CN113035697B - Method for optimizing epitaxial growth process parameters of high electron mobility device - Google Patents

Method for optimizing epitaxial growth process parameters of high electron mobility device Download PDF

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CN113035697B
CN113035697B CN202110596527.5A CN202110596527A CN113035697B CN 113035697 B CN113035697 B CN 113035697B CN 202110596527 A CN202110596527 A CN 202110596527A CN 113035697 B CN113035697 B CN 113035697B
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heating power
electron mobility
power ratio
high electron
mobility device
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CN113035697A (en
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郭帅
冯巍
杜全钢
谢小刚
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Xinlei semiconductor technology (Suzhou) Co.,Ltd.
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Epi Solution Technology Co ltd
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Abstract

The invention provides a method for optimizing epitaxial growth process parameters of a high-electron-mobility device, and relates to the technical field of semiconductor manufacturing. The method comprises the following steps: carrying out molecular beam epitaxial growth under a preset heating power ratio to obtain a high electron mobility device epitaxial wafer; measuring a photoluminescence full width at half maximum two-dimensional map across the entire epitaxial wafer; identifying a boundary in the two-dimensional map, and calculating a boundary distance; and determining the heating power ratio adopted in the next epitaxial growth according to the corresponding relation between the heating power ratio and the boundary distance. By obtaining the photoluminescence full-width-at-half-maximum two-dimensional map of the test sample, the corresponding boundary distance is further obtained, and then the optimized heating power ratio is obtained through calculation according to the corresponding relation between the heating power ratio and the boundary distance, so that the rapid optimization and adjustment of the heating power ratio are realized, the consumption of a substrate and an equipment machine caused by repeated tests is avoided, the production efficiency is improved, and the production cost is reduced.

Description

Method for optimizing epitaxial growth process parameters of high electron mobility device
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a method for optimizing epitaxial growth process parameters of a high-electron-mobility device.
Background
In mass production of Molecular Beam Epitaxy (MBE), a plurality of substrates are generally simultaneously carried on one substrate pallet for batch molecular beam epitaxy growth, thereby improving production efficiency and reducing production costs. In this case, the uniformity of the epitaxial layer on the substrate sheet is a key indicator in mass production.
Compound semiconductor-based high electron mobility device (HEMT) epitaxial wafers are typically fabricated using molecular beam epitaxial growth, the material quality of the channel layer of the HEMT and the interface quality between the various epitaxial layers determine the overall performance of the device, and the material quality and interface quality are closely related to the heating temperature of the substrate. In the molecular beam epitaxial growth process of the high electron mobility device, a substrate heating device of molecular beam epitaxial equipment heats a substrate, and the actual temperature of the substrate is determined by the heating power of the substrate heating device, so that the quality of an epitaxial wafer of the high electron mobility device is seriously influenced. In the molecular beam epitaxy apparatus, a plurality of heating coils are generally provided to adjust the uniformity of the heating temperatures of the plurality of substrates by changing the heating powers of the different heating coils.
However, in the prior art, in order to improve the uniformity of heating the substrate, the adjustment of the heating power to the heating coil can be performed only by means of a plurality of trial and error tests, which greatly increases the production test cost.
Disclosure of Invention
The invention aims to provide an optimization method of epitaxial growth process parameters of a high electron mobility device aiming at the defects of the prior art so as to solve the problem of optimization and adjustment of substrate heating temperature uniformity in large-scale production of epitaxial wafers of the high electron mobility device.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
the invention provides an optimization method of epitaxial growth process parameters of a high electron mobility device, which is used for optimizing and adjusting the epitaxial growth process parameters of an epitaxial wafer of the high electron mobility device prepared by molecular beam epitaxy equipment, wherein a supporting plate used for bearing a substrate in the molecular beam epitaxy equipment is a circular supporting plate, the distance between the center of the substrate on the supporting plate and the circle center of the supporting plate is L, and the L is the distance between the center of the substrate on the supporting plate and the circle center of the supporting plate>0, a heating assembly used for heating the substrate carried on the supporting plate in the molecular beam epitaxy device comprises an inner ring electric heating coil and an outer ring electric heating coil which are annularly arranged; in the process of molecular beam epitaxial growth of the high electron mobility device on the substrate, the heating power ratio of the outer ring electric heating coil to the inner ring electric heating coil is set to be Tr；
The method comprises the following steps:
using molecular beam epitaxy equipment at a heating power ratio TrEqual to the preset heating power ratio Tr0To the pallet under the condition ofThe substrate is subjected to molecular beam epitaxial growth of the high electron mobility device to obtain a high electron mobility device epitaxial wafer;
performing photoluminescence spectrum measurement on a channel layer of the high electron mobility device epitaxial wafer to obtain a peak wavelength in a photoluminescence spectrum, and measuring a photoluminescence full width at half maximum two-dimensional map spanning the surface of the whole epitaxial wafer aiming at the peak wavelength, wherein the photoluminescence full width at half maximum two-dimensional map is used for representing the full width at half maximum distribution condition of photoluminescence test on each position on the whole epitaxial wafer aiming at the peak wavelength;
identifying a boundary in the photoluminescence full-width-at-half-maximum two-dimensional map, and calculating a boundary distance L of the boundary, wherein the boundary is a full-width-at-half-maximum value boundary determined based on the change situation of the full-width-at-half-maximum value in the photoluminescence full-width-at-half-maximum two-dimensional map, the boundary distance L is used for indicating the distance from the boundary to the center of a supporting plate under the condition that the high-electron-mobility device epitaxial wafer is assumed to be at a growth position, and the growth position indicates the placement position of the high-electron-mobility device epitaxial wafer when molecular beam epitaxy is performed on the supporting plate;
based on the boundary distance L and the preset heating power ratio Tr0And determining a new heating power ratio used for next molecular beam epitaxial growth of the high electron mobility device according to a corresponding relationship between the heating power ratio and the boundary distance obtained in advance,
the correspondence between the heating power ratio and the dividing distance is obtained as follows:
for a plurality of different heating power ratios TrRespectively carrying out molecular beam epitaxial growth on the high electron mobility devices to obtain a plurality of high electron mobility device epitaxial wafers;
measuring a photoluminescence full-width-at-half-maximum two-dimensional map across the entire epitaxial wafer surface for the channel layer of each of the plurality of high electron mobility device epitaxial wafers, respectively, to obtain a plurality of photoluminescence full-width-at-half-maximum two-dimensional maps;
identifying a dividing line in each of the plurality of photoluminescence full-width-half-maximum two-dimensional maps to obtain a plurality of dividing lines, and calculating a dividing distance for each of the plurality of dividing lines to obtain a plurality of dividing distances;
obtaining the plurality of different heating power ratios T by means of numerical fittingrAnd a correspondence between the plurality of division distances.
