CN115699304A - 用于传输(tx)路径中的高功率处理滤波器的带有薄膜散热器(tf-hs)层的先进集成无源器件(ipd) - Google Patents
用于传输(tx)路径中的高功率处理滤波器的带有薄膜散热器(tf-hs)层的先进集成无源器件(ipd) Download PDFInfo
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Abstract
描述了一种半导体封装件。该半导体封装件包括无源衬底和无源衬底上的第一层间介电(ILD)层中的第一集成无源器件(IPD)。半导体封装件还包括在第一ILD层上的第二ILD层。该半导体封装件进一步包括在第二ILD层上的第三ILD层中的第二IPD。该半导体封装件还包括在第二IPD的电感元件上的热缓解结构。
Description
相关申请的交叉引用
本申请要求2020年6月10日提交的题为“用于传输(TX)路径中的高功率处理滤波器的带有薄膜散热器(TF-HS)层的先进集成无源器件(IPD)”的美国专利申请第16/898,096号的优先权,该专利申请的公开内容通过引用的方式全文并入本文。
技术领域
本公开的各方面涉及集成电路,更具体而言,涉及用于在无线通信器件的传输(TX)路径中实现高功率处理射频(RF)滤波器的具有薄膜散热器(TF-HS)层的先进集成无源器件(IPD)。
背景技术
三维(3D)封装件可包括堆叠的两个或多个芯片(例如,集成电路(IC)),以占据更少的占地空间和/或具有更大的连接性。对于使用管芯堆叠的高端芯片来说,散热越来越成问题。特别是,堆叠两个或更多芯片可能导致局部热热点。由于局部热点嵌入在堆叠中,这可能降低冷却热点并实现低结温的能力。用于实现低结温的常规冷却解决方案包括散热片、散热器和/或改进的印刷电路板。简单增加散热器和/或散热片的大小的常规技术在小型因子器件(例如,智能手机)中是不切实际的。
复杂片上系统(SOC)的设计可能受通信增强的影响,诸如第五代(5G)新无线电(NR)技术。例如,为了支持5G NR通信,指定了更多数目的通信频带。支持这些附加的通信频段需要在更小的封装件大小中塞入附加的器件,从而导致更高的结温。不幸的是,为了支持5G NR通信而设计的复杂SOC的性能可能会受到高结温的不利影响。
发明内容
描述了一种半导体封装件。该半导体封装件包括无源衬底和无源衬底上的第一层间介电(ILD)层中的第一集成无源器件(IPD)。半导体封装件还包括在第一ILD层上的第二ILD层。该半导体封装件进一步包括在第二ILD层上的第三ILD层中的第二IPD。该半导体封装件还包括在第二IPD的电感元件上的热缓解结构。
描述了一种用于制造半导体封装件中的热缓解结构的方法。该方法包括在无源衬底上的第一层间介电(ILD)层中形成第一集成无源器件(IPD)。该方法还包括在第一ILD层上沉积第二ILD层。该方法进一步包括在第二ILD层上的第三ILD层中形成第二IPD。该方法进一步包括在第二IPD的电感元件上沉积薄膜散热器(TF-HS)层。
描述了一种半导体封装件。该半导体封装件包括无源衬底和无源衬底上的第一层间介电(ILD)层中的第一集成无源器件(IPD)。半导体封装件还包括在第一ILD层上的第二ILD层。该半导体封装件进一步包括在第二ILD层上的第三ILD层中的第二IPD。该半导体封装件进一步包括用于从第二IPD的电感元件散热的部件。
这相当宽泛地概述了本公开的特征和技术优势,以便可以更好地理解下面的详细描述。下面将描述本公开的附加特征和优势。本领域技术人员应理解,本公开可容易地用作修改或设计用于实现本公开的相同目的的其他结构的基础。本领域的技术人员还应理解,这类等同的构造并不背离如所附权利要求中阐述的本公开的教导。当结合附图考虑时,从以下描述中将更好地理解被认为是本公开的特征的新颖特征,无论是关于其组织和操作方法,还是关于进一步的目的和优势。然而,应清楚地理解,每个附图仅仅是出于说明和描述的目的而提供的,并且不旨在作为对本公开的限制的定义。
附图说明
为了更全面地理解本公开,现结合附图参考以下说明。
图1图示了根据本公开的某些方面的片上系统(SoC)的示例实施方式,该片上系统(SoC)包括具有薄膜散热器(TF-HS)层的先进集成无源器件(IPD)。
