CN115838965B - Process optimization method for molecular beam epitaxy growth HEMT epitaxial wafer - Google Patents
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Abstract
The invention provides a process optimization method for growing HEMT epitaxial wafers by molecular beam epitaxy, and relates to the technical field of semiconductor manufacturing. The method comprises the following steps: respectively growing epitaxial wafers by adopting a plurality of sample frames at rotating speeds; performing a square resistance test on each epitaxial wafer; calculating a relative standard deviation value of the resistance value and a corresponding index array; testing and calculating an index array when the epitaxial wafer is produced; calculating the correlation coefficient of the index array and the reference index array, and obtaining the corresponding reference rotating speed; and correcting the current rotating speed according to the relative relation between the reference rotating speed and the optimal rotating speed. And the epitaxial wafer is grown by adopting a plurality of sample frames at the rotating speed, so that the square resistance value is obtained, the corresponding relation between the reference index array and the reference rotating speed is further established, and the current rotating speed is optimized according to the correlation and the corresponding relation between the current index array and the reference index array during subsequent production, so that a great number of subsequent repeated tests are avoided, and the time cost and the material cost are saved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a process optimization method for growing HEMT epitaxial wafers by molecular beam epitaxy.
Background
In mass production of Molecular Beam Epitaxy (MBE), a plurality of substrates are typically carried simultaneously on one substrate carrier for mass molecular beam epitaxy, thereby improving production efficiency and reducing production costs. In this case, the in-chip uniformity of the epitaxial layer on the substrate sheet and the uniformity between sheets are a key index in mass production, and the quality of the uniformity directly affects the yield of the subsequent device manufacturing process.
Compound semiconductor-based High Electron Mobility Transistor (HEMT) epitaxial wafers are typically prepared by molecular beam epitaxy, and the doping concentration of the channel layer of the high electron mobility transistor device directly affects the pinch-off voltage of the device, which is a very important performance parameter of the HEMT device. In the molecular beam epitaxial growth process of the high electron mobility transistor epitaxial wafer, the doping uniformity of the planar doping layer and the thickness uniformity of the isolation layer can influence the doping concentration uniformity of the channel layer. Since the flow rates of the molecular beams ejected from the source furnace (e.g., si furnace) providing the dopant and the source furnace (e.g., ga furnace and Al furnace) providing the molecular beams required for the spacer layer are not uniformly distributed on the substrate carrier during the growth of the epitaxial layer in the molecular beam epitaxy apparatus, it is necessary to uniformly rotate the sample holder carrying the substrate carrier during the growth of the epitaxial layer in order to improve the uniformity of the epitaxial wafer, so that the equivalent beam flow rates of the various molecular beam sources actually reaching the substrate over a period of time are relatively uniform.
However, in the prior art, in order to improve the uniformity of epitaxial wafer growth, the rotation speed of the sample holder rotation can only be carried out by means of multiple fumbling tests, thereby greatly increasing the production test cost.
Disclosure of Invention
The invention aims to provide a method for solving the problem of optimizing the uniformity of molecular beam epitaxy growth of HEMT epitaxial wafers.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
the invention provides a process optimization method for growing HEMT epitaxial wafers by molecular beam epitaxy, which is used for optimizing the rotation speed of a sample frame of a molecular beam epitaxy device when the HEMT epitaxial wafers are grown by molecular beam epitaxy, wherein a plurality of substrate slice placing positions are arranged on a substrate supporting plate used in the molecular beam epitaxy device, and one substrate slice placing position which is not positioned in the center of the substrate supporting plate in the plurality of substrate slice placing positions is selected as a designated position, and the method comprises the following steps:
a plurality of HEMT epitaxial wafers with preset structures are grown at the designated positions respectively by adopting the rotation speeds of a plurality of sample frames so as to obtain a plurality of HEMT epitaxial wafers;
carrying out surface square resistance test on each epitaxial wafer of the HEMT epitaxial wafers to obtain square resistance values at a plurality of points on the surface of each epitaxial wafer, so as to obtain the square resistance values, and carrying out homogeneous correspondence between the positions of the selected points on each epitaxial wafer of the surface square resistance test;
