CN115799351A - Laminated passivation film for reducing solar cell electroattenuation and preparation method thereof - Google Patents
Laminated passivation film for reducing solar cell electroattenuation and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a laminated passivation film for reducing solar cell electroattenuation, which comprises an aluminum oxide film, a silicon oxynitride film and a silicon nitride film which are sequentially arranged from bottom to top from a solar silicon substrate, and also provides a preparation method of the laminated passivation film for reducing solar cell electroattenuation. According to the invention, the content of H ions in the passivation layer is reduced, the stability of a passivation bond is increased, and the attenuation degree of the crystalline silicon solar cell caused by CID can be effectively reduced on the basis of not reducing the energy conversion efficiency of the solar cell, so that the crystalline silicon solar cell can keep a more stable working state and more efficient energy conversion efficiency in a complete life cycle.
Description
Technical Field
The invention relates to the technical field of coating of solar cells, in particular to a laminated passivation film for reducing solar cell electroattenuation and a preparation method thereof.
Background
Crystalline silicon solar cells are the most important photovoltaic devices and have been the area of intense interest in the silicon materials research community and the photovoltaic industry in recent years. It is known that crystalline silicon solar cell modules have attenuation phenomena in the use process, that is, the energy conversion efficiency of the cells can be attenuated to different degrees in the use process. Studies have shown that the main cause of this is Carrier Induced Degradation (CID). The degradation of power efficiency caused by CID has gradually become one of the key problems restricting the development of the photovoltaic industry.
Disclosure of Invention
Object of the Invention
In order to solve the problem of attenuation of the crystalline silicon solar cell caused by CID, the invention provides a laminated passivation film capable of effectively reducing the attenuation of the solar cell and a preparation method thereof.
Technical scheme
In order to achieve the purpose, the invention adopts the following technical scheme.
On one hand, the invention provides a laminated passivation film for reducing the electroattenuation of a solar cell, which comprises an aluminum oxide film, a silicon oxynitride film and a silicon nitride film which are sequentially arranged from bottom to top from a solar silicon substrate.
Further, the thickness of the alumina thin film layer is 5-12nm, and the refractive index is 1.55-1.59.
Furthermore, the thickness of the silicon oxide film layer is 1-15nm, and the refractive index is 1.46-1.55.
Furthermore, the thickness of the silicon oxynitride film layer is 5-25nm, and the refractive index is 1.6-1.9.
Further, the silicon nitride film is divided into a first silicon nitride film layer, a second silicon nitride film layer and a third silicon nitride film layer from bottom to top.
Furthermore, the thickness of the first silicon nitride film layer is 15-40nm, the refractive index is 2.25-2.45, the thickness of the second silicon nitride film layer is 5-20nm, the refractive index is 2.05-2.20, the thickness of the third silicon nitride film layer is 5-20nm, and the refractive index is 1.95-2.15.
On the other hand, the invention provides a preparation method of a laminated passivation film for reducing the electroattenuation of a solar cell, which comprises the following steps:
s1, forming a pyramid structure on the surface of a monocrystalline silicon wafer by a standard alkali texturing process in texturing equipment;
s2, diffusing the monocrystalline silicon wafer in a tubular low-pressure diffusion furnace taking phosphorus oxychloride as a doping source to prepare a junction;
s3, removing phosphorosilicate glass on four sides and the back of the silicon wafer in chain type equipment;
s4, carrying out back etching and polishing treatment on the silicon wafer in the groove type machine;
s5, preparing a front SiO2 layer in high-temperature tubular equipment;
s6, preparing a laminated passivation film on the back surface of the silicon substrate, wherein the steps S61, S62, S63, S64, S65 and S66 are included;