图2示出了图示包括图1的片上系统(SoC)的堆叠式集成电路 (IC)封装件内的热流路径的横截面图。
图3示出了图示根据本公开的一个方面的说明并入无线器件中的图2的堆叠式集成电路(IC)封装件的横截面图。
图4是根据本公开的各方面的具有薄膜散热器(TF-HS)层的集成电路(IC)封装件的横截面图。
图5是根据本公开的各方面的具有薄膜散热器(TF-HS)层的集成电路(IC)封装件的横截面图。
图6是根据本公开的各方面的包括具有薄膜散热器(TF-HS)层的图5的集成电路(IC)封装件的射频(RF)芯片的横截面图
图7是图示根据本公开的一个方面的用于制造半导体封装件中的热缓解结构的方法的工艺流程图。
图8是示出其中可以有利地采用本公开的配置的示例性无线通信系统的框图。
图9是根据一种配置的说明用于半导体组件的电路、布局和逻辑设计的设计工作站的框图。
具体实施方式
下文结合附图所阐述的详细说明旨在描述各种配置,而非旨在表示可在其中实践所描述概念的唯一配置。详细描述包括具体细节,目的是提供对各种概念的透彻理解。然而,对于本领域技术人员来说显而易见的是,这些概念可在没有这些具体细节的情况下实践。在一些情况下,为了避免混淆这些概念,公知的结构和组件以框图形式示出。
如上所述,术语“和/或(and/or)”的使用旨在表示“包括性或(inclusive OR)”,术语“或(or)”的使用旨在表示“排他性或(exclusive OR)”。如所描述的,贯穿本说明书使用的术语“示例性”意指“用作示例、实例或说明”,并且不应被解释为比其他示例性配置更优选或更有优势。如上所述,贯穿本说明书使用的术语“耦合(coupled)”意指“连接,无论是直接连接还是通过中间连接(例如,开关)、电、机械或其他方式间接连接”,而不一定限于物理连接。此外,连接可使得对象被永久地连接或可释放地连接。这些连接可通过交换机实现。如上所述,贯穿本说明书使用的术语“接近(proximate)”意指“邻近、非常接近、紧邻或靠近”。如上所述,贯穿本说明书使用的术语“在……上”在一些配置中表示“直接在……上”,在其他配置中表示“间接在……上”。
对于使用管芯堆叠的高端芯片,诸如复杂的片上系统(SoC)封装件,散热越来越成为问题。特别是,堆叠两个或更多个芯片可能导致局部热热点。由于局部热热点嵌入在堆叠中,这可能会降低冷却热点并实现低结温的能力。用于实现低结温的常规冷却解决方案包括散热片、散热器和/或改进的印刷电路板。增加散热器和/或散热片大小的常规的技术在小型因子器件(例如,智能手机)中是不切实际的。
复杂SoC封装件的设计可能受到通信增强的影响,诸如5G NR 技术。例如,为了支持5G NR通信,指定了更多数目的通信频带。支持这些附加的通信频段需要在更小的封装件大小中塞入附加的器件,从而导致更高的结温。不幸的是,设计用于支持5G NR通信的复杂SoC封装件的性能可能会受到高结温的不利影响。
这些SoC封装件可以包括用以支持5G NR通信的射频(RF)集成无源器件(IPD)、氮化铝(AlN)声学谐振器/滤波器以及RF微型机电系统(MEMS)开关。实际上,玻璃是实现这些RF器件的理想衬底材料,因为与半导体(例如硅)衬底相比,玻璃实现了低插入损耗。不幸的是,玻璃表现出低热导率的固有缺点(例如,约1.9 W/Ko-m相对于硅为150W/Ko-m)。
由于不良散热,玻璃的低热导电率限制了基于建立在玻璃衬底上的RF集成器件的应用而无法处理高功率。当热点位于RF集成器件 (例如,在发射(TX)路径中使用的RF滤波器)内时,这是不期望的。在操作中,玻璃衬底不能适当散热以降低局部热点温度。因此,在RF集成器件中使用玻璃衬底降低了器件的热可靠性,并且可能最终导致封装件失效。
先前公开的方面用氧化铝陶瓷衬底取代玻璃。在实践中,氧化铝陶瓷衬底表现出低损耗角正切,同时提供高热导率(例如,比玻璃衬底高30倍)。导热率较高的氧化铝衬底可为处理高功率的RF器件提供更好的散热。不幸的是,热量可能仍然被低导热的层间介电(ILD) 层(例如,聚酰亚胺(PI)、聚苯并恶唑((PBO)或苯并环丁烯(BCB)) 所捕获。
