CN115763576A

CN115763576A - Method for manufacturing optical communication module

Info

Publication number: CN115763576A
Application number: CN202211445203.2A
Authority: CN
Inventors: 叶士德; 刘忠武; 张正芳
Original assignee: Yihong Technology Co ltd; Yihong Technology Chengdu Co ltd
Current assignee: Yihong Technology Co ltd; Yihong Technology Chengdu Co ltd
Priority date: 2022-11-18
Filing date: 2022-11-18
Publication date: 2023-03-07
Also published as: TWI816608B

Abstract

The invention provides a method for manufacturing an optical communication module, which uses a photoelectric conversion element to shield light to replace the function of a high-precision photomask. The invention solves the problem that the production cost is increased because a high-precision photomask needs to be designed in the existing mode of manufacturing the optical communication module by using a photoetching method.

Description

Method for manufacturing optical communication module

Technical Field

The present invention relates to the field of optical communication, and more particularly, to a method for manufacturing an optical communication module.

Background

The optical communication module is a communication module for performing photoelectric conversion, wherein the optical communication module can be divided into a transmitting end and a receiving end, wherein the transmitting end is used for converting an electric signal into an optical signal, the receiving end is used for converting the optical signal into the electric signal, the transmitting end can be further divided into the transmitting module and an optical fiber, the transmitting module is coupled with the optical fiber, the transmitting module is further coupled with the printed circuit board to receive the electric signal transmitted by the printed circuit board and convert the received electric signal into the optical signal, the optical fiber is used for transmitting the optical signal generated by the transmitting module, the receiving end can be further divided into the receiving module and the optical fiber, the receiving module is coupled with the optical fiber, the receiving module is further coupled with the printed circuit board to receive the optical signal transmitted by the optical fiber and convert the received optical signal into the electric signal.

The coupling technology of the existing coupling optical communication module and the optical fiber can be divided into direct coupling and indirect coupling, wherein the direct coupling technology is to couple the optical fiber with the optical communication module directly, the optical communication module comprises a dielectric, a photoelectric conversion element and a metal circuit layer, wherein the photoelectric conversion element is positioned in the dielectric, the metal circuit layer is coupled with the photoelectric conversion element, the dielectric is provided with an opening to expose the upper surface of the photoelectric conversion element, the upper surface of the photoelectric conversion element comprises an aperture, and an optical signal generated by the photoelectric conversion element is output through the aperture, so that when the optical fiber is inserted into the opening arranged on the dielectric, the optical signal transmitted by the photoelectric conversion element through the aperture and an optical outlet can be received, and the effect of direct coupling can be achieved, wherein the manufacturing method of the optical communication module generally adopts a photoetching method, a wet etching method or a laser ablation method and the like; wherein the photoelectric conversion element can be a laser element or a light receiving element.

One of the current methods for manufacturing an optical communication module by photolithography is to dispose a photoelectric conversion element on a substrate, coat a dielectric on the peripheral region of the photoelectric conversion element and the upper surface of the photoelectric conversion element, so that the dielectric covers the photoelectric conversion element, wherein the dielectric can be a positive photoresist or a negative photoresist, and then precisely position the position of the photoelectric conversion element by using a high-precision mask, and expose the dielectric by a light source from above a high-precision mask, wherein if the dielectric is the positive photoresist, the exposed region does not generate a cross-linking reaction, and if the dielectric is the negative photoresist, the exposed region generates a cross-linking reaction, wherein the high-precision mask refers to a mask with a precision of 1 μm, and the high-precision mask functions to prevent the dielectric above the corresponding photoelectric conversion element from generating a cross-linking reaction, so that during development, a developer can be used to dissolve the dielectric above the photoelectric conversion element without generating a cross-linking reaction, thereby exposing the upper surface of the dielectric conversion element, and then forming a metal wiring layer on the upper surface of the photoelectric conversion element, wherein the metal wiring layer is coupled to the photoelectric conversion element, wherein the metal wiring layer is used for re-coupling of the printed circuit board, and the photo-conversion element, and the Spacer is disposed on the printed circuit board, thereby preventing the high-conversion element from being coupled to the high-precision Spacer, therefore, an opening is formed on the dielectric substance during development to expose the upper surface of the photoelectric conversion element and the spacer, and the subsequent optical fiber can be directly coupled through the insertion opening, wherein when the photoelectric conversion element is a laser component, the optical fiber can receive an optical signal transmitted by the laser component, and when the photoelectric conversion element is a light receiving component, the light receiving component can receive the optical signal transmitted by the optical fiber and space the optical fiber and the photoelectric conversion element through the spacer so as to prevent the optical fiber from being directly contacted with the photoelectric conversion element.

However, in the conventional method of manufacturing an optical communication module by photolithography, a high-precision mask is required to be used for accurately positioning the photoelectric conversion element, and the high-precision mask needs to be designed according to the shape and size of the photoelectric conversion element, which results in time and cost for designing the high-precision mask.

Disclosure of Invention

The present invention aims at improving the problem of high production cost caused by the high precision mask for positioning the exposure position in the prior art of manufacturing optical communication modules by photoetching.

Based on the objective of the present invention, the present invention provides a method for manufacturing an optical communication module, which sequentially comprises the steps of providing a transparent substrate, a first metal circuit layer and a photoelectric conversion element, wherein the first metal circuit layer is formed on a partial area of an upper surface of the transparent substrate, the photoelectric conversion element is disposed above the transparent substrate, and a lower surface of the photoelectric conversion element is coupled to the first metal circuit layer; coating a first negative photoresist on the peripheral area of the photoelectric conversion element and the upper surface of the photoelectric conversion element, wherein the peripheral area of the photoelectric conversion element comprises a partial area of the first metal circuit layer; exposing the first negative photoresist from the lower part of the transparent substrate to the upper part; developing the first negative photoresist to form a first patterned photoresist layer, wherein the first patterned photoresist layer is formed in the peripheral area of the photoelectric conversion element and exposes the upper surface of the photoelectric conversion element; forming a second metal circuit layer on a partial area of the upper surface of the photoelectric conversion element, the upper surface of the first patterned photoresist layer and the side surface of the first patterned photoresist layer, wherein the second metal circuit layer is coupled with the upper surface of the photoelectric conversion element; coating a second negative photoresist on the entire surface to cover the upper surface of the first patterned photoresist layer, the exposed part of the upper surface of the photoelectric conversion element and the partial area of the second metal circuit layer; exposing the first patterned photoresist layer and the second negative photoresist layer from the lower part of the light-transmitting substrate upwards; developing the second negative photoresist to form a second patterned photoresist layer, wherein the second patterned photoresist layer forms an opening relative to the area above the photoelectric conversion element, and the opening exposes the exposed part of the upper surface of the photoelectric conversion element; in an embodiment of the present invention, after completing each step, the method further includes a step of removing the transparent substrate; in an embodiment of the present invention, after the step of forming the second metal circuit layer on the partial region of the upper surface of the photoelectric conversion device, the upper surface of the first patterned photoresist layer, the side surface of the first patterned photoresist layer, and the second metal circuit layer coupled to the upper surface of the photoelectric conversion device is completed, the method further includes a step of forming a spacer on another partial region of the upper surface of the photoelectric conversion device.

