CN103606594A - Silicon chip cleaning method, and preparation method of anti-reflecting film - Google Patents
Silicon chip cleaning method, and preparation method of anti-reflecting film Download PDFInfo
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- CN103606594A CN103606594A CN201310588900.8A CN201310588900A CN103606594A CN 103606594 A CN103606594 A CN 103606594A CN 201310588900 A CN201310588900 A CN 201310588900A CN 103606594 A CN103606594 A CN 103606594A
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- silicon chip
- cleaning
- pecvd
- antireflective coating
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 94
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 94
- 239000010703 silicon Substances 0.000 title claims abstract description 93
- 238000000034 method Methods 0.000 title claims abstract description 83
- 238000004140 cleaning Methods 0.000 title claims abstract description 49
- 238000002360 preparation method Methods 0.000 title abstract description 13
- 239000007789 gas Substances 0.000 claims abstract description 20
- -1 halogen hydride Chemical class 0.000 claims abstract description 10
- 239000001257 hydrogen Substances 0.000 claims abstract description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 42
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 35
- 238000000151 deposition Methods 0.000 claims description 33
- 239000006117 anti-reflective coating Substances 0.000 claims description 29
- 229910021529 ammonia Inorganic materials 0.000 claims description 21
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 18
- 229910000077 silane Inorganic materials 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 229910000039 hydrogen halide Inorganic materials 0.000 claims description 16
- 239000012433 hydrogen halide Substances 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 4
- 230000002045 lasting effect Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 10
- 239000003344 environmental pollutant Substances 0.000 abstract description 7
- 231100000719 pollutant Toxicity 0.000 abstract description 7
- 229910001507 metal halide Inorganic materials 0.000 abstract description 6
- 150000005309 metal halides Chemical class 0.000 abstract description 6
- 238000002161 passivation Methods 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 6
- 229910021645 metal ion Inorganic materials 0.000 abstract description 3
- 229910052736 halogen Inorganic materials 0.000 abstract 5
- 239000003814 drug Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 4
- 239000013043 chemical agent Substances 0.000 description 3
- 239000012459 cleaning agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a silicon chip cleaning method, and a preparation method of an anti-reflecting film. The cleaning method comprises: step 1, placing a silicon chip in a process cavity of a PEVCD device for heating to a predetermined temperature; and step 2, allowing a halogen hydride gas to get into the surface of the silicon chip, and enabling the halogen hydride gas to get ionized. In the PEVCD process cavity, the halogen hydride gas is ionized, ionized hydrogen ions are utilized to perform passivation on the silicon chip and remove oxides on the surface of the silicon chip; ionized halogen ions are utilized to react with metal ions on the surface of the silicon chip to form gasified metal halides, and the formed metal halides are exhausted out of the PEVCD process cavity with the non-reacted halogen hydride gas; the above cleaning method is implemented in the PEVCD process cavity, therefore, no cleaning equipment and cleaning medicaments needed for chemical cleaning are required; the silicon chip which is cleaned by using the method is effectively prevented from negative effects generated to the silicon chip by pollutants or the oxides.
Description
Technical field
The present invention relates to area of solar cell, in particular to a kind of preparation method of method for cleaning and antireflective coating of silicon chip.
Background technology
As the new forms of energy of clean environment firendly, the application of solar cell is more and more universal.The production technology more complicated of solar battery sheet, in brief, the production process of current solar battery sheet can be divided into following key step:
Step S11, surface wool manufacturing and chemical cleaning silicon chip surface, form rough structure by chemical reaction at the silicon chip surface of otherwise smooth, to strengthen the absorption of light;
Step S12, diffusion system knot, the silicon chip of P type is put into diffusion furnace, make N-type foreign atom silicon chip surface layer, by the space between silicon atom, to silicon chip internal penetration, spread, form PN junction, make electronics and hole not return original place after flowing, so just form electric current, namely make silicon chip there is photovoltaic effect;
Step S13, plasma etching, remove in diffusion process, at silicon chip edge, form by the conductive layer of PN junction short circuit;
Step S14, PECVD (plasma enhanced chemical vapor deposition, the chemical vapor deposition that plasma strengthens) depositing antireflection film,, in vacuum chamber, adopts the method for radio frequency or microwave, by HN
3and SiH
4after ionization, be deposited on silicon chip, utilize film interference principle, reduce reflection of light, play passivation, increase short circuit current and the power output of battery, improve conversion efficiency;
Step S15, print electrode, adopt silver slurry print positive electrode and back electrode, adopt aluminium paste printing back surface field, with collected current and play the effect of conduction;
Step S16, sintering, at high temperature make printing electrode and silicon chip between form ohmic contact.
