CN115851383A - Preparation method of low-foaming low-corrosion-rate inductance welding agent cleaning agent - Google Patents
Preparation method of low-foaming low-corrosion-rate inductance welding agent cleaning agent Download PDFInfo
- Publication number
- CN115851383A CN115851383A CN202211499550.3A CN202211499550A CN115851383A CN 115851383 A CN115851383 A CN 115851383A CN 202211499550 A CN202211499550 A CN 202211499550A CN 115851383 A CN115851383 A CN 115851383A
- Authority
- CN
- China
- Prior art keywords
- low
- raw materials
- agent
- cleaning agent
- percent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012459 cleaning agent Substances 0.000 title claims abstract description 86
- 238000003466 welding Methods 0.000 title claims abstract description 29
- 239000003795 chemical substances by application Substances 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 238000005187 foaming Methods 0.000 title claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 68
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims abstract description 54
- 239000004721 Polyphenylene oxide Substances 0.000 claims abstract description 35
- 229920000570 polyether Polymers 0.000 claims abstract description 35
- 229920000056 polyoxyethylene ether Polymers 0.000 claims abstract description 33
- 229940051841 polyoxyethylene ether Drugs 0.000 claims abstract description 33
- 239000002994 raw material Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 28
- 229910000029 sodium carbonate Inorganic materials 0.000 claims abstract description 27
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000008367 deionised water Substances 0.000 claims abstract description 25
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 25
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims abstract description 24
- 235000019832 sodium triphosphate Nutrition 0.000 claims abstract description 17
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000012964 benzotriazole Substances 0.000 claims abstract description 14
- 239000013530 defoamer Substances 0.000 claims abstract description 12
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 11
- 239000006260 foam Substances 0.000 claims abstract description 10
- 239000013543 active substance Substances 0.000 claims abstract description 6
- 238000003756 stirring Methods 0.000 claims description 51
- 238000006243 chemical reaction Methods 0.000 claims description 36
- 239000002518 antifoaming agent Substances 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 238000012858 packaging process Methods 0.000 claims description 11
- 238000007789 sealing Methods 0.000 claims description 11
- 239000001488 sodium phosphate Substances 0.000 claims description 11
- 229910000162 sodium phosphate Inorganic materials 0.000 claims description 11
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims description 11
- -1 polyoxyethylene Polymers 0.000 claims description 6
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 5
- 229910001385 heavy metal Inorganic materials 0.000 claims description 3
- 238000005303 weighing Methods 0.000 claims 9
- 239000002738 chelating agent Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 18
- 230000008569 process Effects 0.000 abstract description 14
- 230000007797 corrosion Effects 0.000 abstract description 13
- 238000005260 corrosion Methods 0.000 abstract description 13
- 238000005406 washing Methods 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 5
- 230000002411 adverse Effects 0.000 abstract description 3
- 239000000654 additive Substances 0.000 abstract description 2
- 230000000996 additive effect Effects 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 description 28
- 239000000306 component Substances 0.000 description 20
- 239000011521 glass Substances 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 14
- 239000004094 surface-active agent Substances 0.000 description 14
- 230000004907 flux Effects 0.000 description 13
- 230000006698 induction Effects 0.000 description 11
- 238000005476 soldering Methods 0.000 description 11
- RVCKCEDKBVEEHL-UHFFFAOYSA-N 2,3,4,5,6-pentachlorobenzyl alcohol Chemical compound OCC1=C(Cl)C(Cl)=C(Cl)C(Cl)=C1Cl RVCKCEDKBVEEHL-UHFFFAOYSA-N 0.000 description 10
- 230000001105 regulatory effect Effects 0.000 description 10
- 230000032798 delamination Effects 0.000 description 9
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- 239000003112 inhibitor Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 239000002736 nonionic surfactant Substances 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- 235000019198 oils Nutrition 0.000 description 4
- 238000004945 emulsification Methods 0.000 description 3
- 239000003344 environmental pollutant Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 231100000719 pollutant Toxicity 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- IDRUEHMBFUJKAK-UHFFFAOYSA-N 2,4-dichloro-5-(trifluoromethyl)pyrimidine Chemical compound FC(F)(F)C1=CN=C(Cl)N=C1Cl IDRUEHMBFUJKAK-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical group 0.000 description 2
- 239000011538 cleaning material Substances 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002529 flux (metallurgy) Substances 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- DUIOKRXOKLLURE-UHFFFAOYSA-N 2-octylphenol Chemical compound CCCCCCCCC1=CC=CC=C1O DUIOKRXOKLLURE-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 235000013162 Cocos nucifera Nutrition 0.000 description 1
- 244000060011 Cocos nucifera Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 239000010775 animal oil Substances 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 230000009920 chelation Effects 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 239000006184 cosolvent Substances 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 239000003995 emulsifying agent Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 150000002191 fatty alcohols Chemical class 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000013332 literature search Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002480 mineral oil Substances 0.000 description 1
- 235000010446 mineral oil Nutrition 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical class CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005063 solubilization Methods 0.000 description 1
- 230000007928 solubilization Effects 0.000 description 1
- 230000003381 solubilizing effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 210000004243 sweat Anatomy 0.000 description 1
- 230000002522 swelling effect Effects 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 235000015112 vegetable and seed oil Nutrition 0.000 description 1
- 239000008158 vegetable oil Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Landscapes
- Detergent Compositions (AREA)
Abstract
The invention relates to the technical field of materials in the electronic industry, and discloses a preparation method of a low-foam low-corrosion-rate inductance welding agent cleaning agent, which comprises the following components in percentage by weight: (alkylphenol polyoxyethylene ether: octylphenol polyoxyethylene ether (2): 5% -15%; 5% -15% of sodium carbonate; triethanolamine: 1% -3%; diethylene glycol monomethyl ether: 3% -5%; sodium tripolyphosphate: 0.6% -2%; polyether modified silicone defoamer: 5% -15%; benzotriazole: 5% -15%; the balance of deionized water; the additive adopts a two-component active agent mode, wherein the raw materials such as sodium carbonate, triethanolamine, sodium tripolyphosphate and the like can effectively avoid corrosion to the inductor, reduce oily dirt in the cleaning agent in the using process, eliminate adverse effects on washing and the like.
