CN115831810A - Unit for supplying liquid, apparatus and method for treating substrate using the same - Google Patents

Unit for supplying liquid, apparatus and method for treating substrate using the same Download PDF

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Publication number
CN115831810A
CN115831810A CN202211137941.0A CN202211137941A CN115831810A CN 115831810 A CN115831810 A CN 115831810A CN 202211137941 A CN202211137941 A CN 202211137941A CN 115831810 A CN115831810 A CN 115831810A
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CN
China
Prior art keywords
state
buffer space
liquid
substrate
treatment liquid
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Pending
Application number
CN202211137941.0A
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Chinese (zh)
Inventor
崔气勋
韩泳遵
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Semes Co Ltd
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Semes Co Ltd
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Publication of CN115831810A publication Critical patent/CN115831810A/en
Pending legal-status Critical Current

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02Cleaning by the force of jets or sprays
    • B08B3/022Cleaning travelling work
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02Cleaning by the force of jets or sprays
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00Accessories or details of general applicability for machines or apparatus for cleaning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742Mechanical parts of transfer devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766Mechanical parts of transfer devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/007Heating the liquid

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The present inventive concept provides a substrate processing apparatus. The substrate processing apparatus includes: a processing container having a processing space; a support unit configured to support a substrate at a processing space; a liquid supply unit for supplying a treatment liquid to the substrate supported by the support unit, and wherein the liquid supply unit includes: a nozzle member for discharging a treatment liquid; and a driving member for moving the nozzle member to the standby position and the process position, wherein the nozzle member comprises: a main body having a buffer space therein and a discharge port configured to discharge a treatment liquid; and a rotation member for changing the main body between a first state and a second state by rotation, and wherein the first state is a state in which the process liquid injected into the buffer space is held so that the process liquid does not flow to the discharge port, and the second state is a state in which the process liquid injected into the buffer space is discharged to the outside of the main body through the discharge port.

Description

Unit for supplying liquid, apparatus and method for treating substrate using the same
Technical Field
Embodiments of the inventive concepts described herein relate to a liquid supply unit and a substrate processing apparatus and method having the same, and more particularly, to a substrate processing apparatus and method for processing a substrate by supplying a liquid, and a liquid supply unit used therein.
Background
In a semiconductor manufacturing process, various processes such as a photolithography process, an etching process, an ashing process, a thin film deposition process, and a cleaning process are performed. A cleaning process for removing various contaminants generated while each process is performed before or after each process. Generally, in the cleaning process, contaminants remaining on the substrate are removed on the substrate by using chemicals (solutions) such as chemicals or rinsing liquids.
In the cleaning process using chemicals, chemicals heated to a preset temperature or higher are used. In one embodiment, if a phosphoric acid (P) is used, for example 2 O 5 ) The chemical of (3), then a chemical heated to 200 ℃ or higher is required. The apparatus for supplying a liquid onto a substrate includes a resin member such as a filter. Further, the configuration of the liquid supply apparatus, which may include a pump and a valve, has a limitation in heat resistance. Therefore, if the chemicals are heated in the liquid supply device and supplied onto the substrate, the heated chemicals may flow inside resin parts such as a filter, a pump having weak heat resistance, and a valve provided in the liquid supply device, thereby causing damage.
In addition, the support unit supporting the substrate may be heated to indirectly heat the bottom of the substrate to heat the chemicals supplied onto the substrate. However, this method is an indirect method in which the chemicals are not discharged onto the substrate in a high temperature state, but are discharged onto the substrate and then heated, thereby degrading process performance. In addition, this method has a problem in that the amount of chemicals supplied to the substrate increases.
Disclosure of Invention
Embodiments of the inventive concept provide a liquid supply unit for efficiently supplying a process liquid onto a substrate, and a substrate processing apparatus and a substrate processing method having the same.
Embodiments of the inventive concept provide a liquid supply unit to raise a temperature of a processing liquid to a target temperature and supply the processing liquid onto a substrate, and a substrate processing apparatus and a substrate processing method having the same.
Embodiments of the inventive concept provide a liquid supply unit for effectively controlling a temperature of a processing liquid, and a substrate processing apparatus and a substrate processing method having the same.
Embodiments of the inventive concept provide a liquid supply unit for effectively removing a vapor pressure generated in a process of raising a temperature of a processing liquid to a target temperature, and a substrate processing apparatus and a substrate processing method having the same.
Technical objects of the inventive concept are not limited to those described above, and other technical objects not mentioned will become apparent to those skilled in the art from the following description.
The present inventive concept provides a substrate processing apparatus. The substrate processing apparatus includes: a processing container having a processing space; a support unit configured to support a substrate at a processing space; a liquid supply unit for supplying a treatment liquid to the substrate supported by the support unit, and wherein the liquid supply unit includes: a nozzle member for discharging a treatment liquid; and a driving member for moving the nozzle member to a standby position and a process position, wherein the nozzle member includes: a body having a buffer space therein and a discharge port configured to discharge a treatment liquid; and a rotation member for changing the main body between a first state and a second state by rotation, and wherein the first state is a state of holding the process liquid injected into the buffer space so that the process liquid does not flow to the discharge port, and the second state is a state of discharging the process liquid injected into the buffer space to the outside of the main body through the discharge port.
In one embodiment, the bottom surface of the buffer space comprises an inclined portion that is inclined downwardly towards the ground in a direction away from the discharge port.
In one embodiment, the bottom surface of the buffer space further includes a horizontal portion extending in a horizontal direction with respect to the ground from a top end of the inclined portion.
In one embodiment, the nozzle member further comprises: a heating member for heating the treatment liquid injected into the buffer space; and an exhaust member for exhausting an atmosphere of the buffer space.
In one embodiment, the liquid supply unit includes: a supply pipe for supplying the treatment liquid to the buffer space; and a supply valve for opening and closing the supply pipe.
In one embodiment, the body is provided in a material that is more heat resistant than the supply valve.
In one embodiment, the substrate processing apparatus further includes a controller for controlling the liquid supply unit, and wherein the controller controls the rotating member to rotate the body such that an inclination of the body is changed between the first state and the second state.
In one embodiment, the bottom surface of the buffer space is arranged to be inclined with respect to the ground in the first state.
