CN115774027B - Continuous scanning detection method for semiconductor detection equipment - Google Patents
Continuous scanning detection method for semiconductor detection equipment Download PDFInfo
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- CN115774027B CN115774027B CN202310024085.6A CN202310024085A CN115774027B CN 115774027 B CN115774027 B CN 115774027B CN 202310024085 A CN202310024085 A CN 202310024085A CN 115774027 B CN115774027 B CN 115774027B
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Abstract
The invention relates to the field of semiconductor detection equipment, in particular to a continuous scanning detection method of semiconductor detection equipment, which comprises the steps of sending a coordinate sequence to a user side of a motion platform control unit; the motion platform control unit is used for controlling the position and the speed of the motion platform and transmitting a sampling start signal and a sampling stop signal to the scanning sampling unit; a motion stage for carrying a wafer to be tested; the laser ranging unit is used for ranging the moving platform and feeding back the measured position information of the moving platform to the moving platform control unit; the scanning sampling unit is used for scanning and sampling and transmitting a single frame image to an image end, and is further electrically connected with at least one deflector; the invention transfers the original path calculation synchronization, the motion synchronization, the scanning synchronization and the image acquisition synchronization to the motion platform control unit and the scanning sampling unit to be respectively born, thereby greatly improving the frequency response performance of system coordination.
Description
Technical Field
The invention relates to the field of semiconductor detection equipment, in particular to a continuous scanning detection method of semiconductor detection equipment.
Background
In the semiconductor manufacturing process, the product yield is easily reduced due to defects in the process or materials, so that detection equipment such as a scanning electron microscope is required to detect the defects so as to improve the yield of the semiconductor chip.
At present, in the field of semiconductor detection equipment, the method can be divided into a progressive method and a continuous method according to the matching mode between an electron beam and a motion platform, wherein the progressive scanning detection mode has lower detection efficiency, and the continuous scanning detection equipment performs unified central coordination on path calculation synchronization, motion synchronization, scanning synchronization and image acquisition synchronization through a Real-time PC.
For example, patent application publication No. CN115078392a discloses a semiconductor chip defect detecting device and method, in which a wire scanning image sensor, a display, a camera and a servo motor are all connected with a computer, that is, the computer uniformly collects signals for coordination, and this way is easily broken or delayed in synchronization, calculation and triggering of multiple data, so that the system coordination performance is low, and therefore, a system with high coordination performance and high detection efficiency is still needed at present.
Disclosure of Invention
The invention aims to provide a continuous scanning detection method of semiconductor detection equipment, which saves Real-time PC, transfers the original path calculation synchronization, motion synchronization, scanning synchronization and image acquisition synchronization to a motion platform control unit and a scanning sampling unit to be respectively born, and greatly improves the coordinated frequency response performance of the system.
In order to achieve the above purpose, the present invention provides the following technical solutions:
in a first aspect, the present invention provides a continuous scanning control system for a semiconductor inspection apparatus, comprising:
the user end is used for generating a detection coordinate sequence according to the user specialization detection requirement and transmitting a coordinate sequence result to the motion platform control unit;
the motion platform control unit is used for controlling the position and the speed of the motion platform according to a given coordinate sequence, and is also used for transmitting a sampling start signal and a sampling stop signal to the scanning sampling unit;
the motion platform is used for bearing the wafer to be tested;
the laser ranging unit is used for performing ranging in the X direction and ranging in the Y direction on the moving platform and feeding back the measured position information of the moving platform to the moving platform control unit;
the scanning sampling unit is used for scanning and sampling according to the sampling start signal and the sampling stop signal given by the motion platform control unit and transmitting a single frame image to the image end, and is further electrically connected with at least one deflector.
Preferably, the laser ranging unit can transmit the measured position information of the moving platform to the moving platform control unit in a 1VPP analog signal mode; the laser ranging unit may also transmit the measured motion stage position information to the motion stage control unit digitally (e.g., HSSL or AquadB) via a high-speed digital bus interface.