Description
Technical Field
The invention relates to the technical field of materials in the electronic industry, in particular to a preparation method of a low-foam low-corrosion-rate inductance welding agent cleaning agent.
Background
In the processing technology of electronic information products, SMT (surface mount technology) printing screens, wave crest furnaces and reflow furnaces, a large amount of cleaning agents are consumed for cleaning PCBA (assembled circuit boards) every year, for example, the SMT printing screens are necessary tools for printing solder paste or various patch adhesives in the processing process of electronic products, and need to be cleaned when used for 8 hours or the varieties are replaced; the hearth of the wave-crest furnace and the reflow furnace are polluted by the residues of the soldering flux volatilized and decomposed in the solder paste and need to be cleaned regularly; the PCBA is a core component in all electronic instruments, meters, computers, post and telecommunications, automation control and electronic equipment, and the quality and reliability of the PCBA in use after being assembled and powered up are closely related to the cleanliness of the PCBA. In general, in order to ensure the reliability of soldering in the assembly soldering process of the PCBA, soldering fluxes with high activity are required to be used, and the soldering fluxes are remained on the PCBA to corrode a circuit board and components and reduce the surface insulation resistance of the circuit board and the components, so that severe corrosion and electric leakage can occur particularly in a high-temperature and high-humidity environment to influence the reliability of the whole machine. With the densification of assembly and the fine spacing of pins, higher and higher requirements are provided for the cleanliness of the PCBA and the cleaning process. The residues on the PCBA are mainly residues of electronic soldering auxiliary materials such as solder paste and flux, and contaminants such as hand sweat, finger prints, and fibers and dust falling in the air during handling, and these substances are complex in composition, contain various water-insoluble components such as resins, active agents, thixotropic agents, and thickening agents, and also contain anionic, cationic, and weak organic acids, and can be roughly classified into four types, i.e., ionic and nonionic water-soluble contaminants, water-insoluble contaminants, and insoluble solid particles.
The main components of the water-based cleaning agent comprise a surfactant, a washing assistant, a corrosion inhibitor and the like, and the water-based cleaning agent is a cleaning agent which is widely applied in recent years. The cleaning agent has good compatibility, low price, safe operation, no combustion and explosion, and large freedom degree of cleaning and formulation, can adjust the formulation aiming at pollutants with different properties, and has better cleaning effect on polar and non-polar pollutants by matching with physical cleaning means such as heating, brushing, spray injection, ultrasonic cleaning and the like. At present, the technology of foreign water-based cleaning agents is mature, for example, the cleaning agent for Pine Alpha ST-700BR water rinsing is successfully developed by the wild of the Mitsugawa chemical industry corporation of Osaka, japan, and is formed by inhibiting the components of nickel and zinc dissolved in water and inhibiting the oxidation components of copper, so that the discoloration of nickel and silver is effectively inhibited; a through-type cleaning method suitable for cleaning a flip chip type mounted substrate has also been developed.
Based on the key technology in the research and development of water-based cleaning agents, the water-based cleaning agents in China at present have the following defects and the problems of technical breakthrough: 1) The cleaning effect on a plurality of viscous waxy dirt, such as rosin and glue, and blind holes and gaps on workpieces and hydrophobic parts is poor, and the phenomenon that the plate surface is whitened is easy to appear after the PCBA is cleaned by the conventional water-based cleaning agent; 2) Residues after being cleaned by some water-based cleaning agents are difficult to wash away, especially residues in blind holes and gaps, and the residues can cause influence on subsequent processes or application; 3) The low-temperature cleaning effect is poor, the oil removal speed is slow, and the cleaning agent cannot be compared with a solvent type cleaning agent; 4) If the metal parts are not dried in time, corrosion is easy to occur, such as the steel mesh, a welding disc on the PCBA and pin parts of components; 5) The special multi-effect surfactant suitable for industrial cleaning is lacked, the better performance mostly depends on import, and some surfactants with various effects cannot be bought in China market, so the compounding of the surfactants has a larger technical bottleneck; 6) The treatment of the waste cleaning liquid is complex and difficult to recycle.
