and the refrigerant outlet pipe 13 are exposed outside the microwave package shell.
The chip and the circuit module are packaged on the micro-channel carrier plate 11.
The invention provides a micro-channel radiator-based packaging structure of a microwave power device and a manufacturing method thereof.A metal-based micro-channel radiator 1 is assembled on a bottom plate 4 of a packaging tube shell, a chip and a circuit module are assembled on a micro-channel carrier plate 11, and the metal-based micro-channel radiator 1 can realize ideal combination of heat conductivity, machinability and electric conductivity and can improve the heat dissipation effect of the microwave packaging tube shell. The metal-based micro-channel radiator 1 can realize micro-channels with the magnitude of tens of microns by using a micro-nano additive or etching technology, and can realize the molding of a multi-layer radiating structure by using a metal bonding process; in addition, the surface of the micro flow channel carrier 11 can be formed with an interface material better than the chip assembly process by an electroplating process.
The microwave circuit application needs to consider the requirements of application environment on packaging, the packaging of a power device provides good matching output for a chip circuit, and meanwhile, the power device has good grounding and heat dissipation capabilities; good hermeticity is also required in order to effectively provide reliable hermetic protection to the semiconductor device.
According to the invention, a microwave packaging technology and a micro-nano processing technology are combined, the metal-based micro-channel radiator 1 is manufactured by the micro-nano processing technology to replace a traditional microwave packaged chip mounting base, and a chip heat source is directly assembled on a metal surface of the metal-based micro-channel radiator 1, so that a heat flow path from chip heating to a heat conducting medium is shortened to the maximum extent, and the maximum exertion of heat dissipation capacity is realized.
The invention has the following beneficial effects: 1) An integrated structure for realizing microwave packaging application based on a metal-based micro-channel radiator 1 is provided; 2) The integrated structure can realize high-performance heat dissipation of the traditional microwave package and box body circuit, thereby improving the power and the thermal reliability of the microwave circuit; 3) The packaging structure and the manufacturing method of the microwave power device based on the metal-based micro-channel radiator 1 are compatible with the conventional packaging process, and good sealing performance can be realized.
The cooling medium may be cooling water or cooled gas.
In some embodiments, as shown in fig. 7 to 10, the bottom plate 4 is provided with a sunken mounting groove 43, the mounting groove 43 is provided with an inlet hole and an outlet hole, the microchannel carrier plate 11 is sunken in the mounting groove 43, and the refrigerant inlet pipe 12 and the refrigerant outlet pipe 13 penetrate out of the inlet hole and the outlet hole.
In some embodiments, as shown in fig. 1 to 6, the bottom plate 4 is provided with a window 41, the window 41 is provided with a limiting step 42, and the micro channel carrier plate 11 is sunk on the limiting step 42.
Wherein, the depth of the mounting groove 43 and the limiting step 42 is the same as or close to the thickness of the micro flow channel carrier plate 11, so as to be convenient for mounting the chip and the peripheral circuit, then sintering the radio frequency and direct current insulators, and finally electroplating nickel gold.
In some embodiments, the surface of the micro flow channel carrier plate 11 is provided with a nickel plating layer and a gold plating layer in this order. The microwave chip needs to be directly assembled on the micro-channel radiator to improve the heat dissipation effect, and in order to realize the direct welding or bonding of the chip, the surface of the micro-channel carrier plate 11 is processed by a nickel-gold circuit.
In some embodiments, the nickel-plating layer is 3um to 20um thick and the gold-plating layer is 0.5um to 3um thick.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and reference may be made to the related descriptions of other embodiments for parts that are not described or illustrated in a certain embodiment.
Based on the same inventive concept, the embodiment of the present application further provides a method for manufacturing the packaging structure of the microwave power device based on the micro flow channel heat sink, as shown in fig. 1 to 12, the manufacturing method includes:
manufacturing a micro-channel in the substrate by adopting a micro-nano processing technology to form a micro-channel carrier plate 11;
a refrigerant inlet pipe 12 and a refrigerant outlet pipe 13 are respectively fixed on the outlet and the inlet of the microchannel carrier plate 11 to form a metal-based microchannel radiator 1;
plating a nickel plating layer and a gold plating layer on the micro flow channel carrier plate 11;
welding a metal-based micro-channel radiator 1 on a bottom plate 4 of a microwave packaging tube shell;
the chip and the circuit module are arranged on the micro-channel carrier plate 11;
and a cover plate 6 is packaged on the wall 3 of the microwave packaging tube shell.
Compared with the prior art, the manufacturing method of the micro-channel radiator-based packaging structure of the microwave power device has the following beneficial effects: the metal-based micro-channel heat radiator 1 can realize ideal combination of thermal conductivity, machinability and electrical conductivity, can be used as a feasible way for radiating the chip, and the optimized metal-based heat radiator can easily realize the heat radiation capability of 800-1000W/cm < 2 >. The metal-based micro-channel radiator 1 can realize a micro-channel with the magnitude of tens of micrometers by using a micro-nano additive or etching technology, and can realize the molding of a multi-layer radiating structure by using a metal bonding process; in addition, the surface of the micro flow channel carrier 11 can be formed with an interface material better than the chip assembly process by an electroplating process.