In a second aspect, the present invention provides a method for detecting continuous scanning of a semiconductor detecting apparatus, comprising the steps of:
s1, a user side inputs the overall requirement of a user scanning system;
s2, based on the step S1, the user side decomposes the input requirement into a detection coordinate sequence in a head-to-tail mode, and sends the coordinate sequence to the motion platform control unit;
s3, based on the step S2, the motion platform control unit controls the position and the speed of the motion platform according to a given coordinate sequence;
s4, based on the step S3, the motion platform control unit sends a sampling start signal and a sampling stop signal to the scanning sampling unit and controls the motion platform to cooperate with the scanning sampling unit to sample images;
s5, based on the step S4, the scanning sampling unit performs scanning sampling according to the sampling start signal and the sampling stop signal and transmits the frame image stream to the image end.
Further, the specific steps of step S3 are as follows:
s31, the motion platform control unit performs path planning according to a coordinate interval in a given coordinate sequence to determine a motion track;
s32, based on the step S31, speed control is carried out between adjacent coordinate intervals and in a single coordinate interval in a mode of acceleration-deceleration-acceleration-uniform speed-acceleration-deceleration, wherein the speed control mode can be sequentially changed or combined according to actual needs, and the next sampling area can be ensured to be reached quickly, wherein the starting point of the uniform speed process is a sampling start signal trigger point, and the ending point of the uniform speed process is a sampling stop signal trigger point.
Further, in step S4, the specific steps of the motion platform control unit controlling the motion platform to cooperate with the scanning sampling unit to sample the image are as follows:
s41, sequentially extracting coordinate starting points from the coordinate sequences by the motion platform control unit;
s42, based on the step S41, the motion platform control unit drives the motion platform to move to a sampling start initial coordinate position;
s43, based on the step S42, the motion platform control unit transmits a sampling start signal to the scanning sampling unit;
s44, based on the step S43, the motion platform control unit drives the motion platform to move at a uniform speed according to the required speed until the motion platform moves to the tail coordinate position after sampling;
s45, based on the step S44, the motion platform control unit sends a sampling stop signal to the scanning sampling unit, and the step S41 is returned.
Further, in step S5, the specific steps of the scan sampling unit performing scan sampling are as follows:
s51, the scanning sampling unit waits for triggering a sampling start signal, and if the sampling start signal is triggered, the step S52 is executed;
s52, the scanning sampling unit receives a sampling start signal, and returns to the step S51 if the scanning sampling unit does not receive the sampling start signal;
s53, based on the step S52, the scanning sampling unit generates line and frame DA scanning signals required by the deflector, AD sampling is synchronously started, and the line and frame of a sampling channel are synchronous with the DA scanning signals;
s54, based on the step S53, the scanning sampling unit performs AD sampling reception according to the rows and the frames and transmits AD data into image packets in real time back to the image end until a sampling stop signal is received;
s55, based on the step S54, the scanning sampling unit stops sampling after receiving the sampling stop signal, and the step S51 is returned.
Preferably, the method further comprises the following steps:
s71, defining a coordinate axis of a motion table as an X-Y coordinate axis, defining an X1-Y1 coordinate axis with the space arrangement direction of an X-Y polar plate of any deflector being orthogonal, defining the coordinate axis as an L-F coordinate axis according to the front view direction of a wafer to be tested in overlook, wherein row and frame signals required in actual image scanning are based on the L-F coordinate axis;
s72, defining an included angle between the X1-Y1 coordinate axis and the L-F coordinate axis as theta, defining an included angle between the L-F coordinate axis and the X-Y coordinate axis as alpha, and defining an included angle between the X1-Y1 coordinate axis and the X-Y coordinate axis as beta, wherein beta=alpha+theta can be obtained;
s73, feeding back the measured position information of the moving table to a moving platform control unit by a laser ranging unit, wherein the installation of the laser ranging unit is required to be matched with a coordinate definition item of the moving table;
s74, the motion platform control unit calculates to obtain the difference between the current required target given coordinates and the actual feedback position of the motion platform in the X, Y direction as delta X and delta Y respectively;
s75, the motion platform control unit controls the scanning sampling unit to conduct scanning electron beam dynamic compensation according to the position difference information delta X and delta Y, and scanning image distortion caused by motion platform vibration errors can be compensated by superposing disturbance compensation on electron beam deflection signals.
Preferably, the method for dynamically compensating the scanning electron beam comprises the following steps:
s81, the motion platform control unit transmits the position difference information delta X and delta Y to the scanning sampling unit, and the scanning sampling unit performs coordinate conversion and proportional control to obtain deflection voltage required to be compensated on the deflector;
s82, based on the step S81, the deflection voltage required to be compensated on the deflector is overlapped with the analog signal output by the deflector through the adder and then is output to the deflector polar plate;
in the method, coordinate conversion and proportion control are directly carried out in the scanning sampling unit, the scaling treatment of small disturbance signals is reduced as much as possible, effective precision is kept, the mode is flexible, the operation amount is large, the upper limit of the bandwidth of compensation can be influenced, and the dynamic compensation method is also applicable to progressive semiconductor detection equipment.
