TWI816608B - Method for manufacturing optical communication module - Google Patents

Abstract

The present invention provides a method for manufacturing optical communication module. By using a photoelectric conversion element to block light to replace the role of a high-precision mask. The present invention solves the problem of increasing the production cost by designing a high-precision mask in the current method of preparing the optical communication module by the photolithography.

Description

Preparation method of optical communication module

The present invention relates to the field of optical communication, and in particular to a method for preparing an optical communication module.

The optical communication module is a communication module that performs photoelectric conversion. The optical communication module can be divided into a transmitting end and a receiving end. The transmitting end is used to convert electrical signals into optical signals, and the receiving end is used to convert optical signals into Electrical signals, and the transmitting end can be further divided into a transmitting module and an optical fiber, and the transmitting module is coupled to the optical fiber, and the transmitting module is coupled to the printed circuit board to receive the electrical signal transmitted by the printed circuit board. , and convert the received electrical signal into an optical signal, and the optical fiber is used to transmit the optical signal generated by the transmitting module, and the receiving end can be further divided into a receiving module and an optical fiber, and the receiving module and Optical fiber coupling, in which the receiving module is coupled to the printed circuit board to receive the optical signal transmitted by the optical fiber and convert the received optical signal into an electrical signal.

The current coupling technology for coupling optical communication modules to optical fibers can be divided into direct coupling and indirect coupling. Direct coupling technology allows optical fibers to be directly coupled to optical communication modules. Optical communication modules include dielectrics, photoelectric conversion components and metals. The circuit layer, wherein the photoelectric conversion element is located in the dielectric, and the metal circuit layer is coupled to the photoelectric conversion element, and the dielectric is provided with an opening to expose the upper surface of the photoelectric conversion element, and the upper surface of the photoelectric conversion element includes an aperture, The optical signal generated by the photoelectric conversion element is output through the aperture. Therefore, when the optical fiber is inserted into the opening provided on the dielectric, it can receive the optical signal transmitted by the photoelectric conversion element through the aperture and the light outlet, achieving the effect of direct coupling. Among them, optical communication The module is generally prepared by photo etching, wet etching or laser ablation; the photoelectric conversion element can be a laser element or a light receiving element.

One of the current ways to prepare optical communication modules by photolithography is to first configure photoelectric conversion elements on the substrate, and then coat dielectric materials around the photoelectric conversion elements and on the upper surface of the photoelectric conversion elements to make the dielectric The photoelectric conversion element is coated with a dielectric material, in which the dielectric material can be a positive photoresist or a negative photoresist. Then, a high-precision photomask is used to accurately position the photoelectric conversion element, and then the exposure light source is formed by a high-precision photomask. The dielectric is exposed from above. If the dielectric is a positive photoresist, there will be no cross-linking reaction in the exposed area. If the dielectric is a negative photoresist, there will be cross-linking reaction in the exposed area. The high-precision mask refers to a mask with an accuracy of 1 μm. The function of the high-precision mask is to prevent the dielectric above the corresponding photoelectric conversion element from producing a cross-linking reaction, so it can be developed during development. The agent dissolves the dielectric that has not produced cross-linking reaction above the photoelectric conversion element, thereby exposing the upper surface of the photoelectric conversion element, and then forms a metal circuit layer on the upper surface of the photoelectric conversion element, wherein the metal circuit layer is coupled to the photoelectric conversion element , in which the metal circuit layer is used to couple with the printed circuit board, so that the electrical signal transmitted by the printed circuit board can be transmitted to the photoelectric conversion element, and then a spacer (Spacer) is placed on the upper surface of the photoelectric conversion element, and then the medium is coated The electric substance is placed on the upper surface of the photoelectric conversion element and covers the spacer and part of the metal circuit layer. Then a high-precision photomask is used again to accurately position the photoelectric conversion element, and the exposure light source is directed through the upper part of the high-precision photomask. The dielectric is exposed to ensure that the dielectric corresponding to the upper surface of the photoelectric conversion element will not produce a cross-linking reaction. Therefore, during development, the dielectric will form an opening to expose the upper surface of the photoelectric conversion element and the spacer, and The subsequent optical fiber can be directly coupled through the insertion opening. When the photoelectric conversion element is a laser element, the optical fiber can receive the optical signal transmitted by the laser element. When the photoelectric conversion element is a light receiving element, the light receiving element is It can receive the optical signal transmitted by the optical fiber, and use spacers to separate the optical fiber and the photoelectric conversion element to avoid direct contact between the optical fiber and the photoelectric conversion element.

However, the current method of preparing optical communication modules by photoetching requires the use of high-precision masks in order to accurately position the photoelectric conversion elements, and the high-precision masks need to be designed according to the shape and size of the photoelectric conversion elements, resulting in The time and money required to design high-precision photomasks are high in production costs.

One purpose of the present invention is to improve the current problem of using a high-precision photomask to position the exposure position when preparing optical communication modules using photolithography, which increases production costs.

Based on the purpose of the invention, the invention provides a method for manufacturing an optical communication module. The steps include providing a light-transmitting substrate, a first metal circuit layer and a photoelectric conversion element, wherein the first metal circuit layer is formed on the light-transmitting substrate. Partial area of the surface, and the photoelectric conversion element is arranged above the light-transmitting substrate, and the lower surface of the photoelectric conversion element is coupled to the first metal circuit layer; the first negative photoresist is coated on the surrounding area of the photoelectric conversion element and the photoelectric conversion element. The upper surface of the conversion element, where the surrounding area of the photoelectric conversion element includes part of the first metal circuit layer; exposing the first negative photoresist from the bottom of the light-transmitting substrate upward; developing the first negative photoresist To form a first patterned photoresist layer, the first patterned photoresist layer is formed in the surrounding area of the photoelectric conversion element and exposes the upper surface of the photoelectric conversion element; and a second metal circuit layer is formed on the upper surface of the photoelectric conversion element. area, the upper surface of the first patterned photoresist layer and the side surfaces of the first patterned photoresist layer, the second metal circuit layer is coupled to the upper surface of the photoelectric conversion element; the second negative photoresist is fully coated to cover the The upper surface of a patterned photoresist layer, the exposed portion of the upper surface of the photoelectric conversion element and a partial area of the second metal circuit layer; facing upward from the bottom of the light-transmitting substrate to the first patterned photoresist layer and the second negative type Exposing the photoresist; developing the second negative photoresist to form a second patterned photoresist layer, and the second patterned photoresist layer forms an opening relative to the area above the photoelectric conversion element, and the opening exposes the photoelectric conversion element The exposed portion of the upper surface; in one embodiment of the present invention, after completing each step, a step of "removing the light-transmitting substrate" is further included; in one embodiment of the present invention, after completing "forming the second metal circuit layer" After the step of "coupling the second metal circuit layer to the upper surface of the photoelectric conversion element in a partial area of the upper surface of the photoelectric conversion element, the upper surface of the first patterned photoresist layer and the side surface of the first patterned photoresist layer," It further includes the step of "forming a spacer on another part of the upper surface of the photoelectric conversion element".