Based on the objective of the present invention, the present invention provides a method for manufacturing an optical communication module, which sequentially comprises providing a transparent substrate, a first metal circuit layer and a photoelectric conversion element, wherein the first metal circuit layer is formed on a partial region of an upper surface of the transparent substrate, the photoelectric conversion element is disposed above the transparent substrate, and a lower surface of the photoelectric conversion element is coupled to the first metal circuit layer; coating a first negative photoresist on the peripheral area of the photoelectric conversion element and the upper surface of the photoelectric conversion element, wherein the peripheral area of the photoelectric conversion element comprises a partial area of the first metal circuit layer; exposing the first negative photoresist from the lower part of the transparent substrate to the upper part; developing the first negative photoresist to form a first patterned photoresist layer, wherein the first patterned photoresist layer is formed in the peripheral area of the photoelectric conversion element and exposes the upper surface of the photoelectric conversion element; coating a second negative photoresist on the entire surface to cover the upper surface of the first patterned photoresist layer and the exposed portion of the upper surface of the photoelectric conversion element; exposing the first patterned photoresist layer and the second negative photoresist layer from the lower part of the light-transmitting substrate upwards; developing the second negative photoresist to form a second patterned photoresist layer, wherein the second patterned photoresist layer forms an opening relative to the area above the photoelectric conversion element, and the opening exposes the exposed part of the upper surface of the photoelectric conversion element; in an embodiment of the present invention, after completing each step, the method further includes a step of removing the transparent substrate; in an embodiment of the present invention, after the step of developing the first negative photoresist to form the first patterned photoresist layer, the first patterned photoresist layer being formed in the peripheral region of the photoelectric conversion element and exposing the upper surface of the photoelectric conversion element, the method further includes the step of forming spacers in the partial region of the upper surface of the photoelectric conversion element.

Based on the objective of the present invention, the present invention provides a method for manufacturing an optical communication module, which sequentially comprises the steps of providing a transparent substrate and a photoelectric conversion element, wherein the photoelectric conversion element is disposed on the upper surface of the transparent substrate; coating a first negative photoresist on the peripheral region of the photoelectric conversion element and the upper surface of the photoelectric conversion element; exposing the first negative photoresist from the lower part of the transparent substrate to the upper part; developing the first negative photoresist to form a first patterned photoresist layer, wherein the first patterned photoresist layer is formed in the peripheral area of the photoelectric conversion element and exposes the upper surface of the photoelectric conversion element; forming a second metal circuit layer on a partial area of the upper surface of the photoelectric conversion element, the upper surface of the first patterned photoresist layer and the side surface of the first patterned photoresist layer, wherein the second metal circuit layer is coupled with the upper surface of the photoelectric conversion element; coating a second negative photoresist on the whole surface to cover the upper surface of the first patterned photoresist layer, the exposed part of the upper surface of the photoelectric conversion element and the partial area of the second metal circuit layer; exposing the first patterned photoresist layer and the second negative photoresist layer from the lower part of the light-transmitting substrate upwards; developing the second negative photoresist to form a second patterned photoresist layer, wherein the second patterned photoresist layer forms an opening relative to the area above the photoelectric conversion element, and the opening exposes the exposed part of the upper surface of the photoelectric conversion element; in an embodiment of the present invention, after each step is completed, the method further includes a step of removing the transparent substrate; in an embodiment of the present invention, after the step of forming the second metal circuit layer on the partial region of the upper surface of the photoelectric conversion device, the upper surface of the first patterned photoresist layer, the side surface of the first patterned photoresist layer, and the second metal circuit layer coupled to the upper surface of the photoelectric conversion device is completed, the method further includes a step of forming a spacer on another partial region of the upper surface of the photoelectric conversion device.

Based on the objective of the present invention, the present invention provides a method for manufacturing an optical communication module, which sequentially comprises the steps of providing a transparent substrate and a photoelectric conversion device, wherein the photoelectric conversion device is disposed above the transparent substrate; coating a first negative photoresist on the peripheral area of the photoelectric conversion element and the upper surface of the photoelectric conversion element; exposing the first negative photoresist from the lower part of the transparent substrate to the upper part; developing the first negative photoresist to form a first patterned photoresist layer, wherein the first patterned photoresist layer is formed in the peripheral area of the photoelectric conversion element and exposes the upper surface of the photoelectric conversion element; forming a second metal circuit layer on a partial area of the upper surface of the photoelectric conversion element, the upper surface of the first patterned photoresist layer and the side surface of the first patterned photoresist layer, wherein the second metal circuit layer is coupled with the upper surface of the photoelectric conversion element; coating a second negative photoresist on the entire surface to cover the upper surface of the first patterned photoresist layer, the exposed part of the upper surface of the photoelectric conversion element and the partial region of the second metal circuit layer; exposing the first patterned photoresist layer and the second negative photoresist layer from the lower part of the transparent substrate to the upper part; developing the second negative photoresist to form a second patterned photoresist layer, wherein the second patterned photoresist layer forms an opening relative to the area above the photoelectric conversion element, and the opening exposes the exposed part of the upper surface of the photoelectric conversion element; removing the light-transmitting substrate; forming a first metal circuit layer coupled to the lower surface of the photoelectric conversion element; in an embodiment of the present invention, after the step of forming the second metal circuit layer on the partial region of the upper surface of the photoelectric conversion device, the upper surface of the first patterned photoresist layer, and the side surface of the first patterned photoresist layer, wherein the second metal circuit layer is coupled to the upper surface of the photoelectric conversion device, the method further includes a step of forming a spacer on another partial region of the upper surface of the photoelectric conversion device.

Based on the objective of the present invention, the present invention provides a method for manufacturing an optical communication module, which sequentially comprises the steps of providing a transparent substrate and a photoelectric conversion device, wherein the photoelectric conversion device is disposed above the transparent substrate; coating a first negative photoresist on the peripheral region of the photoelectric conversion element and the upper surface of the photoelectric conversion element; exposing the first negative photoresist from the lower part of the transparent substrate to the upper part; developing the first negative photoresist to form a first patterned photoresist layer, wherein the first patterned photoresist layer is formed in the peripheral area of the photoelectric conversion element and exposes the upper surface of the photoelectric conversion element; coating a second negative photoresist on the entire surface to cover the upper surface of the first patterned photoresist layer and the exposed portion of the upper surface of the photoelectric conversion element; exposing the first patterned photoresist layer and the second negative photoresist layer from the lower part of the light-transmitting substrate upwards; developing the second negative photoresist to form a second patterned photoresist layer, wherein the second patterned photoresist layer forms an opening relative to the area above the photoelectric conversion element, and the opening exposes the exposed part of the upper surface of the photoelectric conversion element; in an embodiment of the present invention, after the step of developing the first negative photoresist to form the first patterned photoresist layer, the first patterned photoresist layer being formed in the peripheral region of the photoelectric conversion element and exposing the upper surface of the photoelectric conversion element, the method further includes the step of forming spacers in the partial region of the upper surface of the photoelectric conversion element.

