CN115732343A - 加工炉和加工方法 - Google Patents
加工炉和加工方法 Download PDFInfo
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- CN115732343A CN115732343A CN202211035580.9A CN202211035580A CN115732343A CN 115732343 A CN115732343 A CN 115732343A CN 202211035580 A CN202211035580 A CN 202211035580A CN 115732343 A CN115732343 A CN 115732343A
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Abstract
一种回流焊炉包括限定外壳的加工室。该外壳包括主轴,其被构造成支撑衬底并使衬底围绕加工室的中心轴线旋转。主轴还被构造成沿中心轴线竖直移动,并且将衬底定位在外壳内的不同位置。炉还包括:化学品输送管,其被构造成将化学蒸气引导到外壳;灯组件,其被构造成加热衬底的顶面;以及升降组件,其被构造成使主轴沿着中心轴线移动。
Description
技术领域
本发明涉及回流焊炉和使用加工炉的方法。
背景技术
电子工业正不断地以较低的成本将更多的功能设计到更小的电子器件中。这种向更小且更便宜的电子器件的驱动力已经推动了先进半导体封装技术的发展。例如,传统上用于将管芯附接到衬底的线接合已经被焊接凸点所取代。翻转芯片,也称为可控塌陷芯片连接(缩写为C4),是一种在晶片被切割成单个管芯之前利用沉积在晶片顶侧上的管芯的I/O(输入/输出)焊盘上的焊接凸点将半导体管芯(或IC芯片)连接到衬底的方法。在将晶片切割成单个管芯之后,管芯被翻转,使得其顶侧面向下并对准,使得其焊盘与衬底上的匹配焊盘对准。使焊料回流以完成互连。
传统上,通过使组件穿过批量回流炉来实现回流焊,在该批量回流炉中,组件在传送带上穿过炉的不同区域。这些区域加热和冷却晶片,并在大气压下将化学蒸气引入晶片。然而,在大气压下引入用于回流焊的化学蒸气对于小于约50μm(微米)的焊料几何形状不是最佳的。大气压力将提供与化学蒸气压力的竞争力,并阻碍蒸气到达焊接凸点的所有区域。结果,降低了焊接成品率。在回流期间观察到的典型的焊接失效机理包括空隙、非润湿接头、非接触开路、桥接和短路。随着半导体技术的进步,管芯上的焊接凸点变得很小,以至于批量热回流系统无法实现高焊接成品率。相反,管芯上的较小凸点需要更精确的热处理控制和化学蒸气输送,以实现高成品率的回流。本发明的回流焊炉可以缓解上述问题中的一者或多者。
发明内容
公开了回流焊炉(或加工炉)和使用该炉的方法的几个实施例。应当理解,前面的一般描述和下面的详细描述两者仅是示例性和说明性的。由此可见,本发明的范围不仅仅限于所公开的实施例。相反,本发明的范围旨在覆盖在所公开的实施例的精神和范围内的这样的替代、修改和等同物。本领域技术人员将理解如何在不背离本发明的精神和范围的情况下对所公开的实施例进行各种改变、替换和变更。
在一个方面,公开了一种回流焊炉。该炉可以包括限定外壳的加工室。该外壳可包括主轴,其被构造成支撑衬底并与衬底一起围绕加工室的中心轴线旋转。主轴还可被构造成沿中心轴线竖直移动,以将衬底定位在外壳内的不同位置。该炉还可以包括:灯组件,其被构造成加热支撑在主轴上的衬底的顶面;和升降组件,其被构造成使主轴沿着中心轴线移动。
