CN115692525A - Thin film solar cell structure and manufacturing method thereof - Google Patents
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- CN115692525A CN115692525A CN202110846740.7A CN202110846740A CN115692525A CN 115692525 A CN115692525 A CN 115692525A CN 202110846740 A CN202110846740 A CN 202110846740A CN 115692525 A CN115692525 A CN 115692525A
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Abstract
The application provides a thin film solar cell structure and a manufacturing method thereof. The thin film solar cell structure includes: a solar cell epitaxial wafer; and a composite structure flexible substrate supporting the solar cell epitaxial wafer; the solar cell epitaxial wafer comprises a multijunction sub-cell epitaxial structure and a gate electrode layer positioned on the top cell epitaxial layer, and the composite structure flexible substrate comprises a metal grid mesh structure and a flexible organic thin film layer embedded in meshes of the metal grid mesh structure. By adopting the thin film solar cell structure and the manufacturing method thereof, the cell manufacturing process is simple, the yield is high, and the reliability is high.
Description
Technical Field
The application belongs to the technical field of thin film photoelectric chips, and particularly relates to a thin film solar cell structure and a manufacturing method thereof.
Background
With the development of various space technologies, a thin-film solar cell becomes a research hotspot in the field of space power supplies, and a thin-film solar cell chip, such as a thin-film gallium arsenide solar cell chip, has the advantages of ultra-light weight, flexibility and the like compared with the traditional solar cell chip, can meet the requirement of laying curved surfaces of various space equipment, can adopt reel type packaging to greatly save the space and the launching weight of a rocket launching bin, can be freely and flexibly unfolded in space, and eliminates the interference of a solar cell array on the flight attitude of a satellite or an airship.
The existing manufacturing process of a thin film solar cell chip generally adopts rigid and flexible substrate replacement technology, namely, an epitaxial layer of a solar cell is replaced from an original rigid substrate to a flexible substrate, so that the flexibility is realized. For example, for a thin-film gallium arsenide solar cell chip, a multi-junction gallium arsenide solar cell epitaxial layer needs to be replaced from an original rigid gallium arsenide substrate to a flexible substrate, an inorganic or organic interface high-pressure high-temperature bonding process is generally adopted in the replacement process, the flexible substrate is firstly bonded with a gallium arsenide epitaxial wafer, then the gallium arsenide substrate is removed, and finally, subsequent chip manufacturing is performed on the flexible substrate bonded with the gallium arsenide epitaxial layer. The bonding process has the problems of high requirements on interfaces and processing thereof, complex process, low large-area bonding yield, high cost and the like.
Disclosure of Invention
In order to solve the above problems and improve the requirements of the prior art, the invention provides a thin film solar cell structure and a manufacturing method thereof, so as to simplify the manufacturing process of a flexible thin film cell, avoid a high-pressure high-temperature bonding process and improve the yield and reliability of the cell.
A first aspect of the present invention provides a thin film solar cell structure comprising:
a solar cell epitaxial wafer; and
a composite-structured flexible substrate supporting a solar cell epitaxial wafer, wherein the composite-structured flexible substrate comprises:
a metal grid structure and a flexible organic thin film layer embedded in the grid of the metal grid structure.
According to one embodiment of the invention, the metal grid structure is made of a layer of metal material.
According to one embodiment of the invention, the metal grid structure is made up of two superimposed layers of metal material.
According to one embodiment of the invention, the area of the flexible organic thin film layer is 70-90% of the area of the flexible substrate.
According to one embodiment of the invention, the outer side of the composite structure flexible substrate comprises an additional metallic or non-metallic layer.
According to one embodiment of the invention, the solar cell epitaxial wafer comprises an ohmic contact layer, and the composite structure flexible substrate is in contact with the ohmic contact layer.
According to an embodiment of the present invention, the ohmic contact layer has the same mesh pattern as the metal grid structure, and the flexible organic thin film layer extends into the mesh of the ohmic contact layer.
A second aspect of the present invention provides a method for manufacturing a thin film solar cell structure, including:
preparing a solar cell epitaxial wafer, wherein the solar cell epitaxial wafer comprises an ohmic contact layer;
and manufacturing a composite structure flexible substrate on an ohmic contact layer of the solar cell epitaxial wafer, wherein the composite structure flexible substrate comprises a metal grid structure and a flexible organic thin film layer embedded in grids of the metal grid structure.