s61, preparing an aluminum oxide film on the back of the silicon substrate by a tubular PECVD method under the process conditions of 300 ℃, 1.5g/min TMA flow, 4500sccm nitrogen dioxide flow, 1500mTorr deposition pressure, 5kW deposition power, 100 seconds deposition time, 20 pulse switches and 1200 pulse switches;
s62, depositing silicon oxide by a PECVD method, wherein the deposition conditions comprise the temperature of 420 ℃, the flow rate of monosilane of 500sccm, the flow rate of nitrogen dioxide of 5000sccm, the deposition pressure of 1500mTorr, the deposition power of 6kw, the deposition time of 50 seconds, the pulse switch on of 50 and the pulse switch off of 1000;
s63, depositing silicon oxynitride by a PECVD method, wherein the deposition conditions comprise the temperature of 420 ℃, the flow rate of monosilane of 600sccm, the flow rate of ammonia of 2500sccm, the flow rate of nitrogen dioxide of 5000sccm, the deposition pressure of 1500mTorr, the deposition power of 9kw, the deposition time of 120 seconds, the pulse switch-on of 50 and the pulse switch-off of 800;
s64, depositing a first silicon nitride film layer by a PECVD method, wherein the deposition conditions comprise the temperature of 420 ℃, the ammonia gas of 5000sccm, the silane of 800sccm, the deposition pressure of 1600mTorr, the deposition power of 8kW, the deposition time of 350 seconds, the pulse switch-on of 50 and the pulse switch-off of 700;
s65, depositing a second silicon nitride film layer by a PECVD method, wherein the deposition conditions comprise the temperature of 420 ℃, the ammonia gas of 5000sccm, the silane of 1150sccm, the deposition pressure of 1600mTorr, the deposition power of 8kW, the deposition time of 110 seconds, the pulse switch-on of 50 and the pulse switch-off of 700;
s66, depositing the third silicon nitride film layer by a PECVD method under the conditions of 420 ℃, 6000sccm of ammonia gas, 550sccm of silane, 1600mTorr of deposition pressure, 8kW of deposition power, 150 seconds of deposition time, 50 pulse on and 700 pulse off.
Advantageous effects
The method can effectively reduce the attenuation degree of the crystalline silicon solar cell caused by CID on the basis of not reducing the energy conversion efficiency of the solar cell, so that the crystalline silicon solar cell can keep a more stable working state and more efficient energy conversion efficiency in a complete life cycle.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment of the present invention;
FIG. 2 is a CID attenuation rate statistical chart of an embodiment of the present invention and a conventional product on the market;
the silicon nitride film comprises a 1-aluminum oxide film, a 2-silicon oxide film, a 3-silicon oxynitride film, a 4-first silicon nitride film, a 5-second silicon nitride film, a 6-third silicon nitride film, a 7-silicon substrate, an 8-PN junction and a 9-front silicon nitride film.
Detailed Description
In order that those skilled in the art will better understand the disclosure of the present invention, the present invention will now be further described with reference to the accompanying drawings and detailed description.
Examples
As shown in FIG. 1, the invention provides a laminated passivation film for reducing the electroattenuation of a solar cell, which comprises an aluminum oxide film 1, a silicon oxide film 2, a silicon oxynitride film 3 and a silicon nitride film which are arranged in sequence from bottom to top from a solar silicon substrate 7. The thickness of the film layer of the alumina film 1 was 10nm, and the refractive index was 1.56. The thickness of the thin film layer of the silicon oxide thin film 2 is 12nm, and the refractive index is 1.50. The thickness of the film layer of the silicon oxynitride film 3 is 12nm, and the refractive index is 1.8. The silicon nitride film comprises a first silicon nitride film layer 4, a second silicon nitride film layer 5 and a third silicon nitride film layer 6 from bottom to top, wherein the first silicon nitride film layer 4 is 20nm in thickness and 2.35 in refractive index, the second silicon nitride film layer 5 is 10nm in thickness and 2.15 in refractive index, and the third silicon nitride film layer 6 is 10nm in thickness and 2.00 in refractive index.
And a conventional front silicon nitride film 9 is arranged outside the PN junction 8 on the other side of the solar silicon substrate 7, the film thickness of the front silicon nitride film 9 is 12nm, and the refractive index is 2.15.
The refractive index as used herein refers to the refractive index of a light source having a wavelength of 600 nm.