炉的各种实施例可以替代性地或另外地包括以下特征中的一者或多者:加工室还可以包括透明窗,其限定外壳的顶壁,且灯组件可被构造成通过透明窗加热衬底的顶面;加工室还可以包括冷板,其限定外壳的底壁,并且冷板可包括一个或多个通道,其被构造成引导液体冷却剂从中穿过;加工室还可以包括盖,且灯组件可布置在盖的下侧上;主轴还可以包括一个或多个热电偶,其被构造成接触衬底的表面;加工室的侧壁还可以包括衬底入口,其被构造成将衬底引导至外壳中;外壳的底部区域还可以包括多个气体入口,其被构造成将惰性气体引导到外壳中,且外壳的顶部区域可包括化学品输送管,其被构造成将化学蒸气引导到外壳中;化学品输送管还可以包括多个气体喷嘴,其被构造成将化学蒸气导向衬底的顶面;化学品输送管可包括从外壳的一侧朝向中心轴线延伸的直管、包括一个或多个有角部的管、或T形管中的一者或多者;炉还可以包括控制系统,其被配置为基于衬底的温度使用反馈回路来控制灯组件的操作;且加工室还可以包括真空端口,其被构造成联接至真空泵。
在另一方面,公开了一种回流焊炉。该炉可以包括限定外壳的加工室。加工室可包括主轴,其定位在外壳中,被构造成在主轴上支撑衬底,并且与衬底一起围绕加工室的中心轴线旋转。主轴还可被构造成沿中心轴线竖直移动,以将衬底定位在外壳内的不同位置。加工室还可以包括形成外壳底壁的冷板。冷板可以包括一个或多个通道,其被构造成引导液体冷却剂从中穿过。多个气体入口可定位在外壳的底部区域,并且化学品输送管可定位在外壳的顶部区域。多个气体入口可被构造成将气体(例如,惰性气体,诸如氮气等)引导到外壳中,并且化学品输送管可被构造成将化学蒸气(例如,甲酸等)引导到外壳中。炉还可包括灯组件,其被构造成加热支撑在主轴上的衬底的顶面。灯组件可以包括多个间隔开的灯。灯组件的相邻灯的间隔在灯组件的侧面处比在灯组件的中心处更近。
炉的各种实施例可以替代性地或另外地包括以下特征中的一者或多者:化学品输送管还可包括多个气体喷嘴,其被构造成将化学蒸气导向衬底的顶面;加工室还可包括盖,且灯组件可布置在盖的下侧上;主轴还可以包括一个或多个热电偶,其被构造成接触衬底的表面;并且加工室的侧壁还可包括衬底入口,并且衬底入口可被构造成将衬底引导至外壳中。
在另外实施例中,公开了一种回流焊炉。该炉可以包括具有盖的加工室。加工室和盖可以限定外壳。衬底支撑结构可定位于外壳中。衬底支撑结构可被构造成支撑衬底并与衬底一起围绕加工室的中心轴线旋转。灯组件可以定位在盖的下侧上。灯组件可被构造成加热定位于外壳中的衬底的顶面。灯组件可以包括多个灯,这些灯彼此间隔开,使得灯组件的相邻灯的间隔在灯组件的侧面处比在灯组件的中心处小。化学品输送管也可以定位于外壳中。化学品输送管可包括多个气体喷嘴,其被构造成将化学蒸气导向定位于外壳中的衬底的顶面。
炉的各种实施例可以替代性地或另外地包括以下特征中的一者或多者:加工室还可包括冷板,其限定外壳的底壁,并且冷板可包括一个或多个通道,其被构造成引导液体冷却剂从中穿过;在灯组件80的侧面处的相邻灯之间的间隔可介于约10mm至60mm之间,且在灯组件的中心处的相邻灯之间的间隔可介于约40mm至80mm之间;化学品输送管的多个气体喷嘴可被构造成将甲酸蒸气导向定位于外壳中的衬底的顶面;并且加工室可以包括多个气体入口,其被构造成将惰性气体引导到定位于外壳中的衬底下方的外壳中。
在又一方面,公开了一种使用回流焊炉的方法。该方法可包括:将衬底支撑在加工室的外壳中的可旋转主轴上,以及在衬底支撑在主轴上的情况下旋转主轴。方法还可包括:将带有衬底的主轴升高至位于外壳的顶部区域处的外壳的加热区域,开启炉的灯组件以加热衬底的顶面,以及将带有衬底的主轴降低至位于加热区域下方的外壳的定量给料区域。灯组件可以包括多个隔开的灯。灯组件的相邻灯的间隔在灯组件的侧面处比在灯组件的中心处更近。方法还可包括:将化学蒸气引导到衬底的顶面上方的外壳中,并且在引导化学蒸气之后,将带有衬底的主轴升高到加热区域以进一步加热衬底的顶面。方法可另外包括:在进一步加热衬底的顶面之后,将带有衬底的主轴降低至位于定量给料区域下方的外壳的冷却区域以冷却衬底。
方法的各种实施例可以替代性地或另外地包括以下特征中的一者或多者:将化学蒸气引入外壳中还可包括:同时将氮气引入衬底下方的外壳中;并且衬底还可以包括在顶面上的焊料,并且加热衬底的顶面可以包括熔化焊料。
附图说明