In one embodiment, the bottom surface of the buffer space is arranged to be less inclined or parallel to the ground in the second state than in the first state.
In one embodiment, the processing liquid injected into the buffer space is supplied as a single discharge amount onto the substrate supported by the support unit.
The present inventive concept provides a liquid supply unit for supplying a process liquid onto a substrate. The liquid supply unit includes a nozzle member for discharging the treatment liquid; and a driving member for moving the nozzle member to a standby position and a process position, wherein the nozzle member includes: a main body having a buffer space therein and a discharge port configured to discharge the treatment liquid; and a rotation member for changing the main body between a first state and a second state by rotation, and wherein the first state is a state in which the process liquid injected into the buffer space is held so that the process liquid does not flow out from the discharge port, and the second state is a state in which the process liquid injected into the buffer space is discharged to the outside of the main body through the discharge port.
In one embodiment, the bottom surface of the buffer space includes: an inclined portion inclined downward toward the ground in a direction away from the discharge port; a horizontal portion extending in a horizontal direction with respect to the ground from a top end of the inclined portion, and wherein the discharge port is provided at the horizontal portion.
In one embodiment, the nozzle member further comprises: a heating member configured to heat the treatment liquid injected into the buffer space; and a gas discharge member for discharging an atmosphere of the buffer space.
In one embodiment, the liquid supply unit further comprises a supply pipe for supplying the treatment liquid to the buffer space; and a supply valve for opening and closing the supply pipe.
In one embodiment, the body is provided in a material that is more heat resistant than the supply valve.
In one embodiment, the bottom surface of the buffering space is arranged to be inclined to the ground in the first state, and the bottom surface of the buffering space is arranged to be inclined less than the inclination of the first state or to be parallel to the ground in the second state.
The present inventive concept provides a substrate processing method. The substrate processing method includes: the method includes supplying a process liquid to a buffer space within a body, and making the process liquid in the buffer space stand-by in a state where a body of a nozzle member is in a first state, changing a position of the body to a second state, and discharging the process liquid in the buffer space through a discharge port provided at the body, wherein the first state is a state where the process liquid injected into the buffer space is kept from flowing to the discharge port, and the second state is a state where the process liquid injected into the buffer space is discharged to the outside of the body through the discharge port.
In one embodiment, the nozzle member is located at a standby position before the substrate is loaded on the support unit, and the nozzle member is moved from the standby position to a process position where the treatment liquid is supplied to the buffer space if the substrate is loaded on the support unit.
In one embodiment, the amount of the process liquid supplied to the buffer space is a single discharge amount discharged onto the substrate.
According to embodiments of the inventive concept, a process liquid can be efficiently supplied onto a substrate.
According to an embodiment of the inventive concept, the temperature of the processing liquid may be increased to a target temperature and the processing liquid may be supplied onto the substrate.
According to embodiments of the inventive concept, the temperature of the treatment liquid can be effectively controlled.
According to the embodiments of the inventive concept, the vapor pressure generated in the process of raising the temperature of the treatment liquid to the target temperature can be effectively removed.
Effects of the inventive concept are not limited to the above-described effects, and other effects not mentioned will become apparent to those skilled in the art from the following description.
Drawings
The above and other objects and features will become apparent from the following description with reference to the accompanying drawings in which like reference numerals refer to like parts throughout the various views unless otherwise specified, and in which:
fig. 1 schematically illustrates an embodiment of a substrate processing apparatus of the inventive concept.
Fig. 2 schematically illustrates the process chamber of fig. 1.
Figure 3 schematically shows the nozzle member of figure 2.
Fig. 4 schematically shows a state where the treatment liquid is supplied to the buffer space of fig. 3.
Fig. 5 schematically shows a state where the treatment liquid is heated in the buffer space of fig. 3.
Fig. 6 schematically shows a state where the process liquid is discharged from the buffer space of fig. 3 onto the substrate.
Fig. 7 schematically shows another embodiment of the liquid supply unit of fig. 2.
Fig. 8 schematically shows another embodiment of the liquid supply unit of fig. 2.
Detailed Description
The inventive concept is susceptible to various modifications and alternative forms, and specific embodiments thereof have been shown by way of example in the drawings and are herein described in detail. However, the embodiments according to the inventive concept are not intended to limit the specifically disclosed forms, and it should be understood that the inventive concept includes all modifications, equivalents, and alternatives falling within the spirit and technical scope of the present invention. The examples are provided to more fully explain the inventive concept to those having ordinary skill in the art. Accordingly, the form of the components in the drawings have been exaggerated to emphasize clearer descriptions.
It will be understood that when an element or layer is referred to as being "on," "connected to," "coupled to," or "overlying" another element or layer, it can be directly on, connected to, coupled to, or overlying the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly connected to" or "directly coupled to" another element or layer, there are no intervening elements or layers present. Like numbers refer to like elements throughout. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Spatially relative terms (e.g., "under," "below," "lower," "over," "upper," etc.) may be used herein for ease of description to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the term "below" may include both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or oriented in other directions) and the spatially relative descriptors used herein interpreted accordingly.
In the embodiments, a process of liquid-treating a substrate by supplying a liquid such as a cleaning liquid onto the substrate will be described as an example. However, the embodiment is not limited to the cleaning process, and may be applied to various processes of treating the substrate using the treatment liquid, such as an etching process, an ashing process, a developing process, and the like.
Hereinafter, embodiments of the inventive concept will be described in detail with reference to fig. 1 to 8.
Fig. 1 schematically illustrates an embodiment of a substrate processing apparatus. Referring to fig. 1, a substrate processing apparatus 1 includes an index module 10 and a process module 20. According to an embodiment, the indexing module 10 and the processing module 20 are arranged in one direction. Hereinafter, the direction in which the index module 10 and the process module 20 are disposed is referred to as a first direction 2, the direction perpendicular to the first direction 2 in a plan view is referred to as a second direction 4, and the direction perpendicular to a plane including both the first direction 2 and the second direction 4 is referred to as a third direction 6.
The index module 10 transfers the substrates W from the container 100, in which the substrates W are stored, to the process module 20, which processes the substrates W. The index module 10 receives the substrate W that has been processed at the processing module 20 and stores the substrate W in the container F. The longitudinal direction of the indexing module 10 is arranged in the second direction 4. The index module 10 has a load port 110 and an index frame 120.
