CN104319304B - Multijunction solar cell and preparation method thereof - Google Patents
Multijunction solar cell and preparation method thereof Download PDFInfo
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- CN104319304B CN104319304B CN201410630008.6A CN201410630008A CN104319304B CN 104319304 B CN104319304 B CN 104319304B CN 201410630008 A CN201410630008 A CN 201410630008A CN 104319304 B CN104319304 B CN 104319304B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides a kind of multijunction solar cell and preparation method thereof, wherein structure includes: multijunction solar cell, including: the first epitaxial structure be positioned at the second epitaxial structure thereon, wherein the first epitaxial structure comprises substrate, the first opto-electronic conversion lamination and cover layer the most successively, and the second epitaxial structure comprises back contact, the second opto-electronic conversion lamination the most successively；The cover surface of described first epitaxial structure and the back contact surface of described second epitaxial structure are respectively provided with first, second electrode layer, and the upright projection of described the second electrode lay is in described first electrode layer；Engaged by a mucigel between the cover layer of described first epitaxial structure and the back contact of described second epitaxial structure；Described first electrode layer is connected with the second electrode lay so that first, second epitaxial structure turns on each other, thus forms multijunction solar cell.
Description
Technical field
The invention belongs to compound semiconductor area of solar cell, be specifically related to a kind of high-efficiency multi-junction solar cell and preparation method thereof.
Background technology
Develop solar energy in recent years, photovoltaic power generation technology has attracted the common concern of people, wherein compound semiconductor solar cell reduces space with its higher conversion efficiency and bigger cost of electricity-generating, is acknowledged as one of most potential Ground Application generation technology.
In order to obtain the compound semiconductor solar cell with higher conversion efficiency, the continuous research and probe of people, has successively developed the multiple solar battery structures such as binode, three-joint solar cell, impalpable structure, inverted structure solar cell.Such as, Emcore company reports a kind of use upside-down mounting epitaxy technology and is disposably successfully epitaxially formed GaInP/GaAs/InGaAs (1.0eV)/InGaAs (0.7eV) upside-down mounting four-junction solar cell on gaas substrates, generally, emission layer the thinnest during employing upside-down mounting epitaxy technology needs to grow at first, grow the thickest base and its minor battery structure the most successively, in longer growth course, the impact such as the annealing on emission layer will make to push up battery structure (thickness, doping and interface) change, overall structure is difficult to control to, battery performance will be greatly affected.
Another approach obtaining multijunction cell is to be bonded together two binode batteries to obtain by the way of wafer bonding, and epitaxy technology is required relatively low by technique route, and it it is critical only that the exploitation of wafer bond techniques.Wafer bond techniques is generally divided into directly bonding semiconductor, alignment bonding and middle Intercalative binding medium and carries out bonding etc..First alignment bonding technology makes metal grid lines at two bonded interfaces, and then by the bonding technology carrying out and being bonded aligned with each other for metal grid lines, bond strength meets requirement.Owing to metal grid lines has certain thickness, will make to exist at interface one layer of space after being bonded, this is disadvantageous to the application of product.The technique para-linkage medium that middle Intercalative binding medium carries out being bonded requires higher, typically require that it has preferable electric conductivity, electric conductivity and light transmission, therefore medium choose the most important, Soitec uses ITO to obtain GaInP/GaAs/InGaAsP/InGaAs tetra-junction battery as bonding medium, but ITO is at long-wave band light (> 1000nm) transmitance only have about 85%, bottom two junction battery current limlitings will be caused, affect battery performance.In order to avoid the technological difficulties of above bonding technology, people select directly bonding semiconductor technique sometimes.This is a kind of bonding techniques making to be formed between semiconductor and semiconductor covalent bond by HTHP, needs the crystal orientation of bonding semiconductor interface aligned with each other to obtain good bond strength, but crystal orientation alignment is difficult.It addition, either the bonding technology of Direct Bonding or middle Intercalative binding medium is required for the bonded interface with atomically flating, and often a micron-sized particle all will make the bonding at this to realize, and has a strong impact on bonding yield and large-scale production.
