CN115725369A - Application of cleaning fluid composition - Google Patents
Application of cleaning fluid composition Download PDFInfo
- Publication number
- CN115725369A CN115725369A CN202211369078.1A CN202211369078A CN115725369A CN 115725369 A CN115725369 A CN 115725369A CN 202211369078 A CN202211369078 A CN 202211369078A CN 115725369 A CN115725369 A CN 115725369A
- Authority
- CN
- China
- Prior art keywords
- water
- ammonium
- soluble polymer
- mass fraction
- diaminomaleonitrile
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 98
- 238000004140 cleaning Methods 0.000 title claims abstract description 94
- 239000012530 fluid Substances 0.000 title claims abstract description 6
- 229920003169 water-soluble polymer Polymers 0.000 claims abstract description 133
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 97
- 229920000642 polymer Polymers 0.000 claims abstract description 60
- 108010053070 Glutathione Disulfide Proteins 0.000 claims abstract description 52
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 claims abstract description 52
- 235000018417 cysteine Nutrition 0.000 claims abstract description 52
- YPZRWBKMTBYPTK-BJDJZHNGSA-N glutathione disulfide Chemical compound OC(=O)[C@@H](N)CCC(=O)N[C@H](C(=O)NCC(O)=O)CSSC[C@@H](C(=O)NCC(O)=O)NC(=O)CC[C@H](N)C(O)=O YPZRWBKMTBYPTK-BJDJZHNGSA-N 0.000 claims abstract description 52
- YPZRWBKMTBYPTK-UHFFFAOYSA-N oxidized gamma-L-glutamyl-L-cysteinylglycine Natural products OC(=O)C(N)CCC(=O)NC(C(=O)NCC(O)=O)CSSCC(C(=O)NCC(O)=O)NC(=O)CCC(N)C(O)=O YPZRWBKMTBYPTK-UHFFFAOYSA-N 0.000 claims abstract description 52
- -1 ammonium carboxylate Chemical class 0.000 claims abstract description 33
- 239000007800 oxidant agent Substances 0.000 claims abstract description 31
- 230000007797 corrosion Effects 0.000 claims abstract description 29
- 238000005260 corrosion Methods 0.000 claims abstract description 29
- 239000002738 chelating agent Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 26
- 239000003112 inhibitor Substances 0.000 claims abstract description 25
- 150000007530 organic bases Chemical class 0.000 claims abstract description 17
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 13
- 230000001590 oxidative effect Effects 0.000 claims abstract description 13
- 238000004377 microelectronic Methods 0.000 claims abstract description 9
- 239000000956 alloy Substances 0.000 claims abstract description 7
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 7
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 claims abstract description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 92
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 84
- 239000008367 deionised water Substances 0.000 claims description 73
- 229910021641 deionized water Inorganic materials 0.000 claims description 73
- DPZSNGJNFHWQDC-ARJAWSKDSA-N (z)-2,3-diaminobut-2-enedinitrile Chemical compound N#CC(/N)=C(/N)C#N DPZSNGJNFHWQDC-ARJAWSKDSA-N 0.000 claims description 60
- 239000000243 solution Substances 0.000 claims description 48
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 45
- VBIXEXWLHSRNKB-UHFFFAOYSA-N ammonium oxalate Chemical compound [NH4+].[NH4+].[O-]C(=O)C([O-])=O VBIXEXWLHSRNKB-UHFFFAOYSA-N 0.000 claims description 44
- 229960001484 edetic acid Drugs 0.000 claims description 44
- 238000002360 preparation method Methods 0.000 claims description 34
- 238000006243 chemical reaction Methods 0.000 claims description 31
- 239000007788 liquid Substances 0.000 claims description 29
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 24
- SFZULDYEOVSIKM-UHFFFAOYSA-N chembl321317 Chemical group C1=CC(C(=N)NO)=CC=C1C1=CC=C(C=2C=CC(=CC=2)C(=N)NO)O1 SFZULDYEOVSIKM-UHFFFAOYSA-N 0.000 claims description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims description 22
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 claims description 16
- FCKYPQBAHLOOJQ-UHFFFAOYSA-N Cyclohexane-1,2-diaminetetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)C1CCCCC1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UHFFFAOYSA-N 0.000 claims description 11
- 239000003513 alkali Substances 0.000 claims description 11
- GDDNTTHUKVNJRA-UHFFFAOYSA-N 3-bromo-3,3-difluoroprop-1-ene Chemical compound FC(F)(Br)C=C GDDNTTHUKVNJRA-UHFFFAOYSA-N 0.000 claims description 10
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 claims description 10
- 229960001231 choline Drugs 0.000 claims description 10
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 claims description 10
- 239000001393 triammonium citrate Substances 0.000 claims description 10
- 235000011046 triammonium citrate Nutrition 0.000 claims description 10
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 claims description 10
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 8
- LDZYRENCLPUXAX-UHFFFAOYSA-N 2-methyl-1h-benzimidazole Chemical compound C1=CC=C2NC(C)=NC2=C1 LDZYRENCLPUXAX-UHFFFAOYSA-N 0.000 claims description 7
- 229940078916 carbamide peroxide Drugs 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 6
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 239000000178 monomer Substances 0.000 claims description 5
- 238000006116 polymerization reaction Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 5
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 5
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 claims description 5
- LFTLOKWAGJYHHR-UHFFFAOYSA-N N-methylmorpholine N-oxide Chemical compound CN1(=O)CCOCC1 LFTLOKWAGJYHHR-UHFFFAOYSA-N 0.000 claims description 4
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 4
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims description 4
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 4
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 3
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 claims description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 3
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 claims description 3
- PZZHMLOHNYWKIK-UHFFFAOYSA-N eddha Chemical compound C=1C=CC=C(O)C=1C(C(=O)O)NCCNC(C(O)=O)C1=CC=CC=C1O PZZHMLOHNYWKIK-UHFFFAOYSA-N 0.000 claims description 3
- DEFVIWRASFVYLL-UHFFFAOYSA-N ethylene glycol bis(2-aminoethyl)tetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)CCOCCOCCN(CC(O)=O)CC(O)=O DEFVIWRASFVYLL-UHFFFAOYSA-N 0.000 claims description 3
- DFQPZDGUFQJANM-UHFFFAOYSA-M tetrabutylphosphanium;hydroxide Chemical compound [OH-].CCCC[P+](CCCC)(CCCC)CCCC DFQPZDGUFQJANM-UHFFFAOYSA-M 0.000 claims description 3
- KYVBNYUBXIEUFW-UHFFFAOYSA-N 1,1,3,3-tetramethylguanidine Chemical compound CN(C)C(=N)N(C)C KYVBNYUBXIEUFW-UHFFFAOYSA-N 0.000 claims description 2
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 2
- KWIPUXXIFQQMKN-UHFFFAOYSA-N 2-azaniumyl-3-(4-cyanophenyl)propanoate Chemical compound OC(=O)C(N)CC1=CC=C(C#N)C=C1 KWIPUXXIFQQMKN-UHFFFAOYSA-N 0.000 claims description 2
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 claims description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 2
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 claims description 2
- 239000005695 Ammonium acetate Substances 0.000 claims description 2
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 claims description 2
- 239000004251 Ammonium lactate Substances 0.000 claims description 2
- 239000004342 Benzoyl peroxide Substances 0.000 claims description 2
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 claims description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 claims description 2
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- WDLRUFUQRNWCPK-UHFFFAOYSA-N Tetraxetan Chemical compound OC(=O)CN1CCN(CC(O)=O)CCN(CC(O)=O)CCN(CC(O)=O)CC1 WDLRUFUQRNWCPK-UHFFFAOYSA-N 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- CBTVGIZVANVGBH-UHFFFAOYSA-N aminomethyl propanol Chemical compound CC(C)(N)CO CBTVGIZVANVGBH-UHFFFAOYSA-N 0.000 claims description 2
- 229940043376 ammonium acetate Drugs 0.000 claims description 2
- 235000019257 ammonium acetate Nutrition 0.000 claims description 2
- 229940090948 ammonium benzoate Drugs 0.000 claims description 2
- BVCZEBOGSOYJJT-UHFFFAOYSA-N ammonium carbamate Chemical compound [NH4+].NC([O-])=O BVCZEBOGSOYJJT-UHFFFAOYSA-N 0.000 claims description 2
- 239000001099 ammonium carbonate Substances 0.000 claims description 2
- 235000012501 ammonium carbonate Nutrition 0.000 claims description 2
- KHPLPBHMTCTCHA-UHFFFAOYSA-N ammonium chlorate Chemical compound N.OCl(=O)=O KHPLPBHMTCTCHA-UHFFFAOYSA-N 0.000 claims description 2