A container F storing substrates W is mounted on the load port 110. Load ports 110 are disposed on opposite sides of the index frame 120. The load port 110 may be provided in plurality, and the plurality of load ports 110 may be arranged in a direction along the second direction 4. The number of load ports 110 may be increased or decreased depending on the processing efficiency and footprint conditions of the process modules 20.
A plurality of slots (not shown) are formed at the container F to store the substrate W in a state where the substrate W is horizontally arranged with respect to the floor surface. As the container F, a sealed container such as a Front Opening Unified Pod (FOUP) can be used. The containers F may be placed on the load port 110 by a conveying device (not shown) such as an overhead conveyor, or a robotic guided vehicle, or by an operator.
An index rail 192 and an index robot 194 are provided in the index frame 120. The index rail 192 is disposed with its longitudinal direction along the second direction 4 within the index frame 120. The index robot 194 may transfer the substrate W. The index robot 194 may transfer the substrate W between the index module 10 and the buffer unit 220.
The indexing robot 194 may include an indexing hand 1940. A substrate W may be placed on the index hand 1940. The index hand 1940 may include an index base 1942 having an index base 1942 in the form of a circular ring in which a portion of the circumference is symmetrically cut, and a supporting unit 1944 for moving the index base 1942. The configuration of the index hand 1940 is the same as or similar to that of a transfer hand described later. The index hand 1940 may be disposed to be movable in the second direction 4 along the index track 192. Thus, the indexing hand 1940 can move forward and backward along the indexing track 192. Further, the indexing hand 1940 may be provided to be rotatable about the third direction 6 as an axis and movable in the third direction 6.
The controller 30 may control the substrate processing apparatus. The controller 30 may include a process controller including a microprocessor (computer) performing control of the substrate processing apparatus, a user interface such as a keyboard through which an operator inputs commands to manage the substrate processing apparatus, a display displaying an operation condition of the substrate processing apparatus, and a storage unit storing a processing scheme, i.e., a control program performing a processing process of the substrate processing apparatus by controlling the process controller or a program performing components of the substrate processing apparatus according to data and processing conditions. In addition, a user interface and memory unit may be connected to the process controller. The processing scheme may be stored in a storage medium of the storage unit, which may be a hard disk, a portable magnetic disk (such as a CD-ROM or DVD), or a semiconductor memory (such as a flash memory).
The controller 30 may control the substrate processing apparatus 1 so that it may perform a substrate processing method that will be explained below. For example, the controller 30 may control components provided to the process chamber 260 so that a substrate processing method to be explained below may be performed.
The process module 20 includes a buffer unit 220, a transfer chamber 240, and a process chamber 260. The buffer unit 220 provides a space in which the substrate W put into the process module 20 and the substrate W taken out of the process module 20 temporarily remain. The transfer chamber 240 provides a space for transferring the substrate W between the buffer unit 220 and the process chambers 260 and between the process chambers 260. The process chamber 260 may perform a liquid treatment process for treating the substrate W by supplying liquid onto the substrate W. For example, the liquid treatment process may be a cleaning process of cleaning the substrate with a cleaning liquid. The chemical treatment, the rinsing treatment, and the drying treatment may be performed on the substrate in the process chamber. Alternatively, a process chamber for drying the substrate may be provided separately from a process chamber for performing liquid treatment.
The buffer unit 220 may be disposed between the index frame 120 and the transfer chamber 240. The buffer unit 220 may be disposed at one end of the transfer chamber 240. A groove (not shown) on which the substrate W is placed is provided in the buffer unit 220. A plurality of grooves (not shown) are provided spaced apart from each other in the third direction 6. The front and rear surfaces of the buffer unit 220 are opened. The front face is the surface facing the indexing module 10 and the back face is the surface facing the transfer chamber 240. The index robot 194 may access the buffer unit 220 through the front side, and the transfer robot 244 may access the buffer unit 220 through the rear side, which will be described later.
The longitudinal direction of the transfer chamber 240 may be disposed in the first direction 2. Each process chamber 260 may be disposed at both sides of the transfer chamber 240. The process chamber 260 may be disposed at one side of the transfer chamber 240. The process chamber 260 and the transfer chamber 240 may be disposed along the second direction 4. According to an embodiment, the process chambers 260 may be disposed at both sides of the transfer chamber 240, and the process chambers 260 may be disposed in an arrangement of AXB (a and B are natural numbers greater than 1 or 1) in the first direction 2 and the third direction 6, respectively. Here, a is the number of the process chambers 260 arranged in a row in the first direction 2, and B is the number of the process chambers 260 arranged in a row in the third direction 6. When four or six process chambers 260 are provided at one side of the transfer chamber 240, the process chambers 260 may be arranged in a 2 × 2 or 3 × 2 arrangement. The number of process chambers 260 may be increased or decreased. Unlike the above, the process chamber 260 may be disposed only at one side of the transfer chamber 240. In addition, the process chambers 260 may be disposed as a single layer on one side and both sides of the transfer chamber 240.
The transfer chamber 240 includes a guide rail 242 and a transfer robot 244. The guide rail 242 is disposed with its longitudinal direction along the first direction 2 within the transfer chamber 240. The transfer robot 244 may be provided to be linearly movable along the first direction 2 on the guide rail 242. The transfer robot 244 transfers the substrate W between the buffer unit 220 and the process chambers 260 and between the process chambers 260.
The transfer robot 2440 includes a base 2442, a main body 2444, and an arm 2446. The base 2442 is mounted to be movable in the first direction 2 along the guide rail 242. The body 2444 is coupled to the base 2442. The main body 2444 is provided to be movable on the base 2442 in the third direction 6. In addition, the main body 2444 is provided to be rotatable on the base 2442. The arm 2446 is coupled to a main body 2444, the main body 2444 being provided to be movable forward and backward with respect to the main body 2444. The arms 2446 are provided in plurality to be individually driven, respectively. The arms 2446 are arranged one above the other and spaced apart from each other in the third direction 6.