In an embodiment of the invention, the transparent substrate is a transparent sheet or a filter.

In an embodiment of the invention, the photoelectric conversion device is a laser device or a light receiving device.

In an embodiment of the invention, a method of forming the first metal circuit layer is chemical vapor deposition or physical vapor deposition.

In an embodiment of the invention, a method of forming the second metal circuit layer is chemical vapor deposition or physical vapor deposition.

In an embodiment of the invention, the photoelectric conversion element has a square or rectangular parallelepiped shape, and the aperture of the photoelectric conversion element is located at a center position of an upper surface of the photoelectric conversion element.

In an embodiment of the invention, the material of the first metal circuit layer is gold, silver, copper, iron, aluminum, molybdenum, titanium, tungsten, nickel, cobalt, ruthenium or indium tin oxide.

In an embodiment of the invention, the width of the metal line of the first metal line layer is 100 μm, and the thickness is 2-5 μm.

In an embodiment of the invention, the second metal circuit layer is made of gold, silver, copper, iron, aluminum, molybdenum, titanium, tungsten, nickel, cobalt, ruthenium or indium tin oxide.

In an embodiment of the invention, the metal line of the second metal line layer has a width of 100 μm and a thickness of 2-5 μm.

In an embodiment of the invention, the first negative photoresist and the second negative photoresist are benzocyclobutene (BCB).

Drawings

Fig. 1 is a schematic cross-sectional view of a first aspect of an optical communication module.

Fig. 2 is a step diagram of a method for manufacturing an optical communication module according to a first aspect.

Fig. 3 is a schematic cross-sectional view of step S101 in the manufacturing method of the optical communication module according to the first aspect.

Fig. 4 is a schematic cross-sectional view illustrating a step S102 in the manufacturing method of the optical communication module according to the first aspect.

Fig. 5 is a schematic cross-sectional view illustrating step S103 in the manufacturing method of the optical communication module according to the first aspect.

Fig. 6 is a schematic cross-sectional view illustrating step S104 in the manufacturing method of the optical communication module according to the first aspect.

Fig. 7 is a schematic cross-sectional view illustrating a step S105 in the manufacturing method of the optical communication module according to the first aspect.

Fig. 8 is a schematic cross-sectional view illustrating step S106 in the manufacturing method of the optical communication module according to the first aspect.

Fig. 9 is a schematic cross-sectional view of step S107 in the manufacturing method of the optical communication module according to the first aspect.

Fig. 10 is a schematic cross-sectional view illustrating a step S108 of a first method for manufacturing an optical communication module.

Fig. 11 is a cross-sectional view of a second aspect of an optical communication module.

Fig. 12 is a schematic cross-sectional view of a third embodiment of an optical communication module.

Fig. 13 is a process diagram of a second aspect of a method for manufacturing an optical communication module.

Fig. 14 is a process diagram of a method for manufacturing the third optical communication module.

Fig. 15 is a schematic cross-sectional view of an optical communication module according to a fourth aspect.

Fig. 16 is a process diagram of a fourth aspect of a method for manufacturing an optical communication module.

Fig. 17 is a schematic cross-sectional view of an optical communication module according to a fifth aspect.

Fig. 18 is a process diagram of a fifth aspect of a method for manufacturing an optical communication module.

The reference signs are:

10 light-transmitting substrate

20 first metal wiring layer

22 second metal wiring layer

30 photoelectric conversion element

40 first negative photoresist

42 second negative photoresist

50 spacer

60 Exposure light source

62 exposure light

70 first patterned photoresist layer

72 second patterned photoresist layer

80. Opening(s)

S101 to S109

S201 to S208

S301 to S309

S401 to S411 steps

S501-S510 steps

Detailed Description

In order to make the content of the present invention easily understood by those skilled in the art, the present invention will be further described with reference to the following embodiments and the accompanying drawings, wherein each embodiment is only used for describing the technical features of the present invention, and the content mentioned is not a limitation of the present invention.

Reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment. Thus, the appearances of the phrase "an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

In the description of the present invention, it should be noted that the terms "upper", "lower", "left", "right", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of the present application, but do not indicate or imply that the device or component indicated must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.

The terms "first" and "second" in the description of the present invention are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

Referring to fig. 1, fig. 1 is a cross-sectional view of a first aspect of an optical communication module, wherein the optical communication module includes a transparent substrate 10, a first metal circuit layer 20, a photoelectric conversion device 30, a spacer 50, a first patterned photoresist layer 70, a second metal circuit layer 22, and a second patterned photoresist layer 72; wherein the first metal circuit layer 20 is disposed on a partial region of the upper surface of the transparent substrate 10, the photoelectric conversion device 30 is disposed above the transparent substrate 10, and the lower surface of the photoelectric conversion device 30 is coupled to the first metal circuit layer 20; wherein the first patterned photoresist layer 70 is formed in the peripheral region of the photoelectric conversion element 30, and the peripheral region of the photoelectric conversion element 30 includes a partial region of the first metal line layer 20; wherein the second metal circuit layer 22 is distributed on a partial region of the upper surface of the photoelectric conversion device 30, the upper surface of the first patterned photoresist layer 70 and the side surface of the first patterned photoresist layer 70, and the second metal circuit layer 22 is coupled to the upper surface of the photoelectric conversion device 30; wherein the spacer 50 is provided in another partial region of the upper surface of the photoelectric conversion element 30; wherein the second patterned photoresist layer 72 is formed on the upper surface of the first patterned photoresist layer 70 and covers a portion of the area of the second metal line layer 22, and the second patterned photoresist layer 72 forms an opening 80 with respect to the area above the photoelectric conversion element 30, the opening 80 exposes the exposed portion of the upper surface of the photoelectric conversion element 30 and the spacer 50, wherein the exposed portion of the upper surface of the photoelectric conversion element 30 refers to the area of the upper surface of the photoelectric conversion element 30 not covered by the second metal line layer 22 and the spacer 50; the area of the first metal circuit layer 20 away from the photoelectric conversion element 30 and not covered by the first patterned photoresist layer 70, and the area of the second metal circuit layer 22 away from the photoelectric conversion element 30 and not covered by the first patterned photoresist layer 70 are both used for coupling with a printed circuit board (not shown) so as to transmit an electrical signal transmitted by the printed circuit board (not shown) to the photoelectric conversion element 30, convert the electrical signal into an optical signal through the photoelectric conversion element 30, and output the optical signal through the aperture of the photoelectric conversion element 30; wherein the first patterned photoresist layer 70 is a patterned photoresist layer formed by exposing and developing the first negative photoresist 40; wherein the second patterned photoresist layer 72 is a patterned photoresist layer formed by exposing and developing the second negative photoresist 42; wherein the first patterned photoresist layer 70 and the second patterned photoresist layer 72 are used as dielectrics for encapsulating the photoelectric conversion element 30; the photoelectric conversion element 30 is used for performing electro-optical conversion, and converting a received electric signal into an optical signal; the spacer 50 is used for spacing the photoelectric conversion element 30 and the optical fiber (not shown) inserted into the opening 80, and the spacer 50 does not shield the aperture of the photoelectric conversion element 30, so that the optical signal of the photoelectric conversion element 30 can be transmitted to the optical fiber (not shown) inserted into the opening 80; wherein the exposure light 62 generated by the exposure light source 60 passes through the transparent substrate 10 and irradiates the first negative photoresist 40 and the second negative photoresist 42, and the first negative photoresist 40 and the second negative photoresist 42 are cured by a cross-linking reaction.

