CN115725369B - Application of cleaning fluid composition - Google Patents
Application of cleaning fluid composition Download PDFInfo
- Publication number
- CN115725369B CN115725369B CN202211369078.1A CN202211369078A CN115725369B CN 115725369 B CN115725369 B CN 115725369B CN 202211369078 A CN202211369078 A CN 202211369078A CN 115725369 B CN115725369 B CN 115725369B
- Authority
- CN
- China
- Prior art keywords
- water
- soluble polymer
- deionized water
- diaminomaleonitrile
- polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000203 mixture Substances 0.000 title claims abstract description 106
- 238000004140 cleaning Methods 0.000 title claims abstract description 102
- 239000012530 fluid Substances 0.000 title claims abstract description 34
- 229920003169 water-soluble polymer Polymers 0.000 claims abstract description 122
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 93
- 229920000642 polymer Polymers 0.000 claims abstract description 57
- 108010053070 Glutathione Disulfide Proteins 0.000 claims abstract description 48
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 claims abstract description 48
- 235000018417 cysteine Nutrition 0.000 claims abstract description 48
- YPZRWBKMTBYPTK-BJDJZHNGSA-N glutathione disulfide Chemical compound OC(=O)[C@@H](N)CCC(=O)N[C@H](C(=O)NCC(O)=O)CSSC[C@@H](C(=O)NCC(O)=O)NC(=O)CC[C@H](N)C(O)=O YPZRWBKMTBYPTK-BJDJZHNGSA-N 0.000 claims abstract description 48
- YPZRWBKMTBYPTK-UHFFFAOYSA-N oxidized gamma-L-glutamyl-L-cysteinylglycine Natural products OC(=O)C(N)CCC(=O)NC(C(=O)NCC(O)=O)CSSCC(C(=O)NCC(O)=O)NC(=O)CCC(N)C(O)=O YPZRWBKMTBYPTK-UHFFFAOYSA-N 0.000 claims abstract description 48
- -1 ammonium carboxylate Chemical class 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 27
- 239000007800 oxidant agent Substances 0.000 claims abstract description 24
- 230000007797 corrosion Effects 0.000 claims abstract description 23
- 238000005260 corrosion Methods 0.000 claims abstract description 23
- 239000002738 chelating agent Substances 0.000 claims abstract description 21
- 239000003112 inhibitor Substances 0.000 claims abstract description 19
- 150000007530 organic bases Chemical class 0.000 claims abstract description 17
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000004377 microelectronic Methods 0.000 claims abstract description 9
- 238000001020 plasma etching Methods 0.000 claims abstract description 8
- 239000000956 alloy Substances 0.000 claims abstract description 6
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical group [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 86
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 80
- 239000008367 deionised water Substances 0.000 claims description 74
- 229910021641 deionized water Inorganic materials 0.000 claims description 74
- DPZSNGJNFHWQDC-ARJAWSKDSA-N (z)-2,3-diaminobut-2-enedinitrile Chemical compound N#CC(/N)=C(/N)C#N DPZSNGJNFHWQDC-ARJAWSKDSA-N 0.000 claims description 54
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical group OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 43
- VBIXEXWLHSRNKB-UHFFFAOYSA-N ammonium oxalate Chemical group [NH4+].[NH4+].[O-]C(=O)C([O-])=O VBIXEXWLHSRNKB-UHFFFAOYSA-N 0.000 claims description 42
- 239000007788 liquid Substances 0.000 claims description 41
- 238000006243 chemical reaction Methods 0.000 claims description 26
- 229910052757 nitrogen Inorganic materials 0.000 claims description 23
- 238000002360 preparation method Methods 0.000 claims description 21
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 18
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000000243 solution Substances 0.000 claims description 14
- 230000001590 oxidative effect Effects 0.000 claims description 9
- FCKYPQBAHLOOJQ-UHFFFAOYSA-N Cyclohexane-1,2-diaminetetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)C1CCCCC1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UHFFFAOYSA-N 0.000 claims description 8
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 claims description 8
- 229960001231 choline Drugs 0.000 claims description 8
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 claims description 8
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 claims description 8
- LDZYRENCLPUXAX-UHFFFAOYSA-N 2-methyl-1h-benzimidazole Chemical compound C1=CC=C2NC(C)=NC2=C1 LDZYRENCLPUXAX-UHFFFAOYSA-N 0.000 claims description 7
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 229940078916 carbamide peroxide Drugs 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000000178 monomer Substances 0.000 claims description 5
- 238000006116 polymerization reaction Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 claims description 4
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims description 4
- 230000001502 supplementing effect Effects 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000003054 catalyst Substances 0.000 claims description 2
- 230000002209 hydrophobic effect Effects 0.000 claims description 2
- 239000003999 initiator Substances 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001393 triammonium citrate Substances 0.000 claims description 2
- 235000011046 triammonium citrate Nutrition 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 10
- 239000003989 dielectric material Substances 0.000 abstract description 7
- 238000004380 ashing Methods 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 150000002739 metals Chemical class 0.000 abstract description 4
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 abstract description 3
- 230000005764 inhibitory process Effects 0.000 abstract description 3
- 239000012459 cleaning agent Substances 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 30
- GDDNTTHUKVNJRA-UHFFFAOYSA-N 3-bromo-3,3-difluoroprop-1-ene Chemical compound FC(F)(Br)C=C GDDNTTHUKVNJRA-UHFFFAOYSA-N 0.000 description 9
- 239000010936 titanium Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- LFTLOKWAGJYHHR-UHFFFAOYSA-N N-methylmorpholine N-oxide Chemical compound CN1(=O)CCOCC1 LFTLOKWAGJYHHR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 3
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 3
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 description 2
- KDSNLYIMUZNERS-UHFFFAOYSA-N 2-methylpropanamine Chemical compound CC(C)CN KDSNLYIMUZNERS-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- 229910020366 ClO 4 Inorganic materials 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- PZZHMLOHNYWKIK-UHFFFAOYSA-N eddha Chemical compound C=1C=CC=C(O)C=1C(C(=O)O)NCCNC(C(O)=O)C1=CC=CC=C1O PZZHMLOHNYWKIK-UHFFFAOYSA-N 0.000 description 2
- 229950007919 egtazic acid Drugs 0.000 description 2
- DEFVIWRASFVYLL-UHFFFAOYSA-N ethylene glycol bis(2-aminoethyl)tetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)CCOCCOCCN(CC(O)=O)CC(O)=O DEFVIWRASFVYLL-UHFFFAOYSA-N 0.000 description 2
- 238000005470 impregnation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- DFQPZDGUFQJANM-UHFFFAOYSA-M tetrabutylphosphanium;hydroxide Chemical compound [OH-].CCCC[P+](CCCC)(CCCC)CCCC DFQPZDGUFQJANM-UHFFFAOYSA-M 0.000 description 2
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 2