The non-ionic surfactants are various, and commonly used surfactants comprise alkylphenol ethoxylates, fatty alcohol polyoxyethylene ether, fatty acid polyoxyethylene ester and the like, and the surfactants with different functions can be obtained by selecting a proper surfactant type and selecting the number of carbon atoms and the addition number of ethylene oxide contained in the surfactant type. The nonionic surfactant has high surface activity and good detergency at low concentration. The oil stain such as animal and vegetable oil and mineral oil can be removed by the excellent solubilization and emulsification. In addition, since the washing process in public places is performed in a large drum washing machine, it is required that the washing process should not have too much bubbles. Too much foam affects the washing effect and the waste water discharge in the washing process. While nonionic surfactants have a relatively low foam compared to anionic surfactants, this is another important reason why nonionic surfactants are better suited as the primary active ingredient of degreasing cleaners.
The prior art and literature search show that: patent CN111518628A discloses a water-based cleaning agent for soldering flux of an integrated circuit board and a preparation method thereof, belonging to the technical field of cleaning agents. The invention provides a water-based integrated circuit board soldering flux cleaning agent which comprises the following raw materials in percentage by weight: 10-30% of surfactant, 2-8% of cosolvent and the balance of deionized water; the surfactant is selected from at least two of PPG-6C9-11 alcohol polyether-5, C12-15 branched chain ethoxylated propyl alcohol, N- (2-hydroxyethyl) -N- (2-ethylhexyl) B-alanine monosodium salt, C9-11 ethoxylated alcohol, coconut alkyl quaternary amine ethoxylate, and polyethylene glycol.
Patent CN108130208A discloses a water-based flux cleaning agent and a preparation method thereof, wherein the water-based flux cleaning agent comprises the following raw materials in parts by weight: 20-40 parts of fatty amine, 20-40 parts of glycol ether, 5-15 parts of nonionic surfactant and 10-30 parts of deionized water.
CN106479758A discloses a cleaning agent for flux of integrated circuit board, which comprises the following components by weight percent, 4065% of high boiling point alcohol ether solvent; 112% of N-methyl-2-pyrrolidone; 2, 4-dichloro-5-trifluoromethylpyrimidine 0.15%; adding water into a reaction kettle, heating to 5060 ℃, adding N methyl 2 pyrrolidone and 2,4 dichloro 5 trifluoromethyl pyrimidine according to weight percentage, uniformly stirring, cooling to 2530 ℃, and slowly dripping a high-boiling-point alcohol ether solvent to prepare the integrated circuit board cleaning agent.
The patent CN109837145A discloses a water-based electronic industry soldering flux cleaning agent and a preparation method thereof, wherein the raw material formula of the water-based electronic industry soldering flux cleaning agent comprises, by weight, 50-70 parts of high-boiling-point alcohol ether, 20-30 parts of terpineol, 1-2 parts of a corrosion inhibitor, 1.5-4 parts of an emulsifier, 1-2 parts of a penetrant, 1-2 parts of alkali and 10-20 parts of deionized water.
The above patents are all water-based cleaners, and all the water-based cleaners can adjust the formula proportion to achieve the purpose of cleaning oil stains and pollutants. The above patents can improve the dirt-removing ability of the cleaning agent to a certain extent, but from the practical viewpoint, whether the cleaning agent damages the circuit after welding and whether the cleaning agent is easy to clean are not described in the related patents. This patent reaches abluent effect through two active agent complex modes, synergism.
Disclosure of Invention
The invention aims to provide a preparation method of a low-foaming low-corrosion-rate inductance welding agent cleaning agent, which improves the cleaning capability of the cleaning agent, reduces the damage of the cleaning agent to a cleaned object in the cleaning process and enlarges the application range. The invention has obvious gain effect on the improvement of the comprehensive performance of the inductor under the improvement of related process raw material formula.
The principle of the invention is as follows: (1) The additive adopts a two-component active agent mode, wherein alkylphenol ethoxylates: the octyl phenol polyoxyethylene ether is 2, and has the advantages of high turbidity point, low corrosivity, good oil solubility, low surface tension and the like; (2) The sodium carbonate makes the cleaning liquid alkalescent, so that the inductor is prevented from being corroded; (3) The triethanolamine can reduce oily dirt generated in the using process of the cleaning agent; (4) The sodium tripolyphosphate heavy metal ions have strong chelation, can be sealed to eliminate adverse effects on washing, and the protein has swelling and solubilizing effects to achieve degumming effect, emulsification promoting effect on fat, and dispersion effect on solid dirt; (5) The polyether modified organic silicon defoaming agent can be used for oily and aqueous foaming systems, can quickly eliminate foams and can play a role in continuously suppressing the foams for a long time; (6) Wherein, the benzotriazole can be matched with a plurality of corrosion inhibitors to improve the corrosion inhibition effect.
