CN115775826A - P-type gate enhanced GaN-based power device, preparation method thereof and electronic equipment - Google Patents
P-type gate enhanced GaN-based power device, preparation method thereof and electronic equipment Download PDFInfo
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Abstract
The invention discloses a P-type grid enhancement type GaN-based power device and a preparation method thereof, wherein the P-type grid enhancement type GaN-based power device comprises a substrate, and a buffer layer, a GaN pressure-resistant layer, a GaN channel layer, an AlN insert layer, an AlGaN barrier layer and a GaN cap layer which are sequentially stacked on the substrate, wherein a source electrode, a drain electrode and a grid electrode growing on the surface of the P-type composite layer are arranged on the surface of the GaN cap layer; the P-type composite layer comprises a plurality of first Mg atom diffusion blocking layers, second Ga atom desorption layers and third Mg atom adsorption layers which are periodically and alternately stacked and grown in sequence. The P-type gate enhanced GaN-based power device provided by the invention can solve the problems of difficult ionization and low ionization rate of Mg atoms of acceptor impurities.
Description
Technical Field
The invention relates to the technical field of photoelectricity, in particular to a P-type gate enhanced GaN-based power device, a preparation method thereof and electronic equipment.
Background
An AlGaN/GaN heterostructure-based HEMT (high electron mobility transistor) has high current density, critical breakdown voltage and electron mobility, and has very important application values in the fields of microwave power and high-temperature electronic devices.
The HEMT generally comprises a chip and a source electrode, a drain electrode and a grid electrode which are positioned on the chip, and a traditional depletion type GaN-based HEMT device cannot realize a circuit false start prevention protection function in radio frequency and power circuit application, so that an enhancement type GaN-based HEMT device needs to be developed to simplify circuit design and improve circuit safety. At present, the enhancement technology of the commercial GaN-based HEMT device is a P-type gate technology, and the P-type gate realizes enhancement by growing P-type nitride between a gate and a barrier layer, increasing the conduction band bottom of a heterojunction above the Fermi level and exhausting the 2DEG in a sub-gate region. The P-type gate enhancement device does not need to carry out an additional processing process on the gate, does not have the problem of gate instability, has high reliability and becomes the first choice for commercialization of the GaN power device.
However, the P-type gate enhancement type GaN-based HEMT device still faces the problem of low P-type doping concentration because the energy level of the acceptor impurity magnesium (Mg) in the P-type semiconductor is very high, so that ionization of the acceptor impurity magnesium (Mg) is difficult (170 meV), and the ionization rate is only 1%. Meanwhile, the problem of larger grid leakage occurs, the higher hole concentration cannot be obtained only by increasing the doping concentration of magnesium, and the crystal defect occurs after heavy doping, so that the compensation of acceptor doping comes from the crystal defect (self-compensation), thereby influencing the acceptor doping concentration and the acceptor level height, and the problems such as the above restrict the further popularization and application of the enhancement device.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a P-type gate enhanced GaN-based power device, which can solve the problems of difficult ionization and low ionization rate of acceptor impurity Mg atoms.
The technical problem to be solved by the invention is to provide a preparation method of the P-type gate enhanced GaN-based power device, which is simple in process and can stably prepare the P-type gate enhanced GaN-based power device with good performance.
In order to solve the technical problem, the invention provides a P-type gate enhanced GaN-based power device which comprises a substrate, and a buffer layer, a GaN pressure-resistant layer, a GaN channel layer, an AlN insertion layer, an AlGaN barrier layer and a GaN cap layer which are sequentially stacked on the substrate, wherein a source electrode, a drain electrode and a grid electrode growing on the surface of the P-type composite layer are arranged on the surface of the GaN cap layer;
the P-type composite layer comprises a plurality of first Mg atom diffusion blocking layers, second Ga atom desorption layers and third Mg atom adsorption layers which are periodically and alternately stacked and grown in sequence.
In one embodiment, the number of cycles of the first Mg atom diffusion blocking layer, the second Ga atom desorption layer, and the third Mg atom adsorption layer is 2 to 20.
In one embodiment, the thickness of the P-type composite layer is 10nm to 200nm.
In one embodiment, in the P-type composite layer, the thickness of the first Mg atom diffusion blocking layer is 70% to 80%, the thickness of the second Ga atom desorption layer is 10% to 20%, and the thickness of the third Mg atom adsorption layer is 1% to 20%.
In one embodiment, the doping concentration of Mg in the P-type composite layer is 1 × 10 20 atoms/cm 3 -1×10 21 atoms/cm 3 。
In order to solve the above problems, the present invention further provides a method for manufacturing the P-type gate enhanced GaN-based power device, comprising the following steps:
preparing a substrate;
depositing a buffer layer, a GaN voltage-resisting layer, a GaN channel layer, an AlN insert layer, an AlGaN barrier layer and a GaN cap layer on the substrate in sequence;
preparing a source electrode and a drain electrode on the surface of the GaN capping layer, depositing a P-type composite layer on the surface of the GaN capping layer, and preparing a grid electrode on the surface of the P-type composite layer;
the P-type composite layer comprises a plurality of first Mg atom diffusion blocking layers, second Ga atom desorption layers and third Mg atom adsorption layers which are periodically and alternately stacked and grown in sequence.
