CN113430072A - Cobalt-compatible semi-aqueous cleaning solution for removing hard mask, and preparation method and application thereof - Google Patents

Cobalt-compatible semi-aqueous cleaning solution for removing hard mask, and preparation method and application thereof Download PDF

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CN113430072A
CN113430072A CN202010208598.9A CN202010208598A CN113430072A CN 113430072 A CN113430072 A CN 113430072A CN 202010208598 A CN202010208598 A CN 202010208598A CN 113430072 A CN113430072 A CN 113430072A
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ammonium
water
mass fraction
semi
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CN113430072B (en
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王溯
蒋闯
冯强强
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Shanghai Xinyang Semiconductor Material Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3245—Aminoacids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers

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  • Computer Hardware Design (AREA)
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Abstract

The invention discloses a cobalt-compatible semi-aqueous cleaning solution for removing a hard mask, and a preparation method and application thereof. The semi-aqueous cleaning solution is prepared from the following raw materials in parts by mass: 10-45% of an oxidant, 0-1.5% of D-amino acid oxidase, 0-2.5% of D-type amino acid, 0.1-15% of an organic base, 0.001-15% of a chelating agent, 0.005-15% of a corrosion inhibitor, 0.05-15% of ammonium carboxylate, 0.005-1.5% of EO-PO polymer L42, 0.005-2.5% of a passivating agent, 20-60% of a water-soluble organic solvent and the balance of water, wherein the mass fraction is the percentage of the mass of each component in the total mass of each component. The semi-water-based cleaning solution disclosed by the invention has strong corrosion inhibition on various metals and dielectrics, especially has strong compatibility on cobalt, and has a good cleaning effect.

Description

Cobalt-compatible semi-aqueous cleaning solution for removing hard mask, and preparation method and application thereof
Technical Field
The invention relates to a cobalt-compatible semi-aqueous cleaning solution for removing a hard mask, and a preparation method and application thereof.
Background
In the chip manufacturing technology, the cleaning solution for residues after copper interconnection plasma etching is mainly fluorine-containing cleaning solution. With the continuous advance of technology nodes, more and more materials are introduced, such as metal materials of titanium, tungsten, titanium nitride, and the like, and low-k dielectric materials, and the compatibility of the conventional fluorine-containing cleaning solution with various materials is challenged.
Plasma dry etching is commonly used to fabricate vertical sidewall trenches and anisotropic interconnect vias in a copper (Cu)/low dielectric constant dual damascene fabrication process. As technology nodes evolve to 45nm and smaller (e.g., 28-14 nm), the shrinking of semiconductor device dimensions makes it more challenging to achieve precise profile control of vias and trenches. Integrated circuit device companies are investigating the use of various hard masks to improve etch selectivity to low dielectric constant materials for better profile control. The hardmask material (e.g., Ti/TiN) needs to be removed after etching protection, and other metal and dielectric materials need to be protected, especially cobalt compatibility protection, during the cleaning process for removing the hardmask material, thereby challenging compatibility of conventional fluorine-containing cleaning solutions with a variety of materials.
Developing cobalt-compatible cleaning solutions for selectively removing hard masks has become an urgent problem in the art.
Disclosure of Invention
The invention provides a cobalt compatible semi-aqueous cleaning solution for removing a hard mask, a preparation method and application thereof, aiming at overcoming the defects of poor compatibility and corrosion inhibition performance of the existing cleaning solution for removing the hard mask material on other metals and dielectric materials, poor cleaning effect and the like. The semi-water-based cleaning solution disclosed by the invention has strong corrosion inhibition on various metals and dielectrics and good cleaning effect.
The present invention solves the above technical problems by the following technical solutions.
The invention provides a semi-aqueous cleaning solution which is prepared from the following raw materials in parts by mass:
10-45% of an oxidant, 0-1.5% of D-amino acid oxidase, 0-2.5% of D-type amino acid, 0.1-15% of an organic base, 0.001-15% of a chelating agent, 0.005-15% of a corrosion inhibitor, 0.05-15% of ammonium carboxylate, 0.005-1.5% of EO-PO polymer L42, 0.005-2.5% of a passivating agent, 20-60% of a water-soluble organic solvent and the balance of water, wherein the mass fraction is the percentage of the mass of each component in the total mass of each component.
In the semi-aqueous cleaning solution, the oxidizing agent can be an oxidizing agent conventionally used in the art, such as hydrogen peroxide (H)2O2) N-methylmorpholine oxide (NMMO or NMO), benzoyl peroxide, tetrabutylammonium peroxymonosulfate, ozone, ferric chloride, permanganate, perborate, perchlorate, persulfate, ammonium peroxodisulfate, peracetic acid, urea peroxide, nitric acid (HNO)3) Ammonium chlorite (NH)4ClO2) Ammonium chlorate (NH)4ClO3) Ammonium iodate (NH)4IO3) Ammonium perborate (NH)4BO3) Ammonium perchlorate (NH)4ClO4) Ammonium periodate (NH)4IO3) Ammonium persulfate ((NH)4)2S2O8) Tetramethylammonium chlorite ((N (CH)3)4)ClO2) Tetramethylammonium chlorate ((N (CH)3)4)ClO3) Tetramethylammonium iodate ((N (CH)3)4)IO3) Tetramethylammonium perborate ((N (CH)3)4)BO3) Tetramethylammonium perchlorate ((N (CH)3)4)ClO4) Tetramethylammonium periodate ((N (CH)3)4)IO4) Tetramethylammonium persulfate ((N (CH)3)4)S2O8) Urea peroxide ((CO (NH)2)2)H2O2) And peroxyacetic acid (CH)3(CO) OOH), again for example one or more of hydrogen peroxide, carbamide peroxide and peracetic acid.