As can be seen from the above step, as the step 1 of depositing antireflection film, after wet etching step, because being to be connected by manipulator between wet-method etching equipment and silicon nitride filming equipment, silicon chip must be exposed in air, therefore easily cause contamination and the oxidation of silicon chip surface, affect battery efficiency; In addition, in producing, easily there is variety of issue, probably occur could again putting into production after the silicon chip placement time of several hours even several days after wet etching.At present, before making silicon nitride film, for fear of harmful effect, generally adopt HF solution cleaning silicon chip, this cleaning process is not only loaded down with trivial details but also increased the production cost of solar cell.
Summary of the invention
The present invention aims to provide a kind of preparation method of method for cleaning and antireflective coating of silicon chip, to solve the loaded down with trivial details problem of silicon chip method for cleaning in prior art.
To achieve these goals, according to an aspect of the present invention, provide a kind of method for cleaning of silicon chip, method for cleaning comprises: step S1, and the process cavity that silicon chip is placed in to PECVD equipment is preheated to predetermined temperature; Step S2, passes into hydrogen halide to the surface of silicon chip, and makes hydrogen halide generation plasma.
Further, above-mentioned steps S1 carries out in nitrogen atmosphere, and predetermined temperature is 150～250 ℃.
Further, above-mentioned hydrogen halides is HCl, and the flow of HCl gas is that 200～2000sccm, temperature are 250～450 ℃, and the lasting time of step S2 is 10～500s, preferably 30～300s.
Further, at above-mentioned steps S2, making to apply pulse duration in hydrogen halide generation plasma process is the microwave that 5～25ms, power are 800～2000W.
Further, above-mentioned PECVD equipment is board-like PECVD equipment or tubular type PECVD equipment.
According to a further aspect in the invention, provide a kind of manufacture method of antireflective coating, this manufacture method comprises: adopt above-mentioned method for cleaning cleaning silicon chip; Surface deposition antireflective coating at silicon chip.
Further, above-mentioned antireflective coating is silicon nitride film, and the step of depositing antireflection film adopts pecvd process to implement, and implements in same PECVD equipment with the step of cleaning silicon chip.
Further, the step of above-mentioned depositing antireflection film comprises to the front surface of silicon chip and passes into flow-rate ratio 1.8:1～4:1 ammonia and silane.
Further, the flow of above-mentioned ammonia is 500～2000sccm, preferred 900～1800sccm, and the duration is 1～5min, and depositing temperature is 300～550 ℃, and deposition pressure is 0.15～0.45mbar.
The pulse duration of the microwave that further, above-mentioned setting PECVD equipment sends is that 5～25ms, power are 500～2000W.
Apply technical scheme of the present invention, in pecvd process chamber by hydrogen halide plasma, utilize the hydrogen ion of plasma to carry out passivation to silicon chip, remove the oxide of silicon chip surface, utilize the halide ion of plasma and the metal ion of silicon chip surface to react the metal halide that forms gaseous state, formed metal halide is along with unreacted hydrogen halide is discharged pecvd process chamber; Therefore above-mentioned method for cleaning is implemented in pecvd process chamber, only needs setting program, does not need the required cleaning equipment of chemical cleaning and cleaning agent, has saved and has cleaned cost, has simplified cleaning process, reduced the consumption of chemical agent; Through the silicon chip after above-mentioned cleaning, oxide-film or the pollutant on surface are removed, and then the negative effect of effectively having avoided pollutant or oxide to produce silicon chip in carrying out follow-up processes step.
Except object described above, feature and advantage, the present invention also has other object, feature and advantage.Below with reference to embodiment, the present invention is further detailed explanation.
Embodiment
It should be noted that, in the situation that not conflicting, embodiment and the feature in embodiment in the application can combine mutually.Below in conjunction with embodiment, describe the present invention in detail.
In a kind of typical execution mode of the present invention, a kind of method for cleaning of silicon chip is provided, this method for cleaning comprises: step S1, the process cavity that silicon chip is placed in to PECVD equipment is preheated to predetermined temperature; Step S2, passes into hydrogen halide to the surface of silicon chip, and makes hydrogen halide generation plasma.