Preferably, the method for dynamically compensating the scanning electron beam can further be as follows:
s91, the motion platform control unit outputs the difference values delta X and delta Y to the scanning sampling unit in a digital quantity output mode;
s92, based on the step S91, the scanning sampling unit performs proportional operation on the difference values delta X and delta Y and then converts the difference values delta X and delta Y into DA analog quantity to output the DA analog quantity to any deflector;
s93, based on the step S92, the deflector is added with one path of analog design in parallel to complete coordinate conversion and proportion control, and deflection voltage required to be compensated on the deflector is obtained;
s94, based on the step S93, the deflection voltage required to be compensated on the deflector is overlapped with the analog signal output by the deflector through the adder and then is output to the deflector polar plate;
in the method, the calculation superposition of coordinate conversion and proportional control is directly completed by an analog part, the compensation operation bandwidth can be designed to be high enough, but the defect topological structure and parameters of the method are relatively fixed, the flexibility is insufficient, and the dynamic compensation method is also suitable for progressive semiconductor detection equipment.
Further, the specific method for obtaining the deflection voltage to be compensated on the deflector by coordinate conversion and proportional control is as follows:
s101, converting the X-Y coordinate axis into a coordinate error value on the L-F coordinate axis:
DL=ΔX*cosα+ΔY*sinα
DF=ΔY*cosα-ΔX*sinα
wherein DL is the coordinate error value in the L direction of the L-F coordinate axis, DF is the coordinate error value in the F direction of the L-F coordinate axis;
s102, obtaining a voltage value to be compensated under the L-F coordinate axis according to the coordinate error value in the L-F direction, wherein the voltage value is as follows:
ΔVL=DL*G1
ΔVF=DF*G2
wherein DeltaVL is a voltage value required to be compensated in the L direction of the L-F coordinate axis, deltaVF is a voltage value required to be compensated in the F direction of the L-F coordinate axis, and G1 and G2 are proportionality coefficients and represent the relation between displacement and deflection voltage values;
s103, obtaining deflection voltage values required to be compensated on the deflector under the X1-Y1 coordinate axis according to the voltage values required to be compensated under the L-F coordinate axis, wherein the deflection voltage values are as follows:
ΔVX1=ΔVL*cosθ+ΔVF*sinθ
ΔVY1=ΔVF*cosθ-ΔVL*sinθ
wherein DeltaVX 1 is the deflection voltage value required to be compensated by the deflector in the X1-Y1 coordinate axis X1 direction, and DeltaVY 1 is the deflection voltage value required to be compensated by the deflector in the X1-Y1 coordinate axis Y1 direction.
The beneficial effects of the invention are as follows:
1) Real-time PC is saved, original path calculation synchronization, motion synchronization, scanning synchronization and image acquisition synchronization are transferred and transferred to a motion platform control unit and a scanning sampling unit to be respectively born, and the frequency response performance of system coordination is greatly improved.
2) The path calculation is placed in a motion platform control unit, the user side issues all key starting point coordinate sequences required in single detection, the motion platform control unit controls the motion track and the motion speed according to the coordinate points, and a sampling start signal is sent to a scanning sampling unit at a sampling point, so that the whole system can continuously run without being interrupted or delayed by unnecessary modes such as synchronization, calculation, triggering and the like.
3) The position disturbance signal of the motion platform is led out through the motion platform control unit, is directly output to the deflector through the reverse compensation superposition of the scanning sampling unit, and is tracked through the synchronous change of the electron beam, so that a good dynamic compensation effect is obtained.