Based on the purpose of the invention, the invention provides a method for manufacturing an optical communication module. The steps include providing a light-transmitting substrate, a first metal circuit layer and a photoelectric conversion element, wherein the first metal circuit layer is formed on the light-transmitting substrate. Partial area of the surface, and the photoelectric conversion element is arranged above the light-transmitting substrate, and the lower surface of the photoelectric conversion element is coupled to the first metal circuit layer; the first negative photoresist is coated on the surrounding area of the photoelectric conversion element and the photoelectric conversion element. The upper surface of the conversion element, where the surrounding area of the photoelectric conversion element includes part of the first metal circuit layer; exposing the first negative photoresist from the bottom of the light-transmitting substrate upward; developing the first negative photoresist To form a first patterned photoresist layer, the first patterned photoresist layer is formed in the surrounding area of the photoelectric conversion element and exposes the upper surface of the photoelectric conversion element; the second negative photoresist is fully coated to cover the first pattern Pattern the upper surface of the photoresist layer and the exposed portion of the upper surface of the photoelectric conversion element; expose the first patterned photoresist layer and the second negative photoresist from the bottom of the light-transmitting substrate upward; expose the second negative photoresist to The resist is developed to form a second patterned photoresist layer, and the second patterned photoresist layer forms an opening relative to the area above the photoelectric conversion element, and the opening exposes the exposed portion of the upper surface of the photoelectric conversion element; in an implementation of the present invention In an example, after completing each step, a step of "removing the light-transmitting substrate" is further included; in one embodiment of the present invention, after completing "developing the first negative photoresist to form a first patterned photoresist layer" After the step of "forming a first patterned photoresist layer in the surrounding area of the photoelectric conversion element and exposing the upper surface of the photoelectric conversion element", it further includes the step of "forming a spacer on a partial area of the upper surface of the photoelectric conversion element".

Based on the purpose of the invention, the invention provides a method for preparing an optical communication module. The steps in sequence include providing a light-transmitting substrate and a photoelectric conversion element. The photoelectric conversion element is arranged on the upper surface of the light-transmitting substrate; coating a first negative light The resist is applied to the surrounding area of the photoelectric conversion element and the upper surface of the photoelectric conversion element; exposing the first negative photoresist upward from the bottom of the light-transmitting substrate; developing the first negative photoresist to form the first pattern Photoresist layer, a first patterned photoresist layer is formed in the surrounding area of the photoelectric conversion element and exposes the upper surface of the photoelectric conversion element; a second metal circuit layer is formed in a partial area of the upper surface of the photoelectric conversion element, and the first patterned The upper surface of the photoresist layer and the side of the first patterned photoresist layer, the second metal circuit layer is coupled to the upper surface of the photoelectric conversion element; the second negative photoresist is fully coated to cover the first patterned photoresist layer The upper surface of the photoelectric conversion element, the exposed portion of the upper surface of the photoelectric conversion element and part of the second metal circuit layer; expose the first patterned photoresist layer and the second negative photoresist from the bottom of the light-transmitting substrate upward; The two negative photoresists are developed to form a second patterned photoresist layer, and the second patterned photoresist layer forms an opening relative to the area above the photoelectric conversion element, and the opening exposes the exposed portion of the upper surface of the photoelectric conversion element; in this paper In one embodiment of the invention, after completing each step, a step of "removing the light-transmitting substrate" is further included; in one embodiment of the invention, after completing "the step of forming a second metal circuit layer on the upper surface of the photoelectric conversion element" After the step of "partial area, the upper surface of the first patterned photoresist layer and the side surface of the first patterned photoresist layer, the second metal circuit layer is coupled to the upper surface of the photoelectric conversion element", it further includes "forming a spacer on the photoelectric conversion element". Convert another area of the upper surface of the component.

Based on the purpose of the invention, the invention provides a method for preparing an optical communication module. The steps in sequence include providing a light-transmitting substrate and a photoelectric conversion element. The photoelectric conversion element is arranged above the light-transmitting substrate; coating a first negative photoresist Apply an agent to the surrounding area of the photoelectric conversion element and the upper surface of the photoelectric conversion element; expose the first negative photoresist from the bottom of the light-transmitting substrate upward; develop the first negative photoresist to form the first patterned light resist layer, the first patterned photoresist layer is formed in the surrounding area of the photoelectric conversion element and exposes the upper surface of the photoelectric conversion element; the second metal circuit layer is formed in a partial area of the upper surface of the photoelectric conversion element, and the first patterned photoresist layer is formed on the upper surface of the photoelectric conversion element. The upper surface of the resist layer and the side of the first patterned photoresist layer, the second metal circuit layer is coupled to the upper surface of the photoelectric conversion element; the second negative photoresist is fully coated to cover the first patterned photoresist layer The upper surface, the exposed portion of the upper surface of the photoelectric conversion element and part of the second metal circuit layer; expose the first patterned photoresist layer and the second negative photoresist from the bottom of the light-transmitting substrate upward; The second negative photoresist is developed to form a second patterned photoresist layer, and the second patterned photoresist layer forms an opening relative to the area above the photoelectric conversion element, and the opening exposes the exposed portion of the upper surface of the photoelectric conversion element; Remove the light-transmitting substrate; form a first metal circuit layer, and the first metal circuit layer is coupled to the lower surface of the photoelectric conversion element; in one embodiment of the present invention, after completing "forming a second metal circuit layer on the upper surface of the photoelectric conversion element After the step of "partial area of the surface, the upper surface of the first patterned photoresist layer and the side surface of the first patterned photoresist layer, the second metal circuit layer is coupled to the upper surface of the photoelectric conversion element", it further includes "forming a spacer" on another part of the upper surface of the photoelectric conversion element."

Based on the purpose of the invention, the invention provides a method for preparing an optical communication module. The steps in sequence include providing a light-transmitting substrate and a photoelectric conversion element. The photoelectric conversion element is arranged above the light-transmitting substrate; coating a first negative photoresist Apply an agent to the surrounding area of the photoelectric conversion element and the upper surface of the photoelectric conversion element; expose the first negative photoresist from the bottom of the light-transmitting substrate upward; develop the first negative photoresist to form the first patterned light resist layer, the first patterned photoresist layer is formed in the surrounding area of the photoelectric conversion element and exposes the upper surface of the photoelectric conversion element; the second negative photoresist is fully coated to cover the upper surface of the first patterned photoresist layer and the exposed portion of the upper surface of the photoelectric conversion element; exposing the first patterned photoresist layer and the second negative photoresist from the bottom of the light-transmitting substrate upward; developing the second negative photoresist to form a second Patterned photoresist layer, and the second patterned photoresist layer forms an opening relative to the area above the photoelectric conversion element, and the opening exposes the exposed portion of the upper surface of the photoelectric conversion element; in one embodiment of the present invention, after completing " After the step of developing the first negative photoresist to form a first patterned photoresist layer, the first patterned photoresist layer is formed in the surrounding area of the photoelectric conversion element and exposes the upper surface of the photoelectric conversion element, further including " The step of forming a spacer on a partial area of the upper surface of the photoelectric conversion element.

In one embodiment of the present invention, the light-transmitting substrate is a transparent sheet or a light filter.

In one embodiment of the present invention, the photoelectric conversion element is a laser element or a light receiving element.

In an embodiment of the present invention, the method of forming the first metal circuit layer is chemical vapor deposition or physical vapor deposition.

In an embodiment of the present invention, the method of forming the second metal circuit layer is chemical vapor deposition or physical vapor deposition.

In one embodiment of the present invention, the shape of the photoelectric conversion element is a cube or a cuboid, and the aperture of the photoelectric conversion element is located at the center of the upper surface of the photoelectric conversion element.

In an embodiment of the present invention, the material of the first metal circuit layer is gold, silver, copper, iron, aluminum, molybdenum, titanium, tungsten, nickel, cobalt, ruthenium or indium tin oxide.

In an embodiment of the present invention, the width of the metal circuit of the first metal circuit layer is 100 μm, and the thickness is 2~5 μm.

In an embodiment of the present invention, the material of the second metal circuit layer is gold, silver, copper, iron, aluminum, molybdenum, titanium, tungsten, nickel, cobalt, ruthenium or indium tin oxide.