Summary of the invention
It is an object of the invention to provide a kind of high-efficiency multi-junction solar cell and preparation method thereof, it uses formal dress epitaxy technology, use viscose technique for sticking, be connected with the front metal electrode of understructure by the back metal electrode of superstructure, thus realize multijunction solar cell structure.The flatness not requirement at para-linkage interface of the present invention, the viscose of use is the highest to the transmitance of light, therefore compensate for directly bonding semiconductor and the difficult point of middle Intercalative binding medium bonding technology, the most there is not voiding problem during alignment bonding simultaneously.
Multijunction solar cell, including: the first epitaxial structure be positioned at the second epitaxial structure thereon, wherein the first epitaxial structure comprises substrate, the first opto-electronic conversion lamination and cover layer the most successively, and the second epitaxial structure comprises back contact, the second opto-electronic conversion lamination the most successively；The cover surface of described first epitaxial structure and the back contact surface of described second epitaxial structure are respectively provided with first, second electrode layer, and the upright projection of described the second electrode lay is in described first electrode layer；Engaged by a mucigel between the cover layer of described first epitaxial structure and the back contact of described second epitaxial structure；Described first electrode layer is connected by a metal connecting layer with the second electrode lay, and its projection on described first epitaxial structure is positioned at outside the projection on the first epitaxial structure of described second epitaxial structure.
Preferably, described second epitaxial structure upright projection is in described first epitaxial structure.
Preferably, the projection on the first epitaxial structure of the described the second electrode lay is less than the area of described first epitaxial structure, but is more than the area of described second epitaxial structure.
Preferably, described first opto-electronic conversion lamination includes the first sub-battery and the second sub-battery successively, and the second opto-electronic conversion lamination includes the 3rd sub-battery and the 4th sub-battery successively.
Preferably, the band gap width magnitude relationship of described four knot batteries is: the first sub-battery ＜ second sub-battery ＜ the 3rd sub-battery of sub-battery ＜ the 4th.
Preferably, the cover layer of described first epitaxial structure and the back contact of described second epitaxial structure can be all GaAs, InGaP or InGaAs.
Preferably, the material of described first, second electrode layer is AuGe alloy, AuSn alloy, AuBe alloy, AuZn alloy, Au or Ag.
Preferably, described first electrode layer area accounting in described first epitaxial structure is 1% ~ 15%.
Preferably, described the second electrode lay area accounting in described second epitaxial structure is 1% ~ 15%.
Preferably, the figure of described first electrode layer and the second electrode lay all contains main grid, and the main grid of described first electrode layer and the second electrode lay is connected to each other.
Preferably, the main grid width of described first electrode layer is 20 microns ~ 500 microns.
Preferably, the main grid width of described the second electrode lay is 20 microns ~ 500 microns.
A kind of preparation method of multijunction solar cell, including step: 1) distinguish formal dress epitaxial growth the first extension and the second epitaxial structure, wherein the first epitaxial structure comprises substrate, the first opto-electronic conversion lamination and cover layer the most successively, and the second epitaxial structure comprises back contact, the second opto-electronic conversion lamination the most successively；2) in the cover surface of described first epitaxial structure, form the first electrode layer, the back contact surface of described second epitaxial structure is formed the second electrode lay；3) engage described first epitaxial structure and the second epitaxial structure: use a mucigel, by fitting between cover layer and the back contact of described second epitaxial structure of described first epitaxial structure, ensure that the upright projection of the second electrode lay is in the first electrode layer simultaneously；4) form a metal connecting layer and be electrically connected with the first electrode layer and the second electrode lay, two epitaxial structures are turned on each other, thus forming multijunction solar cell, the projection on described first epitaxial structure of the metal connecting layer of described formation is positioned at outside the projection on the first epitaxial structure of described second epitaxial structure.
Preferably, described step 4) includes: remove part the second epitaxial structure exposed portion the second electrode lay；Removing the described mucigel of part, exposed portion the first electrode layer, it obtains second metal level projection on the first epitaxial structure area less than described first epitaxial structure, but is more than the area of described second epitaxial structure；Forming described metal connecting layer, its one end is positioned on the first electrode layer exposed, and the other end is positioned on the second electrode lay exposed, thus is electrically connected with first, second electrode layer.