被结合在本发明中并构成本发明的一部分的附图例示了示例性实施例,并与说明书一起用于解释所公开的原理。在这些附图中,在适当的情况下,在不同附图中例示相同结构、部件、材料和/或元件的附图标记被类似地标记。应当理解,除了具体示出的之外,结构、部件和/或元件的各种组合是预期的并且在本发明的范围内。
为了说明的简单和清楚,附图描述了各种所描述的实施例的总体结构。可以省略公知的部件或特征的细节,以避免使其它特征模糊,因为这些省略的特征对于本领域普通技术人员是已知的。进一步地,图中的元件不一定按比例绘制。一些特征的尺寸可以相对于其他特征放大,以增强对示例性实施例的理解。本领域技术人员将理解,附图中的特征不一定按比例绘制,并且除非另外指出,否则不应被视为表示附图中不同特征之间的比例关系。另外,即使没有具体提及,参考一个实施例或附图描述的方面也可以适用于其他实施例或附图,并且可以与其他实施例或附图一起使用。
图1A和图1B例示了本发明的示例性加工炉;
图2例示了被构造成在图1A的加工炉中加工的示例性衬底;
图3例示了可以用于加工图2的衬底的示例性温度曲线;
图4例示了图1A的加工炉的主轴;
图5A和图5B是图1A的加工炉的加工室的透视图;
图5C例示了图1A的加工炉的示例性灯组件;
图6A和图6B是图5A的加工室的部分的侧视图;
图7A至图7C是图5A的加工室在不同示例性实施例中的顶视图;以及
图8是示出了使用图1A的加工炉的示例性方法的流程图。
具体实施方式
所有相对术语,例如“大约”、“大致”、“近似”等,指示±10%的可能变化(除非另外说明或指定其他变化)。例如,公开为大约“t”个单位长(宽、厚等)的特征可以在长度上从(t-0.1t)到(t+0.1t)个单位变化。类似地,在大约100℃-150℃范围内的温度可以是(100-10%)至(150+10%)之间的任何温度。在一些情况下,本说明书还提供了所使用的一些相对术语的上下文。例如,被描述为大致圆形或大致圆柱形的结构可以与完美的圆形或圆柱形稍微偏离(例如,直径在不同位置处变化10%等)。进一步地,描述为从5到10(5-10)或在其之间变化的范围包括端点(即,5和10)。
除非另有定义,否则本文所用的所有技术术语、符号和其它科学术语或措辞具有与本发明所属领域的普通技术人员通常理解的相同含义。本文描述或引用的一些部件、结构和/或工艺是本领域技术人员使用传统方法充分理解和普遍采用的。因此,将不详细描述这些部件、结构和工艺。本文引用为以引用的方式并入的所有专利、申请、公开的申请和其它公报以引用的方式全文并入。如果本发明中阐述的定义或描述与这些参考文献中的定义和/或描述相反或以其他方式不一致,则本发明中阐述的定义和/或描述控制以引用的方式并入的参考文献中的定义和/或描述。本文所描述或引用的参考文献都不被承认为本发明的现有技术。
图1A是本发明的示例性回流焊炉或加工炉(炉100)的侧视图,图1B是其透视图。在以下讨论中,将根据加工炉作为回流焊炉的优选用途来描述加工炉100。然而,这种用途仅是示例性和说明性的,而不是必要条件。本发明的炉可以用于任何目的。炉100包括加工室40,其被构造成接收衬底(例如,晶片、有机/陶瓷衬底、半导体封装、印刷电路板(PCB)等),并且适于使衬底经受高温处理。在以下讨论中,在顶面上具有焊料的半导体晶片(参见图2)将被描述为在炉100中经受示例性回流焊工艺的衬底。通常,室40中可以接收任何尺寸(例如200mm、300mm等)的半导体晶片。图2例示了可以接收在室40中并经受回流工艺的示例性半导体晶片10。如本领域技术人员将认识到的,在集成电路加工之后,晶片10包含多个管芯(或IC芯片),且焊料可沉积在晶片10中的多个管芯的I/O焊盘上。在将晶片10切割成单个管芯之前,晶片10可以在炉100中进行回流工艺以在其上形成焊接凸点12(称为晶片凸块)。任何类型的焊料(无铅焊料、铅锡焊料等)可以沉积在晶片10上,并且晶片10可以经受任何类型的回流工艺或回流曲线。本领域的普通技术人员将认识到,晶片10经受的回流工艺取决于沉积在晶片10上的焊料的类型。用于不同类型的焊料的合适回流曲线可在已公开的文献中获得,并且可从焊料供应商获得。图3例示了可以应用于室40中的晶片10的示例性回流曲线。在图3中,X轴示出以秒为单位的时间,Y轴示出以摄氏度(℃)为单位的温度。