Above-mentioned method for cleaning, in pecvd process chamber by hydrogen halide plasma, utilize the hydrogen ion of plasma to carry out passivation to silicon chip, remove the oxide of silicon chip surface, utilize the halide ion of plasma and the metal ion of silicon chip surface to react the metal halide that forms gaseous state, formed metal halide is along with unreacted hydrogen halide is discharged pecvd process chamber; Therefore above-mentioned method for cleaning is implemented in pecvd process chamber, only needs setting program, does not need the required cleaning equipment of chemical cleaning and cleaning agent, has saved and has cleaned cost, has simplified cleaning process, reduced the consumption of chemical agent; Through the silicon chip after above-mentioned cleaning, oxide-film or the pollutant on surface are removed, and then the negative effect of effectively having avoided pollutant or oxide to produce silicon chip in carrying out follow-up processes step.
Above-mentioned is mainly for silicon chip is heated evenly by silicon chip preheating, and then make follow-uply at silicon chip surface, to form uniform silicon nitride film, as long as therefore above-mentioned predetermined temperature can be realized above-mentioned technique effect, the application is in order to carry out effective combination by warm and plasma process better, preferably above-mentioned steps S1 carries out in nitrogen atmosphere, and predetermined temperature is 150～250 ℃.
The hydrogen halide that the present invention passes into is mainly to react for the oxide with silicon chip surface or pollutant, for guarantee silicon chip not can with halide generation overreaction, preferred above-mentioned hydrogen halide is HCl gas, and the flow of preferred above-mentioned HCl gas is that 200～2000sccm, temperature are 250～450 ℃, the lasting time of step S2 is 10～500s, preferably 30～300s.
In plasma process, in order to make appropriate hydrogen halide or HCl gas generation plasma, on the basis of cost that practices every conceivable frugality, realize higher plasma effect, preferably in above-mentioned steps S2, making to apply pulse duration in described hydrogen halide generation plasma process is the microwave that 5～25ms, power are 800～2000W.
The PECVD equipment of implementing the application's plasma can adopt the conventional various PECVD equipment in this area, and preferred above-mentioned PECVD equipment is board-like PECVD equipment or tubular type PECVD equipment.
In the typical execution mode of another kind of the present invention, a kind of manufacture method of antireflective coating is provided, this manufacture method comprises: adopt above-mentioned method for cleaning cleaning silicon chip; Surface deposition antireflective coating at silicon chip.Adopt above-mentioned method for cleaning by after silicon chip cleaning, oxide layer or the pollutant of silicon chip surface are removed, again after depositing antireflection film, can improve the inactivating performance of antireflective coating, and then can greatly promote short circuit current and the open circuit voltage of solar cell, thereby promote the photoelectric conversion efficiency of solar cell.
Antireflective coating of the present invention can adopt the conventional silicon nitride film in this area, silicon oxide film or silicon nitride and Si oxide compound film, preferred above-mentioned antireflective coating is silicon nitride film, the step of depositing antireflection film adopts pecvd process to implement, and implements in same PECVD equipment with method for cleaning.Because the scale removal process of silicon chip and the deposition process of antireflective coating can utilize same equipment to implement, therefore, the present invention preferably adopts PECVD equipment to carry out the making of antireflective coating, thereby further simplified prior art, utilizes chemical agent to clean the manufacture craft of making again antireflective coating afterwards.
The present invention a kind of preferred embodiment in, the step of above-mentioned depositing antireflection film comprises to the front surface of silicon chip and passes into flow-rate ratio 1.8:1～4:1 ammonia and silane.The refractive index of formed antireflective coating is between 1.95～2.18 under these conditions, thus anti-reflective effect and passivation effect all comparatively desirable.
Utilizing aforesaid way to control on the basis of refractive index of antireflective coating, the flow of described ammonia is 500～2000sccm, preferred 900～1800sccm, and the duration is 1～5min, and depositing temperature is 300～550 ℃, and deposition pressure is 0.15～0.45mbar.
Under above-mentioned condition, the thickness of formed antireflective coating and density are all comparatively desirable, have further optimized physical property and the passivation effect of antireflective coating.
In plasma-deposited process, in order to make appropriate ammonia and silane gas generation plasma, on the basis of cost that practices every conceivable frugality, realize higher plasma effect, the pulse duration of the microwave that setting PECVD equipment sends is that 5～25ms, power are 500～2000W.
Below with reference to embodiment and comparative example, further illustrate the beneficial effect of this law.