The innovative point of the present invention is, use formal dress epitaxy technology completely, can particularly simple obtain high-quality many knots battery, sub-battery performance is easily guaranteed that, use viscose technique for sticking, be connected with the front metal electrode of understructure by the back metal electrode of superstructure, thus complete multijunction solar cell structure, compensate for directly bonding semiconductor and the difficult point of middle Intercalative binding medium bonding technology, the most there is not voiding problem during alignment bonding simultaneously.
Accompanying drawing explanation
Accompanying drawing is for providing a further understanding of the present invention, and constitutes a part for specification, is used for together with embodiments of the present invention explaining the present invention, is not intended that limitation of the present invention.Additionally, accompanying drawing data are to describe summary, it is not drawn to scale.
Fig. 1 is the side sectional view of a kind of multijunction solar cell implemented according to the present invention.
Fig. 2 is the side sectional view growing the first epitaxial structure in InP substrate.
Fig. 3 is the side sectional view growing the second epitaxial structure on gaas substrates.
Fig. 4 is the side sectional view forming the first electrode layer in the first epitaxial structure cover surface.
Fig. 5 is to paste on temporary support by the second epitaxial structure upper surface, removes substrate and sacrifice layer, forms the side sectional view of the second electrode afterwards on back contact surface.
Fig. 6 ~ Fig. 8 shows several top view pattern for first, second electrode layer shown in Fig. 4 and Fig. 5.
Fig. 9 is the side sectional view after mucigel being used between cover layer and the back contact of the second epitaxial structure of the first epitaxial structure to engage.
Figure 10 is the InGaP/GaAs/InGaAsP/ implemented according to the present invention
InGaAs multijunction solar cell side sectional view.
Detailed description of the invention
The details of the present invention be will now be described, comprise exemplary aspect and the embodiment of the present invention.Referring to diagram and following description, identical Ref. No. is used for identifying identical or functionally similar element, and is intended to the principal character of highly simplified graphic mode explanation one exemplary embodiment.
Refer to accompanying drawing 1, a kind of multijunction solar cell, including the first epitaxial structure 100 and the second epitaxial structure 200, connected by mucigel 400 between the two.Concrete, the first epitaxial structure 100 includes substrate the 101, first sub-battery 110, tunnel junctions the 120, second sub-battery 130 and cover layer 140；Second epitaxial structure 200 includes the sub-battery 230 of back contact the 220, the 3rd, tunnel junctions 240 and the 4th sub-battery 250.There is on the surface of the back contact 220 wherein on cover layer 140 surface of the first epitaxial structure 100 with first electrode layer the 301, second epitaxial structure 200 the second electrode lay 302, the first electrode layer 301, the second electrode lay 302 and the second epitaxial structure projection P on the first epitaxial structure respectively301、P302、P200Relation be: P301＞ P302＞ P200.First electrode layer 301 and the second electrode lay 302 are connected by metal connecting layer 600, and its projection on the first epitaxial structure 100 is positioned at outside the projection on the first epitaxial structure of second epitaxial structure 200.
Below in conjunction with preparation method, a kind of multijunction solar cell structure implemented according to the present invention is elaborated.
A kind of preparation method of multijunction solar cell structure, including below step:
Refer to accompanying drawing 2, epitaxial growth the first epitaxial structure 100.
One p-type InP substrate 101 being cleaned up, load MOCVD reative cell, chamber pressure is arranged on 120mbar.At 750 DEG C, toast substrate 10 minutes, be cooled to 600 DEG C, be epitaxially formed the sub-battery of InGaAs first 110.Being specially first growth thickness is p-type Al of 20nm0.2In0.54Ga0.26As back surface field layer 111, then growth thickness be 3 m, doping content be 1 × 1017 cm-3P-type In0.54Ga0.46As base 112, regrowth thickness is 150nm, doping content is 2 × 1018cm-3N-shaped In0.54Ga0.46As emission layer 113, last growth thickness is 50nm, doping content is 1 × 1018cm-3N-shaped Al0.2In0.54Ga0.26As Window layer 114, constitutes the sub-battery of InGaAs first 110.