- VZTDIZULWFCMLS-UHFFFAOYSA-N ammonium formate Chemical compound [NH4+].[O-]C=O VZTDIZULWFCMLS-UHFFFAOYSA-N 0.000 claims description 2
- 229940059265 ammonium lactate Drugs 0.000 claims description 2
- 235000019286 ammonium lactate Nutrition 0.000 claims description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 2
- 239000012935 ammoniumperoxodisulfate Substances 0.000 claims description 2
- NHJPVZLSLOHJDM-UHFFFAOYSA-N azane;butanedioic acid Chemical compound [NH4+].[NH4+].[O-]C(=O)CCC([O-])=O NHJPVZLSLOHJDM-UHFFFAOYSA-N 0.000 claims description 2
- ZRDJERPXCFOFCP-UHFFFAOYSA-N azane;iodic acid Chemical compound [NH4+].[O-]I(=O)=O ZRDJERPXCFOFCP-UHFFFAOYSA-N 0.000 claims description 2
- RZOBLYBZQXQGFY-HSHFZTNMSA-N azanium;(2r)-2-hydroxypropanoate Chemical compound [NH4+].C[C@@H](O)C([O-])=O RZOBLYBZQXQGFY-HSHFZTNMSA-N 0.000 claims description 2
- NGPGDYLVALNKEG-UHFFFAOYSA-N azanium;azane;2,3,4-trihydroxy-4-oxobutanoate Chemical compound [NH4+].[NH4+].[O-]C(=O)C(O)C(O)C([O-])=O NGPGDYLVALNKEG-UHFFFAOYSA-N 0.000 claims description 2
- YUUVAZCKXDQEIS-UHFFFAOYSA-N azanium;chlorite Chemical compound [NH4+].[O-]Cl=O YUUVAZCKXDQEIS-UHFFFAOYSA-N 0.000 claims description 2
- URGYLQKORWLZAQ-UHFFFAOYSA-N azanium;periodate Chemical compound [NH4+].[O-]I(=O)(=O)=O URGYLQKORWLZAQ-UHFFFAOYSA-N 0.000 claims description 2
- 235000019400 benzoyl peroxide Nutrition 0.000 claims description 2
- KXDHJXZQYSOELW-UHFFFAOYSA-N carbonic acid monoamide Natural products NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 claims description 2
- KYQODXQIAJFKPH-UHFFFAOYSA-N diazanium;2-[2-[bis(carboxymethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [NH4+].[NH4+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O KYQODXQIAJFKPH-UHFFFAOYSA-N 0.000 claims description 2
- 230000002209 hydrophobic effect Effects 0.000 claims description 2
- 239000003999 initiator Substances 0.000 claims description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims description 2
- 229940102253 isopropanolamine Drugs 0.000 claims description 2
- 229920002521 macromolecule Polymers 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 claims description 2
- AENSXLNDMRQIEX-UHFFFAOYSA-L oxido sulfate;tetrabutylazanium Chemical compound [O-]OS([O-])(=O)=O.CCCC[N+](CCCC)(CCCC)CCCC.CCCC[N+](CCCC)(CCCC)CCCC AENSXLNDMRQIEX-UHFFFAOYSA-L 0.000 claims description 2
- 229960003330 pentetic acid Drugs 0.000 claims description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 claims description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 2
- LUVHDTDFZLTVFM-UHFFFAOYSA-M tetramethylazanium;chlorate Chemical compound [O-]Cl(=O)=O.C[N+](C)(C)C LUVHDTDFZLTVFM-UHFFFAOYSA-M 0.000 claims description 2
- ZRVXFJFFJZFRLQ-UHFFFAOYSA-M tetramethylazanium;iodate Chemical compound [O-]I(=O)=O.C[N+](C)(C)C ZRVXFJFFJZFRLQ-UHFFFAOYSA-M 0.000 claims description 2
- ZCWKIFAQRXNZCH-UHFFFAOYSA-M tetramethylazanium;perchlorate Chemical compound C[N+](C)(C)C.[O-]Cl(=O)(=O)=O ZCWKIFAQRXNZCH-UHFFFAOYSA-M 0.000 claims description 2
- HLQAWDQQEJSALG-UHFFFAOYSA-M tetramethylazanium;periodate Chemical compound C[N+](C)(C)C.[O-]I(=O)(=O)=O HLQAWDQQEJSALG-UHFFFAOYSA-M 0.000 claims description 2
- IJGSGCGKAAXRSC-UHFFFAOYSA-M tris(2-hydroxyethyl)-methylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(CCO)CCO IJGSGCGKAAXRSC-UHFFFAOYSA-M 0.000 claims description 2
- LRUDIIUSNGCQKF-UHFFFAOYSA-N 5-methyl-1H-benzotriazole Chemical compound C1=C(C)C=CC2=NNN=C21 LRUDIIUSNGCQKF-UHFFFAOYSA-N 0.000 claims 3
- RUSUZAGBORAKPY-UHFFFAOYSA-N acetic acid;n'-[2-(2-aminoethylamino)ethyl]ethane-1,2-diamine Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.NCCNCCNCCN RUSUZAGBORAKPY-UHFFFAOYSA-N 0.000 claims 2
- FTEDXVNDVHYDQW-UHFFFAOYSA-N BAPTA Chemical compound OC(=O)CN(CC(O)=O)C1=CC=CC=C1OCCOC1=CC=CC=C1N(CC(O)=O)CC(O)=O FTEDXVNDVHYDQW-UHFFFAOYSA-N 0.000 claims 1
- FAEYWWFACZPHRP-UHFFFAOYSA-N CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.NCCN.N.N.N Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.NCCN.N.N.N FAEYWWFACZPHRP-UHFFFAOYSA-N 0.000 claims 1
- CYHUVPKLZSRGIW-UHFFFAOYSA-N [NH4+].[NH4+].[NH4+].[NH4+].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O.NCCN Chemical compound [NH4+].[NH4+].[NH4+].[NH4+].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O.NCCN CYHUVPKLZSRGIW-UHFFFAOYSA-N 0.000 claims 1
- UZKLEUIGRDLZRP-UHFFFAOYSA-N acetic acid azane ethane-1,2-diamine Chemical compound N.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.NCCN UZKLEUIGRDLZRP-UHFFFAOYSA-N 0.000 claims 1
- 238000006392 deoxygenation reaction Methods 0.000 claims 1
- FDXKBUSUNHRUIZ-UHFFFAOYSA-M tetramethylazanium;chlorite Chemical compound [O-]Cl=O.C[N+](C)(C)C FDXKBUSUNHRUIZ-UHFFFAOYSA-M 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 10
- 238000001020 plasma etching Methods 0.000 abstract description 9
- 239000003989 dielectric material Substances 0.000 abstract description 7
- 238000004380 ashing Methods 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 230000005764 inhibitory process Effects 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 150000002739 metals Chemical class 0.000 abstract description 3
- 239000012459 cleaning agent Substances 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 30
- 239000010936 titanium Substances 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910020366 ClO 4 Inorganic materials 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229950007919 egtazic acid Drugs 0.000 description 2
- 238000005470 impregnation Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- LESFYQKBUCDEQP-UHFFFAOYSA-N tetraazanium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound N.N.N.N.OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O LESFYQKBUCDEQP-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- FYIHPNCKLYPALH-UHFFFAOYSA-N 2-[2-(2-aminophenoxy)ethenoxy]aniline Chemical compound NC1=CC=CC=C1OC=COC1=CC=CC=C1N FYIHPNCKLYPALH-UHFFFAOYSA-N 0.000 description 1
- BDDLHHRCDSJVKV-UHFFFAOYSA-N 7028-40-2 Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O BDDLHHRCDSJVKV-UHFFFAOYSA-N 0.000 description 1
- 239000004475 Arginine Substances 0.000 description 1
- 108010024636 Glutathione Proteins 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 description 1
- 125000000637 arginyl group Chemical group N[C@@H](CCCNC(N)=N)C(=O)* 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 description 1
- 229940077239 chlorous acid Drugs 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- IDGUHHHQCWSQLU-UHFFFAOYSA-N ethanol;hydrate Chemical compound O.CCO IDGUHHHQCWSQLU-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- RWSXRVCMGQZWBV-WDSKDSINSA-N glutathione Chemical group OC(=O)[C@@H](N)CCC(=O)N[C@@H](CS)C(=O)NCC(O)=O RWSXRVCMGQZWBV-WDSKDSINSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XKWFRVVFRZYIFP-UHFFFAOYSA-N triazanium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxymethyl)amino]acetate Chemical compound N.N.N.OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O XKWFRVVFRZYIFP-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Abstract
The invention discloses an application of a cleaning fluid composition. The cleaning solution composition can be used for cleaning residues and/or hard mask materials after plasma etching on a microelectronic device, and comprises the following components in percentage by mass: oxidant, 0.001-0.010% oxidized glutathione, cysteine, 0.01-0.05% water-soluble polymer, organic base, chelating agent, corrosion inhibitor, ammonium carboxylate, 0.01-0.05% EO-PO polymer L42 and water, the balance being water. The cleaning solution composition has strong corrosion inhibition on various metals and dielectric materials; the Ti, tiN, taN, tiNxOy hard mask or a hard mask comprising an alloy of the foregoing can be removed with high selectivity; the cleaning agent has good cleaning effect on residues after plasma etching and ashing, and has good application prospect.
Description
Technical Field
The present invention relates to the use of a cleaning composition, and more particularly to the use of a "Ti, tiN, taN or TiNxOy hard mask", a hard mask comprising an alloy of the foregoing, or other residues, to selectively remove from such chips or wafers comprising low dielectric constant dielectric materials, TEOS, copper, cobalt, and other low dielectric constant dielectric materials.