In the semi-aqueous cleaning solution, the mass fraction of the oxidant may be 10% to 35%, for example, 10% to 30% (e.g., 10%, 15%, 30%), and the mass fraction is the percentage of the mass of the oxidant to the total mass of the raw materials.
In the hemihydrate cleaning solution, the mass fraction of the D-amino acid oxidase may be 0 to 0.5%, for example, 0 to 0.01% (for example, 0, 0.005%, 0.01%), and further, for example, 0.005% to 0.5% (for example, 0.005%, 0.01%), the mass fraction being a percentage of the mass of the D-amino acid oxidase to the total mass of the raw material.
In the semi-aqueous cleaning solution, the D-form amino acid may be one or more of D-amino acids conventionally used in the art, such as D-glycine, D-alanine, D-valine, D-leucine, D-isoleucine, D-phenylalanine, D-proline, D-tryptophan, D-serine, D-tyrosine, D-cysteine, D-methionine, D-asparagine, D-glutamine, D-threonine, D-aspartic acid, D-glutamic acid, D-lysine, D-arginine and D-histidine, and further such as one or more of D-proline, D-arginine and D-histidine.
In the semi-aqueous cleaning solution, the mass fraction of the D-type amino acid may be 0 to 1.5%, for example, 0 to 0.5% (e.g., 0, 0.25%, 0.5%), and further, for example, 0.1 to 1.5% (e.g., 0.25%, 0.5%), where the mass fraction is the percentage of the mass of the D-type amino acid to the total mass of the raw materials.
In the semi-aqueous based cleaning solution, the organic base may be one or more of organic bases conventionally used in the art, such as tetramethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetraethylammonium hydroxide (TEAH), benzyltrimethylammonium hydroxide (BTAH), choline, (2-hydroxyethyl) trimethylammonium hydroxide, tris (2-hydroxyethyl) methylammonium hydroxide, Monoethanolamine (MEA), Diglycolamine (DGA), Triethanolamine (TEA), isobutanol amine, isopropanolamine, tetrabutylphosphonium hydroxide (TBPH), and tetramethylguanidine, and further, for example, tetramethylammonium hydroxide and/or choline.
In the semi-aqueous cleaning solution, the mass fraction of the organic base may be 1% to 10%, for example, 3% to 8% (for example, 3%, 5%, 8%), and the mass fraction is the percentage of the mass of the organic base in the total mass of the raw materials.
In the semi-aqueous cleaning solution, the chelating agent may be one or more chelating agents conventionally used in the art, such as 1, 2-cyclohexanediamine-N, N, N ', N ' -tetraacetic acid (CDTA), ethylenediaminetetraacetic acid, nitrilotriacetic acid, diethylenetriaminepentaacetic acid, 1,4,7, 10-tetraazacyclododecane-1, 4,7, 10-tetraacetic acid, ethyleneglycol tetraacetic acid (EGTA), 1, 2-bis (o-aminophenoxy) ethane-N, N, N ', N ' -tetraacetic acid, N- {2- [ bis (carboxymethyl) amino ] ethyl } -N- (2-hydroxyethyl) glycine (HEDTA), ethylenediamine-N, N ' -bis (2-hydroxyphenylacetic acid) (EDDHA), dioxaoctamethylenediazepinetetraacetic acid (DOCTA), and triethylenetetraminehexaacetic acid (TTHA), for example, ethylenediaminetetraacetic acid and/or 1, 2-cyclohexanediamine-N, N, N ', N' -tetraacetic acid.
In the semi-aqueous cleaning solution, the mass fraction of the chelating agent can be 0.005% -5%, such as 0.01% -2% (such as 0.01%, 1%, 2%), and the mass fraction is the percentage of the mass of the chelating agent in the total mass of the raw materials.
In the semi-aqueous cleaning solution, the corrosion inhibitor may be any one conventionally used in the art, for example, Benzotriazole (BTA), tolyltriazole, 5-phenyl-benzotriazole, 5-nitro-benzotriazole, 3-amino-5-mercapto-1, 2, 4-triazole, 1-amino-1, 2, 4-triazole, hydroxybenzotriazole, 2- (5-amino-pentyl) -benzotriazole, 1-amino-1, 2, 3-triazole, 1-amino-5-methyl-1, 2, 3-triazole, 3-amino-1, 2, 4-triazole, 3-mercapto-1, 2, 4-triazole, 3-isopropyl-1, 2, 4-triazole, 5-benzenethiol-benzotriazole, halo-benzotriazole (halogen is F, Cl, Br or I), naphthotriazole, 2-Mercaptobenzimidazole (MBI), 2-mercaptobenzothiazole, 4-methyl-2-phenylimidazole, 2-mercaptothiazoline, 5-aminotetrazole monohydrate, 5-amino-1, 3, 4-thiadiazole-2-thiol, 2, 4-diamino-6-methyl-1, 3, 5-triazine, thiazole, triazine, methyltetrazole, 1, 3-dimethyl-2-imidazolidinone, 1, 5-pentamethylenetetrazole, 1-phenyl-5-mercaptotetrazole, diaminomethyltriazine, dimethylthiazoline, 1-5-mercaptotetrazole, diaminomethyltriazine, dimethylthiazoline, mercaptotetrazole, dimethylthiazoline, mercaptotetrazole, dimethylthiazoline, dimethyline, dimethylthiazoline, and dimethylthiazoline, dimethyline, dimethylthiazoline, and dimethylthiazoline, mercaptotetrazole, dimethylthiazoline, and dimethyline, dimethylthiazoline, dimethyline, and dimethylthiazoline, dimethyline, dimethylthiazoline, dimethyline, dimethylthiazoline, dimethyline, One or more of imidazolinethiones, mercaptobenzimidazoles, 4-methyl-4H-1, 2, 4-triazole-3-thiol, 5-amino-1, 3, 4-thiadiazole-2-thiol, and benzothiazoles, further examples being benzotriazoles and/or tolutriazole.