本公开的各个方面提供了一种具有薄膜散热器(TF-HS)层的先进集成无源器件(IPD)。用于制造具有TF-HS层的先进IPD的工艺流程可包括晶圆级工艺(WLP)技术。应理解,除非另有说明,否则术语“层(layer)”包括膜,并且不应解释为指示竖直或水平厚度。如上所述,术语“衬底(substrate)”可以指已切块晶圆的衬底,或者可以指未切块晶圆的衬底。如上所述,术语“层压体(laminate)”可以指能够封装件IC器件的多层板。术语“衬底”、“晶圆”和“层压体”可互换使用。类似地,术语“芯片(chip)”和“管芯(die)”可互换使用。
本公开的各方面描述了用于先进IPD的热缓解结构。在本公开的各方面中,TF-HS层被涂覆在包括RF集成器件的RF封装件的加热电感元件上(或下面)。TF-HS层可显著降低在衬底材料(例如,硅、玻璃、氧化铝或其他类似衬底材料)上构建的集成电感器-电容器(LC) 无源器件中生成的温度。在一种配置中,TF-HS层涂覆在连接到晶圆级工艺(WLP)球的上后道制程(BEOL)金属层中的热电感器上。
图1图示了根据本公开的各方面的的主机片上系统(SoC)100 的示例实施方式,该主机SoC100包括具有薄膜散热器(TF-HS)层的先进集成无源器件(IPD)。主机SoC 100包括为特定功能定制的处理块,诸如连接性块110。连接性块110可以包括第五代(5G)新无线电(NR)连接性、第四代长期演进(4G LTE)连接性、Wi-Fi 连接性、USB连接性、连接性、安全数字(SD)连接性等。
在该配置中,主机SoC 100包括支持多线程操作的各种处理单元。对于图1所示的配置,主机SoC 100包括多核中央处理单元(CPU) 102、图形处理器单元(GPU)104、数字信号处理器(DSP)106和神经处理器单元(NPU)108。主机SoC 100还以可包括传感器处理器114、图像信号处理器(ISP)116、导航模块120(其可包括全球定位系统)和存储器118。多核CPU102、GPU 104、DSP 106、NPU 108和多媒体引擎112支持各种功能,诸如视频、音频、图形、游戏、人工网络等。多核CPU 102的每个处理器核可以是精简指令集计算机 (RISC)机器、高级RISC机器(ARM)、微处理器或一些其他类型的处理器。NPU 108可基于ARM指令集。
图2示出了图示图1的SoC 100的堆叠式集成电路(IC)封装件 200内的主热流的横截面图。代表性地,堆叠式IC封装件200包括用互连件212连接到封装件衬底210的印刷电路板(PCB)202。在该配置中,封装件衬底210包括导电层214和216。封装件衬底210上方是3D芯片堆叠220,其包括由模制化合物211包封的堆叠式管芯222、224和230。在本公开的一个方面,管芯230是图1的SoC,包括例如具有堆叠式输入/输出(I/O)管芯222和224的RF封装件。如由箭头208所指示,热量从3D芯片堆叠220中的有源器件向上 (208-1)和向下(208-2)耗散。如图2所示,主热流路径由向下的箭头208-2指示,而次热流路径由向上的箭头208-1指示。
图3示出了图示根据本公开的一个方面的并入无线器件300中的图2的堆叠式IC封装件200的横断面图。如上所述,无线器件300 可包括但不限于智能手机、平板电脑、手持器件或被配置用于5G NR 通信的其他有限形状因子设备。代表性地,堆叠式IC封装件200被放置在包括显示器306的手机壳(phone case)304内。在该配置中,薄膜散热器(TF-HS)层(未示出)被集成到堆叠式IC封装件200 中。如由箭头308所指示,热量从3D芯片堆叠220中的有源器件向上和向下耗散。也就是说,热量从3D芯片堆叠220内的有源器件向上(例如,308-1)和向下(例如,308-2)耗散。在该配置中,TF-HS 层提供由箭头308-1所指示的向上的热流路径,以补充如由箭头308-2 所指示的向下的热流路径。
本发明的各方面针对例如如图4-6所示的RF封装件中的集成无源器件上的TF-HS层。尽管参考RF封装件进行了描述,但是应认识到,TF-HS层可以被并入到其中期望改进热分布的任何芯片封装件中。