Background
In the chip manufacturing technology, the cleaning solution for residues after copper interconnection plasma etching is mainly fluorine-containing cleaning solution. With the continuous advance of technology nodes, more and more materials are introduced, such as metal materials of cobalt, titanium, tungsten, titanium nitride, and the like, and low-k dielectric materials, and the compatibility of the conventional fluorine-containing cleaning solution with various materials is challenged.
Plasma dry etching is commonly used to fabricate vertical sidewall trenches and anisotropic interconnect vias in copper (Cu)/low dielectric constant dual damascene fabrication processes. As technology nodes evolve to 45nm and smaller (e.g., 28-14 nm), the shrinking of semiconductor device dimensions makes it more challenging to achieve precise profile control of vias and trenches. Integrated circuit manufacturing companies are investigating the use of various hard masks to improve etch selectivity to low dielectric constant materials for better profile control. The hard mask material (e.g., ti/TiN) needs to be removed after etching protection, and other metal and dielectric materials need to be protected during the cleaning process for removing the hard mask material, thereby challenging compatibility of conventional fluorine-containing cleaning solutions with a variety of materials.
Developing a highly compatible cleaning solution for selectively removing the hard mask is a problem to be solved in the art.
Disclosure of Invention
The invention aims to overcome the defect that the conventional fluorine-containing cleaning solution selectively removes the hard mask, and provides application of a cleaning solution composition. The cleaning solution composition of the invention has one or more of the following advantages: the corrosion inhibition on various metals and dielectric materials is strong; the Ti, tiN, taN, tiNxOy hard mask or a hard mask comprising an alloy of the foregoing can be removed with high selectivity; the cleaning effect on residues after plasma etching and ashing is good.
The present invention solves the above technical problems by the following technical solutions.
The invention provides an application of a cleaning solution composition, which can be used for cleaning residues and/or hard mask materials after plasma etching on a microelectronic device, and comprises the following components in percentage by mass: oxidant, 0.001-0.010% oxidized glutathione, cysteine, 0.01-0.05% water-soluble macromolecule, organic alkali, chelating agent, corrosion inhibitor, ammonium carboxylate, 0.01-0.05% EO-PO polymer L42 and water, the balance being water; the sum of the mass fractions of all the components is 100 percent;
the corrosion inhibitor is amidoxime diaminomaleonitrile or amidoxime diaminomaleonitrile-tolutriazole mixture;
the water-soluble polymer is prepared by the following preparation method, and the preparation method comprises the following steps:
step (1): adding hydrophobic monomers of methyl styrene and sodium dodecyl sulfate into an aqueous solution of acrylamide and an amphoteric monomer of methacryloyloxyethyl-N, N-dimethyl propane sulfonate to obtain a mixture I;
the molar ratio of the acrylamide to the methacryloyloxyethyl-N, N-dimethylpropanesulfonate is (18-19): 1; the molar ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is (60-240): 1; the addition amount of the sodium dodecyl sulfate is 0.1 mol.L relative to the volume of a polymerization system -1 ；
Step (2): adding an initiator potassium persulfate into the mixture obtained in the step (1) for deoxidization to obtain a mixtureSubstance II; the amount of potassium persulfate added was 4 mmol. Multidot.L based on the volume of the polymerization system -1 ；
And (3): reacting the mixture II obtained in the step (2) at 80-85 ℃ to obtain a water-soluble polymer;
1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole) is not included in the cleaning solution composition;
the mass fraction of each component is the mass percentage of the mass of each component in the cleaning liquid composition in the total mass of all the components.
In the application of the cleaning solution composition, the microelectronic device is preferably a silicon wafer.
In the application of the cleaning liquid composition, the hard mask material is preferably a Ti-containing material, a TiN-containing material, a TaN-containing material, a TiNxOy-containing material or an alloy containing Ti, tiN, taN and TiNxOy.
In the application of the cleaning solution composition, it is preferred to dip the microelectronic device in the cleaning solution composition. The time for the impregnation may be 5 to 30min, preferably 20min. The temperature of the impregnation may be 45 to 60 c, preferably 50 c.
In the cleaning liquid composition, the mass fraction of the oxidizing agent may be an amount conventionally used in the art, and is preferably 10 to 30%, for example, 10%, 15%, or 30%.
In the cleaning liquid composition, the oxidizing agent can be an oxidizing agent conventional in the art, and is preferably hydrogen peroxide (H) 2 O 2 ) N-methylmorpholine oxide (NMMO or NMO), benzoyl peroxide, tetrabutylammonium peroxymonosulfate, ozone, ferric chloride, permanganate, perborate, perchlorate, persulfate, ammonium peroxodisulfate, peracetic acid, nitric acid (HNO) 3 ) Ammonium chlorite (NH) 4 ClO 2 ) Ammonium chlorate (NH) 4 ClO 3 ) Ammonium iodate (NH) 4 IO 3 ) Ammonium perborate (NH) 4 BO 3 ) Ammonium perchlorate (NH) 4 ClO 4 ) Ammonium periodate (NH) 4 IO 3 ) Ammonium persulfate ((NH) 3 ) 2 S 2 O 8 )、Tetramethylammonium chlorous acid ((N (CH) 3 ) 4 ClO 2 ) Tetramethylammonium chlorate ((N (CH) 3 ) 4 ClO 3 ) Tetramethylammonium iodate (N (CH) 3 ) 4 IO 3 ) Tetramethylammonium perborate ((N (CH) 3 ) 4 BO 3 ) Tetramethylammonium perchlorate ((N (CH) 3 ) 4 )ClO 4 ) Tetramethylammonium periodate ((N (CH) 3 ) 4 IO 4 ) Tetramethylammonium persulfate ((N (NH) 4 ) 4 S 2 O 8 ) Urea peroxide ((CO (NH) 2 ) 2 )H 2 O 2 ) And peroxyacetic acid (CH) 3 (CO) OOH), more preferably one or more of hydrogen peroxide, carbamide peroxide and peracetic acid, most preferably hydrogen peroxide.
In the cleaning liquid composition, the mass fraction of the oxidized glutathione may be 0.005 to 0.010%, for example, 0.005% or 0.010%.
In the cleaning fluid composition, the mass fraction of cysteine may be an amount conventionally used in the art, and is preferably 0.001 to 0.250%, for example 0.15%, 0.20% or 0.25%.
In the cleaning liquid composition, the mass fraction of the water-soluble polymer may be 0.010%, 0.025% or 0.050%.
In the cleaning liquid composition, the water-soluble polymer may be one or more of water-soluble polymer I1, water-soluble polymer I2, water-soluble polymer I3, water-soluble polymer I4, water-soluble polymer I5 and water-soluble polymer I6;
wherein the water-soluble polymer I1 is prepared by the preparation method; in the step (1), the feeding molar ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is 60; in the step (3), the reaction temperature is 80 ℃; preferably, the water-soluble polymer I1 is prepared according to the preparation method in example 1 of patent CN 104086702A; wherein the reaction temperature is adjusted from 65 ℃ to 80 ℃, and other conditions are the same;
wherein the water-soluble polymer I2 is prepared by the preparation method; in the step (1), the feeding molar ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is 140; in the step (3), the reaction temperature is 80 ℃; preferably, the water-soluble polymer I2 is prepared according to the preparation method in the patent CN104086702A, example 3; wherein the reaction temperature is adjusted from 70 ℃ to 80 ℃, and other conditions are the same;
wherein the water-soluble polymer I3 is prepared by the preparation method; in the step (1), the feeding molar ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is 100; in the step (3), the reaction temperature is 80 ℃; preferably, the water-soluble polymer I3 is prepared according to the preparation method in the embodiment 2 of the patent CN 104086702A; wherein the reaction temperature is adjusted from 65 ℃ to 80 ℃, and other conditions are the same;
wherein the water-soluble polymer I4 is prepared by the preparation method; in the step (1), the feeding molar ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is 240; in the step (3), the reaction temperature is 80 ℃; preferably, the water-soluble polymer I4 is prepared according to the preparation method in the patent CN104086702A, example 5; wherein the reaction temperature is adjusted from 65 ℃ to 80 ℃, and other conditions are the same;
wherein the water-soluble polymer I5 is prepared by the preparation method; in the step (1), the feeding molar ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is 60; in the step (3), the reaction temperature is 80 ℃; preferably, the water-soluble polymer I5 is prepared according to the preparation method in example 1 of patent CN 104086702A; wherein the reaction temperature is adjusted from 65 ℃ to 85 ℃, and other conditions are the same;
wherein the water-soluble polymer I6 is prepared by the preparation method; in the step (1), the feeding molar ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is 140; in the step (3), the reaction temperature is 80 ℃; preferably, the water-soluble polymer I6 is prepared according to the preparation method in the patent CN104086702A, example 3; wherein the reaction temperature was adjusted from 70 ℃ to 85 ℃ under the same conditions.
In the cleaning liquid composition, the mass fraction of the organic base may be the amount conventionally used in the art, and is preferably 1.0 to 5.0%, for example, 1.0%, 2.5% or 5.0%.