In an embodiment of the present invention, the width of the metal circuit of the second metal circuit layer is 100 μm, and the thickness is 2~5 μm.

In one embodiment of the invention, both the first negative photoresist and the second negative photoresist are benzocyclobutene (BCB).

In order to make it easy for those with ordinary knowledge in the technical field to understand the content of the present invention, the present invention will be further described below in conjunction with the embodiments and drawings. Each embodiment is only used to illustrate the technical features of the present invention. The mentioned content It does not limit the invention.

Reference throughout this specification to "one embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment. Therefore, references to "one embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Additionally, specific features, structures, or characteristics may be combined in any manner in one or more embodiments.

In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", etc. are based on the orientation or positional relationship shown in the drawings, and are only for convenience. The description is pragmatic and simplified, and is not intended to indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be construed as a limitation of the invention.

The terms "first" and "second" in the description of the present invention are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

Please refer to Figure 1. Figure 1 is a cross-sectional view of a first aspect of an optical communication module. The optical communication module includes a light-transmitting substrate 10, a first metal circuit layer 20, a photoelectric conversion element 30, a spacer 50, a first Patterned photoresist layer 70, second metal circuit layer 22 and second patterned photoresist layer 72; wherein the first metal circuit layer 20 is disposed on a partial area of the upper surface of the light-transmitting substrate 10, and above the light-transmitting substrate 10 A photoelectric conversion element 30 is provided, and the lower surface of the photoelectric conversion element 30 is coupled to the first metal circuit layer 20; wherein the first patterned photoresist layer 70 is formed in the surrounding area of the photoelectric conversion element 30, and the surrounding area of the photoelectric conversion element 30 The area includes a partial area of the first metal circuit layer 20; the second metal circuit layer 22 is distributed on a partial area of the upper surface of the photoelectric conversion element 30, the upper surface of the first patterned photoresist layer 70 and the first patterned photoresist. The side of the layer 70, and the second metal circuit layer 22 is coupled to the upper surface of the photoelectric conversion element 30; wherein the spacer 50 is disposed on another part of the upper surface of the photoelectric conversion element 30; wherein the second patterned photoresist layer 72 is formed An opening 80 is formed on the upper surface of the first patterned photoresist layer 70 and covers part of the second metal circuit layer 22 , and the second patterned photoresist layer 72 is formed with respect to the area above the photoelectric conversion element 30 . 80 expose the exposed portion of the upper surface of the photoelectric conversion element 30 and the spacer 50, where the exposed portion of the upper surface of the photoelectric conversion element 30 refers to the area of the upper surface of the photoelectric conversion element 30 that is not covered by the second metal circuit layer 22 and the spacer 50; The area where the first metal circuit layer 20 is far away from the photoelectric conversion element 30 and not covered by the first patterned photoresist layer 70 , and the second metal circuit layer 22 is far away from the photoelectric conversion element 30 and is not covered by the first patterned photoresist layer 70 The covered area is used for coupling with the printed circuit board (not shown in the figure), so as to transmit the electrical signals transmitted by the printed circuit board (not shown in the figure) to the photoelectric conversion element 30, and then through the photoelectric conversion element 30, the telecommunication signal is transmitted The signal is converted into an optical signal, and the optical signal is output through the aperture of the photoelectric conversion element 30; wherein the first patterned photoresist layer 70 is a patterned photoresist layer formed by exposing and developing the first negative photoresist 40; wherein The second patterned photoresist layer 72 is a patterned photoresist layer formed by exposing and developing the second negative photoresist 42; the first patterned photoresist layer 70 and the second patterned photoresist layer 72 both serve as The dielectric is used to encapsulate the photoelectric conversion element 30; the photoelectric conversion element 30 is used to perform electro-optical conversion and convert the received electrical signal into an optical signal; the spacer 50 is used to separate the photoelectric conversion element 30 and insert into the opening 80 The optical fiber (not shown in the figure), and the spacer 50 does not block the aperture of the photoelectric conversion element 30, so that the optical signal of the photoelectric conversion element 30 can be transmitted to the optical fiber (not shown in the figure) inserted into the opening 80; wherein the exposure light source The exposure light 62 generated by 60 will pass through the light-transmitting substrate 10 and then illuminate the first negative photoresist 40 and the second negative photoresist 42, causing the first negative photoresist 40 and the second negative photoresist to The resist 42 undergoes a cross-linking reaction and is cured.

Please refer to Figures 1 to 10. The present invention provides a first aspect of preparation method of an optical communication module. The steps in sequence include step S101, step S102, step S103, step S104, step S105, step S106, step S107, step S108 and step S109 are described in sections below with figures.

Referring to Figures 2 and 3, step S101: Provide a light-transmissive substrate 10, a first metal circuit layer 20 and a photoelectric conversion element 30, wherein the first metal circuit layer 20 is formed on a partial area of the upper surface of the light-transmissive substrate 10, and The photoelectric conversion element 30 is disposed above the light-transmitting substrate 10, and the lower surface of the photoelectric conversion element 30 is coupled to the first metal circuit layer 20; the method of forming the first metal circuit layer 20 can be chemical vapor deposition or physical vapor deposition. Deposition; wherein the photoelectric conversion element 30 is disposed above the light-transmitting substrate 10 using conductive adhesive die-hardening, ball flip-chip or surface mounting technology, so that the lower surface of the photoelectric conversion element 30 is coupled to the first metal circuit layer 20 .

Please refer to FIG. 2 and FIG. 4 , step S102: Coat the first negative photoresist 40 on the surrounding area of the photoelectric conversion element 30 and the upper surface of the photoelectric conversion element 30, wherein the surrounding area of the photoelectric conversion element 30 includes the first metal Partial areas of the circuit layer 20, that is, partial areas of the photoelectric conversion element 30 and the first metal circuit layer 20 are covered by the first negative photoresist 40; the first metal circuit layer 20 is not covered by the first negative photoresist. The area covered by 40 is used for coupling with the printed circuit board (not shown in the figure) to receive electrical signals from the printed circuit board (not shown in the figure).

Please refer to FIG. 2 and FIG. 5 , step S103: Expose the first negative photoresist 40 from the bottom of the light-transmitting substrate 10 upward; the exposure is to use the exposure light source 60 to generate the exposure light 62, and the exposure light 62 passes through The light-transmitting substrate 10 is then irradiated to the first negative photoresist 40, causing the first negative photoresist 40 to undergo a cross-linking reaction. The photoelectric conversion element 30 located above the light-transmitting substrate 10 will block the exposure light 62. Therefore, The first negative photoresist 40 located in the area above the photoelectric conversion element 30 cannot be exposed. Therefore, when the developer is used for subsequent development, compared with the exposed first negative type photoresist located in the surrounding area of the photoelectric conversion element 30 The photoresist 40 and the first negative photoresist 40 located in the area above the photoelectric conversion element 30 cannot be exposed to light and are therefore more likely to dissolve in the developer.