The specific embodiment of the preparation method of the inductance welding agent cleaning agent with low foam and low corrosion rate, which is disclosed by the invention, is as follows:
the S1 comprises the following components in percentage by weight:
(alkylphenol polyoxyethylene ether: octylphenol polyoxyethylene ether (2): 5 to 15 percent of
Sodium carbonate: 5 to 15 percent
Triethanolamine: 1 to 3 percent of
Diethylene glycol monomethyl ether: 3 to 5 percent
Sodium tripolyphosphate: 0.6 to 2 percent
Polyether modified silicone defoamer: 5 to 15 percent of
Benzotriazole: 5 to 15 percent
The balance of deionized water;
s2, preparing a clean glass reaction kettle, placing the glass reaction kettle in an ice bath, wherein the water bath temperature is 50-80 ℃, adding the triethanolamine, the alkylphenol ethoxylate, the octylphenol polyoxyethylene ether and the diethylene glycol monomethyl ether in percentage by weight into the reaction kettle, starting stirring, regulating the rotation speed to 120-220rpm, and uniformly stirring;
s3, sequentially adding sodium carbonate, sodium phosphate, a polyether modified organic silicon defoaming agent and a polyether modified organic silicon defoaming agent under the stirring state, and finally adding deionized water;
s4, placing the cleaning agent stirred in the step S3 in a vacuum environment, wherein the vacuum degree is 0.01-0.1MPa, and carrying out vacuum defoaming and secondary vacuum stirring on the cleaning agent for 10-30min;
and S5, after uniformly dispersing, standing, sealing and keeping in shade, and storing to obtain the induction welding agent cleaning agent for the chip packaging process.
Has the advantages that:
1. according to the invention, the double-surface active agent is adopted in the raw materials, and the mutual synergistic effect of the two active agents is utilized, so that the cleaning efficiency of the cleaned objects is obviously improved;
2. the corrosion inhibitor is added into the raw materials, so that the cleaning agent has an obvious effect on effectively protecting the cleaning objects in the cleaning process, and avoids the damage of the materials in the cleaning process;
3. in the invention, the defoaming agent is added into the raw materials, so that the removal of the cleaning materials after subsequent cleaning is obviously improved;
4. the sodium tripolyphosphate is added into the raw materials, and plays roles in adsorbing heavy metal ions in the cleaning process, promoting emulsification on fat and dispersing solid dirt;
5. in the implementation process, a vacuum defoaming and vacuum stirring process is added, so that the method is beneficial to more fully and uniformly mixing related raw materials.
Drawings
FIG. 1 is a flow chart of a method for preparing a low-foaming low-corrosion-rate cleaning agent for an induction soldering flux.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example 1:
the S1 comprises the following components in percentage by weight:
(alkylphenol polyoxyethylene ether: octylphenol polyoxyethylene ether (2): 5 percent of
Sodium carbonate: 5 percent of
Triethanolamine: 1 percent of
Diethylene glycol monomethyl ether: 3 percent
Sodium tripolyphosphate: 0.6 percent
Polyether modified silicone defoamer: 5 percent
Benzotriazole: 5 percent of
The balance of deionized water;
s2, preparing a clean glass reaction kettle, placing the glass reaction kettle in an ice bath at the water bath temperature of 50 ℃, adding the triethanolamine, the alkylphenol ethoxylate, the octylphenol polyoxyethylene ether and the diethylene glycol monomethyl ether in percentage by weight into the reaction kettle, starting stirring, regulating the rotation speed to 120rpm, and uniformly stirring;
s3, sequentially adding sodium carbonate, sodium phosphate, a polyether modified organic silicon defoaming agent and a polyether modified organic silicon defoaming agent under the stirring state, and finally adding deionized water;
s4, placing the cleaning agent stirred in the step S3 in a vacuum environment, wherein the vacuum degree is 0.1MPa, and carrying out vacuum defoaming and secondary vacuum stirring on the cleaning agent for 10min;
and S5, after uniformly dispersing, standing, sealing and keeping in shade, and storing to obtain the induction welding agent cleaning agent for the chip packaging process.
Example 2:
the S1 comprises the following components in percentage by weight:
(alkylphenol polyoxyethylene ether: octylphenol polyoxyethylene ether (2): 15 percent of
Sodium carbonate: 15 percent of
Triethanolamine: 3 percent of
Diethylene glycol monomethyl ether: 5 percent
Sodium tripolyphosphate: 2 percent
Polyether modified silicone defoamer: 15 percent of
Benzotriazole: 15 percent of
The balance of deionized water;
s2, preparing a clean glass reaction kettle, placing the glass reaction kettle in an ice bath, wherein the water bath temperature is 80 ℃, adding the triethanolamine, the alkylphenol ethoxylate, the octylphenol polyoxyethylene ether and the diethylene glycol monomethyl ether in percentage by weight into the reaction kettle, starting stirring, regulating the rotation speed to 220rpm, and uniformly stirring;
s3, sequentially adding sodium carbonate, sodium phosphate, the polyether modified organic silicon defoaming agent and the polyether modified organic silicon defoaming agent under the stirring state, and finally adding deionized water;
s4, placing the cleaning agent stirred in the step S3 in a vacuum environment, wherein the vacuum degree is 0.01MPa, and carrying out vacuum defoaming and secondary vacuum stirring on the cleaning agent for 30min;
and S5, after uniformly dispersing, standing, sealing and keeping in shade, and storing to obtain the induction welding agent cleaning agent for the chip packaging process.