4) The two different dynamic compensation modes of the scanning electron beam are provided, one can be selected for use according to the disturbance size, the flexible specific processing requirement and the cost consideration, but no matter what dynamic compensation mode of the scanning electron beam is adopted, the hardware delay is within 1us, the quick tracking correction can be achieved, and compared with the control period delay of a position signal in ms level through a Real-time PC, the frequency response performance of the system position tracking is greatly improved.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention. In the drawings:
FIG. 1 is a schematic diagram of the overall architecture of a system module of the present invention;
FIG. 2 is a general step diagram of a continuous scanning detection method of the present invention;
FIG. 3 is a schematic diagram of a method for controlling a motion platform by a motion platform control unit according to a coordinate point sequence;
FIG. 4 is a step diagram of image sampling of the present invention;
FIG. 5 is a scanning sampling flow chart of the present invention;
FIG. 6 is a schematic diagram of the dynamic compensation control of a scanning electron beam according to the present invention;
FIG. 7 is a schematic diagram of the coordinate position relationship between the motion stage and the component to be tested and the deflector thereof according to the present invention;
FIG. 8 is a schematic diagram of a method for dynamic compensation of a scanning electron beam according to the present invention.
Detailed Description
Example 1
As shown in fig. 1, the present invention provides a continuous scanning control system of a semiconductor inspection apparatus, comprising:
the user end is used for generating a detection coordinate sequence according to the user specialization detection requirement and transmitting the coordinate sequence result to the motion platform control unit.
The motion platform control unit is used for controlling the position and the speed of the motion platform according to a given coordinate sequence, and the motion platform control unit is also used for transmitting a sampling start signal and a sampling stop signal to the scanning sampling unit.
The motion platform is used for bearing the wafer to be tested.
The laser ranging unit is used for performing ranging in the X direction and ranging in the Y direction on the moving platform and feeding back the measured position information of the moving platform to the moving platform control unit; the laser ranging unit can transmit the measured position information of the moving platform to the moving platform control unit in a 1VPP analog signal mode; the laser ranging unit may also digitally transmit the measured motion stage position information to the motion stage control unit via a high-speed digital bus interface, such as HSSL or AquadB.
The scanning sampling unit is used for scanning and sampling according to the sampling start signal and the sampling stop signal given by the motion platform control unit and transmitting a single frame image to the image end, and is further electrically connected with at least one deflector, and the scanning sampling unit adopts the design scheme of an FPGA.
Example 2
As shown in fig. 2, the present invention provides a detection method for continuous scanning of a semiconductor detection apparatus, comprising the steps of:
s1, a user side inputs the overall requirement of a user scanning system.
S2, based on the step S1, the user side decomposes the input requirement into a detection coordinate sequence in a head-to-tail mode, and sends the coordinate sequence to the motion platform control unit.
S3, based on the step S2, the motion platform control unit controls the position and the speed of the motion platform according to a given coordinate sequence;
the specific method of step S3 is shown in fig. 3:
the motion platform control unit performs path planning according to a coordinate interval in a given coordinate sequence, determines a motion track, generates n+1 separated wafer areas to be detected by taking an X-Y coordinate axis of a motion platform as a reference, and forms a wafer area by two sets of diagonal coordinate point sequences of a single separated wafer;
the speed control is carried out between adjacent coordinate intervals and in a single coordinate interval in a mode of acceleration-deceleration-uniform speed-acceleration-deceleration, wherein the speed control mode can be sequentially changed or combined according to actual needs to ensure that the next sampling area can be reached quickly, wherein the starting point of the uniform speed process is a sampling start signal trigger point, and the ending point of the uniform speed process is a sampling stop signal trigger point.
S4, based on the step S3, the motion platform control unit sends a sampling start signal and a sampling stop signal to the scanning sampling unit and controls the motion platform to cooperate with the scanning sampling unit to sample images;
the specific method of step S4 is shown in fig. 4:
s41, sequentially extracting coordinate starting points from the coordinate sequences by the motion platform control unit;
s42, based on the step S41, the motion platform control unit drives the motion platform to move to a sampling start initial coordinate position;
s43, based on the step S42, the motion platform control unit transmits a sampling start signal to the scanning sampling unit;
s44, based on the step S43, the motion platform control unit drives the motion platform to move at a uniform speed according to the required speed until the motion platform moves to the tail coordinate position after sampling;
s45, based on the step S44, the motion platform control unit sends a sampling stop signal to the scanning sampling unit, and the step S41 is returned.