The process chamber 260 performs a liquid treatment process on the substrate W. For example, the process chamber 260 may be a chamber that performs a cleaning process by supplying a cleaning liquid to the substrate W. Unlike this, the process chamber 260 may be a chamber that performs a wet etching process of removing a thin film on a substrate by supplying liquid plasma. The process chamber 260 may have a different structure depending on the type of process for processing the substrate W. Alternatively, each process chamber 260 may have the same structure. Alternatively, the process chambers 260 may be divided into a plurality of groups, and the process chambers 260 belonging to one group may be the process chambers 260 performing any one of the cleaning process and the wet etching process, and the process chambers 260 belonging to the other group may be the process chambers 260 performing the other one of the cleaning process and the wet etching process.
In the following embodiments of the inventive concept, a case of a liquid treatment process of treating the substrate W by supplying liquid onto the substrate W from the process chamber 260 will be described as an example.
Figure 2 schematically illustrates an embodiment of the process chamber of figure 1. Referring to fig. 2, the process chamber 260 includes a housing 2610, a processing container 2620, a support unit 2630, and a liquid supply unit 3000.
The housing 2610 has a space therein. The housing 2610 generally has a rectangular parallelepiped form. The processing container 2620, the supporting unit 2630, and the liquid supply unit 3000 are disposed within the housing 2610.
The processing container 2620 has a processing space with a top opening. The substrate W is liquid-processed in the processing space. The support unit 2630 supports the substrate W in the processing space and rotates the substrate W. The liquid supply unit 3000 supplies liquid onto the substrate W supported by the support unit 2630. The liquid may be provided in various types and may be sequentially supplied onto the substrate W.
According to one embodiment, the processing container 2620 has a guide wall 2621 and a plurality of recovery containers 2623, 2625, and 2627. Each of the recovery containers 2623, 2625, and 2627 separates and recovers a different liquid from the liquid used for the substrate process. Each of the recovery containers 2623, 2625, and 2627 has a recovery space for recovering liquid used for substrate processing. The guide wall 2621 and each of the recovery containers 2623, 2625 and 2627 are arranged in a circular ring pattern around the support unit 2630. When the liquid treatment process is performed, the liquid dispersed by the rotation of the substrate W is introduced into the recovery spaces of the recovery containers 2623, 2625, and 2627 through inlets 2623a, 2625a, and 2627a, which will be described later, respectively. Different types of treatment liquid may flow into each recovery vessel.
According to one embodiment, the processing container 2620 has a guide wall 2621, a first recovery container 2623, a second recovery container 2625, and a third recovery container 2627. Guide wall 2621 is provided in the form of a ring surrounding support unit 2630, and first recovery tank 2623 is provided in the form of a ring surrounding guide wall 2621. The second recovery tank 2625 is disposed in the form of a ring surrounding the first recovery tank 2623, and the third recovery tank 2627 is disposed in the form of a ring surrounding the second recovery tank 2625. The space between the first recovery tank 2623 and the guide wall 2621 serves as a first inlet 2623a through which liquid is introduced. A space between the first recovery tank 2623 and the second recovery tank 2625 serves as a second inlet 2625a through which liquid is introduced. A space between the second recovery tank 2625 and the third recovery tank 2627 serves as a third inlet 2627a through which liquid is introduced. The second inlet 2625a is positioned above the first inlet 2623a, and the third inlet 2627a may be positioned above the second inlet 2625a.
The space between the bottom end of the guide wall 2621 and the first recovery tank 2623 serves as a first outlet 2623b through which the fumes and gas flow generated from the liquid are discharged. A space between the bottom end of the first recovery tank 2623 and the second recovery tank 2625 serves as a second outlet 2625b, and fumes and gas flow generated from the liquid are discharged through the second outlet 2625 b. The space between the bottom end of the second recovery tank 2625 and the third recovery tank 2627 serves as a third outlet 2627b through which the flue gas and the gas stream generated from the liquid are discharged. The smoke and the gas flow discharged from the first, second, and third outlets 2623b, 2625b, and 2627b are discharged through a later-described gas discharge unit 2650.
The supporting unit 2630 has a rotary chuck 2631, a supporting pin 2633, chuck pins 2635, a rotating shaft 2637, and a first driver 2639. The spin chuck 2631 has a top surface that is generally circular in form when viewed from above. The diameter of the top surface of the spin chuck 2631 may be greater than the diameter of the substrate W.
The support pin 2633 may be provided in plurality. Support pins 2633 are provided at edge portions of the top surface of the spin chuck 2631 to be spaced apart from each other at predetermined intervals to define circular rings, and protrude upward from the spin chuck 2631. The support pins 2633 support the edge of the rear surface of the substrate W such that the substrate W is spaced apart from the top surface of the spin chuck 2631 by a predetermined distance.
The chuck pin 2635 may be provided in plurality. The chuck pins 2635 are disposed farther from the center of the spin chuck 2631 than the support pins 2633. The chuck pins 2635 protrude from a top surface of the spin chuck 2631. The chuck pins 2635 support side portions of the substrate W such that the substrate W is not laterally displaced or swung when the substrate W rotates. The chuck pins 2635 can move between standby positions and support positions in a radial direction of the rotation chuck 2631. The standby position is a position distant from the center of the spin chuck 2631 as compared to the support position. The chuck pins 2635 are located at standby positions when the substrate W is loaded or unloaded on the support unit 2630, and the chuck pins 2635 are located at support positions to support the substrate W and prevent lateral displacement or rocking of the substrate W when a process is performed on the substrate W. In the support position, the chuck pins 2635 contact the side of the substrate W.
The rotation shaft 2637 is coupled to the rotation chuck 2631. The rotation shaft 2637 may be coupled to a bottom surface of the rotation chuck 2631. The rotating shaft 2637 is provided to be rotatable by receiving power from the first driver 2639. The first driver 2639 rotates the rotation shaft 2637, thereby rotating the rotation chuck 2631. The first driver 2639 may change a rotation speed of the rotation shaft 2637. The first driver 2639 may be a motor providing a driving force. However, the inventive concept is not limited thereto, and various modifications may be made as a known means of providing a driving force.