Example 3:
the S1 comprises the following components in percentage by weight:
(alkylphenol polyoxyethylene ether: octylphenol polyoxyethylene ether (2): 10 percent of
Sodium carbonate: 10 percent
Triethanolamine: 2 percent of
Diethylene glycol monomethyl ether: 4 percent
Sodium tripolyphosphate: 1 percent of
Polyether modified silicone defoamer: 10 percent of
Benzotriazole: 10 percent
The balance of deionized water;
s2, preparing a clean glass reaction kettle, placing the glass reaction kettle in an ice bath, wherein the water bath temperature is 60 ℃, adding the triethanolamine, the alkylphenol ethoxylate, the octylphenol polyoxyethylene ether and the diethylene glycol monomethyl ether in percentage by weight into the reaction kettle, starting stirring, regulating the rotation speed to 180rpm, and uniformly stirring;
s3, sequentially adding sodium carbonate, sodium phosphate, a polyether modified organic silicon defoaming agent and a polyether modified organic silicon defoaming agent under the stirring state, and finally adding deionized water;
s4, placing the cleaning agent stirred in the step S3 in a vacuum environment, wherein the vacuum degree is 0.05MPa, and carrying out vacuum defoaming and secondary vacuum stirring on the cleaning agent for 20min;
and S5, after uniformly dispersing, standing, sealing and keeping in shade, and storing to obtain the induction welding agent cleaning agent for the chip packaging process.
Comparative example 4:
in the embodiment, no surfactant is added in the cleaning agent for treatment, so that a contrast test is carried out;
the S1 comprises the following components in percentage by weight:
sodium carbonate: 10 percent of
Triethanolamine: 2 percent of
Diethylene glycol monomethyl ether: 4 percent of
Sodium tripolyphosphate: 1 percent of
Polyether modified silicone defoamer: 10 percent of
Benzotriazole: 10 percent of
The balance of deionized water;
s2, preparing a clean glass reaction kettle, placing the glass reaction kettle in an ice bath, wherein the water bath temperature is 60 ℃, adding the triethanolamine, the alkylphenol ethoxylate, the octylphenol polyoxyethylene ether and the diethylene glycol monomethyl ether in percentage by weight into the reaction kettle, starting stirring, regulating the rotation speed to 180rpm, and uniformly stirring;
s3, sequentially adding sodium carbonate, sodium phosphate, the polyether modified organic silicon defoaming agent and the polyether modified organic silicon defoaming agent under the stirring state, and finally adding deionized water;
s4, placing the cleaning agent stirred in the step S3 in a vacuum environment, wherein the vacuum degree is 0.05MPa, and carrying out vacuum defoaming and secondary vacuum stirring on the cleaning agent for 20min;
and S5, after uniformly dispersing, standing, sealing and keeping in shade, and storing to obtain the induction welding agent cleaning agent for the chip packaging process.
Comparative example 5:
in the embodiment, no defoaming agent is added in the cleaning agent for treatment, so that a contrast test is carried out;
the S1 comprises the following components in percentage by weight:
(alkylphenol polyoxyethylene ether: octylphenol polyoxyethylene ether (2): 10 percent of
Sodium carbonate: 10 percent
Triethanolamine: 2 percent of
Diethylene glycol monomethyl ether: 4 percent of
Sodium tripolyphosphate: 1 percent of
Benzotriazole: 10 percent of
The balance of deionized water;
s2, preparing a clean glass reaction kettle, placing the glass reaction kettle in an ice bath, wherein the water bath temperature is 60 ℃, adding the triethanolamine, the alkylphenol ethoxylate, the octylphenol polyoxyethylene ether and the diethylene glycol monomethyl ether in percentage by weight into the reaction kettle, starting stirring, regulating the rotation speed to 180rpm, and uniformly stirring;
s3, sequentially adding sodium carbonate, sodium phosphate, the polyether modified organic silicon defoaming agent and the polyether modified organic silicon defoaming agent under the stirring state, and finally adding deionized water;
s4, placing the cleaning agent stirred in the step S3 in a vacuum environment, wherein the vacuum degree is 0.05MPa, and carrying out vacuum defoaming and secondary vacuum stirring on the cleaning agent for 20min;
and S5, after uniformly dispersing, standing, sealing and keeping in shade, and storing to obtain the induction welding agent cleaning agent for the chip packaging process.
Comparative example 6:
in the embodiment, no corrosion inhibitor is added in the cleaning agent for treatment, so that a contrast test is carried out;
the S1 comprises the following components in percentage by weight:
(alkylphenol polyoxyethylene ether: octylphenol polyoxyethylene ether (2): 10 percent of
Sodium carbonate: 10 percent
Triethanolamine: 2 percent of
Diethylene glycol monomethyl ether: 4 percent of
Sodium tripolyphosphate: 1 percent of
Polyether modified silicone defoamer: 10 percent
The balance of deionized water;
s2, preparing a clean glass reaction kettle, placing the glass reaction kettle in an ice bath at the water bath temperature of 60 ℃, adding the triethanolamine, the alkylphenol ethoxylate, the octylphenol polyoxyethylene ether and the diethylene glycol monomethyl ether in the weight percentage into the reaction kettle, starting stirring, regulating the rotation speed to 180rpm, and uniformly stirring;
s3, sequentially adding sodium carbonate, sodium phosphate, a polyether modified organic silicon defoaming agent and a polyether modified organic silicon defoaming agent under the stirring state, and finally adding deionized water;
s4, placing the cleaning agent stirred in the step S3 in a vacuum environment, wherein the vacuum degree is 0.05MPa, and carrying out vacuum defoaming and secondary vacuum stirring on the cleaning agent for 20min;
and S5, after uniformly dispersing, standing, sealing and keeping in shade, and storing to obtain the induction welding agent cleaning agent for the chip packaging process.