By place the silicon chip of a period of time in air after surface wool manufacturing, chemical cleaning, diffusion system knot, plasma etching, carry out the processing of embodiment 1 to 6, concrete processing procedure is as follows:
Embodiment 1
Above-mentioned silicon chip is placed in to the board-like pecvd process chamber that model is Roth & Rau XL, and pass into nitrogen in this process cavity, the pulse duration of setting the microwave of this board-like PECVD is that 8ms, power are 1200W, then silicon chip is preheated to 200 ℃, then to silicon chip surface, pass into HCl gas, wherein the flow of this HCl gas is 1000sccm, and temperature is 350 ℃, continues to stop passing into HCl and nitrogen after 250s; Then the pulse duration of setting the microwave of this board-like PECVD is that 6ms, power are 1200W, depositing temperature is 380 ℃, deposition pressure is 0.25mbar, to the front surface of silicon chip, pass into the silane that ammonia that flow is 1200sccm and flow are 400sccm, continue to stop passing into ammonia and silane after 3min, complete the preparation of the antireflective coating of embodiment 1.
Embodiment 2
Above-mentioned silicon chip is placed in to the board-like pecvd process chamber that model is Roth & Rau XL, and pass into nitrogen in this process cavity, the pulse duration of setting the microwave of this board-like PECVD is that 5ms, power are 2000W, then silicon chip is preheated to 250 ℃, then to silicon chip surface, pass into HCl gas, wherein the flow of this HCl gas is 200sccm, and temperature is 450 ℃, continues to stop passing into HCl and nitrogen after 500s; Then the pulse duration of setting the microwave of this board-like PECVD is that 10ms, power are 1000W, depositing temperature is 400 ℃, deposition pressure is 0.35mbar, to the front surface of silicon chip, pass into the silane that ammonia that flow is 1800sccm and flow are 800sccm, continue to stop passing into ammonia and silane after 1min, complete the preparation of the antireflective coating of embodiment 2.
Embodiment 3
Above-mentioned silicon chip is placed in to the board-like pecvd process chamber that model is Roth & Rau XL, and pass into nitrogen in this process cavity, the pulse duration of setting the microwave of this board-like PECVD is that 25ms, power are 800W, then silicon chip is preheated to 150 ℃, then to silicon chip surface, pass into HCl gas, wherein the flow of this HCl gas is 2000sccm, and temperature is 250 ℃, continues to stop passing into HCl and nitrogen after 10s; Then the pulse duration of setting the microwave of this board-like PECVD is that 15ms, power are 800W, depositing temperature is 300 ℃, deposition pressure is 0.45mbar, to the front surface of silicon chip, pass into the silane that ammonia that flow is 900sccm and flow are 500sccm, continue to stop passing into ammonia and silane after 5min, complete the preparation of the antireflective coating of embodiment 3.
Embodiment 4
Above-mentioned silicon chip is placed in to the board-like pecvd process chamber that model is Roth & Rau XL, the pulse duration of setting the microwave of this board-like PECVD is that 15ms, power are 1500W, then silicon chip is preheated to 220 ℃, then to silicon chip surface, pass into HCl gas, wherein the flow of this HCl gas is 1500sccm, temperature is 300 ℃, continues to stop passing into HCl and nitrogen after 300s; Then the pulse duration of setting the microwave of this board-like PECVD is that 25ms, power are 500W, depositing temperature is 550 ℃, deposition pressure is 0.15mbar, to the front surface of silicon chip, pass into the silane that ammonia that flow is 1200sccm and flow are 400sccm, continue to stop passing into ammonia and silane after 3min, complete the preparation of the antireflective coating of embodiment 4.
Embodiment 5
Above-mentioned silicon chip is placed in to the board-like pecvd process chamber that model is Roth & Rau XL, the pulse duration of setting the microwave of this board-like PECVD is that 8ms, power are 1200W, then silicon chip is preheated to 120 ℃, then to silicon chip surface, pass into HCl gas, wherein the flow of this HCl gas is 2200sccm, temperature is 220 ℃, continues to stop passing into HCl and nitrogen after 220s; Then the pulse duration of setting the microwave of this board-like PECVD is that 10ms, power are 2000W, depositing temperature is 380 ℃, deposition pressure is 0.25mbar, to the front surface of silicon chip, pass into the silane that ammonia that flow is 1200sccm and flow are 400sccm, continue to stop passing into ammonia and silane after 3min, complete the preparation of the antireflective coating of embodiment 5.