In the cleaning solution composition, the organic base may be an organic base conventional in the art, preferably one or more of tetramethylammonium hydroxide (TMAH), tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetraethylammonium hydroxide (TEAH), benzyltrimethylammonium hydroxide (BTAH), choline, (2-hydroxyethyl) trimethylammonium hydroxide, tris (2-hydroxyethyl) methylammonium hydroxide, monoethanolamine (MEA), diglycolamine (DGA), triethanolamine (TEA), isobutanol amine, isopropanolamine, tetrabutylphosphonium hydroxide (TBPH) and tetramethylguanidine, more preferably one or more of tetramethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetraethylammonium hydroxide and choline, and most preferably tetramethylammonium hydroxide.
In the cleaning liquid composition, the mass fraction of the chelating agent may be an amount conventionally used in the art, and is preferably 0.01 to 2.00%, for example, 0.01%, 1.00% or 2.00%.
In the cleaning solution composition, the chelating agent can be a chelating agent conventional in the art, preferably 1,2-cyclohexanediamine-N, N, N ', N ' -tetraacetic acid (CDTA), ethylenediaminetetraacetic acid (EDTA), nitrilotriacetic acid, diethylenetriaminepentaacetic acid, 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetraacetic acid, ethyleneglycol tetraacetic acid (EGTA), 1,2-bis (o-aminophenoxy) ethane-N, N, N ', one or more of N ' -tetraacetic acid, N- {2- [ bis (carboxymethyl) amino ] ethyl } -N- (2-hydroxyethyl) glycine (HEDTA), ethylenediamine-N, N ' -bis (2-hydroxyphenylacetic acid) (EDDHA), dioxaoctamethylenediazepine tetraacetic acid (DOTA) and triethylenetetraminehexaacetic acid (TTHA), more preferably 1,2-cyclohexanediamine-N, N, N ', N ' -tetraacetic acid and/or ethylenediaminetetraacetic acid, most preferably ethylenediaminetetraacetic acid.
In the cleaning liquid composition, the mass fraction of the corrosion inhibitor may be the amount conventionally used in the art, preferably 0.01 to 2.00%, for example 0.01%, 0.50% or 2.00%.
In the cleaning liquid composition, the mass ratio of the amidoximated diaminomaleonitrile to the tolyltriazole in the amidoximated diaminomaleonitrile-tolyltriazole mixture is preferably 1:1.
In the cleaning liquid composition, the amidoximated diaminomaleonitrile is preferably prepared by the following method, which comprises the following steps:
at K 2 CO 3 In the presence of NH at a temperature of 75-95 DEG C 2 And (3) reacting OH & HCl with diaminomaleonitrile in an aqueous ethanol solution to obtain amidoxime-modified diaminomaleonitrile.
In the cleaning liquid composition, the mass fraction of the ammonium carboxylate may be an amount conventionally used in the art, and is preferably 0.5 to 3.0%, for example, 0.5%, 1.0%, or 3.0%.
In the cleaning liquid composition, the ammonium carboxylate can be ammonium carboxylate which is conventional in the art, preferably one or more of ammonium oxalate, ammonium lactate, ammonium tartrate, triammonium citrate, ammonium acetate, ammonium carbamate, ammonium carbonate, ammonium benzoate, ammonium ethylenediaminetetraacetate, diammonium ethylenediaminetetraacetate, triammonium ethylenediaminetetraacetate, tetraammonium ethylenediaminetetraacetate, ammonium succinate, ammonium formate and 1-H-pyrazole-3-ammonium formate, preferably ammonium oxalate and/or triammonium citrate, and most preferably ammonium oxalate.
In the cleaning solution composition, the mass fraction of the EO-PO polymer L42 may be 0.01%, 0.03%, or 0.05%.
In the cleaning liquid composition, the water is preferably deionized water;
in the cleaning solution composition, the cleaning solution composition preferably does not comprise a passivating agent; the passivating agent may be one conventional in the art.
In one embodiment, the cleaning liquid composition comprises 10 to 30 mass percent of the oxidizing agent;
the mass fraction of the oxidized glutathione is 0.001-0.010%;
the mass fraction of the cysteine is 0.001-0.250%;
the mass fraction of the water-soluble polymer is 0.01-0.05%;
the mass fraction of the organic base is 1.0-5.0%;
the mass fraction of the chelating agent is 0.01-2.00%;
the mass fraction of the corrosion inhibitor is 0.01-2.00%;
the mass fraction of the ammonium carboxylate is 0.5-3.0%;
the mass fraction of the EO-PO polymer L42 is 0.01-0.05%;
the oxidant is one or more of hydrogen peroxide, carbamide peroxide and peroxyacetic acid;
the water-soluble polymer is one or more of the water-soluble polymers I1, I2, I3, I4, I5 and I6;
the organic alkali is tetramethyl ammonium hydroxide and/or choline;
the chelating agent is 1,2-cyclohexanediamine-N, N, N ', N' -tetraacetic acid and/or ethylenediamine tetraacetic acid;
the corrosion inhibitor is amidoxime diaminomaleonitrile or amidoxime diaminomaleonitrile-tolutriazole mixture; the mass ratio of the amidoxime diaminomaleonitrile to the tolyltriazole in the amidoxime diaminomaleonitrile-tolyltriazole mixture is preferably 1:1;
the ammonium carboxylate is ammonium oxalate and/or triammonium citrate;
the water is deionized water.
In one embodiment, in the cleaning solution composition, the oxidizing agent is hydrogen peroxide; the mass fraction of the hydrogen peroxide is 10-30%;
the mass fraction of the oxidized glutathione is 0.001-0.01%;
the mass fraction of the cysteine is 0.001-0.25%;
the water-soluble polymer is the water-soluble polymer I1; the mass fraction of the water-soluble polymer I1 is 0.01-0.05%;
the organic alkali is tetramethyl ammonium hydroxide; the mass fraction of the tetramethylammonium hydroxide is 1-5%;
the chelating agent is ethylenediamine tetraacetic acid; the mass fraction of the ethylene diamine tetraacetic acid is 0.01-2%;
the corrosion inhibitor is amidoxime diaminomaleonitrile; the mass fraction of the amidoxime-forming diaminomaleonitrile is 0.01-2.00%;
the ammonium carboxylate is ammonium oxalate; the mass fraction of the ammonium oxalate is 0.5-3.0%;
the mass fraction of the EO-PO polymer L42 is 0.01-0.05%;
the water is deionized water; and the deionized water is used for complementing the balance.
In one embodiment, in the cleaning liquid composition, the mass fraction of the oxidizing agent is 15%; the oxidant is one or more of hydrogen peroxide, carbamide peroxide and peroxyacetic acid;
the mass fraction of the oxidized glutathione is 0.005 percent;
the mass fraction of the cysteine is 0.25 percent;
the mass fraction of the water-soluble polymer is 0.025%; the water-soluble polymer is one or more of the water-soluble polymers I1, I2, I3, I4, I5 and I6;
the mass fraction of the organic base is 2.50 percent; the organic alkali is tetramethyl ammonium hydroxide and/or choline;
the mass fraction of the chelating agent is 1.00 percent; the chelating agent is ethylene diamine tetraacetic acid and/or 1,2-cyclohexanediamine-N, N, N ', N' -tetraacetic acid;
the mass fraction of the corrosion inhibitor is 0.50 percent; the corrosion inhibitor is diaminomaleonitrile oximated with amidoxime or a mixture of diaminomaleonitrile-tolutriazole oxided with amidoxime; the mass ratio of the amidoxime diaminomaleonitrile to the tolyltriazole in the amidoxime diaminomaleonitrile-tolyltriazole mixture is preferably 1:1;
the mass fraction of the ammonium carboxylate is 1.00 percent; the ammonium carboxylate is ammonium oxalate and/or triammonium citrate;
the mass fraction of the EO-PO polymer L42 is 0.05 percent;
the water is used for complementing the balance; the water is deionized water.