The invention also provides a preparation method of the laminated passivation film for reducing the electrodegradation of the solar cell, which comprises the following steps:
s1, forming a pyramid structure on the surface of a monocrystalline silicon wafer by a standard alkali texturing process in texturing equipment;
s2, diffusing the monocrystalline silicon wafer in a tubular low-pressure diffusion furnace taking phosphorus oxychloride as a doping source to prepare a junction;
s3, removing phosphorosilicate glass on four sides and the back of the silicon wafer in chain type equipment;
s4, carrying out back etching and polishing treatment on the silicon wafer in the groove type machine;
s5, preparing a front SiO2 layer in high-temperature tubular equipment;
s6, preparing a laminated passivation film on the back surface of the silicon substrate 7, wherein the steps S61, S62, S63, S64, S65 and S66 are included;
s61, preparing an aluminum oxide film 1 on the back surface of a silicon substrate 7 by a tubular PECVD method under the process conditions of 300 ℃ of temperature, 1.5g/min of TMA flow, 4500sccm of nitrogen dioxide flow, 1500mTorr of deposition pressure, 5kW of deposition power, 100 seconds of deposition time, 20 pulse switching-on and 1200 pulse switching-off;
s62, depositing silicon oxide by a PECVD method, wherein the deposition conditions comprise the temperature of 420 ℃, the flow rate of monosilane of 500sccm, the flow rate of nitrogen dioxide of 5000sccm, the deposition pressure of 1500mTorr, the deposition power of 6kw, the deposition time of 50 seconds, the pulse switch on of 50 and the pulse switch off of 1000;
s63, depositing silicon oxynitride by a PECVD method, wherein the deposition conditions comprise the temperature of 420 ℃, the flow rate of monosilane of 600sccm, the flow rate of ammonia of 2500sccm, the flow rate of nitrogen dioxide of 5000sccm, the deposition pressure of 1500mTorr, the deposition power of 9kw, the deposition time of 120 seconds, a pulse switch of 50 and a pulse switch of 800;
s64, depositing the first silicon nitride film layer 4 by a PECVD method, wherein the deposition conditions comprise the temperature of 420 ℃, the ammonia gas of 5000sccm, the silane of 800sccm, the deposition pressure of 1600mTorr, the deposition power of 8kW, the deposition time of 350 seconds, the pulse switch-on of 50 and the pulse switch-off of 700;
s65, depositing a second silicon nitride film layer 5 by a PECVD method, wherein the deposition conditions comprise the temperature of 420 ℃, ammonia gas of 5000sccm, monosilane of 1150sccm, deposition pressure of 1600mTorr, deposition power of 8kW, deposition time of 110 seconds, pulse on 50 and pulse off 700;
s66, depositing the third silicon nitride film layer 6 by a PECVD method under the conditions of 420 ℃, 6000sccm of ammonia gas, 550sccm of silane, 1600mTorr of deposition pressure, 8kW of deposition power, 150 seconds of deposition time, 50 pulse on and 700 pulse off.
After the above steps are completed, the front surface silicon nitride film 9 is deposited on the front surface of the silicon substrate according to the normal tubular PECVD, and the sample of the embodiment can be obtained.
The invention increases the stability of the passivation bond and reduces the CID problem of the solar cell by reducing the content of H ions in the passivation layer. Specifically, the specific data for this example is shown in the experimental group in table one below, which represents the data performance of a conventional product in the market that did not employ the inventive scheme.
Watch 1
| Label (R) | Eta/% | Uoc/V | Isc/A | FF | Rs/Ω | IRev2/A |
| General group | 23.15 | 0.6894 | 13.5052 | 82.01 | 0.13 | 0.15 |
| Experimental group | 23.15 | 0.6896 | 13.4947 | 82.06 | 0.13 | 0.14 |
| Difference value | 0.0 | 0.0002 | -0.0105 | 0.05 | 0.00 | -0.01 |
In the table, eta represents energy conversion efficiency, uoc represents open circuit voltage, isc represents short circuit current, FF represents fill factor, rs represents series resistance of the solar cell, and IRev2 represents reverse leakage; the electrical property data in the table are mean values.
The performance of the CID attenuation ratio of this example (experimental group in Table one) and that of the conventional product (conventional group in Table one) not using the scheme of the present invention in the market is shown in FIG. 2. The attenuation rate of the invention is 0.0995%, and the attenuation rate of the conventional group is 0.587%, thus the invention effectively reduces the attenuation degree of the crystalline silicon solar cell caused by CID.
The above description is only of the preferred embodiments of the present invention, and it should be noted that: it will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the invention and these are intended to be within the scope of the invention.
Claims (7)
1. A laminated passivation film for reducing solar cell electrodegradation, comprising: the solar silicon solar cell comprises an aluminum oxide film (1), a silicon oxide film (2), silicon oxynitride films (3) and (2) and a silicon nitride film which are sequentially arranged from bottom to top from a solar silicon substrate (7).