Comparative example 1
Above-mentioned silicon chip is placed in to the board-like pecvd process chamber of Roth & Rau XL, the pulse duration of setting the microwave of this board-like PECVD is that 6ms, power are 1200W, depositing temperature is 380 ℃, deposition pressure is 0.25mbar, to the front surface of silicon chip, pass into the silane that ammonia that flow is 1200sccm and flow are 400sccm, continue to stop passing into ammonia and silane after 3min, complete the preparation of the antireflective coating of comparative example 1.
Comparative example 2
It is in 10% HF solution that above-mentioned silicon chip is immersed in to quality percentage composition, takes out, and adopt the silicon chip after washed with de-ionized water is taken out after 2min, then the silicon chip after cleaning is placed in to nitrogen atmosphere, at 150 ℃, dries; Then the silicon chip after drying is placed in to the board-like pecvd process chamber of Roth & Rau XL, the pulse duration of setting the microwave of this board-like PECVD is that 6ms, power are 1200W, depositing temperature is 380 ℃, deposition pressure is 0.25mbar, to the front surface of silicon chip, pass into the silane that ammonia that flow is 1200sccm and flow are 300sccm,, continue to stop passing into ammonia and silane after 3min, complete the preparation of the antireflective coating of comparative example 2.
The silicon chip that embodiment 1 to 5 and comparative example 1 to 2 are completed after antireflective coating is made adopts identical technique to print electrode and sintering, obtain the solar battery sheet of embodiment 1 to 5 and comparative example 1 to 2, adopt Halm test system and test just open circuit voltage (Uoc), short circuit current (Isc), series resistance (Rs), parallel resistance (Rsh), fill factor, curve factor (FF), the conversion efficiency (Eta) of the solar battery sheet of preparation, and then the photoelectric conversion efficiency of sign solar battery sheet, measurement result is in Table 1.
Table 1
| ? | Short circuit current (A) | Open circuit voltage (V) | Photoelectric conversion efficiency (%) |
| Embodiment 1 | 8.606 | 0.630 | 17.42% |
| Embodiment 2 | 8.612 | 0.629 | 17.40% |
| Embodiment 3 | 8.607 | 0.630 | 17.42% |
| Embodiment 4 | 8.608 | 0.629 | 17.40% |
| Embodiment 5 | 8.611 | 0.629 | 17.40% |
| Comparative example 1 | 8.598 | 0.627 | 17.32% |
| Comparative example 2 | 8.612 | 0.630 | 17.43% |
The solar battery sheet of embodiment 1 to 5 adopted the application's method for cleaning to process before depositing antireflection film, by the data in table 1, can be found out, open circuit voltage and the short circuit current of the solar battery sheet of embodiment 1 to 5 have obvious lifting with respect to comparative example 1 and 2, and the lifting of photoelectric conversion efficiency is also comparatively obvious; Embodiment 1 to 5 compares quite with the data of comparative example 2, but process is obviously easy, and cost consumption is also lower, and there is no the pollution of chemical solvent.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. a method for cleaning for silicon chip, is characterized in that, described method for cleaning comprises:
Step S1, the process cavity that silicon chip is placed in to PECVD equipment is preheated to predetermined temperature;
Step S2, passes into hydrogen halide to the surface of silicon chip, and makes described hydrogen halide generation plasma.
2. method for cleaning according to claim 1, is characterized in that, described step S1 carries out in nitrogen atmosphere, and described predetermined temperature is 150～250 ℃.
3. method for cleaning according to claim 1, is characterized in that, described hydrogen halides is HCl, and the flow of described HCl gas is that 200～2000sccm, temperature are 250～450 ℃, and the lasting time of described step S2 is 10～500s, preferably 30～300s.
4. method for cleaning according to claim 1, is characterized in that, at described step S2, making to apply pulse duration in described hydrogen halide generation plasma process is the microwave that 5～25ms, power are 800～2000W.
5. method for cleaning according to claim 1, is characterized in that, described PECVD equipment is board-like PECVD equipment or tubular type PECVD equipment.
6. a manufacture method for antireflective coating, is characterized in that, described manufacture method comprises:
Adopt the cleaning of the method for cleaning described in any one silicon chip in claim 1 to 5;
At antireflective coating described in the surface deposition of described silicon chip.
7. manufacture method according to claim 6, is characterized in that, described antireflective coating is silicon nitride film, and the step of described depositing antireflection film adopts pecvd process to implement, and implements in same PECVD equipment with the step of described cleaning silicon chip.