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- KYVBNYUBXIEUFW-UHFFFAOYSA-N 1,1,3,3-tetramethylguanidine Chemical compound CN(C)C(=N)N(C)C KYVBNYUBXIEUFW-UHFFFAOYSA-N 0.000 description 1
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 1
- FYIHPNCKLYPALH-UHFFFAOYSA-N 2-[2-(2-aminophenoxy)ethenoxy]aniline Chemical compound NC1=CC=CC=C1OC=COC1=CC=CC=C1N FYIHPNCKLYPALH-UHFFFAOYSA-N 0.000 description 1
- RAEOEMDZDMCHJA-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-[2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]ethyl]amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CCN(CC(O)=O)CC(O)=O)CC(O)=O RAEOEMDZDMCHJA-UHFFFAOYSA-N 0.000 description 1
- KWIPUXXIFQQMKN-UHFFFAOYSA-N 2-azaniumyl-3-(4-cyanophenyl)propanoate Chemical compound OC(=O)C(N)CC1=CC=C(C#N)C=C1 KWIPUXXIFQQMKN-UHFFFAOYSA-N 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- BDDLHHRCDSJVKV-UHFFFAOYSA-N 7028-40-2 Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O BDDLHHRCDSJVKV-UHFFFAOYSA-N 0.000 description 1
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 description 1
- 239000005695 Ammonium acetate Substances 0.000 description 1
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 1
- 239000004251 Ammonium lactate Substances 0.000 description 1
- 239000004475 Arginine Substances 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- 108010024636 Glutathione Proteins 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- WDLRUFUQRNWCPK-UHFFFAOYSA-N Tetraxetan Chemical compound OC(=O)CN1CCN(CC(O)=O)CCN(CC(O)=O)CCN(CC(O)=O)CC1 WDLRUFUQRNWCPK-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- RUSUZAGBORAKPY-UHFFFAOYSA-N acetic acid;n'-[2-(2-aminoethylamino)ethyl]ethane-1,2-diamine Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.NCCNCCNCCN RUSUZAGBORAKPY-UHFFFAOYSA-N 0.000 description 1
- 229940043376 ammonium acetate Drugs 0.000 description 1
- 235000019257 ammonium acetate Nutrition 0.000 description 1
- 229940090948 ammonium benzoate Drugs 0.000 description 1
- BVCZEBOGSOYJJT-UHFFFAOYSA-N ammonium carbamate Chemical compound [NH4+].NC([O-])=O BVCZEBOGSOYJJT-UHFFFAOYSA-N 0.000 description 1
- 239000001099 ammonium carbonate Substances 0.000 description 1
- 235000012501 ammonium carbonate Nutrition 0.000 description 1
- KHPLPBHMTCTCHA-UHFFFAOYSA-N ammonium chlorate Chemical compound N.OCl(=O)=O KHPLPBHMTCTCHA-UHFFFAOYSA-N 0.000 description 1
- VZTDIZULWFCMLS-UHFFFAOYSA-N ammonium formate Chemical compound [NH4+].[O-]C=O VZTDIZULWFCMLS-UHFFFAOYSA-N 0.000 description 1
- 229940059265 ammonium lactate Drugs 0.000 description 1
- 235000019286 ammonium lactate Nutrition 0.000 description 1
- 239000012935 ammoniumperoxodisulfate Substances 0.000 description 1
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 description 1
- 125000000637 arginyl group Chemical group N[C@@H](CCCNC(N)=N)C(=O)* 0.000 description 1
- NHJPVZLSLOHJDM-UHFFFAOYSA-N azane;butanedioic acid Chemical compound [NH4+].[NH4+].[O-]C(=O)CCC([O-])=O NHJPVZLSLOHJDM-UHFFFAOYSA-N 0.000 description 1
- ZRDJERPXCFOFCP-UHFFFAOYSA-N azane;iodic acid Chemical compound [NH4+].[O-]I(=O)=O ZRDJERPXCFOFCP-UHFFFAOYSA-N 0.000 description 1
- RZOBLYBZQXQGFY-HSHFZTNMSA-N azanium;(2r)-2-hydroxypropanoate Chemical compound [NH4+].C[C@@H](O)C([O-])=O RZOBLYBZQXQGFY-HSHFZTNMSA-N 0.000 description 1
- NGPGDYLVALNKEG-UHFFFAOYSA-N azanium;azane;2,3,4-trihydroxy-4-oxobutanoate Chemical compound [NH4+].[NH4+].[O-]C(=O)C(O)C(O)C([O-])=O NGPGDYLVALNKEG-UHFFFAOYSA-N 0.000 description 1
- YUUVAZCKXDQEIS-UHFFFAOYSA-N azanium;chlorite Chemical compound [NH4+].[O-]Cl=O YUUVAZCKXDQEIS-UHFFFAOYSA-N 0.000 description 1
- URGYLQKORWLZAQ-UHFFFAOYSA-N azanium;periodate Chemical compound [NH4+].[O-]I(=O)(=O)=O URGYLQKORWLZAQ-UHFFFAOYSA-N 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-N carbonic acid monoamide Natural products NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000011538 cleaning material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- IDGUHHHQCWSQLU-UHFFFAOYSA-N ethanol;hydrate Chemical compound O.CCO IDGUHHHQCWSQLU-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004108 freeze drying Methods 0.000 description 1
- RWSXRVCMGQZWBV-WDSKDSINSA-N glutathione Chemical group OC(=O)[C@@H](N)CCC(=O)N[C@@H](CS)C(=O)NCC(O)=O RWSXRVCMGQZWBV-WDSKDSINSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 description 1
- 125000000487 histidyl group Chemical group [H]N([H])C(C(=O)O*)C([H])([H])C1=C([H])N([H])C([H])=N1 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 229940102253 isopropanolamine Drugs 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- AENSXLNDMRQIEX-UHFFFAOYSA-L oxido sulfate;tetrabutylazanium Chemical compound [O-]OS([O-])(=O)=O.CCCC[N+](CCCC)(CCCC)CCCC.CCCC[N+](CCCC)(CCCC)CCCC AENSXLNDMRQIEX-UHFFFAOYSA-L 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- LESFYQKBUCDEQP-UHFFFAOYSA-N tetraazanium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound N.N.N.N.OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O LESFYQKBUCDEQP-UHFFFAOYSA-N 0.000 description 1
- LUVHDTDFZLTVFM-UHFFFAOYSA-M tetramethylazanium;chlorate Chemical compound [O-]Cl(=O)=O.C[N+](C)(C)C LUVHDTDFZLTVFM-UHFFFAOYSA-M 0.000 description 1
- FDXKBUSUNHRUIZ-UHFFFAOYSA-M tetramethylazanium;chlorite Chemical compound [O-]Cl=O.C[N+](C)(C)C FDXKBUSUNHRUIZ-UHFFFAOYSA-M 0.000 description 1
- ZRVXFJFFJZFRLQ-UHFFFAOYSA-M tetramethylazanium;iodate Chemical compound [O-]I(=O)=O.C[N+](C)(C)C ZRVXFJFFJZFRLQ-UHFFFAOYSA-M 0.000 description 1
- ZCWKIFAQRXNZCH-UHFFFAOYSA-M tetramethylazanium;perchlorate Chemical compound C[N+](C)(C)C.[O-]Cl(=O)(=O)=O ZCWKIFAQRXNZCH-UHFFFAOYSA-M 0.000 description 1
- HLQAWDQQEJSALG-UHFFFAOYSA-M tetramethylazanium;periodate Chemical compound C[N+](C)(C)C.[O-]I(=O)(=O)=O HLQAWDQQEJSALG-UHFFFAOYSA-M 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- IJGSGCGKAAXRSC-UHFFFAOYSA-M tris(2-hydroxyethyl)-methylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(CCO)CCO IJGSGCGKAAXRSC-UHFFFAOYSA-M 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Abstract
The invention discloses application of a cleaning fluid composition. The cleaning fluid composition is useful for cleaning post-plasma etch residues and/or hard mask materials on microelectronic devices, and comprises the following components in mass percent: oxidizing agent, 0.001-0.010% oxidized glutathione, cysteine, 0.01-0.05% water-soluble polymer, organic base, chelating agent, corrosion inhibitor, ammonium carboxylate, 0.01-0.05% EO-PO polymer L42 and water, the balance being water. The cleaning fluid composition has strong corrosion inhibition on various metals and dielectric materials; the Ti, tiN, taN, tiNxOy hard mask or the hard mask comprising an alloy of the above may be removed highly selectively; the cleaning effect on the residues after plasma etching and the residues after ashing is good, and the cleaning agent has good application prospect.
Description
Technical Field
The present invention relates to the use of a cleaning fluid composition, and more particularly to the use of a "Ti, tiN, taN or TiNxOy hard mask", a hard mask comprising alloys of the foregoing, or other residues, to be selectively removed from such chips or wafers comprising low dielectric constant dielectric materials, TEOS, copper, cobalt and other low dielectric constant dielectric materials.