Optionally, the substrate is one of the following sized substrates: 2 inches, 3 inches, 4 inches, 6 inches.
Optionally, a plurality of substrates of the same size are arranged in a ring-like manner on the carrier around the center of the carrier.
Optionally, identifying a cut-off in the photoluminescence full-width half-maximum two-dimensional map and calculating a cut-off distance L of the cut-off comprises:
assuming that the high electron mobility device epitaxial wafer is at a growth position, taking a linear direction in which the center of the high electron mobility device epitaxial wafer and the circle center of the supporting plate are located as a reference direction;
extracting a reference full-width-at-half-maximum curve from the photoluminescence full-width-at-half-maximum two-dimensional map, wherein the reference full-width-at-half-maximum curve is a curve consisting of all full-width-at-half-maximum values in the photoluminescence full-width-at-half-maximum two-dimensional map along a reference direction;
carrying out normalization processing on the reference full width at half maximum curve to obtain a normalized reference full width at half maximum curve;
extracting an average value of full width at half maximum values corresponding to a flat part in a normalized reference full width at half maximum curve, taking the average value as a standard value, and determining a position in a photoluminescence full width at half maximum two-dimensional map corresponding to a position on the normalized reference full width at half maximum curve, wherein the numerical value is equal to the standard value h, as a standard point, wherein 1< h < 1.1;
assuming that the high electron mobility device epitaxial wafer is at the growth position, taking a curve which takes the center of the supporting plate as the center of a circle and passes through the standard point and the intersection of the circular pattern and the high electron mobility device epitaxial wafer as a boundary, calculating the distance between the boundary and the center of the supporting plate, and determining the distance as a boundary distance L.
Optionally, identifying a cut-off in the photoluminescence full-width half-maximum two-dimensional map and calculating a cut-off distance L of the cut-off comprises:
determining a circular area on the supporting plate by taking the circle center of the supporting plate as the circle center and r as the radius, so as to obtain an overlapping area between the circular area and the high electron mobility device epitaxial wafer at the growth position, wherein Rmin < r is less than or equal to Rmax, Rmin is equal to the distance between the point of the high electron mobility device epitaxial wafer at the growth position, which is the closest distance to the circle center of the supporting plate, and Rmax is equal to the distance between the point of the high electron mobility device epitaxial wafer at the growth position, which is the farthest distance from the circle center of the supporting plate, and the circle center of the supporting plate;
r is gradually increased from small to large by a preset step length, and a corresponding overlapping area is determined respectively for each r value;
aiming at each r value, calculating the average value of the full width at half maximum value of the corresponding area of the corresponding overlapping area in the photoluminescence full width at half maximum two-dimensional map, thereby obtaining a variation relation curve of the average value along with the r value;
carrying out normalization processing on the change relation curve to obtain a normalized change relation curve;
extracting an average value of full width values of half peaks corresponding to flat parts in the normalized variation relation curve, taking the average value as a standard value, and determining a r value corresponding to a position where a numerical value on the normalized variation relation curve is equal to the standard value m as a boundary radius, wherein 1< m < 1.05;
and taking the circle center of the supporting plate as the circle center, taking the intersection curve of the circular graph with the boundary radius as the radius and the high electron mobility device epitaxial wafer at the growth position as a boundary, and taking the boundary radius as a boundary distance L.
Optionally, the preset step = (Rmax-Rmin)/N, where N is a positive integer, and N ≧ 10.
Optionally, the plurality of different heating power ratios T are obtained by means of numerical fittingrAnd the corresponding relation between the plurality of demarcation distances comprises the following steps: obtaining the different heating power ratios T by a least square method in a polynomial fitting moderAnd a correspondence between the plurality of division distances.
