CN104319304A - Multijunction solar cell and preparation method thereof - Google Patents
Multijunction solar cell and preparation method thereof Download PDFInfo
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- CN104319304A CN104319304A CN201410630008.6A CN201410630008A CN104319304A CN 104319304 A CN104319304 A CN 104319304A CN 201410630008 A CN201410630008 A CN 201410630008A CN 104319304 A CN104319304 A CN 104319304A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 238000003475 lamination Methods 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 16
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 12
- 230000005693 optoelectronics Effects 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000000407 epitaxy Methods 0.000 abstract description 17
- 238000004026 adhesive bonding Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 63
- 238000000034 method Methods 0.000 description 17
- 238000005516 engineering process Methods 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 11
- 229920000297 Rayon Polymers 0.000 description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 4
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- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
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- 238000000137 annealing Methods 0.000 description 1
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- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- 230000003628 erosive effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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- H01L31/0725—Multiple junction or tandem solar cells
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Abstract
The invention provides a multijunction solar cell and a preparation method thereof. The multijunction solar cell structurally comprises a first epitaxy structure and a second epitaxy structure placed on the first epitaxy structure, wherein the first epitaxy structure sequentially comprises a substrate, a first photovoltaic conversion lamination layer and a covering layer from bottom to top, and the second epitaxy structure sequentially comprises a back contact layer and a second photovoltaic conversion lamination layer from bottom to top. A first electrode layer and a second electrode layer are arranged on the surface of the covering layer of the first epitaxy structure and the surface of the back contact layer of the second epitaxy structure respectively, and the vertical projection of the second electrode layer is placed in the first electrode layer. The covering layer of the first epitaxy structure and the back contact layer of the second epitaxy structure are connected through a gluing layer. The first electrode layer and the second electrode layer are connected, so that the first epitaxy structure and the second epitaxy structure are connected with each other, and therefore the multijunction solar cell is formed.
Description
Technical field
The invention belongs to compound semiconductor area of solar cell, be specifically related to a kind of high-efficiency multi-junction solar cell and preparation method thereof.
Background technology
Develop solar energy in recent years, photovoltaic power generation technology has attracted the common concern of people, wherein compound semiconductor solar cell reduces space, one of Ground Application generation technology being acknowledged as most potentiality with its higher conversion efficiency and larger cost of electricity-generating.
In order to obtain the compound semiconductor solar cell with higher conversion efficiency, the continuous research and probe of people, has successively developed binode, three-joint solar cell, the multiple solar battery structures such as impalpable structure, inverted structure solar cell.Such as, Emcore company reports a kind of use upside-down mounting epitaxy technology disposable successful extension formation GaInP/GaAs/InGaAs (1.0eV)/InGaAs (0.7eV) upside-down mounting four-junction solar cell on gaas substrates, generally, during employing upside-down mounting epitaxy technology, very thin emission layer needs grow first, and then grow very thick base and its minor battery structure successively, in longer growth course, the annealing etc. of emission layer is affected and will make top battery structure (thickness, doping and interface) change, overall structure is made to be difficult to control, battery performance will be greatly affected.
Another obtains approach of multijunction cell is to be bonded together by two binode batteries by the mode of wafer bonding to obtain, and technique route is relatively low to extension technical requirement, and its key is the exploitation of wafer bond techniques.Wafer bond techniques is generally divided into directly bonding semiconductor, aligning bonding and middle Intercalative binding medium to carry out bonding etc.Aim at bonding technology and first make metal grid lines at two bonded interface places, then by bonding technology of carrying out bonding more aligned with each other for metal grid lines, bond strength meets the demands.Because metal grid lines has certain thickness, interface place will be made after bonding completes to there is one deck space, and this is disadvantageous to the application of product.The technique para-linkage medium that middle Intercalative binding medium carries out bonding requires higher, General Requirements its there is good conductivity, conductivity and light transmission, therefore medium choose outbalance, Soitec uses ITO to obtain GaInP/GaAs/InGaAsP/InGaAs tetra-junction battery as bonding medium, but ITO only has about 85% in the transmitance of long-wave band light (>1000nm), bottom two junction battery current limlitings will be caused, affect battery performance.In order to avoid the technological difficulties of above bonding technology, people select directly bonding semiconductor technique sometimes.This is a kind of bonding techniques making to be formed between semiconductor and semiconductor covalent bond by HTHP, needs the crystal orientation of bonding semiconductor interface aligned with each other to obtain good bond strength, but crystal orientation aligning is difficult.In addition, be the bonded interface that the bonding technology of Direct Bonding or middle Intercalative binding medium all needs to have atomically flating, and often a micron-sized particle all will make the bonding at this place to realize, and has a strong impact on bonding yield and large-scale production.
Summary of the invention
The object of this invention is to provide a kind of high-efficiency multi-junction solar cell and preparation method thereof, it adopts formal dress epitaxy technology, use viscose technique for sticking, be connected with the front metal electrode of understructure by the back metal electrode of superstructure, thus realize multijunction solar cell structure.The evenness not requirement at para-linkage interface of the present invention, the viscose of use is very high to the transmitance of light, therefore compensate for the difficult point of directly bonding semiconductor and middle Intercalative binding medium bonding technology, also there is not voiding problem when aiming at bonding simultaneously.
Multijunction solar cell, comprise: the first epitaxial structure and the second epitaxial structure be located thereon, wherein the first epitaxial structure comprises substrate, the first opto-electronic conversion lamination and cover layer from bottom to top successively, and the second epitaxial structure comprises back contact, the second opto-electronic conversion lamination from bottom to top successively; The cover surface of described first epitaxial structure and the back contact surface of described second epitaxial structure have first, second electrode layer respectively, and the upright projection of described the second electrode lay is in described first electrode layer; The cover layer of described first epitaxial structure is engaged by a mucigel with between the back contact of described second epitaxial structure; Described first electrode layer is connected by a metal connecting layer with the second electrode lay, and its projection on described first epitaxial structure is positioned at outside the projection of described second epitaxial structure on the first epitaxial structure.
Preferably, described second epitaxial structure upright projection is in described first epitaxial structure.
Preferably, the projection of described the second electrode lay on the first epitaxial structure is less than the area of described first epitaxial structure, but is greater than the area of described second epitaxial structure.
Preferably, described first opto-electronic conversion lamination comprises the first sub-battery and the second sub-battery successively, and the second opto-electronic conversion lamination comprises the 3rd sub-battery and the 4th sub-battery successively.
Preferably, the band gap width magnitude relationship of described four knot batteries is: the sub-battery of the first sub-battery < second sub-battery battery < the 4th of < the 3rd.
Preferably, the cover layer of described first epitaxial structure and the back contact of described second epitaxial structure can be all GaAs, InGaP or InGaAs.
Preferably, the material of first, second electrode layer described is AuGe alloy, AuSn alloy, AuBe alloy, AuZn alloy, Au or Ag.
Preferably, the area accounting of described first electrode layer in described first epitaxial structure is 1% ~ 15%.
Preferably, the area accounting of described the second electrode lay in described second epitaxial structure is 1% ~ 15%.
Preferably, the figure of described first electrode layer and the second electrode lay is all containing main grid, and the main grid of described first electrode layer and the second electrode lay is connected to each other.
Preferably, the main grid width of described first electrode layer is 20 microns ~ 500 microns.
Preferably, the main grid width of described the second electrode lay is 20 microns ~ 500 microns.
A kind of preparation method of multijunction solar cell, comprise step: 1) difference formal dress epitaxial growth first extension and the second epitaxial structure, wherein the first epitaxial structure comprises substrate, the first opto-electronic conversion lamination and cover layer from bottom to top successively, and the second epitaxial structure comprises back contact, the second opto-electronic conversion lamination from bottom to top successively; 2) in the cover surface of described first epitaxial structure, form the first electrode layer, form the second electrode lay on the surface at the back contact of described second epitaxial structure; 3) engage described first epitaxial structure and the second epitaxial structure: use a mucigel, fit between the cover layer of described first epitaxial structure and the back contact of described second epitaxial structure, ensure that the upright projection of the second electrode lay is in the first electrode layer simultaneously; 4) form a metal connecting layer and be electrically connected the first electrode layer and the second electrode lay, make the conducting each other of two epitaxial structures, thus formation multijunction solar cell, the projection of metal connecting layer on described first epitaxial structure of described formation is positioned at outside the projection of described second epitaxial structure on the first epitaxial structure.
Preferably, described step 4) comprises: remove part second epitaxial structure exposed portion the second electrode lay; Remove the described mucigel of part, exposed portion first electrode layer, it obtains the area that the projection of the second metal level on the first epitaxial structure is less than described first epitaxial structure, but is greater than the area of described second epitaxial structure; Form described metal connecting layer, its one end is positioned on the first electrode layer of exposing, and the other end is positioned on the second electrode lay that exposes, thus is electrically connected first, second electrode layer.
Innovative point of the present invention is, use formal dress epitaxy technology completely, high-quality many knots battery can be obtained more simply, sub-battery performance easily ensures, use viscose technique for sticking, be connected with the front metal electrode of understructure by the back metal electrode of superstructure, thus complete multijunction solar cell structure, compensate for the difficult point of directly bonding semiconductor and middle Intercalative binding medium bonding technology, also there is not voiding problem when aiming at bonding simultaneously.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for specification, together with embodiments of the present invention for explaining the present invention, is not construed as limiting the invention.In addition, accompanying drawing data describe summary, is not draw in proportion.
Fig. 1 is the side sectional view according to a kind of multijunction solar cell of the invention process.
Fig. 2 is the side sectional view growing the first epitaxial structure in InP substrate.
Fig. 3 is the side sectional view growing the second epitaxial structure on gaas substrates.
Fig. 4 is the side sectional view forming the first electrode layer in the first epitaxial structure cover surface.
Second epitaxial structure upper surface is pasted on temporary support by Fig. 5, removes substrate and sacrifice layer, forms the side sectional view of the second electrode afterwards on back contact surface.
Fig. 6 ~ Fig. 8 shows several vertical view pattern for first, second electrode layer shown in Fig. 4 and Fig. 5.
Fig. 9 be by use between the cover layer of the first epitaxial structure and the back contact of the second epitaxial structure mucigel engage after side sectional view.
Figure 10 is according to InGaP/GaAs/InGaAsP/ InGaAs multijunction solar cell side sectional view of the invention process.
Embodiment
Now details of the present invention be will describe, exemplary aspect of the present invention and embodiment comprised.Referring to diagram and following description, identical Ref. No. for identifying identical or functionally similar element, and is intended to the principal character that one exemplary embodiment is described with the graphic mode highly simplified.
Please refer to accompanying drawing 1, a kind of multijunction solar cell, comprise the first epitaxial structure 100 and the second epitaxial structure 200, connected by mucigel 400 between the two.Concrete, the first epitaxial structure 100 comprises the sub-battery 110 of substrate 101, first, tunnel junctions 120, second sub-battery 130 and cover layer 140; Second epitaxial structure 200 comprises back contact 220, the 3rd sub-battery 230, tunnel junctions 240 and the 4th sub-battery 250.The surface that wherein cover layer 140 of the first epitaxial structure 100 has the back contact 220 of the first electrode layer 301, second epitaxial structure 200 on the surface has the second electrode lay 302, the first electrode layer 301, the second electrode lay 302 and the projection P of the second epitaxial structure respectively on the first epitaxial structure
301, P
302, P
200pass be: P
301> P
302> P
200.First electrode layer 301 is connected by metal connecting layer 600 with the second electrode lay 302, and its projection on the first epitaxial structure 100 is positioned at outside the second projection of epitaxial structure 200 on the first epitaxial structure.
Elaborate to according to a kind of multijunction solar cell structure of the invention process below in conjunction with manufacture method.
A manufacture method for multijunction solar cell structure, comprises step below:
Please refer to accompanying drawing 2, epitaxial growth first epitaxial structure 100.
One p-type InP substrate 101 cleaned up, load MOCVD reative cell, chamber pressure is arranged on 120mbar.At 750 DEG C, toast substrate 10 minutes, be cooled to 600 DEG C, extension forms the sub-battery 110 of InGaAs first.Being specially first growth thickness is the p-type Al of 20nm
0.2in
0.54ga
0.26as back surface field layer 111, then growth thickness is 3 μm, doping content is 1 × 10
17cm
-3p-type In
0.54ga
0.46as base 112, regrowth thickness is 150nm, doping content is 2 × 10
18cm
-3n-shaped In
0.54ga
0.46as emission layer 113, last growth thickness is 50nm, doping content is 1 × 10
18cm
-3n-shaped Al
0.2in
0.54ga
0.26as Window layer 114, forms the sub-battery 110 of InGaAs first.
In InGaAs first sub-battery 110 Epitaxial growth n++-AlInGaAs/p++-AlInGaAs tunnel junctions 120.First growth thickness is 15nm, doping content is 2 × 10
19cm
-3n-shaped Al
0.3in
0.54ga
0.16as layer 121, then growth thickness is 15nm, doping content is 2 × 10
20cm
-3p-type Al
0.3in
0.54ga
0.16as layer 122.
At the sub-battery 130 of n++-AlInGaAs/p++-AlInGaAs tunnel junctions 120 Epitaxial growth InGaAsP second.Be specially the p-type InP back surface field layer 131 that first growth thickness is 50nm, then growth thickness is 2 μm, doping content is 1 × 10
17cm
-3p-type InGaAsP base 132, regrowth thickness is 150nm, doping content is 2 × 10
18cm
-3n-shaped InGaAsP emission layer 133, last growth thickness is 50nm, doping content is 1 × 10
18cm
-3n-shaped InP Window layer 134.At InGaAsP second sub-battery 130 Epitaxial growth N-shaped In
0.3ga
0.7as cover layer 140, thickness is 200nm, doping content is 1 × 10
19cm
-3, thus in InP substrate, complete the first epitaxial structure 100.
Please refer to accompanying drawing 3, epitaxial growth second epitaxial structure 200.
Cleaned up by one N-shaped GaAs substrate 202, and load MOCVD reative cell, chamber pressure is arranged on 120mbar.First at 750 DEG C, toast substrate 10 minutes, be cooled to 650 DEG C, epitaxial growth p-type InGaP sacrifice layer 210, thickness 200nm, then grow p-type GaAs back contact 220, thickness 200nm, doping content is 1 × 10
19cm
-3.GaAs back contact 220 grows the sub-battery 230 of GaAs the 3rd.Be specially the p-type AlGaAs back surface field layer 231 that first growth thickness is 20nm, then growth thickness is 3 μm, doping content is 1 × 10
17cm
-3p-type GaAs base 232, regrowth thickness is 100nm, doping content is 2 × 10
18cm
-3n-shaped GaAs emission layer 233, last growth thickness is 50nm, doping depth is 1 × 10
18cm
-3n-shaped GaInP Window layer 234.
In GaAs the 3rd sub-battery 230 Epitaxial growth n++-GaInP/p++-AlGaAs tunnel junctions 240, be cooled to 580 DEG C, first growth thickness is 15nm, doping content is 2 × 10
19cm
-3n-shaped GaInP layer 241, then growth thickness is 15nm, doping content is 2 × 10
20cm
-3p-type AlGaAs layer 242.
At the sub-battery 250 of n++-GaInP/p++-AlGaAs tunnel junctions 240 Epitaxial growth InGaP the 4th.Be specially the p-type AlInGaP back surface field layer 251 that first growth thickness is 20nm, then growth thickness is 600nm, doping content is 6 × 10
16cm
-3p-type In
0.5ga
0.5p base 252, regrowth thickness is 150nm, doping content is 5 × 10
18cm
-3n-shaped In
0.5ga
0.5p emission layer 253, last growth thickness is 50nm, doping depth is 5 × 10
18cm
-3n-shaped AlInP Window layer 254, thus complete the second epitaxial structure 200 on gaas substrates.
Please refer to accompanying drawing 4, the first electrode layer 301 is made at the first epitaxial structure 100 upper surface, its material is AuBe/Ti/Ag, gross thickness is 5 μm, and electrode pattern is grid line shape, as shown in Figure 6, main grid is wide 200 μm, secondary grid width 5 μm, the area accounting of the first electrode layer 301 in the first epitaxial structure is 1 ~ 15%, is preferably 5%.
Please refer to accompanying drawing 5, remove the substrate 202 of the second epitaxial structure 200 and sacrifice layer 210 and form the second electrode lay 302 on back contact 220.Being specially in second epitaxial structure 200 upper surface spin coating a layer thickness is the CR-200 glue 700 of 20 μm, then quartz glass plate 800 is placed, ensure that CR-200 glue 700 and quartz glass plate 800 fit tightly, between there is no space, finally at 200 DEG C, under 200kpa condition 5 minutes consuming time, quartz glass plate 800 and the second epitaxial structure 200 are combined closely; Use ammoniacal liquor: peroxide water: water=2:3:1 solution, 1 hour consuming time, GaAs substrate 202 is removed in selective corrosion, then phosphoric acid is used: hydrochloric acid=2:3 solution-selective erosion removal InGaP sacrifice layer 210, then washed with de-ionized water second epitaxial structure is used, make AuGe/Ti/Ag the second electrode lay 302 by photoetching and evaporation coating technique on GaAs back contact 220 surface of the second epitaxial structure, gross thickness is 5 μm.The second electrode lay 302 is grid line shape, and as shown in Figure 6, main grid is wide 50 μm, secondary grid width 5 μm, and the area accounting of metal electrode figure in the first epitaxial structure is 3%, and the profile of electrode pattern 302 is slightly less than electrode pattern 301.Fig. 6 ~ 8 show the vertical view pattern of several electrode pattern 301 and 302.
Please refer to accompanying drawing 9, engage the first epitaxial structure 100 and the second epitaxial structure 200.Be specially first epitaxial structure 100 upper surface formed thickness be Tra-bond glue as mucigel 400, then is fitted each other with the first epitaxial structure 100 cover surface in the second epitaxial structure 200 back contact surface, then 200 DEG C, within 5 minutes consuming time, realize under 200kpa condition both fit tightly.Finally heat 10 minutes at 200 DEG C, remove quartz glass plate 800, then remove CR-200 glue 700.
Please refer to accompanying drawing 10, form connection metal layer 600 and the main grid of the first electrode layer 301 and the second electrode lay 302 is connected with each other.Remove part second epitaxial structure 200 specifically by photoetching and ICP etch process, expose the part main grid of the second electrode lay 302, then remove metal electrode figure 301 surface portion mucigel 400, expose the part main grid of the first electrode layer 301; SiO is formed at the second epitaxial structure sidewall
2protective layer 500; Use evaporation process plated metal articulamentum 600, its one end is positioned on the main grid of the first electrode layer exposed, the other end is positioned on the main grid of the second electrode lay exposed, thus the main grid of the first electrode layer 301 and the second electrode 302 is connected to each other, final acquisition InGaP/GaAs/InGaAsP/ InGaAs multijunction solar cell.
In the present embodiment, be different from four junction batteries using upside-down mounting epitaxy technology, use formal dress epitaxy technology completely, can obtain high-quality four knot batteries more simply, sub-battery performance easily ensures; GaInP/InGaAs(or GaAs that the present embodiment obtains)/InGaAsP/InGaAs tetra-junction battery band gap is combined as 1.9eV/1.4eV/1.0eV/0.6eV, higher open circuit voltage (being greater than 4.1V under 1000 times) can be obtained, compensate for the impact that first, second knot battery current limliting causes four junction battery performances; Use viscose technique for sticking, be connected with the front metal electrode of understructure by the back metal electrode of superstructure, thus realize multijunction solar cell structure.The evenness not requirement at para-linkage interface of the present invention, the viscose of use is very high to the transmitance of light, therefore compensate for the difficult point of directly bonding semiconductor and middle Intercalative binding medium bonding technology, also there is not voiding problem when aiming at bonding simultaneously.
Claims (12)
1. multijunction solar cell, comprise: the first epitaxial structure and the second epitaxial structure be located thereon, wherein the first epitaxial structure comprises substrate, the first opto-electronic conversion lamination and cover layer from bottom to top successively, and the second epitaxial structure comprises back contact, the second opto-electronic conversion lamination from bottom to top successively; The cover surface of described first epitaxial structure and the back contact surface of described second epitaxial structure have first, second electrode layer respectively, and the upright projection of described the second electrode lay is in described first electrode layer; The cover layer of described first epitaxial structure is connected by a mucigel with between the back contact of described second epitaxial structure; Described first electrode layer is connected by a metal connecting layer with the second electrode lay, and its projection on described first epitaxial structure is positioned at outside the projection of described second epitaxial structure on the first epitaxial structure.
2. multijunction solar cell according to claim 1, is characterized in that: described second epitaxial structure upright projection is in described first epitaxial structure.
3. multijunction solar cell according to claim 2, is characterized in that: the projection of described the second electrode lay on the first epitaxial structure is less than the area of described first epitaxial structure, but is greater than the area of described second epitaxial structure.
4. multijunction solar cell according to claim 1, is characterized in that: described first opto-electronic conversion lamination comprises the first sub-battery and the second sub-battery successively, and the second opto-electronic conversion lamination comprises the 3rd sub-battery and the 4th sub-battery successively.
5., according to wanting the sharp multijunction solar cell required described in 4, it is characterized in that: the band gap width magnitude relationship of described four knot batteries is: the sub-battery of the first sub-battery < second sub-battery battery < the 4th of < the 3rd.
6. multijunction solar cell according to claim 1, is characterized in that: the cover layer of described first epitaxial structure and the back contact of described second epitaxial structure are GaAs, InGaP or InGaAs.
7. multijunction solar cell according to claim 1, is characterized in that: the area accounting of described first electrode layer in described first epitaxial structure is 1% ~ 15%.
8. multijunction solar cell according to claim 1, is characterized in that: the area accounting of described the second electrode lay in described second epitaxial structure is 1% ~ 15%.
9. multijunction solar cell according to claim 1, is characterized in that: the figure of first, second electrode layer described is all containing main grid, and the main grid of described first electrode layer and the second electrode lay is connected to each other.
10. multijunction solar cell according to claim 9, is characterized in that: the main grid width of first, second electrode layer described is 20 microns ~ 500 microns.
The preparation method of 11. multijunction solar cells, comprises step:
(1) difference formal dress epitaxial growth first extension and the second epitaxial structure, wherein the first epitaxial structure comprises substrate, the first opto-electronic conversion lamination and cover layer from bottom to top successively, and the second epitaxial structure comprises back contact, the second opto-electronic conversion lamination from bottom to top successively;
(2) in the cover surface of described first epitaxial structure, form the first electrode layer, form the second electrode lay on the surface at the back contact of described second epitaxial structure;
(3) described first epitaxial structure and the second epitaxial structure is engaged: use a mucigel, fit between the cover layer of described first epitaxial structure and the back contact of described second epitaxial structure, ensure that the upright projection of the second electrode lay is in the first electrode layer simultaneously;
(4) form a metal connecting layer and be electrically connected the first electrode layer and the second electrode lay, make two epitaxial structures each other conducting thus formed multijunction solar cell, the projection of metal connecting layer on described first epitaxial structure of wherein said formation is positioned at outside the projection of described second epitaxial structure on the first epitaxial structure.
The preparation method of 12. multijunction solar cells according to claim 11, is characterized in that: step (4) comprising:
Remove part second epitaxial structure, exposed portion the second electrode lay;
Remove the described mucigel of part, exposed portion first electrode layer, it obtains the area that the projection of the second metal level on the first epitaxial structure is less than described first epitaxial structure, but is greater than the area of described second epitaxial structure;
Form described metal connecting layer, its one end is positioned on the first electrode layer of exposing, and the other end is positioned on the second electrode lay that exposes, thus is electrically connected first, second electrode layer.
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| US20110155231A1 (en) * | 2009-12-31 | 2011-06-30 | Tzer-Perng Chen | Multi-junction solar cell |
| CN202423306U (en) * | 2010-08-23 | 2012-09-05 | 思阳公司 | CIS/CIGS base series connection photovoltaic module structure of high performance |
| CN102751389A (en) * | 2012-07-19 | 2012-10-24 | 厦门市三安光电科技有限公司 | Preparation method of efficient multi-junction solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20110155231A1 (en) * | 2009-12-31 | 2011-06-30 | Tzer-Perng Chen | Multi-junction solar cell |
| CN202423306U (en) * | 2010-08-23 | 2012-09-05 | 思阳公司 | CIS/CIGS base series connection photovoltaic module structure of high performance |
| CN102751389A (en) * | 2012-07-19 | 2012-10-24 | 厦门市三安光电科技有限公司 | Preparation method of efficient multi-junction solar cell |
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