The exhaust line 2650 exhausts fumes and gases generated at the processing space. The exhaust line 2650 exhausts fumes and gases generated while the substrate W is liquid-processed. The vent line 2650 may be coupled to a bottom surface of the process vessel 2620. In one embodiment, the vent line 2650 may be positioned between the rotating shaft 2637 of the support unit 2630 and the inner wall of the process container 2620. A pressure reduction unit (not shown) is disposed at the exhaust line 2650. Fumes and gases generated during liquid processing of the substrate W are discharged from the processing space to the outside of the processing space through the decompression unit.
The air flow supply unit 2660 supplies air flow to the inner space of the housing 2610. The air flow supply unit 2660 may supply a downward air flow to the inner space. The air flow supply unit 2660 may be installed at the housing 2610. The gas flow supply unit 2660 may be installed above the processing container 2620 and the support unit 2630. The gas supplied to the inner space of the housing 2610 by the gas flow supply unit 2660 forms a downward gas flow in the inner space. Gaseous byproducts generated by the processing within the processing volume are exhausted from the downward flow of gas through an exhaust line 2650 to the exterior of the housing 2610. The air flow supply unit 2660 may be provided as a fan filter unit.
The liquid supply unit 3000 supplies liquid onto the substrate W supported by the support unit 2630. A plurality of liquid supply units 3000 may be provided. Each of the plurality of liquid supply units 3000 may supply liquid to the liquid supply unitDifferent types of liquids are supplied onto the substrate W. According to an embodiment, each of the liquid supply units 3000 may supply a first treatment liquid and a second treatment liquid, respectively. In one embodiment, the first and second treatment liquids may be any one of chemicals, rinsing liquids, and organic solvents. For example, the chemical may include dilute sulfuric acid peroxide (H) 2 SO 4 ) Phosphoric acid (P) 2 O 5 ) Hydrofluoric acid (HF) and ammonium hydroxide (NH) 4 OH). For example, the rinsing liquid may include water or deionized water (DIW). For example, the organic solvent may include an alcohol, such as isopropyl alcohol (IPA). Hereinafter, a case where the liquid supply portion 3000 supplies phosphoric acid onto the substrate W will be described as an example. Hereinafter, the phosphoric acid supplied onto the substrate W is referred to as a processing liquid.
Figure 3 schematically shows the nozzle member of figure 2. Referring to fig. 2 and 3, the liquid supply unit 3000 may include a nozzle member 3001, a driving member 3002, and a supply member (not shown). The nozzle member 3001 discharges the process liquid onto the substrate W. The nozzle member 3001 discharges the processing liquid toward the top surface of the substrate W supported by the support unit 2630. Nozzle member 3001 may include a body 3100, a connection pipe 3140, a heating member 3180, an exhaust member 3190, and a rotation member 3200.
The body 3100 may have a buffer space B therein. The body 3100 may be made of a material having heat resistance. Further, the body 3100 may be made of a material having a stronger heat resistance than the filter 3900 described later. In one embodiment, body 3100 can be made of a material including quartz. The processing liquid supplied from a connection pipe 3140 described later may be stored in the buffer space B. The processing liquid stored in the buffer space B may be heated to a set temperature by a heating member 3180 described later. The buffer space B may include a first side surface 3121, a bottom surface 3122, a second side surface 3123, and a top surface 3124.
The first side surface 3121 forming the buffering space B may be formed in a direction perpendicular to the ground. The connection pipe 3140 may be connected to the first side surface 3121. The side wall of the body 3100 facing the first side wall 3121 may be connected to a support arm 3300 described later.
The bottom surface 3122 forming the buffering space B may be in contact with the first side surface 3121. The bottom surface 3122 may be in contact with the second side surface 3123. The bottom surface 3122 may be formed to be generally inclined when viewed from the front. The bottom surface 3122 may include an inclined portion 3122a and a horizontal portion 3122b. One end of the inclined portion 312a may be in contact with the first side surface 3121. The other end of the inclined portion 3122a may contact the horizontal portion 3122b. The inclined portion 3122a may be inclined upward with respect to the ground in a direction away from the first side surface 3121 when viewed from the front. The horizontal portion 3122b may be formed horizontally with respect to the ground. One end of the horizontal portion 3122b may be in contact with the inclined portion 3122 a. The horizontal portion 3122b may extend from the top end of the inclined portion 3122a in a horizontal direction with respect to the ground. A discharge port 3160, which will be described later, may be formed at the horizontal portion 3122b.
The second side surface 3123 forming the buffering space B may be formed in a direction perpendicular to the ground. One end of the second side surface 3123 may be in contact with the discharge port 3160. The other end of the second side surface 3123 may be in contact with the top surface 3124.
The top surface 3124 forming the buffering space B may be formed in a direction horizontal to the ground. One end of the top surface 3124 may be in contact with the second side surface 3123. The other end of the top surface 3124 may be in contact with the first side surface 3121. A vent member 3190, which will be described later, may be connected to the top surface 3124.
The connection pipe 3140 may be connected to the first side surface 3121 forming the buffering space B. The connection pipe 3140 may communicate with a supply member (not shown) through which a process liquid flows, which will be described later. Accordingly, the connection pipe 3140 may supply the treatment liquid to the buffer space B. The connection pipe 3140 may be provided as a pipe having elasticity. In one embodiment, the connection pipe 3140 may be provided as a flexible pipe. Alternatively, the connection pipe 3140 may be provided as a coil pipe. When the body 3100 is rotated by a rotary member 3200 described later, the connection pipe 3140 may be stretched or/and compressed according to a change in position of the body 3100. In the above-described embodiment of the present invention, it is described that the connection pipe 3140 is connected to the first side surface 3121 by way of example, but the inventive concept is not limited thereto. The connection pipe 3140 may be connected to various positions capable of supplying the treatment liquid to the buffer space B.
The discharge port 3160 discharges the process liquid injected into the buffer space B to the substrate W supported on the support unit 2630. A drain port 3160 is formed below the body 3100. In one embodiment, the discharge port 3160 may be formed as an opening. For example, the drain port 3160 may be formed as an opening through a bottom portion of the body 3100. The discharge port 3160 may be formed to penetrate the bottom portion of the body 3100 at the horizontal portion 3122B of the bottom surface 3122 to form the buffering space B. Unlike the above examples, the discharge port 3160 may be formed as an opening penetrating the bottom of the body 3100, and an ejection member communicating with the opening may be further provided. The processing liquid injected into the buffer space B may be discharged onto the substrate from the injection member communicating with the opening.