for each epitaxial wafer in the plurality of HEMT epitaxial wafers, calculating relative standard deviation values of the plurality of square resistance values and corresponding index arrays, and determining a sample frame rotation speed R corresponding to an epitaxial wafer with the smallest relative standard deviation value in the plurality of HEMT epitaxial wafers m Taking the rotation speeds of the plurality of sample frames as reference rotation speeds, taking index arrays corresponding to the plurality of HEMT epitaxial wafers as reference index arrays, and taking the rotation speeds R of the sample frames m As the reference optimum rotation speed, a correspondence between a reference index array and the reference rotation speed is established, the index array being calculated by: calculating an average value r of the sheet resistance values at the plurality of points 0 Dividing the square resistance values into m groups of values according to the corresponding positions on the epitaxial wafer, wherein each group of values has n square resistance values, and the n square resistance values r in the ith group of values s ，i=1, 2, 3, ..., m，s=1, 2, 3,..., n，
Let the array t= [ T ] 1 , t 2 , ..., t m ]As an index array, m is an integer greater than 3, and n is an integer greater than 4;
when a substrate supporting plate is used for producing HEMT epitaxial wafers with preset structures in a molecular beam epitaxy device, if the current rotation speed of a sample frame is R 0 Testing and calculating an index array of the epitaxial wafer on the index bit, and taking the index array as a current index array;
calculating the correlation coefficient between the current index array and each reference index array, determining the reference index array corresponding to the correlation coefficient with the largest absolute value, and obtaining the corresponding reference rotation speed R according to the corresponding relation c ；
According to the corresponding reference rotation speed R c Relative to a reference optimal rotational speed for a current sample holder rotational speed R 0 Performing correction to obtain corrected sample holder rotation speed R 1 And the corrected sample holder rotational speed R 1 As the rotational speed of the sample holder at the next time of producing HEMT epitaxial wafers having a preset structure.
Alternatively, the sample holder rotational speed R1 is calculated by: r is R 1 =R 0 +(R m -R c )。
Optionally, in the surface sheet resistance test, for each epitaxial wafer, selecting P radial directions extending from the center of the epitaxial wafer to the circumference to divide the epitaxial wafer into P equal sector areas, and selecting Q points at equal intervals in each radial direction of the P radial directions to obtain
Point location, will->
The individual points are used as the points for surface sheet resistance test.
Alternatively, 4.ltoreq.P.ltoreq.10.
Alternatively, 6.ltoreq.Q.ltoreq.10.
Optionally, the correlation coefficient is a pearson correlation coefficient.
Optionally, the unit of the rotation speed of the sample holder is revolutions per minute, and the values of the rotation speeds of the plurality of sample holders are all integers and are within the following range: greater than or equal to 15 revolutions per minute and less than or equal to 35 revolutions per minute.
The beneficial effects of the invention include:
the process optimization method for growing HEMT epitaxial wafers by molecular beam epitaxy provided by the invention comprises the following steps: a plurality of HEMT epitaxial wafers with preset structures are grown at the designated positions respectively by adopting the rotation speeds of a plurality of sample frames so as to obtain a plurality of HEMT epitaxial wafers; performing a surface square resistance test on each epitaxial wafer of the plurality of HEMT epitaxial wafers to obtain square resistance values at a plurality of points on the surface of each epitaxial wafer, thereby obtaining a plurality of square resistance values, and performing a surface square resistance test on the positions of the plurality of points selected on each epitaxial waferThe epitaxial wafers are arranged between different epitaxial wafers correspondingly; for each epitaxial wafer in the plurality of HEMT epitaxial wafers, calculating relative standard deviation values of the plurality of square resistance values and corresponding index arrays, and determining a sample frame rotation speed R corresponding to an epitaxial wafer with the smallest relative standard deviation value in the plurality of HEMT epitaxial wafers m Taking the rotation speeds of the plurality of sample frames as reference rotation speeds, taking index arrays corresponding to the plurality of HEMT epitaxial wafers as reference index arrays, and taking the rotation speeds R of the sample frames m As the reference optimum rotation speed, a correspondence between a reference index array and the reference rotation speed is established, the index array being calculated by: calculating an average value r of the sheet resistance values at the plurality of points 0 Dividing the square resistance values into m groups of values according to the corresponding positions on the epitaxial wafer, wherein each group of values has n square resistance values, and the n square resistance values r in the ith group of values s ，i=1, 2, 3, ..., m，s=1, 2, 3,..., n，