Please refer to FIG. 2 and FIG. 6 , step S104: develop the first negative photoresist 40 to form a first patterned photoresist layer 70. The first patterned photoresist layer 70 is formed in the surrounding area of the photoelectric conversion element 30. And expose the upper surface of the photoelectric conversion element 30; wherein development is to use a developer to dissolve the first negative photoresist 40. Since the first negative photoresist 40 located in the upper area of the photoelectric conversion element 30 is not exposed, it will It is dissolved by the developer to expose the upper surface of the photoelectric conversion element 30, and further to facilitate the subsequent layout of metal circuits, when the first negative photoresist 40 located in the upper area of the photoelectric conversion element 30 is dissolved in the developer , the developer will continue to be used to dissolve the first negative photoresist 40 located in the surrounding area of the photoelectric conversion element 30, so that the height of the upper surface of the first negative photoresist 40 located in the surrounding area of the photoelectric conversion element 30 is consistent with the photoelectric conversion element 30. The height of the upper surface of the conversion element 30 is the same, and the developer is removed to form the first patterned photoresist layer 70. Therefore, the first patterned photoresist layer 70 is located in the peripheral area of the photoelectric conversion element 30, and the first patterned The upper surface of the photoresist layer 70 is at the same height as the upper surface of the photoelectric conversion element 30 and exposes the upper surface of the photoelectric conversion element 30; this is only a preferred embodiment, and the actual implementation is not limited to this, and can also be implemented according to practical needs. The height of the upper surface of the first patterned photoresist layer 70 located in the peripheral area of the photoelectric conversion element 30 is higher than the height of the upper surface of the photoelectric conversion element 30 or lower than the height of the upper surface of the photoelectric conversion element 30 .

Please refer to FIG. 2 and FIG. 7 , step S105 : forming the second metal circuit layer 22 on a partial area of the upper surface of the photoelectric conversion element 30 , the upper surface of the first patterned photoresist layer 70 and the first patterned photoresist layer 70 On the side, the second metal circuit layer 22 is coupled to the upper surface of the photoelectric conversion element 30; the method of forming the second metal circuit layer 22 may be chemical vapor deposition or physical vapor deposition.

Please refer to FIG. 2 and FIG. 8 , step S106: forming a spacer 50 on another part of the upper surface of the photoelectric conversion element 30; the spacer 50 can be formed on the upper surface of the photoelectric conversion element 30 using a positive photoresist through exposure. , or various resins such as epoxy resin or acrylic resin can be formed on the upper surface of the photoelectric conversion element 30 by a needle injection method or a glue needle dispensing method; the size of the spacer 50 can be the same as the size of the photoelectric conversion element 30, or It may be different from the size of the photoelectric conversion element 30. In the embodiment of the present invention, the size of the spacer 50 is smaller than the size of the photoelectric conversion element 30 as an example.

Please refer to FIG. 2 and FIG. 9 , step S107 : fully coat the second negative photoresist 42 to cover the upper surface of the first patterned photoresist layer 70 , the exposed portion of the upper surface of the photoelectric conversion element 30 , the spacer 50 and Partial area of the second metal circuit layer 22; the area of the second metal circuit layer 22 not covered by the second negative photoresist 42 is used to couple with the printed circuit board (not shown in the figure) to receive signals from the printed circuit. board (not shown in the figure).

Please refer to FIG. 2 and FIG. 10 , step S108 : exposing the first patterned photoresist layer 70 and the second negative photoresist 42 from the bottom of the light-transmitting substrate 10 upward.

Please refer back to FIGS. 1 and 2 , step S109 : develop the second negative photoresist 42 to form a second patterned photoresist layer 72 , and the second patterned photoresist layer 72 is positioned above the photoelectric conversion element 30 An opening 80 is formed in the area, and the opening 80 exposes the exposed portion of the upper surface of the photoelectric conversion element 30 and the spacer 50; wherein development is to use a developer to dissolve the second negative photoresist 42, because the third negative photoresist 42 located in the upper area of the photoelectric conversion element 30 The second negative photoresist 42 is not exposed, so the second negative photoresist 42 will form an opening 80 relative to the area above the photoelectric conversion element 30, and the opening 80 will expose the exposed portion of the upper surface of the photoelectric conversion element 30 and The spacer 50 enables the optical fiber (not shown in the figure) to achieve direct coupling through the insertion opening 80; in the first aspect of the preparation method of the optical communication module, the exposed portion of the upper surface of the photoelectric conversion element 30 refers to the photoelectric conversion element 30. The upper surface of the conversion element 30 is an area not covered by the second metal circuit layer 22 and the spacer 50 .

Please refer to FIGS. 1 and 2 . In one embodiment of the present invention, a method for manufacturing a first aspect of an optical communication module that does not include the spacer 50 is further provided. The preparation method is the same as that of the third aspect of the optical communication module. The preparation method of one aspect is basically the same. The difference is that the description about the spacer 50 is not included, that is, step S106 is not required, and the description about the spacer 50 is removed in steps S107 and S109, and because no spacer 50 is formed in the photovoltaic The upper surface of the conversion element 30, therefore the exposed portion of the upper surface of the photoelectric conversion element 30 refers to the area of the upper surface of the photoelectric conversion element 30 that is not covered by the second metal circuit layer 22, so step S107 becomes "Fully coating the second negative type The photoresist 42 covers the upper surface of the first patterned photoresist layer 70 , the exposed portion of the upper surface of the photoelectric conversion element 30 and a partial area of the second metal circuit layer 22 ; wherein the second metal circuit layer 22 is not exposed to the second negative The area covered by the photoresist 42 is used to couple with the printed circuit board (not shown in the figure) to receive electrical signals from the printed circuit board (not shown in the figure)." And step S109 becomes "For the second negative The photoresist 42 is developed to form a second patterned photoresist layer 72 , and the second patterned photoresist layer 72 forms an opening 80 relative to the area above the photoelectric conversion element 30 , and the opening 80 exposes the upper surface of the photoelectric conversion element 30 Exposed portion; wherein development is to use a developer to dissolve the second negative photoresist 42. Since the second negative photoresist 42 located in the upper area of the photoelectric conversion element 30 is not exposed, the second negative photoresist 42 An opening 80 will be formed relative to the area above the photoelectric conversion element 30, and the opening 80 will expose the exposed portion of the upper surface of the photoelectric conversion element 30, so that the optical fiber (not shown in the figure) can achieve direct coupling through the insertion opening 80."

Please refer to Figure 11. Figure 11 is a cross-sectional view of a second aspect of the optical communication module. The difference between the second aspect of the optical communication module and the first aspect is that the second aspect does not include the second metal circuit layer. twenty two.

Please refer to Figure 12. Figure 12 is a cross-sectional view of a third aspect of the optical communication module. The difference between the third aspect of the optical communication module and the first aspect is that the third aspect does not include the first metal circuit layer. 20.