图4是根据本公开的各方面的具有薄膜散热器(TF-HS)层的集成电路(IC)封装件400的横截面图。在该配置中,IC封装件400 包括无源衬底402(例如,硅、玻璃、氧化铝或其他类似的衬底材料)。 IC封装件400还包括在无源衬底402的表面上的第一TF-HS层410 (例如,氮化铝(AlN)、氮化硅(SiNx)、化学气相沉积(CVD金刚石或碳化硅(SiC))。IC封装件400进一步包括无源衬底402上的第一后道制程(BEOL)金属化层M1(例如,铜(Cu)、铝或其他类似的导电材料)中的第一集成无源器件(IPD)420。根据本公开的各方面,IC封装件400可以是高功率有源管芯,诸如服务器管芯、射频(RF)管芯、移动台调制解调器或其他类似的高功率放大器有源器件。
无源衬底402的设计通常针对常规散热路径406所示的向下散热进行优化,这将提高结温,从而导致性能下降。如上所述,无源衬底 402可由选自硅、玻璃、氧化铝和氧化铝陶瓷中的一者的材料构成。根据本公开的各方面,TF-HS层在无源衬底402的表面上以及无源衬底402上的BEOL层内的放置产生散热路径408。TF-HS层可由选自氮化铝(AlN)、氮化硅(SiNx)、化学气相沉积(CVD金刚石)和碳化硅(SiC)中的一者的材料构成,以实现散热路径408。这些散热路径408相对于常规散热路径406处于相反的方向。
在该配置中,第一IPD 420由无源衬底402表面上的金属-绝缘体-金属(MIM)电容器构成。第一IPD 420可包括作为第一终端的第一 BEOL金属化层M1、金属化层M1上的介电层(例如,氮化硅(SiNx)、氧化钽(Ta205)等)以及作为第二终端的介电层422上的厚金属(TM)。在该示例中,金属化层M1被固定到第一TF-HS层410,并且在第一 TF-HS层410的表面上的第一层间介电(ILD)层(ILD-1)内。此外,第二BEOL金属化层M2耦合到第一IPD 420的第二终端。第二金属化层M2在第一ILD层(ILD-1)上的第二ILD层(ILD-2)内。
如图4进一步所示,IC封装件400包括由金属化布线层形成的第二IPD 440。在该配置中,第二IPD 440是电感器,包括通过通孔V2 堆叠在第二金属化层430上的第三BEOL金属化层M3。在本公开的各方面,第二TF-HS层450被涂覆在第二IPD 440的加热电感元件上 (或下面)。在该配置中,第二TF-HS层450被涂覆在第三BEOL 金属化层M3上,该第三BEOL金属化层M3经由通孔焊盘(VP)耦合到封装球480(例如,晶圆级工艺(WLP)球)。第二TF-HS层 450在金属化层M3的侧壁和部分表面上,并且在通孔焊盘VP的侧壁上。通孔焊盘VP在金属化堆叠460上,该金属化堆叠460包括第二金属化通孔V2上的金属化层M3、第一金属化通孔V1上的第二金属化层M2以及第一金属化层M1。
第一TF-HS层410和第二TF-HS层450可显著降低IC封装件400 的集成电感-电容(LC)无源器件中生成的温度。第一TF-HS层410 和第二TF-HS层450提供热缓解结构,以使得能够形成建立在各种衬底材料(例如,硅、玻璃、氧化铝或其他类似衬底材料)上的第一IPD420和第二IPD 440。尽管在IC封装件400的不同层上示出第一IPD 420和第二IPD 440,但是应当认识到,第一IPD 420和第二IPD 440 可形成在相同的层间介电(ILD)层或不同的ILD层中,如图4所示。可以进一步改进IC封装件400的散热结构,如图5所示
图5为根据本公开的各方面的具有薄膜散热器(TF-HS)层的集成电路(IC)封装件500的横截面图。在该配置中,IC封装件500 还包括无源衬底402,在无源衬底402的表面上具有第一TF-HS层410。IC封装件500进一步包括第一IPD 420,其具有作为金属-绝缘体-金属(MIM)电容器板的第一金属化层M1。根据本公开的各方面, IC封装件500可为高功率有源管芯,诸如服务器管芯、射频(RF) 管芯、移动台调制解调器或其他类似的高功率有源器件。IC封装件 500进一步包括在第一层间介电(ILD)层(ILD-1)与第二ILD层 (ILD-2)之间的第三TF-HS层470。第二ILD层(ILD-2)表面上的第三TF-HS层470改进了图4所示的散热路径408。