In the semi-aqueous cleaning solution, the mass fraction of the corrosion inhibitor can be 0.005% -5%, such as 0.01% -2% (such as 0.01%, 0.5%, 2%), and the mass fraction is the mass percentage of the corrosion inhibitor in the total mass of the raw materials.
In the semi-aqueous cleaning solution, the ammonium carboxylate can be ammonium carboxylate conventionally used in the field, such as one or more of ammonium oxalate, ammonium lactate, ammonium tartrate, triammonium citrate, ammonium acetate, ammonium carbamate, ammonium carbonate, ammonium benzoate, ammonium ethylenediaminetetraacetate, diammonium ethylenediaminetetraacetate, triammonium ethylenediaminetetraacetate, ammonium succinate, ammonium formate and 1-H-pyrazole-3-ammonium formate, and further such as ammonium oxalate and/or triammonium citrate.
In the semi-aqueous cleaning solution, the mass fraction of the ammonium carboxylate may be 0.1% to 6%, for example, 0.5% to 3% (for example, 0.5%, 1%, 3%), and the mass fraction is a percentage of the mass of the ammonium carboxylate to the total mass of the raw materials.
In the semi-aqueous cleaning solution, the mass fraction of the EO-PO polymer L42 can be 0.005% -1.2%, such as 0.01% -1% (such as 0.01%, 0.05%, 1%), and the mass fraction is the mass percentage of the EO-PO polymer L42 to the total mass of the raw materials.
In the invention, the EO-PO polymer is polyoxyethylene polyoxypropylene block polymer.
In the semi-aqueous cleaning solution, the passivating agent can be a passivating agent conventionally used in the field, for example, 1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole), and the preparation method of the 1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole) is conventional in the field.
In the semi-aqueous cleaning solution, the mass fraction of the passivating agent can be 0.005% -2%, for example 0.01% -2% (for example 0.01%, 0.7%, 2%), and the mass fraction is the percentage of the passivating agent in the total mass of the raw materials.
In the semi-aqueous cleaning solution, the water-soluble organic solvent may be a water-soluble organic solvent conventionally used in the art, such as methanol, ethanol, isopropanol, butanol and higher alcohols (e.g., C2-C4 diol and C2-C4 triol), tetrahydrofurfuryl alcohol (THFA), halogenated alcohols (e.g., 3-chloro-1, 2-propanediol, 3-chloro-1-propanethiol, 1-chloro-2-propanol, 2-chloro-1-propanol, 3-bromo-1, 2-propanediol, 1-bromo-2-propanol, 3-bromo-1-propanol, 3-iodo-1-propanol, 4-chloro-1-butanol, 2-chloroethanol), Acetic acid, propionic acid, trifluoroacetic acid, Tetrahydrofuran (THF), N-methylpyrrolidone (NMP), cyclohexylpyrrolidone, N-octylpyrrolidone, N-phenylpyrrolidone, methyldiethanolamine, methyl formate, Dimethylformamide (DMF), dimethyl sulfoxide (DMSO), tetramethylene sulfone (sulfolane), diethyl ether, phenoxy-2-propanol (PPh), ethyl lactate, acetonitrile, acetone, ethylene glycol, Propylene Glycol (PG), 1, 3-propanediol, 1, 4-propanediol, dioxane, dipropylene glycol, diethylene glycol monomethyl ether, triethylene glycol monomethyl ether, diethylene glycol monoethyl ether, triethylene glycol diethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monobutyl ether (i.e., butyl carbitol), triethylene glycol monobutyl ether, ethylene glycol monohexyl ether, diethylene glycol monohexyl ether, Ethylene glycol phenyl ether, propylene glycol methyl ether, dipropylene glycol methyl ether (DPGME), tripropylene glycol methyl ether (TPGME), dipropylene glycol dimethyl ether, dipropylene glycol ethyl ether, propylene glycol N-propyl ether, dipropylene glycol N-propyl ether (DPGPE), tripropylene glycol N-propyl ether, propylene glycol N-butyl ether, dipropylene glycol N-butyl ether, tripropylene glycol N-butyl ether, propylene glycol phenyl ether, dipropylene glycol methyl ether acetate, tetraethylene glycol dimethyl ether (TEGDE), glycerol carbonate, N-formylmorpholine and triethyl phosphate, for example, dipropylene glycol methyl ether and/or diethylene glycol monomethyl ether.