Please refer to Figure 11 and Figure 13. The present invention provides a second aspect of preparation method of an optical communication module. The steps in sequence include step S201, step S202, step S203, step S204, step S205, step S206, step S207 and step S208, the steps are basically the same as the preparation method of the optical communication module of the first aspect, except that the step of forming the second metal circuit layer 22 is not included; Step S201 is to provide the light-transmitting substrate 10, the first metal circuit layer 20 and the optoelectronic circuit layer 20. Conversion element 30, in which the first metal circuit layer 20 is formed on a partial area of the upper surface of the light-transmitting substrate 10, and the photoelectric conversion element 30 is arranged above the light-transmitting substrate 10, and the lower surface of the photoelectric conversion element 30 is coupled to the first Metal circuit layer 20; the method of forming the first metal circuit layer 20 can be chemical vapor deposition or physical vapor deposition; wherein the photoelectric conversion element 30 is configured using conductive glue solid crystal, ball mounting flip chip or surface mount technology. Above the light-transmitting substrate 10, the lower surface of the photoelectric conversion element 30 is coupled to the first metal circuit layer 20; step S202 is to coat the first negative photoresist 40 on the surrounding area of the photoelectric conversion element 30 and the photoelectric conversion element 30. The upper surface of the conversion element 30, where the surrounding area of the photoelectric conversion element 30 includes part of the first metal circuit layer 20; wherein step S203 is to expose the first negative photoresist 40 from the bottom of the light-transmitting substrate 10 upward; Step S204 is to develop the first negative photoresist 40 to form a first patterned photoresist layer 70. The first patterned photoresist layer 70 is formed in the surrounding area of the photoelectric conversion element 30 and exposes the photoelectric conversion element 30. The upper surface; Step S205 is to form the spacer 50 on a partial area of the upper surface of the photoelectric conversion element 30 ; and Step S206 is to fully coat the second negative photoresist 42 to cover the upper surface of the first patterned photoresist layer 70 surface, the exposed portion of the upper surface of the photoelectric conversion element 30 and the spacer 50; wherein step S207 is to expose the first patterned photoresist layer 70 and the second negative photoresist 42 from the bottom of the light-transmitting substrate 10 upward; wherein Step S208 is to develop the second negative photoresist 42 to form a second patterned photoresist layer 72, and the second patterned photoresist layer 72 forms an opening 80 relative to the area above the photoelectric conversion element 30, and the opening 80 is exposed The exposed portion of the upper surface of the photoelectric conversion element 30 and the spacer 50; since the preparation method of the second aspect of the optical communication module does not include the step of forming the second metal circuit layer 22, the upper surface of the photoelectric conversion element 30 is exposed. The portion refers to an area of the upper surface of the photoelectric conversion element 30 that is not covered by the spacer 50 .

Please refer to FIG. 11 and FIG. 13 . In one embodiment of the present invention, a method for manufacturing a second aspect of an optical communication module that does not include the spacer 50 is further provided. The manufacturing method is the same as that of the second aspect of the optical communication module. The preparation methods of the two forms are basically the same. The difference is that the description about the spacer 50 is not included, that is, step S205 is not required, and the description about the spacer 50 is removed in steps S206 and S208, and since no spacer 50 is formed in the photovoltaic The upper surface of the conversion element 30, therefore the exposed portion of the upper surface of the photoelectric conversion element 30 is the upper surface of the photoelectric conversion element 30, so step S206 becomes "Fully coat the second negative photoresist 42 to cover the first patterning The upper surface of the photoresist layer 70 and the exposed portion of the upper surface of the photoelectric conversion element 30" and step S208 becomes "Develop the second negative photoresist 42 to form the second patterned photoresist layer 72, and the second patterning The photoresist layer 72 forms an opening 80 relative to the area above the photoelectric conversion element 30, and the opening 80 exposes the exposed portion of the upper surface of the photoelectric conversion element 30.

Please refer to Figure 12 and Figure 14. The present invention provides a third aspect of a method for manufacturing an optical communication module. The steps in sequence include step S301, step S302, step S303, step S304, step S305, step S306, step S307, step S308 and step S309 are basically the same as the preparation method of the optical communication module of the first aspect, except that the step of forming the first metal circuit layer 20 is not included; step S301 is to provide the light-transmitting substrate 10 and the photoelectric conversion element 30 , the photoelectric conversion element 30 is arranged on the upper surface of the light-transmitting substrate 10; wherein step S302 is to coat the first negative photoresist 40 on the surrounding area of the photoelectric conversion element 30 and the upper surface of the photoelectric conversion element 30; wherein step S303 is The first negative photoresist 40 is exposed upward from the bottom of the light-transmitting substrate 10; step S304 is to develop the first negative photoresist 40 to form the first patterned photoresist layer 70. The first patterned light The resistive layer 70 is formed in the surrounding area of the photoelectric conversion element 30 and exposes the upper surface of the photoelectric conversion element 30; Step S305 is to form the second metal circuit layer 22 on a partial area of the upper surface of the photoelectric conversion element 30, first patterning The upper surface of the photoresist layer 70 and the side surface of the first patterned photoresist layer 70 and the second metal circuit layer 22 are coupled to the upper surface of the photoelectric conversion element 30; Step S306 is to form a spacer 50 on the upper surface of the photoelectric conversion element 30. Another part of the surface; step S307 is to fully coat the second negative photoresist 42 to cover the upper surface of the first patterned photoresist layer 70, the exposed portion of the upper surface of the photoelectric conversion element 30, the spacer 50 and the third Partial areas of the two metal circuit layers 22; Step S308 is to expose the first patterned photoresist layer 70 and the second negative photoresist 42 from the bottom of the light-transmissive substrate 10 upward; and Step S309 is to expose the second negative photoresist layer 70 upward. The photoresist 42 is developed to form a second patterned photoresist layer 72 , and the second patterned photoresist layer 72 forms an opening 80 relative to the area above the photoelectric conversion element 30 , and the opening 80 exposes the upper surface of the photoelectric conversion element 30 Exposed portion and spacer 50; in the third aspect of the preparation method of the optical communication module, the exposed portion of the upper surface of the photoelectric conversion element 30 means that the upper surface of the photoelectric conversion element 30 is not separated by the second metal circuit layer 22 and Area covered by piece 50.

Please refer to FIGS. 12 and 14 . In one embodiment of the present invention, a method for manufacturing a third aspect of an optical communication module that does not include the spacer 50 is further provided. The manufacturing method is the same as the third aspect of the optical communication module. The preparation methods of the three states are basically the same. The difference is that the description about the spacer 50 is not included, that is, step S306 is not required, and the description about the spacer 50 is removed in steps S307 and S309, and since no spacer 50 is formed in the photovoltaic The upper surface of the conversion element 30, therefore the exposed portion of the upper surface of the photoelectric conversion element 30 refers to the area of the upper surface of the photoelectric conversion element 30 that is not covered by the second metal circuit layer 22, so step S307 becomes "Fully coating the second negative type The photoresist 42 covers the upper surface of the first patterned photoresist layer 70, the exposed portion of the upper surface of the photoelectric conversion element 30, and a partial area of the second metal circuit layer 22" and step S309 becomes "for the second negative light The resist 42 is developed to form a second patterned photoresist layer 72 , and the second patterned photoresist layer 72 forms an opening 80 relative to the area above the photoelectric conversion element 30 , and the opening 80 exposes the exposed portion of the upper surface of the photoelectric conversion element 30 ”.

Please refer to Figure 1, Figure 2, Figure 11, Figure 12, Figure 13 and Figure 14. In an embodiment of the present invention, the first aspect, the second aspect and the third aspect of the optical communication module can also be It is an aspect that does not include the light-transmitting substrate 10, so the method of manufacturing the optical communication module of the first aspect is after completing step S109, the method of manufacturing the optical communication module of the second aspect is after completing step S208, and After completing step S309, the manufacturing method of the optical communication module of the third aspect may further include the step of removing the light-transmitting substrate 10.

Please refer to Figure 15. In another embodiment of the present invention, in the first aspect of the preparation method of the optical communication module, the first metal circuit layer 20 can be formed after the light-transmitting substrate 10 is removed, and Since the first metal circuit layer 20 is formed after the light-transmitting substrate 10, the first metal circuit layer 20 will be formed on the lower surface of the photoelectric conversion element 30 and the lower surface of the first patterned photoresist layer 70, and the first The metal circuit layer is coupled to the lower surface of the photoelectric conversion element 30, which is hereinafter referred to as the fourth aspect of the optical communication module.