第一ILD层(ILD-1)、第二ILD层(ILD-2)和第三ILD层(ILD-3) 可以由低导热ILD材料构成。例如,低导热ILD材料可为聚酰亚胺 (PI)、聚苯并恶唑(PBO)、苯并环丁烯(BCB)或其他类似的低导热ILD材料的层。在操作中,由于低导热ILD材料,热量可能保持被IC封装件500的ILD层(例如,ILD-1、ILD-2和IDL-3)所捕获。在本公开的各方面,第二TF-HS层450和第三TF-HS层470改进了IC封装件500的ILD层(例如,ILD-1、ILD-2和IDL-3)所捕获的热量的耗散。
如图5进一步所示,IC封装件500包括第二IPD 440的电感器,其由通过通孔V2堆叠在第二金属化层430上的第三金属化层M3构成。第二TF-HS层450也被涂覆在第二IPD 440的加热电感元件上。在该配置中,第二TF-HS层450被涂覆在经由通孔焊盘VP耦合到封装球480的第三金属化层M3上。通孔焊盘VP也在金属化堆叠460 上。
图6是根据本公开的各方面的包括图5的具有薄膜散热器 (TF-HS)层的IC封装件500的射频(RF)芯片600的横截面图。在该配置中,IC封装件500被包封在IC封装件500与层压衬底490 之间的模制化合物404(MC)(包括模制化合物底部填料405)中,以形成RF芯片600。模制化合物404可以是沉积在层压衬底490和 IC封装件500的表面上的填充的环氧树脂(例如,G311Q-L),其中模制化合物底部填料405在封装球480之间,该封装球480耦合到IC封装件500到层压衬底490的焊盘492。如图6所示,由第一TF-HS 层410、第二TF-HS层450和第三TF-HS层470提供的终端导电结构改进了所捕获热量的耗散。例如,由模制化合物404、无源衬底402、层间介电(ILD)层(例如,ILD-1、ILD-2和ILD-3)和模制化合物底部填料405生成的热量通过RF芯片600的导热结构来耗散。
图7是图示根据本公开的一个方面的用于制造半导体封装件中的热缓解结构的方法的工艺流程图。方法700开始于框702,其中在无源衬底上的第一层间介电(ILD)层中形成第一集成无源器件(IPD)。例如,如图4所示,第一IPD 420由无源衬底402的表面上的金属-绝缘体-金属(MIM)电容器构成。第一IPD 420包括作为第一终端的金属化层M1、金属化层M1上的介电层422以及作为第二终端的介电层422上的厚金属TM。在框704,第二ILD层沉积在第一ILD层上。例如,如图4所示,第二ILD层(ILD-2)被沉积在第一ILD层 (ILD-1)上。
在框706,在第二ILD层(ILD-2)上的第三ILD层(ILD-3)中形成第二IPD。例如,如图4所示,IC封装件400包括由金属化布线层形成的第二IPD 440。在该配置中,第二IPD 440是电感器,包括经由通孔V2堆叠在第二金属化层430上的第三后道制程(BEOL) 金属化层M3。在框708,薄膜散热器(TF-HS)层沉积在第二IPD的电感元件上。例如,在图4中,第二TF-HS层450被涂覆在第二IPD 440的加热电感元件上(或下面)。在该配置中,第二TF-HS层450 被涂覆在经由通孔焊盘VP耦合到封装球480的第三BEOL金属化层 M3上。方法700可进一步包括在无源衬底上沉积第一TF-HS层。方法700可进一步包括在第一ILD层和在第二ILD层的金属化布线层上沉积第二TF-HS层,如图4所示。
本公开的各方面针对一种具有薄膜散热器(TF-HS)层以提供用于半导体封装件热缓解结构的先进集成无源器件(IPD)。提出这种热缓解结构来改进热问题,以增加用于部署在无线通信器件的发射 (TX)路径中的宽带滤波器的IPD的功率处理。在一种配置中,TF-HS层(例如,氮化铝(AlN)、氮化硅(SiNx)、化学气相沉积(CVD 金刚石或碳化硅(SiC))等)沉积在集成无源电感器的加热电感厚金属(TM)上。此外,第一和第二层间介电(ILD)层(例如,图4-6的ILD-1和ILD-2)之间以及第二和第三ILD层(例如,图4-6 的ILD-2和ILD-3)之间的导热绝缘层(AlN、SiNx、CVD金刚石或 SiC)可有效地涂覆在连接到半导体封装件的WLP球的上部金属化层 (例如,M3)上的热电感器上。