Comparative example 7:
in the embodiment, only one surfactant is added into the cleaning agent for treatment, so that a contrast test is carried out;
the S1 comprises the following components in percentage by weight:
alkylphenol ethoxylates: 10 percent of
Sodium carbonate: 10 percent
Triethanolamine: 2 percent
Diethylene glycol monomethyl ether: 4 percent
Sodium tripolyphosphate: 1 percent of
Polyether modified silicone defoamer: 10 percent of
Benzotriazole: 10 percent of
The balance of deionized water;
s2, preparing a clean glass reaction kettle, placing the glass reaction kettle in an ice bath, wherein the water bath temperature is 60 ℃, adding the triethanolamine, the alkylphenol ethoxylate, the octylphenol polyoxyethylene ether and the diethylene glycol monomethyl ether in percentage by weight into the reaction kettle, starting stirring, regulating the rotation speed to 180rpm, and uniformly stirring;
s3, sequentially adding sodium carbonate, sodium phosphate, the polyether modified organic silicon defoaming agent and the polyether modified organic silicon defoaming agent under the stirring state, and finally adding deionized water;
s4, placing the cleaning agent stirred in the step S3 in a vacuum environment, wherein the vacuum degree is 0.05MPa, and carrying out vacuum defoaming and secondary vacuum stirring on the cleaning agent for 20min;
and S5, after uniformly dispersing, standing, sealing and keeping in shade, and storing to obtain the induction welding agent cleaning agent for the chip packaging process.
Comparative example 8:
in the embodiment, the sodium tripolyphosphate is not added into the cleaning agent for treatment, so that a contrast test is carried out;
the S1 comprises the following components in percentage by weight:
(alkylphenol polyoxyethylene ether: octylphenol polyoxyethylene ether (2): 10 percent of
Sodium carbonate: 10 percent of
Triethanolamine: 2 percent of
Diethylene glycol monomethyl ether: 4 percent of
Polyether modified silicone defoamer: 10 percent of
Benzotriazole: 10 percent of
The balance of deionized water;
s2, preparing a clean glass reaction kettle, placing the glass reaction kettle in an ice bath, wherein the water bath temperature is 60 ℃, adding the triethanolamine, the alkylphenol ethoxylate, the octylphenol polyoxyethylene ether and the diethylene glycol monomethyl ether in percentage by weight into the reaction kettle, starting stirring, regulating the rotation speed to 180rpm, and uniformly stirring;
s3, sequentially adding sodium carbonate, sodium phosphate, a polyether modified organic silicon defoaming agent and a polyether modified organic silicon defoaming agent under the stirring state, and finally adding deionized water;
s4, placing the cleaning agent stirred in the step S3 in a vacuum environment, wherein the vacuum degree is 0.05MPa, and carrying out vacuum defoaming and secondary vacuum stirring on the cleaning agent for 20min;
and S5, after uniformly dispersing, standing, sealing and keeping in shade, and storing to obtain the induction welding agent cleaning agent for the chip packaging process.
Comparative example 9:
in the embodiment, the cleaning agent is not subjected to vacuum stirring treatment, so that a contrast test is performed;
the S1 comprises the following components in percentage by weight:
(alkylphenol polyoxyethylene ether: octylphenol polyoxyethylene ether (2): 10 percent of
Sodium carbonate: 10 percent
Triethanolamine: 2 percent of
Diethylene glycol monomethyl ether: 4 percent of
Sodium tripolyphosphate: 1 percent of
Polyether modified silicone defoamer: 10 percent of
Benzotriazole: 10 percent of
The balance of deionized water;
s2, preparing a clean glass reaction kettle, placing the glass reaction kettle in an ice bath, wherein the water bath temperature is 60 ℃, adding the triethanolamine, the alkylphenol ethoxylate, the octylphenol polyoxyethylene ether and the diethylene glycol monomethyl ether in percentage by weight into the reaction kettle, starting stirring, regulating the rotation speed to 180rpm, and uniformly stirring;
s3, sequentially adding sodium carbonate, sodium phosphate, the polyether modified organic silicon defoaming agent and the polyether modified organic silicon defoaming agent under the stirring state, and finally adding deionized water;
and S4, after being uniformly dispersed, standing, sealing and keeping in a dark place for storage, thus obtaining the induction welding flux cleaning agent for the chip packaging process.
Table 1:
| item | Cleaning efficiency | Corrosion potential | Height of foam | pH value | Uniformity of |
| Example 1 | 87％ | -0.367V | 6mm | 9 | No delamination for 48h |
| Example 2 | 96％ | -0.384V | 2mm | 11 | No delamination for 48h |
| Example 3 | 94％ | -0.326V | 4mm | 10 | No delamination for 48h |
| Comparative example 4 | 37％ | -0.341V | 1mm | 10 | No delamination for 48h |
| Comparative example 5 | 92％ | -0.348V | 8mm | 10 | No delamination for 48h |
| Comparative example 6 | 95％ | -0.453V | 3mm | 10 | No delamination for 48h |
| Comparative example 7 | 82％ | -0.346V | 2mm | 10 | No delamination for 48h |
| Comparative example 8 | 85％ | -0.352V | 4mm | 11 | No delamination for 48h |
| Comparative example 9 | 92％ | -0.342V | 3mm | 10 | No delamination for 30h |
As can be seen from table 1: in the example 1, when all the raw materials are added according to the lowest standard, the cleaning effect performance of the cleaning agent is not very good, wherein the cleaning efficiency, the foam height, the pH value and the like are not very outstanding, in the comparative example 2, when all the materials are added according to the highest standard, the cleaning efficiency is improved, but the corrosion potential is also increased, because the pH value in the solution is higher, the effect of part of the corrosion inhibitor is not obvious, and the damage to the cleaning material is unreasonable, so the comparative examples 1-3, the performance of the example 3 is obvious, and all indexes have no obvious defects.