In one embodiment, the cleaning liquid composition is any one of the following components in percentage by mass:
group 1:15.0% of hydrogen peroxide, 0.005% of oxidized glutathione, 0.25% of cysteine, 0.025% of water-soluble polymer I1, 2.50% of tetramethylammonium hydroxide, 1.00% of ethylenediamine tetraacetic acid, 0.50% of amidoximated diaminomaleonitrile, 1.00% of ammonium oxalate, 0.05% of EO-PO polymer L42 deionized water, and the balance of deionized water;
group 2:10.0% of hydrogen peroxide, 0.010% of oxidized glutathione, 0.15% of cysteine, 0.01% of water-soluble polymer I1, 1.00% of tetramethylammonium hydroxide, 0.01% of ethylenediamine tetraacetic acid, 0.01% of amidoximated diaminomaleonitrile, 0.50% of ammonium oxalate, 0.01% of EO-PO polymer L42 and deionized water, and the balance is made up by deionized water;
group 3:30.0% of hydrogen peroxide, 0.010% of oxidized glutathione, 0.25% of cysteine, 0.050% of water-soluble polymer I1, 5.0% of tetramethylammonium hydroxide, 2.0% of ethylenediamine tetraacetic acid, 2.0% of amidoximated diaminomaleonitrile, 3.0% of ammonium oxalate, 0.03% of EO-PO polymer L42 and deionized water, and the balance is made up by deionized water;
group 4:15.0% of hydrogen peroxide, 0.005% of oxidized glutathione, 0.20% of cysteine, 0.025% of water-soluble polymer I1, 2.50% of tetramethylammonium hydroxide, 1.00% of ethylenediamine tetraacetic acid, 0.50% of amidoximated diaminomaleonitrile, 1.00% of ammonium oxalate, 0.05% of EO-PO polymer L42 and deionized water, and the balance being deionized water;
group 5:30.0% of hydrogen peroxide, 0.010% of oxidized glutathione, 0.15% of cysteine, 0.025% of water-soluble polymer I1, 5.0% of tetramethylammonium hydroxide, 2.0% of ethylenediamine tetraacetic acid, 2.0% of amidoximated diaminomaleonitrile, 3.0% of ammonium oxalate, 0.03% of EO-PO polymer L42 and deionized water, and the balance being deionized water;
group 6:15.0% of carbamide peroxide, 0.005% of oxidized glutathione, 0.25% of cysteine, 0.025% of water-soluble polymer I1, 2.50% of tetramethylammonium hydroxide, 1.00% of ethylenediamine tetraacetic acid, 0.50% of amidoximated diaminomaleonitrile, 1.00% of ammonium oxalate, 0.05% of EO-PO polymer L42 and deionized water, and the balance being deionized water;
group 7:15.0% of peroxyacetic acid, 0.005% of oxidized glutathione, 0.25% of cysteine, 0.025% of water-soluble polymer I1, 2.50% of tetramethylammonium hydroxide, 1.00% of ethylenediamine tetraacetic acid, 0.50% of amidoximated diaminomaleonitrile, 1.00% of ammonium oxalate, 0.05% of EO-PO polymer L42 and deionized water, and the balance being deionized water;
group 8:15.0% of hydrogen peroxide, 0.005% of oxidized glutathione, 0.25% of cysteine, 0.025% of water-soluble polymer I1, 2.50% of choline, 1.00% of ethylenediamine tetraacetic acid, 0.50% of amidoximated diaminomaleonitrile, 1.00% of ammonium oxalate, 0.05% of EO-PO polymer L42 and deionized water, and the balance is made up by deionized water;
group 9:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I1, 2.50% tetramethylammonium hydroxide, 1.00%1, 2-cyclohexanediamine-N, N, N ', N' -tetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% EO-PO polymer L42, and deionized water to make up the balance;
group 10:15.0% of hydrogen peroxide, 0.005% of oxidized glutathione, 0.25% of cysteine, 0.025% of water-soluble polymer I1, 2.50% of tetramethylammonium hydroxide, 1.00% of ethylenediamine tetraacetic acid, 0.50% of a mixture of amidoximated diaminomaleonitrile-tolyltriazole (the mass percentages of amidoximated diaminomaleonitrile and tolyltriazole are 50% respectively), 1.00% of ammonium oxalate, 0.05% of EO-PO polymer L42 and deionized water, and the balance being deionized water;
group 11:15.0% of hydrogen peroxide, 0.005% of oxidized glutathione, 0.25% of cysteine, 0.025% of water-soluble polymer I1, 2.50% of tetramethylammonium hydroxide, 1.00% of ethylenediamine tetraacetic acid, 0.50% of amidoximated diaminomaleonitrile, 1.00% of triammonium citrate, 0.05% of EO-PO polymer L42 and deionized water, and the balance of deionized water;
group 12:15.0% of hydrogen peroxide, 0.005% of oxidized glutathione, 0.25% of cysteine, 0.025% of water-soluble polymer I2, 2.50% of tetramethylammonium hydroxide, 1.00% of ethylenediamine tetraacetic acid, 0.50% of amidoximated diaminomaleonitrile, 1.00% of ammonium oxalate, 0.05% of EO-PO polymer L42 and deionized water, and the balance being deionized water;
group 13:15.0% of hydrogen peroxide, 0.005% of oxidized glutathione, 0.25% of cysteine, 0.025% of water-soluble polymer I3, 2.50% of tetramethylammonium hydroxide, 1.00% of ethylenediamine tetraacetic acid, 0.50% of amidoximated diaminomaleonitrile, 1.00% of ammonium oxalate, 0.05% of EO-PO polymer L42 and deionized water, and the balance being deionized water;
group 14:15.0% of hydrogen peroxide, 0.005% of oxidized glutathione, 0.25% of cysteine, 0.025% of water-soluble polymer I4, 2.50% of tetramethylammonium hydroxide, 1.00% of ethylenediamine tetraacetic acid, 0.50% of amidoximated diaminomaleonitrile, 1.00% of ammonium oxalate, 0.05% of EO-PO polymer L42, deionized water and the balance of deionized water;
group 15:15.0% of hydrogen peroxide, 0.005% of oxidized glutathione, 0.25% of cysteine, 0.025% of water-soluble polymer I5, 2.50% of tetramethylammonium hydroxide, 1.00% of ethylenediamine tetraacetic acid, 0.50% of amidoximated diaminomaleonitrile, 1.00% of ammonium oxalate, 0.05% of EO-PO polymer L42 and deionized water, and the balance being deionized water;
group 16:15.0% of hydrogen peroxide, 0.005% of oxidized glutathione, 0.25% of cysteine, 0.025% of water-soluble polymer I6, 2.50% of tetramethylammonium hydroxide, 1.00% of ethylenediamine tetraacetic acid, 0.50% of amidoximated diaminomaleonitrile, 1.00% of ammonium oxalate, 0.05% of EO-PO polymer L42, deionized water and the balance of deionized water.
In one embodiment, the cleaning solution composition comprises the following components in parts by mass: the above-mentioned oxidizing agent, the above-mentioned oxidized glutathione, the above-mentioned cysteine, the above-mentioned water-soluble polymer, the above-mentioned organic base, the above-mentioned chelating agent, the above-mentioned corrosion inhibitor, the above-mentioned ammonium carboxylate, the above-mentioned EO-PO polymer L42 and the above-mentioned water;
wherein the mass fractions of the components are as described above;
the oxidizing agent, the water-soluble polymer, the organic base, the chelating agent, the corrosion inhibitor and the ammonium carboxylate are the same as described above.
The components of the invention can adopt a subpackage mode, and can be mixed temporarily when in use; it is preferable that the above-mentioned oxidizing agent is separately packaged as component A, the components other than the above-mentioned oxidizing agent are mixed and packaged as component B, and AB is mixed at the time of use.
The invention also provides a cleaning fluid composition.
The present invention also provides a kit comprising, in one or more containers, the oxidizing agent, the oxidized glutathione, the cysteine, the water-soluble polymer, the organic base, the chelating agent, the corrosion inhibitor, the ammonium carboxylate, the EO-PO polymer L42, and the water in one or more containers.
Preferably, the oxidizing agent is separately placed in one of the vessels.
The invention also provides an application of the kit, wherein the application is to clean the microelectronic device with the residues after plasma etching and/or the hard mask material.
The invention also provides a preparation method of the cleaning liquid composition, which comprises the following steps of mixing the components to obtain the cleaning liquid composition.
Wherein, the solid component in the components is preferably added into the liquid component and stirred uniformly.
Wherein the mixing temperature can be room temperature.
The above preferred conditions can be arbitrarily combined to obtain preferred embodiments of the present invention without departing from the common general knowledge in the art.
In the present invention, other reagents and raw materials, except 1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole) and amidoximated diaminomaleonitrile, and water-soluble polymers are commercially available, wherein EO-PO polymer L31, EO-PO polymer L42, EO-PO polymer L62, and EO-PO polymer L81 are purchased from Nantong Kohlai chemical Co., ltd.
The volume of the polymerization system in the invention refers to the volume of acrylamide and amphoteric monomer methacryloyloxyethyl-N, N-dimethyl propane sulfonate dissolved in water.
The room temperature in the present invention means 10 to 30 ℃.
The positive progress effects of the invention are as follows: the cleaning solution composition is used for cleaning the materials with the post-plasma etching residues and/or the hard mask on the microelectronic device, can remove Ti, tiN, taN, tiNxOy hard mask and the hard mask containing the alloy of the Ti, the TiN, the TaN, the TiNxOy hard mask and the hard mask containing the alloy of the TiNxOy hard mask with the post-plasma etching residues and the ashing residues with good cleaning effect. The cleaning solution composition for selectively removing the hard mask has strong corrosion inhibition on various metals and dielectrics and good cleaning effect.
Detailed Description
The invention is further illustrated by the following examples, which are not intended to limit the invention thereto. The experimental methods without specifying specific conditions in the following examples were selected according to the conventional methods and conditions, or according to the commercial instructions.
1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole)
In the comparative example of the invention, 1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole) is prepared by self-made according to example 2 in patent CN 106188103B.