Please refer to Figures 15 and 16. The preparation method of the fourth aspect of the optical communication module is basically the same as the preparation method of the first aspect of the optical communication module. The difference is that it further includes the step of removing the light-transmitting substrate 10, and The first metal circuit layer 20 is formed after removing the light-transmitting substrate 10 . Since the first metal circuit layer 20 does not exist when the photoelectric conversion element 30 is configured, the photoelectric conversion element 30 is replaced with a light-transmitting adhesive material. 30 is disposed above the light-transmitting substrate 10, in which the light-transmitting adhesive material can be solid optical glue or liquid optical glue. The steps include step S401, step S402, step S403, step S404, step S405, step S406, step S407 and Step S408, step S409, step S410 and step S411, wherein step S401 is to provide a light-transmitting substrate 10 and a photoelectric conversion element 30, and the photoelectric conversion element 30 is disposed above the light-transmitting substrate 10; and step S402 is to coat a first negative type The photoresist 40 is in the surrounding area of the photoelectric conversion element 30 and the upper surface of the photoelectric conversion element 30 , that is, the photoelectric conversion element 30 is covered by the first negative photoresist 40 ; Step S403 is from the bottom of the light-transmitting substrate 10 toward The first negative photoresist 40 is exposed; step S404 is developing the first negative photoresist 40 to form a first patterned photoresist layer 70. The first patterned photoresist layer 70 is formed on the photoelectric conversion element. 30 and expose the upper surface of the photoelectric conversion element 30; step S405 is to form the second metal circuit layer 22 on a partial area of the upper surface of the photoelectric conversion element 30, the upper surface of the first patterned photoresist layer 70 and On the side of the first patterned photoresist layer 70, the second metal circuit layer 22 is coupled to the upper surface of the photoelectric conversion element 30; Step S406 is to form the spacer 50 on another part of the upper surface of the photoelectric conversion element 30; wherein the steps S407 is to fully coat the second negative photoresist 42 to cover the upper surface of the first patterned photoresist layer 70 , the exposed portion of the upper surface of the photoelectric conversion element 30 , the spacer 50 and a partial area of the second metal circuit layer 22 ; Step S408 is to expose the first patterned photoresist layer 70 and the second negative photoresist 42 from the bottom of the light-transmitting substrate 10 upward; Step S409 is to develop the second negative photoresist 42 to form The second patterned photoresist layer 72 forms an opening 80 relative to the area above the photoelectric conversion element 30, and the opening 80 exposes the exposed portion of the upper surface of the photoelectric conversion element 30 and the spacer 50; wherein The exposed portion of the upper surface of the photoelectric conversion element 30 refers to the area of the upper surface of the photoelectric conversion element 30 that is not covered by the second metal circuit layer 22 and the spacer 50; step S410 is to remove the light-transmitting substrate 10; step S411 is to form a third A metal circuit layer 20 , wherein the first metal circuit layer 20 is coupled to the lower surface of the photoelectric conversion element 30 .

Please refer to FIG. 15 and FIG. 16 . The present invention further provides a preparation method of the fourth aspect of the optical communication module that does not include the spacer 50 . The preparation method is basically the same as the preparation method of the fourth aspect of the optical communication module. Consistent, the difference is that the description about the spacer 50 is not included, that is, step S406 is not required, and the description about the spacer 50 is removed in steps S407 and S409, and since no spacer 50 is formed on the upper surface of the photoelectric conversion element 30, Therefore, the exposed portion of the upper surface of the photoelectric conversion element 30 refers to the area of the upper surface of the photoelectric conversion element 30 that is not covered by the second metal circuit layer 22 , so step S407 becomes “Fully coat the second negative photoresist 42 to cover the second metal circuit layer 22 . A patterned upper surface of the photoresist layer 70, the exposed portion of the upper surface of the photoelectric conversion element 30 and a partial area of the second metal circuit layer 22" and step S409 becomes "Develop the second negative photoresist 42 to form a third Two patterned photoresist layers 72 are formed, and the second patterned photoresist layer 72 forms an opening 80 relative to the area above the photoelectric conversion element 30, and the opening 80 exposes the exposed portion of the upper surface of the photoelectric conversion element 30."

Please refer to Figures 17 and 18. In another embodiment of the present invention, in the second aspect of the manufacturing method of the optical communication module, the first metal circuit layer can be formed after the light-transmitting substrate 10 is removed. 20. Since the first metal circuit layer 20 is formed after the light-transmitting substrate 10, the first metal circuit layer 20 will be formed on the lower surface of the photoelectric conversion element 30 and the lower surface of the first patterned photoresist layer 70. And the first metal circuit layer is coupled to the lower surface of the photoelectric conversion element 30, which is hereinafter referred to as the fifth aspect of the optical communication module.

Please refer to Figures 17 and 18. The preparation method of the fifth aspect of the optical communication module is basically the same as the preparation method of the second aspect of the optical communication module. The difference is that it further includes the step of removing the light-transmitting substrate 10, and The first metal circuit layer 20 is formed after removing the light-transmitting substrate 10 . Since the first metal circuit layer 20 does not exist when the photoelectric conversion element 30 is configured, the photoelectric conversion element 30 is replaced with a light-transmitting adhesive material. 30 is disposed above the light-transmitting substrate 10, in which the light-transmitting adhesive material can be solid optical glue or liquid optical glue. The steps include step S501, step S502, step S503, step S504, step S505, step S506, step S507, Step S508, step S509 and step S510. Step S501 is to provide a light-transmitting substrate 10 and a photoelectric conversion element 30. The photoelectric conversion element 30 is disposed above the light-transmitting substrate 10; step S502 is to coat the first negative photoresist 40. In the surrounding area of the photoelectric conversion element 30 and the upper surface of the photoelectric conversion element 30; step S503 is to expose the first negative photoresist 40 from the bottom of the light-transmitting substrate 10 upward; and step S504 is to expose the first negative photoresist 40 upward. The photoresist 40 is developed to form a first patterned photoresist layer 70. The first patterned photoresist layer 70 is formed in the surrounding area of the photoelectric conversion element 30 and exposes the upper surface of the photoelectric conversion element 30; step S505 is to form a spacer. Part 50 is placed on a partial area of the upper surface of the photoelectric conversion element 30; step S506 is to fully coat the second negative photoresist 42 to cover the upper surface of the first patterned photoresist layer 70 and the upper surface of the photoelectric conversion element 30. The exposed portion and the spacer 50; Step S507 is to expose the first patterned photoresist layer 70 and the second negative photoresist 42 from the bottom of the light-transmissive substrate 10 upward; and Step S508 is to expose the second negative photoresist layer 70 to the second negative photoresist 42 from below. The resist 42 is developed to form a second patterned photoresist layer 72 , and the second patterned photoresist layer 72 forms an opening 80 relative to the area above the photoelectric conversion element 30 , and the opening 80 exposes the exposed portion of the upper surface of the photoelectric conversion element 30 and the spacer 50; since the step of forming the second metal circuit layer 22 is not included, the exposed portion of the upper surface of the photoelectric conversion element 30 refers to the area of the upper surface of the photoelectric conversion element 30 that is not covered by the spacer 50; wherein step S509 is The light-transmitting substrate 10 is removed; step S510 is to form a first metal circuit layer 20 , where the first metal circuit layer 20 is coupled to the lower surface of the photoelectric conversion element 30 .

The present invention further provides a preparation method of the fifth aspect of the optical communication module that does not include the spacer 50. The preparation method is basically the same as the preparation method of the fifth aspect of the optical communication module. The difference is that the spacer 50 is not included. description of the spacer 50 , that is, step S505 is not required, and the description of the spacer 50 is removed in steps S506 and S508 , and since no spacer 50 is formed on the upper surface of the photoelectric conversion element 30 , the upper surface of the photoelectric conversion element 30 The exposed part is the upper surface of the photoelectric conversion element 30, so step S506 becomes "Fully coat the second negative photoresist 42 to cover the upper surface of the first patterned photoresist layer 70 and the upper surface of the photoelectric conversion element 30 Exposed portion" and step S508 becomes "wherein step S508 is to develop the second negative photoresist 42 to form a second patterned photoresist layer 72, and the second patterned photoresist layer 72 is above the photoelectric conversion element 30 An opening 80 is formed in the area, and the opening 80 exposes the exposed portion of the upper surface of the photoelectric conversion element 30; Step S509 is to remove the light-transmitting substrate 10; Step S510 is to form the first metal circuit layer 20, wherein the first metal circuit layer 20 is coupled Connected to the lower surface of the photoelectric conversion element 30."

