CN115747751A - Preparation method of silicon oxide - Google Patents
Preparation method of silicon oxide Download PDFInfo
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- CN115747751A CN115747751A CN202211423328.5A CN202211423328A CN115747751A CN 115747751 A CN115747751 A CN 115747751A CN 202211423328 A CN202211423328 A CN 202211423328A CN 115747751 A CN115747751 A CN 115747751A
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- silicon oxide
- vacuumizing
- gas flow
- sccm
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 229910052814 silicon oxide Inorganic materials 0.000 title claims abstract description 47
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000007789 gas Substances 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 28
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 21
- 238000010926 purge Methods 0.000 claims abstract description 20
- 230000005641 tunneling Effects 0.000 claims abstract description 15
- 239000001257 hydrogen Substances 0.000 claims abstract description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 11
- 239000011261 inert gas Substances 0.000 claims abstract description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 11
- 230000001590 oxidative effect Effects 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 9
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001272 nitrous oxide Substances 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 5
- 238000002161 passivation Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000011109 contamination Methods 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Formation Of Insulating Films (AREA)
Abstract
The invention relates to the technical field of photovoltaic module preparation methods, and particularly discloses a silicon oxide preparation method, which comprises the steps of preparing a tunneling silicon oxide layer on a cleaned silicon wafer according to the steps S1-S14, and then preparing a doped polycrystalline silicon layer; wherein, the steps S1 to S14 are as follows: loading the cleaned silicon wafer carrier into a process chamber; vacuumizing and heating to 200-300 ℃; purging with nitrogen; vacuumizing; introducing inert gas, and starting the microwave, wherein the gas flow is 100-500 sccm, and the time is 30-150 s; vacuumizing; purging with nitrogen; vacuumizing; introducing oxidizing gas with the gas flow rate of 50 sccm-200 sccm for 10-100 s; vacuumizing; purging with nitrogen; introducing hydrogen, starting microwave, wherein the gas flow is 100-500 sccm, and the time is 30-150 s; vacuumizing; and (6) purging with nitrogen. The method provided by the invention optimizes the silicon oxide preparation process by the PECVD method, can ensure the cleanness of the surface of the silicon wafer before the growth of the tunneling silicon oxide layer, can passivate dangling bonds in the silicon oxide, and can obtain the high-quality tunneling silicon oxide layer.
Description
Technical Field
The invention relates to the technical field of preparation methods of photovoltaic modules, in particular to a preparation method of silicon oxide.
Background
In the preparation process of the N-type Topcon battery, the key technology is to prepare an ultrathin tunneling silicon oxide layer and a highly doped polysilicon thin layer on the back of the battery, and the ultrathin tunneling silicon oxide layer and the highly doped polysilicon thin layer form a passivation contact structure together. One of the commonly used methods of fabrication is PECVD. The process comprises the following steps: entering a boat, introducing oxidizing gas to prepare silicon oxide, vacuumizing, introducing gas to prepare a doped polycrystalline silicon layer, taking out the boat, cleaning and vacuumizing. One of the key steps in the above process steps is the preparation of a silicon oxide layer. Generally, after a silicon wafer is cleaned, the silicon wafer is loaded to a slide boat by an automatic manipulator, the slide boat carrying the cleaned silicon wafer enters a process chamber, and after the process chamber is vacuumized and heated to a process temperature, oxidizing gas is introduced to grow silicon oxide. And after the silicon oxide growth process is finished, carrying out a subsequent doped polycrystalline silicon layer preparation process.
In actual production, a silicon wafer cleaning process, a tunneling silicon oxide layer preparation process and a polycrystalline silicon layer doping process are two different processes and are completed by different equipment. After the silicon wafer is cleaned, the silicon wafer needs to be waited for a period of time in an air environment, which causes contamination of the surface of the silicon wafer and produces a natural oxide layer with extremely poor quality on the surface of the silicon wafer. After entering a process chamber, oxidizing gas is directly introduced to prepare a silicon oxide layer, so that contamination and a natural oxide layer on the surface of a silicon wafer cannot be avoided, which are reasons for influencing the passivation effect of the silicon wafer so as to reduce the conversion efficiency of a battery; in addition, since some Si is not bonded to oxygen atoms at the Si-Si interface during the growth of silicon oxide, these recombination centers also affect the passivation effect and thus reduce the cell conversion efficiency.