The heating member 3180 heats the process liquid injected into the buffer space B. The heating member 3180 raises the temperature of the processing liquid injected into the buffer space B to a set temperature. The heating member 3180 heats the body 3100 so that the processing liquid provided in the buffer space B is heated. For example, if the process liquid supplied to the buffer space B is phosphoric acid, the heating member 3180 may heat the process liquid to 200 ℃ or more. Heating member 3180 may be mounted at body 3100. In one embodiment, the heating member 3180 may be installed at a bottom wall of the main body 3100 facing the bottom surface 3122 forming the buffering space B. For example, the heating member 3180 may be embedded at the bottom wall of the main body 3100 facing the inclined portion 3122 a. The heating member 3180 may be provided as a heater. The heater may be provided as a heating resistor to which current is applied. However, the inventive concept is not limited thereto, and the heating member 3180 may be provided as a heater having a heating pattern surrounding the outer surface of the body 3100. In an embodiment, heating members 3180 may be installed at each of the outer surfaces of the body 3100 to heat the body 3100.
The exhaust member 3190 exhausts the atmosphere of the buffer space B. The exhaust part 3190 may exhaust high-temperature steam generated during heating of the process liquid injected into the buffer space B. Exhaust member 3190 may be mounted above body 3100. Exhaust member 3190 may include an exhaust pipe 3192 and a decompression pump 3194. Exhaust 3192 provides a path through which high temperature steam flows. One end of exhaust tube 3192 may be connected to a top portion of body 3100. One end of the exhaust pipe 3192 may be connected to the top surface 3124 forming the buffer space B. The other end of exhaust 3192 may be connected to the top wall of housing 2610. Accordingly, the high-temperature steam flowing through the exhaust pipe 3192 may be discharged to the outside of the housing 2610. However, the inventive concept is not limited thereto, and the other end of the exhaust pipe 3192 may be connected to the exhaust line 2650 and may exhaust fumes generated at the processing space together. Decompression pump 3194 can supply negative pressure to the inside of exhaust pipe 3192. The decompression pump 3194 may be variously modified and provided as a known means for providing negative pressure.
Rotating member 3200 can change the position of body 3100. The rotary member 3200 may change the inclination of the body 3100. Rotary member 3200 may rotate body 3100. The rotary member 3200 may be mounted at an end of a support arm 3300 to be described later. Rotational member 3200 may be connected to body 3100. The rotary member 3200 may be connected to a sidewall of the body 3100. For example, the rotary member 3200 may be connected to a bottom end of a sidewall of the body 3100 facing the first side surface 3121. When viewed from the front, the rotary member 3200 may rotate the body 3100 with a dotted line passing through the support arm 3300 as a central axis. The rotary member 3200 may be provided as a motor. The rotary member 3200 may be variously modified by a known motor providing a driving force.
In the above-described embodiment of the present invention, the rotation member 3200 is provided as a motor to rotate the body 3100, but the inventive concept is not limited thereto. The rotary member 3200 may include a motor and a shaft. The motor may be mounted on the bottom surface of the housing 2610. Both ends of the shaft may be coupled to the inner circumferential surface of the bearing. One end of the shaft may be connected to the motor and the other end of the shaft may be connected to a bearing block connected to a side wall of the body 3100. Accordingly, the rotary member 3200 may be rotated by driving the motor.
Rotary member 3200 may be rotated to change body 3100 between a first state and a second state. The first state is a state in which the processing liquid injected into the buffer space B does not flow to the discharge port 3160. In the first state, the bottom surface 3122 forming the buffering space B may be disposed to be inclined with respect to the ground. In one embodiment, in the first state, the inclined portion 3122a may be disposed to be inclined with respect to the ground. In the second state, the process liquid injected into the buffer space B is discharged to the outside of the body 3100 through the discharge port 3160. In the second state, the bottom surface 3122 forming the buffering space B may be disposed to be smoother than the inclination of the bottom surface 3122 in the first state. In the second state, the inclination of the inclined portion 3122a may be smoother than the inclination of the inclined portion 3122a in the first state. Alternatively, in the second state, the bottom surface 3122 may be disposed parallel to the ground. In the second state, the inclined portion 3122a may be disposed parallel to the ground.
The driving member 3002 may move the nozzle member 3001 to a process position and a standby position. The process position may be a position where the nozzle member 3001 faces the substrate W supported by the support unit 2630. The standby position may be a position where the nozzle member 3001 is away from the process position. Drive member 3002 may include support arm 3300, support shaft 3400, and arm driver 3500.
The support arm 3300 is connected to the top end of the support shaft 3400. The support arm 3300 extends vertically from the support shaft 3400. The nozzle member 3001 may be coupled to the support arm 3300. For example, the rotary member support arm 3200 may be connected to an end of the support arm 3300. Support arm 3300 may support body 3100 via rotational member 3200. The support arm 3300 may be provided to be capable of moving forward and backward in a longitudinal direction thereof. The nozzle member 3001 may swing to coincide with the central axis of the substrate W when viewed from the top.
The support shaft 3400 is located on one side of the processing container 2620. The support shaft 3400 has a rod shape with a longitudinal direction thereof facing the third direction 6. The support shaft 3400 may be rotated by the arm driver 3500. As the support shaft 3400 rotates, the nozzle member 3001 may swing together with the support arm 3300. The nozzle member 3100 is swingably movable to move between a process position and a standby position.
A supply member (not shown) may supply the treatment liquid to the nozzle member 3001. The supply member (not shown) may be a tube. A supply member (not shown) may be connected to the connection pipe 3140. A supply part (not shown) may flow the processing liquid to the connection pipe 3140. A supply component (not shown) is located inside the support arm 3300.
Hereinafter, a substrate processing method according to an embodiment of the inventive concept will be described in detail. The substrate processing methods described below may be performed by the process chamber 260 described above. In addition, the controller 30 may control the components of the process chamber 260 such that the process chamber 260 may perform a substrate processing method described below. For example, the controller 30 may generate a control signal for controlling the liquid supply unit 3000 so that the components of the process chamber 260 may perform the substrate processing method described below.
Fig. 4 schematically shows a state where the treatment liquid is supplied to the buffer space of fig. 3. Referring to fig. 4, before the substrate W is loaded on the supporting unit 2630, the nozzle member 3001 is located at a standby position. The standby position may be a position that does not face the support unit 2630 when viewed from above. When the nozzle member 3001 is in the standby position, a supply member (not shown) supplies the treatment liquid into the buffer space B. If the nozzle member 3001 is in the standby position, a supply member (not shown) supplies the treatment liquid into the buffer space B.
The body 3100 may be in a first state if the nozzle member 3001 is in a standby position. The first state is a state in which the processing liquid injected into the buffer space B does not flow to the discharge port 3160. In the first state, the bottom surface 3122 forming the buffering space B may be disposed to be inclined with respect to the ground. For example, in the first state, the inclined portion 3122a may be disposed to be inclined with respect to the ground. Therefore, even if the treatment liquid is supplied to the buffer space B of the body 3100 in the first state, the treatment liquid does not flow through the discharge port 3160 due to the inclination formed by the inclined portion 3122 a.
The treatment liquid supplied to the buffer space B may be supplied to a point a, which is a limit level at which the treatment liquid does not flow through the discharge port 3160. The amount of the processing liquid supplied to the point a may correspond to a single discharge amount on the substrate W when the substrate W is loaded on the support unit 2630 later.
Fig. 5 schematically shows a state where the treatment liquid is heated at the buffer space of fig. 3. Referring to fig. 5, the processing liquid supplied to the buffer space B is heated to a set temperature. The processing liquid supplied to the buffer space B is heated to a set temperature by the heating member 3180. The nozzle member 3001 is located at the standby position until the processing liquid supplied to the buffer space B is heated to a set temperature. For example, if the treatment liquid supplied to the buffer space B is phosphoric acid, the heating member 3180 may heat the body 3100 until the temperature of the phosphoric acid reaches 200 ℃ or more. High-temperature steam generated in the process of heating the liquid in the buffer space B is exhausted through the exhaust member 319 connected to the top portion of the body 3100. Accordingly, damage to the nozzle member 3001 due to high-temperature vapor pressure during heating can be prevented.
Fig. 6 schematically shows a state where the process liquid is discharged onto the substrate at the buffer space of fig. 3. Referring to fig. 6, the substrate W is loaded on the support unit 2830, and the nozzle member 3001 is moved from the standby position to the process position. If the substrate W is loaded on the support unit 2830, the nozzle member 3001 is rotated by the driving member 3002 to move to a process position facing the substrate W supported on the support unit 2630. The treatment liquid injected into the buffer space B may be heated to a set temperature before the nozzle member 3001 is moved from the standby position to the process position. However, the inventive concept is not limited thereto, and the process liquid injected into the buffer space B may be heated to a set temperature after the nozzle member 3001 is moved to the process position before the process liquid is discharged onto the substrate W.
The nozzle member 3001 moved to the process position is stopped at the process position facing the substrate W. If the nozzle member 3001 is stopped, the body 3100 becomes the second state by the rotation of the rotary member 3200. In the second state, the process liquid injected into the buffer space B is discharged to the outside of the body 3100 through the discharge port 3160. In the second state, the bottom surface 3122 forming the buffering space B may be disposed to be smoother than the inclination of the bottom surface 3122 in the first state. In the second state, the inclination of the inclined portion 3122a may be smoother than the inclination of the inclined portion 3122a in the first state. Alternatively, in the second state, the bottom surface 3122 may be disposed parallel to the ground. In the second state, the inclined portion 3122a may be disposed parallel to the ground. Accordingly, the process liquid heated to the set temperature may be discharged from the buffer space B having strong heat resistance onto the substrate W rotated on the support unit 2630.
According to the above-described embodiments of the inventive concept, by heating the liquid in the buffer space B having strong heat resistance, damage to the components having weak heat resistance provided to the liquid supply apparatus can be minimized. In addition, since high-temperature vapor pressure generated in the process of heating the treatment liquid in the buffer space B can be effectively discharged, damage to the components due to the high-temperature vapor pressure can be minimized. In addition, the substrate W can be efficiently processed by directly discharging the processing liquid heated to the set temperature from the buffer space B onto the substrate W.
In addition to the liquid supply unit and the rotating member according to the above-described embodiment, a liquid supply unit according to another embodiment described below is similarly provided. Therefore, the description of the overlapping configuration will be omitted below.
Fig. 7 is a view schematically showing another embodiment of the liquid supply unit of fig. 2. Referring to fig. 7, the rotating member 3200 may be mounted at the top end of the support shaft 3400. The rotary member 3200 may be mounted at the top end of the support shaft 3400 to provide a rotational force to the support arm 3300. The rotary member 3200 may be provided as a known motor providing a rotational force. The rotating member 3200 may rotate the support arm 3300 in the up/down direction. The nozzle member 3001 may be fixedly installed at one end of the support arm 3300. The rotation member 3200 rotates the support arm 3300, and the nozzle member 3001 fixedly mounted on the support arm 3300 may be rotated in the up/down direction by the rotation of the support arm 3300. Thus, the position of the body 3100 may be changed between the first state and the second state.
Fig. 8 is a view schematically showing another embodiment of the liquid supply unit of fig. 2. Referring to fig. 8, rotary member 3200 may include first rotary member 3220 and second rotary member 3240. The first rotating member 3220 may be mounted at the top end of the support shaft 3400. A first rotating member 3220 may be installed at the top end of the support shaft 3400 to provide a rotational force to the support arm 3300. The first rotation member 3220 may be provided as a known motor providing a rotational force. The first rotation member 3220 may rotate the support arm 3300 in a first direction from the bottom toward the top.
The second rotation member 3240 may be mounted at one end of a support arm 2642. Second rotational member 3240 can be connected to body 3100. Second rotation member 3240 may be connected to a sidewall of body 3100. For example, the second rotation member 3240 may be connected to a bottom end of a sidewall of the main body 3100 facing the first side surface 3121. Second rotational member 3240 may rotate body 3100 about a dashed line through body 3100 as a central axis when viewed from the front. The rotary member 3200 may be provided as a motor. The rotary member 3200 may be variously modified by a known motor providing a driving force. Second rotation member 3240 can rotate body 3100 in a second direction from top to bottom.