In one embodiment of this case, the second patterned photoresist layer 72 can be processed to adjust the configuration of the opening 80 of the optical communication module according to practical needs.

In the preferred embodiment of the present invention, in the preparation method of the first aspect of the optical communication module, the preparation method of the second aspect of the optical communication module and the preparation method of the third aspect of the optical communication module, The photoelectric conversion element 30 has a symmetrical shape such as a cube or a cuboid, and the aperture of the photoelectric conversion element 30 is located at the center of the upper surface of the photoelectric conversion element 30. When an optical fiber (not shown in the figure) is inserted into the opening 80, it will directly Align the aperture of the photoelectric conversion element 30, but the actual implementation is not limited to this. The shape of the photoelectric conversion element 30 can also be other shapes, and the position of the aperture of the photoelectric conversion element 30 can also be adjusted according to practical needs.

In an embodiment of the present invention, in the preparation method of the optical communication module of the first aspect, the preparation method of the optical communication module of the second aspect and the preparation method of the optical communication module of the third aspect, wherein According to the types of the first negative photoresist 40 and the second negative photoresist 42 used, the light-transmitting substrate 10 can be a transparent sheet or a filter, wherein a transparent sheet refers to one that can transmit light of all wavelengths. The light-transmitting sheet is, for example, a transparent glass sheet or a transparent plastic sheet. The filter may be an ultraviolet band-pass film, a visible light band-pass film, or an infrared band-pass film, but is not limited to this. It can also be used according to the exposure requirements The light wavelength is adjusted to filter the light wavelength range.

In one embodiment of the present invention, the first negative photoresist 40 and the second negative photoresist 42 are both benzocyclobutene (BCB), and the light-transmitting substrate 10 is a UV bandpass film , the exposure light source 60 is a mercury lamp.

In an embodiment of the present invention, the material of the first metal circuit layer 20 and the material of the second metal circuit layer 22 can be gold, silver, copper, iron, aluminum, molybdenum, titanium, tungsten, nickel, cobalt, ruthenium or Indium tin oxide.

In one embodiment of the present invention, the photoelectric conversion element 30 can be a laser element or a light receiving element. Examples of the laser element can be a vertical-cavity surface-emitting laser (VCSEL), a laser A diode (laser diode, LD) or a photodiode (PD), etc., wherein the light receiving element may be a photodiode, etc.

In one embodiment of the present invention, the width of the metal circuit of the first metal circuit layer 20 is 100 μm, and the thickness is 2~5 μm. However, the actual implementation is not limited to this, and the width and thickness can also be adjusted according to practical needs. .

In one embodiment of the present invention, the width of the metal circuit of the second metal circuit layer 22 is 100 μm and the thickness is 2~5 μm. However, the actual implementation is not limited to this, and the width and thickness can also be adjusted according to practical needs. .

The technical feature of the present invention is to shield light by the photoelectric conversion element itself, replacing the role of a high-precision mask in the current method of preparing an emission module by photoetching, thus saving time and money in designing a high-precision mask. production costs.

10: Translucent substrate 20: First metal circuit layer 22: Second metal circuit layer 30: Photoelectric conversion element 40:The first negative photoresist 42: Second negative photoresist 50: Spacer 60: Exposure light source 62: Exposure light 70: First patterned photoresist layer 72: Second patterned photoresist layer 80:Open your mouth S101~S109: Steps S201~S208: steps S301~S309: steps S401~S411: steps S501~S510: steps

Figure 1 is a schematic cross-sectional view of a first aspect of an optical communication module.

FIG. 2 is a step diagram of a method for manufacturing an optical communication module according to a first aspect.

FIG. 3 is a schematic cross-sectional view of step S101 in the method of manufacturing an optical communication module of the first aspect.

FIG. 4 is a schematic cross-sectional view of step S102 in the method of manufacturing an optical communication module according to the first aspect.

FIG. 5 is a schematic cross-sectional view of step S103 in the method of manufacturing an optical communication module according to the first aspect.

FIG. 6 is a schematic cross-sectional view of step S104 in the method of manufacturing an optical communication module according to the first aspect.

FIG. 7 is a schematic cross-sectional view of step S105 in the method of manufacturing an optical communication module according to the first aspect.

FIG. 8 is a schematic cross-sectional view of step S106 in the method of manufacturing an optical communication module according to the first aspect.

FIG. 9 is a schematic cross-sectional view of step S107 in the method of manufacturing an optical communication module according to the first aspect.

FIG. 10 is a schematic cross-sectional view of step S108 in the method of manufacturing an optical communication module according to the first aspect.

Figure 11 is a schematic cross-sectional view of a second aspect of the optical communication module.

Figure 12 is a schematic cross-sectional view of a third aspect of the optical communication module.

Figure 13 is a step diagram of a method for manufacturing an optical communication module in a second aspect.

FIG. 14 is a step diagram of a method for manufacturing an optical communication module in a third aspect.

Figure 15 is a schematic cross-sectional view of an optical communication module in a fourth aspect.

FIG. 16 is a step diagram of a method for manufacturing an optical communication module in a fourth aspect.

Figure 17 is a schematic cross-sectional view of the fifth aspect of the optical communication module.

FIG. 18 is a step diagram of a method of manufacturing an optical communication module according to a fifth aspect.

10: Translucent substrate

20: First metal circuit layer

22: Second metal circuit layer

30: Photoelectric conversion element

50: Spacer

70: First patterned photoresist layer

72: Second patterned photoresist layer

80:Open your mouth

Claims (13)