Let the array t= [ T ] 1 , t 2 , ..., t m ]As an index array, m is an integer greater than 3, and n is an integer greater than 4; when a substrate supporting plate is used for producing HEMT epitaxial wafers with preset structures in a molecular beam epitaxy device, if the current rotation speed of a sample frame is R 0 Testing and calculating an index array of the epitaxial wafer on the index bit, and taking the index array as a current index array; calculating the correlation coefficient between the current index array and each reference index array, determining the reference index array corresponding to the correlation coefficient with the largest absolute value, and obtaining the corresponding reference rotation speed R according to the corresponding relation c The method comprises the steps of carrying out a first treatment on the surface of the According to the corresponding reference rotation speed R c Relative to a reference optimal rotational speed for a current sample holder rotational speed R 0 Performing correction to obtain corrected sample holder rotation speed R 1 And the corrected sample holder rotational speed R 1 As the rotational speed of the sample holder at the next time of producing HEMT epitaxial wafers having a preset structure. By taking outAnd when the subsequent production is carried out, correcting and optimizing the current sample frame rotating speed according to the correlation between the current index array and the reference index array and the corresponding relation obtained in advance, thereby avoiding a large number of subsequent repeated tests and greatly saving time cost and material cost.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments or the description of the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 shows a flow chart of a process optimization method for growing a HEMT epitaxial wafer by molecular beam epitaxy, which is provided by an embodiment of the invention;
FIG. 2 is a schematic plan view of a growth chamber of a molecular beam epitaxy apparatus according to an embodiment of the present invention;
fig. 3 is a schematic diagram illustrating point selection when an epitaxial wafer according to an embodiment of the present invention performs a surface sheet resistance test.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Compound semiconductor-based High Electron Mobility Transistor (HEMT) epitaxial wafers are typically prepared by molecular beam epitaxy, and the doping concentration of the channel layer of the high electron mobility transistor device directly affects the pinch-off voltage of the device, which is a very important performance parameter of the HEMT device. In the molecular beam epitaxial growth process of the high electron mobility transistor epitaxial wafer, the doping uniformity of the planar doping layer and the thickness uniformity of the isolation layer can influence the doping concentration uniformity of the channel layer. Since the flow rates of the molecular beams ejected from the source furnace (e.g., si furnace) providing the dopant and the source furnace (e.g., ga furnace and Al furnace) providing the molecular beams required for the spacer layer are not uniformly distributed on the substrate carrier during the growth of the epitaxial layer in the molecular beam epitaxy apparatus, it is necessary to uniformly rotate the sample holder carrying the substrate carrier during the growth of the epitaxial layer in order to improve the uniformity of the epitaxial wafer, so that the equivalent beam flow rates of the various molecular beam sources actually reaching the substrate over a period of time are relatively uniform. However, in the prior art, in order to improve the uniformity of epitaxial wafer growth, the rotation speed of the sample holder rotation can only be carried out by means of multiple fumbling tests, thereby greatly increasing the production test cost. Therefore, it is desirable to propose a process optimization method for molecular beam epitaxial growth of HEMT epitaxial wafers to achieve a fast determination of the optimal rotation rate of the sample holder.
Fig. 1 shows a flow chart of a process optimization method for growing a HEMT epitaxial wafer by molecular beam epitaxy, and as shown in fig. 1, the invention provides a process optimization method for growing a HEMT epitaxial wafer by molecular beam epitaxy, which is used for optimizing the rotation speed of a sample frame of a molecular beam epitaxy device when the HEMT epitaxial wafer is grown by molecular beam epitaxy.
A plurality of substrate placement positions are arranged on a substrate supporting plate used in the molecular beam epitaxy equipment, and one substrate placement position which is not positioned in the center of the substrate supporting plate in the plurality of substrate placement positions is selected as a designated position. Fig. 2 shows a schematic plan view of a growth chamber of a molecular beam epitaxy apparatus according to an embodiment of the present invention, in fig. 2, a substrate pallet 202 is carried by a sample holder in a chamber 201, and a source furnace 207 is located at a bottom circumference of the chamber 201, and it should be understood that a plurality of source furnaces may be further included at the bottom circumference of the chamber 201. For example, as shown in fig. 2, the substrate pallet 202 may carry four substrates 203, 204, 205, 206 simultaneously, it being understood that the substrate pallet 202 may also be a substrate pallet carrying other numbers and/or sizes of substrates. For example, the substrate placement bit corresponding to the substrate 203 may be selected as the specified bit.