机械臂或机械手臂(未示出)可以通过入口42将晶片10插入到室40中。晶片10可以布置在室40内的可旋转主轴44上。图4例示了定位在室40中的示例性主轴44(参见图5B)。主轴44可包括从中心轴线50径向向外延伸的多个臂46A、46B、46C(例如,3个臂)。主轴44的各个臂46A、46B、46C包括向上突出的凸块48A、48B、48C。晶片10可以搁置在主轴44的凸块48A、48B、48C上。炉100还包括电机组件20,其被构造成支撑和控制室40中的晶片10的移动。电机组件20可包括一个或多个电机,其被构造成使主轴44(和支撑在其上的晶片10)在室40中围绕其中心轴线50旋转。主轴44可以以任何速度旋转。在一些实施例中,主轴44的旋转速度可以在大约0至20RPM之间变化。电机组件20还可以包括在室40内的多个竖直隔开的区域或区之间沿着轴线50使旋转晶片升高和降低的电机。炉100还可以包括具有多个灯82(参见图5B、图5C)的灯组件80,其被构造成加热室40中的晶片10的顶面。
图5A和图5B例示了炉100的示例性加工室40。如这些图例示,在一些实施例中,室40可具有大致圆柱形的构造。然而,大致圆柱形形状不是必要条件。通常,加工室40可以具有任何形状。在一些实施例中,室40可以是大致正方形的、大致矩形的或具有另一形状。炉100可以给出附接到底座60的铰接盖70。底座60和盖70限定了封闭的空间或外壳66(参见图5B),其被构造成接收晶片10。室40和外壳66的尺寸取决于应用,例如,将在室40中加工的晶片的尺寸。在一些实施例中,在被构造成加工300mm晶片的炉100和室40中,外壳66可以具有大约450mm的直径和大约150mm的高度。晶片10插入到室40的外壳66中所通过的入口42可以限定在底座60上。在一些实施例中,阀或挡板可密封入口42到外壳66中的开口,使得外壳66可被向下泵送到低压。底座60可包括一个或多个气体端口62。在一些实施例中,处理气体可以通过气体端口62被引导到外壳66中。在一些实施例中,真空泵可以联接到气体端口62以在外壳66中产生真空。
在一些实施例中,如图5B例示,灯组件80的灯82可布置在盖70的下侧,使得当灯72被开启时,灯72加热定位于外壳66中的晶片10的顶面。图5C例示了了盖70上的示例性灯组件80。通常,灯组件80可以包括任何数量和任何类型的灯82。在一些实施例中,灯组件80可包括4-10个红外(IR)灯82,各个灯的功率在大约1kW-10kW之间,或各个灯82的功率在大约1.5kW-3kW之间(或大约2kW)。在一些实施例中,如图5C例示,灯组件80可包括七个卤素灯82。灯82可以被布置(例如,隔开)为使得它们均匀地加热室40中的晶片10的顶面。在一些实施例中,如图5C例示,灯82可以在(灯组件80的)边缘处比在中心处更靠近地布置在一起。由于边缘效应,室40中的晶片10在边缘处比在中心处冷却得更快。灯82在边缘处比在中心处小的相对间隔可有助于在晶片10上实现均匀的温度曲线。
灯组件80的灯82之间的间隔可取决于应用(例如,晶片和炉100的尺寸)。参考图5C,在一些实施例中(例如,在构造成加工300mm晶片的炉100中),灯82之间的间隔可以使得a1在大约10mm-30mm之间(例如,大约20mm),a2可以在大约40mm-60mm之间(例如,大约50mm),a3可以在大约60mm-80mm之间(例如,大约75mm),a4可以在大约40mm-60mm之间(例如,大约50mm),a5可以在大约40mm-60mm之间(例如,大约50mm),并且a6可以在大约40mm-50mm之间(例如,大约45mm)。应当注意,上述间隔值仅是示例性的。通常,在灯组件80的侧面的相邻灯82之间的间隔可以小于在灯组件80的中心的相邻灯的间隔。在一些实施例中,在灯组件80的侧面处的相邻灯82之间的间隔(例如,a1或a2或a5或a6)可在大约10mm-60mm之间,而在灯组件80的中心处的相邻灯82之间的间隔(例如,a3或a4)可大于在侧面处的间隔且在大约40mm-80mm之间。