In one embodiment, the first Mg atom diffusion barrier layer is deposited by:
controlling the growth temperature of the reaction cavity to be 800-1100 ℃, introducing a gallium source, a nitrogen source and a magnesium source, and performing surface diffusion on gallium atoms and nitrogen atoms to form the first Mg atom diffusion blocking layer.
In one embodiment, the second Ga atom-desorbing layer is deposited by:
and controlling the growth temperature of the reaction cavity to be 1100-1400 ℃, introducing a gallium source and a nitrogen source, and gradually reducing the introduction amount of the gallium source to be closed to form the second Ga atom desorption layer.
In one embodiment, the third Mg atom adsorption layer is deposited by the following method:
controlling the growth temperature of the reaction cavity to be 500-800 ℃, introducing a magnesium source and a nitrogen source, and performing surface diffusion on magnesium atoms to form the third Mg atom adsorption layer.
Correspondingly, the invention also provides electronic equipment which comprises the P-type gate enhanced GaN-based power device.
The implementation of the invention has the following beneficial effects:
compared with the prior art, the GaN cap layer is additionally provided with the P-type composite layer, and the P-type composite layer comprises a plurality of first Mg atom diffusion blocking layers, second Ga atom desorption layers and third Mg atom adsorption layers which are periodically and alternately stacked and grown in sequence. The first Mg atom diffusion blocking layer can effectively block Mg atoms in the third Mg atom adsorption layer from diffusing to the AlGaN barrier layer and the GaN channel layer, so that carrier traps and leakage channels are reduced, and the performance and reliability of the HEMT device are improved. The second Ga atom desorption layer accurately regulates and controls the desorption rate of Ga atoms of the GaN material, and lays a cushion for the efficient incorporation of Mg atoms in the third Mg atom adsorption layer. And the third Mg atom adsorption layer efficiently incorporates Mg atoms into a GaN material by utilizing the surface effect on the basis of the second Ga atom desorption layer, and finally, the high-quality P-type GaN semiconductor layer with a smooth surface and high hole concentration is obtained. The problems of difficult ionization and low ionization rate of the acceptor impurity Mg atoms are finally solved under the interaction of the sublayers of the P-type composite layer.
Drawings
Fig. 1 is a schematic structural diagram of a P-type gate enhanced GaN-based power device provided by the present invention.
Wherein: the GaN-based light-emitting diode comprises a substrate 1, a buffer layer 2, a GaN voltage-withstanding layer 3, a GaN channel layer 4, an AlN insert layer 5, an AlGaN barrier layer 6, a GaN cap layer 7, a P-type composite layer 8, a drain electrode 9, a source electrode 10 and a grid electrode 11.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below.
Unless otherwise indicated or contradicted, terms or phrases used herein have the following meanings:
in the present invention, the terms "combination thereof", "any combination thereof", and the like include all suitable combinations of any two or more of the listed items.
In the present invention, "preferred" is only an embodiment or an example for better description, and it should be understood that the scope of the present invention is not limited thereto.
In the present invention, the technical features described in the open type include a closed technical solution composed of the listed features, and also include an open technical solution including the listed features.
In the present invention, the numerical range is defined to include both end points of the numerical range unless otherwise specified.
In order to solve the above problems, the present invention provides a P-type gate enhancement type GaN-based power device, as shown in fig. 1, including a substrate 1, and a buffer layer 2, a GaN voltage-withstanding layer 3, a GaN channel layer 4, an AlN insertion layer 5, an AlGaN barrier layer 6, and a GaN cap layer 7 stacked on the substrate 1 in sequence, where the surface of the GaN cap layer 7 is provided with a source 10, a drain 9, and a gate 11 grown on the surface of a P-type composite layer 8;
the P-type composite layer 8 comprises a plurality of first Mg atom diffusion blocking layers, second Ga atom desorption layers and third Mg atom adsorption layers which are periodically and alternately stacked and grown in sequence.
In the prior art, a P-type GaN semiconductor is generally doped with Mg in GaN, and the energy level of acceptor impurity magnesium (Mg) is very high, so that ionization of acceptor impurity magnesium (Mg) is difficult (170 meV), the ionization rate is only 1%, higher hole concentration cannot be obtained by simply increasing the doping concentration of magnesium (Mg), crystal defects occur after heavy doping, and compensation of acceptor doping comes from the crystal defects (self-compensation), so that the acceptor doping concentration and the acceptor level height are influenced.