The process optimization method for growing the HEMT epitaxial wafer by the molecular beam epitaxy provided by the embodiment of the invention comprises the following steps:
and step 101, respectively growing HEMT epitaxial wafers with preset structures at the designated positions by adopting the rotation speeds of a plurality of sample frames so as to obtain a plurality of HEMT epitaxial wafers.
Different sample holder rotational speeds can result in differences in the uniformity of epitaxial layers of HEMT epitaxial wafers having the same preset structure. The uniformity of epitaxial layers of HEMT epitaxial wafers at different positions on the same substrate supporting plate is also different, and in order to be comparable, epitaxial wafers at specified positions are selected for subsequent test analysis when the epitaxial wafers are grown under the condition of different sample holder rotation speeds. Optionally, the unit of the rotation speed of the sample holder is revolutions per minute, and the values of the rotation speeds of the plurality of sample holders are all integers and are within the following range: greater than or equal to 15 revolutions per minute and less than or equal to 35 revolutions per minute.
And 102, carrying out surface square resistance test on each epitaxial wafer of the HEMT epitaxial wafers to obtain square resistance values at a plurality of points on the surface of each epitaxial wafer, so as to obtain a plurality of square resistance values.
And the positions of the selected points on each epitaxial wafer for carrying out the surface sheet resistance test are corresponding to different epitaxial wafers. The surface sheet resistance test is a conventional nondestructive test technique in mass production of molecular beam epitaxy, and in mass production of HEMT epitaxial wafers, the surface sheet resistance test is generally performed for each HEMT epitaxial wafer produced. The uniformity of the grown epitaxial wafer can be reflected from the test result by performing surface sheet resistance tests of a plurality of points on the surface of the epitaxial wafer. If the uniformity of the grown epitaxial wafer is good, the uniformity of the square resistance values at the corresponding obtained plurality of points is good, and if the uniformity of the grown epitaxial wafer is poor, the deviation of the square resistance values at the corresponding obtained plurality of points is large. Typically, the selected test sites are distributed in a plurality of different areas on the epitaxial wafer, rather than being concentrated in a localized area on the epitaxial wafer.
Optionally, in the surface sheet resistance test, for each epitaxial wafer, selecting P radial directions extending from the center of the epitaxial wafer to the circumference to divide the epitaxial wafer into P equal sector areas, and selecting Q points at equal intervals in each radial direction of the P radial directions to obtain
Point location, will->
The individual points are used as the points for surface sheet resistance test. Alternatively, 4.ltoreq.P.ltoreq.10. For example, P may be any of 4, 5, 6, 7, 8, 9, 10. Alternatively, 6.ltoreq.Q.ltoreq.10. For example, Q may be any of 6, 7, 8, 9, 10. />
Fig. 3 is a schematic diagram illustrating point selection when an epitaxial wafer according to an embodiment of the present invention performs a surface sheet resistance test. As shown in fig. 3, the epitaxial wafer 303 is an epitaxial wafer obtained by epitaxial growth on the substrate 203, and 6 radial directions L1, L2, L3, L4, L5, and L6 extending circumferentially from the center point O of the epitaxial wafer 303 divide the epitaxial wafer into 6 equal sector areas, 6 points are selected at equal intervals in each radial direction (for example, in the radial direction L1) as S1, S2, S3, S4, S5, and S6, and other radial direction points are not shown, so that 36 points can be obtained, and then the surface sheet resistance test is performed at these 36 points. It should be understood that the selection of the points may be determined according to the size of the epitaxial wafer, and when the size of the epitaxial wafer is larger, more points may be selected so that the test points cover most of the area on the epitaxial wafer as much as possible, and when the size of the epitaxial wafer is smaller, relatively fewer points may be selected to save the test time.
And the positions of the selected points on each epitaxial wafer for carrying out the surface sheet resistance test are corresponding to different epitaxial wafers. The correspondence relationship between different epitaxial wafers herein is based on the position of the epitaxial wafer on the substrate support plate with respect to the center of the substrate support plate. Specifically, for example, the radial direction L1 of the epitaxial wafer 303 obtained under a certain sample holder rotation speed condition is directed to the center of the substrate support plate, and then the radial direction in which the center of the epitaxial wafer at the specified position obtained under other conditions is directed to the center of the substrate support plate is determined as the radial direction L1, and the positions of the respective points on the epitaxial wafer with respect to the radial direction L1 thereon are the same as the positions of the respective points on the epitaxial wafer 303 with respect to the radial direction L1 thereon.