根据本公开的各方面,TF-HS材料(例如,AlN、SiC、CVD金刚石等)具有期望的导热性和期望的电绝缘性(例如,低RF损耗)。氮化铝(AlN)的使用由于其较低的工艺温度而对热缓解结构的TF-HS 层具有潜在的优势。在一种配置中,在ILD层(例如,聚酰亚胺(PI)) 的表面上的氮化铝涂层的物理气相沉积(PVD)可涉及改进粘附性的表面的等离子体蚀刻(例如,氩(Ar))。在另一种配置中,氮化硅 (SiNx)的等离子体增强化学气相沉积(PECVD)是用于在IPD的加热电感厚金属(TM)上涂覆的潜在候选物。
根据本公开的另外方面,描述了一种集成电路(IC)半导体封装件。在一种配置中,IC半导体封装件具有用于从第二IPD的电感元件散热的部件。在一种配置中,散热部件可以是第二TF-HS层450,如图4-6所示。在另一方面,前述部件可以是被配置成执行前述部件所所列举的功能的任何结构或任何材料。
图8是示出其中可有利地采用本公开的一个方面的示例性无线通信系统800的框图。出于图示的目的,图8示出了三个远程单元820、 830和850,以及两个基站840。应当认识到,无线通信系统可以具有更多的远程单元和基站。远程单元820、830和850包括IC设备825A、 825B和825C,它们包括所公开的TF-HS层。应认识到,其他设备也可包括所公开的TF-HS层,诸如基站、交换设备和网络设备。图8 示出了从基站840到远程单元820、830和850的前向链路信号880,以及从远程单元820、830和850到基站840的反向链路信号890。
在图8中,远程单元820被示为移动电话,远程单元830被示为便携式计算机,并且远程单元850被示为无线本地环路系统中的固定位置远程单元。例如,远程单元可为移动电话、手持式个人通信系统 (PCS)单元、便携式数据单元,诸如个人数据助理、启用GPS的设备、导航设备、机顶盒、音乐播放器、视频播放器、娱乐单元、固定位置数据单元,诸如仪表读取设备,或者存储或检索数据或计算机指令的其他设备,或者它们的组合。尽管图8图示了根据本公开的方面的远程单元,但是本公开不限于这些示例性说明的单元。本公开的各方面可以适用于包括所公开的TF-HS层的许多设备。
图9是图示用于半导体组件的电路、布局和逻辑设计(诸如上文所公开的电容器)的设计工作站的框图。设计工作站900包括硬盘 901,硬盘901包括操作系统软件、支持文件和设计软件,诸如Cadence 或OrCAD。设计工作站900还包括显示器902,以便于包括TF-HS层的电路910或RF组件912的设计。提供存储介质904,用于有形地存储电路910或RF组件912(例如,包括薄膜散热器层)的设计。电路910或RF组件912的设计可按诸如GDSII或GERBER的文件格式存储在存储介质904上。存储介质904可为CD-ROM、DVD、硬盘、闪存或其他合适的设备。此外,设计工作站900包括用于接受来自存储介质904的输入或向存储介质904写入输出的驱动装置903。
记录在存储介质904上的数据可指定逻辑电路配置、用于光刻掩模的图案数据、或用于诸如电子束光刻等串行写入工具的掩模图案数据。该数据可以进一步包括与逻辑模拟相关联的逻辑验证数据,诸如时序图或网络电路。通过减少用于设计半导体晶圆的工艺数目,在存储介质904上提供数据有助于电路910或RF组件912的设计。
对于固件和/或软件实施方式,方法论可用执行所描述的功能的模块(例如,程序、功能等)来实施。有形地包含指令的机器可读介质可用于实施所描述的方法论。例如,软件代码可存储在存储器中并由处理器单元执行。存储器可在处理器单元内或处理器单元外部实施。如所使用的,术语“存储器”是指长期、短期、易失性、非易失性或其他类型的存储器,并且不限于特定类型的存储器或数量的存储器、或其上存储存储器的介质类型。
如果以固件和/或软件实施,则功能可作为一个或多个指令或代码存储在计算机可读介质上。示例包括用数据结构编码的计算机可读介质和用计算机程序编码的计算机可读介质。计算机可读介质包括物理计算机存储介质。存储介质可以是可由计算机访问的可用介质。作为示例而非限制,这类计算机可读介质可包括RAM、ROM、EEPROM、 CD-ROM或其他光盘存储器、磁盘存储器或其他磁存储设备,或者可用于以指令或数据结构的形式存储期望的程序代码并可由计算机访问的其他介质。所使用的盘(disk)和碟(disc)包括压缩光盘(CD)、激光光盘、光盘、数字多功能光盘(DVD)、软盘和蓝光光盘,其中磁盘通常磁性地再现数据,而光盘用激光光学地再现数据。上述各项的组合也应包括在计算机可读介质的范围内。