Compared with the prior art, the GaN cap layer 7 is additionally provided with the P-type composite layer 8, and the P-type composite layer 8 comprises a plurality of first Mg atom diffusion blocking layers, second Ga atom desorption layers and third Mg atom adsorption layers which are periodically and alternately stacked and grown in sequence. The first Mg atom diffusion blocking layer can effectively block Mg atoms in the third Mg atom adsorption layer from diffusing into the AlGaN barrier layer 6 and the GaN channel layer 4, so that the formation of carrier traps and leakage channels is reduced, and the performance and reliability of the HEMT device are improved. The second Ga atom desorption layer accurately regulates and controls the desorption rate of Ga atoms of the GaN material, and lays a cushion for the efficient incorporation of Mg atoms in the third Mg atom adsorption layer. And the third Mg atom adsorption layer efficiently incorporates Mg atoms into a GaN material by utilizing the surface effect on the basis of the second Ga atom desorption layer, and finally, the high-quality P-type GaN semiconductor layer with a smooth surface and high hole concentration is obtained. The problems of difficult ionization and low ionization rate of the acceptor impurity Mg atoms are finally solved under the interaction of the sublayers of the P-type composite layer 8.
The P-type composite layer 8 comprises a plurality of first Mg atom diffusion blocking layers, second Ga atom desorption layers and third Mg atoms which are periodically and alternately stacked and grown in sequenceAnd an adsorption layer. The number of cycle periods here is too small to obtain a high hole concentration; the cycle period number is too large, the Mg doping concentration in the P-type gate is inevitable along with the increment of the cycle period number, the Mg doping with high concentration can cause the appearance of a reverse phase domain, a point defect and screw dislocation caused by surface Mg protrusion, the crystal quality of the P-type gate material is reduced, and the Mg has a memory effect and can further diffuse into the AlGaN barrier layer 6, the GaN cap layer 7 and the GaN channel layer 4. In one embodiment, the number of cycles of the first Mg atom diffusion blocking layer, the second Ga atom desorption layer, and the third Mg atom adsorption layer is 2 to 20. In one embodiment, the doping concentration of Mg in the P-type composite layer 8 is 1 × 10 20 atoms/cm 3 -1×10 21 atoms/cm 3 。
In one embodiment, the thickness of the P-type composite layer 8 is 10nm to 200nm. Preferably, in the P-type composite layer 8, the thickness of the first Mg atom diffusion blocking layer is 70% to 80%, the thickness of the second Ga atom desorption layer is 10% to 20%, and the thickness of the third Mg atom adsorption layer is 1% to 20%.
It should be noted that, the thickness of the first Mg atom diffusion blocking layer is greater than that of the third Mg atom adsorption layer according to the above range, so that it can be ensured that Mg atoms of the third Mg atom adsorption layer are effectively blocked by the first Mg atom diffusion blocking layer, and Mg atoms doped with a memory effect can further diffuse into a barrier and a channel, so that it is required to ensure effective blocking by the first Mg atom diffusion blocking layer.
The thickness of the second Ga atom-desorbing layer is larger than that of the third Mg atom-adsorbing layer in the above range, so that Ga vacancies left in the second Ga atom-desorbing layer can be sufficiently filled with Mg atoms in the third Mg atom-adsorbing layer instead. However, in consideration of the memory effect of Mg atoms, not all Mg atoms can replace Ga vacancies to increase the hole concentration of GaN, but a part of Mg atoms can further diffuse into the AlGaN barrier layer 6, the GaN cap layer 7 and the GaN channel layer 4, and the part of Mg atoms can be blocked by the first Mg atom diffusion blocking layer, so that the high hole concentration of the P-type gate is increased, and the crystal quality of the materials of the P-type gate, the AlGaN barrier layer 6, the GaN cap layer 7 and the GaN channel layer 4 is also ensured.
More preferably, the thickness of the first Mg atom diffusion blocking layer is 0.1nm to 10nm, the thickness of the second Ga atom desorption layer is 0.1nm to 10nm, and the thickness of the third Mg atom adsorption layer is 0.1nm to 10nm.
In one embodiment, the first Mg atom diffusion barrier layer is grown by:
controlling the growth temperature of the reaction cavity to be 800-1100 ℃, introducing a gallium source, a nitrogen source and a magnesium source, and performing surface diffusion on gallium atoms and nitrogen atoms to form the first Mg atom diffusion blocking layer. Preferably, the nitrogen source NH 3 The atmosphere is 35slm to 50slm. In the process, gallium atoms and nitrogen atoms enter the reaction chamber and then are adsorbed on the surface of the substrate 1 for surface diffusion through gas phase diffusion, the diffusion coefficient reaches the best at the temperature of 800-1100 ℃, and surface reaction occurs to form the gallium nitride film.
In one embodiment, the second Ga atom-desorbing layer is grown by:
and controlling the growth temperature of the reaction cavity to be 1100-1400 ℃, introducing a gallium source and a nitrogen source, and gradually reducing the introduction amount of the gallium source to be closed to form the second Ga atom desorption layer. Preferably, the nitrogen source NH 3 The atmosphere is 35slm to 50slm. The flow of the gallium source is gradually reduced to be closed at a speed of reducing 30% -60% per minute. During this process, the gallium source is reduced until after interruption, and the NH of the reaction chamber is maintained continuously 3 The atmosphere is unchanged, gallium atoms are gradually desorbed from the gallium nitride film, and the desorption efficiency reaches the maximum at 1100-1400 ℃, so that the third Mg atom adsorption layer is laid for the efficient incorporation of Mg atoms.