S5, based on the step S4, the scanning sampling unit performs scanning sampling according to the sampling start signal and the sampling stop signal and transmits a frame image stream to an image end;
the step flow of step S5 is as shown in fig. 5:
s51, the scanning sampling unit waits for triggering a sampling start signal, and if the sampling start signal is triggered, the step S52 is executed;
s52, the scanning sampling unit receives a sampling start signal, and returns to the step S51 if the scanning sampling unit does not receive the sampling start signal;
s53, based on the step S52, the scanning sampling unit generates line and frame DA scanning signals required by the deflector, AD sampling is synchronously started, and the line and frame of a sampling channel are synchronous with the DA scanning signals;
s54, based on the step S53, the scanning sampling unit performs AD sampling reception according to the rows and the frames and transmits AD data into image packets in real time back to the image end until a sampling stop signal is received;
s55, based on the step S54, the scanning sampling unit stops sampling after receiving the sampling stop signal, and the step S51 is returned.
Example 3
On the basis of embodiment 2, the invention provides a detection method for continuous scanning of semiconductor detection equipment, which further comprises the following steps:
s71, as shown in FIG. 7, defining a coordinate axis of a motion stage as an X-Y coordinate axis, defining an X1-Y1 coordinate axis in which the spatial arrangement direction of an X-Y polar plate of any deflector is orthogonal, defining a coordinate axis as an L-F coordinate axis according to the front view direction of a wafer to be tested in the overlook direction, and taking the L-F coordinate axis as a reference for line and frame signals required in actual image scanning.
S72, defining an included angle between the X1-Y1 coordinate axis and the L-F coordinate axis as theta, defining an included angle between the L-F coordinate axis and the X-Y coordinate axis as alpha, and defining an included angle between the X1-Y1 coordinate axis and the X-Y coordinate axis as beta, so that beta=alpha+theta can be obtained.
S73, feeding back the measured position information of the moving platform to the moving platform control unit by the laser ranging unit, wherein the installation of the laser ranging unit is required to be matched with the coordinate definition item of the moving platform.
S74, as shown in FIG. 6, the motion platform control unit calculates that the difference between the current required target given coordinates and the actual feedback position of the motion platform in the X, Y direction is DeltaX and DeltaY respectively.
S75, as shown in FIG. 6, the motion platform control unit controls the scanning sampling unit to perform scanning electron beam dynamic compensation according to the position difference information delta X and delta Y, and the disturbance compensation is overlapped on the electron beam deflection signal to compensate the scanning image distortion caused by the vibration error of the motion platform.
The method for dynamically compensating the scanning electron beam is as shown in fig. 8:
s81, the motion platform control unit transmits the position difference information delta X and delta Y to the scanning sampling unit, and the scanning sampling unit performs coordinate conversion and proportion control to obtain deflection voltage required to be compensated on the deflector.
S82, based on the step S81, the deflection voltage to be compensated on the deflector is overlapped with the analog signal output by the deflector through the adder and then is output to the deflector polar plate.
In the method, coordinate conversion and proportion control are directly carried out in the scanning sampling unit, the scaling treatment of small disturbance signals is reduced as much as possible, effective precision is kept, the mode is flexible, the operation amount is large, the upper limit of the bandwidth of compensation can be influenced, and the dynamic compensation method is also applicable to progressive semiconductor detection equipment.
The specific method for obtaining the deflection voltage required to be compensated on the deflector by carrying out coordinate conversion and proportional control is as follows:
s101, converting the X-Y coordinate axis into a coordinate error value on the L-F coordinate axis:
DL=ΔX*cosα+ΔY*sinα
DF=ΔY*cosα-ΔX*sinα
wherein DL is the coordinate error value in the L direction of the L-F coordinate axis, and DF is the coordinate error value in the F direction of the L-F coordinate axis.
S102, obtaining a voltage value to be compensated under the L-F coordinate axis according to the coordinate error value in the L-F direction, wherein the voltage value is as follows:
ΔVL=DL*G1
ΔVF=DF*G2
wherein DeltaVL is a voltage value required to be compensated in the L-F coordinate axis L direction, deltaVF is a voltage value required to be compensated in the L-F coordinate axis F direction, and G1 and G2 are proportionality coefficients, and represent the relation between displacement and deflection voltage values.
S103, obtaining deflection voltage values required to be compensated on the deflector under the X1-Y1 coordinate axis according to the voltage values required to be compensated under the L-F coordinate axis, wherein the deflection voltage values are as follows:
ΔVX1=ΔVL*cosθ+ΔVF*sinθ
ΔVY1=ΔVF*cosθ-ΔVL*sinθ
wherein DeltaVX 1 is the deflection voltage value required to be compensated by the deflector in the X1-Y1 coordinate axis X1 direction, and DeltaVY 1 is the deflection voltage value required to be compensated by the deflector in the X1-Y1 coordinate axis Y1 direction.