In InGaAs first sub-battery 110 Epitaxial growth n++-AlInGaAs/p++-AlInGaAs tunnel junctions 120.First growth thickness be 15nm, doping content be 2 × 1019 cm-3N-shaped Al0.3In0.54Ga0.16As layer 121, then growth thickness be 15nm, doping content be 2 × 1020
cm-3P-type Al0.3In0.54Ga0.16As layer 122.
At the sub-battery 130 of n++-AlInGaAs/p++-AlInGaAs tunnel junctions 120 Epitaxial growth InGaAsP second.Being specially first growth thickness is the p-type InP back surface field layer 131 of 50nm, then growth thickness be 2 m, doping content be 1 × 1017 cm-3P-type InGaAsP base 132, regrowth thickness is 150nm, doping content is 2 × 1018cm-3N-shaped InGaAsP emission layer 133, last growth thickness is 50nm, doping content is 1 × 1018cm-3N-shaped InP Window layer 134.At InGaAsP second sub-battery 130 Epitaxial growth N-shaped In0.3Ga0.7As cover layer 140, thickness is 200nm, doping content is 1 × 1019cm-3, thus in InP substrate, complete the first epitaxial structure 100.
Refer to accompanying drawing 3, epitaxial growth the second epitaxial structure 200.
Being cleaned up by one N-shaped GaAs substrate 202, and load MOCVD reative cell, chamber pressure is arranged on 120mbar.First toasting substrate 10 minutes at 750 DEG C, be cooled to 650 DEG C, epitaxial growth p-type InGaP sacrifice layer 210, thickness 200nm, then growth p-type GaAs back contact 220, thickness 200nm, doping content is 1 × 1019cm-3.GaAs back contact 220 grows the sub-battery 230 of GaAs the 3rd.Being specially first growth thickness is the p-type AlGaAs back surface field layer 231 of 20nm, then growth thickness be 3 m, doping content be 1 × 1017 cm-3P-type GaAs base 232, regrowth thickness is 100nm, doping content is 2 × 1018cm-3N-shaped GaAs emission layer 233, last growth thickness is 50nm, doping depth is 1 × 1018cm-3N-shaped GaInP Window layer 234.
In GaAs the 3rd sub-battery 230 Epitaxial growth n++-GaInP/p++-AlGaAs tunnel junctions 240, be cooled to 580 DEG C, first growth thickness be 15nm, doping content be 2 × 1019
cm-3N-shaped GaInP layer 241, then growth thickness be 15nm, doping content be 2 × 1020 cm-3P-type AlGaAs layer 242.
At the sub-battery 250 of n++-GaInP/p++-AlGaAs tunnel junctions 240 Epitaxial growth InGaP the 4th.Being specially first growth thickness is the p-type AlInGaP back surface field layer 251 of 20nm, then growth thickness be 600nm, doping content be 6 × 1016 cm-3P-type In0.5Ga0.5P base 252, regrowth thickness is 150nm, doping content is 5 × 1018cm-3N-shaped In0.5Ga0.5P emission layer 253, last growth thickness is 50nm, doping depth is 5 × 1018cm-3N-shaped AlInP Window layer 254, thus complete the second epitaxial structure 200 on gaas substrates.
Refer to accompanying drawing 4, the first electrode layer 301 is made at the first epitaxial structure 100 upper surface, its material is AuBe/Ti/Ag, gross thickness is 5 m, and electrode pattern is grid line shape, as shown in Figure 6, wide 200 m of main grid, secondary grid width 5 m, first electrode layer 301 area accounting in the first epitaxial structure is 1 ~ 15%, preferably 5%.