In the semi-aqueous cleaning solution, the mass fraction of the water-soluble organic solvent may be 25% to 55%, for example, 30% to 50% (e.g., 30%, 40%, 50%), and the mass fraction is the percentage of the mass of the water-soluble organic solvent in the total mass of the raw materials.
In the semi-aqueous cleaning solution, the water can be one or more of deionized water, pure water and ultrapure water, and is preferably ionized water.
In certain preferred embodiments of the present invention, the semi-aqueous cleaning solution is prepared from the following raw materials, wherein the raw materials comprise the following components in percentage by mass: 10-35% of an oxidant, 0-0.5% of D-amino acid oxidase, 0-1.5% of D-type amino acid, 1-10% of an organic base, 0.005-5% of a chelating agent, 0.005-5% of a corrosion inhibitor, 0.1-6% of ammonium carboxylate, 0.005-1.2% of EO-PO polymer L42, 0.005-2% of a passivating agent, 25-55% of a water-soluble organic solvent and the balance of water, wherein the mass fraction is the percentage of the mass of each component in the total mass of each component.
In certain preferred embodiments of the present invention, the semi-aqueous cleaning solution is prepared from the following raw materials, wherein the raw materials comprise the following components in percentage by mass: 10-30% of oxidant, 0-0.01% of D-amino acid oxidase, 0-0.5% of D-type amino acid, 3-8% of organic base, 0.01-2% of chelating agent, 0.01-2% of corrosion inhibitor, 0.5-3% of ammonium carboxylate, 0.01-1% of EO-PO polymer L42, 0.01-2% of passivator, 30-50% of water-soluble organic solvent and the balance of water, wherein the mass fraction is the percentage of the mass of each component in the total mass of each component.
In certain preferred embodiments of the present invention, the semi-aqueous cleaning solution is prepared from the following raw materials, wherein the raw materials comprise the following components in percentage by mass: 10 to 30 percent of oxidant, 0.005 to 0.5 percent (such as 0.005 to 0.01 percent) of D-amino acid oxidase, 0.1 to 1.5 percent (such as 0.25 to 0.5 percent) of D-type amino acid, 3 to 8 percent of organic base, 0.01 to 2 percent of chelating agent, 0.01 to 2 percent of corrosion inhibitor, 0.5 to 3 percent of ammonium carboxylate, 0.01 to 1 percent of EO-PO polymer L42, 0.01 to 2 percent of passivator, 30 to 50 percent of water-soluble organic solvent and the balance of water, wherein the mass fraction is the percentage of the mass of each component in the total mass of each component.
In certain preferred embodiments of the present invention, the semi-aqueous cleaning solution is prepared from the following raw materials, wherein the raw materials comprise the following components in percentage by mass: 10-35% of an oxidant, 0-0.5% of D-amino acid oxidase, 0-1.5% of D-type amino acid, 1-10% of an organic base, 0.005-5% of a chelating agent, 0.005-5% of a corrosion inhibitor, 0.1-6% of ammonium carboxylate, 0.005-1.2% of EO-PO polymer L42, 0.005-2% of a passivating agent, 25-55% of a water-soluble organic solvent and the balance of water, wherein the mass fraction is the percentage of the mass of each component in the total mass of each component.
In certain preferred embodiments of the present invention, the semi-aqueous cleaning solution is prepared from the following raw materials, wherein the raw materials comprise the following components in percentage by mass: the composition comprises, by mass, 0-0.5% of a D-type amino acid, 3-8% of an organic base, 0.01-2% of a chelating agent, 0.01-2% of a corrosion inhibitor, 0.5-3% of ammonium carboxylate, 0.01-1% of an EO-PO polymer L42, 0.01-2% of a passivating agent, 30-50% of a water-soluble organic solvent and the balance of water, wherein the mass fraction is the percentage of the mass of each component in the total mass of the components.
In certain preferred embodiments of the present invention, the semi-aqueous cleaning solution is prepared from the following raw materials, wherein the raw materials comprise the following components in percentage by mass: 10 to 30 percent of oxidant, 0.005 to 0.5 percent (such as 0.005 to 0.01 percent) of D-amino acid oxidase, 0.1 to 1.5 percent (such as 0.25 to 0.5 percent) of D-type amino acid, 3 to 8 percent of organic base, 0.01 to 2 percent of chelating agent, 0.01 to 2 percent of corrosion inhibitor, 0.5 to 3 percent of ammonium carboxylate, 0.01 to 1 percent of EO-PO polymer L42, 0.01 to 2 percent of passivator, 30 to 50 percent of water-soluble organic solvent and the balance of water, wherein the mass fraction is the percentage of the mass of each component in the total mass of each component.
The invention also provides a preparation method of the semi-water-based cleaning solution, which comprises the following steps: and mixing the raw materials to obtain the semi-aqueous cleaning solution.
Wherein, the solid component in the raw material components is preferably added into the liquid component and stirred uniformly.
Wherein the temperature of the mixing may be room temperature.
The invention also provides application of the semi-water-based cleaning solution in a cleaning process of a semiconductor device.
Wherein the semiconductor device is plasma etched, the semiconductor device comprises a hard mask material, such as titanium nitride (TiN), tantalum nitride (TaN), and titanium oxynitride (TiN)xOy) And titanium (Ti).