Referring to fig. 1 to 10, the steps of the first aspect of the manufacturing method for providing an optical communication module of the present invention sequentially include step S101, step S102, step S103, step S104, step S105, step S106, step S107, step S108, and step S109, which are described in detail with reference to the accompanying drawings.

Referring to fig. 2 and 3, step S101: providing a transparent substrate 10, a first metal circuit layer 20 and a photoelectric conversion element 30, wherein the first metal circuit layer 20 is formed on a partial region of the upper surface of the transparent substrate 10, the photoelectric conversion element 30 is disposed above the transparent substrate 10, and the lower surface of the photoelectric conversion element 30 is coupled to the first metal circuit layer 20; the method for forming the first metal circuit layer 20 may be chemical vapor deposition or physical vapor deposition; the photoelectric conversion element 30 is disposed above the transparent substrate 10 by using conductive adhesive die bonding, ball-mounted flip chip or surface mount technology, so that the lower surface of the photoelectric conversion element 30 is coupled to the first metal circuit layer 20.

Referring to fig. 2 and 4, step S102: coating a first negative photoresist 40 on the peripheral region of the photoelectric conversion element 30 and the upper surface of the photoelectric conversion element 30, wherein the peripheral region of the photoelectric conversion element 30 includes a partial region of the first metal wiring layer 20, that is, the photoelectric conversion element 30 and the partial region of the first metal wiring layer 20 are covered by the first negative photoresist 40; the area of the first metal line layer 20 not covered by the first negative photoresist 40 is used for coupling with a printed circuit board (not shown) to receive electrical signals from the printed circuit board (not shown).

Referring to fig. 2 and 5, step S103: exposing the first negative photoresist 40 upward from below the transparent substrate 10; in the exposure, an exposure light source 60 is used to generate an exposure light 62, the exposure light 62 passes through the transparent substrate 10 and then irradiates the first photoresist 40, and the first photoresist 40 generates a cross-linking reaction, and the photoelectric conversion element 30 located above the transparent substrate 10 blocks the exposure light 62, so that the first photoresist 40 located above the photoelectric conversion element 30 cannot be exposed, and therefore, when a developer is subsequently used for development, compared with the exposed first photoresist 40 located in the surrounding area of the photoelectric conversion element 30, the first photoresist 40 located above the photoelectric conversion element 30 cannot be exposed and is more easily dissolved in the developer.

Referring to fig. 2 and 6, step S104: developing the first negative photoresist 40 to form a first patterned photoresist layer 70, the first patterned photoresist layer 70 being formed in a peripheral region of the photoelectric conversion element 30 and exposing an upper surface of the photoelectric conversion element 30; wherein the developing is to dissolve the first negative photoresist 40 with a developer, since the first negative photoresist 40 located in the area above the photoelectric conversion element 30 is not exposed to light, and thus is dissolved by the developer, and the upper surface of the photoelectric conversion element 30 is exposed, and further to facilitate the subsequent arrangement of the metal wiring, after the first negative photoresist 40 located in the area above the photoelectric conversion element 30 is dissolved in the developer, the first negative photoresist 40 located in the surrounding area of the photoelectric conversion element 30 is continuously dissolved with the developer, so that the height of the upper surface of the first negative photoresist 40 located in the surrounding area of the photoelectric conversion element 30 is the same as the height of the upper surface of the photoelectric conversion element 30, and then the developer is removed to form the first patterned photoresist layer 70, so that the first patterned photoresist layer 70 is located in the surrounding area of the photoelectric conversion element 30, and the upper surface of the first patterned photoresist layer 70 is the same as the height of the upper surface of the photoelectric conversion element 30, and the upper surface of the photoelectric conversion element 30 is exposed; this is only a preferred embodiment, and the actual implementation is not limited thereto, and the height of the upper surface of the first patterned photoresist layer 70 in the peripheral region of the photoelectric conversion element 30 may be higher than the height of the upper surface of the photoelectric conversion element 30 or lower than the height of the upper surface of the photoelectric conversion element 30 according to the practical requirements.

Referring to fig. 2 and 7, step S105: forming a second metal circuit layer 22 on a partial region of the upper surface of the photoelectric conversion element 30, the upper surface of the first patterned photoresist layer 70 and the side surface of the first patterned photoresist layer 70, wherein the second metal circuit layer 22 is coupled to the upper surface of the photoelectric conversion element 30; the method for forming the second metal circuit layer 22 may be chemical vapor deposition or physical vapor deposition.

Referring to fig. 2 and 8, step S106: forming a spacer 50 on another partial region of the upper surface of the photoelectric conversion element 30; the spacer 50 may be formed on the upper surface of the photoelectric conversion element 30 by exposing a positive photoresist, or may be formed on the upper surface of the photoelectric conversion element 30 by a striker spraying method or a glue dispensing method using various resins such as epoxy resin or acrylic resin; the size of the spacer 50 may be the same as the size of the photoelectric conversion element 30 or different from the size of the photoelectric conversion element 30, and the size of the spacer 50 is smaller than the size of the photoelectric conversion element 30 in the embodiment of the present invention as an example.

Referring to fig. 2 and 9, step S107: coating the second negative photoresist 42 entirely to cover the upper surface of the first patterned photoresist layer 70, the exposed portion of the upper surface of the photoelectric conversion element 30, the spacer 50 and a partial region of the second metal wiring layer 22; the area of the second metal circuit layer 22 not covered by the second negative photoresist 42 is used for coupling with a printed circuit board (not shown) to receive electrical signals from the printed circuit board (not shown).

Referring to fig. 2 and 10, step S108: the first patterned photoresist layer 70 and the second negative photoresist 42 are exposed from the bottom of the transparent substrate 10.

Referring back to fig. 1 and 2, step S109: developing the second negative photoresist 42 to form a second patterned photoresist layer 72, wherein the second patterned photoresist layer 72 forms an opening 80 with respect to the region above the photoelectric conversion element 30, and the opening 80 exposes the exposed portion of the upper surface of the photoelectric conversion element 30 and the spacer 50; wherein the developing is to dissolve the second photoresist 42 by using a developer, since the second photoresist 42 located in the region above the photoelectric conversion element 30 is not exposed to light, the second photoresist 42 forms an opening 80 with respect to the region above the photoelectric conversion element 30, and the opening 80 exposes the exposed portion of the upper surface of the photoelectric conversion element 30 and the spacer 50, so that the optical fiber (not shown) can be directly coupled through the insertion opening 80; in the manufacturing method of the first aspect of the optical communication module, the exposed portion of the upper surface of the photoelectric conversion element 30 refers to an area of the upper surface of the photoelectric conversion element 30 not covered by the second metal line layer 22 and the spacer 50.

Referring to fig. 1 and 2, in an embodiment of the invention, a manufacturing method of a first aspect of an optical communication module is further provided, which is substantially the same as the manufacturing method of the first aspect of the optical communication module, except that the description about the spacer 50 is not included, i.e., step S106 is not required, and the description about the spacer 50 is removed in step S107 and step S109, and since no spacer 50 is formed on the upper surface of the photoelectric conversion element 30, the exposed portion of the upper surface of the photoelectric conversion element 30 refers to an area where the upper surface of the photoelectric conversion element 30 is not covered by the second metal wiring layer 22, so step S107 becomes "coating the second negative photoresist 42 entirely to cover the upper surface of the first patterned photoresist layer 70, the exposed portion of the upper surface of the photoelectric conversion element 30, and a partial area of the second metal wiring layer 22; the area of the second metal circuit layer 22 not covered by the second negative photoresist 42 is used for coupling with a printed circuit board (not shown) to receive electrical signals from the printed circuit board (not shown). Step S109 becomes "developing the second negative photoresist 42 to form a second patterned photoresist layer 72, and the second patterned photoresist layer 72 forms an opening 80 with respect to the region above the photoelectric conversion element 30, the opening 80 exposing the exposed portion of the upper surface of the photoelectric conversion element 30; wherein the developing is to dissolve the second photoresist 42 by using a developer, since the second photoresist 42 located in the region above the photoelectric conversion element 30 is not exposed to light, the second photoresist 42 forms an opening 80 with respect to the region above the photoelectric conversion element 30, and the opening 80 exposes the exposed portion of the upper surface of the photoelectric conversion element 30, so that the optical fiber (not shown) can be directly coupled through the insertion opening 80 ".

Referring to fig. 11, fig. 11 is a cross-sectional view of a second aspect of an optical communication module, which is different from the first aspect in that the second aspect does not include the second metal circuit layer 22.

Referring to fig. 12, fig. 12 is a cross-sectional view of a third aspect of the optical communication module, which is different from the first aspect in that the third aspect does not include the first metal circuit layer 20.

Referring to fig. 11 and 13, the steps of the second aspect of the method for manufacturing an optical communication module according to the present invention sequentially include step S201, step S202, step S203, step S204, step S205, step S206, step S207, and step S208, which are substantially the same as the first aspect of the method for manufacturing an optical communication module, except that the step of forming the second metal wiring layer 22 is not included; step S201 is to provide a transparent substrate 10, a first metal circuit layer 20 and a photoelectric conversion device 30, wherein the first metal circuit layer 20 is formed on a partial region of an upper surface of the transparent substrate 10, the photoelectric conversion device 30 is disposed above the transparent substrate 10, and a lower surface of the photoelectric conversion device 30 is coupled to the first metal circuit layer 20; the method for forming the first metal circuit layer 20 may be chemical vapor deposition or physical vapor deposition; the photoelectric conversion element 30 is disposed above the transparent substrate 10 by using conductive adhesive die bonding, ball-mounting flip chip or surface mounting technology, so that the lower surface of the photoelectric conversion element 30 is coupled to the first metal circuit layer 20; in step S202, a first negative photoresist 40 is applied to the peripheral region of the photoelectric conversion element 30 and the upper surface of the photoelectric conversion element 30, wherein the peripheral region of the photoelectric conversion element 30 includes a partial region of the first metal line layer 20; wherein, in step S203, the first negative photoresist 40 is exposed from the bottom of the transparent substrate 10 to the top; in step S204, the first negative photoresist 40 is developed to form a first patterned photoresist layer 70, and the first patterned photoresist layer 70 is formed in the peripheral region of the photoelectric conversion element 30 and exposes the upper surface of the photoelectric conversion element 30; wherein the step S205 is to form the spacer 50 on a partial region of the upper surface of the photoelectric conversion element 30; in step S206, a second negative photoresist 42 is coated to cover the upper surface of the first patterned photoresist layer 70, the exposed portion of the upper surface of the photoelectric conversion element 30 and the spacer 50; in step S207, the first patterned photoresist layer 70 and the second negative photoresist 42 are exposed from the bottom of the transparent substrate 10; in step S208, the second negative photoresist 42 is developed to form a second patterned photoresist layer 72, and the second patterned photoresist layer 72 forms an opening 80 with respect to the region above the photoelectric conversion element 30, the opening 80 exposing the exposed portion of the upper surface of the photoelectric conversion element 30 and the spacer 50; since the method for manufacturing the optical communication module according to the second aspect does not include the step of forming the second metal wiring layer 22, the exposed portion of the upper surface of the photoelectric conversion element 30 refers to a region of the upper surface of the photoelectric conversion element 30 not covered by the spacer 50.

Referring to fig. 11 and 13, in an embodiment of the invention, a method for manufacturing a second aspect of an optical communication module without a spacer 50 is further provided, which is substantially identical to the method for manufacturing the second aspect of the optical communication module, except that the description of the spacer 50 is not included, i.e., step S205 is not required, and the descriptions of the spacer 50 are removed in steps S206 and S208, and since no spacer 50 is formed on the upper surface of the photoelectric conversion element 30, the exposed portion of the upper surface of the photoelectric conversion element 30 is the upper surface of the photoelectric conversion element 30, step S206 is changed to "fully coat the second negative photoresist 42 to cover the upper surface of the first patterned photoresist layer 70 and the exposed portion of the upper surface of the photoelectric conversion element 30", and step S208 is changed to "develop the second negative photoresist 42 to form a second patterned photoresist layer 72, and the second patterned photoresist layer 72 forms an opening 80 with respect to the area above the photoelectric conversion element 30, and the opening 80 exposes the exposed portion of the upper surface of the photoelectric conversion element 30".

Referring to fig. 12 and 14, the present invention provides a method for manufacturing an optical communication module of a third aspect, which includes steps S301, S302, S303, S304, S305, S306, S307, S308, and S309 in sequence, and the steps are substantially the same as the method for manufacturing the optical communication module of the first aspect except that the step of forming the first metal line layer 20 is not included; in step S301, a transparent substrate 10 and a photoelectric conversion device 30 are provided, and the photoelectric conversion device 30 is disposed on the upper surface of the transparent substrate 10; wherein, in step S302, a first negative photoresist 40 is coated on the peripheral region of the photoelectric conversion element 30 and the upper surface of the photoelectric conversion element 30; in step S303, the first negative photoresist 40 is exposed from the bottom of the transparent substrate 10 to the top; in step S304, the first negative photoresist 40 is developed to form a first patterned photoresist layer 70, the first patterned photoresist layer 70 is formed in the peripheral region of the photoelectric conversion element 30, and the upper surface of the photoelectric conversion element 30 is exposed; in step S305, a second metal circuit layer 22 is formed on a partial region of the upper surface of the photoelectric conversion device 30, the upper surface of the first patterned photoresist layer 70 and the side surface of the first patterned photoresist layer 70, and the second metal circuit layer 22 is coupled to the upper surface of the photoelectric conversion device 30; wherein the step S306 is to form the spacer 50 on another partial region of the upper surface of the photoelectric conversion element 30; in step S307, a second negative photoresist 42 is coated over the entire surface to cover the upper surface of the first patterned photoresist layer 70, the exposed portion of the upper surface of the photoelectric conversion element 30, the spacer 50 and a portion of the second metal wiring layer 22; in step S308, the first patterned photoresist layer 70 and the second negative photoresist 42 are exposed from the bottom of the transparent substrate 10; in step S309, the second negative photoresist 42 is developed to form a second patterned photoresist layer 72, and the second patterned photoresist layer 72 forms an opening 80 with respect to the region above the photoelectric conversion element 30, the opening 80 exposing the exposed portion of the upper surface of the photoelectric conversion element 30 and the spacer 50; in the method for manufacturing the third aspect of the optical communication module, the exposed portion of the upper surface of the photoelectric conversion element 30 refers to a region of the upper surface of the photoelectric conversion element 30 not covered by the second metal wiring layer 22 and the spacer 50.

Referring to fig. 12 and 14, in an embodiment of the present invention, a method for manufacturing a third aspect of an optical communication module that does not include the spacer 50 is further provided, which is substantially identical to the method for manufacturing the third aspect of the optical communication module except that the description about the spacer 50 is not included, i.e., step S306 is not required, and the description about the spacer 50 is removed in steps S307 and S309, and since no spacer 50 is formed on the upper surface of the photoelectric conversion element 30, the exposed portion of the upper surface of the photoelectric conversion element 30 refers to a region where the upper surface of the photoelectric conversion element 30 is not covered by the second metal wiring layer 22, so step S307 becomes "coating the second negative photoresist 42 all over to cover the upper surface of the first patterned photoresist layer 70, the exposed portion of the upper surface of the photoelectric conversion element 30, and a partial region of the second metal wiring layer 22", and step S309 becomes "developing the second negative photoresist 42 to form the second patterned photoresist layer 72, and the exposed portion of the upper surface of the photoelectric conversion element 30 is exposed to a region of the opening 80 above the photoelectric conversion element 30".

Referring to fig. 1, fig. 2, fig. 11, fig. 12, fig. 13, and fig. 14, in an embodiment of the present invention, the first, second, and third aspects of the optical communication module may also be aspects that do not include the transparent substrate 10, and thus the method for manufacturing the optical communication module of the first aspect may further include a step of removing the transparent substrate 10 after step S109, the method for manufacturing the optical communication module of the second aspect after step S208, and the method for manufacturing the optical communication module of the third aspect after step S309 are completed.

Referring to fig. 15, in another embodiment of the present invention, in the manufacturing method of the first aspect of the optical communication module, the first metal circuit layer 20 may be formed after the transparent substrate 10 is removed, and since the first metal circuit layer 20 is formed after the transparent substrate 10, the first metal circuit layer 20 is formed on the lower surface of the photoelectric conversion element 30 and the lower surface of the first patterned photoresist layer 70, and the first metal circuit layer is coupled to the lower surface of the photoelectric conversion element 30, which will be referred to as a fourth aspect of the optical communication module hereinafter.

Referring to fig. 15 and 16, a manufacturing method of a fourth aspect of the optical communication module is substantially the same as the manufacturing method of the first aspect of the optical communication module, except that the method further includes a step of removing the transparent substrate 10, and the first metal circuit layer 20 is formed after removing the transparent substrate 10, and since the first metal circuit layer 20 does not exist when the photoelectric conversion element 30 is disposed, the photoelectric conversion element 30 is disposed above the transparent substrate 10 by using a transparent adhesive material, where the transparent adhesive material may be a solid optical adhesive or a liquid optical adhesive, and the steps sequentially include step S401, step S402, step S403, step S404, step S405, step S406, step S407 and step S408, step S409, step S410, and step S411, where step S401 is to provide the transparent substrate 10 and the photoelectric conversion element 30, and the photoelectric conversion element 30 is disposed above the transparent substrate 10; in step S402, a first negative photoresist 40 is coated on the peripheral region of the photoelectric conversion element 30 and the upper surface of the photoelectric conversion element 30, so that the photoelectric conversion element 30 is covered by the first negative photoresist 40; wherein, in step S403, the first negative photoresist 40 is exposed from the bottom of the transparent substrate 10 to the top; in step S404, the first negative photoresist 40 is developed to form a first patterned photoresist layer 70, the first patterned photoresist layer 70 is formed in the peripheral region of the photoelectric conversion element 30, and the upper surface of the photoelectric conversion element 30 is exposed; in step S405, a second metal circuit layer 22 is formed on a partial region of the upper surface of the photoelectric conversion device 30, the upper surface of the first patterned photoresist layer 70, and a side surface of the first patterned photoresist layer 70, and the second metal circuit layer 22 is coupled to the upper surface of the photoelectric conversion device 30; step S406 is to form the spacer 50 on another partial region of the upper surface of the photoelectric conversion element 30; in step S407, a second negative photoresist 42 is coated to cover the upper surface of the first patterned photoresist layer 70, the exposed portion of the upper surface of the photoelectric conversion element 30, the spacer 50 and a portion of the second metal wiring layer 22; in step S408, the first patterned photoresist layer 70 and the second negative photoresist 42 are exposed from the bottom of the transparent substrate 10; in step S409, the second negative photoresist 42 is developed to form a second patterned photoresist layer 72, and the second patterned photoresist layer 72 forms an opening 80 with respect to the region above the photoelectric conversion element 30, the opening 80 exposing the exposed portion of the upper surface of the photoelectric conversion element 30 and the spacer 50; the exposed portion of the upper surface of the photoelectric conversion element 30 refers to a region of the upper surface of the photoelectric conversion element 30 not covered by the second metal line layer 22 and the spacer 50; wherein step S410 is to remove the transparent substrate 10; in step S411, a first metal circuit layer 20 is formed, wherein the first metal circuit layer 20 is coupled to the lower surface of the photoelectric conversion element 30.

Referring to fig. 15 and 16, the present invention further provides a method for manufacturing a fourth aspect of an optical communication module that does not include the spacer 50, which is substantially identical to the method for manufacturing the fourth aspect of the optical communication module, except that the description about the spacer 50 is not included, i.e., step S406 is not required, and the description about the spacer 50 is removed in steps S407 and S409, and since no spacer 50 is formed on the upper surface of the photoelectric conversion element 30, the exposed portion of the upper surface of the photoelectric conversion element 30 refers to a region where the upper surface of the photoelectric conversion element 30 is not covered by the second metal wiring layer 22, so step S407 becomes "to entirely coat the second negative photoresist 42 to cover the upper surface of the first patterned photoresist layer 70, the exposed portion of the upper surface of the photoelectric conversion element 30, and a partial region of the second metal wiring layer 22", and step S409 becomes "to develop the second negative photoresist 42 to form the second patterned photoresist layer 72, and the second patterned photoresist layer 72 forms an opening 80 with respect to the region above the photoelectric conversion element 30, and the exposed portion of the upper surface of the photoelectric conversion element 30".

Referring to fig. 17 and 18, in another embodiment of the invention, in the method for manufacturing the second aspect of the optical communication module, after the transparent substrate 10 is removed, the first metal circuit layer 20 is formed, and since the first metal circuit layer 20 is formed after the transparent substrate 10, the first metal circuit layer 20 is formed on the lower surface of the photoelectric conversion element 30 and the lower surface of the first patterned photoresist layer 70, and the first metal circuit layer is coupled to the lower surface of the photoelectric conversion element 30, which will be referred to as a fifth aspect of the optical communication module hereinafter.

Referring to fig. 17 and 18, a fifth aspect of the optical communication module is substantially the same as the second aspect of the optical communication module, except that the method further includes a step of removing the transparent substrate 10, the first metal circuit layer 20 is formed after removing the transparent substrate 10, and the first metal circuit layer 20 does not exist when the photoelectric conversion element 30 is disposed, so that the photoelectric conversion element 30 is disposed above the transparent substrate 10 by using a transparent adhesive material, where the transparent adhesive material may be a solid optical adhesive or a liquid optical adhesive, the steps sequentially include step S501, step S502, step S503, step S504, step S505, step S506, step S507, step S508, step S509, and step S510, the step S501 is to provide the transparent substrate 10 and the photoelectric conversion element 30, and the photoelectric conversion element 30 is disposed above the transparent substrate 10; wherein step S502 is to coat the first negative photoresist 40 on the peripheral region of the photoelectric conversion element 30 and the upper surface of the photoelectric conversion element 30; wherein, in step S503, the first negative photoresist 40 is exposed from the bottom of the transparent substrate 10 to the top; in step S504, the first negative photoresist 40 is developed to form a first patterned photoresist layer 70, and the first patterned photoresist layer 70 is formed in the peripheral region of the photoelectric conversion element 30 and exposes the upper surface of the photoelectric conversion element 30; wherein, in step S505, the spacers 50 are formed on a partial region of the upper surface of the photoelectric conversion element 30; in step S506, the second negative photoresist 42 is coated over the entire surface to cover the upper surface of the first patterned photoresist layer 70, the exposed portion of the upper surface of the photoelectric conversion element 30 and the spacer 50; in step S507, the first patterned photoresist layer 70 and the second negative photoresist 42 are exposed from the bottom of the transparent substrate 10; in step S508, the second negative photoresist 42 is developed to form a second patterned photoresist layer 72, and the second patterned photoresist layer 72 forms an opening 80 with respect to the region above the photoelectric conversion element 30, the opening 80 exposing the exposed portion of the upper surface of the photoelectric conversion element 30 and the spacer 50; wherein since the step of forming the second metal wiring layer 22 is not included, the exposed portion of the upper surface of the photoelectric conversion element 30 refers to a region where the upper surface of the photoelectric conversion element 30 is not covered with the spacer 50; wherein step S509 is to remove the transparent substrate 10; in step S510, a first metal circuit layer 20 is formed, wherein the first metal circuit layer 20 is coupled to the lower surface of the photoelectric conversion element 30.

The present invention further provides a method for manufacturing a fifth aspect of an optical communication module, which does not include the spacer 50, and the manufacturing method is substantially the same as the method for manufacturing the fifth aspect of the optical communication module, except that the description about the spacer 50 is not included, that is, step S505 is not required, and the descriptions about the spacer 50 are removed in steps S506 and S508, and since no spacer 50 is formed on the upper surface of the photoelectric conversion element 30, the exposed portion of the upper surface of the photoelectric conversion element 30 is the upper surface of the photoelectric conversion element 30, step S506 becomes "coating the second negative photoresist 42 entirely to cover the upper surface of the first patterned photoresist layer 70 and the exposed portion of the upper surface of the photoelectric conversion element 30", and step S508 becomes "wherein step S508 develops the second negative photoresist layer 42 to form the second patterned photoresist layer 72, and the second patterned photoresist layer 72 forms an opening 80 with respect to the area above the photoelectric conversion element 30, and the opening 80 exposes the exposed portion of the upper surface of the photoelectric conversion element 30; wherein step S509 is to remove the transparent substrate 10; in step S510, a first metal circuit layer 20 is formed, wherein the first metal circuit layer 20 is coupled to the lower surface of the photoelectric conversion element 30. "to be used in the specification.

In one embodiment, the second patterned photoresist layer 72 may be processed to adjust the configuration of the opening 80 of the optical communication module according to practical requirements.

In the preferred embodiment of the present invention, in the manufacturing method of the first aspect, the manufacturing method of the second aspect, and the manufacturing method of the third aspect of the optical communication module, the shape of the photoelectric conversion element 30 is a symmetrical shape such as a square or a rectangular parallelepiped, and the aperture of the photoelectric conversion element 30 is located at the center of the upper surface of the photoelectric conversion element 30, so that when an optical fiber (not shown) is inserted into the opening 80, the aperture of the photoelectric conversion element 30 is directly aligned with the aperture of the photoelectric conversion element 30, but in practice, the shape of the photoelectric conversion element 30 may be other shapes, and the aperture position of the photoelectric conversion element 30 may be adjusted according to practical requirements.

In an embodiment of the present invention, in the method for manufacturing an optical communication module of the first aspect, the method for manufacturing an optical communication module of the second aspect, and the method for manufacturing an optical communication module of the third aspect, wherein the transparent substrate 10 may be a transparent sheet or an optical filter according to the types of the first photoresist 40 and the second photoresist 42, wherein the transparent sheet refers to a transparent sheet that allows all wavelengths of light to pass through, such as a transparent glass sheet or a transparent plastic sheet, and the optical filter may be an ultraviolet band pass sheet, a visible band pass sheet, or an infrared band pass sheet, but is not limited thereto, and the wavelength range of the light to be filtered may also be adjusted according to the wavelength of the light required for exposure.

In an embodiment of the present invention, the first negative photoresist 40 and the second negative photoresist 42 are Benzocyclobutene (BCB), wherein the transparent substrate 10 is an ultraviolet light band-pass sheet, and the exposure light source 60 is a mercury lamp.

In an embodiment of the invention, the material of the first metal circuit layer 20 and the material of the second metal circuit layer 22 may be gold, silver, copper, iron, aluminum, molybdenum, titanium, tungsten, nickel, cobalt, ruthenium, or indium tin oxide.

In an embodiment of the invention, the photoelectric conversion element 30 may be a laser device or a light receiving device, wherein the laser device may be a vertical-cavity surface-emitting laser (VCSEL), a Laser Diode (LD), a Photodiode (PD), or the like, and the light receiving device may be a photodiode or the like.

In an embodiment of the present invention, the width of the metal circuit of the first metal circuit layer 20 is 100 μm, and the thickness is 2-5 μm, but the present invention is not limited thereto, and the width and the thickness can be adjusted according to practical requirements.

In an embodiment of the present invention, the width of the metal circuit of the second metal circuit layer 22 is 100 μm, and the thickness is 2-5 μm, but the present invention is not limited thereto, and the width and the thickness can be adjusted according to practical requirements.

The invention is characterized in that the photoelectric conversion element is used for shading light to replace the function of a high-precision light shield in the existing mode of manufacturing the transmitting module by a photoetching method, thereby saving the time for designing the high-precision light shield and the production cost of money.

Claims

1. A method for manufacturing an optical communication module, comprising the steps of:

providing a transparent substrate, a first metal circuit layer and a photoelectric conversion element, wherein the first metal circuit layer is formed on a partial region of the upper surface of the transparent substrate, the photoelectric conversion element is arranged above the transparent substrate, and the lower surface of the photoelectric conversion element is coupled with the first metal circuit layer;

coating a first negative photoresist on a peripheral region of the photoelectric conversion element and an upper surface of the photoelectric conversion element, wherein the peripheral region of the photoelectric conversion element includes a partial region of the first metal wiring layer;

exposing the first negative photoresist upwards from the lower part of the light-transmitting substrate;

developing the first negative photoresist to form a first patterned photoresist layer, the first patterned photoresist layer being formed in the peripheral region of the photoelectric conversion element and exposing the upper surface of the photoelectric conversion element;

forming a second metal circuit layer on a partial region of the upper surface of the photoelectric conversion element, the upper surface of the first patterned photoresist layer and a side surface of the first patterned photoresist layer, wherein the second metal circuit layer is coupled to the upper surface of the photoelectric conversion element;

coating a second negative photoresist on the entire surface to cover the upper surface of the first patterned photoresist layer, the exposed portion of the upper surface of the photoelectric conversion element and a partial region of the second metal circuit layer;

exposing the first patterned photoresist layer and the second negative photoresist layer from the lower part of the light-transmitting substrate to the upper part;

developing the second negative photoresist to form a second patterned photoresist layer, and forming an opening in the second patterned photoresist layer relative to an area above the photoelectric conversion element, the opening exposing the exposed portion of the upper surface of the photoelectric conversion element.

2. The method of claim 1, further comprising a step of forming a spacer on another portion of the upper surface of the photoelectric conversion device after the step of forming a second metal wiring layer on a portion of the upper surface of the photoelectric conversion device, the upper surface of the first patterned photoresist layer, and a side surface of the first patterned photoresist layer, the second metal wiring layer being coupled to the upper surface of the photoelectric conversion device.

3. A method for manufacturing an optical communication module, comprising the steps of:

exposing the first negative photoresist from the lower part of the light-transmitting substrate to the upper part;

coating a second negative photoresist over the entire surface to cover an upper surface of the first patterned photoresist layer and the exposed portion of the upper surface of the photoelectric conversion element;

exposing the first patterned photoresist layer and the second negative photoresist layer from the lower part of the light-transmitting substrate upwards;

4. The method of manufacturing an optical communication module according to claim 3, further comprising the step of forming spacers on a partial region of the upper surface of the photoelectric conversion element after the step of developing the first negative photoresist to form a first patterned photoresist layer which is formed on the peripheral region of the photoelectric conversion element and exposes the upper surface of the photoelectric conversion element is completed.

5. A method for manufacturing an optical communication module, comprising the steps of:

providing a light-transmitting substrate and a photoelectric conversion element, wherein the photoelectric conversion element is arranged on the upper surface of the light-transmitting substrate;

coating a first negative photoresist on the peripheral area of the photoelectric conversion element and the upper surface of the photoelectric conversion element;

coating a second negative photoresist on the entire surface to cover the upper surface of the first patterned photoresist layer, the exposed part of the upper surface of the photoelectric conversion element and a partial region of the second metal circuit layer;

6. The method of claim 5, further comprising a step of forming a spacer on another portion of the upper surface of the photoelectric conversion device after the step of forming a second metal wiring layer on a portion of the upper surface of the photoelectric conversion device, the upper surface of the first patterned photoresist layer, and a side surface of the first patterned photoresist layer, the second metal wiring layer being coupled to the upper surface of the photoelectric conversion device.

7. The method of claim 1, 3 or 5, wherein after the steps are completed, further comprising the step of removing the transparent substrate.

8. A method for manufacturing an optical communication module, comprising the steps of:

providing a light-transmitting substrate and a photoelectric conversion element, wherein the photoelectric conversion element is arranged above the light-transmitting substrate;

developing the second negative photoresist to form a second patterned photoresist layer, and forming an opening in the second patterned photoresist layer relative to the area above the photoelectric conversion element, the opening exposing the exposed portion of the upper surface of the photoelectric conversion element;

removing the light-transmitting substrate;

and forming a first metal circuit layer which is coupled with the lower surface of the photoelectric conversion element.

9. The method of claim 8, further comprising forming spacers on another portion of the upper surface of the photoelectric conversion element after the step of forming a second metal wiring layer on a portion of the upper surface of the photoelectric conversion element, the upper surface of the first patterned photoresist layer, and the side surfaces of the first patterned photoresist layer, the second metal wiring layer being coupled to the upper surface of the photoelectric conversion element.

10. A method for manufacturing an optical communication module, comprising the steps of:

coating a second negative photoresist over the entire surface to cover the upper surface of the first patterned photoresist layer and the exposed portion of the upper surface of the photoelectric conversion element;

11. The method of manufacturing an optical communication module according to claim 10, further comprising the step of forming spacers on a partial region of the upper surface of the photoelectric conversion element after the step of developing the first negative photoresist to form a first patterned photoresist layer which is formed on the peripheral region of the photoelectric conversion element and exposes the upper surface of the photoelectric conversion element is completed.

12. The method of claim 1, 3, 5, 8 or 10, wherein the transparent substrate is a transparent sheet or a filter.

13. The method of claim 1, 3, 5, 8 or 10, wherein the photoelectric conversion element is a laser element or a light receiving element.