Optionally, based on the dividing distance L and the preset heating power ratio Tr0And determining a new heating power ratio adopted for next molecular beam epitaxial growth of the high electron mobility device according to a corresponding relation between the heating power ratio and the boundary distance, which is obtained in advance, and the new heating power ratio comprises the following steps:
calculating the distance Lm between the point on the epitaxial wafer of the high electron mobility device, which is farthest from the center of the supporting plate, and the center of the supporting plate;
according to the corresponding relation between the heating power ratio and the boundary distance which are obtained in advance, respectively determining a heating power ratio T1 corresponding to the boundary distance L and a heating power ratio T2 corresponding to the distance Lm;
based on the heating power ratio T1, the heating power ratio T2 and the preset heating power ratio Tr0And calculating and determining a new heating power ratio Tn adopted in the next molecular beam epitaxial growth of the high electron mobility device.
Optionally, based on the heating power ratio T1, the heating power ratio T2 and the preset heating power ratio Tr0Calculating and determining a new heating power ratio Tn adopted in the next molecular beam epitaxial growth of the high electron mobility device, wherein the new heating power ratio Tn comprises the following steps:
calculating a new heating power ratio Tn used for next molecular beam epitaxy growth of the high electron mobility device according to the following formula:
Tn=a*T2/T1*Tr0wherein a is a preset constant coefficient, and a>0。
Optionally, a = 1.
The beneficial effects of the invention include:
the method for optimizing the epitaxial growth process parameters of the high electron mobility device comprises the step of utilizing molecular beam epitaxy equipment to optimize the parameters in a heating power ratio TrEqual to the preset heating power ratio Tr0Performing molecular beam epitaxial growth of the high electron mobility device on the substrate on the supporting plate under the condition to obtain a high electron mobility device epitaxial wafer; performing photoluminescence spectrum measurement on the channel layer of the high electron mobility device epitaxial wafer to obtainMeasuring a photoluminescence full width at half maximum two-dimensional map across the surface of the whole epitaxial wafer for the peak wavelength, wherein the photoluminescence full width at half maximum two-dimensional map is used for representing the full width at half maximum distribution condition of photoluminescence tests on each position on the whole epitaxial wafer for the peak wavelength; identifying a boundary in the photoluminescence full-width-at-half-maximum two-dimensional map, and calculating a boundary distance L of the boundary, wherein the boundary is a full-width-at-half-maximum value boundary determined based on the change situation of the full-width-at-half-maximum value in the photoluminescence full-width-at-half-maximum two-dimensional map, the boundary distance L is used for indicating the distance from the boundary to the center of a supporting plate under the condition that the high-electron-mobility device epitaxial wafer is assumed to be at a growth position, and the growth position indicates the placement position of the high-electron-mobility device epitaxial wafer when molecular beam epitaxy is performed on the supporting plate; based on the boundary distance L and the preset heating power ratio Tr0And determining a new heating power ratio adopted in the next molecular beam epitaxial growth of the high electron mobility device according to a corresponding relation between the heating power ratio and the boundary distance, which is obtained in advance, wherein the corresponding relation between the heating power ratio and the boundary distance is obtained by the following method: for a plurality of different heating power ratios TrRespectively carrying out molecular beam epitaxial growth on the high electron mobility devices to obtain a plurality of high electron mobility device epitaxial wafers; measuring a photoluminescence full-width-at-half-maximum two-dimensional map across the entire epitaxial wafer surface for the channel layer of each of the plurality of high electron mobility device epitaxial wafers, respectively, to obtain a plurality of photoluminescence full-width-at-half-maximum two-dimensional maps; identifying a dividing line in each of the plurality of photoluminescence full-width-half-maximum two-dimensional maps to obtain a plurality of dividing lines, and calculating a dividing distance for each of the plurality of dividing lines to obtain a plurality of dividing distances; obtaining the plurality of different heating power ratios T by means of numerical fittingrAnd a correspondence between the plurality of division distances. Obtaining a photoluminescence full-width at half maximum two-dimensional map of a test sample to further obtain a corresponding dividing distance, and then obtaining a corresponding relation between the heating power ratio and the dividing distance according to the pre-established corresponding relationAnd calculating to obtain an optimized heating power ratio. In order to improve the uniformity of the heating temperature of the substrate, the rapid optimization and adjustment of the heating power ratio are realized, the huge consumption of the substrate and equipment caused by repeated tests is avoided, the production efficiency is improved, and the production cost is reduced.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed for the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic structural diagram illustrating a support plate in a molecular beam epitaxy apparatus according to an embodiment of the present invention;
fig. 2 is a schematic flow chart illustrating a method for optimizing parameters of an epitaxial growth process of a high electron mobility device according to an embodiment of the present invention;
fig. 3 is a schematic diagram showing a two-dimensional spectrum of photoluminescence full width at half maximum of an epitaxial wafer of a high electron mobility device provided by an embodiment of the invention;
figure 4 shows a schematic diagram of a two-dimensional map of the photoluminescence full width at half maximum of a high electron mobility device epitaxial wafer in a growth position provided by an embodiment of the invention;
fig. 5 shows a normalized reference full width half maximum curve along the reference direction in fig. 4.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Compound semiconductor-based high electron mobility device (HEMT) epitaxial wafers are typically fabricated using molecular beam epitaxial growth, the material quality of the channel layer of the HEMT and the interface quality between the various epitaxial layers determine the overall performance of the device, and the material quality and interface quality are closely related to the heating temperature of the substrate. In the molecular beam epitaxial growth process of the high electron mobility device, a substrate heating device of molecular beam epitaxial equipment heats a substrate, and the actual temperature of the substrate is determined by the heating power of the substrate heating device, so that the quality of an epitaxial wafer of the high electron mobility device is seriously influenced. In the molecular beam epitaxy apparatus, a plurality of heating coils are generally provided to adjust the uniformity of the heating temperatures of the plurality of substrates by changing the heating powers of the different heating coils. However, in the prior art, in order to improve the uniformity of heating the substrate, the adjustment of the heating power to the heating coil can be performed only by means of a plurality of trial and error tests, which greatly increases the production test cost. Therefore, it is desirable to provide an optimized method capable of adjusting the heating power of the heating coil, so as to reduce the number of tests and the production and test costs while improving the uniformity of the heating temperature of the plurality of substrates on the pallet.