Water-soluble polymers A1 to A5
Comparative example water-soluble polymer A1 in the invention was prepared as per example 1 in patent CN104086702 a;
comparative example water-soluble polymer A2 in the invention was prepared as per example 2 in patent CN104086702 a;
comparative example water-soluble polymer A3 in the invention was prepared as per example 3 in patent CN104086702 a;
comparative example water-soluble polymer A4 in the invention was prepared as per example 4 in patent CN104086702 a;
comparative example water-soluble polymer A5 in the invention was prepared by itself according to example 5 of patent CN 104086702A.
Water-soluble polymers I1 to I6
The water-soluble polymer I1 in the embodiment of the invention is prepared by self-preparation according to the embodiment 1 in the patent CN104086702A, wherein the reaction temperature is only modified from 65 ℃ to 80 ℃;
the water-soluble polymer I2 in the embodiment of the invention is prepared by self-preparation according to the embodiment 3 in the patent CN104086702A, wherein the reaction temperature is only changed from 70 ℃ to 80 ℃;
the water-soluble polymer I3 in the embodiment of the invention is prepared by self-preparation according to the embodiment 2 in the patent CN104086702A, wherein the reaction temperature is only modified from 65 ℃ to 80 ℃;
the water-soluble polymer I4 in the embodiment of the invention is prepared by self-preparation according to the embodiment 5 in the patent CN104086702A, wherein the reaction temperature is only modified from 65 ℃ to 80 ℃;
the water-soluble polymer I5 in the embodiment of the invention is prepared by self-preparation according to the embodiment 1 in the patent CN104086702A, wherein the reaction temperature is only modified from 65 ℃ to 85 ℃;
the water-soluble polymer I6 of the examples of the present invention was prepared by itself by modifying only the reaction temperature from 70 ℃ to 85 ℃ according to example 3 of patent CN 104086702A.
Amidooximated diaminomaleonitriles
Preparing amidoxime-containing diaminomaleonitrile; reacting NH 2 OH, HCl and K 2 CO 3 Dissolving in ethanol water solution to obtain mixed solution, adding diaminomaleonitrile into the mixed solution, heating to 75-95 deg.C under nitrogen protection, reacting for 4-8h, centrifuging after reaction, collecting sample, washing with ethanol and water respectively, and freeze dryingTo obtain amidoximized diamino maleonitrile.
In the following examples, the specific operation temperature is not limited, and all the operations are carried out at room temperature. The room temperature means 10-30 ℃.
The cleaning solution composition of the invention comprises the following components: the kinds and contents of the oxidizing agent, oxidized glutathione, cysteine, water-soluble polymer, organic base, chelating agent, corrosion inhibitor, ammonium carboxylate, EO-PO polymer L42, and deionized water are listed in tables 1 and 2, respectively.
The cleaning solution composition of the present invention and the cleaning solution composition of the comparative example were each a cleaning solution composition obtained by adding a solid component to a liquid component and stirring them uniformly in accordance with the components and contents in tables 1 and 2.
Examples 1 to 16
TABLE 1
TABLE 2
The following comparative examples 1 to 22 are screens of the kinds or contents of components based on example 1.
Comparative example 1
The oxidized glutathione component in example 1 was replaced with reduced glutathione, and the others were unchanged.
Comparative example 2
Oxidized glutathione in example 1 was removed, and the others were unchanged.
Comparative example 3
The cysteine component of example 1 was removed and the others were unchanged.
Comparative example 4
The cysteine component in example 1 was replaced with arginine, and the others were not changed.
Comparative example 5
The cysteine component in example 1 was replaced by histidine, and the others were unchanged.
Comparative example 6
The water-soluble polymer I1 of example 1 was replaced with the water-soluble polymer A1, and the rest was not changed.
Comparative example 7
The water-soluble polymer I1 of example 1 was replaced with the water-soluble polymer A2, and the rest was not changed.
Comparative example 8
The water-soluble polymer I1 of example 1 was replaced with the water-soluble polymer A3, and the rest was not changed.
Comparative example 9
The water-soluble polymer I1 of example 1 was replaced with the water-soluble polymer A4, and the rest was not changed.
Comparative example 10
The water-soluble polymer I1 of example 1 was replaced with the water-soluble polymer A5, and the rest was not changed.
Comparative example 11
The EO-PO polymer L42 of example 1, component, was replaced by the EO-PO polymer L31, the other being unchanged.
Comparative example 12
The EO-PO polymer L42 of example 1, component, was replaced by the EO-PO polymer L62, the other being unchanged.
Comparative example 13
The EO-PO polymer L42 of example 1 was replaced by the EO-PO polymer L81, the other being unchanged.
Comparative example 14
The water-soluble polymer I1 in example 1 was removed, and the rest was not changed.
Comparative example 15
The content of the water-soluble polymer I1 in example 1 was adjusted to 0.005% and the rest was unchanged.
Comparative example 16
The content of oxidized glutathione in example 1 was adjusted to 0.020% and the rest was not changed.
Comparative example 17
The content of the water-soluble polymer I1 in example 1 was adjusted to 0.060% and the rest was not changed.
Comparative example 18
The EO-PO polymer L42 content in example 1 was adjusted to 0.005% and the rest was unchanged.
Comparative example 19
In example 1, 0.70% of passivating agent 1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole) is added, and the rest is unchanged.
Comparative example 20
The EO-PO polymer L42 content in example 1 was adjusted to 0.06%, and the rest was unchanged.
Comparative example 21
In example 1, 2.00% of passivating agent 1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole) by mass fraction is added, and the rest is unchanged.
Comparative example 22
Replacing the composition amidoximated diaminomaleonitrile of example 1 with a mixture of benzotriazole and amidoximated diaminomaleonitrile; the mass percentages of benzotriazole and amidoximated diaminomaleonitrile are respectively 50%, and the others are unchanged.
Effects of the embodiment
1. Etch rate
TABLE 3
TABLE 4
Remarking: "TiN" in the table is PVD (Physical Vapor Deposition) TiN.
In Table 3, the cleaning liquid composition of the present invention has extremely low etching rates on a silicon wafer of AlNxOy, alN, W, cu, LP-TEOS, BD2, siCN and Co, which are all less than
Hardly corroding interconnection materials on the device; cleaning solution compositions not within the scope of the present application have slightly higher etch rates than the above-mentioned materials, all of which are greater than
Can be reached to the maximum
Possibly corroding the interconnect material on the device.
In Table 4, the cleaning solution composition of the present invention has extremely high etching rates of Ti, tiN, taN and TiNxOy on silicon wafers, which are all larger than those of Ti, tiN, taN and TiNxOy
Can be reached to the maximum
The hard mask can be removed quickly; not in this applicationThe etching rate of the cleaning liquid composition in the range is extremely low and the highest is
At the lowest level only have
In combination with tables 3 and 4, the cleaning solution composition of the present invention has high etching selectivity to Ti, tiN, taN and TiNxOy on a silicon wafer, and the selectivity ratio is at least 150% or more relative to the interconnection material on the device in table 3.
2. Cleaning effect
The cleaning effect is divided into four grades: a-no residue was observed; b-very little residue was observed; C-Small residue observed; d-significantly more residue was observed.
The corrosion effect is classified into four grades: good A-compatibility without undercutting; b-there is very slight undercut; c-there is little undercut; d-undercut is more pronounced and severe.
TABLE 5
Therefore, the cleaning solution composition has good cleaning effect on the patterned wafer with the residues after plasma etching and ashing.
Claims (10)
1. Use of a cleaning composition for cleaning a microelectronic device having post-plasma etch residue and/or hardmask material;
the cleaning liquid composition comprises the following components in percentage by mass: oxidant, 0.001-0.010% oxidized glutathione, cysteine, 0.01-0.05% water-soluble polymer, organic base, chelating agent, corrosion inhibitor, ammonium carboxylate, 0.01-0.05% EO-PO polymer L42 and water, the balance being water; the sum of the mass fractions of all the components is 100%;
the corrosion inhibitor is amidoxime diaminomaleonitrile or amidoxime diaminomaleonitrile-tolutriazole mixture;
the water-soluble polymer is prepared by the following preparation method, and the preparation method comprises the following steps:
step (1): adding hydrophobic monomers of methyl styrene and sodium dodecyl sulfate into an aqueous solution of acrylamide and an amphoteric monomer of methacryloyloxyethyl-N, N-dimethyl propane sulfonate to obtain a mixture I;
the molar ratio of the acrylamide to the methacryloyloxyethyl-N, N-dimethylpropanesulfonate is (18-19): 1; the molar ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is (60-240): 1; the adding amount of the sodium dodecyl sulfate is 0.1 mol.L < -1 > relative to the volume of a polymerization system;
step (2): adding an initiator potassium persulfate into the mixture obtained in the step (1) for deoxygenation to obtain a mixture II; the addition amount of potassium persulfate relative to the volume of the polymerization system is 4 mmol.L-1;
and (3): reacting the mixture II obtained in the step (2) at 80-85 ℃ to obtain a water-soluble polymer;
1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole) is not included in the cleaning solution composition;
the mass fraction of each component is the mass percentage of the mass of each component in the cleaning liquid composition in the total mass of all the components.
