CN115774027A - Continuous scanning control system and detection method for semiconductor detection equipment - Google Patents
Continuous scanning control system and detection method for semiconductor detection equipment Download PDFInfo
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Abstract
The invention relates to the field of semiconductor detection equipment, in particular to a continuous scanning control system and a detection method of semiconductor detection equipment, which comprises a user side for sending a coordinate sequence to a motion platform control unit; the motion platform control unit is used for controlling the position and the speed of the motion platform and is also used for transmitting a sampling start signal and a sampling stop signal to the scanning sampling unit; a motion stage for bearing the wafer to be tested; the laser ranging unit is used for ranging the motion platform and feeding back the measured position information of the motion platform to the motion platform control unit; the scanning and sampling unit is used for carrying out scanning and sampling and transmitting the single-frame image to the image end, and the scanning and sampling unit is also electrically connected with at least one deflector; the invention transfers the original path calculation synchronization, motion synchronization, scanning synchronization and image acquisition synchronization to the motion platform control unit and the scanning sampling unit for respectively bearing, thereby greatly improving the frequency response performance of system coordination.
Description
Technical Field
The invention relates to the field of semiconductor detection equipment, in particular to a continuous scanning control system and a detection method for semiconductor detection equipment.
Background
In the semiconductor manufacturing process, the yield of the product is easily reduced due to defects in the process or materials, and then the defect detection is performed by using detection equipment such as a scanning electron microscope to improve the yield of the semiconductor chip.
At present, in the field of semiconductor detection equipment, the method can be divided into a progressive type and a continuous type according to the matching mode between an electron beam and a motion platform, wherein the progressive type scanning detection mode has low detection efficiency, and the continuous type scanning detection equipment mostly carries out unified central coordination on path calculation synchronization, motion synchronization, scanning synchronization and image acquisition synchronization through Real-time PC.
For example, patent application publication No. CN115078392A discloses a semiconductor chip defect detection apparatus and method, wherein a line scan image sensor, a display, a camera and a servo motor are all connected to a computer, i.e. the computer collects signals uniformly for coordination, such a manner is still easy to interrupt or delay in synchronization, calculation and triggering of multiple data, and the coordination performance of the system is low.
Disclosure of Invention
The invention aims to provide a continuous scanning control system and a continuous scanning control method for semiconductor detection equipment, which save Real-time PC, and greatly improve the frequency response performance of system coordination by putting the original path calculation synchronization, motion synchronization, scanning synchronization and image acquisition synchronization transfer on a motion platform control unit and a scanning sampling unit for respectively bearing.
In order to achieve the purpose, the invention provides the following technical scheme:
in a first aspect, the present invention provides a continuous scanning control system for a semiconductor inspection apparatus, comprising:
the user side is used for generating a detection coordinate sequence according to the user specific detection requirement and transmitting a coordinate sequence result to the motion platform control unit;
the motion platform control unit is used for controlling the position and the speed of the motion platform according to a given coordinate sequence and transmitting a sampling start signal and a sampling stop signal to the scanning and sampling unit;
the motion platform is used for bearing a wafer to be tested;
the laser ranging unit is used for carrying out X-direction ranging and Y-direction ranging on the motion platform and feeding back the measured position information of the motion platform to the motion platform control unit;
and the scanning and sampling unit is used for scanning and sampling according to a sampling start signal and a sampling stop signal given by the motion platform control unit and transmitting the single-frame image to the image end, and the scanning and sampling unit is also electrically connected with at least one deflector.
Preferably, the laser ranging unit can transmit the measured position information of the motion platform to the motion platform control unit in a 1VPP analog signal mode; the laser ranging unit may also transmit the measured motion stage position information to the motion platform control unit digitally (e.g., HSSL or AquadB) over a high speed digital bus interface.
In a second aspect, the present invention provides a continuous scanning detection method for a semiconductor detection device, including the following steps:
s1, inputting the overall requirements of a user scanning system by a user side;
s2, based on the step S1, decomposing the input requirement into a detection coordinate sequence in a head-tail form by the user side, and issuing the coordinate sequence to the motion platform control unit;
s3, based on the step S2, the motion platform control unit controls the position and the speed of the motion platform according to a given coordinate sequence;
s4, based on the step S3, the motion platform control unit sends a sampling start signal and a sampling stop signal to the scanning sampling unit and controls the motion platform to cooperate with the scanning sampling unit to perform image sampling;
and S5, based on the step S4, the scanning and sampling unit performs scanning and sampling according to the sampling start signal and the sampling stop signal and transmits the frame image stream to the image end.