2. The laminated passivation film for reducing solar cell electrodegradation of claim 1, wherein: the thickness of the film layer of the aluminum oxide film (1) is 5-12nm, and the refractive index is 1.55-1.59.
3. The laminated passivation film for reducing solar cell electroattenuation of claim 1, wherein: the thickness of the film layer of the silicon oxide film (2) is 1-15nm, and the refractive index is 1.46-1.55.
4. The laminated passivation film for reducing solar cell electroattenuation of claim 1, wherein: the thickness of the film layers of the silicon oxynitride films (3) and (2) is 5-25nm, and the refractive index is 1.6-1.9.
5. The laminated passivation film for reducing solar cell electroattenuation of claim 1, wherein: the silicon nitride film is divided into a first silicon nitride film layer (4), a second silicon nitride film layer (5) and a third silicon nitride film layer (6) from bottom to top.
6. The laminated passivation film for reducing solar cell electrodegradation of claim 5, wherein: the thickness of the first silicon nitride film layer (4) is 15-40nm, the refractive index is 2.25-2.45, the thickness of the second silicon nitride film layer (5) is 5-20nm, the refractive index is 2.05-2.20, the thickness of the first silicon nitride film layer (4) is 5-20nm, and the refractive index is 1.95-2.15.
7. A method for preparing a laminated passivation film for reducing solar cell electrodegradation according to any one of claims 1 to 6, comprising the steps of:
s1, forming a pyramid structure on the surface of a monocrystalline silicon wafer by a standard alkali texturing process in texturing equipment;
s2, diffusing the monocrystalline silicon wafer in a tubular low-pressure diffusion furnace taking phosphorus oxychloride as a doping source to prepare a junction;
s3, removing phosphorosilicate glass on four sides and the back of the silicon wafer in chain type equipment;
s4, carrying out back etching and polishing treatment on the silicon wafer in the groove type machine;
s5, preparing a front SiO2 layer in high-temperature tubular equipment;
s6, preparing a laminated passivation film on the back surface of the silicon substrate (7), wherein the steps S61, S62, S63, S64, S65 and S66 are specifically included;
s61, preparing an aluminum oxide film (1) on the back surface of a silicon substrate (7) by a tubular PECVD method under the process conditions of 300 ℃ of temperature, 1.5g/min of TMA flow, 4500sccm of nitrogen dioxide flow, 1500mTorr of deposition pressure, 5kW of deposition power, 100 seconds of deposition time, 20 pulse switch and 1200 pulse switch;
s62, depositing silicon oxide by a PECVD method, wherein the deposition conditions comprise the temperature of 420 ℃, the flow rate of monosilane of 500sccm, the flow rate of nitrogen dioxide of 5000sccm, the deposition pressure of 1500mTorr, the deposition power of 6kw, the deposition time of 50 seconds, the pulse switch on of 50 and the pulse switch off of 1000;
s63, depositing silicon oxynitride by a PECVD method, wherein the deposition conditions comprise the temperature of 420 ℃, the flow rate of monosilane of 600sccm, the flow rate of ammonia of 2500sccm, the flow rate of nitrogen dioxide of 5000sccm, the deposition pressure of 1500mTorr, the deposition power of 9kw, the deposition time of 120 seconds, the pulse switch-on of 50 and the pulse switch-off of 800;
s64, depositing the first silicon nitride film layer (4) by a PECVD method, wherein the deposition conditions comprise that the temperature is 420 ℃, the ammonia gas is 5000sccm, the silane is 800sccm, the deposition pressure is 1600mTorr, the deposition power is 8kW, the deposition time is 350 seconds, the pulse is turned on 50 and the pulse is turned off 700;
s65, depositing a second silicon nitride film layer (5) by a PECVD method, wherein the deposition conditions comprise that the temperature is 420 ℃, the ammonia gas is 5000sccm, the silane is 1150sccm, the deposition pressure is 1600mTorr, the deposition power is 8kW, the deposition time is 110 seconds, the pulse is turned on 50, and the pulse is turned off 700;
s66, depositing the third silicon nitride film layer (6) by a PECVD method under the conditions of 420 ℃, 6000sccm of ammonia gas, 550sccm of monosilane, 1600mTorr of deposition pressure, 8kW of deposition power, 150 seconds of deposition time, 50 times of pulse switching and 700 times of pulse switching.
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