The temperature for cleaning in the cleaning process may be a temperature conventionally used in the art, for example, 40 ℃ to 60 ℃ (e.g., 50 ℃). The cleaning time in the cleaning process can be 5min to 30min (for example, 20 min).
In the present invention, "room temperature" means 10 to 40 ℃ unless otherwise specified.
The above preferred conditions can be arbitrarily combined to obtain preferred embodiments of the present invention without departing from the common general knowledge in the art.
The reagents and starting materials used in the present invention are commercially available.
The positive progress effects of the invention are as follows: the semi-aqueous cleaning solution can be used for selectively removing a hard mask and other residues from a wet process cleaning process of an Integrated Circuit (IC), and more particularly can be used for selectively removing TiN, TaN, TiNxOy, Ti hard mask and hard masks containing alloys of the materials and other residues from a chip or a wafer containing low-dielectric-constant dielectric materials, TEOS, copper, cobalt and other low-dielectric-constant dielectric materials.
Detailed Description
The invention is further illustrated by the following examples, which are not intended to limit the scope of the invention. The experimental methods without specifying specific conditions in the following examples were selected according to the conventional methods and conditions, or according to the commercial instructions.
Abbreviations referred to in the examples are as follows:
TMAH: tetramethyl ammonium hydroxide;
a BTA: benzotriazole;
CDTA: 1, 2-cyclohexanediamine-N, N' -tetraacetic acid;
f: 1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole), wherein the 1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole);
DPGME: dipropylene glycol methyl ether;
AlNxOy: aluminum oxynitride;
AlN: aluminum nitride;
w: tungsten;
cu: copper;
LP-TEOS: low pressure deposition of ethyl orthosilicate;
BD 2: low-k dielectric materials commonly used in the art, under the trade name BLACK DIAMOND (BD 2);
SiCN: silicon carbon nitrogen;
co: cobalt;
ti: titanium;
TiN: titanium nitride, the TiN of the invention is PVD TiN, wherein PVD refers to (Physical Vapor Deposition);
TaN: tantalum nitride;
TiNxOy: titanium oxynitride.
The EO-PO products in the examples were obtained from Nantong Koilai chemical Co.
The D-amino acid oxidases in the examples were all available from Shanghai Aladdin Biotechnology Ltd.
In examples, 1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole) and the method for producing 1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole) are shown as F in the following examples with reference to CN 106188103B.
Examples 1 to 14
Raw material components of the semi-aqueous cleaning solution are as follows: the types and contents of the oxidant, the D-amino acid oxidase, the D-amino acid, the organic base, the chelating agent, the corrosion inhibitor, the ammonium carboxylate, the EO-PO polymer L42, the passivating agent and the water-soluble organic solvent are listed in Table 1, the balance is made up of water, and the water in the cleaning composition is deionized water.
In the following examples, the preparation method of the semi-aqueous cleaning solution is to add the solid components in the raw material components in the examples into the liquid components and stir the mixture evenly.
In the following examples, the specific operation temperature is not limited, and all the operations are carried out at room temperature.
TABLE 1 kinds and mass fractions of raw material components of the semi-aqueous cleaning solution
Figure RE-GDA0002515369260000091
Figure RE-GDA0002515369260000101
Figure RE-GDA0002515369260000111
Figure RE-GDA0002515369260000121
Figure RE-GDA0002515369260000131
Figure RE-GDA0002515369260000141
Application example 1
(1) Etch Rate determination
Etching rate of a sample to be detected: dummy wafers of a single material, such as aluminum, copper, titanium nitride, tungsten, cobalt, dielectric materials (low-k or high-k), etc., are deposited on a silicon wafer.
Etching experiment: statically dipping a sample to be detected in a semi-water-based cleaning solution for 30min at 50 ℃, cleaning with deionized water and drying with nitrogen.
Method for measuring etch rate (A/min): the thickness of the sample before and after etching was measured, respectively, with a metal sample being measured for thickness using a four-point probe apparatus (createst-e of Napson, japan) and a non-metal sample being measured for thickness using an optical film thickness measuring apparatus (filmmetrics F20, usa).
The etching effect is divided into four grades: good A-compatibility without undercutting; b-there is very slight undercut; c-there is little undercut; d-undercut is more pronounced and severe.
(2) Measurement of cleaning Effect
Cleaning effect to detect samples: patterned wafers with post plasma etch and post ash residues with pattern features (metal lines, vias via, metal pads pad, trench, etc.).
The cleaning effect experiment method comprises the following steps: the sample is statically immersed in a semi-water-based cleaning solution for 20min at 50 ℃, then cleaned by deionized water and dried by nitrogen. The cleaning and corrosion effects were observed by electron microscope SEM.
The cleaning effect is divided into four grades: a-no residue was observed; b-very little residue was observed; C-Small residue observed; d-significantly more residue was observed.
The etching rates of the semi-aqueous based cleaning liquids of examples 1 to 14 and comparative examples 1 to 10 are shown in Table 2, and the etching effects and cleaning effects are shown in Table 3.