Disclosure of Invention
In view of this, the present application provides a method for preparing silicon oxide, which aims to solve the problem that when a PECVD method is used to prepare a tunneling silicon oxide layer of an N-type topcon cell, the poor quality of silicon oxide affects the passivation effect and thus the cell conversion efficiency.
In order to achieve the purpose, the invention provides the following technical scheme:
a silicon oxide preparation method comprises the steps of preparing a tunneling silicon oxide layer on a cleaned silicon wafer according to the steps S1-S14, and then preparing a doped polycrystalline silicon layer; wherein, the steps S1 to S14 are as follows:
s1, loading the cleaned silicon wafer carrier into a process chamber;
s2, vacuumizing and heating to 200-300 ℃;
s3, nitrogen purging;
s4, vacuumizing;
s5, introducing inert gas, and starting microwaves, wherein the gas flow is 100-500 sccm, and the duration is 30-150 s;
s6, vacuumizing;
s7, nitrogen purging;
s8, vacuumizing;
s9, introducing oxidizing gas, wherein the gas flow is 50-200 sccm, and the time is 10-100 s;
s10, vacuumizing;
s11, nitrogen purging;
s12, introducing hydrogen, starting microwaves, wherein the gas flow is 100-500 sccm, and the duration is 30-150 s;
s13, vacuumizing;
s14, nitrogen purging.
Optionally, the inert gas in step S5 is argon.
Optionally, the oxidizing gas in step S9 is oxygen or nitrous oxide.
Optionally, the temperature in the step S2 is controlled to be 220 ℃ to 270 ℃.
Optionally, the temperature in step S2 is controlled at 255 ℃.
Optionally, the gas flow rate in step S5 is 200 to 380sccm, and the duration is 60 to 120S.
Optionally, the gas flow rate in step S9 is 80-150 sccm, and the duration is 55-85S.
Optionally, the gas flow rate in step S12 is 210 to 360sccm, and the duration is 55 to 110S.
Compared with the prior art, the silicon oxide preparation method provided by the invention optimizes the silicon oxide preparation process by a chemical PECVD method, wherein after a slide boat for bearing the cleaned silicon wafer enters a process chamber, inert gas is firstly introduced, atoms or ion groups bombard the surface of the silicon wafer after the inert gas is ionized, the contamination and the natural oxide layer on the surface of the silicon wafer are removed, then oxidizing gas is introduced, and after one-step oxidation is completed, hydrogen is introduced for passivation treatment. The method can ensure the cleanness of the surface of the silicon wafer before the growth of the tunneling silicon oxide layer, and the subsequent hydrogen passivation treatment can passivate dangling bonds in the silicon oxide, thereby obtaining a high-quality tunneling silicon oxide layer, ensuring a good passivation effect and improving the conversion efficiency of the battery.
Detailed Description
The invention provides a preparation method of silicon oxide.
The technical solutions of the present application will be described clearly and completely with reference to the embodiments of the present application, and it should be understood that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making any creative effort belong to the protection scope of the present application.
The first embodiment is as follows:
the embodiment of the invention provides a silicon oxide preparation method, which comprises the steps of preparing a tunneling silicon oxide layer on a cleaned silicon wafer according to the steps S1-S14, and then preparing a doped polycrystalline silicon layer; wherein, the steps S1 to S14 are as follows:
s1, loading the cleaned silicon wafer carrier into a process chamber;
s2, vacuumizing and heating to 200-300 ℃;
s3, nitrogen purging;
s4, vacuumizing;
s5, introducing inert gas, starting microwaves, and enabling the gas flow to be 100-500 sccm for 30-150 s;
s6, vacuumizing;
s7, nitrogen purging;
s8, vacuumizing;
s9, introducing oxygen, wherein the gas flow is 50-200 sccm, and the time is 10-100 s;
s10, vacuumizing;
s11, nitrogen purging;
s12, introducing hydrogen, starting microwaves, wherein the gas flow is 100-500 sccm and the duration is 30-150 s;
s13, vacuumizing;
s14, nitrogen purging.