2. Use of a cleaning solution composition according to claim 1 wherein the microelectronic device is a silicon wafer;
and/or the hard mask material is a Ti-containing material, a TiN-containing material, a TaN-containing material, a TiNxOy-containing material or an alloy containing Ti, tiN, taN and TiNxOy.
3. Use of a cleaning solution composition according to claim 1 wherein said cleaning solution composition satisfies one or more of the following conditions:
(1) The oxidant is one or more of hydrogen peroxide, N-methylmorpholine oxide, benzoyl peroxide, tetrabutylammonium peroxymonosulfate, ozone, ferric chloride, permanganate, perborate, perchlorate, persulfate, ammonium peroxodisulfate, peracetic acid, nitric acid, ammonium chlorite, ammonium chlorate, ammonium iodate, ammonium perborate, ammonium perchlorate, ammonium periodate, ammonium persulfate, tetramethylammonium chlorite, tetramethylammonium chlorate, tetramethylammonium iodate, tetramethylammonium perborate, tetramethylammonium perchlorate, tetramethylammonium periodate, tetramethylammonium persulfate, urea peroxide, and peracetic acid;
(2) The water-soluble polymer is one or more of water-soluble polymer I1, water-soluble polymer I2, water-soluble polymer I3, water-soluble polymer I4, water-soluble polymer I5 and water-soluble polymer I6;
wherein the water-soluble polymer I1 is prepared by the preparation method; in the step (1), the feeding molar ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is 60; in the step (3), the reaction temperature is 80 ℃; preferably, the water-soluble polymer I1 is prepared according to the preparation method in example 1 of patent CN 104086702A; wherein the reaction temperature is adjusted from 65 ℃ to 80 ℃, and other conditions are the same;
wherein the water-soluble polymer I2 is prepared by the preparation method; in the step (1), the feeding molar ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is 140; in the step (3), the reaction temperature is 80 ℃; preferably, the water-soluble polymer I2 is prepared according to the preparation method in the patent CN104086702A, example 3; wherein the reaction temperature is adjusted from 70 ℃ to 80 ℃, and the other conditions are the same;
wherein the water-soluble polymer I3 is prepared by the preparation method; in the step (1), the feeding molar ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is 100; in the step (3), the reaction temperature is 80 ℃; preferably, the water-soluble polymer I3 is prepared according to the preparation method in the embodiment 2 of the patent CN 104086702A; wherein the reaction temperature is adjusted from 65 ℃ to 80 ℃, and other conditions are the same;
wherein the water-soluble polymer I4 is prepared by the preparation method; in the step (1), the feeding molar ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is 240; in the step (3), the reaction temperature is 80 ℃; preferably, the water-soluble polymer I4 is prepared according to the preparation method in the patent CN104086702A, example 5; wherein the reaction temperature is adjusted from 65 ℃ to 80 ℃, and other conditions are the same;
wherein the water-soluble polymer I5 is prepared by the preparation method; in the step (1), the feeding molar ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is 60; in the step (3), the reaction temperature is 80 ℃; preferably, the water-soluble polymer I5 is prepared according to the preparation method in example 1 of patent CN 104086702A; wherein the reaction temperature is adjusted from 65 ℃ to 85 ℃, and other conditions are the same;
wherein the water-soluble polymer I6 is prepared by the preparation method; in the step (1), the feeding molar ratio of the methyl styrene to the methacryloyloxyethyl-N, N-dimethyl propane sulfonate is 140; in the step (3), the reaction temperature is 80 ℃; preferably, the water-soluble polymer I6 is prepared according to the preparation method in the patent CN104086702A, example 3; wherein the reaction temperature is adjusted from 70 ℃ to 85 ℃, and other conditions are the same;
(3) The organic alkali is one or more of tetramethyl ammonium hydroxide, tetrapropyl ammonium hydroxide, tetrabutyl ammonium hydroxide, tetraethyl ammonium hydroxide, benzyl trimethyl ammonium hydroxide, choline, (2-hydroxyethyl) trimethyl ammonium hydroxide, tri (2-hydroxyethyl) methyl ammonium hydroxide, monoethanolamine, diglycolamine, triethanolamine, isobutanolamine, isopropanolamine, tetrabutyl phosphonium hydroxide and tetramethyl guanidine;
(4) The chelating agent is one or more of 1,2-cyclohexanediamine-N, N, N ', N ' -tetraacetic acid, ethylenediamine tetraacetic acid, nitrilotriacetic acid, diethylenetriamine pentaacetic acid, 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetraacetic acid, ethylene glycol tetraacetic acid, 1,2-bis (o-aminophenoxy) ethane-N, N, N ', N ' -tetraacetic acid, N- {2- [ bis (carboxymethyl) amino ] ethyl } -N- (2-hydroxyethyl) glycine, ethylenediamine-N, N ' -bis (2-hydroxyphenylacetic acid), dioxaoctamethylenedinitrilotetraacetic acid and triethylenetetramine hexaacetic acid;
(5) The mass ratio of the amidoxime diaminomaleonitrile to the tolutriazole in the amidoxime diaminomaleonitrile-tolutriazole mixture is 1:1;
(6) The amidoxime-containing diaminomaleonitrile is prepared by the following method, which comprises the following steps:
at K 2 CO 3 In the presence of NH at a temperature of 75-95 DEG C 2 Reacting OH & HCl with diaminomaleonitrile in an ethanol aqueous solution to obtain amidoximated diaminomaleonitrile;
(7) The ammonium carboxylate is one or more of ammonium oxalate, ammonium lactate, ammonium tartrate, triammonium citrate, ammonium acetate, ammonium carbamate, ammonium carbonate, ammonium benzoate, ammonium ethylenediamine tetraacetic acid, diammonium ethylenediamine tetraacetic acid, triammonium ethylenediamine tetraacetic acid, tetraammonium ethylenediamine tetraacetic acid, ammonium succinate, ammonium formate and 1-H-pyrazole-3-ammonium formate;
(8) The water is deionized water;
(9) The mass fraction of the oxidant is 10-30%;
(10) The mass fraction of the oxidized glutathione is 0.005-0.010%;
(11) The mass fraction of the cysteine is 0.001-0.250%;
(12) The mass fraction of the water-soluble polymer is 0.010%, 0.025% or 0.050%;
(13) The mass fraction of the organic alkali is 1.0-5.0%;
(14) The mass fraction of the chelating agent is 0.01-2.00%;
(15) The mass fraction of the corrosion inhibitor is 0.01-2.00%;
(16) The mass fraction of the ammonium carboxylate is 0.5-3.0%;
(17) The mass fraction of the EO-PO polymer L42 is 0.01%, 0.03% or 0.05%;
(18) The cleaning liquid composition does not comprise a passivating agent.
4. Use of a cleaning solution composition according to claim 3 wherein said cleaning solution composition satisfies one or more of the following conditions:
(1) The oxidant is one or more of hydrogen peroxide, carbamide peroxide and peroxyacetic acid;
(2) The organic alkali is one or more of tetramethyl ammonium hydroxide, tetrapropyl ammonium hydroxide, tetrabutyl ammonium hydroxide, tetraethyl ammonium hydroxide and choline;
(3) The chelating agent is 1,2-cyclohexanediamine-N, N, N ', N' -tetraacetic acid and/or ethylenediamine tetraacetic acid;
(4) The ammonium carboxylate is ammonium oxalate and/or triammonium citrate;
(5) The mass fraction of the oxidant is 10%, 15% or 30%;
(6) The mass fraction of the oxidized glutathione is 0.005 percent or 0.010 percent;
(7) The mass fraction of the cysteine is 0.15%, 0.20% or 0.25%;
(8) The mass fraction of the organic base is 1.0%, 2.5% or 5.0%;
(9) The mass fraction of the chelating agent is 0.01%, 1.00% or 2.00%;
(10) The mass fraction of the corrosion inhibitor is 0.01%, 0.50% or 2.00%;
(11) The mass fraction of the ammonium carboxylate is 0.5%, 1.0% or 3.0%.
5. Use of a cleaning solution composition according to claim 4 wherein the cleaning solution composition satisfies one or more of the following conditions:
(1) The oxidant is hydrogen peroxide;
(2) The organic alkali is tetramethyl ammonium hydroxide;
(3) The chelating agent is ethylenediamine tetraacetic acid;
(4) The ammonium carboxylate is ammonium oxalate.
6. The use of a cleaning fluid composition as claimed in claim 1 wherein the oxidizer is present in an amount of 10 to 30% by weight;
the mass fraction of the oxidized glutathione is 0.001-0.010%;
the mass fraction of the cysteine is 0.001-0.250%;
the mass fraction of the water-soluble polymer is 0.01-0.05%;
the mass fraction of the organic base is 1.0-5.0%;
the mass fraction of the chelating agent is 0.01-2.00%;
the mass fraction of the corrosion inhibitor is 0.01-2.00%;
the mass fraction of the ammonium carboxylate is 0.5-3.0%;
the mass fraction of the EO-PO polymer L42 is 0.01-0.05%;
the water is used for complementing the balance;
the oxidant is one or more of hydrogen peroxide, carbamide peroxide and peroxyacetic acid;
the water-soluble polymer is one or more of water-soluble polymers I1, I2, I3, I4, I5 and I6; the water-soluble polymers I1, I2, I3, I4, I5 and I6 are as defined in claim 2;
the organic alkali is tetramethyl ammonium hydroxide and/or choline;
the chelating agent is 1,2-cyclohexanediamine-N, N, N ', N' -tetraacetic acid and/or ethylenediamine tetraacetic acid;
the corrosion inhibitor is amidoxime diaminomaleonitrile or amidoxime diaminomaleonitrile-tolutriazole mixture; the mass ratio of the amidoximated diaminomaleonitrile to the tolutriazole in the amidoximated diaminomaleonitrile-tolutriazole mixture is preferably 1:1;
the ammonium carboxylate is ammonium oxalate and/or triammonium citrate;
the water is deionized water.