The other method steps of this example 3 are the same as those of example 2.
Example 4
On the basis of embodiment 2, the invention provides a detection method for continuous scanning of semiconductor detection equipment, which further comprises the following steps:
s71, as shown in FIG. 7, defining a coordinate axis of a motion stage as an X-Y coordinate axis, defining an X1-Y1 coordinate axis in which the spatial arrangement direction of an X-Y polar plate of any deflector is orthogonal, defining a coordinate axis as an L-F coordinate axis according to the front view direction of a wafer to be tested in the overlook direction, and taking the L-F coordinate axis as a reference for line and frame signals required in actual image scanning.
S72, defining an included angle between the X1-Y1 coordinate axis and the L-F coordinate axis as theta, defining an included angle between the L-F coordinate axis and the X-Y coordinate axis as alpha, and defining an included angle between the X1-Y1 coordinate axis and the X-Y coordinate axis as beta, so that beta=alpha+theta can be obtained.
S73, feeding back the measured position information of the moving platform to the moving platform control unit by the laser ranging unit, wherein the installation of the laser ranging unit is required to be matched with the coordinate definition item of the moving platform.
S74, as shown in FIG. 6, the motion platform control unit calculates the difference between the given position sequence of the user side and the actual feedback position of the motion platform in the X, Y direction to be DeltaX and DeltaY respectively.
S75, as shown in FIG. 6, the motion platform control unit controls the scanning sampling unit to perform scanning electron beam dynamic compensation according to the position difference information delta X and delta Y, and the disturbance compensation is overlapped on the electron beam deflection signal to compensate the scanning image distortion caused by the vibration error of the motion platform.
The method for dynamically compensating the scanning electron beam is as shown in fig. 8:
s91, the motion platform control unit outputs the difference values delta X and delta Y to the scanning sampling unit in a digital quantity output mode.
S92, based on the step S91, the scanning sampling unit performs proportional operation on the difference values delta X and delta Y and then converts the difference values delta X and delta Y into DA analog quantity to output the DA analog quantity to any deflector.
S93, based on the step S92, the deflector is added with one path of analog design in parallel to complete coordinate conversion and proportion control, and deflection voltage required to be compensated on the deflector is obtained.
S94, based on the step S93, the deflection voltage to be compensated on the deflector is overlapped with the analog signal output by the deflector through the adder and then is output to the deflector polar plate.
In the method, the calculation superposition of coordinate conversion and proportional control is directly completed by an analog part, the compensation operation bandwidth can be designed to be high enough, but the defect topological structure and parameters of the method are relatively fixed, the flexibility is insufficient, and the dynamic compensation method is also suitable for progressive semiconductor detection equipment.
The specific method for obtaining the deflection voltage required to be compensated on the deflector by carrying out coordinate conversion and proportional control is as follows:
s101, converting the X-Y coordinate axis into a coordinate error value on the L-F coordinate axis:
DL=ΔX*cosα+ΔY*sinα
DF=ΔY*cosα-ΔX*sinα
wherein DL is the coordinate error value in the L direction of the L-F coordinate axis, and DF is the coordinate error value in the F direction of the L-F coordinate axis.
S102, obtaining a voltage value to be compensated under the L-F coordinate axis according to the coordinate error value in the L-F direction, wherein the voltage value is as follows:
ΔVL=DL*G1
ΔVF=DF*G2
wherein DeltaVL is a voltage value required to be compensated in the L-F coordinate axis L direction, deltaVF is a voltage value required to be compensated in the L-F coordinate axis F direction, and G1 and G2 are proportionality coefficients, and represent the relation between displacement and deflection voltage values.
S103, obtaining deflection voltage values required to be compensated on the deflector under the X1-Y1 coordinate axis according to the voltage values required to be compensated under the L-F coordinate axis, wherein the deflection voltage values are as follows:
ΔVX1=ΔVL*cosθ+ΔVF*sinθ
ΔVY1=ΔVF*cosθ-ΔVL*sinθ
wherein DeltaVX 1 is the deflection voltage value required to be compensated by the deflector in the X1-Y1 coordinate axis X1 direction, and DeltaVY 1 is the deflection voltage value required to be compensated by the deflector in the X1-Y1 coordinate axis Y1 direction.