Example two:
the second embodiment of the invention also provides a silicon oxide preparation method, which comprises the steps of preparing a tunneling silicon oxide layer on a cleaned silicon wafer according to the steps S1-S14, and then preparing a doped polycrystalline silicon layer; wherein, the steps S1 to S14 are as follows:
s1, loading the cleaned silicon wafer carrier into a process chamber;
s2, vacuumizing, and heating to 260 ℃;
s3, nitrogen purging;
s4, vacuumizing;
s5, introducing argon, starting microwaves, and enabling the gas flow to be 235sccm for 105s;
s6, vacuumizing;
s7, nitrogen purging;
s8, vacuumizing;
s9, introducing nitrous oxide, wherein the gas flow is 105sccm, and the time duration is 70s;
s10, vacuumizing;
s11, nitrogen purging;
s12, introducing hydrogen, starting microwaves, and enabling the gas flow to be 275sccm for 85s;
s13, vacuumizing;
s14, nitrogen purging.
The working principle and the technical effect of the embodiment of the invention are as follows:
the final purpose of the embodiment of the invention is to improve the quality of the tunneling silicon oxide layer and improve the passivation effect so as to improve the conversion efficiency of the battery. The method comprises the following specific steps: after a slide boat bearing the cleaned silicon wafer enters a process chamber, vacuumizing the process chamber, introducing inert gas after the temperature rise step, bombarding the surface of the silicon wafer after the inert gas is ionized, and cleaning the contamination and the natural oxidation layer on the surface of the silicon wafer; vacuumizing again, cleaning with nitrogen, vacuumizing, and introducing oxidizing gas for oxidation; and introducing hydrogen after the oxidation is finished, and passivating the interface dangling bond. And after the steps are completed, the subsequent preparation of the doped polysilicon layer is carried out.
The embodiment of the invention is additionally provided with two main steps:
the method comprises the following steps: after the carrier boat carrying the cleaned silicon wafer enters the PECVD process chamber, the temperature is raised, and after the pipeline cleaning work, inert gas (argon) is firstly introduced, and the microwave is started. Under the action of microwave, the argon gas is ionized, and the ionized argon atoms bombard the surface of the silicon wafer, so that the contamination attached to the surface of the silicon wafer and the grown natural oxide layer are effectively removed, and the clean surface of the silicon wafer is obtained.
Step two: after the preparation of the silicon oxide is completed, hydrogen is introduced and the microwaves are started. Under the action of microwave, hydrogen is ionized, and hydrogen ions/atomic groups pass through silicon oxide to passivate dangling bonds on the interface of silicon and silicon oxide.
Removing a natural oxide layer with large contamination and defect density on the surface of the silicon wafer; and passivating the dangling bond on the silicon-silicon oxide interface. Through the use of the two steps, a high-quality tunneling silicon oxide layer is obtained, the passivation effect is improved, and the battery conversion efficiency is improved.
In the description of the present application, unless otherwise expressly specified or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral part; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship.
The previous description of the disclosed aspects is provided to enable any person skilled in the art to make or use the present application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other aspects without departing from the scope of the application. Thus, the present application is not intended to be limited to the aspects shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
The foregoing description has been presented for purposes of illustration and description. Furthermore, the description is not intended to limit embodiments of the application to the form disclosed herein. While a number of example aspects and embodiments have been discussed above, those of skill in the art will recognize certain variations, modifications, alterations, additions and sub-combinations thereof.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modifications, equivalents and the like that are within the spirit and principle of the present application should be included in the scope of the present application.