TABLE 2
Figure RE-GDA0002515369260000151
Figure RE-GDA0002515369260000161
Figure RE-GDA0002515369260000171
TABLE 3
Figure RE-GDA0002515369260000172
Figure RE-GDA0002515369260000181
As can be seen from tables 2 and 3, the semi-aqueous cleaning solution of the present invention was applied to AlNxOy、AlN、W、Cu、 LP-TEOS、BD2、SiCN、Co、Ti、TiN、TaN、TiNxOyThe corrosion inhibitor has lower etching rate, which shows that the corrosion inhibitor has better corrosion inhibition performance and good cobalt compatibility; and after the patterned wafer with the through hole characteristic and the patterned wafer with the metal wire characteristic are cleaned by the semi-aqueous cleaning solution, almost no undercut phenomenon is observed, which shows that the semi-aqueous cleaning solution has good compatibility with various metals and dielectrics. In addition, after the patterned wafer with the through hole characteristic and the patterned wafer with the metal wire characteristic are cleaned by the semi-aqueous cleaning solution, almost no residue is observed, and the cleaning effect is good.
The semi-aqueous cleaning solution or the p-AlN cleaning solution of comparative examples 1 to 10, as compared with examples 1 to 14xOyAlN, W, Cu, LP-TEOS, BD2, SiCN and the like, and has poor corrosion inhibition performance, or Ti, TiN, TaN and TiNxOyWhen the etching rate is obviously reduced, the hard mask material cannot be effectively removed, the etching rate of Co is obviously improved, and the compatibility of Co is poor. It can be seen that the semi-aqueous cleaning solutions of comparative examples 1-10 did not achieve selective removal of hardmask materials and had poor compatibility with other metals (especially Co) and dielectric materials. Also, after the patterned wafer having the via hole feature and the patterned wafer having the metal line feature were cleaned with the semi-aqueous based cleaning solutions of comparative examples 1 to 10, a severe undercut phenomenon occurred with more residue.

Claims (10)

1. The semi-aqueous cleaning solution is characterized by being prepared from the following raw materials in parts by mass:
10-45% of an oxidant, 0-1.5% of D-amino acid oxidase, 0-2.5% of D-type amino acid, 0.1-15% of an organic base, 0.001-15% of a chelating agent, 0.005-15% of a corrosion inhibitor, 0.05-15% of ammonium carboxylate, 0.005-1.5% of EO-PO polymer L42, 0.005-2.5% of a passivating agent, 20-60% of a water-soluble organic solvent and the balance of water, wherein the mass fraction is the percentage of the mass of each component in the total mass of each component.
2. The semi-aqueous cleaning solution of claim 1 wherein the oxidizing agent is one or more of hydrogen peroxide, n-methylmorpholine oxide, benzoyl peroxide, tetrabutylammonium peroxymonosulfate, ozone, ferric chloride, permanganate, perborate, perchlorate, persulfate, ammonium peroxodisulfate, peracetic acid, urea peroxide, nitric acid, ammonium chlorite, ammonium chlorate, ammonium iodate, ammonium perborate, ammonium perchlorate, ammonium periodate, ammonium persulfate, tetramethylammonium chlorite, tetramethylammonium chlorate, tetramethylammonium iodate, tetramethylammonium perborate, tetramethylammonium perchlorate, tetramethylammonium periodate, tetramethylammonium persulfate, urea peroxide, and peracetic acid;
and/or the mass fraction of the oxidant is 10-35%;
and/or, the mass fraction of the D-amino acid oxidase is 0-0.5%;
and/or the D-type amino acid is one or more of D-glycine, D-alanine, D-valine, D-leucine, D-isoleucine, D-phenylalanine, D-proline, D-tryptophan, D-serine, D-tyrosine, D-cysteine, D-methionine, D-asparagine, D-glutamine, D-threonine, D-aspartic acid, D-glutamic acid, D-lysine, D-arginine and D-histidine;
and/or the mass fraction of the D-type amino acid is 0-1.5%;
and/or the organic base is one or more of tetramethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetraethylammonium hydroxide, benzyltrimethylammonium hydroxide, choline, (2-hydroxyethyl) trimethylammonium hydroxide, tris (2-hydroxyethyl) methylammonium hydroxide, monoethanolamine, diglycolamine, triethanolamine, isobutanolamine, isopropanolamine, tetrabutylphosphonium hydroxide and tetramethylguanidine;
and/or the mass fraction of the organic base is 1-10%;
and/or the chelating agent is one or more of 1, 2-cyclohexanediamine-N, N, N ', N ' -tetraacetic acid, ethylenediaminetetraacetic acid, nitrilotriacetic acid, diethylenetriaminepentaacetic acid, 1,4,7, 10-tetraazacyclododecane-1, 4,7, 10-tetraacetic acid, ethyleneglycol tetraacetic acid, 1, 2-bis (o-aminophenoxy) ethane-N, N, N ', N ' -tetraacetic acid, N- {2- [ bis (carboxymethyl) amino ] ethyl } -N- (2-hydroxyethyl) glycine, ethylenediamine-N, N ' -bis (2-hydroxyphenylacetic acid), dioxaoctamethylenediazepine tetraacetic acid, and triethylenetetramine hexaacetic acid;
and/or the mass fraction of the chelating agent is 0.005-5%;
and/or the corrosion inhibitor is benzotriazole, tolyltriazole, 5-phenyl-benzotriazole, 5-nitro-benzotriazole, 3-amino-5-mercapto-1, 2, 4-triazole, 1-amino-1, 2, 4-triazole, hydroxybenzotriazole, 2- (5-amino-pentyl) -benzotriazole, 1-amino-1, 2, 3-triazole, 1-amino-5-methyl-1, 2, 3-triazole, 3-amino-1, 2, 4-triazole, 3-mercapto-1, 2, 4-triazole, 3-isopropyl-1, 2, 4-triazole, 5-benzenethiol-benzotriazole, halo-benzotriazole, or a salt thereof, Naphthotriazole, 2-mercaptobenzimidazole, 2-mercaptobenzothiazole, 4-methyl-2-phenylimidazole, 2-mercaptothiazoline, 5-aminotetrazole monohydrate, 5-amino-1, 3, 4-thiadiazole-2-thiol, 2, 4-diamino-6-methyl-1, 3, 5-triazine, thiazole, triazine, methyltetrazole, 1, 3-dimethyl-2-imidazolidinone, 1, 5-pentamethylenetetrazole, 1-phenyl-5-mercaptotetrazole, diaminomethyltriazine, imidazolidinethione, mercaptobenzimidazole, 4-methyl-4H-1, 2, 4-triazole-3-thiol, thiohydrabamine, thiobenzoguanamine, thioamine, thiobenzoguanamine, 2-methyl-4H-1, 2, 4-triazole-3-thiol, thioamine, thio, One or more of 5-amino-1, 3, 4-thiadiazole-2-thiol and benzothiazole;
and/or the mass fraction of the corrosion inhibitor is 0.005-5%;
and/or the ammonium carboxylate is one or more of ammonium oxalate, ammonium lactate, ammonium tartrate, triammonium citrate, ammonium acetate, ammonium carbamate, ammonium carbonate, ammonium benzoate, ammonium ethylenediaminetetraacetic acid, diammonium ethylenediaminetetraacetic acid, triammonium ethylenediaminetetraacetic acid, tetraammonium ethylenediaminetetraacetic acid, ammonium succinate, ammonium formate and 1-H-pyrazole-3-ammonium formate;
and/or the mass fraction of the ammonium carboxylate is 0.1-6%;
and/or the mass fraction of the EO-PO polymer L42 is 0.005-1.2%;
and/or the passivating agent is 1- (benzotriazole-1-methyl) -1- (2-methylbenzimidazole);
and/or the mass fraction of the passivating agent is 0.005% -2%;
and/or the water-soluble organic solvent is methanol, ethanol, isopropanol, butanol and higher alcohol, tetrahydrofurfuryl alcohol, halogenated alcohol, acetic acid, propionic acid, trifluoroacetic acid, tetrahydrofuran, N-methylpyrrolidone, cyclohexylpyrrolidone, N-octylpyrrolidone, N-phenylpyrrolidone, methyldiethanolamine, methyl formate, dimethylformamide, dimethyl sulfoxide, tetramethylene sulfone, diethyl ether, phenoxy-2-propanol, ethyl lactate, acetonitrile, acetone, ethylene glycol, propylene glycol, 1, 3-propanediol, 1, 4-propanediol, dioxane, dipropylene glycol, diethylene glycol monomethyl ether, triethylene glycol monomethyl ether, diethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, triethylene glycol monobutyl ether, methyl formate, dimethylformamide, dimethyl sulfoxide, tetramethylene sulfone, diethyl ether, ethyl ether, phenoxy-2-propanol, ethyl lactate, acetonitrile, acetone, ethylene glycol, propylene glycol, 1, 3-propanediol, 1, One or more of ethylene glycol monohexyl ether, diethylene glycol monohexyl ether, ethylene glycol phenyl ether, propylene glycol methyl ether, dipropylene glycol methyl ether, tripropylene glycol methyl ether, dipropylene glycol dimethyl ether, dipropylene glycol ethyl ether, propylene glycol N-propyl ether, dipropylene glycol N-propyl ether, tripropylene glycol N-propyl ether, propylene glycol N-butyl ether, dipropylene glycol N-butyl ether, tripropylene glycol N-butyl ether, propylene glycol phenyl ether, dipropylene glycol methyl ether acetate, tetraethylene glycol dimethyl ether, glycerol carbonate, N-formylmorpholine and triethyl phosphate;
and/or the mass fraction of the water-soluble organic solvent is 25-55%;
and/or the water is one or more of deionized water, pure water and ultrapure water.
3. The semi-aqueous cleaning solution of claim 2 wherein the oxidizing agent is one or more of hydrogen peroxide, carbamide peroxide and peroxyacetic acid;
and/or the mass fraction of the oxidant is 10-30%;
and/or, the mass fraction of the D-amino acid oxidase is 0-0.01%;
and/or, the mass fraction of the D-amino acid oxidase is 0.005% -0.5%;
and/or the D-type amino acid is one or more of D-proline, D-arginine and D-histidine;
and/or the mass fraction of the D-type amino acid is 0-0.5%;
and/or the mass fraction of the D-type amino acid is 0.1-1.5%;
and/or the organic base is tetramethyl ammonium hydroxide and/or choline;
and/or the mass fraction of the organic base is 3-8%;
and/or the chelating agent is ethylenediamine tetraacetic acid and/or 1, 2-cyclohexanediamine-N, N, N ', N' -tetraacetic acid;
and/or the mass fraction of the chelating agent is 0.01-2%;
and/or the corrosion inhibitor is benzotriazole and/or tolyltriazole;
and/or the mass fraction of the corrosion inhibitor is 0.01-2%;
and/or the ammonium carboxylate is ammonium oxalate and/or triammonium citrate;
and/or the mass fraction of the ammonium carboxylate is 0.5-3%;
and/or the mass fraction of the EO-PO polymer L42 is 0.01-1%;
and/or the mass fraction of the passivating agent is 0.01-2%;
and/or the water-soluble organic solvent is dipropylene glycol methyl ether and/or diethylene glycol monomethyl ether;
and/or in the water-soluble organic solvent, the halogenated alcohol is one or more of 3-chloro-1, 2-propanediol, 3-chloro-1-propanethiol, 1-chloro-2-propanol, 2-chloro-1-propanol, 3-bromo-1, 2-propanediol, 1-bromo-2-propanol, 3-bromo-1-propanol, 3-iodo-1-propanol, 4-chloro-1-butanol and 2-chloroethanol;
and/or the mass fraction of the water-soluble organic solvent is 30-50%;
and/or the water is ionized water.