Background
In the chip manufacturing technology, the residual cleaning liquid after the plasma etching of the copper interconnection is mainly fluorine-containing cleaning liquid. With the continuous advancement of technology nodes, more and more materials are introduced, such as cobalt, titanium, tungsten, titanium nitride and other metal materials, low-k dielectric materials and the like, so that the compatibility of the traditional fluorine-containing cleaning solution with various materials is challenging.
Plasma dry etching is commonly used to fabricate vertical sidewall trenches and anisotropic interconnect vias in copper (Cu)/low dielectric constant dual damascene manufacturing processes. As technology nodes evolve to 45nm and smaller (e.g., 28-14 nm), the shrinking dimensions of semiconductor devices makes achieving precise profile control of vias and trenches more challenging. Integrated circuit manufacturers are researching the use of various hard masks to improve etch selectivity to low dielectric constant materials for better profile control. The hard mask material (e.g., ti/TiN) needs to be removed after the etching protection, and other metals and dielectric materials need to be protected during the cleaning process to remove the hard mask material, thus making compatibility of conventional fluorine-containing cleaning fluids with a variety of materials challenging.
Developing a compatible cleaning solution to selectively remove the hard mask is a problem in the art.
Disclosure of Invention
The invention aims to overcome the defect that the existing fluorine-containing cleaning solution selectively removes a hard mask, and provides application of a cleaning solution composition. The cleaning fluid composition of the present invention has one or more of the following advantages: the corrosion inhibition to various metals and dielectric materials is strong; the Ti, tiN, taN, tiNxOy hard mask or the hard mask comprising an alloy of the above may be removed highly selectively; the cleaning effect on the residues after plasma etching and the residues after ashing is good.
The invention solves the technical problems through the following technical proposal.
The invention provides the use of a cleaning fluid composition for cleaning post-plasma etch residues and/or hard mask materials on microelectronic devices, comprising the following components in mass fraction: oxidizing agent, 0.001-0.010% oxidized glutathione, cysteine, 0.01-0.05% water-soluble polymer, organic base, chelating agent, corrosion inhibitor, ammonium carboxylate, 0.01-0.05% EO-PO polymer L42 and water, the balance being water; the sum of the mass fractions of the components is 100 percent;
the corrosion inhibitor is amidoximated diaminomaleonitrile or a mixture of amidoximated diaminomaleonitrile-tolyltriazole;
The water-soluble polymer is prepared by a preparation method which comprises the following steps:
step (1): adding hydrophobic monomer methyl styrene and sodium dodecyl sulfate into aqueous solution of acrylamide and amphoteric monomer methacryloyloxyethyl-N, N-dimethyl propane sulfonate to obtain a mixture I;
the molar ratio of the acrylamide to the methacryloyloxyethyl-N, N-dimethylpropanesulfonate is (18-19): 1; the molar ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is (60-240) 1; the addition amount of the sodium dodecyl sulfate is 0.1 mol.L relative to the volume of the polymerization system -1 ；
Step (2): adding an initiator potassium persulfate into the mixture obtained in the step (1) to remove oxygen to obtain a mixture II; the amount of potassium persulfate added was 4 mmol.L relative to the volume of the polymerization system -1 ；
Step (3): reacting the mixture II obtained in the step (2) at 80-85 ℃ to obtain a water-soluble polymer;
the cleaning liquid composition does not comprise 1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole);
the mass fraction of each component is the mass percentage of the mass of each component in the total mass of all components in the cleaning liquid composition.
In the application of the cleaning fluid composition, the microelectronic device is preferably a silicon wafer.
In the application of the cleaning liquid composition, the hard mask material is preferably a Ti-containing material, a TiN-containing material, a TaN-containing material, a TiNxOy-containing material, or an alloy containing Ti, tiN, taN and TiNxOy.
In the application of the cleaning composition, it is preferable to impregnate the microelectronic device in the cleaning composition. The time of the impregnation may be 5 to 30 minutes, preferably 20 minutes. The temperature of the impregnation may be 45-60 ℃, preferably 50 ℃.
The mass fraction of the oxidizing agent in the cleaning liquid composition may be in an amount conventional in the art, preferably 10-30%, such as 10%, 15% or 30%.
The oxidizing agent in the cleaning liquid composition may be an oxidizing agent conventional in the art, preferably hydrogen peroxide (H) 2 O 2 ) N-methylmorpholine oxide (NMMO or NMO), benzoyl peroxide, tetrabutylammonium peroxymonosulfate, ozone, ferric chloride, permanganate, perborate, perchlorate, persulfate, ammonium peroxodisulfate, peracetic acid, nitric acid (HNO) 3 ) Ammonium chlorite (NH) 4 ClO 2 ) Ammonium chlorate (NH) 4 ClO 3 ) Ammonium iodate (NH) 4 IO 3 ) Ammonium perborate (NH) 4 BO 3 ) Ammonium perchlorate (NH) 4 ClO 4 ) Ammonium periodate (NH) 4 IO 3 ) Ammonium persulfate ((NH) 3 ) 2 S 2 O 8 ) Tetramethylammonium chlorite ((N (CH) 3 ) 4 ClO 2 ) Tetramethyl ammonium chlorate ((N (CH) 3 ) 4 ClO 3 ) Tetramethyl ammonium iodate (N (CH) 3 ) 4 IO 3 ) Tetramethyl ammonium perborate ((N (CH) 3 ) 4 BO 3 ) Tetramethyl ammonium perchlorate ((N (CH) 3 ) 4 )ClO 4 ) Tetramethyl ammonium periodate ((N (CH) 3 ) 4 IO 4 ) Tetramethyl ammonium persulfate ((N (NH) 4 ) 4 S 2 O 8 ) Urea peroxide ((CO (NH) 2 ) 2 )H 2 O 2 ) And peracetic acid (CH) 3 (CO) OOH), more preferably one or more of hydrogen peroxide, urea peroxide and peracetic acid, most preferably hydrogen peroxide.
The mass fraction of oxidized glutathione in the cleaning fluid composition may be 0.005-0.010%, for example 0.005% or 0.010%.
The mass fraction of the cysteine in the cleaning solution composition may be in an amount conventional in the art, preferably 0.001-0.250%, such as 0.15%, 0.20% or 0.25%.
In the cleaning liquid composition, the mass fraction of the water-soluble polymer can be 0.010%, 0.025% or 0.050%.
In the cleaning liquid composition, the water-soluble polymer can be one or more of a water-soluble polymer I1, a water-soluble polymer I2, a water-soluble polymer I3, a water-soluble polymer I4, a water-soluble polymer I5 and a water-soluble polymer I6;
Wherein the water-soluble polymer I1 is prepared by the preparation method; in the step (1), the feeding mole ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is 60:1; in the step (3), the temperature of the reaction is 80 ℃; preferably, the water-soluble polymer I1 is prepared according to the preparation method in the example 1 of the patent CN 104086702A; wherein, the reaction temperature is adjusted from 65 ℃ to 80 ℃ and other conditions are the same;
wherein the water-soluble polymer I2 is prepared by the preparation method; in the step (1), the feeding mole ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is 140:1; in the step (3), the temperature of the reaction is 80 ℃; preferably, the water-soluble polymer I2 is prepared according to the preparation method in example 3 of the patent CN 104086702A; wherein, the reaction temperature is adjusted from 70 ℃ to 80 ℃ and other conditions are the same;
wherein the water-soluble polymer I3 is prepared by the preparation method; in the step (1), the feeding mole ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is 100:1; in the step (3), the temperature of the reaction is 80 ℃; preferably, the water-soluble polymer I3 is prepared according to the preparation method in example 2 of the patent CN 104086702A; wherein, the reaction temperature is adjusted from 65 ℃ to 80 ℃ and other conditions are the same;
Wherein the water-soluble polymer I4 is prepared by the preparation method; in the step (1), the feeding mole ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is 240:1; in the step (3), the temperature of the reaction is 80 ℃; preferably, the water-soluble polymer I4 is prepared according to the preparation method in example 5 of the patent CN 104086702A; wherein, the reaction temperature is adjusted from 65 ℃ to 80 ℃ and other conditions are the same;
wherein the water-soluble polymer I5 is prepared by the preparation method; in the step (1), the feeding mole ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is 60:1; in the step (3), the temperature of the reaction is 80 ℃; preferably, the water-soluble polymer I5 is prepared according to the preparation method in example 1 of the patent CN 104086702A; wherein, the reaction temperature is adjusted from 65 ℃ to 85 ℃ and other conditions are the same;
wherein the water-soluble polymer I6 is prepared by the preparation method; in the step (1), the feeding mole ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is 140:1; in the step (3), the temperature of the reaction is 80 ℃; preferably, the water-soluble polymer I6 is prepared according to the preparation method in example 3 of the patent CN 104086702A; wherein the reaction temperature was adjusted from 70℃to 85℃under the same conditions.