The embodiment of the invention provides an optimization method of epitaxial growth process parameters of a high electron mobility device, which is used for optimizing and adjusting the epitaxial growth process parameters of an epitaxial wafer of the high electron mobility device prepared by molecular beam epitaxy equipment. Fig. 1 is a schematic structural diagram of a carrier in a molecular beam epitaxy apparatus according to an embodiment of the present invention, and as shown in fig. 1, a carrier 100 for carrying a substrate in the molecular beam epitaxy apparatus is a circular carrier. The carrier 100 may be provided with a plurality of through holes for simultaneously carrying a plurality of substrates, and optionally, a plurality of substrates of the same size are arranged on the carrier 100 in a ring shape around the center of the carrier 100. For example, fig. 1 shows that the supporting plate 100 is provided with a through hole 101, a through hole 102, a through hole 103 and a through hole 104. Each through hole may carry a correspondingly sized substrate. The position of the substrate on the carrier 100 is determined by the position of the through-holes. Optionally, the substrate is one of the following sized substrates: 2 inches, 3 inches, 4 inches, 6 inches.
Embodiments of the present invention will be described in detail below assuming that a substrate is placed at the position of the through-hole 101. It should be understood that other through holes may be disposed on the pallet 100, and the substrate for implementing the optimization method according to the embodiment of the present invention may be disposed on other through holes besides the through hole 101, as long as the center of the substrate is not concentric with the center of the pallet.
As shown in FIG. 1, the distance between the center O1 of the substrate on the pallet and the center O of the pallet is L, and L>0, a heating assembly used for heating the substrate carried on the supporting plate 100 in the molecular beam epitaxy device comprises an inner ring electric heating coil and an outer ring electric heating coil which are annularly arranged; in the process of molecular beam epitaxial growth of the high electron mobility device on the substrate, the heating power ratio of the outer ring electric heating coil to the inner ring electric heating coil is set to be Tr。
In practical use, the heating power of the inner ring electric heating coil is usually fixed and is adjusted by adjusting the heating power ratio TrAdjustment of the heating power of the outer annular electric heating coil can be achieved, thereby adjusting the temperature uniformity of the substrate on the pallet 100.
Fig. 2 is a schematic flow chart illustrating a method for optimizing parameters of an epitaxial growth process of a high electron mobility device according to an embodiment of the present invention. As shown in fig. 2, the optimization method includes:
step 201: using molecular beam epitaxy equipment at a heating power ratio TrEqual to the preset heating power ratio Tr0Performing molecular beam epitaxial growth of the high electron mobility device on the substrate on the supporting plate under the condition to obtain the high electron mobility device epitaxial wafer.
In practical application, the heating power ratio T is presetr0For a set initial heating power ratio, the preset heating power ratio Tr0Can be obtained empirically and can also be determined by referring to other process parameters of epitaxial wafer growth. In general, the heating power ratio T is preset for the initial growth of the epitaxial wafer of the high electron mobility device with a specific structurer0Is usually not set upThe requirement of substrate heating uniformity is met, in the prior art, the heating power ratio needs to be changed continuously to carry out multiple growth tests so as to find out the heating power ratio meeting the requirement, and the waste of the substrate and the machine time is caused. According to the method provided by the invention, only one growth test is needed, and the heating power ratio which can meet the requirement of the substrate heating uniformity can be determined according to the test result of the growth test without multiple tests, so that the production cost is saved. The heating power ratio T to the preset heating power ratio T will be described in detailr0The testing process and the process parameter optimizing and adjusting process of the epitaxial wafer of the high electron mobility device grown in the next step.
Step 202: photoluminescence spectroscopy measurements are made for a channel layer of a high electron mobility device epitaxial wafer to obtain peak wavelengths in the photoluminescence spectra, and for the peak wavelengths, a photoluminescence full width at half maximum two-dimensional map is measured across the entire epitaxial wafer surface.