The distribution rules of the surface square resistance values at various points on the epitaxial wafer with different uniformity are different. The surface square resistance values of a plurality of points are obtained through testing, and the distribution condition of the surface square resistance values can reflect the uniformity of the epitaxial wafer.
The uniformity of the epitaxial wafer with the minimum relative standard deviation value is optimal, so that the rotation speed R of the sample rack corresponding to the epitaxial wafer can be increased m As the target optimum rotation speed. Taking the rotation speeds of the plurality of sample frames as reference rotation speeds, taking index arrays corresponding to the plurality of HEMT epitaxial wafers as reference index arrays, and taking the rotation speeds R of the sample frames m As the reference optimal rotation speed, therefore, any epitaxial wafer is associated with a reference index array and a reference rotation speed, so that a corresponding relation between the reference index array and the reference rotation speed is established, and the index array is calculated by the following method: calculating an average value r of the sheet resistance values at the plurality of points 0 Dividing the plurality of sheet resistance values into m groups of values according to the corresponding positions on the epitaxial wafer, for example, dividing the plurality of sheet resistance values into groups according to the radial direction in which the test points are located, dividing the sheet resistance values of the points in the same radial direction into oneIt should be understood that the groups may be grouped according to other positional relationships, for example, a plurality of points located close to each other may be grouped into a group, or the like, as long as the grouping manners of the points on different epitaxial wafers are the same. Each group of values has n square resistance values, and the n square resistance values r in the ith group of values s ，i=1, 2, 3, ..., m，s=1, 2, 3,..., n，
Let the array t= [ T ] 1 , t 2 , ..., t m ]As an index array, m is an integer greater than 3, and n is an integer greater than 4. By calculating the index array, the index array can reflect the distribution condition of the square resistance value at different positions on the epitaxial wafer. By establishing the corresponding relation between the reference index array and the reference rotation speed and obtaining the reference optimal rotation speed, the method provides a data basis for optimizing the rotation speed of the sample frame in the subsequent HEMT epitaxial wafer production with the same structure.
104, when the substrate supporting plate is used for producing the HEMT epitaxial wafer with the preset structure in the molecular beam epitaxy equipment, if the current rotation speed of the sample holder is R 0 And testing and calculating an index array of the epitaxial wafer on the index bit, and taking the index array as a current index array.
When epitaxial wafers with the same structure are produced in batches in the follow-up process and the HEMT epitaxial wafers in the prior process, the surface square resistance value of the epitaxial wafers on the appointed position of the follow-up growth is obtained, an index array is calculated, and the uniformity of the epitaxial wafers can be reflected through the index array. It should be understood that the positions of the test points on the epitaxial wafer at the time of obtaining the index array correspond to the positions of the test points on the epitaxial wafer in step 102.
The similarity degree between the uniformity distribution condition of the epitaxial wafer corresponding to the current index array and the uniformity distribution condition of the epitaxial wafer corresponding to each reference index array can be obtained by calculating the correlation coefficient between the current index array and each reference index array. The uniformity distribution of the epitaxial wafer corresponding to the reference index array corresponding to the correlation coefficient with the largest absolute value can be considered to be closest to the uniformity distribution of the epitaxial wafer corresponding to the current index array. Optionally, the correlation coefficient is a pearson correlation coefficient.
After the reference index array closest to the current index array is calculated and obtained, the rotation speed R of the current sample frame is calculated according to the relative relation between the reference index array and the reference optimal rotation speed 0 Correction is performed, optionally, the sample holder rotational speed R1 is calculated by: r is R 1 =R 0 +(R m -R c ) Thereby the corrected sample holder rotation speed R can be used 1 As the rotational speed of the sample holder at the next time of producing HEMT epitaxial wafers having a preset structure.
In summary, according to the method, the HEMT epitaxial wafer with the preset structure is grown at the designated position by adopting the plurality of sample frame rotation speeds, the corresponding square resistance value is obtained through testing, the corresponding relation between the reference index array and the reference rotation speed is further established, and during subsequent production, the current sample frame rotation speed is corrected and optimized according to the correlation between the current index array and the reference index array and the corresponding relation obtained in advance, so that a large number of subsequent repeated tests are avoided, and the time cost and the material cost are greatly saved.