According to one embodiment of the invention, the manufacturing of the composite structure flexible substrate on the ohmic contact layer of the solar cell epitaxial wafer comprises the following steps:
manufacturing a metal grid structure on the ohmic contact layer;
and forming a flexible organic thin film layer on the metal grid mesh structure, so that the flexible organic thin film layer is embedded in the grids of the metal grid mesh structure.
According to one embodiment of the invention, the manufacturing of the composite structure flexible substrate on the ohmic contact layer of the solar cell epitaxial wafer comprises the following steps:
manufacturing a first metal grid structure on the ohmic contact layer;
forming a flexible organic thin film layer on the first metal grid structure, so that the flexible organic thin film layer is embedded in the grids of the first metal grid structure and comprises protruding parts corresponding to the grids of the first metal grid structure;
and filling a second metal layer in the concave parts between the protruding parts of the organic thin film layer to form a second metal grid structure superposed with the first metal grid structure.
According to the thin-film solar cell structure and the manufacturing method thereof, due to the adoption of the flexible substrate with the composite structure, the flexible substrate can be prepared on the solar cell epitaxial wafer by adopting conventional chip manufacturing processes such as photoetching, film coating and the like, so that the traditional high-pressure high-temperature bonding process is avoided. By adopting the thin film solar cell structure and the manufacturing method thereof, the cell manufacturing process is simple, the yield is high, the reliability is high, the thin film solar cell structure is suitable for the production of ultra-flexible thin film cell chips, and a new technical development path is provided for the preparation of ultra-large area thin film solar cell chips.
Drawings
FIG. 1 is a schematic diagram of a thin film solar cell structure according to one embodiment of the present invention;
FIG. 2 is a schematic diagram of a thin film solar cell structure according to another embodiment of the present invention;
FIG. 3 is a schematic diagram of a thin film solar cell structure according to another embodiment of the present invention;
FIG. 4 is a general flow diagram of a method of fabricating a thin film solar cell structure according to one embodiment of the invention;
fig. 5 is a flow chart of fabricating a composite structure flexible substrate on a solar cell epitaxial wafer according to an embodiment of the present invention;
fig. 6 is a flow chart of fabricating a composite structure flexible substrate on a solar cell epitaxial wafer according to another embodiment of the present invention;
fig. 7a-7f are schematic views illustrating the steps of the process of fabricating the thin film solar cell structure according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. In the embodiments of the present invention and the drawings, the same reference numerals denote the same meanings unless otherwise defined. It is noted that for clarity, the drawings of the embodiments may not necessarily be to scale; in addition, the drawings of the embodiments are only schematic structures, and some conventional structures which are not directly related to the concept of the present invention may be omitted; also, it should be noted that the order of the method steps described in the embodiments of the present invention does not necessarily indicate an actual execution order of the respective steps. Where feasible, the actual order of execution may differ from that described.
Fig. 1 is a schematic diagram of a thin film solar cell structure 10 according to one embodiment of the present invention. As shown in fig. 1, the thin film solar cell structure 10 includes a solar cell epitaxial wafer 110 and a composite structure flexible substrate 120 supporting the solar cell epitaxial wafer 110, wherein the composite structure flexible substrate 120 includes a metal grid structure 121 and a flexible organic thin film layer 122 embedded in a mesh of the metal grid structure 121. The solar cell epitaxial wafer 110 may be a single junction solar cell epitaxial wafer or a multi-junction solar cell epitaxial wafer. The metal grid structure 121 is made of a layer of metal material and may have a thickness of 10-100 microns. The metal material can be any one or any combination of more than two of Pd, au, ag, ni, ti, zn, al, cu and Fe. The flexible organic thin film layer 122 may be made of a flexible organic thin film material such as polyimide.
Preferably, the area of the flexible organic thin film layer is 70 to 90% of the area of the flexible substrate to increase the flexibility of the composite structure flexible substrate 120. Correspondingly, the total area of the hollow-out meshes of the metal grid structure 121 is 70 to 90% of the total area of the metal grid structure 121. The surface of the flexible organic thin film layer 122 may be flush with the surface of the metal grid structure 121. The metal grid structure 121 may adopt a periodic uniformly distributed grid pattern, such as a "field" grid pattern, a continuous diamond pattern, an equilateral triangle pattern, etc. The metal layer of the metal grid structure 121 may be used as an electrode of a thin film solar cell.