除了存储在计算机可读介质上之外,指令和/或数据可以作为信号在包括在通信装置中的传输介质上提供。例如,通信装置可包括具有指示指令和数据的信号的收发器。指令和数据被配置为使一个或多个处理器实施权利要求中概述的功能。
尽管已对本公开及其优势进行了详细描述,但应理解,在不脱离所附权利要求书所定义的本公开技术的情况下,可进行各种变化、替代和变更。例如,诸如“上方(above)”和“下方(below)”的关系术语是相对于衬底或电子器件使用的。当然,如果衬底或电子器件被倒置,则上方变成下方,反之亦然。此外,如果侧向定向,则上方和下方可指衬底或电子器件的侧面。此外,本申请的范围不旨在限于说明书中描述的过程、机器、制造、物质组成、部件、方法和步骤的特定配置。如本领域普通技术人员从本公开将容易理解的,根据本公开,可利用现有的或以后将开发的执行与所描述的对应配置基本相同的功能或实现基本相同的结果的过程、机器、制造、物质组成、部件、方法或步骤。因此,所附权利要求旨在将这些过程、机器、制造、物质组成、部件、方法或步骤包括在其范围内。
本领域技术人员将进一步理解,结合本公开描述的各种说明性逻辑块、模块、电路和算法步骤可被实施为电子硬件、计算机软件或两者的组合。为了清楚地说明硬件和软件的这种可互换性,各种说明性的组件、块、模块、电路和步骤在上面总体上依据它们的功能性已经进行了描述。这类功能性是以硬件实施还是以软件实施,这取决于对整个系统施加的特定应用程序和设计约束。本领域技术人员可针对每个特定的应用以不同的方式实施所描述的功能性,但是这类实施方式决定不应被解释为导致脱离本公开的范围。
结合本公开描述的各种说明性逻辑块、模块和电路可利用通用处理器、数字信号处理器(DSP)、专用集成电路(ASIC)、现场可编程门阵列(FPGA)或其他可编程逻辑装置、分立门或晶体管逻辑、分立硬件组件或其设计用于执行所描述功能的任何组合来实施或执行。通用处理器可为微处理器,但是备选地,该处理器可为任何常规的处理器、控制器、微控制器或状态机。处理器也可被实施为计算设备的组合,例如DSP和微处理器的组合、多个微处理器、一个或多个结合DSP内核的微处理器,或者任何其他这类配置。
结合本公开描述的方法或算法的步骤可直接体现在硬件中、体现在由处理器执行的软件模块中、或者体现在这两者的组合中。软件模块可驻留在RAM、闪存、ROM、EPROM、EEPROM、寄存器、硬盘、可移动磁盘、CD-ROM或本领域已知的任何其他形式的存储介质中。示例性存储介质耦合到处理器,使得处理器可从存储介质读取信息以及向存储介质写入信息。另选地,存储介质可集成到处理器中。处理器和存储介质可驻留在ASIC中。ASIC可驻留在用户终端中。备选地,处理器和存储介质可作为分立组件驻留在用户终端中。
本公开的前述说明旨在使本领域的任何技术人员能够制作或使用本公开。对本公开的各种修改对于本领域技术人员来说将是显而易见的,并且在不脱离本公开的精神或范围的情况下,所定义的通用原理可应用于其他变型。因此,本公开不旨在限于所描述的示例和设计,而是符合与所公开的原理和新颖特征相一致的最宽范围。
Claims (20)
1.一种半导体封装件,包括:
无源衬底;
第一集成无源器件(IPD),在所述无源衬底上的第一层间介电(ILD)层中;
第二ILD层,在所述第一ILD层上;
第二IPD,在所述第二ILD层上的第三ILD层中;以及
热缓解结构,在所述第二IPD的电感元件上。
2.根据权利要求1所述的半导体封装件,其中所述热缓解结构包括薄膜散热器(TF-HS)层,所述薄膜散热器(TF-HS)层在所述第二ILD层上和在所述第二IPD的金属化布线层上。
3.根据权利要求1所述的半导体封装件,其中所述热缓解结构包括TF-HS层,所述TF-HS层在所述第一ILD层上并且在所述第二ILD层中的金属化布线层上。
4.根据权利要求1所述的半导体封装件,其中所述热缓解结构包括所述无源衬底上的TF-HS层。
5.根据权利要求1所述的半导体封装件,其中所述半导体封装件包括射频(RF)管芯,所述射频(RF)管芯集成到RF芯片封装件中。
6.根据权利要求1所述的半导体封装件,其中所述第一IPD包括金属-绝缘体-金属(MIM)电容器,并且所述第二IPD包括电感器。