在一些实施例中,灯82可以由炉100的控制系统200(在图1A中示意性地例示)控制,以便以选定的温度斜率加热晶片10。例如,可以开启不同数量的灯82来增大或减小斜率。替代性地或另外地,在一些实施例中,可以改变灯82的功率以改变外壳66中的温度斜率。在一些实施例中,控制系统200可基于室40中的检测温度(例如,使用反馈回路)来控制到灯82的功率。例如,当室40中的热电偶(或高温计或另一温度检测传感器)指示晶片的温度低于期望值时,控制系统200可增加灯82的功率。在一些实施例中,当热电偶指示晶片中的温度变化高于阈值(例如,晶片边缘处的温度低于中心处的温度等)时,控制系统200可改变到灯组件80中的不同灯82的功率。尽管在图5B中不可见,但在一些实施例中,由对从灯82发出的光的波长透明的材料制成的窗口可设置在底座60与盖70之间,以将外壳66的顶部与外部环境密封隔离。在这样的实施例中,灯82通过透明窗加热外壳66中的晶片10。在一些实施例中,窗口可以由例如石英、玻璃等制成。
图6A例示了室40的侧视图。室40的外壳66可以限定多个竖直隔开的虚拟区域。这些区域可以包括在外壳66的基部的冷却区域90A、在冷却区域90A正上方的转移区域90B、在转移区域90B正上方的定量给料区域90C、以及在定量给料区域90C正上方和外壳66顶部的快速斜坡区域90D。在晶片10的回流加工期间,外壳66的这些虚拟区域90A-90D适于不同的功能。在加工期间,主轴44被构造成在外壳66的一个或多个区域90A-90D之间移动(即,升高和降低)被定位在凸块48A-48D(参见图4)上的晶片10。图6B是外壳66的冷却区域90A的侧视图。冷板94形成外壳66的基部。当在冷却区域64A中时,晶片10物理地位于冷板94上(或定位于其附近)以通过传导冷却。冷板94包括冷却剂通道94,其被构造成引导冷却剂(水或其它液体冷却剂)从中穿过以去除从晶片10传导的热量。冷板94还包括多个开口95(参见图7A),其可被构造成将惰性气体(例如,氮气)引导到外壳66中。在一些实施例中,氮气可经由开口95引导到外壳66中,以通过强制对流冷却晶片10的下侧。多个气体入口96定位在冷却区域90A中,以将惰性气体(例如,氮气)引导到外壳66中。当晶片定位于冷却区域90A中(例如,位于冷板94上)时,惰性气体(例如,氮气或其它合适的惰性气体)可以被引导到外壳66中,以在晶片10上方流动并通过对流冷却晶片10的顶面。在一些实施例中,气体端口96可以布置在(室40的)底座60的侧壁上,并且定位成使得来自这些端口的惰性气体在位于冷板94上的晶片10的顶面上流动。在一些实施方式中,通过组合对流和传导传热,可以以大于或等于(≥)大约60℃/分钟的速率冷却晶片10。尽管不是必需的,但在一些实施例中,从外壳66的基部(即,冷板94的顶面)到距基部大约60mm的高度的区域形成外壳66的冷却区域90A。即,在一些实施例中,冷却区域90A可为从外壳66的基部跨越0-60mm的外壳的区域。