Further, the specific steps of step S3 are:
s31, the motion platform control unit plans a path according to a coordinate interval in a given coordinate sequence and determines a motion track;
and S32, based on the step S31, speed control is carried out between adjacent coordinate intervals and in a single coordinate interval in an acceleration-deceleration-uniform-speed-acceleration-deceleration mode, the speed control mode can be sequentially changed or combined according to actual needs, and the next sampling area can be quickly reached, wherein the starting point of the uniform speed process is a sampling start signal trigger point, and the ending point of the uniform speed process is a sampling stop signal trigger point.
Further, the specific steps of the motion platform control unit controlling the motion platform to cooperate with the scanning sampling unit to perform image sampling in step S4 are as follows:
s41, extracting coordinate starting points from the coordinate sequence in sequence by the motion platform control unit;
s42, based on the step S41, the motion platform control unit drives the motion platform to move to the initial coordinate position of sampling;
s43, based on the step S42, the motion platform control unit issues a sampling start signal to the scanning sampling unit;
s44, based on the step S43, the motion platform control unit drives the motion platform to move at a constant speed according to the required speed until the motion platform moves to the tail coordinate position of the sampling end;
s45, based on the step S44, the motion platform control unit issues a sampling stop signal to the scanning sampling unit, and the step S41 is returned.
Further, in step S5, the specific steps of the scan sampling unit performing scan sampling are as follows:
s51, the scanning and sampling unit waits for triggering a sampling start signal, and if the sampling start signal is triggered, the step S52 is executed;
s52, the scanning and sampling unit receives a sampling start signal, and if the sampling start signal is not received, the step S51 is returned;
s53, based on the step S52, the scanning and sampling unit generates DA scanning signals of lines and frames required by the deflector, AD sampling is started synchronously, and lines and frames of a sampling channel are synchronous to the DA scanning signals;
s54, based on the step S53, the scanning and sampling unit carries out AD sampling receiving according to rows and frames and transfers AD data to an image group in real time and transmits the image group back to the image end until a sampling stop signal is received;
and S55, based on the step S54, stopping sampling after the scanning and sampling unit receives the sampling stop signal, and returning to the step S51.
Preferably, the method further comprises the following steps:
s71, defining a coordinate axis of a motion table as an X-Y coordinate axis, defining an X-Y polar plate space arrangement direction of any deflector as an orthogonal X1-Y1 coordinate axis, defining the coordinate axis of a wafer to be measured as an L-F coordinate axis according to an orthographic view direction of the wafer to be measured in a overlooking mode, and taking the L-F coordinate axis as a reference for line and frame signals required in actual image scanning;
s72, defining an included angle between an X1-Y1 coordinate axis and an L-F coordinate axis as theta, defining an included angle between the L-F coordinate axis and an X-Y coordinate axis as alpha, and defining an included angle between the X1-Y1 coordinate axis and an X-Y coordinate axis as beta, so that beta = alpha + theta can be obtained;
s73, feeding back the measured position information of the motion platform to a motion platform control unit by a laser ranging unit, wherein the installation of the laser ranging unit needs to be matched with a coordinate definition item of the motion platform;
s74, the motion platform control unit calculates to obtain difference values of the current required target given coordinate and the actual feedback position of the motion platform in the X direction and the Y direction, wherein the difference values are respectively delta X and delta Y;
s75, the motion platform control unit controls the scanning sampling unit to adopt scanning electron beam dynamic compensation according to the position difference value information delta X and delta Y, and scanning image distortion caused by vibration errors of the motion platform can be compensated by overlapping the scanning electron beam deflection signals with the scanning electron beam dynamic compensation.
Preferably, the method for performing scanning electron beam dynamic compensation comprises the following steps:
s81, the motion platform control unit transmits the position difference value information delta X and delta Y to a scanning sampling unit, and the scanning sampling unit performs coordinate conversion and proportional control to obtain deflection voltage required to be compensated on a deflector;
s82, based on the step S81, outputting deflection voltage needing to be compensated on the deflector to a deflector polar plate after being superposed with an analog signal output by the deflector through an adder;
in the method, coordinate conversion and proportion control are directly carried out in the scanning sampling unit, the scaling processing of small disturbance signals is reduced as much as possible, effective precision is kept, the method is flexible, but the calculation amount is large, the upper limit of compensation bandwidth can be influenced, and the dynamic compensation method is also suitable for progressive semiconductor detection equipment.
Preferably, the method for performing scanning electron beam dynamic compensation may further include:
s91, the motion platform control unit outputs the difference value delta X and the difference value delta Y to the scanning sampling unit in a digital quantity output mode;
s92, based on the step S91, converting the difference values delta X and delta Y into DA analog quantity by the scanning sampling unit after proportional operation, and outputting the DA analog quantity to any deflector;
s93, based on the step S92, adding a path of simulation design in parallel to the deflector to complete coordinate conversion and proportional control, and obtaining deflection voltage required to be compensated on the deflector;
s94, based on the step S93, outputting the deflection voltage to be compensated on the deflector to a deflector polar plate after being superposed with the analog signal output by the deflector through an adder;
in the method, the calculation and superposition of coordinate conversion and proportional control are directly completed by the simulation part, the compensation operation bandwidth can be designed to be high enough, but the defect topological structure and parameters of the method are relatively fixed, the flexibility is insufficient, and the dynamic compensation method is also suitable for progressive semiconductor detection equipment.
Further, a specific method for obtaining the deflection voltage required to be compensated on the deflector by performing coordinate conversion and proportional control is as follows:
s101, the coordinate error value of the coordinate axis converted from the X-Y coordinate axis to the L-F coordinate axis is as follows:
DL=ΔX*cosα+ΔY*sinα
DF=ΔY*cosα-ΔX*sinα
wherein DL is a coordinate error value in the L-F coordinate axis L direction, and DF is a coordinate error value in the L-F coordinate axis F direction;
s102, obtaining a voltage value to be compensated under an L-F coordinate axis according to the coordinate error value in the L-F direction, wherein the voltage value to be compensated under the L-F coordinate axis is as follows:
ΔVL=DL*G1
ΔVF=DF*G2
wherein, Δ VL is a voltage value required to be compensated in the direction of L-F coordinate axis L, Δ VF is a voltage value required to be compensated in the direction of F coordinate axis L-F, and G1 and G2 are proportionality coefficients representing the relationship between displacement and deflection voltage values;
s103, obtaining a deflection voltage value required to be compensated on the deflector in the X1-Y1 coordinate axis according to the voltage value required to be compensated in the L-F coordinate axis, wherein the deflection voltage value required to be compensated on the deflector in the X1-Y1 coordinate axis is as follows:
ΔVX1=ΔVL*cosθ+ΔVF*sinθ
ΔVY1=ΔVF*cosθ-ΔVL*sinθ
wherein Δ VX1 is a deflection voltage value required for the deflector to compensate in the X1-Y1 coordinate axis direction X1, and Δ VY1 is a deflection voltage value required for the deflector to compensate in the Y1 coordinate axis direction X1-Y1.
The beneficial effects of the invention are:
1) Real-time PCs are saved, original path calculation synchronization, motion synchronization, scanning synchronization and image acquisition synchronization transfer are put on the motion platform control unit and the scanning sampling unit respectively for carrying, and the frequency response performance of system coordination is greatly improved.
2) The path calculation is placed in a motion platform control unit, a user side issues all key starting point coordinate sequences required in single detection, the motion platform control unit controls motion tracks and motion speed according to coordinate points and sends sampling start signals to a scanning sampling unit at sampling points, and therefore the whole system can run continuously without interruption or delay of unnecessary synchronization, calculation, triggering and other modes.
3) The position disturbance signal of the motion platform is derived through the motion platform control unit, is directly output to the deflector through the scanning sampling unit in a reverse compensation and superposition mode, and the micro disturbance of the motion platform is tracked through the synchronous change of the electron beams, so that a good dynamic compensation effect is obtained.
4) Two different dynamic compensation modes of scanning electron beams are provided, the dynamic compensation mode can be selected for use according to the disturbance size, the flexible specific processing requirement and the cost consideration, but no matter what dynamic compensation mode of scanning electron beams is adopted, the hardware delay is within 1us, the rapid tracking and correction can be achieved, and compared with the control period delay of ms level when position signals pass through Real-time PC, the frequency response performance of system position tracking is greatly improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic diagram of the general structure of the system module of the present invention;
FIG. 2 is a diagram of the overall steps of the continuous scan inspection method of the present invention;
FIG. 3 is a schematic diagram of a method for controlling a motion stage according to a sequence of coordinate points by a motion platform control unit according to the present invention;
FIG. 4 is a diagram of the steps of image sampling of the present invention;
FIG. 5 is a flow chart of a scan sampling process according to the present invention;
FIG. 6 is a schematic diagram of the scanning electron beam dynamic compensation control of the present invention;
FIG. 7 is a schematic diagram of the relationship between the motion stage and the coordinate positions of the component to be measured and its deflector according to the present invention;
FIG. 8 is a schematic diagram of a scanning electron beam dynamic compensation method according to the present invention.
Detailed Description
Example 1
As shown in fig. 1, the present invention provides a continuous scanning control system for a semiconductor inspection apparatus, comprising:
and the user side is used for generating a detection coordinate sequence according to the user specific detection requirement and transmitting the coordinate sequence result to the motion platform control unit.
And the motion platform control unit is used for controlling the position and the speed of the motion platform according to a given coordinate sequence, and is also used for transmitting a sampling start signal and a sampling stop signal to the scanning and sampling unit.
And the motion platform is used for bearing the wafer to be tested.
The laser ranging unit is used for performing X-direction ranging and Y-direction ranging on the motion platform and feeding back the measured position information of the motion platform to the motion platform control unit; the laser ranging unit can transmit the measured position information of the motion platform to the motion platform control unit in a 1VPP analog signal mode; the laser ranging unit may also transmit the measured motion stage position information to the motion platform control unit via a high speed digital bus interface, such as HSSL or AquadB digital.
And the scanning and sampling unit is used for scanning and sampling according to a sampling start signal and a sampling stop signal given by the motion platform control unit and transmitting the single-frame image to the image end, and is also electrically connected with at least one deflector and adopts a design scheme of an FPGA.
Example 2
As shown in fig. 2, the present invention provides a continuous scanning detection method for a semiconductor detection device, comprising the following steps:
s1, a user side inputs the overall requirements of a user scanning system.
S2, based on the step S1, the user side decomposes the input requirements into a detection coordinate sequence in a head-tail form, and sends the coordinate sequence to the motion platform control unit.
S3, based on the step S2, the motion platform control unit controls the position and the speed of the motion platform according to a given coordinate sequence;
the specific method of step S3 is shown in fig. 3:
the motion platform control unit performs path planning according to a coordinate interval in a given coordinate sequence, determines a motion track, generates n +1 separated wafer areas needing to be detected by taking an X-Y coordinate axis of a motion platform as a reference, and forms the wafer areas by two groups of coordinate point sequences of the opposite angle of a single separated wafer;
and speed control is carried out between adjacent coordinate intervals and in a single coordinate interval in a mode of acceleration, deceleration, uniform speed, acceleration, deceleration and deceleration, the speed control mode can be sequentially changed or combined according to actual needs, and the next sampling area can be quickly reached, wherein the starting point of the uniform speed process is a sampling start signal trigger point, and the ending point of the uniform speed process is a sampling stop signal trigger point.
S4, based on the step S3, the motion platform control unit sends a sampling start signal and a sampling stop signal to the scanning sampling unit and controls the motion platform to cooperate with the scanning sampling unit to sample images;
the specific method of step S4 is shown in fig. 4:
s41, extracting coordinate starting points from the coordinate sequence in sequence by the motion platform control unit;
s42, based on the step S41, the motion platform control unit drives the motion platform to move to the initial coordinate position of sampling;
s43, based on the step S42, the motion platform control unit issues a sampling start signal to the scanning sampling unit;
s44, based on the step S43, the motion platform control unit drives the motion platform to move at a constant speed according to the required speed until the motion platform moves to the tail coordinate position of the sampling end;
s45, based on the step S44, the motion platform control unit issues a sampling stop signal to the scanning sampling unit, and the step S41 is returned.
S5, based on the step S4, the scanning and sampling unit carries out scanning and sampling according to the sampling start signal and the sampling stop signal and transmits the frame image stream to the image end;
the step flow of step S5 is shown in fig. 5:
s51, the scanning and sampling unit waits for triggering a sampling start signal, and if the sampling start signal is triggered, the step S52 is executed;
s52, the scanning and sampling unit receives a sampling start signal, and returns to the step S51 if the sampling start signal is not received;
s53, based on the step S52, the scanning and sampling unit generates DA scanning signals of lines and frames required by the deflector, AD sampling is started synchronously, and lines and frames of a sampling channel are synchronous to the DA scanning signals;
s54, based on the step S53, the scanning and sampling unit carries out AD sampling receiving according to rows and frames and transfers AD data to an image group in real time and transmits the image group back to the image end until a sampling stop signal is received;
and S55, based on the step S54, stopping sampling after the scanning and sampling unit receives the sampling stop signal, and returning to the step S51.
Example 3
On the basis of embodiment 2, the invention provides a continuous scanning detection method for a semiconductor detection device, which further comprises the following steps:
s71, as shown in FIG. 7, defining a coordinate axis of the motion table as an X-Y coordinate axis, defining an X1-Y1 coordinate axis in which the X-Y polar plate spatial arrangement direction of any deflector is orthogonal, defining the coordinate axis as an L-F coordinate axis according to the front view direction of the wafer to be measured in the overlooking direction, and taking the L-F coordinate axis as a reference for line and frame signals required in actual image scanning.
S72, defining an included angle between the X1-Y1 coordinate axis and the L-F coordinate axis as theta, defining an included angle between the L-F coordinate axis and the X-Y coordinate axis as alpha, and defining an included angle between the X1-Y1 coordinate axis and the X-Y coordinate axis as beta, so that beta = alpha + theta can be obtained.
And S73, feeding back the measured position information of the motion platform to a motion platform control unit by the laser ranging unit, wherein the installation of the laser ranging unit needs to be matched with a coordinate definition item of the motion platform.
And S74, as shown in FIG. 6, the motion platform control unit calculates to obtain the difference values between the current required target given coordinate and the actual feedback position of the motion platform in the X and Y directions as Δ X and Δ Y respectively.
S75, as shown in FIG. 6, the motion platform control unit controls the scanning sampling unit to adopt scanning electron beam dynamic compensation according to the position difference information delta X and delta Y, and scanning image distortion caused by motion errors of the motion platform can be compensated by overlapping the scanning electron beam deflection signals with the scanning electron beam dynamic compensation.
The method for performing scanning electron beam dynamic compensation is shown in fig. 8:
and S81, the motion platform control unit transmits the position difference value information delta X and delta Y to the scanning sampling unit, and the scanning sampling unit performs coordinate conversion and proportional control to obtain deflection voltage required to be compensated on the deflector.
S82, based on the step S81, the deflection voltage required to be compensated on the deflector is superposed with the analog signal output by the deflector through the adder and then output to the polar plate of the deflector.
In the method, coordinate conversion and proportion control are directly carried out in the scanning sampling unit, the scaling processing of small disturbance signals is reduced as much as possible, effective precision is kept, the method is flexible, but the calculation amount is large, the upper limit of compensation bandwidth can be influenced, and the dynamic compensation method is also suitable for progressive semiconductor detection equipment.
The specific method for obtaining the deflection voltage required to be compensated on the deflector by carrying out coordinate conversion and proportional control comprises the following steps:
s101, the coordinate error value of the coordinate axis converted from the X-Y coordinate axis to the L-F coordinate axis is as follows:
DL=ΔX*cosα+ΔY*sinα
DF=ΔY*cosα-ΔX*sinα
wherein DL is a coordinate error value in the L-F coordinate axis L direction, and DF is a coordinate error value in the L-F coordinate axis F direction.
S102, obtaining a voltage value needing to be compensated under an L-F coordinate axis according to the coordinate error value in the L-F direction, wherein the voltage value is as follows:
ΔVL=DL*G1
ΔVF=DF*G2
wherein, Δ VL is the voltage value required to be compensated in the direction of L-F coordinate axis L, Δ VF is the voltage value required to be compensated in the direction of F coordinate axis L-F, and G1 and G2 are proportionality coefficients representing the relationship between displacement and deflection voltage values.
S103, obtaining deflection voltage values required to be compensated on the deflector in the X1-Y1 coordinate axis according to the voltage values required to be compensated in the L-F coordinate axis, wherein the deflection voltage values required to be compensated on the deflector in the X1-Y1 coordinate axis are as follows:
ΔVX1=ΔVL*cosθ+ΔVF*sinθ
ΔVY1=ΔVF*cosθ-ΔVL*sinθ
wherein Δ VX1 is a deflection voltage value required for the deflector to compensate in the X1-Y1 coordinate axis direction X1, and Δ VY1 is a deflection voltage value required for the deflector to compensate in the Y1 coordinate axis direction X1-Y1.
The other method steps of this example 3 are the same as those of example 2.
Example 4
On the basis of embodiment 2, the invention provides a continuous scanning detection method for a semiconductor detection device, which further comprises the following steps:
s71, as shown in FIG. 7, defining a coordinate axis of the motion table as an X-Y coordinate axis, defining an X1-Y1 coordinate axis in which the X-Y polar plate spatial arrangement direction of any deflector is orthogonal, defining the coordinate axis as an L-F coordinate axis according to the front view direction of the wafer to be measured in the overlooking direction, and taking the L-F coordinate axis as a reference for line and frame signals required in actual image scanning.
S72, defining an included angle between the X1-Y1 coordinate axis and the L-F coordinate axis as theta, defining an included angle between the L-F coordinate axis and the X-Y coordinate axis as alpha, and defining an included angle between the X1-Y1 coordinate axis and the X-Y coordinate axis as beta, then obtaining that the beta = alpha + theta.
And S73, the laser ranging unit feeds back the measured position information of the motion platform to the motion platform control unit, and the installation of the laser ranging unit needs to be matched with the coordinate definition item of the motion platform.
And S74, as shown in FIG. 6, the motion platform control unit calculates the difference between the position sequence given by the user end and the actual feedback position of the motion platform in the X and Y directions to be respectively Δ X and Δ Y.
S75, as shown in FIG. 6, the motion platform control unit controls the scanning sampling unit to adopt scanning electron beam dynamic compensation according to the position difference information delta X and delta Y, and scanning image distortion caused by motion errors of the motion platform can be compensated by overlapping the scanning electron beam deflection signals with the scanning electron beam dynamic compensation.
The method for performing scanning electron beam dynamic compensation is shown in fig. 8:
and S91, the motion platform control unit outputs the difference values delta X and delta Y to the scanning sampling unit in a digital quantity output mode.
And S92, based on the step S91, converting the difference values delta X and delta Y into DA analog quantity by the scanning sampling unit after proportional operation, and outputting the DA analog quantity to any deflector.
And S93, based on the step S92, adding a path of simulation design in parallel to the deflector to complete coordinate conversion and proportional control, and obtaining the deflection voltage required to be compensated on the deflector.
And S94, based on the step S93, outputting the deflection voltage required to be compensated on the deflector to the polar plate of the deflector after the deflection voltage is superposed with the analog signal output by the deflector through an adder.
In the method, the calculation and superposition of coordinate conversion and proportional control are directly completed by the simulation part, the compensation operation bandwidth can be designed to be high enough, but the defect topological structure and parameters of the method are relatively fixed, the flexibility is insufficient, and the dynamic compensation method is also suitable for progressive semiconductor detection equipment.
The specific method for obtaining the deflection voltage required to be compensated on the deflector by carrying out coordinate conversion and proportional control comprises the following steps:
s101, the coordinate error value of the coordinate axis converted from the X-Y coordinate axis to the L-F coordinate axis is as follows:
DL=ΔX*cosα+ΔY*sinα
DF=ΔY*cosα-ΔX*sinα
wherein DL is a coordinate error value in the L-F coordinate axis L direction, and DF is a coordinate error value in the L-F coordinate axis F direction.
S102, obtaining a voltage value to be compensated under an L-F coordinate axis according to the coordinate error value in the L-F direction, wherein the voltage value to be compensated under the L-F coordinate axis is as follows:
ΔVL=DL*G1
ΔVF=DF*G2
wherein, Δ VL is the voltage value required to be compensated in the L-F coordinate axis L direction, Δ VF is the voltage value required to be compensated in the L-F coordinate axis F direction, and G1 and G2 are proportionality coefficients representing the relationship between displacement and deflection voltage values.
S103, obtaining deflection voltage values required to be compensated on the deflector in the X1-Y1 coordinate axis according to the voltage values required to be compensated in the L-F coordinate axis, wherein the deflection voltage values required to be compensated on the deflector in the X1-Y1 coordinate axis are as follows:
ΔVX1=ΔVL*cosθ+ΔVF*sinθ
ΔVY1=ΔVF*cosθ-ΔVL*sinθ
wherein, Δ VX1 is the deflection voltage value required to be compensated by the deflector in the X1 direction of the X1-Y1 coordinate axis, and Δ VY1 is the deflection voltage value required to be compensated by the deflector in the Y1 direction of the X1-Y1 coordinate axis.
The other method steps of this example 4 are the same as those of example 2.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A semiconductor inspection apparatus continuous scan control system, comprising:
the user side is used for generating a detection coordinate sequence according to the user specific detection requirement and transmitting a coordinate sequence result to the motion platform control unit;
the motion platform control unit is used for controlling the position and the speed of the motion platform according to a given coordinate sequence and transmitting a sampling start signal and a sampling stop signal to the scanning and sampling unit;
the motion platform is used for bearing the wafer to be tested;
the laser ranging unit is used for carrying out X-direction ranging and Y-direction ranging on the motion platform and feeding back the measured position information of the motion platform to the motion platform control unit;
and the scanning and sampling unit is used for carrying out scanning and sampling according to a sampling start signal and a sampling stop signal given by the motion platform control unit and transmitting the single-frame image to the image end, and the scanning and sampling unit is also electrically connected with at least one deflector.
2. The continuous scanning control system of the semiconductor inspection equipment according to claim 1, wherein: the laser ranging unit can transmit the measured position information of the motion platform to the motion platform control unit in a 1VPP analog signal mode; the laser ranging unit can also transmit the measured position information of the moving platform to the moving platform control unit in a digital mode through a high-speed digital bus interface.
3. An inspection method for performing continuous scanning of a semiconductor inspection apparatus using the continuous scanning control system of the semiconductor inspection apparatus as claimed in claims 1 to 2, comprising the steps of:
s1, a user side inputs the overall requirements of a user scanning system;
s2, based on the step S1, decomposing the input requirements into a detection coordinate sequence in a head-tail form by the user side, and sending the coordinate sequence to the motion platform control unit;
s3, based on the step S2, the motion platform control unit controls the position and the speed of the motion platform according to a given coordinate sequence;
s4, based on the step S3, the motion platform control unit sends a sampling start signal and a sampling stop signal to the scanning sampling unit and controls the motion platform to cooperate with the scanning sampling unit to sample images;
and S5, based on the step S4, the scanning and sampling unit performs scanning and sampling according to the sampling start signal and the sampling stop signal and transmits the frame image stream to the image end.
4. The continuous scanning detection method for the semiconductor detection device according to claim 3, wherein the specific steps in step S3 are as follows:
s31, the motion platform control unit performs path planning according to a coordinate interval in a given coordinate sequence to determine a motion track;
and S32, based on the step S31, speed control is carried out between adjacent coordinate intervals and in a single coordinate interval in an acceleration-deceleration-uniform-speed-acceleration-deceleration mode, wherein the starting point of the uniform speed process is a sampling start signal trigger point, and the ending point of the uniform speed process is a sampling stop signal trigger point.
5. The continuous scanning detection method for the semiconductor detection device according to claim 3, wherein the specific steps of controlling the motion stage to cooperate with the scanning sampling unit to perform image sampling by the motion stage control unit in step S4 are as follows:
s41, extracting coordinate starting points from the coordinate sequence in sequence by the motion platform control unit;
s42, based on the step S41, the motion platform control unit drives the motion platform to move to the initial coordinate position of sampling;
s43, based on the step S42, the motion platform control unit issues a sampling start signal to the scanning sampling unit;
s44, based on the step S43, the motion platform control unit drives the motion platform to move at a constant speed according to the required speed until the motion platform moves to the tail coordinate position of the sampling end;
s45, based on the step S44, the motion platform control unit issues a sampling stop signal to the scanning sampling unit, and the step S41 is returned.
6. The continuous scanning detection method for semiconductor detection equipment according to claim 3, wherein in step S5, the scanning sampling unit performs scanning sampling specifically as follows:
s51, the scanning and sampling unit waits for triggering a sampling start signal, and if the sampling start signal is triggered, the step S52 is executed;
s52, the scanning and sampling unit receives a sampling start signal, and returns to the step S51 if the sampling start signal is not received;
s53, based on the step S52, the scanning and sampling unit generates DA scanning signals of lines and frames required by the deflector, AD sampling is started synchronously, and lines and frames of a sampling channel are synchronous to the DA scanning signals;
s54, based on the step S53, the scanning and sampling unit carries out AD sampling receiving according to rows and frames and transfers AD data to an image group in real time and transmits the image group back to the image end until a sampling stop signal is received;
and S55, based on the step S54, stopping sampling after the scanning and sampling unit receives the sampling stop signal, and returning to the step S51.
7. The continuous scanning detection method for semiconductor detection equipment according to claim 3, further comprising the steps of:
s71, defining a coordinate axis of the motion platform as an X-Y coordinate axis, defining an X1-Y1 coordinate axis with the X-Y polar plate spatial arrangement direction of any deflector as an orthogonal coordinate axis, and defining the coordinate axis as an L-F coordinate axis according to the front view direction of the wafer to be measured in the overlook direction;
s72, defining an included angle between an X1-Y1 coordinate axis and an L-F coordinate axis as theta, defining an included angle between the L-F coordinate axis and an X-Y coordinate axis as alpha, and defining an included angle between the X1-Y1 coordinate axis and an X-Y coordinate axis as beta, so that beta = alpha + theta can be obtained;
s73, the laser ranging unit feeds back the measured position information of the motion platform to the motion platform control unit;
s74, the motion platform control unit calculates to obtain difference values delta X and delta Y between the current required target given coordinate and the actual feedback position of the motion platform in the X direction and the Y direction respectively;
and S75, the motion platform control unit controls the scanning sampling unit to adopt scanning electron beam dynamic compensation according to the position difference value information delta X and delta Y.
8. The continuous scanning inspection method of claim 7, wherein the dynamic compensation of the scanning electron beam is performed by:
s81, the motion platform control unit transmits the position difference value information delta X and delta Y to a scanning sampling unit, and the scanning sampling unit performs coordinate conversion and proportional control to obtain deflection voltage required to be compensated on a deflector;
s82, based on the step S81, the deflection voltage required to be compensated on the deflector is superposed with the analog signal output by the deflector through the adder and then output to the polar plate of the deflector.
9. The continuous scan test method of claim 7, wherein the dynamic compensation of the scanning electron beam is further performed by:
s91, the motion platform control unit outputs the difference value delta X and the difference value delta Y to a scanning sampling unit in a digital quantity output mode;
s92, based on the step S91, converting the difference values delta X and delta Y into DA analog quantity by the scanning sampling unit after proportional operation, and outputting the DA analog quantity to any deflector;
s93, based on the step S92, adding a path of simulation design in parallel to the deflector to complete coordinate conversion and proportional control, and obtaining deflection voltage required to be compensated on the deflector;
and S94, based on the step S93, outputting the deflection voltage needing to be compensated on the deflector to the polar plate of the deflector after being superposed with the analog signal output by the deflector through the adder.
10. The continuous scanning detection method of the semiconductor detection device according to any one of claims 8 or 9, wherein the specific method for performing coordinate conversion and proportional control to obtain the deflection voltage required to be compensated on the deflector is as follows:
s101, the coordinate error value of the coordinate axis converted from the X-Y coordinate axis to the L-F coordinate axis is as follows:
DL=ΔX*cosα+ΔY*sinα
DF=ΔY*cosα-ΔX*sinα
wherein DL is a coordinate error value in the L-F coordinate axis L direction, and DF is a coordinate error value in the L-F coordinate axis F direction;
s102, obtaining a voltage value to be compensated under an L-F coordinate axis according to the coordinate error value in the L-F direction, wherein the voltage value to be compensated under the L-F coordinate axis is as follows:
ΔVL=DL*G1
ΔVF=DF*G2
wherein, Δ VL is a voltage value required to be compensated in the direction of L-F coordinate axis L, Δ VF is a voltage value required to be compensated in the direction of F coordinate axis L-F, and G1 and G2 are proportionality coefficients representing the relationship between displacement and deflection voltage values;
s103, obtaining deflection voltage values required to be compensated on the deflector in the X1-Y1 coordinate axis according to the voltage values required to be compensated in the L-F coordinate axis, wherein the deflection voltage values required to be compensated on the deflector in the X1-Y1 coordinate axis are as follows:
ΔVX1=ΔVL*cosθ+ΔVF*sinθ
ΔVY1=ΔVF*cosθ-ΔVL*sinθ
wherein, Δ VX1 is the deflection voltage value required to be compensated by the deflector in the X1 direction of the X1-Y1 coordinate axis, and Δ VY1 is the deflection voltage value required to be compensated by the deflector in the Y1 direction of the X1-Y1 coordinate axis.
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