Fig. 2 is a schematic diagram of a thin film solar cell structure 20 according to another embodiment of the present invention. As shown in fig. 2, the thin film solar cell structure 20 includes a solar cell epitaxial wafer 210 and a composite structure flexible substrate 220 supporting the solar cell epitaxial wafer 210. Fig. 2 shows the ohmic contact layer 211 of the solar cell epitaxial wafer 210. The composite-structure flexible substrate 220 contacts the ohmic contact layer 211. The composite structure flexible substrate 220 includes a metal mesh structure 221 and a flexible organic thin film layer 222 embedded in the mesh of the metal mesh structure 221. This embodiment differs from the embodiment of fig. 1 in that the metal grid structure 221 is composed of two layers of stacked metal materials, i.e., includes a first metal grid structure 2211 and a second metal grid structure 2212. The first and second metal grid structures 2211 and 2212 comprise the same grid pattern and are stacked together to have a total thickness of about 10-100 microns.
Specifically, the metal layer of the first metal grid structure 2211 is used as a substrate-side ohmic contact layer, and directly contacts the ohmic contact layer 211 of the solar cell epitaxial wafer 210, and may be selected from any one of Pd, au, ag, ni, ti, zn, al, cu, and Fe, or any combination of two or more of them. The metal layer of the second metal grid structure 2212 mainly plays a role of supporting the battery epitaxial wafer 210, and may be selected from any one of Ag, ni, ti, al, cu, and Fe or any combination of two or more metal materials. The thickness of the second metal grid structure 2212 may be 10-20 times the thickness of the metal layer of the first metal grid structure 2211. The first metal grid structure 2211 and the second metal grid structure 2212 can be manufactured by adopting different process methods. Specifically, the first metal grid structure 2211 can be made by using a special coating device to realize an ohmic contact function. The second metal grid structure 2212 may use conventional coating equipment to improve coating efficiency.
In addition, in the embodiment shown in fig. 2, the outer side of the composite structure flexible substrate 220 may include an additional metal layer 230 to better integrate the metal grid structure 221 and the flexible organic thin film layer 222, further increasing the mechanical strength of the substrate. The metal layer 230 may be integrally formed with the second metal grid structure 2212. Alternatively, the metal layer 230 may be replaced with a non-metal layer 240. The non-metal layer 240 may be integrally formed with the flexible organic thin film layer 222. When the non-metal layer 240 is used, a conductive via may be formed in the non-metal layer 240 to electrically communicate with the metal grid structure. Other aspects of this embodiment may be the same as the embodiment of fig. 1 and will not be described again.
Fig. 3 is a schematic diagram of a thin film solar cell structure 30 according to another embodiment of the present invention. As shown in fig. 3, the thin film solar cell structure 30 includes a solar cell epitaxial wafer 310 and a composite structure flexible substrate 320 supporting the solar cell epitaxial wafer 310. The composite-structure flexible substrate 320 contacts the ohmic contact layer 311 of the solar cell epitaxial wafer 310. The composite-structure flexible substrate 320 includes a metal mesh structure 321 and a flexible organic thin film layer 322 embedded in meshes of the metal mesh structure 321. This embodiment is similar to the embodiment of fig. 2 in that the metal grid structure 321 is formed by two layers of metal material stacked together, i.e., includes a first metal grid structure 3211 and a second metal grid structure 3212. The outer side of the composite structure flexible substrate 320 may include an additional metal or non-metal layer 330 to further increase the mechanical strength of the base.
The embodiment shown in fig. 3 is substantially the same as the embodiment shown in fig. 2, except that the ohmic contact layer 311 has the same grid pattern as the metal grid structure 321, that is, the ohmic contact layer 311 is disposed corresponding to the metal layer of the metal grid structure 321, and the part corresponding to the grid of the metal grid structure 321 is a concave part; the flexible organic thin film layer 322 extends into the grid, i.e., the recesses, of the ohmic contact layer 311. Because the ohmic contact layer 311 is a light absorbing layer and has a grid structure, i.e., includes a hollow portion, the light absorbing area of the ohmic contact layer can be reduced, which is beneficial to improving the efficiency of the solar cell. Other aspects of this embodiment can be found in the embodiment of fig. 2 and will not be described further herein.