In examples 4 to 9, it can be seen that the lack of relevant components in the relevant raw materials and processes adversely affects the cleaning effect of the cleaning agent and the cleaning products, wherein especially in the absence of surfactant, the contaminants are not effectively removed, and the cleaning efficiency is only 37%.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. The preparation method of the low-foam low-corrosion-rate inductance welding agent cleaning agent is characterized by comprising the following steps of:
weighing related raw materials according to a mass ratio and putting the raw materials into a reaction kettle; the raw materials comprise alkylphenol polyoxyethylene and octylphenol polyoxyethylene as two-component active agents, sodium carbonate as an alkaline agent, sodium tripolyphosphate as a heavy metal chelating agent, polyether modified organic silicon as a defoaming agent, and benzotriazole as a defoaming agent;
carrying out water bath stirring on the raw materials in the reaction kettle;
performing vacuum defoaming and vacuum stirring on the stirred mixed raw materials;
and standing, sealing and keeping out of the sun, and storing in a shade place to obtain the inductance welding agent cleaning agent for the chip packaging process.
2. The preparation method of the low-foaming low-corrosion-rate inductance welding agent cleaning agent as claimed in claim 1, wherein before the raw materials in the reaction kettle are stirred in water bath, the method further comprises the following steps:
weighing related raw materials according to a mass ratio, and putting the raw materials into a reaction kettle, wherein the raw materials comprise alkylphenol polyoxyethylene, octylphenol polyoxyethylene, sodium carbonate, triethanolamine, diethylene glycol monomethyl ether, sodium tripolyphosphate, a polyether modified organic silicon defoamer, benzotriazole and ionized water;
the raw materials in the reaction kettle are stirred in a water bath, and the method comprises the following steps:
firstly, starting and stirring triethanolamine, alkylphenol ethoxylates, octylphenol polyoxyethylene ether and diethylene glycol monomethyl ether;
then adding sodium carbonate, sodium phosphate, polyether modified organic silicon defoaming agent and deionized water;
the mixed raw materials after stirring are subjected to vacuum defoaming and vacuum stirring, and the method comprises the following steps:
placing the raw materials in a vacuum environment for defoaming;
and (4) carrying out secondary vacuum stirring on the defoamed raw materials.
3. The preparation method of the low-foaming low-corrosion-rate inductance welding agent cleaning agent as claimed in claim 2, is characterized in that: the method comprises the following steps of weighing related raw materials in a mass ratio: (alkylphenol polyoxyethylene ether: octylphenol polyoxyethylene ether (2): 5 to 15 percent.
4. The preparation method of the low-foaming low-corrosion-rate inductance welding agent cleaning agent as claimed in claim 2, is characterized in that: the method comprises the following steps of weighing related raw materials in a mass ratio: sodium carbonate: 5 to 15 percent.
5. The preparation method of the low-foaming low-corrosion-rate inductance welding agent cleaning agent as claimed in claim 2, is characterized in that: the method comprises the following steps of weighing related raw materials in a mass ratio: triethanolamine: 1 to 3 percent.
6. The preparation method of the low-foaming low-corrosion-rate inductance welding agent cleaning agent as claimed in claim 2, is characterized in that: the method comprises the following steps of weighing related raw materials in a mass ratio: diethylene glycol monomethyl ether: 3 to 5 percent.
7. The preparation method of the low-foaming low-corrosion-rate inductance welding agent cleaning agent as claimed in claim 2, is characterized in that: the method comprises the following steps of weighing related raw materials in a mass ratio: sodium tripolyphosphate: 0.6 to 2 percent.
8. The preparation method of the low-foaming low-corrosion-rate inductance welding agent cleaning agent as claimed in claim 2, is characterized in that: the method comprises the following steps of weighing related raw materials in a mass ratio: polyether modified silicone defoamer: 5 to 15 percent.
9. The preparation method of the low-foaming low-corrosion-rate inductance welding agent cleaning agent as claimed in claim 2, is characterized in that: the method comprises the following steps of weighing related raw materials in a mass ratio: benzotriazole: 5 to 15 percent.