The photoluminescence full width at half maximum two-dimensional map is used to represent the full width at half maximum distribution of photoluminescence measurements for each position across the epitaxial wafer for the peak wavelength. For example, photoluminescence measurements can be performed using a photoluminescence tester manufactured by Nanometrics corporation, and the photoluminescence full width at half maximum two-dimensional spectrum described in this application corresponds to the full width at half maximum mapping spectrum in the data of the test results of the photoluminescence tester. Since 2-dimensional electron gas (2 DEG) exists in the channel layer of the high electron mobility device, information of the 2DEG can be reflected by a Photoluminescence (PL) spectroscopy method. The full width at half maximum (FWHM) of the PL spectrum peak can be used to reflect the roughness of the epitaxial layer interface and the scattering of the 2DEG by impurities, typically the higher the heating temperature of the substrate, the lower the roughness of the epitaxial layer interface, the smaller the FWHM, and the higher the mobility of the 2 DEG. Fig. 3 is a schematic diagram showing a photoluminescence full width at half maximum two-dimensional spectrum of an epitaxial wafer of a high electron mobility device provided by the embodiment of the invention. The two-dimensional plot of the photoluminescence full width at half maximum in FIG. 3 shows the heating power ratio T at the preset heating power ratior0The substrate temperature uniformity on the whole of the epitaxial wafer of the low-growth high-electron-mobility device is poor. As shown in FIG. 3, the photoluminescence full width at half maximum two-dimensional spectrum 110 is presentIn the uniform region 111 where the FWHM is uniform (indicating that the substrate temperature uniformity in this region on the epitaxial wafer is good) and the graded region 112 where the FWHM is graded (indicating that the substrate temperature uniformity in this region on the epitaxial wafer is poor), there is a boundary 113 between the uniform region 111 and the graded region 112. The shape of the dividing line 113 generally exhibits an arc shape, and the shape and position of the dividing line 113 are related to the position of the substrate on the pallet and the heating power ratio.
Step 203: a boundary in the photoluminescence full-width-at-half-maximum two-dimensional map is identified and a demarcation distance L of the boundary is calculated.
The boundary line is a half-peak full-width value boundary line determined based on the change situation of the half-peak full-width value in the photoluminescence full-width half-maximum two-dimensional map, the boundary distance L is used for indicating the distance between the boundary line and the center of the supporting plate under the condition that the high-electron-mobility device epitaxial wafer is supposed to be at the growth position, and the growth position indicates the placement position of the high-electron-mobility device epitaxial wafer when molecular beam epitaxial growth is carried out on the supporting plate. Specifically, the boundary here is the boundary 113 shown in fig. 3. Assuming that the epitaxial wafer is in the growth position on the pallet (i.e., assuming that the selected through holes in the pallet and the relative angle between the epitaxial wafer itself and the pallet are all identical to those when the epitaxial wafer was grown before), the shape of the boundary line 113 is typically an arc of a circle centered on the center of the pallet, so the distance of the calculated boundary line from the center of the pallet can be measured and referred to as the boundary distance L. Ideally, if the boundary line in the photoluminescence full width at half maximum two-dimensional map of the epitaxial wafer cannot be identified, that is, the FWHM value on the entire photoluminescence full width at half maximum two-dimensional map is a uniform region, the distance between the position on the epitaxial wafer farthest from the center of the supporting plate and the center of the supporting plate is set as the boundary distance of the epitaxial wafer, which indicates that the substrate heating temperature uniformity under the condition is good, and the heating power ratio under the condition can be directly used as the heating power ratio used in the next growth.
Step 204: based on the boundary distance L and the preset heating power ratio Tr0And according to the pre-obtained heating power ratio and the dividing distanceDetermining a new heating power ratio adopted for next molecular beam epitaxy growth of the high electron mobility device.
As shown in fig. 3, it is understood that the closer the boundary 113 between the uniform region 111 and the gradation region 112 is to the upper side (that is, the larger the uniform region 111, the smaller the gradation region 112), the better the heating temperature uniformity of the entire epitaxial wafer as a whole. When the epitaxial wafer is in the growth position, the center of the supporting plate is closer to one side of the uniform area 111, namely the center of the supporting plate is positioned at the lower side of the map in fig. 3. When the boundary 113 is at the top in fig. 3, i.e., the boundary distance is the largest (equal to Lmax), the overall heating temperature uniformity of the entire epitaxial wafer is the best. At a predetermined heating power ratio Tr0After the boundary distance L is obtained, in order to adjust the boundary distance from the boundary distance L to the maximum distance Lmax, the heating power ratio required to be adjusted from the preset heating power ratio T may be calculated from the correspondence between the heating power ratio and the boundary distance obtained in advancer0And adjusting the adjusted target heating power ratio, and taking the calculated target heating power ratio as a new heating power ratio adopted in next molecular beam epitaxial growth of the high electron mobility device.
Wherein, the corresponding relation between the heating power ratio and the dividing distance is obtained by the following method: for a plurality of different heating power ratios TrRespectively carrying out molecular beam epitaxial growth on the high electron mobility devices to obtain a plurality of high electron mobility device epitaxial wafers; measuring a photoluminescence full-width-at-half-maximum two-dimensional map across the entire epitaxial wafer surface for the channel layer of each of the plurality of high electron mobility device epitaxial wafers, respectively, to obtain a plurality of photoluminescence full-width-at-half-maximum two-dimensional maps; identifying a dividing line in each of the plurality of photoluminescence full-width-half-maximum two-dimensional maps to obtain a plurality of dividing lines, and calculating a dividing distance for each of the plurality of dividing lines to obtain a plurality of dividing distances; obtaining the plurality of different heating power ratios T by means of numerical fittingrAnd a correspondence between the plurality of division distances. In the usual case of the use of a magnetic tape,after a plurality of tests are carried out on one molecular beam epitaxy device to obtain the corresponding relation between the heating power ratio and the boundary distance, the relative relation contained in the corresponding relation is unchanged, so that the corresponding relation does not need to be repeatedly obtained when the subsequent high electron mobility devices with different epitaxial layer structures are subjected to epitaxial growth.
