CN115699187A - 堆叠存储器及存储系统 - Google Patents

堆叠存储器及存储系统 Download PDF

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Publication number
CN115699187A
CN115699187A CN202080101884.3A CN202080101884A CN115699187A CN 115699187 A CN115699187 A CN 115699187A CN 202080101884 A CN202080101884 A CN 202080101884A CN 115699187 A CN115699187 A CN 115699187A
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CN
China
Prior art keywords
volatile memory
die
stacked
memory
memory die
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Pending
Application number
CN202080101884.3A
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English (en)
Inventor
景蔚亮
王正波
崔靖杰
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Publication date
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Publication of CN115699187A publication Critical patent/CN115699187A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0614—Improving the reliability of storage systems
    • G06F3/0619—Improving the reliability of storage systems in relation to data integrity, e.g. data losses, bit errors
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0629—Configuration or reconfiguration of storage systems
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0683—Plurality of storage devices
    • G06F3/0685—Hybrid storage combining heterogeneous device types, e.g. hierarchical storage, hybrid arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1697—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2297—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0038—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/141—Battery and back-up supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1084—Data input buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay

Abstract

本申请公开了一种堆叠存储器及存储系统，涉及存储器领域，用于防止堆叠存储器的电源完整性和信号完整性下降的同时不增加裸片的数目。堆叠存储器包括相堆叠的易失性存储器裸片、非易失性存储器裸片；其中，非易失性存储器裸片包括非易失性存储阵列和外围电路，外围电路包括电源完整性电路和信号完整性电路；电源完整性电路用于将从下层裸片获取的电源进行电源完整性优化后传输给上层裸片；信号完整性电路用于将从下层裸片获取的信号进行信号完整性优化后传输给上层裸片。

Description

PCT国内申请，说明书已公开。

Claims (14)

  1. PCT国内申请，权利要求书已公开。
CN202080101884.3A 2020-06-28 2020-06-28 堆叠存储器及存储系统 Pending CN115699187A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2020/098645 WO2022000150A1 (zh) 2020-06-28 2020-06-28 堆叠存储器及存储系统

Publications (1)

Publication Number Publication Date
CN115699187A true CN115699187A (zh) 2023-02-03

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CN202080101884.3A Pending CN115699187A (zh) 2020-06-28 2020-06-28 堆叠存储器及存储系统

Country Status (4)

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US (1) US20230139599A1 (zh)
EP (1) EP4156189A4 (zh)
CN (1) CN115699187A (zh)
WO (1) WO2022000150A1 (zh)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5669338B2 (ja) * 2007-04-26 2015-02-12 株式会社日立製作所 半導体装置
KR20110135298A (ko) * 2010-06-10 2011-12-16 삼성전자주식회사 반도체 메모리 장치
CN110109736B (zh) * 2013-12-09 2023-03-07 超威半导体公司 3d芯片系统中的电压下降缓解
KR102410992B1 (ko) * 2015-11-26 2022-06-20 삼성전자주식회사 적층형 메모리 장치, 이를 포함하는 메모리 패키지 및 메모리 시스템
KR102494655B1 (ko) * 2017-06-19 2023-02-03 삼성전자주식회사 반도체 패키지
US10475771B2 (en) * 2018-01-24 2019-11-12 Micron Technology, Inc. Semiconductor device with an electrically-coupled protection mechanism and associated systems, devices, and methods
US10666264B1 (en) * 2018-12-13 2020-05-26 Micron Technology, Inc. 3D stacked integrated circuits having failure management

Also Published As

Publication number Publication date
US20230139599A1 (en) 2023-05-04
WO2022000150A1 (zh) 2022-01-06
EP4156189A1 (en) 2023-03-29
EP4156189A4 (en) 2023-08-23

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