Fig. 4 is a general flow chart of a method of fabricating a thin film solar cell structure according to an embodiment of the invention. Fig. 5 is a flow chart of fabricating a composite structure flexible substrate on a solar cell epitaxial wafer according to an embodiment of the present invention. Fig. 6 is a flow chart of fabricating a composite structure flexible substrate on a solar cell epitaxial wafer according to another embodiment of the present invention.
Referring to fig. 4, the method for manufacturing a thin film solar cell structure according to the embodiment of the present invention includes the following steps:
s1, preparing a solar cell epitaxial wafer, wherein the solar cell epitaxial wafer comprises an ohmic contact layer. Specifically, a solar cell epitaxial wafer may be epitaxially grown on the temporary substrate using conventional epitaxial growth techniques. The solar cell epitaxial wafer may comprise a single-junction or multi-junction cell.
And S2, manufacturing a composite structure flexible substrate on an ohmic contact layer of the solar cell epitaxial wafer, wherein the composite structure flexible substrate comprises a metal grid structure and a flexible organic thin film layer embedded in a grid of the metal grid structure.
Specifically, referring to fig. 5, the fabricating of the composite structure flexible substrate on the ohmic contact layer of the solar cell epitaxial wafer in step S2 includes:
and S21, manufacturing a metal grid structure on the ohmic contact layer. Specifically, a metal layer can be deposited on an ohmic contact layer of a solar cell epitaxial wafer through a coating process such as evaporation, sputtering and the like, then a grid pattern of a metal grid structure is formed through a photoetching process by utilizing photoresist, and then the metal layer of a corresponding grid part of the metal grid structure is removed through an etching process, so that the metal grid structure with the grid pattern is formed.
And S22, forming a flexible organic thin film layer on the metal grid mesh structure, and embedding the flexible organic thin film layer in the grids of the metal grid mesh structure. Specifically, the organic thin film material may be deposited on the metal layer of the metal grid structure and fill the cells of the metal grid structure by chemical vapor deposition; the organic thin film layer deposited on the metal layer outside the grid part can be removed through a photoetching process; or remain on the metal layer to further enhance the supporting effect of the composite structure flexible substrate on the solar cell epitaxial wafer. In this case, conductive vias may be etched in the organic thin film layer remaining on the metal layer to electrically communicate with the underlying metal layer.
Alternatively, referring to fig. 6, in step S2, the fabricating of the composite structure flexible substrate on the ohmic contact layer of the solar cell epitaxial wafer includes:
s21', fabricating a first metal grid structure on the ohmic contact layer as described above;
s22', forming a flexible organic thin film layer on the first metal grid structure, so that the flexible organic thin film layer is embedded in the cells of the first metal grid structure and includes protruding portions corresponding to the cells of the first metal grid structure. Specifically, a layer of thicker organic thin film material may be coated on the first metal grid structure to form a flexible organic thin film layer, so that the flexible organic thin film layer covers the metal layer of the metal grid structure and fills the grids of the metal grid structure; and removing the organic thin film layer coated on the metal layer outside the grid part by a photoetching process, so that the organic thin film layer corresponding to the grids of the first metal grid structure protrudes out of the surface of the metal layer to form a protruding part.
S23', filling a second metal layer in the recess between the protruding portions of the organic thin film layer to form a second metal grid structure overlapping the first metal grid structure. Specifically, a metal layer may be deposited on the previously formed flexible organic thin film layer by a plating process such as evaporation, sputtering, electroless plating, etc. to fill the recesses between the protruding portions of the organic thin film layer. The metal layer deposited on the organic thin film layer outside the concave part can be reserved so as to improve the strength of the composite structure flexible substrate and further enhance the supporting effect of the composite structure flexible substrate on the solar cell epitaxial wafer.
Fig. 7a-7f are schematic structural diagrams illustrating a process of fabricating a triple junction solar cell according to an embodiment of the invention. The preparation process comprises the following steps:
1) First, as shown in fig. 7a, a multi-junction solar cell epitaxial wafer is prepared by the following process: providing a temporary substrate 100, growing a buffer layer 101, a barrier layer 102, a first ohmic contact layer 103, a first junction epitaxial cell 104, a first transition layer 105, a second junction epitaxial cell 106, a second transition layer 107, a third junction epitaxial cell 108 and a second ohmic contact layer 109 on the temporary substrate 100 in sequence, and patterning the second ohmic contact layer 109, thereby forming a three-junction solar cell epitaxial wafer.