7.根据权利要求1所述的半导体封装件,另外包括:
模制化合物,包封所述半导体封装件;
封装件衬底,具有耦合到所述半导体封装件上的封装球的焊盘;以及
底部填料,在所述封装球之间并且在所述封装件衬底与所述半导体封装件之间。
8.根据权利要求1所述的半导体封装件,进一步包括:
第一TF-HS层,在所述无源衬底上;
金属化堆叠,在所述第一TF-HS层上;
封装球,经由通孔焊盘耦合到所述金属化堆叠的金属化层;以及
第二TF-HS层,在所述金属化层的侧壁和部分表面上、并且在所述通孔焊盘的侧壁上。
9.根据权利要求1所述的半导体封装件,其中所述热缓解结构包括选自氮化铝(AlN)、氮化硅(SiNx)、化学气相沉积(CVD金刚石)和碳化硅(SiC)中的一者的材料的TF-HS层。
10.根据权利要求1所述的半导体封装件,其中所述无源衬底包括选自硅、玻璃、氧化铝和氧化铝陶瓷中的一者的材料。
11.一种用于制造半导体封装件中的热缓解结构的方法,所述方法包括:
在无源衬底上的第一层间介电(ILD)层中形成第一集成无源器件(IPD);
在所述第一ILD层上沉积第二ILD层;
在所述第二ILD层上的第三ILD层中形成第二IPD;以及
在所述第二IPD的电感元件上沉积薄膜散热器(TF-HS)层。
12.根据权利要求11所述的方法,进一步包括:
在所述第二ILD层上沉积TF-HS层;以及
在所述第二IPD的金属化布线层上沉积TF-HS层。
13.根据权利要求11所述的方法,进一步包括:在所述无源衬底上沉积第一TF-HS层。
14.根据权利要求13所述的方法,进一步包括:在所述第一ILD层上并且在所述第二ILD层中的金属化布线层上沉积第二TF-HS层。
15.根据权利要求11所述的方法,进一步包括:
沉积模制化合物以包封所述半导体封装件;
将具有焊盘的封装件衬底附着到所述半导体封装件上的封装球;以及
在所述封装球之间并且在所述封装件衬底与所述半导体封装件之间沉积底部填料。
16.根据权利要求11所述的方法,进一步包括:
在所述无源衬底上沉积第一TF-HS层;
在所述第一TF-HS层上形成金属化堆叠;
形成经由通孔焊盘耦合到所述金属化堆叠的金属化层的封装球;以及
在所述金属化层的侧壁和部分表面上、并且在所述通孔焊盘的侧壁上,沉积第二TF-HS层。
17.一种半导体封装件,包括:
无源衬底;
第一集成无源器件(IPD),在所述无源衬底上的第一层间介电(ILD)层中;
第二ILD层,在所述第一ILD层上;
第二IPD,在所述第二ILD层上的第三ILD层中;以及
用于从所述第二IPD的电感元件散热的部件。
18.根据权利要求17所述的半导体封装件,其中所述半导体封装件包括集成到RF芯片封装件中的射频(RF)管芯。
19.根据权利要求17所述的半导体封装件,其中所述第一IPD包括金属-绝缘体-金属(MIM)电容器,并且所述第二IPD包括电感器。
20.根据权利要求17所述的半导体封装件,其中所述无源衬底包括选自硅、玻璃、氧化铝和氧化铝陶瓷中的一者的材料。
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US16/898,096 | 2020-06-10 | ||
PCT/US2021/030697 WO2021252100A1 (en) | 2020-06-10 | 2021-05-04 | Advanced integrated passive device (ipd) with thin-film heat spreader (tf-hs) layer for high power handling filters in transmit (tx) path |
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US7759212B2 (en) * | 2007-12-26 | 2010-07-20 | Stats Chippac, Ltd. | System-in-package having integrated passive devices and method therefor |
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