Claims (8)
1. A silicon oxide preparation method is characterized by comprising the steps of preparing a tunneling silicon oxide layer on a cleaned silicon wafer according to the steps S1-S14, and then preparing a doped polycrystalline silicon layer; wherein, the steps S1 to S14 are as follows:
s1, loading the cleaned silicon wafer carrier into a process chamber;
s2, vacuumizing and heating to 200-300 ℃;
s3, nitrogen purging;
s4, vacuumizing;
s5, introducing inert gas, and starting microwaves, wherein the gas flow is 100-500 sccm, and the duration is 30-150 s;
s6, vacuumizing;
s7, nitrogen purging;
s8, vacuumizing;
s9, introducing oxidizing gas, wherein the gas flow is 50-200 sccm, and the time is 10-100 s;
s10, vacuumizing;
s11, nitrogen purging;
s12, introducing hydrogen, starting microwaves, wherein the gas flow is 100-500 sccm and the duration is 30-150 s;
s13, vacuumizing;
s14, nitrogen purging.
2. The method for producing silicon oxide according to claim 1, wherein the inert gas in step S5 is argon gas.
3. The method for producing silicon oxide according to claim 1, wherein the oxidizing gas in step S9 is oxygen or nitrous oxide.
4. The method for producing silicon oxide according to claim 1, 2 or 3, wherein the temperature in step S2 is controlled to 220 to 270 ℃.
5. The method for producing silicon oxide according to claim 4, wherein the temperature in step S2 is controlled to 255 ℃.
6. The method for producing silicon oxide according to claim 4, wherein the gas flow rate in step S5 is 200 to 380sccm for 60 to 120 seconds.
7. The method for producing silicon oxide according to claim 4, wherein the gas flow rate in step S9 is 80 to 150sccm for 55 to 85S.
8. The method for producing silicon oxide according to claim 4, wherein the gas flow rate in step S12 is 210 to 360sccm for 55 to 110 seconds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211423328.5A CN115747751A (en) | 2022-11-15 | 2022-11-15 | Preparation method of silicon oxide |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211423328.5A CN115747751A (en) | 2022-11-15 | 2022-11-15 | Preparation method of silicon oxide |
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| CN115747751A true CN115747751A (en) | 2023-03-07 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103606594A (en) * | 2013-11-20 | 2014-02-26 | 英利能源（中国）有限公司 | Silicon chip cleaning method, and preparation method of anti-reflecting film |
| CN103972327A (en) * | 2013-01-30 | 2014-08-06 | 应用材料公司 | In situ silicon surface pre-cleaning for high performance passivation of silicon solar cells |
| CN105355561A (en) * | 2015-11-03 | 2016-02-24 | 大连理工大学 | Surface pretreatment method for reducing interface state density of SiC MOS |
| CN108598212A (en) * | 2018-03-30 | 2018-09-28 | 横店集团东磁股份有限公司 | A kind of method of solar cell inactivating |
| CN113930748A (en) * | 2020-07-13 | 2022-01-14 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of solar cell, solar cell and photovoltaic module |
-
2022
- 2022-11-15 CN CN202211423328.5A patent/CN115747751A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103972327A (en) * | 2013-01-30 | 2014-08-06 | 应用材料公司 | In situ silicon surface pre-cleaning for high performance passivation of silicon solar cells |
| CN103606594A (en) * | 2013-11-20 | 2014-02-26 | 英利能源（中国）有限公司 | Silicon chip cleaning method, and preparation method of anti-reflecting film |
| CN105355561A (en) * | 2015-11-03 | 2016-02-24 | 大连理工大学 | Surface pretreatment method for reducing interface state density of SiC MOS |
| CN108598212A (en) * | 2018-03-30 | 2018-09-28 | 横店集团东磁股份有限公司 | A kind of method of solar cell inactivating |
| CN113930748A (en) * | 2020-07-13 | 2022-01-14 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of solar cell, solar cell and photovoltaic module |
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