转移区域90B是在冷却区域90A上方的与室40的端口42(参见图1B和图5B)对准的区域。如前所述,晶片10经由端口42插入到外壳66中。当晶片10插入到外壳66中时,它在转移区域90B进入外壳66。当插入晶片10时,主轴44定位于转移区域90B中,使得晶片10搁置在凸块48A、48B、48C上。尽管不是必需的,但在一些实施例中,转移区域90B可以是从外壳66的基部跨越大约60mm-90mm的外壳区域。定量给料区域90C是转移区域90B上方的外壳66的区域。当晶片10定位于定量给料区域90C时,化学蒸气(例如,甲酸蒸气)经由定位为接近外壳66顶部的化学品输送管98引导到外壳66中。化学蒸气通过化学品输送管98上的喷嘴注入到外壳66中,同时主轴44旋转。化学蒸气覆盖晶片10并大致均匀地处理晶片10的所有区域。在一些实施例中,边缘环将化学蒸气引导到晶片的顶部。尽管不是必需的,但在一些实施例中,定量给料区域90C是从外壳66的基部跨越大约90mm-120mm的外壳区域。
快速斜坡区域90D是在定量给料区域90C上方的外壳66的区域。当主轴44将晶片10升高到快速斜坡区域90D时,盖70下侧的灯82加热晶片10。在一些实施例中,灯82可以以≥大约120℃/分钟的速率加热晶片10。主轴44的旋转确保晶片10的所有区域被大致均匀地加热。一个或多个热电偶和/或高温计可以在加热期间测量晶片10的温度。在一些实施例中,控制系统200可以使用反馈回路(例如PID控制)控制灯82的功率以控制晶片温度。在一些实施例中,一个或多个热电偶可以设置在主轴44中,以测量加热期间晶片10的温度。在一些这样的实施例中,弹簧可以保持一个或多个热电偶与晶片10接触。在一些实施例中,聚焦在晶片10上的一个或多个高温计可布置在外壳66的顶部或底部,以测量加热期间晶片10的温度。
如前所述,当晶片10定位于定量给料区域90C时,化学蒸气(例如,甲酸蒸气)经由定位在外壳66顶部的化学品输送管98注入到外壳66中。化学品输送管98可具有一形状,其被构造成在晶片10上大致均匀地排放化学蒸气。图7A至图7C例示了可以用在炉100的不同实施例中的化学品输送管98A-98C的不同构造。在一些实施例中,如图7A例示,化学品输送管98A可以是从室40的一侧延伸到晶片10中心的直管。多个喷嘴99或端口可以定位于管98A的下侧,面向晶片10。在管98A上可以设置任何数量(2个-20个)的喷嘴99。在旋转晶片10的不同径向位置处将气体分散到外壳66中有助于大致均匀地处理晶片10的所有区域中的焊接凸点。在一些实施例中,如图7B例示,可使用成角度或弯曲的化学品输送管98B。在一些实施例中,如图7C例示,可使用T型化学品输送管98C。尽管在图7B和图7C中未示出,但在管98B、98C的下侧可以设置隔开的喷嘴99,其面向晶片10,以均匀地处理旋转晶片10的所有区域。基于被加工的晶片10的类型、尺寸和/或形状,可以使用不同构造的化学品输送管98A、98B、98C。
在一些实施例中,当化学蒸气经由晶片10顶部的化学品输送管98引导到外壳66中时,惰性气体(例如氮气)可以引导到晶片10底部的外壳66中。惰性气体可以通过冷板94上的开口95和/或通过气体端口96引导到外壳中。当化学蒸气在晶片10上方引导化学蒸气时,同时在晶片10下方引导惰性气体允许化学蒸气大致均匀地覆盖和处理衬底顶面上的所有区域。
现在将描述使用图3的示例性回流曲线在炉100中加工晶片10的示例性方法200。如图3例示,图3的回流曲线优选地由六个时间-温度处理区域(区域1至区域6)限定。首先通过端口42将晶片10装载到室40的外壳66中(步骤210)。可以例如使用机械臂经由端口42将晶片10插入到外壳66中,并将其布置在被定位于转移区域90B中的主轴44上。主轴44可以旋转晶片(步骤220)并将晶片10升高到外壳66的快速斜坡区域90D(步骤230)。在一些实施例中,也可将外壳66中的压力抽空到低于大气压的压力。在一些实施例中,可将外壳66抽吸到大约100毫托-100托之间的压力。在一些实施例中,外壳可以被抽吸到大约1-10托之间的压力。控制系统200开启灯组件80的灯82以加热晶片10并升高其温度(步骤240)。在一些实施例中,可以在步骤210中将晶片10装载到主轴44上之前开启灯82。当在快速斜坡区域90D(即步骤230)中时,晶片10的温度可以如图3的区域1例示的升高。
当外壳66的热电偶和/或高温计指示晶片10的温度已经达到处理区域1的目标温度(图3中大约150℃)时,控制系统200可以将带有晶片10的主轴44降低到定量给料区域90℃(步骤250)。当在定量给料区域90C中时,可以通过晶片10上方的化学品输送管98将化学蒸气(例如甲酸蒸气)引导到外壳66中,同时通过晶片10下方的气体入口96(和/或冷板94上的开口95)将惰性气体(例如氮气)引导到外壳66中(步骤260)。晶片10下方的惰性气体流有助于保持晶片10上方的化学蒸气,使得旋转晶片10的大致所有区域均匀地暴露并涂布有蒸气。在该步骤期间,晶片10的温度可以遵循图3的区域2所例示的路径。在步骤260中用化学蒸气涂布晶片10之后,可以使用真空泵抽空外壳66以去除外壳66中的过量蒸气(步骤270)。替代性地或另外地,在一些实施例中,在该步骤期间,可以将惰性气体(例如,氮气)引导到外壳66中,以排出未沉积在晶片上的残留化学蒸气。主轴44然后可以将晶片10升高回到快速斜坡区域90D,以继续以快速加热晶片10(步骤280)。在该步骤期间,晶片10的温度可以遵循图3的区域3至区域5所例示的曲线并且焊料回流。
在完成回流焊之后,控制系统200关闭灯82(或降低到安全空闲功率),且将晶片10降低到冷却区域90A,以冷却衬底(步骤290)。在冷却区域90A中,在一些实施例中,晶片10可以物理地搁置在冷板94上,使得晶片10的底面通过液体冷却的冷板94传导冷却,并且经由来自气体入口96的在晶片10的顶部上流动的惰性气体(例如,氮气)从顶部对流冷却。在一些实施例中,也可以将惰性气体(例如,氮气)引导通过冷板94中的开口95,以帮助冷却晶片10的背面。当在冷却区域90A中时,晶片10的温度可以遵循图3的区域6所例示的曲线。在冷却完成之后,主轴44可以将晶片10升高到转移区域90B,并且可以通过端口42从外壳中取出晶片10(步骤300)。
回流炉100和操作该炉的方法200的上述实施例仅是示例性的。许多变型是可能的。可以使用炉100使用适合于所使用的焊料的时间-温度曲线(或回流曲线)来执行任何回流工艺。2020年4月17日提交的标题为“Batch Processing Oven and Method”的美国专利申请第16/851,977号描述了一些示例性的回流工艺,该回流工艺也可在炉100中执行。该16/851,977号申请的公开内容以引用的方式全文并入本文,如同在本文中完全阐述一样。如本领域技术人员将认识到的,方法200的步骤不需要按照图8所例示的顺序来执行。在其它示例性方法中可以省略一些步骤和/或添加一些步骤。例如,在一些实施例中,可以在将晶片装载到室中(即,步骤210)之前或在旋转主轴(步骤220)之前等,开启灯82(步骤240)。作为另一个示例,在一些实施例中,可以将室40的外壳66抽到低于大气压的压力(例如,在大约1-10托之间),从而将晶片装载到室中(步骤210),等等。本领域普通技术人员将认识和理解这些可能的变型在本发明的范围内。
此外,尽管结合回流焊工艺公开了炉100,但这仅是示例性的。本领域普通技术人员将认识到,炉可以用于任何工艺。进一步地,描述了晶片凸块工艺。通常,可以在炉100中在任何类型的衬底(例如,晶片、有机/陶瓷衬底、半导体封装、印刷电路板(PCB)等)上执行任何高温处理。例如,在一些实施例中,炉100可以用于使用焊接(例如,回流焊接)将管芯(或IC芯片)附接在衬底或芯片载体(PCB、陶瓷/有机衬底等)上。在回流焊接期间,焊球或焊膏(粉末状焊料和焊剂的粘性混合物)可用于临时将一个或多个电子元件附接在一起(例如,使用C4接头将管芯附接到衬底,使用球栅阵列(BGA)接头将管芯-衬底组件附接到封装衬底(例如PCB),等等)。然后,可以对部件组件进行回流工艺,以熔化焊料并将部件附接在一起。考虑到本文的公开内容,炉和相关方法的其它实施例对于本领域技术人员将是清楚的。还应注意,在一些实施例中,可将炉100的所述区域中的一者或多者(例如,冷却区域90A、位于冷却区域90A正上方的转移区域90B、定量给料区域90C、快速斜坡区域90D等)的功能组合,从而减少区域的数量。
Claims (11)
1.一种加工炉,包括:
加工室,其限定外壳,所述加工室包括:
主轴,其定位在所述外壳中并且被构造成:(a)在其上支撑衬底,(b)与所述衬底一起围绕所述加工室的中心轴线旋转,以及(c)沿着所述中心轴线竖直地移动以将所述衬底定位在所述外壳内的不同位置处;
冷板,其形成所述外壳的底壁,所述冷板包括一个或多个通道,所述一个或多个通道被构造成引导液体冷却剂从中穿过;
多个气体入口,其定位在所述外壳的底部区域处,所述多个气体入口被构造成将氮气引导到所述外壳中;和
化学品输送管,其定位在所述外壳的顶部区域处,所述化学品输送管被构造成将化学蒸气引导到所述外壳中;和
灯组件,其被构造成对支撑在所述主轴上的所述衬底的顶面加热,其中,所述灯组件包括多个间隔开的灯,并且其中,所述灯组件的相邻灯的间隔在所述灯组件的侧面处比在所述灯组件的中心处更近;
其中,所述灯组件的相邻灯的间隔在所述灯组件的侧面处比在所述灯组件的中心处更小。
2.根据权利要求1所述的炉,其中,所述化学品输送管还包括多个气体喷嘴,所述多个气体喷嘴被构造成将所述化学蒸气导向所述衬底的所述顶面。
3.根据权利要求1所述的炉,其中,所述加工室还包括盖,并且所述灯组件布置在所述盖的下侧上。
4.根据权利要求1所述的炉,其中,所述主轴还包括一个或多个热电偶,所述一个或多个热电偶被构造成接触所述衬底的表面。
5.根据权利要求1所述的炉,其中,所述加工室的侧壁还包括衬底入口,所述衬底入口被构造成将所述衬底引导到所述外壳中。
6.一种使用加工炉的方法,包括:
将衬底支撑在所述加工炉的外壳中的可旋转主轴上;
旋转所述衬底;
将所述加工炉中压力的值降低至100毫托至100托之间;
将所述衬底升高到所述外壳的位于所述外壳的顶部区域处的加热区域;
开启所述炉的灯组件以加热所述衬底的顶面,其中,所述灯组件包括多个间隔开的灯;
将所述衬底降低到所述外壳的定量给料区域;
将化学蒸气引导到所述衬底的所述顶面上方的外壳中并且将惰性气体引导到所述衬底下方的外壳中;
在引导所述化学蒸气之后,将所述衬底升高到所述加热区域以进一步利用所述灯组件加热所述衬底的所述顶面;以及
在进一步加热所述衬底的所述顶面之后,将所述衬底降低至所述外壳的冷却区域。
7.根据权利要求6所述的方法,其中,所述衬底还包括在所述顶面上的焊料,并且进一步加热所述衬底的所述顶面包括将所述顶面加热到所述焊料的熔化温度以上。
8.根据权利要求6所述的方法,其中,还包括:在将所述衬底降低至所述冷却区域之后,将惰性气体引导到所述衬底上方的所述加工室中,以冷却所述衬底的所述顶面。
9.根据权利要求6所述的方法,其中,在将所述衬底降低至所述冷却区域之后,将惰性气体引导到所述衬底下方的所述加工室中,以冷却所述衬底的背侧。
10.根据权利要求6所述的方法,其中,将所述衬底降低至所述冷却区域包括:将所述衬底的背侧定位在所述加工室的冷板附近,并且通过所述冷板上的多个开口将惰性气体引导到所述加工室中,以冷却所述衬底的所述背侧。
11.根据权利要求6所述的方法,其中,将所述衬底降低至所述冷却区域包括:使所述衬底的背侧与所述加工室的冷板接触并且引导冷却剂通过所述冷板。
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EP4074447A3 (en) | 2023-02-15 |
TW202332525A (zh) | 2023-08-16 |
EP4074447B1 (en) | 2024-03-20 |
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TWI813301B (zh) | 2023-08-21 |
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