In summary, the corresponding dividing distance is obtained by obtaining the photoluminescence full width at half maximum two-dimensional map of the test sample, and then the optimized heating power ratio is calculated and obtained according to the corresponding relationship between the heating power ratio and the dividing distance which are established in advance. In order to improve the uniformity of the heating temperature of the substrate, the rapid optimization and adjustment of the heating power ratio are realized, the huge consumption of the substrate and equipment caused by repeated tests is avoided, the production efficiency is improved, and the production cost is reduced.
Figure 4 shows a schematic diagram of a two-dimensional map of the photoluminescence full width at half maximum of a high electron mobility device epitaxial wafer in a growth position provided by an embodiment of the invention; fig. 5 shows a normalized reference full width half maximum curve along the reference direction in fig. 4. An embodiment of calculating the boundary distance L in the present invention will be described with reference to fig. 4 and 5.
Specifically, identifying a boundary in a photoluminescence full width at half maximum two-dimensional map and calculating a boundary distance L of the boundary comprises: assuming that the high electron mobility device epitaxial wafer is at a growth position (as shown in fig. 4), taking a straight line direction where a center O1 of the high electron mobility device epitaxial wafer and a circle center O of the supporting plate are located as a reference direction ref, and intersection points of the reference direction ref and the high electron mobility device epitaxial wafer are a point a and a point B, where the point a is close to the circle center O of the supporting plate, the point B is far away from the circle center O of the supporting plate, and the intersection point of the reference direction ref and a boundary line is a point C; extracting a reference full-width-at-half-maximum curve from the photoluminescence full-width-at-half-maximum two-dimensional map, wherein the reference full-width-at-half-maximum curve is a curve consisting of all full-width-at-half-maximum values in the photoluminescence full-width-at-half-maximum two-dimensional map along a reference direction; normalizing the reference full width at half maximum curve to obtain a normalized reference full width at half maximum curve (as shown in fig. 5); in fig. 5, the flat portion 151 corresponds to data from a point a to a point C in the reference direction ref in fig. 4, and the rising portion 152 corresponds to data from a point C to a point B in the reference direction ref in fig. 4; extracting an average value of full width at half maximum values corresponding to the flat part 151 in the normalized reference full width at half maximum curve, taking the average value as a standard value, and determining a position in the photoluminescence full width at half maximum two-dimensional map corresponding to a position on the normalized reference full width at half maximum curve where the numerical value is equal to the standard value h as a standard point, wherein 1< h <1.1, and the determined standard point is the point C; assuming that the high electron mobility device epitaxial wafer is at a growth position, taking the circle center of the supporting plate as the circle center, taking the curve of the intersection of the circular graph passing through the standard point and the high electron mobility device epitaxial wafer as a boundary line, namely taking O as the circle center, and taking the curve of the intersection of the circular graph 105 passing through C and the high electron mobility device epitaxial wafer as a boundary line; the distance between the dividing line and the center of the circle of the pallet is calculated and determined as the dividing distance L (here the dividing distance L is practically equal to the length of the line segment OC).
Another embodiment of calculating the boundary distance L in the present invention will be described below. Optionally, identifying a cut-off in the photoluminescence full-width half-maximum two-dimensional map and calculating a cut-off distance L of the cut-off comprises: determining a circular area on the supporting plate by taking the circle center of the supporting plate as the circle center and r as the radius, so as to obtain an overlapping area between the circular area and the high electron mobility device epitaxial wafer at the growth position, wherein Rmin < r is less than or equal to Rmax, Rmin is equal to the distance between the point of the high electron mobility device epitaxial wafer at the growth position, which is the closest distance to the circle center of the supporting plate, and Rmax is equal to the distance between the point of the high electron mobility device epitaxial wafer at the growth position, which is the farthest distance from the circle center of the supporting plate, and the circle center of the supporting plate; r is gradually increased from small to large by a preset step length, and a corresponding overlapping area is determined respectively for each r value; aiming at each r value, calculating the average value of the full width at half maximum value of the corresponding area of the corresponding overlapping area in the photoluminescence full width at half maximum two-dimensional map, thereby obtaining a variation relation curve of the average value along with the r value; carrying out normalization processing on the change relation curve to obtain a normalized change relation curve; extracting an average value of full width values of half peaks corresponding to flat parts in the normalized variation relation curve, taking the average value as a standard value, and determining a r value corresponding to a position where a numerical value on the normalized variation relation curve is equal to the standard value m as a boundary radius, wherein 1< m < 1.05; and taking the circle center of the supporting plate as the circle center, taking the intersection curve of the circular graph with the boundary radius as the radius and the high electron mobility device epitaxial wafer at the growth position as a boundary, and taking the boundary radius as a boundary distance L. In this embodiment, by using the normalized FWHM average value in the overlapping area as the calculation target instead of the normalized FWHM average value in the aforementioned reference direction, the error introduced into the calculation result by the measurement random error is reduced, and the determination accuracy of the boundary distance L is improved.