The mass fraction of the organic base in the cleaning liquid composition may be in the amounts conventional in the art, preferably 1.0-5.0%, for example 1.0%, 2.5% or 5.0%.
In the cleaning solution composition, the organic base may be one or more of tetramethylammonium hydroxide (TMAH), tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetraethylammonium hydroxide (TEAH), benzyltrimethylammonium hydroxide (BTAH), choline, (2-hydroxyethyl) trimethylammonium hydroxide, tris (2-hydroxyethyl) methylammonium hydroxide, monoethanolamine (MEA), diglycolamine (DGA), triethanolamine (TEA), isobutylamine, isopropanolamine, tetrabutylphosphonium hydroxide (TBPH) and tetramethylguanidine, preferably one or more of tetramethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetraethylammonium hydroxide and choline, and most preferably tetramethylammonium hydroxide.
The chelating agent may be present in the cleaning composition in amounts conventional in the art, preferably in amounts of 0.01 to 2.00%, for example 0.01%, 1.00% or 2.00%.
The chelating agent in the cleaning solution composition may be a chelating agent conventional in the art, preferably 1, 2-cyclohexanediamine-N, N, N ', N' -tetraacetic acid (CDTA), ethylenediamine tetraacetic acid (EDTA), nitrilotriacetic acid, diethylenetriamine pentaacetic acid, 1,4,7, 10-tetraazacyclododecane-1, 4,7, 10-tetraacetic acid, ethyleneglycol tetraacetic acid (EGTA), 1, 2-bis (o-aminophenoxy) ethane-N, N, N ', one or more of N' -tetraacetic acid, N- {2- [ bis (carboxymethyl) amino ] ethyl } -N- (2-hydroxyethyl) glycine (HEDTA), ethylenediamine-N, N '-bis (2-hydroxyphenylacetic acid) (EDDHA), dioxaoctamethylenediaza tetraacetic acid (dotta) and triethylenetetramine hexaacetic acid (TTHA), more preferably 1, 2-cyclohexanediamine-N, N' -tetraacetic acid and/or ethylenediamine tetraacetic acid, most preferably ethylenediamine tetraacetic acid.
The cleaning fluid composition may contain the corrosion inhibitor in an amount of about 0.01 to about 2.00%, such as about 0.01%, about 0.50% or about 2.00% by weight, as is conventional in the art.
In the cleaning liquid composition, the mass ratio of the amidoximated diaminomaleonitrile to the tolyltriazole in the amidoximated diaminomaleonitrile-tolyltriazole mixture is preferably 1:1.
In the cleaning solution composition, the amidoximated diamino Ma Laijing is preferably prepared by a process comprising the steps of:
at K 2 CO 3 NH is added in the presence of a catalyst at a temperature of 75-95 DEG C 2 OH-HCl and diaminomaleonitrile react in aqueous ethanol to give amidoximated diaminomaleonitrile.
The mass fraction of the ammonium carboxylate in the cleaning liquid composition may be in an amount conventional in the art, preferably 0.5-3.0%, for example 0.5%, 1.0% or 3.0%.
In the cleaning liquid composition, the ammonium carboxylate may be one or more of ammonium carboxylate, preferably ammonium oxalate, ammonium lactate, ammonium tartrate, ammonium citrate, ammonium acetate, ammonium carbamate, ammonium carbonate, ammonium benzoate, ammonium ethylenediamine tetraacetate, ammonium succinate, ammonium formate and ammonium 1-H-pyrazole-3-carboxylate, preferably ammonium oxalate and/or ammonium citrate, most preferably ammonium oxalate.
The mass fraction of EO-PO polymer L42 in the cleaning fluid composition may be 0.01%, 0.03% or 0.05%.
In the cleaning liquid composition, the water is preferably deionized water;
in the cleaning liquid composition, the cleaning liquid composition preferably does not comprise a passivating agent; the passivating agent may be any passivating agent conventional in the art.
In one embodiment, the mass fraction of the oxidizing agent in the cleaning liquid composition is 10-30%;
the mass fraction of the oxidized glutathione is 0.001-0.010%;
the mass fraction of the cysteine is 0.001-0.250%;
the mass fraction of the water-soluble polymer is 0.01-0.05%;
the mass fraction of the organic alkali is 1.0-5.0%;
the mass fraction of the chelating agent is 0.01-2.00%;
the mass fraction of the corrosion inhibitor is 0.01-2.00%;
the mass fraction of the ammonium carboxylate is 0.5-3.0%;
the mass fraction of the EO-PO polymer L42 is 0.01-0.05%;
the oxidant is one or more of hydrogen peroxide, carbamide peroxide and peracetic acid;
the water-soluble polymer is one or more of water-soluble polymers I1, I2, I3, I4, I5 and I6;
The organic base is tetramethyl ammonium hydroxide and/or choline;
the chelating agent is 1, 2-cyclohexanediamine-N, N, N ', N' -tetraacetic acid and/or ethylenediamine tetraacetic acid;
the corrosion inhibitor is amidoximated diaminomaleonitrile or a mixture of amidoximated diaminomaleonitrile-tolyltriazole; the mass ratio of the amidoximated diaminomaleonitrile to the tolyltriazole in the amidoximated diaminomaleonitrile-tolyltriazole mixture is preferably 1:1;
the ammonium carboxylate is ammonium oxalate and/or ammonium citrate;
the water is deionized water.
In one embodiment, the cleaning fluid composition wherein the oxidizing agent is hydrogen peroxide; the mass fraction of the hydrogen peroxide is 10-30%;
the mass fraction of the oxidized glutathione is 0.001-0.01%;
the mass fraction of the cysteine is 0.001-0.25%;
the water-soluble polymer is the water-soluble polymer I1; the mass fraction of the water-soluble polymer I1 is 0.01-0.05%;
the organic base is tetramethyl ammonium hydroxide; the mass fraction of the tetramethylammonium hydroxide is 1-5%;
the chelating agent is ethylenediamine tetraacetic acid; the mass fraction of the ethylenediamine tetraacetic acid is 0.01-2%;
The corrosion inhibitor is amidoximated diamino Ma Laijing; the mass fraction of the amidoximation diaminomaleonitrile is 0.01-2.00%;
the ammonium carboxylate is ammonium oxalate; the mass fraction of the ammonium oxalate is 0.5-3.0%;
the mass fraction of the EO-PO polymer L42 is 0.01-0.05%;
the water is deionized water; the deionized water is used for supplementing the balance.
In one embodiment, the cleaning liquid composition comprises the oxidant with the mass fraction of 15%; the oxidant is one or more of hydrogen peroxide, carbamide peroxide and peracetic acid;
the mass fraction of the oxidized glutathione is 0.005%;
the mass fraction of the cysteine is 0.25%;
the mass fraction of the water-soluble polymer is 0.025%; the water-soluble polymer is one or more of water-soluble polymers I1, I2, I3, I4, I5 and I6;
the mass fraction of the organic alkali is 2.50%; the organic base is tetramethyl ammonium hydroxide and/or choline;
the mass fraction of the chelating agent is 1.00%; the chelating agent is ethylenediamine tetraacetic acid and/or 1, 2-cyclohexanediamine-N, N, N ', N' -tetraacetic acid;
The mass fraction of the corrosion inhibitor is 0.50%; the corrosion inhibitor is amidoximated diaminomaleonitrile or a mixture of amidoximated diaminomaleonitrile-tolyltriazole; the mass ratio of the amidoximated diaminomaleonitrile to the tolyltriazole in the amidoximated diaminomaleonitrile-tolyltriazole mixture is preferably 1:1;
the mass fraction of the ammonium carboxylate is 1.00%; the ammonium carboxylate is ammonium oxalate and/or ammonium citrate;
the mass fraction of the EO-PO polymer L42 is 0.05%;
the water is used for supplementing the balance; the water is deionized water.
In one embodiment, the cleaning liquid composition is any one of the following components in percentage by mass:
group 1:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I1, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediamine tetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% EO-PO polymer L42 deionized water, the balance being deionized water;
group 2:10.0% hydrogen peroxide, 0.010% oxidized glutathione, 0.15% cysteine, 0.01% water-soluble polymer I1, 1.00% tetramethyl ammonium hydroxide, 0.01% ethylenediamine tetraacetic acid, 0.01% amidoximated diaminomaleonitrile, 0.50% ammonium oxalate, 0.01% EO-PO polymer L42 and deionized water, the balance being deionized water;
Group 3:30.0% hydrogen peroxide, 0.010% oxidized glutathione, 0.25% cysteine, 0.050% water-soluble polymer I1, 5.0% tetramethylammonium hydroxide, 2.0% ethylenediamine tetraacetic acid, 2.0% amidoximated diaminomaleonitrile, 3.0% ammonium oxalate, 0.03% EO-PO polymer L42 and deionized water, the balance being deionized water;
group 4:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.20% cysteine, 0.025% water-soluble polymer I1, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediamine tetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% EO-PO polymer L42, and deionized water, the balance being deionized water;
group 5:30.0% hydrogen peroxide, 0.010% oxidized glutathione, 0.15% cysteine, 0.025% water-soluble polymer I1, 5.0% tetramethylammonium hydroxide, 2.0% ethylenediamine tetraacetic acid, 2.0% amidoximated diaminomaleonitrile, 3.0% ammonium oxalate, 0.03% EO-PO polymer L42 and deionized water, the balance being deionized water;
group 6:15.0% carbamide peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I1, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediamine tetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% EO-PO polymer L42 and deionized water, the balance being deionized water;
Group 7:15.0% of peracetic acid, 0.005% of oxidized glutathione, 0.25% of cysteine, 0.025% of water-soluble polymer I1, 2.50% of tetramethylammonium hydroxide, 1.00% of ethylenediamine tetraacetic acid, 0.50% of amidoximated diaminomaleonitrile, 1.00% of ammonium oxalate, 0.05% of EO-PO polymer L42 and deionized water, and the balance of deionized water;
group 8:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I1, 2.50% choline, 1.00% ethylenediamine tetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% EO-PO polymer L42, and deionized water, the balance being deionized water;
group 9:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I1, 2.50% tetramethylammonium hydroxide, 1.00%1, 2-cyclohexanediamine-N, N, N ', N' -tetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% EO-PO polymer L42 and deionized water, the balance being deionized water;
group 10:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I1, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediamine tetraacetic acid, 0.50% amidoximated diaminomaleonitrile-tolyltriazole mixture (each 50% amidoximated diaminomaleonitrile and tolyltriazole by mass), 1.00% ammonium oxalate, 0.05% EO-PO polymer L42 and deionized water, the balance being deionized water;
Group 11:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I1, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediamine tetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% tri-ammonium citrate, 0.05% EO-PO polymer L42, and deionized water, the balance being deionized water;
group 12:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I2, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediamine tetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% EO-PO polymer L42, and deionized water, the balance being deionized water;
group 13:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I3, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediamine tetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% EO-PO polymer L42, and deionized water, the balance being deionized water;
group 14:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I4, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediamine tetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% EO-PO polymer L42, and deionized water, the balance being deionized water;
Group 15:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I5, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediamine tetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% EO-PO polymer L42, and deionized water, the balance being deionized water;
group 16:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I6, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediamine tetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% EO-PO polymer L42, and deionized water, the balance being deionized water.
In one embodiment, the cleaning liquid composition comprises the following components in percentage by mass: the oxidizing agent, the oxidized glutathione, the cysteine, the water-soluble polymer, the organic base, the chelating agent, the corrosion inhibitor, the ammonium carboxylate, the EO-PO polymer L42, and the water;
wherein the mass fraction of each component is as described above;
the oxidant, the water-soluble polymer, the organic base, the chelating agent, the corrosion inhibitor and the ammonium carboxylate are the same as those described above.
The components of the invention can be in split charging mode, and can be temporarily mixed when in use; the above-mentioned oxidizing agent is preferably separately packaged as component A, and the components other than the above-mentioned oxidizing agent are mixed and packaged as component B, and when in use, AB is mixed.
The invention also provides a cleaning liquid composition.
The invention also provides a kit comprising in one or more containers, said oxidizing agent, said oxidized glutathione, said cysteine, said water-soluble polymer, said organic base, said chelating agent, said corrosion inhibitor, said ammonium carboxylate, said EO-PO polymer L42, and said water in one or more containers.
Preferably, the oxidizing agent is placed in one of the containers separately.
The invention also provides for the use of a kit for cleaning microelectronic devices with post-plasma etching residues and/or hard mask materials.
The invention also provides a preparation method of the cleaning liquid composition, which comprises the following steps of mixing the components to obtain the cleaning liquid composition.
Wherein, the mixing is preferably to add the solid component in the components into the liquid component and stir the mixture uniformly.
Wherein the temperature of the mixing may be room temperature.
The above preferred conditions can be arbitrarily combined on the basis of not deviating from the common knowledge in the art, and thus, each preferred embodiment of the present invention can be obtained.
Other reagents and starting materials for the present invention, other than 1- (benzotriazol-1-methyl) -1- (2-methylbenzimidazole), amidoximated diaminomaleonitrile and water-soluble polymers are commercially available, wherein EO-PO polymer L31, EO-PO polymer L42, EO-PO polymer L62 and EO-PO polymer L81 are all purchased from Nantong Jinlai chemical Co.
The volume of the polymerization system in the present invention refers to the volume of acrylamide and the amphoteric monomer methacryloyloxyethyl-N, N-dimethylpropanesulfonate when dissolved in water.
In the present invention, room temperature is 10-30 ℃.
The invention has the positive progress effects that: the cleaning liquid composition is used for cleaning materials with post-plasma etching residues and/or hard masks on microelectronic devices, can remove Ti, tiN, taN, tiNxOy hard masks and hard masks containing alloys of the above materials with high selectivity, and has good cleaning effect on post-plasma etching residues and post-ashing residues. The cleaning liquid composition for selectively removing the hard mask has strong corrosion inhibition on various metals and dielectrics and good cleaning effect.
Detailed Description
The invention is further illustrated by means of the following examples, which are not intended to limit the scope of the invention. The experimental methods, in which specific conditions are not noted in the following examples, were selected according to conventional methods and conditions, or according to the commercial specifications.
1- (benzotriazol-1-methyl) -1- (2-methylbenzimidazole)
The comparative example of the present invention, 1- (benzotriazol-1-methyl) -1- (2-methylbenzimidazole), was self-made, which was prepared according to example 2 of patent CN 106188103B.
Water-soluble polymers A1 to A5
The comparative water-soluble polymer A1 of the present invention was self-made, which was prepared according to example 1 of the patent CN 104086702A;
the comparative water-soluble polymer A2 of the present invention was self-made, which was prepared according to example 2 of the patent CN 104086702A;
the comparative water-soluble polymer A3 of the present invention was self-made, which was prepared according to example 3 of the patent CN 104086702A;
the comparative water-soluble polymer A4 of the present invention was self-made, which was prepared according to example 4 of patent CN 104086702A;
comparative example Water-soluble Polymer A5 of the present invention was self-made, which was prepared according to example 5 of patent CN 104086702A.
Water-soluble polymers I1 to I6
The water-soluble polymer I1 in the embodiment of the invention is self-made and is prepared by modifying the reaction temperature from 65 ℃ to 80 ℃ according to the embodiment 1 in the patent CN 104086702A;
the water-soluble polymer I2 in the embodiment of the invention is self-made and is prepared by modifying the reaction temperature from 70 ℃ to 80 ℃ only according to the embodiment 3 in the patent CN 104086702A;
the water-soluble polymer I3 in the embodiment of the invention is self-made and is prepared by modifying the reaction temperature from 65 ℃ to 80 ℃ only according to the embodiment 2 in the patent CN 104086702A;
the water-soluble polymer I4 in the embodiment of the invention is self-made and is prepared by modifying the reaction temperature from 65 ℃ to 80 ℃ according to the embodiment 5 in the patent CN 104086702A;
the water-soluble polymer I5 in the embodiment of the invention is self-made and is prepared by modifying the reaction temperature from 65 ℃ to 85 ℃ only according to the embodiment 1 in the patent CN 104086702A;
the water-soluble polymer I6 of the present invention was self-made, which was prepared by merely modifying the reaction temperature from 70℃to 85℃according to example 3 of the patent CN 104086702A.
Amidoximated diamino Ma Laijing
A step of preparing amidoximated diaminomaleonitrile; NH is added to 2 OH HCl and K 2 CO 3 Dissolving in ethanol water solution to obtain mixed solution, adding diaminomaleonitrile into the mixed solution, heating to 75-95 ℃ under the protection of nitrogen gas for reaction for 4-8h, centrifuging after the reaction, collecting samples, washing with ethanol and water respectively, and freeze-drying to obtain amidoximated diaminomaleonitrile.
In the following examples, the specific operating temperatures are not limited, and all refer to being conducted under room temperature conditions. Room temperature is 10-30 ℃.
The cleaning liquid composition of the present invention comprises the following components: the types and amounts of oxidizing agent, oxidized glutathione, cysteine, water-soluble polymer, organic base, chelating agent, corrosion inhibitor, ammonium carboxylate, EO-PO polymer L42, and deionized water are listed in tables 1 and 2, respectively.
The cleaning liquid composition of the present invention and the cleaning liquid composition of the comparative example were each obtained by adding a solid component to a liquid component in accordance with the components and contents in tables 1 and 2, and stirring uniformly.
Examples 1 to 16
TABLE 1
TABLE 2
Comparative examples 1 to 22 below are screens based on the kinds or contents of components performed in example 1.
Comparative example 1
The component oxidized glutathione in example 1 was replaced with reduced glutathione, the others being unchanged.
Comparative example 2
Oxidized glutathione was removed in example 1, otherwise unchanged.
Comparative example 3
The component cysteine was removed from example 1, the others being unchanged.
Comparative example 4
The component cysteine in example 1 was replaced with arginine, the others being unchanged.
Comparative example 5
The component cysteine in example 1 was replaced with histidine, the others being unchanged.
Comparative example 6
The water-soluble polymer I1 as the component in example 1 was replaced with a water-soluble polymer A1, and the others were unchanged.
Comparative example 7
The component water-soluble polymer I1 in example 1 was replaced with a water-soluble polymer A2, and the others were unchanged.
Comparative example 8
The water-soluble polymer I1 of the component in example 1 was replaced with the water-soluble polymer A3, and the others were unchanged.
Comparative example 9
The component water-soluble polymer I1 in example 1 was replaced with a water-soluble polymer A4, and the others were unchanged.
Comparative example 10
The component water-soluble polymer I1 in example 1 was replaced with a water-soluble polymer A5, and the others were unchanged.
Comparative example 11
The component EO-PO polymer L42 in example 1 was replaced with EO-PO polymer L31, the others being unchanged.
Comparative example 12
The component EO-PO polymer L42 in example 1 was replaced with EO-PO polymer L62, the others being unchanged.
Comparative example 13
The component EO-PO polymer L42 in example 1 was replaced with EO-PO polymer L81, the others being unchanged.
Comparative example 14
The water-soluble polymer I1 in example 1 was removed, and the others were unchanged.
Comparative example 15
The content of the water-soluble polymer I1 in example 1 was adjusted to 0.005% with the other components unchanged.
Comparative example 16
The content of oxidized glutathione in example 1 was adjusted to 0.020%, and the other was unchanged.
Comparative example 17
The content of the water-soluble polymer I1 in example 1 was adjusted to 0.060, and the other was unchanged.
Comparative example 18
The EO-PO polymer L42 content in example 1 was adjusted to 0.005% with the other matters being unchanged.
Comparative example 19
In example 1, 0.70% by mass of passivating agent 1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole) was added, the others being unchanged.
Comparative example 20
The EO-PO polymer L42 content in example 1 was adjusted to 0.06% and the others were unchanged.
Comparative example 21
In example 1, 2.00% by mass of passivating agent 1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole) was added, the others being unchanged.
Comparative example 22
The component amidoximated diamino Ma Laijing of example 1 was replaced with a mixture of benzotriazole and amidoximated diamino maleonitrile; the mass percentages of benzotriazole and amidoximated diaminomaleonitrile were each 50% and the others unchanged.
Effect examples
1. Etch rate
TABLE 3 Table 3
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TABLE 4 Table 4
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Remarks: the "TiN" in the table is PVD (Physical Vapor Deposition) physical vapor deposition TiN.
In Table 3, the cleaning liquid composition of the present invention has very low etching rates for AlNxOy, alN, W, cu, LP-TEOS, BD2, siCN and Co on silicon wafers, which are all smaller than Hardly corroding the interconnection material on the device; the cleaning liquid compositions which are not in the scope of the application have slightly higher etching rates for the above-mentioned materials, which are all greater than +.>Up to->It is possible to corrode interconnect materials on the device.
In Table 4, the cleaning liquid composition of the present invention has extremely high etching rates for Ti, tiN, taN and TiNxOy on silicon wafers, which are both greater thanUp to->The hard mask can be removed rapidly; the cleaning liquid composition not in the scope of the application has extremely low etching rate to the above-mentioned materials, and is not at maximum +.>The lowest is only +.>
In combination with tables 3 and 4, the cleaning solution composition of the present invention has a high etching selectivity to Ti, tiN, taN and TiNxOy on silicon wafers at a selectivity ratio of at least 150:1 with respect to the interconnect material on the devices in table 3.
2. Cleaning effect
The cleaning effect is classified into four grades: a-no residue was observed; b-very little residue was observed; c-small residues were observed; d-significantly more residue was observed.
The corrosion effects are rated in four classes: a-compatibility is good, and undercut is avoided; b-very slight undercut; c-having a small undercut; d-undercut is more pronounced and severe.
TABLE 5
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It can be seen that the cleaning liquid composition of the present invention has excellent cleaning effect on patterned wafers having post-plasma etching residues and post-ashing residues.
Claims (23)
1. Use of a cleaning composition for cleaning microelectronic devices having post plasma etch residues and/or hard mask materials;
the cleaning fluid composition comprises the following components in percentage by mass: 10-30% of oxidant, 0.005-0.010% of oxidized glutathione, 0.15-0.25% of cysteine, 0.01-0.05% of water-soluble polymer, 1-5% of organic base, 0.01-2% of chelating agent, 0.01-2.00% of corrosion inhibitor, 0.5-3.0% of ammonium carboxylate, 0.01-0.05% of EO-PO polymer L42 and water, and the balance being water; the sum of the mass fractions of the components is 100 percent;
the oxidant is one or more of hydrogen peroxide, carbamide peroxide and peracetic acid;
the organic base is tetramethyl ammonium hydroxide and/or choline;
the chelating agent is ethylenediamine tetraacetic acid and/or 1, 2-cyclohexanediamine-N, N, N ', N' -tetraacetic acid;
the ammonium carboxylate is ammonium oxalate and/or ammonium citrate;
the corrosion inhibitor is amidoximated diaminomaleonitrile or a mixture of amidoximated diaminomaleonitrile-tolyltriazole;
the water-soluble polymer is prepared by a preparation method which comprises the following steps:
step (1): adding hydrophobic monomer methyl styrene and sodium dodecyl sulfate into aqueous solution of acrylamide and amphoteric monomer methacryloyloxyethyl-N, N-dimethyl propane sulfonate to obtain a mixture I;
The molar ratio of the acrylamide to the methacryloyloxyethyl-N, N-dimethylpropanesulfonate is (18-19): 1; the molar ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is (60-240) 1; the adding amount of the sodium dodecyl sulfate is 0.1 mol.L < -1 > relative to the volume of the polymerization system;
step (2): adding an initiator potassium persulfate into the mixture obtained in the step (1) to remove oxygen to obtain a mixture II; the addition amount of potassium persulfate is 4 mmol.L-1 relative to the volume of the polymerization system;
step (3): reacting the mixture II obtained in the step (2) at 80-85 ℃ to obtain a water-soluble polymer;
the cleaning liquid composition does not comprise 1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole);
the mass fraction of each component is the mass percentage of the mass of each component in the total mass of all components in the cleaning liquid composition.
2. Use of the cleaning fluid composition of claim 1, wherein the microelectronic device is a silicon wafer;
and/or the hard mask material is a Ti-containing material, a TiN-containing material, a TaN-containing material, a TiNxOy-containing material or an alloy containing Ti, tiN, taN and TiNxOy.
3. The use of the cleaning liquid composition according to claim 1, wherein the water-soluble polymer is one or more of water-soluble polymer I1, water-soluble polymer I2, water-soluble polymer I3, water-soluble polymer I4, water-soluble polymer I5 and water-soluble polymer I6;
wherein the water-soluble polymer I1 is prepared by the preparation method; in the step (1), the feeding mole ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is 60:1; in the step (3), the temperature of the reaction is 80 ℃;
wherein the water-soluble polymer I2 is prepared by the preparation method; in the step (1), the feeding mole ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is 140:1; in the step (3), the temperature of the reaction is 80 ℃;
wherein the water-soluble polymer I3 is prepared by the preparation method; in the step (1), the feeding mole ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is 100:1; in the step (3), the temperature of the reaction is 80 ℃;
wherein the water-soluble polymer I4 is prepared by the preparation method; in the step (1), the feeding mole ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is 240:1; in the step (3), the temperature of the reaction is 80 ℃;
Wherein the water-soluble polymer I5 is prepared by the preparation method; in the step (1), the feeding mole ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is 60:1; in the step (3), the temperature of the reaction is 85 ℃;
wherein the water-soluble polymer I6 is prepared by the preparation method; in the step (1), the feeding mole ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is 140:1; in the step (3), the temperature of the reaction is 85 ℃.
4. Use of a cleaning solution composition according to claim 1, wherein the mass ratio of the amidoximated diaminomaleonitrile to the tolyltriazole in the amidoximated diaminomaleonitrile-tolyltriazole mixture is 1:1.
5. Use of a cleaning fluid composition according to claim 1, wherein said amidoximated diaminomaleonitrile is prepared by a process comprising the steps of:
at K 2 CO 3 NH is added in the presence of a catalyst at a temperature of 75-95 DEG C 2 OH ∙ HCl and diaminomaleonitrile are reacted in aqueous ethanol to give amidoximated diaminomaleonitrile.
6. Use of a cleaning solution composition according to claim 1, wherein the water is deionized water.
7. The use of a cleaning fluid composition as claimed in claim 1, wherein the water-soluble polymer has a mass fraction of 0.010%, 0.025% or 0.050%.
8. Use of a cleaning fluid composition according to claim 1, wherein the EO-PO polymer L42 is present in an amount of 0.01%, 0.03% or 0.05% by mass.
9. Use of a cleaning fluid composition according to claim 1, wherein the cleaning fluid composition does not comprise a passivating agent.
10. Use of a cleaning fluid composition according to claim 1, wherein the oxidizing agent is present in an amount of 10%, 15% or 30% by mass.
11. The use of the cleansing liquid composition according to claim 1, wherein the oxidized glutathione is 0.005% or 0.010% by mass.
12. The use of a cleaning fluid composition according to claim 1, wherein the cysteine is present in an amount of 0.15%, 0.20% or 0.25% by mass.
13. Use of a cleaning fluid composition according to claim 1, characterized in that the organic base is present in a mass fraction of 1.0%, 2.5% or 5.0%.
14. Use of a cleaning fluid composition according to claim 1, wherein the chelating agent is present in an amount of 0.01%, 1.00% or 2.00% by mass.
15. Use of a cleaning fluid composition according to claim 1, wherein the corrosion inhibitor is present in an amount of 0.01%, 0.50% or 2.00% by mass.
16. Use of a cleaning fluid composition according to claim 1, characterized in that the mass fraction of ammonium carboxylate is 0.5%, 1.0% or 3.0%.
17. Use of a cleaning fluid composition according to claim 1, wherein the oxidizing agent is hydrogen peroxide.
18. Use of a cleaning solution composition according to claim 1, wherein the organic base is tetramethylammonium hydroxide.
19. Use of a cleaning fluid composition according to claim 1, wherein the chelating agent is ethylenediamine tetraacetic acid.
20. Use of a cleaning fluid composition according to claim 1, wherein the ammonium carboxylate is ammonium oxalate.
21. Use of a cleaning fluid composition according to claim 1, wherein the cleaning fluid composition is according to either scheme 1 or scheme 2:
scheme 1:
in the cleaning liquid composition, the oxidant is hydrogen peroxide; the mass fraction of the hydrogen peroxide is 10-30%;
The mass fraction of the oxidized glutathione is 0.001-0.01%;
the mass fraction of the cysteine is 0.001-0.25%;
the water-soluble polymer is a water-soluble polymer I1; the mass fraction of the water-soluble polymer I1 is 0.01-0.05%; the water-soluble polymer I1 is as claimed in claim 3;
the organic base is tetramethyl ammonium hydroxide; the mass fraction of the tetramethylammonium hydroxide is 1-5%;
the chelating agent is ethylenediamine tetraacetic acid; the mass fraction of the ethylenediamine tetraacetic acid is 0.01-2%;
the corrosion inhibitor is amidoximated diamino Ma Laijing; the mass fraction of the amidoximation diaminomaleonitrile is 0.01-2.00%;
the ammonium carboxylate is ammonium oxalate; the mass fraction of the ammonium oxalate is 0.5-3.0%;
the mass fraction of the EO-PO polymer L42 is 0.01-0.05%;
the water is deionized water; the deionized water is used for supplementing the balance;
scheme 2:
in the cleaning liquid composition, the mass fraction of the oxidant is 15%; the oxidant is one or more of hydrogen peroxide, carbamide peroxide and peracetic acid;
the mass fraction of the oxidized glutathione is 0.005%;
The mass fraction of the cysteine is 0.25%;
the mass fraction of the water-soluble polymer is 0.025%; the water-soluble polymer is one or more of water-soluble polymers I1, I2, I3, I4, I5 and I6; the water-soluble polymers I1, I2, I3, I4, I5 and I6 are as claimed in claim 3;
the mass fraction of the organic alkali is 2.50%; the organic base is tetramethyl ammonium hydroxide and/or choline;
the mass fraction of the chelating agent is 1.00%; the chelating agent is ethylenediamine tetraacetic acid and/or 1, 2-cyclohexanediamine-N, N, N ', N' -tetraacetic acid;
the mass fraction of the corrosion inhibitor is 0.50%; the corrosion inhibitor is amidoximated diaminomaleonitrile or a mixture of amidoximated diaminomaleonitrile-tolyltriazole; the mass ratio of the amidoximated diaminomaleonitrile to the tolyltriazole in the amidoximated diaminomaleonitrile-tolyltriazole mixture is 1:1;
the mass fraction of the ammonium carboxylate is 1.00%; the ammonium carboxylate is ammonium oxalate and/or ammonium citrate;
the mass fraction of the EO-PO polymer L42 is 0.05%;
the water is used for supplementing the balance; the water is deionized water.
22. Use of a cleaning fluid composition according to claim 1, characterized in that the cleaning fluid composition consists of any combination of the following components in mass fraction:
combination 1:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I1, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediamine tetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% EO-PO polymer L42, and deionized water, the balance being deionized water;
combination 2:10.0% hydrogen peroxide, 0.010% oxidized glutathione, 0.15% cysteine, 0.01% water-soluble polymer I1, 1.00% tetramethyl ammonium hydroxide, 0.01% ethylenediamine tetraacetic acid, 0.01% amidoximated diaminomaleonitrile, 0.50% ammonium oxalate, 0.01% EO-PO polymer L42 and deionized water, the balance being deionized water;
combination 3:30.0% hydrogen peroxide, 0.010% oxidized glutathione, 0.25% cysteine, 0.050% water-soluble polymer I1, 5.0% tetramethylammonium hydroxide, 2.0% ethylenediamine tetraacetic acid, 2.0% amidoximated diaminomaleonitrile, 3.0% ammonium oxalate, 0.03% EO-PO polymer L42 and deionized water, the balance being deionized water;
Combination 4:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.20% cysteine, 0.025% water-soluble polymer I1, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediamine tetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% EO-PO polymer L42, and deionized water, the balance being deionized water;
combination 5:30.0% hydrogen peroxide, 0.010% oxidized glutathione, 0.15% cysteine, 0.025% water-soluble polymer I1, 5.0% tetramethylammonium hydroxide, 2.0% ethylenediamine tetraacetic acid, 2.0% amidoximated diaminomaleonitrile, 3.0% ammonium oxalate, 0.03% EO-PO polymer L42 and deionized water, the balance being deionized water;
combination 6:15.0% carbamide peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I1, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediamine tetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% EO-PO polymer L42 and deionized water, the balance being deionized water;
combination 7:15.0% of peracetic acid, 0.005% of oxidized glutathione, 0.25% of cysteine, 0.025% of water-soluble polymer I1, 2.50% of tetramethylammonium hydroxide, 1.00% of ethylenediamine tetraacetic acid, 0.50% of amidoximated diaminomaleonitrile, 1.00% of ammonium oxalate, 0.05% of EO-PO polymer L42 and deionized water, and the balance of deionized water;
Combination 8:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I1, 2.50% choline, 1.00% ethylenediamine tetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% EO-PO polymer L42, and deionized water, the balance being deionized water;
combination 9:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I1, 2.50% tetramethylammonium hydroxide, 1.00%1, 2-cyclohexanediamine-N, N, N ', N' -tetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% EO-PO polymer L42 and deionized water, the balance being deionized water;
combination 10:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I1, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediamine tetraacetic acid, 0.50% mixture of amidoximated diaminomaleonitrile-tolyltriazole in a mass ratio of 1:1, 1.00% ammonium oxalate, 0.05% EO-PO polymer L42 and deionized water, the balance being deionized water;
combination 11:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I1, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediamine tetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% tri-ammonium citrate, 0.05% EO-PO polymer L42, and deionized water, the balance being deionized water;
Combination 12:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I2, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediamine tetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% EO-PO polymer L42, and deionized water, the balance being deionized water;
combination 13:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I3, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediamine tetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% EO-PO polymer L42, and deionized water, the balance being deionized water;
combination 14:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I4, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediamine tetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% EO-PO polymer L42, and deionized water, the balance being deionized water;
combination 15:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I5, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediamine tetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% EO-PO polymer L42, and deionized water, the balance being deionized water;
Combination 16:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I6, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediamine tetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% EO-PO polymer L42, and deionized water, the balance being deionized water;
in combination 1-16, the water-soluble polymers I1, I2, I3, I4, I5 and I6 are as defined in claim 3.
23. Use of a kit for cleaning microelectronic devices with post-plasma etching residues and/or hard mask materials;
the kit comprising one or more containers in which the cleaning solution composition of any one of claims 1-22 is disposed.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009058274A1 (en) * | 2007-10-29 | 2009-05-07 | Ekc Technology, Inc. | Chemical mechanical polishing and wafer cleaning composition comprising amidoxime compounds and associated method for use |
| CN101910057A (en) * | 2007-10-29 | 2010-12-08 | Ekc技术公司 | Stabilization of hydroxylamine containing solutions and method for their preparation |
| WO2012009639A2 (en) * | 2010-07-16 | 2012-01-19 | Advanced Technology Materials, Inc. | Aqueous cleaner for the removal of post-etch residues |
| WO2014089196A1 (en) * | 2012-12-05 | 2014-06-12 | Advanced Technology Materials, Inc. | Compositions for cleaning iii-v semiconductor materials and methods of using same |
| CN104086702A (en) * | 2014-07-24 | 2014-10-08 | 山东大学 | Benzene-ring-containing modified acrylamide water-soluble amphoteric polymer and preparation method thereof |
| WO2015054464A1 (en) * | 2013-10-11 | 2015-04-16 | E. I. Du Pont De Nemours And Company | Removal composition for selectively removing hard mask and methods thereof |
| CN105612599A (en) * | 2013-10-11 | 2016-05-25 | E.I.内穆尔杜邦公司 | Removal composition for selectively removing hard mask |
| CN113186044A (en) * | 2021-04-27 | 2021-07-30 | 上海新阳半导体材料股份有限公司 | Preparation method of fluorine-containing cleaning liquid composition |
| CN113430072A (en) * | 2020-03-23 | 2021-09-24 | 上海新阳半导体材料股份有限公司 | Cobalt-compatible semi-aqueous cleaning solution for removing hard mask, and preparation method and application thereof |
-
2022
- 2022-11-03 CN CN202211369078.1A patent/CN115725369B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009058274A1 (en) * | 2007-10-29 | 2009-05-07 | Ekc Technology, Inc. | Chemical mechanical polishing and wafer cleaning composition comprising amidoxime compounds and associated method for use |
| CN101910057A (en) * | 2007-10-29 | 2010-12-08 | Ekc技术公司 | Stabilization of hydroxylamine containing solutions and method for their preparation |
| WO2012009639A2 (en) * | 2010-07-16 | 2012-01-19 | Advanced Technology Materials, Inc. | Aqueous cleaner for the removal of post-etch residues |
| WO2014089196A1 (en) * | 2012-12-05 | 2014-06-12 | Advanced Technology Materials, Inc. | Compositions for cleaning iii-v semiconductor materials and methods of using same |
| WO2015054464A1 (en) * | 2013-10-11 | 2015-04-16 | E. I. Du Pont De Nemours And Company | Removal composition for selectively removing hard mask and methods thereof |
| CN105612599A (en) * | 2013-10-11 | 2016-05-25 | E.I.内穆尔杜邦公司 | Removal composition for selectively removing hard mask |
| CN104086702A (en) * | 2014-07-24 | 2014-10-08 | 山东大学 | Benzene-ring-containing modified acrylamide water-soluble amphoteric polymer and preparation method thereof |
| CN113430072A (en) * | 2020-03-23 | 2021-09-24 | 上海新阳半导体材料股份有限公司 | Cobalt-compatible semi-aqueous cleaning solution for removing hard mask, and preparation method and application thereof |
| CN113186044A (en) * | 2021-04-27 | 2021-07-30 | 上海新阳半导体材料股份有限公司 | Preparation method of fluorine-containing cleaning liquid composition |
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