4. The semi-aqueous cleaning solution as claimed in claim 1, wherein the semi-aqueous cleaning solution is prepared from the following raw materials in percentage by mass: 10-35% of an oxidant, 0-0.5% of D-amino acid oxidase, 0-1.5% of D-type amino acid, 1-10% of an organic base, 0.005-5% of a chelating agent, 0.005-5% of a corrosion inhibitor, 0.1-6% of ammonium carboxylate, 0.005-1.2% of EO-PO polymer L42, 0.005-2% of a passivating agent, 25-55% of a water-soluble organic solvent and the balance of water, wherein the mass fraction is the percentage of the mass of each component in the total mass of each component.
5. The semi-aqueous cleaning solution as claimed in claim 4, wherein the semi-aqueous cleaning solution is prepared from the following raw materials in percentage by mass: 10-30% of oxidant, 0-0.01% of D-amino acid oxidase, 0-0.5% of D-type amino acid, 3-8% of organic base, 0.01-2% of chelating agent, 0.01-2% of corrosion inhibitor, 0.5-3% of ammonium carboxylate, 0.01-1% of EO-PO polymer L42, 0.01-2% of passivator, 30-50% of water-soluble organic solvent and the balance of water, wherein the mass fraction is the percentage of the mass of each component in the total mass of each component;
or the semi-aqueous cleaning solution is prepared from the following raw materials in parts by mass: 10-30% of an oxidant, 0.005-0.5% of D-amino acid oxidase, 0.1-1.5% of D-type amino acid, 3-8% of organic base, 0.01-2% of a chelating agent, 0.01-2% of a corrosion inhibitor, 0.5-3% of ammonium carboxylate, 0.01-1% of EO-PO polymer L42, 0.01-2% of a passivating agent, 30-50% of a water-soluble organic solvent and the balance of water, wherein the mass fraction is the percentage of the mass of each component in the total mass of each component.
6. The semi-aqueous cleaning solution as claimed in claim 1, wherein the semi-aqueous cleaning solution is prepared from the following raw materials in parts by mass: 10-35% of an oxidant, 0-0.5% of D-amino acid oxidase, 0-1.5% of D-type amino acid, 1-10% of an organic base, 0.005-5% of a chelating agent, 0.005-5% of a corrosion inhibitor, 0.1-6% of ammonium carboxylate, 0.005-1.2% of EO-PO polymer L42, 0.005-2% of a passivating agent, 25-55% of a water-soluble organic solvent and the balance of water, wherein the mass fraction is the percentage of the mass of each component in the total mass of each component.
7. The semi-aqueous cleaning solution as claimed in claim 6, wherein the semi-aqueous cleaning solution is prepared from the following raw materials in parts by mass: the composition comprises, by mass, 0-0.5% of a D-type amino acid, 3-8% of an organic base, 0.01-2% of a chelating agent, 0.01-2% of a corrosion inhibitor, 0.5-3% of ammonium carboxylate, 0.01-1% of an EO-PO polymer L42, 0.01-2% of a passivating agent, 30-50% of a water-soluble organic solvent and the balance of water, wherein the mass fraction is the percentage of the mass of each component in the total mass of the components;
or the semi-aqueous cleaning solution is prepared from the following raw materials in parts by mass: 10-30% of an oxidant, 0.005-0.5% of D-amino acid oxidase, 0.1-1.5% of D-type amino acid, 3-8% of organic base, 0.01-2% of a chelating agent, 0.01-2% of a corrosion inhibitor, 0.5-3% of ammonium carboxylate, 0.01-1% of EO-PO polymer L42, 0.01-2% of a passivating agent, 30-50% of a water-soluble organic solvent and the balance of water, wherein the mass fraction is the percentage of the mass of each component in the total mass of each component.
8. A preparation method of the semi-aqueous cleaning solution as claimed in any one of claims 1 to 7, characterized by comprising the following steps: and mixing the raw materials to obtain the semi-aqueous cleaning solution.
9. Use of a semi-aqueous cleaning solution according to any one of claims 1 to 7 in a cleaning process for a semiconductor device.
10. The use of a semi-aqueous cleaning solution according to claim 9 in a process for cleaning a semiconductor device, wherein the semiconductor device is plasma etched;
and/or the semiconductor device contains a hard mask material, wherein the hard mask material is one or more of titanium nitride, tantalum nitride, titanium oxynitride and titanium;
and/or the cleaning temperature in the cleaning process is 40-60 ℃;
and/or the cleaning time in the cleaning process is 5min-30 min.
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