7. Use of a cleaning solution composition according to claim 1 wherein the cleaning solution composition is a solution according to scheme 1 or scheme 2:
scheme 1:
in the cleaning liquid composition, the oxidizing agent is hydrogen peroxide; the mass fraction of the hydrogen peroxide is 10-30%;
the mass fraction of the oxidized glutathione is 0.001-0.01%;
the mass fraction of the cysteine is 0.001-0.25%;
the water-soluble polymer is water-soluble polymer I1; the mass fraction of the water-soluble polymer I1 is 0.01-0.05%; the water-soluble polymer I1 is as defined in claim 2;
the organic alkali is tetramethyl ammonium hydroxide; the mass fraction of the tetramethylammonium hydroxide is 1-5%;
the chelating agent is ethylenediamine tetraacetic acid; the mass fraction of the ethylene diamine tetraacetic acid is 0.01-2%;
the corrosion inhibitor is amidoxime diaminomaleonitrile; the mass fraction of the amidoxime-forming diaminomaleonitrile is 0.01-2.00%;
the ammonium carboxylate is ammonium oxalate; the mass fraction of the ammonium oxalate is 0.5-3.0%;
the mass fraction of the EO-PO polymer L42 is 0.01-0.05%;
the water is deionized water; the deionized water is used for complementing the balance;
scheme 2:
in the cleaning liquid composition, the mass fraction of the oxidant is 15%; the oxidant is one or more of hydrogen peroxide, carbamide peroxide and peroxyacetic acid;
the mass fraction of the oxidized glutathione is 0.005 percent;
the mass fraction of the cysteine is 0.25 percent;
the mass fraction of the water-soluble polymer is 0.025%; the water-soluble polymer is one or more of water-soluble polymers I1, I2, I3, I4, I5 and I6; the water-soluble polymers I1, I2, I3, I4, I5 and I6 are as defined in claim 2;
the mass fraction of the organic base is 2.50 percent; the organic alkali is tetramethyl ammonium hydroxide and/or choline;
the mass fraction of the chelating agent is 1.00 percent; the chelating agent is ethylene diamine tetraacetic acid and/or 1,2-cyclohexanediamine-N, N, N ', N' -tetraacetic acid;
the mass fraction of the corrosion inhibitor is 0.50%; the corrosion inhibitor is amidoxime diaminomaleonitrile or amidoxime diaminomaleonitrile-tolutriazole mixture; the mass ratio of the amidoximated diaminomaleonitrile to the tolutriazole in the amidoximated diaminomaleonitrile-tolutriazole mixture is preferably 1:1;
the mass fraction of the ammonium carboxylate is 1.00 percent; the ammonium carboxylate is ammonium oxalate and/or triammonium citrate;
the mass fraction of the EO-PO polymer L42 is 0.05 percent;
the water is used for complementing the balance; the water is deionized water.
8. The use of a cleaning solution composition as claimed in claim 1, wherein the cleaning solution composition is any one of the following components in parts by mass:
combination 1:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I1, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediaminetetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% eo-PO polymer L42 and deionized water, the balance being deionized water;
group 2:10.0% hydrogen peroxide, 0.010% oxidized glutathione, 0.15% cysteine, 0.01% water-soluble polymer I1, 1.00% tetramethylammonium hydroxide, 0.01% ethylenediaminetetraacetic acid, 0.01% amidoximated diaminomaleonitrile, 0.50% ammonium oxalate, 0.01% eo-PO polymer L42 and deionized water, the balance being deionized water;
group 3:30.0% hydrogen peroxide, 0.010% oxidized glutathione, 0.25% cysteine, 0.050% water-soluble polymer I1, 5.0% tetramethylammonium hydroxide, 2.0% ethylenediaminetetraacetic acid, 2.0% amidoximated diaminomaleonitrile, 3.0% ammonium oxalate, 0.03% eo-PO polymer L42 and deionized water, the balance being deionized water;
group 4:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.20% cysteine, 0.025% water-soluble polymer I1, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediaminetetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% eo-PO polymer L42 and deionized water, the balance being deionized water;
group 5:30.0% hydrogen peroxide, 0.010% oxidized glutathione, 0.15% cysteine, 0.025% water-soluble polymer I1, 5.0% tetramethylammonium hydroxide, 2.0% ethylenediaminetetraacetic acid, 2.0% amidoximated diaminomaleonitrile, 3.0% ammonium oxalate, 0.03% EO-PO polymer L42 and deionized water, the balance deionized water;
group 6:15.0% urea peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I1, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediaminetetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% eo-PO polymer L42 and deionized water, the balance being deionized water;
group 7:15.0% of peroxyacetic acid, 0.005% of oxidized glutathione, 0.25% of cysteine, 0.025% of water-soluble polymer I1, 2.50% of tetramethylammonium hydroxide, 1.00% of ethylenediaminetetraacetic acid, 0.50% of amidoximated diaminomaleonitrile, 1.00% of ammonium oxalate, 0.05% of EO-PO polymer L42 and deionized water, the balance being deionized water;
group 8:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I1, 2.50% choline, 1.00% ethylenediaminetetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% eo-PO polymer L42 and deionized water, the balance deionized water;
group 9:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I1, 2.50% tetramethylammonium hydroxide, 1.00%1, 2-cyclohexanediamine-N, N, N ', N' -tetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% EO-PO polymer L42 and deionized water, the balance being made up;
group 10:15.0% of hydrogen peroxide, 0.005% of oxidized glutathione, 0.25% of cysteine, 0.025% of water-soluble polymer I1, 2.50% of tetramethylammonium hydroxide, 1.00% of ethylenediaminetetraacetic acid, 0.50% of a mixture of amidoximated diaminomaleonitrile-tolyltriazole in a mass ratio of 1:1, 1.00% of ammonium oxalate, 0.05% of EO-PO polymer L42 and deionized water, the balance being deionized water;
group 11:15.0% of hydrogen peroxide, 0.005% of oxidized glutathione, 0.25% of cysteine, 0.025% of water-soluble polymer I1, 2.50% of tetramethylammonium hydroxide, 1.00% of ethylenediaminetetraacetic acid, 0.50% of amidoximated diaminomaleonitrile, 1.00% of triammonium citrate, 0.05% of EO-PO polymer L42 and deionized water, the balance being deionized water;
group 12:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I2, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediaminetetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% EO-PO polymer L42 and deionized water, the balance deionized water;
group 13:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I3, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediaminetetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% eo-PO polymer L42 and deionized water, the balance being deionized water;
group 14:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I4, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediaminetetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% eo-PO polymer L42 and deionized water, the balance being deionized water;
group 15:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I5, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediaminetetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% eo-PO polymer L42 and deionized water, the balance deionized water;
group 16:15.0% hydrogen peroxide, 0.005% oxidized glutathione, 0.25% cysteine, 0.025% water-soluble polymer I6, 2.50% tetramethylammonium hydroxide, 1.00% ethylenediaminetetraacetic acid, 0.50% amidoximated diaminomaleonitrile, 1.00% ammonium oxalate, 0.05% eo-PO polymer L42 and deionized water, the balance being deionized water;
in groups 1 to 16, the water-soluble polymers I1, I2, I3, I4, I5 and I6 are as defined in claim 2.
9. Use of a cleaning solution composition according to any one of claims 1 to 8, wherein the cleaning solution composition comprises the following components in parts by mass: said oxidizing agent, said oxidized glutathione, said cysteine, said water soluble polymer, said organic base, said chelating agent, said corrosion inhibitor, said ammonium carboxylate, said EO-PO polymer L42, and said water;
wherein the mass fraction of each component is as defined in any one of claims 1 to 8;
the oxidizing agent, the water-soluble polymer, the organic base, the chelating agent, the corrosion inhibitor and the ammonium carboxylate are as defined in any one of claims 1 to 8.
10. Use of a kit for cleaning a microelectronic device having post-plasma etch residue and/or hardmask material;
the kit comprises in one or more containers an oxidizing agent of any one of claims 1-9, an oxidized glutathione of any one of claims 1-9, a cysteine of any one of claims 1-9, a water soluble macromolecule of any one of claims 1-9, an organic base of any one of claims 1-9, a chelating agent of any one of claims 1-9, a corrosion inhibitor of any one of claims 1-9, an ammonium carboxylate of any one of claims 1-9, an EO-PO polymer L42 of any one of claims 1-9, and water of any one of claims 1-9 in one or more containers.
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