Specifically, taking a gallium arsenide triple junction solar cell as an example, the temporary substrate 100 may be a GaAs wafer, the buffer layer 101 may be a GaAs thin film, the barrier layer 102 may be a GaInP thin film, the first ohmic contact layer 103 may be a GaAs thin film, the first junction epitaxial cell 104 may be a GaInP cell layer, the first transition layer 105 may be an AlGaAs thin film, the second junction epitaxial cell 106 may be a GaAs cell layer, the second transition layer 107 may be an AlGaAs thin film, the third junction epitaxial cell 108 may be an InGaAs cell layer, and the second ohmic contact layer 109 may be an InGaAs thin film.
2) Next, as shown in fig. 1b, a first metal grid structure 201 is fabricated on the patterned second ohmic contact layer 109: a patterned ohmic contact metal structure layer is obtained as the first metal grid structure 201 by using a patterned etching and metal plating method. The first metal grid structure 201 has the same grid-like pattern as the second ohmic contact layer 109. The metal layer of the first metal grid structure 201 is preferably composed of two or more of Pd, au, ag, ni, ti, zn, al, cu, fe. The metal layer of the first metal grid structure 201 serves as a base functional layer, serving as a good ohmic contact to the cell epitaxial wafer and as a seed connection layer for the metal conductive layer of the underlying second metal grid structure 203 (fig. 1 c).
3) Next, as shown in fig. 1c, a flexible organic thin film layer 202 is deposited on the first metal grid structure 201, such that the flexible organic thin film layer 202 fills in the meshes of the first metal grid structure 201 and the recesses of the second ohmic contact layer 109, and protrudes from the surface of the metal layer of the first metal grid structure 201 at positions corresponding to the meshes of the first metal grid structure 201, forming protruding portions 2021. Next, a second metal layer is filled in the concave portion between the protruding portions 2021 of the organic thin film layer 202 to form a second metal grid structure 203 overlapping the first metal grid structure 201.
Specifically, a relatively thick organic material, preferably composed of polyimide, may be coated on the first metal grid structure 201 to form the flexible organic thin film layer 202. Coating an organic thin film material on the metal layer of the first metal grid structure 201 and filling the grids of the metal grid structure; then, the organic thin film layer 202 coated on the metal layer outside the mesh part of the first metal grid structure 201 is removed by a photolithography process, so that the organic thin film layer 202 corresponding to the mesh of the first metal grid structure 201 protrudes from the surface of the metal layer to form a protruding part 2021.
Next, a second metal layer may be deposited on the previously formed flexible organic thin film layer 202 by a plating process such as evaporation, sputtering, or the like to fill the recesses between the protruding portions 2021 of the organic thin film layer 202. The second metal layer is preferably composed of two or more of Ag, ni, ti, al, cu, and Fe. The second metal layer deposited on the organic thin film layer 202 outside the recess may be removed to form a second metal grid structure 203. Optionally, the second metal layer deposited on the organic thin film layer 202 outside the concave portion may also be retained to improve the strength of the composite structure flexible substrate and further enhance the supporting effect of the composite structure flexible substrate on the solar cell epitaxial wafer.
4) Next, as shown in fig. 1d, the temporary substrate 100, the buffer layer 101, and the barrier layer 102 are removed to expose the first ohmic contact layer 103;
5) As shown in fig. 1e, a patterned metal electrode layer 301 is formed on the surface of the first ohmic contact layer 103. Preferably, two or more metal materials of Pd, au, ag, ni, ti, ge, al and Cu are adopted to form the metal electrode layer 301; the metal electrode layer 301 is patterned by a photolithography process, and the metal electrode layer 301 is preferably 2000 to 4000nm in thickness. The metal electrode layer 301 can function as a gate electrode layer.
6) Then, as shown in fig. 1f, an anti-reflection film layer 302 is formed on the surface of the solar cell chip on which the patterned metal electrode layer 301 is formed. The antireflection film layer is preferably composed of TiO2, siO2 and Al2O3, so that a complete solar cell chip structure is obtained.
And finally, obtaining the single flexible thin film solar cell chip by conventional process procedures such as isolation photoetching, corrosion, cutting and the like. The method is also suitable for preparing the thin film battery with more junctions such as single junction, double junction, four junction and the like.