Optionally, the preset step = (Rmax-Rmin)/N, where N is a positive integer, and N ≧ 10. Optionally, the plurality of different heating power ratios T are obtained by means of numerical fittingrAnd the corresponding relation between the plurality of demarcation distances comprises the following steps: obtaining the different heating power ratios T by a least square method in a polynomial fitting moderAnd a correspondence between the plurality of division distances. Optionally, based on the dividing distance L and the preset heating power ratio Tr0And determining a new heating power ratio adopted for next molecular beam epitaxial growth of the high electron mobility device according to a corresponding relation between the heating power ratio and the boundary distance, which is obtained in advance, and the new heating power ratio comprises the following steps: calculating the distance Lm between the point on the epitaxial wafer of the high electron mobility device, which is farthest from the center of the supporting plate, and the center of the supporting plate; according to the corresponding relation between the heating power ratio and the boundary distance which are obtained in advance, respectively determining a heating power ratio T1 corresponding to the boundary distance L and a heating power ratio T2 corresponding to the distance Lm; based on the heating power ratio T1, the heating power ratio T2 and the preset heating power ratio Tr0And calculating and determining a new heating power ratio Tn adopted in the next molecular beam epitaxial growth of the high electron mobility device.
Optionally, based on the heating power ratio T1, the heating power ratio T2 and the preset heating power ratio Tr0Calculating to determine next high powerThe new heating power ratio Tn adopted in the molecular beam epitaxy growth of the mobility device comprises: calculating a new heating power ratio Tn used for next molecular beam epitaxy growth of the high electron mobility device according to the following formula: tn = a T2/T1Tr0Wherein a is a preset constant coefficient, and a>0. Generally, it is preferable that a = 1.
The above embodiments are merely illustrative of the technical concept and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the content of the present invention and implement the present invention, and not to limit the scope of the present invention, and all equivalent changes or modifications made according to the spirit of the present invention should be covered in the scope of the present invention.

Claims (8)

1. The method for optimizing the epitaxial growth process parameters of the high electron mobility device is characterized by being used for optimizing and adjusting the epitaxial growth process parameters of an epitaxial wafer of the high electron mobility device prepared by molecular beam epitaxy equipment, wherein a supporting plate used for bearing a substrate in the molecular beam epitaxy equipment is a circular supporting plate, the distance between the center of the substrate on the supporting plate and the circle center of the supporting plate is L, and the L is the distance between the center of the substrate on the supporting plate and the circle center of the supporting plate>0, a heating assembly used for heating the substrate carried on the supporting plate in the molecular beam epitaxy device comprises an inner ring electric heating coil and an outer ring electric heating coil which are annularly arranged; in the process of molecular beam epitaxial growth of the high electron mobility device on the substrate, the ratio of the heating power of the outer ring electric heating coil to the heating power of the inner ring electric heating coil is set to be Tr；
The method comprises the following steps:
using the molecular beam epitaxy apparatus, at the heating power ratio TrEqual to the preset heating power ratio Tr0Performing molecular beam epitaxial growth of the high electron mobility device on the substrate on the supporting plate under the condition to obtain a high electron mobility device epitaxial wafer;
performing photoluminescence spectrum measurement on a channel layer of the high electron mobility device epitaxial wafer to obtain a peak wavelength in a photoluminescence spectrum, and measuring a photoluminescence full width at half maximum two-dimensional map across the whole epitaxial wafer surface for the peak wavelength, wherein the photoluminescence full width at half maximum two-dimensional map is used for representing the full width at half maximum distribution condition of photoluminescence tests on each position on the whole epitaxial wafer for the peak wavelength;
identifying a boundary in the photoluminescence full-width-half-maximum two-dimensional map, and calculating a dividing distance L of the boundary, the boundary being a full-width-half-maximum value boundary determined based on a change in a full-width-half-maximum value in the photoluminescence full-width-half-maximum two-dimensional map, the dividing distance L being used to indicate a distance of the boundary from a center of the pallet assuming that the hemt epitaxial wafer is in a growth position indicating a placement position of the hemt epitaxial wafer when molecular beam epitaxial growth is performed on the pallet;
based on the boundary distance L and the preset heating power ratio Tr0And determining a new heating power ratio used for next molecular beam epitaxial growth of the high electron mobility device according to a corresponding relationship between the heating power ratio and the boundary distance obtained in advance,
the correspondence between the heating power ratio and the dividing distance is obtained as follows:
for a plurality of different heating power ratios TrRespectively carrying out molecular beam epitaxial growth on the high electron mobility devices to obtain a plurality of high electron mobility device epitaxial wafers;
measuring a photoluminescence full-width-at-half-maximum two-dimensional map across the entire epitaxial wafer surface for the channel layer of each of the plurality of high electron mobility device epitaxial wafers, respectively, to obtain a plurality of photoluminescence full-width-at-half-maximum two-dimensional maps;
identifying a dividing line in each of the plurality of photoluminescence full-width-half-maximum two-dimensional maps to obtain a plurality of dividing lines, and calculating a dividing distance for each of the plurality of dividing lines to obtain a plurality of dividing distances;
by means of a numerical fit, the data is,obtaining the plurality of different heating power ratios TrA correspondence relationship with the plurality of division distances,
based on the boundary distance L and the preset heating power ratio Tr0And determining a new heating power ratio adopted for next molecular beam epitaxial growth of the high electron mobility device according to a corresponding relation between the heating power ratio and the boundary distance, which is obtained in advance, and the new heating power ratio comprises the following steps:
calculating the distance Lm between the point on the high electron mobility device epitaxial wafer farthest from the center of the supporting plate and the center of the supporting plate;
according to the corresponding relation between the heating power ratio and the boundary distance which are obtained in advance, respectively determining the heating power ratio T1 corresponding to the boundary distance L and the heating power ratio T2 corresponding to the distance Lm;
based on the heating power ratio T1, the heating power ratio T2 and the preset heating power ratio Tr0Calculating and determining a new heating power ratio Tn adopted in the next molecular beam epitaxial growth of the high electron mobility device,
the heating power ratio T1, the heating power ratio T2 and the preset heating power ratio Tr0Calculating and determining a new heating power ratio Tn adopted in the next molecular beam epitaxial growth of the high electron mobility device, wherein the new heating power ratio Tn comprises the following steps:
calculating a new heating power ratio Tn used for next molecular beam epitaxy growth of the high electron mobility device according to the following formula:
Tn=a*T2/T1*Tr0wherein a is a preset constant coefficient, and a>0。
2. The method of claim 1, wherein the substrate is one of the following substrates: 2 inches, 3 inches, 4 inches, 6 inches.