If the process liquid injected into the buffer space B is discharged to the substrate W, the second rotation member 3240 may rotate the body 3100 in the second direction to discharge the heated process liquid to the substrate W through the discharge port 3160. If the second rotation member 3240 is rotated in the second direction, the first rotation member 3220 may be rotated in the first direction to correct the position where the processing liquid is discharged on the substrate W, so that the processing liquid accurately hits a preset discharge point on the substrate W.
Effects of the inventive concept are not limited to the above-described effects, and those not mentioned can be clearly understood from the description and the drawings by those skilled in the art to which the inventive concept pertains.
Although preferred embodiments of the inventive concept have been illustrated and described so far, the inventive concept is not limited to the above-described specific embodiments, and it should be noted that a person having ordinary skill in the art to which the inventive concept relates may implement the inventive concept in various ways without departing from the essence of the inventive concept claimed in the claims, and these modifications should not be construed separately from the technical spirit or prospect of the inventive concept.

Claims (20)

1. A substrate processing apparatus, comprising:
a processing container having a processing space;
a support unit configured to support a substrate at the processing space; and
a liquid supply unit for supplying a treatment liquid to the substrate supported by the support unit, and
wherein the liquid supply unit includes:
a nozzle member for discharging the treatment liquid; and
a driving member for moving the nozzle member to a standby position and a process position, and
wherein the nozzle member includes:
a body having a buffer space therein and having a discharge port configured to discharge the treatment liquid; and
a rotating member for changing the main body between a first state and a second state by rotation, and
wherein the first state is a state in which the treatment liquid injected into the buffer space is maintained so that the treatment liquid does not flow to the discharge port, and
the second state is a state in which the processing liquid injected into the buffer space is discharged to the outside of the main body through the discharge port.
2. The substrate processing apparatus of claim 1, wherein a bottom surface of the buffer space includes an inclined portion that is inclined downward toward a ground surface in a direction away from the discharge port.
3. The substrate processing apparatus of claim 2, wherein the bottom surface of the buffer space further comprises a horizontal portion extending in a horizontal direction with respect to a ground from a top end of the inclined portion.
4. The substrate processing apparatus of claim 1, wherein the nozzle member further comprises:
a heating member for heating the treatment liquid injected into the buffer space; and
a gas discharge member for discharging an atmosphere of the buffer space.
5. The substrate processing apparatus of claim 1, wherein the liquid supply unit comprises:
a supply pipe for supplying the treatment liquid to the buffer space; and
a supply valve for opening and closing the supply pipe.
6. The substrate processing apparatus of claim 5, wherein the body is provided in a material more heat resistant than the supply valve.
7. The substrate processing apparatus according to any one of claims 2 to 6, further comprising a controller for controlling the liquid supply unit, and
wherein the controller controls the rotating member to rotate the body such that the inclination of the body is changed between the first state and the second state.
8. The substrate processing apparatus according to claim 7, wherein the bottom surface of the buffer space is provided to be inclined with respect to a floor in the first state.
9. The substrate processing apparatus according to claim 8, wherein the bottom surface of the buffer space is provided to be less inclined or parallel to the ground in the second state than the first state.
10. The substrate processing apparatus of claim 9, wherein the processing liquid injected into the buffer space is supplied onto the substrate supported by the support unit as a single discharge amount.
11. A liquid supply unit for supplying a process liquid onto a substrate, comprising:
a nozzle member for discharging the treatment liquid; and
a driving member for moving the nozzle member to a standby position and a process position, and
wherein the nozzle member includes:
a body having a buffer space therein and a discharge port configured to discharge the treatment liquid; and
a rotating member for changing the main body between a first state and a second state by rotation, and
wherein the first state is a state in which the treatment liquid injected into the buffer space is maintained so as not to flow out from the discharge port, and
the second state is a state in which the processing liquid injected into the buffer space is discharged to the outside of the main body through the discharge port.
12. The liquid supply unit according to claim 11, wherein a bottom surface of the buffer space includes:
an inclined portion inclined downward toward the ground in a direction away from the discharge port; and
a horizontal portion extending from a top end of the inclined portion in a horizontal direction with respect to the ground, and
wherein the discharge port is provided at the horizontal portion.
13. The liquid supply unit according to claim 11, wherein the nozzle member further comprises:
a heating member for heating the treatment liquid injected into the buffer space; and
a gas discharge member for discharging an atmosphere of the buffer space.
14. The liquid supply unit according to claim 11, wherein the liquid supply unit further comprises:
a supply pipe for supplying the treatment liquid to the buffer space; and
a supply valve for opening and closing the supply pipe.
15. The liquid supply unit according to claim 14, wherein the main body is provided in a material more resistant to heat than the supply valve.
16. The liquid supply unit according to claim 12, wherein the bottom surface of the buffer space is provided to be inclined toward the ground in the first state, and the bottom surface of the buffer space is provided to be less inclined than the inclination of the first state or to be parallel to the ground in the second state.
17. A method of processing a substrate, comprising:
supplying a treatment liquid to a buffer space within a body and making the treatment liquid in the buffer space stand-by in a state in which a body of a nozzle member is in a first state, changing a position of the body to a second state, and discharging the treatment liquid in the buffer space through a discharge port provided at the body, and
wherein the first state is a state in which the treatment liquid injected into the buffer space is maintained so as not to flow toward the discharge port, and
the second state is a state in which the processing liquid injected into the buffer space is discharged to the outside of the main body through the discharge port.
18. The substrate processing method of claim 17, further comprising: heating the treatment liquid injected into the buffer space in the first state.
19. The substrate processing method according to claim 17, wherein the nozzle member is located at a standby position before the substrate is loaded on the support unit, and the nozzle member is moved from the standby position to a process position in which the processing liquid is supplied to the buffer space if the substrate is loaded on the support unit.
20. The substrate processing apparatus of any one of claims 17 to 19, wherein the amount of the process liquid supplied to the buffer space is a single discharge amount discharged onto the substrate.
CN202211137941.0A 2021-09-17 2022-09-19 Unit for supplying liquid, apparatus and method for treating substrate using the same Pending CN115831810A (en)

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KR10-2021-0124479 2021-09-17

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