According to the thin-film solar cell structure and the manufacturing method thereof, due to the adoption of the flexible substrate with the composite structure, the flexible substrate can be prepared on the solar cell epitaxial wafer by adopting conventional chip manufacturing processes such as photoetching, film coating and the like, so that the traditional high-pressure high-temperature bonding process is avoided. By adopting the thin film solar cell structure and the manufacturing method thereof, the cell manufacturing process is simple, the yield is high, the reliability is high, and the thin film solar cell structure and the manufacturing method are suitable for large-area ultra-flexible thin film cell chip production.
The foregoing embodiments are merely illustrative of the principles and configurations of this invention and are not to be construed as limiting thereof, it being understood by those skilled in the art that any variations and modifications which come within the spirit of the invention are desired to be protected. The protection scope of the present invention shall be subject to the scope defined by the claims of the present application.
Claims (10)
1. A thin film solar cell structure comprising:
a solar cell epitaxial wafer; and
a composite-structured flexible substrate supporting a solar cell epitaxial wafer, wherein the composite-structured flexible substrate comprises:
a metal grid structure and a flexible organic thin film layer embedded in the grid of the metal grid structure.
2. The thin film solar cell structure of claim 1 wherein the metal grid structure is comprised of a layer of metal material.
3. The thin film solar cell structure of claim 1 wherein the metal grid structure is comprised of two layers of superimposed metal material.
4. The thin-film solar cell structure of claim 1 wherein the area of the flexible organic thin-film layer is 70-90% of the area of the flexible substrate.
5. The thin-film solar cell structure of claim 1 wherein the outer side of the composite structure flexible substrate comprises an additional metal or non-metal layer.
6. The thin film solar cell structure of claim 1 wherein the solar cell epitaxial wafer comprises an ohmic contact layer, the composite structure flexible substrate contacting the ohmic contact layer.
7. The thin film solar cell structure of claim 6 wherein the ohmic contact layer has the same grid pattern as the metal grid structure, the flexible organic thin film layer extending into the grid of the ohmic contact layer.
8. A manufacturing method of a thin film solar cell structure comprises the following steps:
preparing a solar cell epitaxial wafer, wherein the solar cell epitaxial wafer comprises an ohmic contact layer;
and manufacturing a composite structure flexible substrate on an ohmic contact layer of the solar cell epitaxial wafer, wherein the composite structure flexible substrate comprises a metal grid structure and a flexible organic thin film layer embedded in grids of the metal grid structure.
9. The method of fabricating a thin-film solar cell structure of claim 8, wherein fabricating a composite-structured flexible substrate on an ohmic contact layer of a solar cell epitaxial wafer comprises:
manufacturing a metal grid structure on the ohmic contact layer;
and forming a flexible organic thin film layer on the metal grid mesh structure, so that the flexible organic thin film layer is embedded in the grids of the metal grid mesh structure.
10. The method of fabricating a thin-film solar cell structure of claim 8, wherein fabricating a composite-structured flexible substrate on an ohmic contact layer of a solar cell epitaxial wafer comprises:
manufacturing a first metal grid structure on the ohmic contact layer;
forming a flexible organic thin film layer on the first metal grid structure, so that the flexible organic thin film layer is embedded in the grids of the first metal grid structure and comprises protruding parts corresponding to the grids of the first metal grid structure;
and filling a second metal layer in the concave parts between the protruding parts of the organic thin film layer to form a second metal grid structure superposed with the first metal grid structure.
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| CN103594539A (en) * | 2013-10-22 | 2014-02-19 | 扬州乾照光电有限公司 | Flexible multi-joint GaAs solar battery and manufacturing method thereof |
| KR101877847B1 (en) * | 2017-02-23 | 2018-07-12 | 한국에너지기술연구원 | Method for alleviating stress of flexible substrate for thin film solar cell |
| CN110634992A (en) * | 2019-09-04 | 2019-12-31 | 中国电子科技集团公司第十八研究所 | Preparation method of composite structure material substrate for thin film gallium arsenide solar cell |
| CN111799344A (en) * | 2020-09-08 | 2020-10-20 | 南昌凯迅光电有限公司 | Flexible gallium arsenide solar cell and manufacturing method thereof |
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