A method for preparing an optical communication module. The steps include: A light-transmitting substrate, a first metal circuit layer and a photoelectric conversion element are provided, wherein the first metal circuit layer is formed on a partial area of an upper surface of the light-transmitting substrate, and the photoelectric conversion element is arranged on the light-transmitting substrate above, and the lower surface of the photoelectric conversion element is coupled to the first metal circuit layer; Coating a first negative photoresist on a surrounding area of the photoelectric conversion element and an upper surface of the photoelectric conversion element, wherein the surrounding area of the photoelectric conversion element includes a partial area of the first metal circuit layer; Expose the first negative photoresist from the bottom of the light-transmissive substrate upward; The first negative photoresist is developed to form a first patterned photoresist layer. The first patterned photoresist layer is formed in the surrounding area of the photoelectric conversion element and exposes the upper surface of the photoelectric conversion element. ; A second metal circuit layer is formed on a partial area of the upper surface of the photoelectric conversion element, an upper surface of the first patterned photoresist layer and a side surface of the first patterned photoresist layer, the second metal circuit layer The layer is coupled to the upper surface of the photoelectric conversion element; Fully coating a second negative photoresist to cover the upper surface of the first patterned photoresist layer, the exposed portion of the upper surface of the photoelectric conversion element and a partial area of the second metal circuit layer; Expose the first patterned photoresist layer and the second negative photoresist from the bottom of the light-transmissive substrate upward; The second negative photoresist is developed to form a second patterned photoresist layer, and the second patterned photoresist layer forms an opening relative to the area above the photoelectric conversion element, and the opening exposes the photoelectric conversion element The exposed portion of the upper surface. The method for preparing an optical communication module as claimed in claim 1, wherein after completion of "forming a second metal circuit layer on a partial area of the upper surface of the photoelectric conversion element and one of the first patterned photoresist layers The surface and one side of the first patterned photoresist layer, the second metal circuit layer is coupled to the upper surface of the photoelectric conversion element", and further includes "forming a spacer on the upper surface of the photoelectric conversion element. another area of the surface. A method for preparing an optical communication module. The steps include: A light-transmitting substrate, a first metal circuit layer and a photoelectric conversion element are provided, wherein the first metal circuit layer is formed on a partial area of an upper surface of the light-transmitting substrate, and the photoelectric conversion element is arranged on the light-transmitting substrate above, and the lower surface of the photoelectric conversion element is coupled to the first metal circuit layer; Coating a first negative photoresist on a surrounding area of the photoelectric conversion element and an upper surface of the photoelectric conversion element, wherein the surrounding area of the photoelectric conversion element includes a partial area of the first metal circuit layer; Expose the first negative photoresist from the bottom of the light-transmissive substrate upward; The first negative photoresist is developed to form a first patterned photoresist layer. The first patterned photoresist layer is formed in the surrounding area of the photoelectric conversion element and exposes the upper surface of the photoelectric conversion element. ; Fully coating a second negative photoresist to cover an upper surface of the first patterned photoresist layer and the exposed portion of the upper surface of the photoelectric conversion element; Expose the first patterned photoresist layer and the second negative photoresist from the bottom of the light-transmissive substrate upward; The second negative photoresist is developed to form a second patterned photoresist layer, and the second patterned photoresist layer forms an opening relative to the area above the photoelectric conversion element, and the opening exposes the photoelectric conversion element The exposed portion of the upper surface. The method for preparing an optical communication module as described in claim 3, wherein after completing "developing the first negative photoresist to form a first patterned photoresist layer, the first patterned photoresist layer is formed on After the step of "exposing the surrounding area of the photoelectric conversion element and exposing the upper surface of the photoelectric conversion element", it further includes the step of "forming a spacer on a partial area of the upper surface of the photoelectric conversion element". A method for preparing an optical communication module. The steps include: Provide a light-transmitting substrate and a photoelectric conversion element, the photoelectric conversion element is arranged on an upper surface of the light-transmitting substrate; Coating a first negative photoresist on a surrounding area of the photoelectric conversion element and an upper surface of the photoelectric conversion element; Expose the first negative photoresist from the bottom of the light-transmissive substrate upward; The first negative photoresist is developed to form a first patterned photoresist layer. The first patterned photoresist layer is formed in the surrounding area of the photoelectric conversion element and exposes the upper surface of the photoelectric conversion element. ; A second metal circuit layer is formed on a partial area of the upper surface of the photoelectric conversion element, an upper surface of the first patterned photoresist layer and a side surface of the first patterned photoresist layer, the second metal circuit layer The layer is coupled to the upper surface of the photoelectric conversion element; Fully coating a second negative photoresist to cover the upper surface of the first patterned photoresist layer, the exposed portion of the upper surface of the photoelectric conversion element and a partial area of the second metal circuit layer; Expose the first patterned photoresist layer and the second negative photoresist from the bottom of the light-transmissive substrate upward; The second negative photoresist is developed to form a second patterned photoresist layer, and the second patterned photoresist layer forms an opening relative to the area above the photoelectric conversion element, and the opening exposes the photoelectric conversion element The exposed portion of the upper surface. The method for preparing an optical communication module as described in claim 5, wherein after completion of "forming a second metal circuit layer on a partial area of the upper surface of the photoelectric conversion element and one of the first patterned photoresist layers The surface and one side of the first patterned photoresist layer, the second metal circuit layer is coupled to the upper surface of the photoelectric conversion element", and further includes "forming a spacer on the upper surface of the photoelectric conversion element. another area of the surface. The method for preparing an optical communication module as described in claim 1, 3 or 5 further includes a step of "removing the light-transmitting substrate" after completing each step. A method for preparing an optical communication module. The steps include: A light-transmitting substrate and a photoelectric conversion element are provided, and the photoelectric conversion element is arranged above the light-transmitting substrate; Coating a first negative photoresist on a surrounding area of the photoelectric conversion element and an upper surface of the photoelectric conversion element; Expose the first negative photoresist from the bottom of the light-transmissive substrate upward; The first negative photoresist is developed to form a first patterned photoresist layer. The first patterned photoresist layer is formed in the surrounding area of the photoelectric conversion element and exposes the upper surface of the photoelectric conversion element. ; A second metal circuit layer is formed on a partial area of the upper surface of the photoelectric conversion element, an upper surface of the first patterned photoresist layer and a side surface of the first patterned photoresist layer, the second metal circuit layer The layer is coupled to the upper surface of the photoelectric conversion element; Fully coating a second negative photoresist to cover the upper surface of the first patterned photoresist layer, the exposed portion of the upper surface of the photoelectric conversion element and a partial area of the second metal circuit layer; Expose the first patterned photoresist layer and the second negative photoresist from the bottom of the light-transmissive substrate upward; The second negative photoresist is developed to form a second patterned photoresist layer, and the second patterned photoresist layer forms an opening relative to the area above the photoelectric conversion element, and the opening exposes the photoelectric conversion element The exposed portion of the upper surface; remove the light-transmitting substrate; A first metal circuit layer is formed, and the first metal circuit layer is coupled to the lower surface of the photoelectric conversion element. The method for preparing an optical communication module as described in claim 8, wherein after completion of "forming a second metal circuit layer on a partial area of the upper surface of the photoelectric conversion element and one of the first patterned photoresist layers The surface and one side of the first patterned photoresist layer, the second metal circuit layer is coupled to the upper surface of the photoelectric conversion element", and further includes "forming a spacer on the upper surface of the photoelectric conversion element. another area of the surface. A method for preparing an optical communication module. The steps include: A light-transmitting substrate and a photoelectric conversion element are provided, and the photoelectric conversion element is arranged above the light-transmitting substrate; Coating a first negative photoresist on a surrounding area of the photoelectric conversion element and an upper surface of the photoelectric conversion element; Expose the first negative photoresist from the bottom of the light-transmissive substrate upward; The first negative photoresist is developed to form a first patterned photoresist layer. The first patterned photoresist layer is formed in the surrounding area of the photoelectric conversion element and exposes the upper surface of the photoelectric conversion element. ; Fully coating a second negative photoresist to cover an upper surface of the first patterned photoresist layer and the exposed portion of the upper surface of the photoelectric conversion element; Expose the first patterned photoresist layer and the second negative photoresist from the bottom of the light-transmissive substrate upward; The second negative photoresist is developed to form a second patterned photoresist layer, and the second patterned photoresist layer forms an opening relative to the area above the photoelectric conversion element, and the opening exposes the photoelectric conversion element The exposed portion of the upper surface. The method for preparing an optical communication module as claimed in claim 10, wherein after completing "developing the first negative photoresist to form a first patterned photoresist layer, the first patterned photoresist layer is formed on After the step of "exposing the surrounding area of the photoelectric conversion element and exposing the upper surface of the photoelectric conversion element", it further includes the step of "forming a spacer on a partial area of the upper surface of the photoelectric conversion element". The method for preparing an optical communication module as described in claim 1, 3, 5, 8 or 10, wherein the light-transmitting substrate is a transparent sheet or a filter. The method for preparing an optical communication module as described in claim 1, 3, 5, 8 or 10, wherein the photoelectric conversion element is a laser element or a light receiving element.

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