8. manufacture method according to claim 7, is characterized in that, the step of described depositing antireflection film comprises to the front surface of described silicon chip and passes into flow-rate ratio 1.8:1～4:1 ammonia and silane.
9. manufacture method according to claim 8, is characterized in that, the flow of described ammonia is 500～2000sccm, preferred 900～1800sccm, and the duration is 1～5min, and depositing temperature is 300～550 ℃, and deposition pressure is 0.15～0.45mbar.
10. manufacture method according to claim 6, is characterized in that, the pulse duration of setting the microwave that described PECVD equipment sends is that 5～25ms, power are 500～2000W.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310588900.8A CN103606594B (en) | 2013-11-20 | 2013-11-20 | The method for cleaning of silicon chip and the preparation method of antireflective coating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310588900.8A CN103606594B (en) | 2013-11-20 | 2013-11-20 | The method for cleaning of silicon chip and the preparation method of antireflective coating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103606594A true CN103606594A (en) | 2014-02-26 |
| CN103606594B CN103606594B (en) | 2017-09-12 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107154449A (en) * | 2017-05-19 | 2017-09-12 | 常州亿晶光电科技有限公司 | It is a kind of to reduce the process of polycrystalline cell piece electric leakage |
| CN108987490A (en) * | 2018-07-18 | 2018-12-11 | 国家电投集团西安太阳能电力有限公司 | The clean processing method in surface layer after solar energy cell wet-method etching oxidation |
| CN115117201A (en) * | 2022-06-24 | 2022-09-27 | 英利能源发展有限公司 | Silicon wafer phosphorus or boron doping method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6410454B1 (en) * | 1997-06-10 | 2002-06-25 | Mitsubishi Denki Kabushiki | Method and apparatus for removing contaminants from the surface of a semiconductor wafer |
| US20030121527A1 (en) * | 2001-12-27 | 2003-07-03 | Seo Bo Min | Method for cleaning a semiconductor device |
| CN102856176A (en) * | 2012-09-27 | 2013-01-02 | 合肥海润光伏科技有限公司 | Tubular plasma enhanced chemical vapor deposition (PECVD) film coating method |
| CN102903626A (en) * | 2012-10-29 | 2013-01-30 | 镇江大全太阳能有限公司 | Silicon nitride coating method with silicon wafer surface cleaning function |
| CN103390682A (en) * | 2012-05-07 | 2013-11-13 | 吉富新能源科技(上海)有限公司 | Plasma clean heterojunction monocrystalline silicon thin-film solar cell |
-
2013
- 2013-11-20 CN CN201310588900.8A patent/CN103606594B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6410454B1 (en) * | 1997-06-10 | 2002-06-25 | Mitsubishi Denki Kabushiki | Method and apparatus for removing contaminants from the surface of a semiconductor wafer |
| US20030121527A1 (en) * | 2001-12-27 | 2003-07-03 | Seo Bo Min | Method for cleaning a semiconductor device |
| CN103390682A (en) * | 2012-05-07 | 2013-11-13 | 吉富新能源科技(上海)有限公司 | Plasma clean heterojunction monocrystalline silicon thin-film solar cell |
| CN102856176A (en) * | 2012-09-27 | 2013-01-02 | 合肥海润光伏科技有限公司 | Tubular plasma enhanced chemical vapor deposition (PECVD) film coating method |
| CN102903626A (en) * | 2012-10-29 | 2013-01-30 | 镇江大全太阳能有限公司 | Silicon nitride coating method with silicon wafer surface cleaning function |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107154449A (en) * | 2017-05-19 | 2017-09-12 | 常州亿晶光电科技有限公司 | It is a kind of to reduce the process of polycrystalline cell piece electric leakage |
| CN108987490A (en) * | 2018-07-18 | 2018-12-11 | 国家电投集团西安太阳能电力有限公司 | The clean processing method in surface layer after solar energy cell wet-method etching oxidation |
| CN108987490B (en) * | 2018-07-18 | 2020-04-14 | 国家电投集团西安太阳能电力有限公司 | Surface cleaning treatment method for solar cell after wet etching oxidation |
| CN115117201A (en) * | 2022-06-24 | 2022-09-27 | 英利能源发展有限公司 | Silicon wafer phosphorus or boron doping method |
| CN115117201B (en) * | 2022-06-24 | 2024-03-12 | 英利能源发展有限公司 | Silicon wafer phosphorus or boron doping method |
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