Other method steps of this example 4 are the same as those of example 2.
The foregoing description is only a preferred embodiment of the present invention, and the present invention is not limited thereto, but it is to be understood that modifications and equivalents of some of the technical features described in the foregoing embodiments may be made by those skilled in the art, although the present invention has been described in detail with reference to the foregoing embodiments. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. The continuous scanning detection method of the semiconductor detection equipment comprises a continuous scanning control system of the semiconductor detection equipment, and is characterized in that the continuous scanning control system of the semiconductor detection equipment comprises the following steps:
the user end is used for generating a detection coordinate sequence according to the user specialization detection requirement and transmitting a coordinate sequence result to the motion platform control unit;
the motion platform control unit is used for controlling the position and the speed of the motion platform according to a given coordinate sequence, and is also used for transmitting a sampling start signal and a sampling stop signal to the scanning sampling unit;
the motion platform is used for bearing the wafer to be tested;
the laser ranging unit is used for performing ranging in the X direction and ranging in the Y direction on the moving platform and feeding back the measured position information of the moving platform to the moving platform control unit;
the scanning sampling unit is used for scanning and sampling according to the sampling start signal and the sampling stop signal given by the motion platform control unit and transmitting a single frame image to the image end, and is further electrically connected with at least one deflector;
the detection method for the continuous scanning of the semiconductor detection equipment comprises the following steps:
s1, a user side inputs the overall requirement of a user scanning system;
s2, based on the step S1, the user side decomposes the input requirement into a detection coordinate sequence in a head-to-tail mode, and sends the coordinate sequence to the motion platform control unit;
s3, based on the step S2, the motion platform control unit controls the position and the speed of the motion platform according to a given coordinate sequence;
s4, based on the step S3, the motion platform control unit sends a sampling start signal and a sampling stop signal to the scanning sampling unit and controls the motion platform to cooperate with the scanning sampling unit to sample images;
s5, based on the step S4, the scanning sampling unit performs scanning sampling according to the sampling start signal and the sampling stop signal and transmits a frame image stream to an image end;
the method also comprises the following steps:
s71, defining a coordinate axis of a motion table as an X-Y coordinate axis, defining an X1-Y1 coordinate axis with the space arrangement direction of an X-Y polar plate of any deflector being orthogonal, and defining the coordinate axis as an L-F coordinate axis according to the front view direction of a wafer to be tested in overlook;
s72, defining an included angle between the X1-Y1 coordinate axis and the L-F coordinate axis as theta, defining an included angle between the L-F coordinate axis and the X-Y coordinate axis as alpha, and defining an included angle between the X1-Y1 coordinate axis and the X-Y coordinate axis as beta, wherein beta=alpha+theta can be obtained;
s73, feeding back the measured position information of the moving platform to a moving platform control unit by a laser ranging unit;
s74, the motion platform control unit calculates to obtain the difference between the current required target given coordinates and the actual feedback position of the motion platform in the X, Y direction as delta X and delta Y respectively;
s75, the motion platform control unit controls the scanning sampling unit to adopt scanning electron beam dynamic compensation according to the position difference information delta X and delta Y;
the method for dynamically compensating the scanning electron beam comprises the following steps:
s81, the motion platform control unit transmits the position difference information delta X and delta Y to the scanning sampling unit, and the scanning sampling unit performs coordinate conversion and proportional control to obtain deflection voltage required to be compensated on the deflector;
s82, based on the step S81, the deflection voltage to be compensated on the deflector is overlapped with the analog signal output by the deflector through the adder and then is output to the deflector polar plate.
2. The continuous scanning inspection method of a semiconductor inspection apparatus according to claim 1, wherein: the laser ranging unit can transmit the measured position information of the moving platform to the moving platform control unit in a 1VPP analog signal mode; the laser ranging unit can also transmit the measured position information of the moving platform to the moving platform control unit in a digital mode of the high-speed digital bus interface.
3. The continuous scanning inspection method of semiconductor inspection equipment according to claim 1, wherein the specific steps of step S3 are:
s31, the motion platform control unit performs path planning according to a coordinate interval in a given coordinate sequence to determine a motion track;
s32, speed control is carried out between adjacent coordinate intervals and in a single coordinate interval in a mode of acceleration-deceleration-uniform speed-acceleration-deceleration based on the step S31, wherein the starting point of the uniform speed process is a sampling start signal trigger point, and the ending point of the uniform speed process is a sampling stop signal trigger point.
4. The continuous scanning detection method of a semiconductor detection apparatus according to claim 1, wherein the specific steps of the motion platform control unit controlling the motion platform to cooperate with the scanning sampling unit to sample the image in step S4 are as follows:
s41, sequentially extracting coordinate starting points from the coordinate sequences by the motion platform control unit;
s42, based on the step S41, the motion platform control unit drives the motion platform to move to a sampling start initial coordinate position;
s43, based on the step S42, the motion platform control unit transmits a sampling start signal to the scanning sampling unit;
s44, based on the step S43, the motion platform control unit drives the motion platform to move at a uniform speed according to the required speed until the motion platform moves to the tail coordinate position after sampling;
s45, based on the step S44, the motion platform control unit sends a sampling stop signal to the scanning sampling unit, and the step S41 is returned.
5. The continuous scanning detection method of a semiconductor detection apparatus according to claim 1, wherein in step S5, the specific steps of scanning sampling by the scanning sampling unit are as follows:
s51, the scanning sampling unit waits for triggering a sampling start signal, and if the sampling start signal is triggered, the step S52 is executed;
s52, the scanning sampling unit receives a sampling start signal, and returns to the step S51 if the scanning sampling unit does not receive the sampling start signal;
s53, based on the step S52, the scanning sampling unit generates line and frame DA scanning signals required by the deflector, AD sampling is synchronously started, and the line and frame of a sampling channel are synchronous with the DA scanning signals;
s54, based on the step S53, the scanning sampling unit performs AD sampling reception according to the rows and the frames and transmits AD data into image packets in real time back to the image end until a sampling stop signal is received;
s55, based on the step S54, the scanning sampling unit stops sampling after receiving the sampling stop signal, and the step S51 is returned.
6. The method for continuously scanning and detecting a semiconductor detecting device according to claim 1, wherein the method for performing dynamic compensation of scanning electron beams further comprises:
s91, the motion platform control unit outputs the difference values delta X and delta Y to the scanning sampling unit in a digital quantity output mode;
s92, based on the step S91, the scanning sampling unit performs proportional operation on the difference values delta X and delta Y and then converts the difference values delta X and delta Y into DA analog quantity to output the DA analog quantity to any deflector;
s93, based on the step S92, the deflector is added with one path of analog design in parallel to complete coordinate conversion and proportion control, and deflection voltage required to be compensated on the deflector is obtained;
s94, based on the step S93, the deflection voltage to be compensated on the deflector is overlapped with the analog signal output by the deflector through the adder and then is output to the deflector polar plate.
7. The method for continuously scanning and detecting a semiconductor detecting device according to any one of claims 1 to 6, wherein the specific method for obtaining the deflection voltage to be compensated on the deflector by performing coordinate conversion and proportional control is as follows:
s101, converting the X-Y coordinate axis into a coordinate error value on the L-F coordinate axis:
DL=ΔX*cosα+ΔY*sinα
DF=ΔY*cosα-ΔX*sinα
wherein DL is the coordinate error value in the L direction of the L-F coordinate axis, DF is the coordinate error value in the F direction of the L-F coordinate axis;
s102, obtaining a voltage value to be compensated under the L-F coordinate axis according to the coordinate error value in the L-F direction, wherein the voltage value is as follows:
ΔVL=DL*G1
ΔVF=DF*G2
wherein DeltaVL is a voltage value required to be compensated in the L direction of the L-F coordinate axis, deltaVF is a voltage value required to be compensated in the F direction of the L-F coordinate axis, and G1 and G2 are proportionality coefficients and represent the relation between displacement and deflection voltage values;
s103, obtaining deflection voltage values required to be compensated on the deflector under the X1-Y1 coordinate axis according to the voltage values required to be compensated under the L-F coordinate axis, wherein the deflection voltage values are as follows:
ΔVX1=ΔVL*cosθ+ΔVF*sinθ
ΔVY1=ΔVF*cosθ-ΔVL*sinθ
wherein DeltaVX 1 is the deflection voltage value required to be compensated by the deflector in the X1-Y1 coordinate axis X1 direction, and DeltaVY 1 is the deflection voltage value required to be compensated by the deflector in the X1-Y1 coordinate axis Y1 direction.
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