In one embodiment, the third Mg atom adsorption layer is grown by a method comprising:
controlling the growth temperature of the reaction cavity to be 500-800 ℃, introducing a magnesium source and a nitrogen source, and performing surface diffusion on magnesium atoms to form the third Mg atom adsorption layer. Preferably, the nitrogen source NH 3 The atmosphere is 35slm to 50slm. During this process, the growth temperatureThe diffusion coefficient of magnesium atoms is controlled to be optimal at 500-800 ℃, and the magnesium atoms replace vacancies desorbed by gallium atoms and are efficiently incorporated into the gallium nitride film, so that the hole concentration of the P-type composite layer 8 is improved.
According to the P-type composite layer 8 prepared by the specific method, the first Mg atom diffusion blocking layer effectively prevents Mg from diffusing into the AlGaN barrier layer 6 and the GaN channel layer 4, reduces the formation of carrier traps and leakage channels, and improves the performance and reliability of the HEMT device. The second Ga atom desorption layer accurately controls the desorption rate of Ga atoms on a GaN material by regulating and controlling the growth temperature, the ammonia gas atmosphere and the flow of a Ga source, and a good bedding is made for the efficient incorporation of Mg atoms in the third Mg atom adsorption layer. And the third Mg atom adsorption layer realizes the efficient incorporation of Mg atoms by regulating and controlling the growth temperature, the ammonia atmosphere and the flow of a Mg source by utilizing the surface effect. The problems of difficult ionization and low ionization rate of the acceptor impurity Mg atoms are solved under the comprehensive action of the three-layer structure.
Correspondingly, the invention also provides a preparation method of the P-type gate enhanced GaN-based power device, which comprises the following steps:
preparing a substrate 1;
depositing a buffer layer 2, a GaN voltage-withstanding layer 3, a GaN channel layer 4, an AlN insert layer 5, an AlGaN barrier layer 6 and a GaN cap layer 7 on the substrate 1 in sequence;
preparing a source electrode 10 and a drain electrode 9 on the surface of the GaN capping layer 7, depositing a P-type composite layer 8 on the surface of the GaN capping layer 7, and preparing a grid electrode 11 on the surface of the P-type composite layer 8;
the P-type composite layer 8 comprises a plurality of first Mg atom diffusion blocking layers, second Ga atom desorption layers and third Mg atom adsorption layers which are periodically and alternately stacked and grown in sequence.
Specifically, the method comprises the following steps:
s1, providing a substrate 1 required by growth; preferably, a Si (111) crystal plane is used as the epitaxial layer growth substrate 1.
S2, depositing a buffer layer 2 on the substrate 1;
in one embodiment of the method of the present invention,depositing a buffer layer 2 on the substrate 1 by adopting a metal organic gas phase chemical deposition method, wherein the growth pressure of a reaction chamber is 50-200 torr, the rotating speed of a graphite base is controlled at 500-1000 r/min, and NH with the flow of 30-70 slm is introduced 3 And as a nitrogen source, introducing trimethylaluminum with the flow rate of 100-400 sccm as an aluminum source, introducing trimethylgallium with the flow rate of 50-200 sccm as a gallium source, and depositing a buffer layer 2 with the alternating Al component gradient, wherein AlN and AlGaN with the thickness of 500-1000 nm are alternately laminated on the substrate 1.
S3, depositing a GaN voltage-resistant layer 3 on the buffer layer 2;
in one embodiment, NH is flowed into buffer layer 2 at a flow rate of 10slm to 60slm 3 As nitrogen source, introducing TMGa with the flow of 200sccm-500sccm as gallium source, introducing ferrocene as dopant, wherein the doping concentration of Fe is 1 × 10 19 atoms/cm 3 -1×10 20 atoms/cm 3 And raising the temperature of the reaction chamber to 800-1200 ℃, controlling the pressure to be 100-500 torr, and reducing the rotating speed of the graphite base to 500-1000 r/min, so that a GaN pressure-resistant layer 3 grows, and controlling the thickness of the GaN pressure-resistant layer 3 to be 500-10000 nm.
S4, depositing a GaN channel layer 4 on the GaN voltage-proof layer 3;
in one embodiment, the temperature of the reaction chamber is maintained to 700-1300 ℃, the pressure is controlled to 50-250 torr, the rotation speed of the graphite base is controlled to 800-1200 r/min, NH with the flow rate of 40-90 slm is introduced 3 And as a nitrogen source, introducing TMGa with the flow of 300sccm-800sccm as a gallium source, growing an unintentionally doped GaN layer with high crystal quality, namely the GaN channel layer 4, and controlling the thickness of the two-dimensional combined growth layer to be 100nm-2000nm.