The above embodiments are only for illustrating the technical concept and features of the present invention, and are intended to enable those skilled in the art to understand the content of the present invention and implement the same, but not limit the scope of the present invention, and all equivalent changes or modifications made according to the spirit of the present invention should be included in the scope of the present invention.
Claims (5)
1. A process optimization method for growing HEMT epitaxial wafers by molecular beam epitaxy, wherein the method is used for optimizing a rotation speed of a sample holder of a molecular beam epitaxy device when the HEMT epitaxial wafers are grown by molecular beam epitaxy, a plurality of substrate slice placement positions are arranged on a substrate supporting plate used in the molecular beam epitaxy device, and one substrate slice placement position which is not positioned in the center of the substrate supporting plate in the plurality of substrate slice placement positions is selected as a designated position, and the method comprises:
a plurality of HEMT epitaxial wafers with preset structures are grown at the designated positions respectively by adopting the rotation speeds of a plurality of sample frames so as to obtain a plurality of HEMT epitaxial wafers;
carrying out surface square resistance test on each epitaxial wafer of the HEMT epitaxial wafers to obtain square resistance values at a plurality of points on the surface of each epitaxial wafer, so as to obtain the square resistance values, and carrying out homogeneous correspondence between the positions of the selected points on each epitaxial wafer of the surface square resistance test;
for each epitaxial wafer in the plurality of HEMT epitaxial wafers, calculating relative standard deviation values of the plurality of square resistance values and corresponding index arrays, and determining a sample frame rotation speed R corresponding to an epitaxial wafer with the smallest relative standard deviation value in the plurality of HEMT epitaxial wafers m Taking the rotation speeds of the plurality of sample frames as reference rotation speeds, taking index arrays corresponding to the plurality of HEMT epitaxial wafers as reference index arrays, and taking the rotation speeds R of the sample frames m As a reference optimum rotation speed, a correspondence relationship between a reference index array calculated by: calculating an average value r of the sheet resistance values at the plurality of points 0 According to the correspondence on the epitaxial waferDividing the plurality of square resistance values into m groups of values, each group of values having n square resistance values, for n square resistance values r in the ith group of values s ，i=1, 2, 3, ..., m，s=1, 2, 3, ..., n，
Let the array t= [ T ] 1 , t 2 , ..., t m ]As an index array, m is an integer greater than 3, and n is an integer greater than 4;
when the substrate supporting plate is used for producing HEMT epitaxial wafers with the preset structure in molecular beam epitaxy equipment, if the current rotation speed of the sample holder is R 0 Testing and calculating to obtain an index array of the epitaxial wafer on the designated bit, and taking the index array as a current index array;
calculating the correlation coefficient between the current index array and each reference index array, determining the reference index array corresponding to the correlation coefficient with the largest absolute value, and obtaining the corresponding reference rotation speed R according to the corresponding relation c ；
According to the corresponding reference rotation speed R c Relative to the reference optimal rotation speed, for the current sample holder rotation speed R 0 Performing correction to obtain corrected sample holder rotation speed R 1 And comparing the corrected sample holder rotational speed R 1 As the rotation speed of the sample rack when the HEMT epitaxial wafer with the preset structure is produced next time;
sample holder rotational speed R 1 Obtained by calculation of the formula: r is R 1 =R 0 +(R m -R c )；
In the surface sheet resistance test, for each epitaxial wafer, P radial directions extending from the center of the epitaxial wafer to the circumference are selected to divide the epitaxial wafer into P equal sector areas, and Q points are selected at equal intervals in each radial direction of the P radial directions, so that the epitaxial wafer is obtained
A personal point location, said ++>
The individual points are used as the points for surface sheet resistance test.
2. The process optimization method for growing HEMT epitaxial wafers by molecular beam epitaxy according to claim 1, wherein P is more than or equal to 4 and less than or equal to 10.
3. The process optimization method for growing HEMT epitaxial wafers by molecular beam epitaxy according to claim 2, wherein Q is more than or equal to 6 and less than or equal to 10.
4. The process optimization method for molecular beam epitaxy HEMT epitaxial wafer according to claim 1, wherein the correlation coefficient is pearson correlation coefficient.
5. The process optimization method for molecular beam epitaxial growth of HEMT epitaxial wafer according to claim 1, wherein the unit of the rotation speed of the sample holder is rpm, and the values of the rotation speeds of the plurality of sample holders are integers and are within the following ranges: greater than or equal to 15 revolutions per minute and less than or equal to 35 revolutions per minute.
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