3. The method of claim 2, wherein a plurality of substrates of the same size are arranged on the carrier in a ring around the center of the carrier.
4. The method for optimizing parameters of an epitaxial growth process of a high electron mobility device according to claim 1, wherein the identifying a boundary in the photoluminescence full-width-half-maximum two-dimensional map and calculating a boundary distance L of the boundary comprises:
assuming that the high electron mobility device epitaxial wafer is at a growth position, taking a linear direction in which the center of the high electron mobility device epitaxial wafer and the circle center of the supporting plate are located as a reference direction;
extracting a reference full width half maximum curve from the photoluminescence full width half maximum two-dimensional map, the reference full width half maximum curve being a curve consisting of all full width half maximum values in the photoluminescence full width half maximum two-dimensional map along the reference direction;
carrying out normalization processing on the reference full width at half maximum curve to obtain a normalized reference full width at half maximum curve;
extracting an average value of full width at half maximum values corresponding to a flat part in the normalized reference full width at half maximum curve, and determining a position in the photoluminescence full width at half maximum two-dimensional map corresponding to a value on the normalized reference full width at half maximum curve equal to the standard value x h as a standard point, wherein 1< h <1.1, with the average value as a standard value;
assuming that the high electron mobility device epitaxial wafer is at a growth position, taking a curve which takes the center of the supporting plate as the center and passes through the standard point and the intersection of the circular pattern and the high electron mobility device epitaxial wafer as a boundary, calculating the distance between the boundary and the center of the supporting plate, and determining the distance as a boundary distance L.
5. The method for optimizing parameters of an epitaxial growth process of a high electron mobility device according to claim 1, wherein the identifying a boundary in the photoluminescence full-width-half-maximum two-dimensional map and calculating a boundary distance L of the boundary comprises:
determining a circular area on the supporting plate by taking the circle center of the supporting plate as a circle center and r as a radius, so as to obtain an overlapping area between the circular area and the high electron mobility device epitaxial wafer at the growth position, wherein Rmin < r is less than or equal to Rmax, Rmin is equal to the distance between the point of the high electron mobility device epitaxial wafer at the growth position, which is the closest distance to the circle center of the supporting plate, and the center of the supporting plate, and Rmax is equal to the distance between the point of the high electron mobility device epitaxial wafer at the growth position, which is the farthest distance to the circle center of the supporting plate, and the circle center of the supporting plate;
r is gradually increased from small to large by a preset step length, and a corresponding overlapping area is determined respectively for each r value;
for each r value, calculating the average value of the full width at half maximum values of the corresponding areas of the corresponding overlapped areas in the photoluminescence full width at half maximum two-dimensional map, thereby obtaining a variation relation curve of the average value along with the r value;
carrying out normalization processing on the change relation curve to obtain a normalized change relation curve;
extracting an average value of full width at half maximum values corresponding to a flat part in the normalized variation relation curve, taking the average value as a standard value, and determining a r value corresponding to a position on the normalized variation relation curve, wherein the value is equal to the standard value m, as a boundary radius, wherein 1< m < 1.05;
and taking a curve which is formed by intersecting the circular graph taking the circle center of the supporting plate as the circle center and taking the boundary radius as the radius and the high electron mobility device epitaxial wafer at the growth position as a boundary, and taking the boundary radius as a boundary distance L.
6. The method for optimizing parameters of epitaxial growth process for high electron mobility devices according to claim 5, wherein said predetermined step size = (Rmax-Rmin)/N, where N is a positive integer, and N ≧ 10.
7. The chair of claim 1The method for optimizing the epitaxial growth process parameters of the electron mobility device is characterized in that the plurality of different heating power ratios T are obtained in a numerical fitting moderAnd the corresponding relation between the plurality of demarcation distances comprises the following steps: obtaining the different heating power ratios T by a least square method in a polynomial fitting moderAnd a correspondence between the plurality of division distances.
8. The method for optimizing the parameters of the epitaxial growth process of the high electron mobility device according to claim 1, wherein a = 1.
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