This embodiment metal base microchannel radiator 1 and the independent manufacturing of microwave tube encapsulation adopt welding process to realize the integration of metal base microchannel radiator and microwave tube encapsulation, because the microchannel radiator has better heat flow exchange capacity, and the heat flow route of chip and radiating medium is short to realize better chip heat dissipation. For high power and high power density microwave circuit applications.
The principle of the drawings is explained as follows: fig. 4 and 12 show that the metal-based microchannel heat sink 1 is packaged and welded with a microwave tube shell to replace part of the base function of the original tube shell package, and a high-power microwave active chip and other circuits are mounted on the microchannel carrier plate 11 of the microchannel heat sink, because the metal-based microchannel heat sink 1 has better heat flow exchange capacity and the heat flow path between the chip and the heat dissipation medium is short, better heat dissipation of the chip is realized. After the micro-channel radiator is prefabricated and molded, the micro-channel radiator is embedded into a prepared packaging tube shell through a welding process. The assembled circuit may be capped by a cover plate 6 to form a completed circuit module.
Fig. 7 shows a package structure of a welded insulator, where the whole box body is a machined metal shell, and the material of the whole box body may be duralumin, copper, silicon aluminum, kovar, etc., including but not limited to the above materials. The glass insulator 5 is welded on the metal box body by adopting a welding process and is used for power-on and signal transmission of a circuit in the box body. Fig. 8 is a package of a metal ceramic tube, and the metal part and the ceramic part 7 of the package are sintered together by a co-firing process to form an integrated integration of the signal terminal and the package metal part.
Because the bottom conduit of the circuit package integrated with the micro-channel heat dissipation is extended out, the process of circuit assembly and sealing welding needs to be flattened, and fig. 13 and 14 show a schematic diagram of the assembly carrier of the package structure provided by the invention. The assembly carrier is a metal block, and the positions of the refrigerant inlet pipe 12 and the refrigerant outlet pipe 13 are dug in the assembly carrier for the circuit assembly and the processing process.
The invention provides a method for processing a metal-based micro-channel radiator 1, which adopts a micro-nano processing technology, wherein the micro-nano processing technology is basically divided into two blocks of surface processing bodies, and the basic flow of a micro-nano structure device is as follows:
the basic flow of surface processing is as follows: depositing a sacrificial layer material, photoetching to define a sacrificial layer pattern, etching to finish the transfer of the sacrificial layer pattern, depositing a structural material, photoetching to define a micro-nano structure hot-stamping layer pattern, etching to finish the transfer of a structural layer pattern, releasing and removing the sacrificial layer, reserving the structural layer, and finishing the manufacture of the microstructure.
The basic flow of body processing is as follows: depositing a protective layer material, defining a protective pattern by photoetching, completing the transfer of the protective pattern by etching, corroding a silicon substrate, manufacturing a three-dimensional cavity structure and removing the protective layer material.
And (3) processing a micro-nano processing technology according to the preset graphic shape of the micro-channel to obtain a micro-channel structure on the substrate.
In the process of the processing flow of the microwave packaging tube shell, the metal tube shell based on high-temperature ceramics is used as a metal piece of the bottom plate 4 to manufacture a window 41 for mounting the micro-channel radiator during machining, a limiting step 42 is arranged on the window 41, then sintering with other parts of the tube shell is completed, and nickel and gold are electroplated.
Based on the microwave package tube shell of the glass insulator 5, a mounting groove 43 and a through hole for mounting the micro-channel radiator are directly processed in the processing process of the bottom plate 4, the depth of the mounting groove 43 is consistent with or close to the thickness of the micro-channel radiator so as to be convenient for mounting a chip and a peripheral circuit, then the radio frequency and the direct current insulator are sintered, and finally nickel and gold are electroplated.
In some embodiments, the substrate is made of copper, aluminum or ceramic.
In some embodiments, the copper-based material comprises oxygen-free copper, brass, or copper-molybdenum-copper. The aluminum-based material comprises aluminum alloy, silicon-aluminum alloy and the like; the material of the substrate includes, but is not limited to, those listed herein.
In some embodiments, the microchannel carrier 11 is soldered on the bottom plate 4 of the microwave package case by gold-tin or gold-germanium solder, and the soldering ring 2 is used for reflow soldering, and the fixture applies a certain pressure to the metal-based microchannel heat sink 1 and the microwave package case during the reflow soldering process. The size of the solder ring 2 is machined according to the size and shape of the mounting groove 43 and the micro flow channel carrier plate 11.
The assembly of the micro-channel radiator is realized by vacuum reflux or a hydrogen brazing furnace and the sealing performance of the microwave packaging tube shell or box body and the radiator is ensured by adopting the soldering tin ring 2.
In the installation process, the microwave power device based on the micro-channel radiator is packaged in the process of being applied to a microwave circuit, a high-power heat source device (such as a chip) can be installed at a proper position on the micro-channel carrier plate 11, and the bias circuit can be installed on the radiator or other positions of a tube shell; due to the existence of the refrigerant inlet pipe 12 and the refrigerant outlet pipe 13, the chip can be supported by a proper support carrier in the bonding process, so that the tube shell or the package is horizontally placed.
In some embodiments, the cover plate 6 is sealed on the wall 3 of the microwave package by parallel sealing, laser sealing or sealant.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. The utility model provides a packaging structure of microwave power device based on microchannel radiator which characterized in that includes:
the microwave packaging pipe shell comprises a bottom plate (4), a wall body (3) fixedly arranged on the bottom plate (4) and a cover plate (6) packaged on the wall body (3);
the metal-based micro-channel radiator (1) comprises a micro-channel carrier plate (11), a refrigerant inlet pipe (12) and a refrigerant outlet pipe (13); a micro-channel is arranged in the micro-channel carrier plate (11), the refrigerant inlet pipe (12) and the refrigerant outlet pipe (13) are connected to an inlet and an outlet of the micro-channel, the micro-channel carrier plate (11) is fixed on the bottom plate (4), and the refrigerant inlet pipe (12) and the refrigerant outlet pipe (13) penetrate through the bottom plate (4) and are exposed outside the microwave packaging tube shell; and the chip and the circuit module are packaged on the micro-channel carrier plate (11).
2. The micro flow channel heat sink-based packaging structure for microwave power devices as claimed in claim 1, wherein the bottom plate (4) is provided with a sunken mounting groove (43), the mounting groove (43) is provided with an inlet hole and an outlet hole, the micro flow channel carrier plate (11) is sunken in the mounting groove (43), and the refrigerant inlet pipe (12) and the refrigerant outlet pipe (13) penetrate out of the inlet hole and the outlet hole.
3. The micro-channel heat sink-based packaging structure for microwave power devices as claimed in claim 1, wherein the bottom plate (4) is provided with a window (41), the window (41) is provided with a limit step (42), and the micro-channel carrier (11) is sunk on the limit step (42).
4. The micro-channel heat sink-based packaging structure for microwave power devices as claimed in claim 1, wherein the micro-channel carrier (11) is provided with a nickel-plated layer and a gold-plated layer on the surface thereof in sequence.
5. The micro-fluidic channel heat sink-based packaging structure for microwave power devices of claim 4, wherein the thickness of the nickel-plated layer is 3um-20um, and the thickness of the gold-plated layer is 0.5um-3um.
6. A method for manufacturing a package structure for a micro-channel heat sink-based microwave power device as claimed in any one of claims 1-5, the method comprising:
manufacturing a micro-channel in the substrate by adopting a micro-nano processing technology to form a micro-channel carrier plate (11);
a refrigerant inlet pipe (12) and a refrigerant outlet pipe (13) are respectively fixed on an outlet and an inlet of the micro-channel carrier plate (11) to form a metal-based micro-channel radiator (1);
plating a nickel plating layer and a gold plating layer on the micro-channel carrier plate (11);
welding the metal-based micro-channel radiator (1) on a bottom plate (4) of a microwave packaging tube shell;
the chip and the circuit module are assembled on the micro-channel carrier plate (11);
and encapsulating the cover plate (6) on the wall body (3) of the microwave encapsulation tube shell.
7. The method for manufacturing the package structure according to claim 6, wherein the substrate is made of a copper-based material, an aluminum-based material, or a ceramic material.
8. The method of claim 7, wherein the copper-based material comprises oxygen-free copper, brass, or copper-molybdenum-copper.
9. The method for manufacturing a package structure according to claim 6, wherein the micro flow channel carrier (11) is soldered to the bottom plate (4) of the microwave package case by using gold-tin or gold-germanium solder, and the solder ring (2) is used for reflow soldering, and the fixture applies a certain pressure to the micro flow channel heat sink and the microwave package case during reflow soldering.
10. The method for manufacturing a package according to claim 6, wherein the cover plate (6) is packaged on the wall (3) of the microwave package by parallel sealing, laser sealing or sealant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211356642.6A CN115910954A (en) | 2022-11-01 | 2022-11-01 | Micro-channel radiator-based packaging structure of microwave power device and manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211356642.6A CN115910954A (en) | 2022-11-01 | 2022-11-01 | Micro-channel radiator-based packaging structure of microwave power device and manufacturing method |
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| CN115910954A true CN115910954A (en) | 2023-04-04 |
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| CN202211356642.6A Pending CN115910954A (en) | 2022-11-01 | 2022-11-01 | Micro-channel radiator-based packaging structure of microwave power device and manufacturing method |
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