10. The preparation method of the low-foaming low-corrosion-rate inductance welding agent cleaning agent as claimed in claim 2, is characterized in that: the mixed raw materials after stirring are subjected to vacuum defoaming and vacuum stirring, and the method comprises the following steps: and (3) placing the cleaning agent stirred in the water bath in a vacuum environment with the vacuum degree of 0.01-0.1MPa, and carrying out vacuum defoaming and secondary vacuum stirring on the cleaning agent for 10-30min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211499550.3A CN115851383A (en) | 2022-11-28 | 2022-11-28 | Preparation method of low-foaming low-corrosion-rate inductance welding agent cleaning agent |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211499550.3A CN115851383A (en) | 2022-11-28 | 2022-11-28 | Preparation method of low-foaming low-corrosion-rate inductance welding agent cleaning agent |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115851383A true CN115851383A (en) | 2023-03-28 |
Family
ID=85667112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211499550.3A Pending CN115851383A (en) | 2022-11-28 | 2022-11-28 | Preparation method of low-foaming low-corrosion-rate inductance welding agent cleaning agent |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115851383A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102580937A (en) * | 2011-12-21 | 2012-07-18 | 彭军宏 | Method for realizing live cleaning of secondary equipment |
| CN107574033A (en) * | 2017-09-04 | 2018-01-12 | 深圳市唯特偶新材料股份有限公司 | Used in electronic industry aqueous cleaning agent |
| CN109837145A (en) * | 2019-04-04 | 2019-06-04 | 深圳建实科技有限公司 | A kind of aqueous fluxes in electronic industry cleaning agent and preparation method thereof |
| CN110408480A (en) * | 2019-08-13 | 2019-11-05 | 蓝思科技（长沙）有限公司 | It is a kind of for the aqua type cleaning agent of fingerprint recognition mould-group circuit-board and its application |
| CN112522037A (en) * | 2020-12-11 | 2021-03-19 | 苏州柯仕达电子材料有限公司 | Neutral water-based cleaning agent for cleaning PCB and preparation method thereof |
-
2022
- 2022-11-28 CN CN202211499550.3A patent/CN115851383A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102580937A (en) * | 2011-12-21 | 2012-07-18 | 彭军宏 | Method for realizing live cleaning of secondary equipment |
| CN107574033A (en) * | 2017-09-04 | 2018-01-12 | 深圳市唯特偶新材料股份有限公司 | Used in electronic industry aqueous cleaning agent |
| CN109837145A (en) * | 2019-04-04 | 2019-06-04 | 深圳建实科技有限公司 | A kind of aqueous fluxes in electronic industry cleaning agent and preparation method thereof |
| CN110408480A (en) * | 2019-08-13 | 2019-11-05 | 蓝思科技（长沙）有限公司 | It is a kind of for the aqua type cleaning agent of fingerprint recognition mould-group circuit-board and its application |
| CN112522037A (en) * | 2020-12-11 | 2021-03-19 | 苏州柯仕达电子材料有限公司 | Neutral water-based cleaning agent for cleaning PCB and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101530321B1 (en) | Cleaner composition for removing lead-free soldering flux, and method for removing lead-free soldering flux | |
| US8877697B2 (en) | Cleaning agent for removal of, removal method for, and cleaning method for water-soluble, lead-free solder flux | |
| CN109370809B (en) | Low-foam water-based cleaning agent and cleaning method | |
| CN1411502A (en) | Detergent composition | |
| CN104893834A (en) | Water-based cleaning solution for cleaning printed circuit board and preparation method thereof | |
| CN112522037A (en) | Neutral water-based cleaning agent for cleaning PCB and preparation method thereof | |
| CN114106935B (en) | Water-based scaling powder cleaning agent, preparation method and application thereof | |
| CN110669592A (en) | Water-based flexible circuit board cleaning agent and preparation method thereof | |
| JP2017115033A (en) | Detergent composition for flux | |
| CN111171974A (en) | Normal-temperature water-based PCB cleaning agent and preparation method thereof | |
| JPH0457899A (en) | Detergent for rosing solder flux and method for washing rosin solder flux using said detergent | |
| JP5945914B2 (en) | Cleaning agent for removing flux residue | |
| KR100907568B1 (en) | Cleaning agent for removing solder flux and method for cleaning solder flux | |
| KR102419315B1 (en) | A cleaning composition for a lead-free soldering solvent, a cleaning method for a lead-free soldering solvent | |
| CN110724605B (en) | Environment-friendly water-based cleaning agent and preparation method thereof | |
| JP3025850B2 (en) | Flux cleaner | |
| CN115851383A (en) | Preparation method of low-foaming low-corrosion-rate inductance welding agent cleaning agent | |
| CN111909797A (en) | Cleaning agent for hard and brittle material wafer | |
| CN109370812B (en) | Low-volatility high-performance water-based cleaning agent and cleaning method | |
| CN111040888B (en) | Application of water-based cleaning agent with strong dispersing ability | |
| CN105018955A (en) | Water-based cleaning agent for printing steel mesh | |
| CN109401859B (en) | Water-based cleaning agent for rosin type soldering flux and cleaning method | |
| CN113583761A (en) | High-protection corrosion-resistant hydrocarbon cleaning agent for semiconductor cleaning and preparation method thereof | |
| CN111979055A (en) | Preparation method of cleaning agent for hard and brittle material wafer | |
| CN112592769A (en) | Low-VOC semiconductor chip cleaning agent and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 518000 room 1101-1105, building 6, Hengda fashion Huigu building (East District), Fulong Road, Henglang community, Dalang street, Longhua District, Shenzhen, Guangdong Applicant after: Cenke Technology (Shenzhen) Group Co.,Ltd. Address before: 518000 room 1101-1105, building 6, Hengda fashion Huigu building (East District), Fulong Road, Henglang community, Dalang street, Longhua District, Shenzhen, Guangdong Applicant before: SHENZHEN CENKER ENTERPRISE Ltd. |