Refer to accompanying drawing 5, remove the substrate 202 of the second epitaxial structure 200 and sacrifice layer 210 and on back contact 220, form the second electrode lay 302.It is specially at the CR-200 glue 700 that second epitaxial structure 200 upper surface spin coating a layer thickness is 20 m, then quartz glass plate 800 is placed, ensure that CR-200 glue 700 fits tightly with quartz glass plate 800, between there is no space, finally at 200 DEG C, under the conditions of 200kpa time-consuming 5 minutes so that quartz glass plate 800 is combined closely with the second epitaxial structure 200；Use ammoniacal liquor: peroxide water: water=2:3:1 solution, time-consuming 1 hour, GaAs substrate 202 is removed in selective corrosion, it is then used by phosphoric acid: hydrochloric acid=2:3 solution-selective erosion removal InGaP sacrifice layer 210, then the second epitaxial structure is cleaned by deionized water, making AuGe/Ti/Ag the second electrode lay 302 by photoetching and evaporation coating technique on GaAs back contact 220 surface of the second epitaxial structure, gross thickness is 5 m.The second electrode lay 302 is grid line shape, and as shown in Figure 6, wide 50 m of main grid, secondary grid width 5 m, metal electrode figure area accounting in the first epitaxial structure is 3%, and the profile of electrode pattern 302 is slightly less than electrode pattern 301.Fig. 6～8 shows the top view pattern of several electrode pattern 301 and 302.
Refer to accompanying drawing 9, engage the first epitaxial structure 100 and the second epitaxial structure 200.Be specially first epitaxial structure 100 upper surface formed thickness be Tra-bond glue as mucigel 400, then is fitted each other with the first epitaxial structure 100 cover surface in the second epitaxial structure 200 back contact surface, then realize both at 200 DEG C, under the conditions of 200kpa time-consuming 5 minutes and fit tightly.Last heating 10 minutes at 200 DEG C, remove quartz glass plate 800, then remove CR-200 glue 700.
Refer to accompanying drawing 10, form connection metal level 600 and the main grid of the first electrode layer 301 and the second electrode lay 302 is connected with each other.Remove part the second epitaxial structure 200 specifically by photoetching and ICP etch process, expose the part main grid of the second electrode lay 302, then remove metal electrode figure 301 surface portion mucigel 400, expose the part main grid of the first electrode layer 301；SiO is formed at the second epitaxial structure sidewall2Protective layer 500；Use evaporation process deposition metal connecting layer 600, its one end is positioned on the main grid of the first electrode layer exposed, the other end is positioned on the main grid of the second electrode lay exposed, thus the main grid of the first electrode layer 301 and the second electrode 302 is connected to each other, and finally obtains InGaP/GaAs/InGaAsP/
InGaAs multijunction solar cell.
In the present embodiment, being different from four junction batteries using upside-down mounting epitaxy technology, use formal dress epitaxy technology completely, can particularly simple obtain high-quality four knot batteries, sub-battery performance is easily guaranteed that；GaInP/InGaAs(or GaAs that the present embodiment obtains)/InGaAsP/InGaAs tetra-junction battery band gap is combined as 1.9eV/1.4eV/1.0eV/0.6eV, higher open-circuit voltage (more than 4.1V under 1000 times) can be obtained, compensate for the impact that four junction battery performances are caused by first, second knot battery current limliting；Use viscose technique for sticking, be connected with the front metal electrode of understructure by the back metal electrode of superstructure, thus realize multijunction solar cell structure.The flatness not requirement at para-linkage interface of the present invention, the viscose of use is the highest to the transmitance of light, therefore compensate for directly bonding semiconductor and the difficult point of middle Intercalative binding medium bonding technology, the most there is not voiding problem during alignment bonding simultaneously.
Claims (12)
1. multijunction solar cell, including: the first epitaxial structure be positioned at the second epitaxial structure thereon, wherein the first epitaxial structure comprises substrate, the first opto-electronic conversion lamination and cover layer the most successively, and the second epitaxial structure comprises back contact, the second opto-electronic conversion lamination the most successively；The cover surface of described first epitaxial structure and the back contact surface of described second epitaxial structure are respectively provided with first, second electrode layer, and the upright projection of described the second electrode lay is in described first electrode layer, the first electrode layer and the second electrode lay projection P 301 on the first epitaxial structure respectively, the relation of P302 be: P301 ＞ P302；It is connected by a mucigel between the cover layer of described first epitaxial structure and the back contact of described second epitaxial structure；Described first electrode layer is connected by a metal connecting layer with the second electrode lay, and its projection on described first epitaxial structure is positioned at outside the projection on the first epitaxial structure of described second epitaxial structure.