S5, depositing an AlN insert layer 5 on the GaN channel layer 4;
in one embodiment, the temperature of the reaction chamber is increased to 1000-1300 ℃, the pressure is controlled at 50-250 torr, the rotation speed of the graphite base is controlled at 800-1200 r/min, and NH with the flow rate of 30-80 slm is introduced 3 As a nitrogen source, introducing trimethylaluminum with the flow rate of 100sccm-400sccm as an aluminum source,and the thickness of the AlN insert layer 5 is controlled to be 0.5nm-10nm.
S6, depositing an AlGaN barrier layer 6 on the AlN insert layer 5;
in one embodiment, the temperature of the reaction chamber is maintained to 1000-1250 ℃, the pressure is controlled to 50-250 torr, the rotation speed of the graphite base is controlled to 800-1200 r/min, and NH with the flow rate of 30-80 slm is introduced 3 Introducing trimethylaluminum with the flow rate of 100-400 sccm as an aluminum source, introducing TMGa with the flow rate of 50-200 sccm as a gallium source, and controlling the thickness of the AlGaN barrier layer 6 to be 5-50 nm.
S7, depositing a GaN capping layer 7 on the AlGaN barrier layer 6;
in one embodiment, the temperature of the reaction chamber is raised to 1000-1300 ℃, the pressure is controlled to 100-250 torr, the rotation speed of the graphite base is controlled to 800-1200 r/min, and NH with the flow rate of 40-90 slm is introduced 3 And (3) as a nitrogen source, introducing TMGa with the flow of 10sccm-50sccm as a gallium source, growing a GaN capping layer 7, and controlling the thickness of the GaN capping layer 7 to be 1nm-10nm.
S8, depositing a P-type composite layer 8 on the GaN cap layer 7;
and periodically and sequentially stacking and growing a first Mg atom diffusion blocking layer, a second Ga atom desorption layer and a third Mg atom adsorption layer on the surface of the GaN capping layer 7 in turn.
In one embodiment, the temperature of the reaction chamber is controlled to be 500-1400 ℃, the pressure is controlled to be 100-500 torr, the rotation speed of the graphite base is controlled to be 800-1200 r/min, and NH with the flow rate of 30-90 slm is introduced 3 As nitrogen source, introducing TEGa with the flow of 100sccm-800sccm as a gallium source, and introducing magnesium metallocene as a dopant, wherein the doping concentration of Mg is 1 × 10 20 atoms/cm 3 -1×10 21 atoms/cm 3 。
In one embodiment, the first Mg atom diffusion barrier layer is grown by:
controlling the growth temperature of the reaction cavity to be 800-1100 ℃, introducing a gallium source, a nitrogen source and a magnesium source, and performing surface treatment on gallium atoms and nitrogen atomsSurface diffusion forms the first Mg atom diffusion blocking layer. Preferably, the nitrogen source NH 3 The atmosphere is 35slm to 50slm. In the process, gallium atoms and nitrogen atoms enter the reaction chamber and then are adsorbed on the surface of the substrate 1 for surface diffusion through gas phase diffusion, the diffusion coefficient reaches the best at the temperature of 800-1100 ℃, and surface reaction occurs to form the gallium nitride film.
In one embodiment, the second Ga atom-desorbing layer is deposited by:
controlling the growth temperature of the reaction cavity to be 1100-1400 ℃, introducing a gallium source and a nitrogen source, and gradually reducing the introduction amount of the gallium source to be closed to form the second Ga atom desorption layer. Preferably, the nitrogen source NH 3 The atmosphere is 35slm to 50slm. The flow of the gallium source is gradually reduced to off at a rate of 30% -60% reduction per minute. During this process, the gallium source is reduced until after interruption, and the NH of the reaction chamber is maintained continuously 3 And (3) gradually desorbing gallium atoms from the gallium nitride film without changing the atmosphere, wherein the desorption efficiency reaches the maximum at 1100-1400 ℃, so that a laying mat is made for the efficient incorporation of Mg atoms in the third Mg atom adsorption layer.
In one embodiment, the third Mg atom adsorption layer is grown by a method comprising:
controlling the growth temperature of the reaction cavity to be 500-800 ℃, introducing a magnesium source and a nitrogen source, and performing surface diffusion on magnesium atoms to form the third Mg atom adsorption layer. Preferably, the nitrogen source NH 3 The atmosphere is 35slm to 50slm. In the process, the growth temperature is controlled to be 500-800 ℃, the diffusion coefficient of magnesium atoms reaches the best, and the vacancy desorbed by gallium atoms is replaced, and the magnesium atoms are efficiently merged into the gallium nitride film, so that the hole concentration of the P-type composite layer 8 is improved.
The first Mg atom diffusion blocking layer effectively prevents Mg from diffusing into the AlGaN barrier layer 6 and the GaN channel layer 4, reduces the formation of a carrier trap and a leakage channel, and improves the performance and reliability of the HEMT device. The second Ga atom desorption layer accurately controls the desorption rate of Ga atoms on the GaN material by regulating and controlling the growth temperature, the ammonia gas atmosphere and the flow of a Ga source, and lays a foundation for the efficient incorporation of Mg atoms in the third Mg atom adsorption layer. And the third Mg atom adsorption layer realizes the efficient incorporation of Mg atoms by regulating and controlling the growth temperature, the ammonia atmosphere and the flow of a Mg source by utilizing the surface effect. The problems of difficult ionization and low ionization rate of the acceptor impurity Mg atoms are solved under the comprehensive action of the three-layer structure.
S9, preparing a source electrode 10 and a drain electrode 9 on the surface of the GaN capping layer 7, and preparing a grid electrode 11 on the surface of the P-type composite layer 8.
Correspondingly, the invention also provides electronic equipment which comprises the P-type gate enhanced GaN-based power device.
The preparation process is completed by adopting MOCVD equipment, CVD equipment or PVD equipment, high-purity ammonia gas is used as a nitrogen source, trimethyl gallium or triethyl gallium is used as a gallium source, trimethyl aluminum is used as an aluminum source, silane is used as an N-type dopant, dicyclopentadienyl magnesium is used as a P-type dopant, ferrocene is used as a GaN pressure-resistant layer 3 dopant, and high-purity hydrogen and/or high-purity nitrogen is used as a carrier gas. The deposition apparatus and the raw material are not particularly limited.
The invention is further illustrated by the following specific examples:
example 1
The embodiment provides a P-type gate enhanced GaN-based power device, which comprises a substrate, and a buffer layer, a GaN pressure-resistant layer, a GaN channel layer, an AlN insertion layer, an AlGaN barrier layer and a GaN cap layer which are sequentially stacked on the substrate, wherein the surface of the GaN cap layer is provided with a source electrode, a drain electrode and a grid electrode growing on the surface of the P-type composite layer;
the P-type composite layer comprises 10 periods of first Mg atom diffusion blocking layers, second Ga atom desorption layers and third Mg atom adsorption layers which are alternately stacked and grown in sequence.
The preparation method of the P-type gate enhanced GaN-based power device comprises the following steps:
preparing a substrate;
depositing a buffer layer, a GaN voltage-resisting layer, a GaN channel layer, an AlN insert layer, an AlGaN barrier layer and a GaN cap layer on the substrate in sequence;
preparing a source electrode and a drain electrode on the surface of the GaN capping layer, depositing a P-type composite layer on the surface of the GaN capping layer, and preparing a grid electrode on the surface of the P-type composite layer;
depositing a P-type composite layer on the GaN cap layer, wherein the method comprises the following steps:
and sequentially and alternately stacking and growing a first Mg atom diffusion blocking layer, a second Ga atom desorption layer and a third Mg atom adsorption layer for 10 periods on the surface of the GaN cap layer.
The first Mg atom diffusion blocking layer grows and deposits by adopting the following method:
controlling the growth temperature of the reaction cavity to be 1000 ℃, introducing a gallium source, a nitrogen source and a magnesium source, wherein the introduction amount of the nitrogen source is 40slm, and performing surface diffusion on gallium atoms and nitrogen atoms to form the first Mg atom diffusion blocking layer.
The second Ga atom desorption layer grows and precipitates by adopting the following method:
controlling the growth temperature of the reaction chamber to be 1200 ℃, introducing a gallium source and a nitrogen source, gradually reducing the flow of the gallium source to be closed at a speed of reducing 50% per minute, and introducing the nitrogen source at 40slm to form the second Ga atom desorption layer.
The third Mg atom adsorption layer grows and precipitates by adopting the following method:
controlling the growth temperature of the reaction cavity to 700 ℃, introducing a magnesium source and a nitrogen source, wherein the introduction amount of the nitrogen source is 40slm, and performing surface diffusion on magnesium atoms to form the third Mg atom adsorption layer.
Example 2
The embodiment provides a P-type gate enhanced GaN-based power device, which comprises a substrate, and a buffer layer, a GaN pressure-resistant layer, a GaN channel layer, an AlN insertion layer, an AlGaN barrier layer and a GaN cap layer which are sequentially stacked on the substrate, wherein the surface of the GaN cap layer is provided with a source electrode, a drain electrode and a grid electrode growing on the surface of the P-type composite layer;
the P-type composite layer comprises a first Mg atom diffusion blocking layer, a second Ga atom desorption layer and a third Mg atom adsorption layer which are sequentially and alternately stacked and grown for 2 periods.
The preparation method of the P-type gate enhanced GaN-based power device comprises the following steps:
preparing a substrate;
depositing a buffer layer, a GaN voltage-withstanding layer, a GaN channel layer, an AlN insert layer, an AlGaN barrier layer and a GaN cap layer on the substrate in sequence;
preparing a source electrode and a drain electrode on the surface of the GaN cap layer, depositing a P-type composite layer on the surface of the GaN cap layer, and preparing a grid electrode on the surface of the P-type composite layer;
depositing a P-type composite layer on the GaN cap layer, wherein the method comprises the following steps:
and sequentially and alternately stacking and growing a first Mg atom diffusion blocking layer, a second Ga atom desorption layer and a third Mg atom adsorption layer for 2 periods on the surface of the GaN capping layer.
The first Mg atom diffusion blocking layer grows and deposits by adopting the following method:
controlling the growth temperature of the reaction cavity to be 800 ℃, introducing a gallium source, a nitrogen source and a magnesium source, wherein the introduction amount of the nitrogen source is 35slm, and performing surface diffusion on gallium atoms and nitrogen atoms to form the first Mg atom diffusion blocking layer.
The second Ga atom desorption layer grows and precipitates by adopting the following method:
controlling the growth temperature of the reaction chamber to be 1100 ℃, introducing a gallium source and a nitrogen source, gradually reducing the flow of the gallium source to be closed at a speed of reducing 50% per minute, and introducing 35slm of the nitrogen source to form the second Ga atom desorption layer.
The third Mg atom adsorption layer grows and precipitates by adopting the following method:
controlling the growth temperature of the reaction cavity to be 750 ℃, introducing a magnesium source and a nitrogen source, wherein the introduction amount of the nitrogen source is 35slm, and performing surface diffusion on magnesium atoms to form the third Mg atom adsorption layer.
Example 3
The embodiment provides a P-type gate enhanced GaN-based power device, which comprises a substrate, and a buffer layer, a GaN voltage-withstanding layer, a GaN channel layer, an AlN insert layer, an AlGaN barrier layer and a GaN cap layer which are sequentially stacked on the substrate, wherein a source electrode, a drain electrode and a grid electrode growing on the surface of the P-type composite layer are arranged on the surface of the GaN cap layer;
the P-type composite layer comprises a first Mg atom diffusion blocking layer, a second Ga atom desorption layer and a third Mg atom adsorption layer which are sequentially and alternately stacked and grown for 20 periods.
The preparation method of the P-type gate enhanced GaN-based power device comprises the following steps:
preparing a substrate;
depositing a buffer layer, a GaN voltage-resisting layer, a GaN channel layer, an AlN insert layer, an AlGaN barrier layer and a GaN cap layer on the substrate in sequence;
preparing a source electrode and a drain electrode on the surface of the GaN cap layer, depositing a P-type composite layer on the surface of the GaN cap layer, and preparing a grid electrode on the surface of the P-type composite layer;
depositing a P-type composite layer on the GaN cap layer, wherein the method comprises the following steps:
and sequentially and alternately stacking and growing a first Mg atom diffusion blocking layer, a second Ga atom desorption layer and a third Mg atom adsorption layer for 20 periods on the surface of the GaN capping layer.
The first Mg atom diffusion blocking layer grows and deposits by adopting the following method:
controlling the growth temperature of the reaction cavity to be 1100 ℃, introducing a gallium source, a nitrogen source and a magnesium source, wherein the introduction amount of the nitrogen source is 50slm, and performing surface diffusion on gallium atoms and nitrogen atoms to form the first Mg atom diffusion blocking layer.
The second Ga atom desorption layer grows and precipitates by adopting the following method:
controlling the growth temperature of the reaction chamber to 1400 ℃, introducing a gallium source and a nitrogen source, gradually reducing the flow of the gallium source to be closed at a speed of reducing 50% per minute, and introducing the nitrogen source at 50slm to form the second Ga atom desorption layer.
The third Mg atom adsorption layer grows and precipitates by adopting the following method:
controlling the growth temperature of the reaction cavity at 800 ℃, introducing a magnesium source and a nitrogen source, wherein the introduction amount of the nitrogen source is 50slm, and performing surface diffusion on magnesium atoms to form the third Mg atom adsorption layer.
Comparative example 1
The present comparative example provides a P-type gate-enhanced GaN-based power device, which is different from example 1 in that: the first Mg atom diffusion barrier layer was not provided in the P-type composite layer, and the rest was the same as in example 1.
Comparative example 2
The present comparative example provides a P-type gate-enhanced GaN-based power device, which is different from example 1 in that: the second Ga atom-desorbing layer was not provided in the P-type composite layer, and the rest was the same as in example 1.
Comparative example 3
The present comparative example provides a P-type gate-enhanced GaN-based power device, which is different from example 1 in that: the third Mg atom-adsorbing layer was not provided in the P-type composite layer, and the rest was the same as in example 1.
The P-type gate-enhanced GaN-based power devices prepared in examples 1 to 3 and comparative examples 1 to 3 were tested for the following sheet resistance uniformity and DS leakage.
Table 1 shows the results of the sheet resistance uniformity test of P-type gate enhanced GaN-based power devices prepared in examples 1-3 and comparative examples 1-3
The sheet resistances of examples 1 and 3 are both around 280 Ω, and the sheet resistance of example 3 is much smaller than that of the comparative example around 330 Ω. And the in-chip uniformity of each example was also much higher than that of the comparative example.
Table 2 shows the results of the DS leakage test of the P-type gate enhanced GaN-based power devices obtained in examples 1-3 and comparative examples 1-3
Table 2 shows the result of the test that DS leakage of the 72mm device results in no breakdown characteristic, and the breakdown voltage of the small device of each embodiment is normal. And the threshold voltage is more negative for the wafer with small square resistance. Whereas in the comparative example a field with a threshold voltage of-5, -6V is present.
Table 3 shows the results of the large device yield test of the P-type gate enhanced GaN-based power devices obtained in examples 1-3 and comparative examples 1-3
The breakdown voltage yield of each comparative example was low, even the breakdown voltage yield of comparative example 1 was close to 0, mainly due to gate breakdown voltage anomaly.
According to the result, the first Mg atom diffusion blocking layer of the P-type gate enhanced GaN-based power device prepared by the invention can effectively block Mg atoms in the third Mg atom adsorption layer from diffusing to the AlGaN barrier layer and the GaN channel layer, so that the formation of a carrier trap and a leakage channel is reduced, and the performance and the reliability of the HEMT device are improved. The second Ga atom desorption layer accurately regulates and controls the desorption rate of Ga atoms of the GaN material, and lays a cushion for the efficient incorporation of Mg atoms in the third Mg atom adsorption layer. And the third Mg atom adsorption layer efficiently incorporates Mg atoms into a GaN material on the basis of the second Ga atom desorption layer by utilizing a surface effect, and finally, the high-quality P-type GaN semiconductor layer with a flat surface and high hole concentration is obtained. The problems of difficult ionization and low ionization rate of the acceptor impurity Mg atoms are finally solved under the interaction of the sublayers of the P-type composite layer.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (10)
1. A P-type grid enhancement type GaN-based power device is characterized by comprising a substrate, and a buffer layer, a GaN pressure-resistant layer, a GaN channel layer, an AlN insertion layer, an AlGaN barrier layer and a GaN cap layer which are sequentially stacked on the substrate, wherein a source electrode, a drain electrode and a grid electrode growing on the surface of the P-type composite layer are arranged on the surface of the GaN cap layer;
the P-type composite layer comprises a plurality of first Mg atom diffusion blocking layers, second Ga atom desorption layers and third Mg atom adsorption layers which are periodically and alternately stacked and grown in sequence.
2. The P-type gate-enhanced GaN-based power device of claim 1, wherein the number of cycle periods of the first Mg atom diffusion blocking layer, the second Ga atom desorbing layer and the third Mg atom adsorbing layer is 2 to 20.
3. The P-type gate-enhanced GaN-based power device of claim 1, wherein the thickness of the P-type composite layer is 10nm to 200nm.
4. The P-type gate-enhanced GaN-based power device of claim 1, wherein in the P-type composite layer, the thickness of the first Mg atom diffusion blocking layer is 70-80%, the thickness of the second Ga atom desorption layer is 10-20%, and the thickness of the third Mg atom adsorption layer is 1-20%.
5. The P-type gate-enhanced GaN-based power device of claim 1, wherein the P-type composite layer has a Mg doping concentration of 1 x 10 20 atoms/cm 3 -1×10 21 atoms/cm 3 。
6. A method for preparing a P-type gate enhanced GaN-based power device as claimed in any of claims 1-5, comprising the steps of:
preparing a substrate;
depositing a buffer layer, a GaN voltage-resisting layer, a GaN channel layer, an AlN insert layer, an AlGaN barrier layer and a GaN cap layer on the substrate in sequence;
preparing a source electrode and a drain electrode on the surface of the GaN cap layer, depositing a P-type composite layer on the surface of the GaN cap layer, and preparing a grid electrode on the surface of the P-type composite layer;
the P-type composite layer comprises a plurality of first Mg atom diffusion blocking layers, second Ga atom desorption layers and third Mg atom adsorption layers which are periodically and alternately stacked and grown in sequence.
7. The method for manufacturing a P-type gate-enhanced GaN-based power device according to claim 6, wherein the first Mg atom diffusion blocking layer is deposited by the following method:
controlling the growth temperature of the reaction cavity to be 800-1100 ℃, introducing a gallium source, a nitrogen source and a magnesium source, and performing surface diffusion on gallium atoms and nitrogen atoms to form the first Mg atom diffusion blocking layer.
8. The method for manufacturing a P-type gate-enhanced GaN-based power device according to claim 6, wherein the second Ga atom desorption layer is deposited by growing the second Ga atom desorption layer by:
and controlling the growth temperature of the reaction cavity to be 1100-1400 ℃, introducing a gallium source and a nitrogen source, and gradually reducing the introduction amount of the gallium source to be closed to form the second Ga atom desorption layer.
9. The method for manufacturing a P-type gate-enhanced GaN-based power device according to claim 6, wherein the third Mg atom adsorption layer is deposited by growing the third Mg atom adsorption layer by the following method:
controlling the growth temperature of the reaction cavity to be 500-800 ℃, introducing a magnesium source and a nitrogen source, and performing surface diffusion on magnesium atoms to form the third Mg atom adsorption layer.
10. An electronic device comprising the P-type gate-enhanced GaN-based power device of any of claims 1-5.
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