Multijunction solar cell the most according to claim 1, it is characterised in that: described second epitaxial structure upright projection is in described first epitaxial structure.
Multijunction solar cell the most according to claim 2, it is characterised in that: the projection on the first epitaxial structure of the described the second electrode lay is less than the area of described first epitaxial structure, but is more than the area of described second epitaxial structure.
Multijunction solar cell the most according to claim 1, it is characterised in that: described first opto-electronic conversion lamination includes the first sub-battery and the second sub-battery successively, and the second opto-electronic conversion lamination includes the 3rd sub-battery and the 4th sub-battery successively.
5. according to wanting profit to require the multijunction solar cell described in 4, it is characterised in that: the band gap width magnitude relationship of described four knot batteries is: the first sub-battery ＜ second sub-battery ＜ the 3rd sub-battery of sub-battery ＜ the 4th.
Multijunction solar cell the most according to claim 1, it is characterised in that: the cover layer of described first epitaxial structure and the back contact of described second epitaxial structure are GaAs, InGaP or InGaAs.
Multijunction solar cell the most according to claim 1, it is characterised in that: described first electrode layer area accounting in described first epitaxial structure is 1% ~ 15%.
Multijunction solar cell the most according to claim 1, it is characterised in that: described the second electrode lay area accounting in described second epitaxial structure is 1% ~ 15%.
Multijunction solar cell the most according to claim 1, it is characterised in that: the figure of described first, second electrode layer all contains main grid, and the main grid of described first electrode layer and the second electrode lay is connected to each other.
Multijunction solar cell the most according to claim 9, it is characterised in that: the main grid width of described first, second electrode layer is 20 microns ~ 500 microns.
The preparation method of 11. multijunction solar cells, including step:
(1) difference formal dress epitaxial growth the first extension and the second epitaxial structure, wherein the first epitaxial structure comprises substrate, the first opto-electronic conversion lamination and cover layer the most successively, and the second epitaxial structure comprises back contact, the second opto-electronic conversion lamination the most successively；
(2) in the cover surface of described first epitaxial structure, form the first electrode layer, the back contact surface of described second epitaxial structure is formed the second electrode lay；
(3) engage described first epitaxial structure and the second epitaxial structure: use a mucigel, by fitting between cover layer and the back contact of described second epitaxial structure of described first epitaxial structure, ensure that the upright projection of the second electrode lay is in the first electrode layer simultaneously；
(4) form a metal connecting layer and be electrically connected with the first electrode layer and the second electrode lay, two epitaxial structures are turned on each other thus forms multijunction solar cell, first electrode layer of wherein said formation and the second electrode lay projection P 301 on the first epitaxial structure respectively, the relation of P302 be: P301 ＞ P302, the projection on described first epitaxial structure of the described metal connecting layer is positioned at outside the projection on the first epitaxial structure of described second epitaxial structure.
The preparation method of 12. multijunction solar cells according to claim 11, it is characterised in that: step (4) including:
Remove part the second epitaxial structure, exposed portion the second electrode lay；
Removing the described mucigel of part, exposed portion the first electrode layer, it obtains second metal level projection on the first epitaxial structure area less than described first epitaxial structure, but is more than the area of described second epitaxial structure；
Forming described metal connecting layer, its one end is positioned on the first electrode layer exposed, and the other end is positioned on the second electrode lay exposed, thus is electrically connected with first, second electrode layer.
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| CN202423306U (en) * | 2010-08-23 | 2012-09-05 | 思阳公司 | CIS/CIGS base series connection photovoltaic module structure of high performance |
| CN102751389A (en) * | 2012-07-19 | 2012-10-24 | 厦门市三安光电科技有限公司 | Preparation method of efficient multi-junction solar cell |
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| CN102751389A (en) * | 2012-07-19 | 2012-10-24 | 厦门市三安光电科技有限公司 | Preparation method of efficient multi-junction solar cell |
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Effective date of registration: 20231027 Address after: No.20 Haitai South Road, Huayuan Industrial Zone, Xiqing District, Tianjin 300384 Patentee after: Tianjin Sanan Optoelectronics Co.,Ltd. Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |