CN108231935A - Solar cell module and preparation method thereof - Google Patents

Solar cell module and preparation method thereof Download PDF

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Publication number
CN108231935A
CN108231935A CN201611183415.2A CN201611183415A CN108231935A CN 108231935 A CN108231935 A CN 108231935A CN 201611183415 A CN201611183415 A CN 201611183415A CN 108231935 A CN108231935 A CN 108231935A
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China
Prior art keywords
layer
isolation channel
solar battery
battery cell
solar
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CN201611183415.2A
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兰立广
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BEIJING HANNENG CHUANGYU TECHNOLOGY Co Ltd
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BEIJING HANNENG CHUANGYU TECHNOLOGY Co Ltd
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Priority to CN201611183415.2A priority Critical patent/CN108231935A/en
Publication of CN108231935A publication Critical patent/CN108231935A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a kind of solar cell modules, including several solar battery cells, each solar battery cell includes the supporting layer, metal electrode layer and photoelectric conversion layer that stack gradually setting, isolation channel is formed between the adjacent solar battery cell, the isolation channel runs through the metal electrode layer and photoelectric conversion layer;It is realized and is electrically connected by interconnection electrode between the solar battery cell, solar cell module of the present invention uses coplanar set-up mode between adjacent solar battery unit, the problem of cell area caused by avoiding traditional solar battery cell overlap joint series connection wastes, the utilization ratio of solar battery cell is increased effectively, improves the photoelectric conversion efficiency of component.

Description

Solar cell module and preparation method thereof
Technical field
The present invention relates to a kind of technical field of solar batteries, more particularly to a kind of solar cell module and its Preparation method.
Background technology
The development and progress of human society, the acquisition with the energy are closely bound up with utilizing.Wherein, fossil energy is that the mankind rely With the main energy sources of survival and development, still, for fossil energy as nonrenewable resources, reserves on earth are fixed , also, as the energy demand that the mankind are continuously improved, fossil fuel are just exhausted with ever-increasing rate, the mankind are to substituting The needs of the energy become more and more apparent, and wind energy, solar energy and water can be used as emerging clean energy resource, be fossil energy (coal, oil and Natural gas) reproducible, environmental-friendly substitute, have extensive development prospect.
Solar energy is a kind of inexhaustible, nexhaustible energy source.It is estimated that the earth is projected among 1 year too Positive energy, energy are equivalent to heat caused by 137,000,000,000,000 tons of standard coals, and about the whole world utilizes the various energy in 1 year at present More than 20,000 times of produced energy.In China, the area there are about 2/3 can be compared with good utilisation solar energy resources, and solar energy is sent out Electricity is not limited by regions, can realize photovoltaic system modularization, is arranged close to the place of power consumption, and can be far from electricity The area of net reduces transmission and disttrbution cost, increases the reliability of power supply facilities.At present, thin-film solar cells is due to light suction It is few to receive layer materials, it is interior only to need several microns that solar energy are efficiently converted into electric energy in material property.
Heterogeneous semiconductor joint solar cell is made of two kinds of different semi-conducting materials of band structure, in contact surface Upper erengy band bends or is mutated, and is the carrier that photovoltaic effect generates in the semiconductors so as to form built in field Separation provides condition.Because semi-conducting material type is various, so also there are many select for the material of composition heterojunction solar battery It selects.At present, amorphous silicon/monocrystalline silicon heterojunction battery is mainly included in heterogeneous semiconductor joint solar cell, InGaP/GaAs is different Matter junction battery, CdS/CdTe hetero-junction solar cells, organic bulk heterojunction, AlGaAs/GaAs hetero-junction solar cells etc..Due to utilizing HF acid Separation of the epitaxial lift-off (ELO) of realization applied to GaAs epitaxial layers and substrate, and N-shaped doped base layer and p+ types The contact for adulterating emitter layer generates p-n layer.When light is absorbed near p-n layer to generate electron hole pair, in hetero-junctions Built in field can make hole be moved to p+ types doped side and electronics is made to be moved to N-shaped doped side.The displacement of photo-generated carrier leads to p Potential difference is formed between+type doped side and N-shaped doped side, forms photovoltaic effect.GaAs GaAs thin-film solar cells is The highest battery of photoelectric conversion efficiency in current hull cell, and have the characteristics that light weight, can flexibility, have extremely wide General application prospect, because its have the characteristics that it is efficient, on year-on-year basis under the conditions of can have high output work under less light-receiving area Rate can be applied to consumer battery product.At present, mainly existed using the method for metal-organic chemical vapor deposition equipment (MOCVD) Deposition cell layer forms photovoltaic device on GaAs epitaxial wafers, is then removed battery layers using epitaxial lift-off (ELO), leads to It crosses and light-receiving surface electrode is prepared on monolithic battery, be then several batteries compared with small area by laser cutting by monolithic battery. In series-connected cell interconnection process, the series connection between battery is realized by way of similar " tile " overlap joint between battery, but It is effective profit that such mutual contact mode causes the low GaAs deposition cell layer gross areas due to overlapping region percentage of batteries is covered With rate.
Invention content
For this purpose, the technical problems to be solved by the invention are there is stacked cause when existing solar cell is connected with each other The problem of effective area reduces, and then a kind of solar cell module is provided, by changing solar cell module structure solution It has determined problem of the prior art, has improved the effective rate of utilization of solar cell module.
To achieve the above object, the present invention is adopted the following technical scheme that:
A kind of solar cell module, including several solar battery cells, each solar battery cell is included successively Stack supporting layer, metal electrode layer and the photoelectric conversion layer of setting, be formed between the adjacent solar battery cell every From slot, the isolation channel runs through the metal electrode layer and photoelectric conversion layer;Pass through interconnection between the solar battery cell Electrode realizes electrical connection.
The supporting layer of the adjacent solar battery cell after the region splicing of metal electrode layer covering described in not forming The bottom of isolation channel.
The interconnection electrode includes:
Gate electrode line:Including main grid and the secondary grid for being formed on photoelectric conversion layer and being electrically connected with main grid;
Interconnect contact:Be provided on each solar battery cell and be electrically connected with metal electrode layer, and with the solar energy The interconnection contact of the gate electrode line mutually insulated of battery unit;
The interconnection contact electrical connection of gate electrode line on solar battery cell solar battery cell adjacent thereto Realize being connected in series with for solar battery cell.
Each solar battery cell is equipped with the battery interconnection notch through photoelectric conversion layer, and the battery interconnects slot Mouth exposes the metal electrode layer, is equipped in the battery interconnection notch and is touched with the interconnection of battery interconnection notch inner wall insulation Point.
Form X-direction isolation channel or Y-direction isolation channel between the adjacent solar battery cell, the X-direction every Slot is provided with insulating materials, the Y-direction isolation channel sets or be not provided with insulating materials;
The main grid is arranged in the top of the insulating materials in X-direction isolation channel.
The battery interconnection notch of each solar battery cell is set, and set close to the X-direction isolation channel The interconnection contact in the battery interconnects notch and the secondary gate insulation of the solar battery cell are put, the pair grid are perpendicular to described Main grid.
Insulating materials is provided between the battery interconnection notch inner wall and the interconnection contact.
The solar cell module further includes the reflecting layer between the metal electrode layer and photoelectric conversion layer, institute The isolation channel stated exposes the metal electrode layer through metal electrode layer, reflecting layer and photoelectric conversion layer.
The solar cell module both ends are respectively arranged with extraction electrode, and the extraction electrode includes first and draws electricity Pole and the second extraction electrode, the metal electrode layer of first extraction electrode and end solar battery cell are electrically connected, institute The main grid for stating the second extraction electrode and the other end solar battery cell is electrically connected.
A kind of method for preparing solar cell module, includes the following steps:
S1, solar battery cell is prepared
S11, sacrificial layer and photoelectric conversion layer are sequentially depositing in substrate;
S12, mask method deposit metal electrodes layer is used on photoelectric conversion layer, the metal electrode layer is by X-direction first Isolation channel, the first isolation channel of Y-direction are divided into several regions;
S13, supporting layer is bonded, and remove sacrificial layer with stripping group in the top of the metal electrode layer using laminating technology Bottom;
S14, the photoelectricity is etched in first isolation channel of X-direction and the corresponding position of the first isolation channel of the Y-direction Conversion layer is respectively formed X-direction isolation channel and Y-direction isolation channel;The photoelectric conversion layer is etched simultaneously forms battery interconnection slot Mouthful, expose the metal electrode layer;
Supporting layer is cut on the length direction of S15, in X direction isolation channel and Y-direction isolation channel, is broken it To multiple solar battery cells;
S2, battery unit interconnection:
S21, solar battery cell display is arranged on substrate, is X between the adjacent solar battery cell Direction isolation channel or Y-direction isolation channel, fill insulant in the X-direction isolation channel;
S22, the incident light plane making gate electrode line in solar battery cell, the gate electrode line includes mutually electrical The main grid of connection and secondary grid, the main grid are arranged in X-direction isolation channel on fill insulant, and the secondary grid are formed in Solar battery cell it is upper;The interconnection contact with battery interconnection notch inner wall insulation is made in battery interconnection notch;
The interconnection contact electrical connection of gate electrode line on solar battery cell solar battery cell adjacent thereto Realize being connected in series with for solar battery cell;
S3, it encapsulates up to solar cell module.
Preferably, the step S2 further includes S22 and S23:
S23, the first extraction electrode is made in one side end of supporting layer, the second extraction electrode is made in the other end;
S24, first extraction electrode are by interconnecting the metal electrode layer of contact and the end solar battery cell Electrical connection;The main grid of second extraction electrode and the solar battery cell is electrically connected.
The step S11 and S13 is:
S11, buffer layer, sacrificial layer and photoelectric conversion layer are sequentially depositing in substrate;
S13, supporting layer is bonded in the top of the metal electrode layer using laminating technology;Binding agent fills X-direction first The first isolation channel of isolation channel and Y-direction, and sacrificial layer is removed to remove buffer layer and substrate.
The step S12 and S14 is:
S12, mask method deposition of reflective layer and metal electrode layer, the reflecting layer and metal electricity are used on photoelectric conversion layer Pole layer is divided into several regions by the first isolation channel of X-direction, the first isolation channel of Y-direction;
S14, the photoelectricity is etched in first isolation channel of X-direction and the corresponding position of the first isolation channel of the Y-direction Conversion layer is respectively formed X-direction isolation channel and Y-direction isolation channel;Reflecting layer described in etched portions and photoelectric conversion layer shape simultaneously Notch is interconnected into battery, exposes the metal electrode layer.
The step S21 is:
The fill insulant in X-direction isolation channel and Y-direction isolation channel, so as to fulfill the insulation between battery unit.
The present invention has the advantages that relative to the prior art:
1st, solar cell module provided by the invention, including several solar battery cells, each solar cell list Member includes stacking gradually the supporting layer, metal electrode layer and photoelectric conversion layer of setting, is put down together between adjacent solar battery unit Face setting forms solar cell module, and cell area caused by avoiding traditional solar battery cell overlap joint series connection wastes The problem of, the utilization ratio of solar battery cell is increased effectively, improves the photoelectric conversion efficiency of component.
2nd, solar cell module of the present invention first passes through cutting mode and forms solar battery cell in preparation process, Several solar battery cells are arranged again and are interconnected, are prepared into the solar cell module with bigger voltage and current.And show The solar battery cell for having technology is prepared from same substrate, and the size of substrate is limited, if without segmentation only The component of small size can be prepared, it is impossible to meet the needs of practical application.The present invention forms solar cell list by cutting Member, then several solar battery cells are interconnected, so as to prepare large scale, high voltage and the component of electric current.It is specifically logical Cross reflecting layer and the metal electrode for forming the first isolation channel with X-direction and Y-direction on photoelectric conversion layer using mask method Layer bonds supporting layer and after removing sacrificial layer and substrate, then by photoelectric conversion layer is performed etching to be formed X-direction isolation channel and Y-direction isolation channel, then using on the laser cutting parameter in X direction length direction of isolation channel and Y-direction isolation channel to adhesive layer Carrying out cutting with supporting layer makes its fracture, obtains multiple battery units.It to be formed too since solar battery cell can rearrange Positive energy battery component, has the advantage of high integration, and cell area is utilized, and manufacturing process is simple and has in maximum area The characteristics of easily realizing.
Description of the drawings
Fig. 1 is the exploded perspective view of solar battery cell of the present invention;
Fig. 2 is the explosive view of solar cell module of the present invention;
Fig. 3 is the structure diagram of solar cell module of the present invention;
Fig. 4 is A portions enlarged drawing in Fig. 3;
Fig. 5 be in Fig. 4 E-E to sectional view;
Fig. 6 is B portions enlarged drawing in Fig. 3;
Fig. 7 be in Fig. 6 F-F to sectional view;
Fig. 8 is C portions enlarged drawing in Fig. 3;
Fig. 9 be in Fig. 8 G-G to sectional view;
Figure 10 is that Fig. 4 is solar cell module layer structure diagram in preparation process of the present invention;
Figure 11 is solar cell module layer structure diagram before cutting;
Figure 12 is the cross-sectional view of the isolation channel in X direction of Figure 11;
Figure 13 is B portions enlarged drawing in Figure 12;
Wherein in figure:
1- substrates, 2- buffer layers, 3- sacrificial layers, 4- Window layers, 5-N type absorbed layers, 6-P type layers, 7- reflecting layer, 8- metals Electrode layer, the first adhesive layers of 9-, 10- supporting layers, 11- insulating materials, 12-X directions isolation channel, 13-Y directions isolation channel, 14- master Grid, 15-pair grid, 16- batteries interconnection notch, 17- interconnections contact, the first extraction electrodes of 19-, the second extraction electrodes of 20-, 21- light Electric conversion layer, 25- overlapping regions, 27- substrates, the second adhesive layers of 28-.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention Formula is described in further detail.
The present invention can be embodied in many different forms, and should not be construed as limited to embodiment set forth herein. On the contrary, provide these embodiments so that the disclosure will be thorough and complete, and the design of the present invention will be fully conveyed to Those skilled in the art, the present invention will only be defined by the appended claims.In the accompanying drawings, for clarity, Ceng He areas can be exaggerated The size and relative size in domain.It should be understood that when element such as layer, region or substrate are referred to as " being formed in " or " setting " another element " on " when, which can be arranged directly on another element or there may also be intermediary elements. On the contrary, when element is referred to as on " being formed directly into " or " being set up directly on " another element, there is no intermediary elements.
As shown in Fig. 2 and Fig. 1, a kind of solar cell module of the invention, including several solar cells shown in FIG. 1 Unit, each solar battery cell include the supporting layer 10, metal electrode layer 8 and photoelectric conversion layer 21 that stack gradually setting. Solar battery cell array arrangement in the same plane is formed with isolation between the adjacent solar battery cell Slot, the isolation channel run through the metal electrode layer 8 and photoelectric conversion layer 21;Pass through interconnection between the solar battery cell Electrode realizes electrical connection.
As shown in Figure 12 and Figure 13, the supporting layer 10 of the adjacent solar battery cell is not covered by metal electrode layer 8 Region splicing after form the bottom of the isolation channel, the supporting layer of adjacent solar battery unit can contact setting, also may be used Not contact setting.
As shown in Figure 4 and Figure 6, the interconnection electrode includes:
Gate electrode line:Including main grid 14 and the secondary grid 15 for being formed on photoelectric conversion layer 21 and being electrically connected with main grid 14;
Interconnect contact 17:Be provided on each solar battery cell and be electrically connected with metal electrode layer 8, and with the sun The interconnection contact 17 of 15 mutually insulated of secondary grid of energy battery unit;
The interconnection contact 17 of gate electrode line on solar battery cell solar battery cell adjacent thereto electrically connects It connects and realizes being connected in series with for solar battery cell.Its course of work is, secondary 15 collected current of grid and after collecting conduction to main grid 14, main grid 14 is via the interconnection contact 17 of adjacent solar battery unit and the metal electricity of Y-direction adjacent solar battery unit Pole layer 8 is connected, so as to fulfill series connection;In X-direction, adjacent solar battery unit can be realized in parallel by main grid.
Specifically, the solar cell module in Fig. 2 and Fig. 3 is to arrange total 21 pieces of solar battery cell structures by 7 rows 3 Into defining its orientation to the direction of figure with scope of readers, the solar battery cell of first row and second row be too from top to bottom in Fig. 3 Positive energy battery unit forms X-direction isolation channel, and 12 inside of X-direction isolation channel is filled with insulating materials, the insulating materials Upper formation main grid 14, the main grid 14 electrically couple, and with second row too with the secondary grid of the solar battery cell of first row The interconnection contact 17 of positive energy battery unit is electrically connected, so as to fulfill the series electrical of first row and second row solar battery cell Gas couples;And so on, it is connected in series between the solar battery cell of 1-7 rows.First row, secondary series and third row Solar battery cell pass through main grid 14 realize parallel coupled electrical connect.
As shown in Figure 1, each solar battery cell is equipped with the battery interconnection notch 16 through photoelectric conversion layer 21, The battery interconnection slot 16 exposes the metal electrode layer 8, is equipped in the battery interconnection notch 16 and interconnects notch with battery The interconnection contact of 16 inner wall insulations.
As shown in Figures 2 and 3, formed between the adjacent solar battery cell X-direction isolation channel 12 or Y-direction every From slot 13, the X-direction isolation channel 12 is provided with insulating materials 11, and the Y-direction isolation channel 13 can set insulating materials 11, Insulating materials can not also be set;
The main grid 14 is arranged in the top of the insulating materials 11 in X-direction isolation channel 12.
The battery interconnection notch 16 of each solar battery cell is set close to the X-direction isolation channel 12, The pair grid 15 are perpendicular to the main grid.
As shown in Figure 4, Figure 5, Figure 6 and Figure 7, it is provided between the battery interconnection notch inner wall and the interconnection contact 17 Insulating materials 11 as other embodiment, can not also set insulating materials, using air insulation mode.
The solar cell module further includes the reflecting layer between the metal electrode layer 8 and photoelectric conversion layer 21 7, the isolation channel exposes the metal electrode layer 8 through metal electrode layer 8, reflecting layer 7 and photoelectric conversion layer 21.
As shown in Fig. 3, Fig. 4, Fig. 5, Fig. 8, Fig. 9, the solar cell module both ends are respectively arranged with extraction electrode, The extraction electrode includes the first extraction electrode 19 and the second extraction electrode 20, first extraction electrode 19 and end solar energy The metal electrode layer 8 of battery unit is electrically connected, the master of second extraction electrode 20 and the other end solar battery cell Grid 14 are electrically connected.
A kind of method for preparing solar cell module, includes the following steps:
S1, solar battery cell is prepared
S11, as shown in Figure 10, be sequentially depositing sacrificial layer 3 and photoelectric conversion layer 21 on the base 1;
S12, mask method deposit metal electrodes layer 8 is used on photoelectric conversion layer 21, the metal electrode layer 8 is by X-direction First isolation channel, the first isolation channel of Y-direction are divided into several regions;
S13, supporting layer 10 is bonded in the top of the metal electrode layer 8 using laminating technology, and removes sacrificial layer 3 to shell From substrate 1;
S14, the photoelectricity is etched in first isolation channel of X-direction and the corresponding position of the first isolation channel of the Y-direction Conversion layer 21 is respectively formed X-direction isolation channel and Y-direction isolation channel;It is mutual that the formation of photoelectric conversion layer 21 battery is etched simultaneously Join notch 16, expose the metal electrode layer 8, as shown in Figure 1;
S15, as shown in Figure 11, Figure 12 and Figure 13, in X direction on the length direction of isolation channel and Y-direction isolation channel 14 (i.e. Position shown in Figure 11-Figure 13 dotted lines) supporting layer 10 is cut, its fracture is made to obtain multiple solar battery cells;
S2, battery unit interconnection:
S21, solar battery cell display is arranged on substrate, is X between the adjacent solar battery cell Direction isolation channel 12 and Y-direction isolation channel 13, fill insulant 11 in the X-direction isolation channel 12;
S22, the incident light plane making gate electrode line in solar battery cell, the gate electrode line includes mutually electrical The main grid 14 of connection and secondary grid 15, the main grid 14 is arranged in X-direction isolation channel 12 on fill insulant 11, described Secondary grid are formed in the upper of solar battery cell;It is made in battery interconnection notch 16 and battery interconnection 16 inner wall insulation of notch Interconnect contact 17;
The interconnection contact 17 of gate electrode line on solar battery cell solar battery cell adjacent thereto electrically connects It connects and realizes being connected in series with for solar battery cell;
S3, it encapsulates up to solar cell module.
Preferably, the step S2 further includes S22 and S23:
S23, as shown in figure 3,10 1 side end of supporting layer make the first extraction electrode 19, the other end make second Extraction electrode 20;
S24, first extraction electrode 19 are by interconnecting contact 17 and the metal electricity of the end solar battery cell Pole layer electrical connection;The main grid 14 of second extraction electrode 20 and the solar battery cell is electrically connected.
The step S11 and S13 is:
S11, it is sequentially depositing buffer layer 2, sacrificial layer 3 and photoelectric conversion layer 21 on the base 1;
S13, supporting layer 10 is bonded in the top of the metal electrode layer 8 using laminating technology;Binding agent 9 fills X-direction The first isolation channel of first isolation channel and Y-direction, and sacrificial layer 3 is removed to remove buffer layer 2 and substrate 1.
The step S12 and S14 is:
S12, mask method deposition of reflective layer 7 and metal electrode layer 8,7 He of reflecting layer are used on photoelectric conversion layer 21 Metal electrode layer 8 is divided into several regions by the first isolation channel of X-direction, the first isolation channel of Y-direction;
S14, the photoelectricity is etched in first isolation channel of X-direction and the corresponding position of the first isolation channel of the Y-direction Conversion layer 21 is respectively formed X-direction isolation channel 12 and Y-direction isolation channel 13;Reflecting layer 7 described in etched portions and photoelectricity turn simultaneously It changes layer 21 and forms battery interconnection notch 16, expose the metal electrode layer 8.
The step S21 is:
The fill insulant in X-direction isolation channel 12 and Y-direction isolation channel 13, so as to fulfill exhausted between battery unit Edge.
In detail, preparation method of the invention is:
S1, solar battery cell is prepared
S11, it is sequentially depositing buffer layer 2, sacrificial layer 3 and photoelectric conversion layer 21 on the base 1, wherein, the opto-electronic conversion Layer 21 includes Window layer 4, N-type absorbed layer 5 and P-type layer 6;Specifically:
The deposition of S111, sacrificial layer 3:
Using metal-organic chemical vapor deposition equipment technology (MOCVD) in GaAs substrates depositing Al As sacrificial layers 3, sacrifice Layer 3 includes but are not limited to AlAs epitaxial materials, and for thickness about between 5nm-15nm, HF can be used in so thin sacrificial layer 3 Sour wet etching technique, so as to which epitaxial layer of the subsequent deposition on sacrificial layer 3 be detached with GaAs substrates 1.Preparing, AlAs is sacrificial Also one layer of GaAs buffer layer 2 can be deposited before domestic animal layer 3 in GaAs substrates, the wherein structure of buffer layer 2 can be for one layer or more The structure of layer, the effect of GaAs buffer layers 2 are to provide a kind of intermediary between GaAs substrates 1 and AlAs sacrificial layers Layer, so as to which when forming various epitaxial layers, defect center caused by can reducing lattice mismatch and crystal lattice stress influence, so as to extension The different crystalline lattice structure of various epitaxial layers is grown, such as the GaAs buffer layers in about 150nm-250nm thickness section can be applied to Photovoltaic cell based on the various doped structures of GaAs;
The depositing operation of S112, Window layer 4:
Using the method for metal-organic chemical vapor deposition equipment (MOCVD), in the disposed thereon 10nm- of AlAs sacrificial layers 3 The AlInGaP semiconductor layers of 40nm thickness, this transparent window layer 4 can allow photon directly through without absorbing;
The depositing operation of S113, N-type absorbed layer 5:
The depositing n-type III-V compound material GaAs (GaAs) in Window layer 4, GaAs layers of absorbed layer 5 can be monocrystalline Structure or N-shaped doping way, wherein, if N-shaped doping N-type absorbed layer 5 doping concentration can about 1 × 1016cm-3To 1 × 1019cm-3In the range of, such as 5 × 1017cm-3, the thickness of N-type absorbed layer 5 is located at 400nm to 4000nm ranges It is interior;
The preparation process of S114, P-type layer 6;
Using metal-organic chemical vapor deposition equipment (MOCVD) method, P-type layer 6 is prepared in the top of N-type absorbed layer 5, Middle P-type layer 6 includes any suitable Group III-V compound semiconductor that heterojunction structure can be formed with N-type absorbed layer 5, such as N-type Absorbed layer 5 is GaAs materials, then the composition of P-type layer 6 is AlGaAs layers, and is p-type heavy doping, and doping concentration can be about 1 ×1017Cm-3 to 1 × 1020cm-3In the range of, preferably 5 × 1018cm-3, and the thickness of P-type layer 6 between 150nm to 450nm it Between, preferably 300nm.In this way, Window layer 4, N-type absorbed layer 5 can form photoelectric conversion layer 21 with P-type layer 6;
S12, mask method deposition of reflective layer 7 and metal electrode layer 8, the reflecting layer 7 and metal electricity are used in P-type layer 6 Pole layer 8 is divided by several the first isolation channels of X-direction, the first isolation channel of Y-direction and is divided into several regions;
Specifically, the preparation process of metal electrode layer 8 is as follows:
Using the method for graphic mask physical vapour deposition (PVD) (PVD), reflecting layer 7 and metal electricity are prepared in the top of P-type layer 6 Pole layer 8, forms the first isolation channel of X-direction, the first isolation channel of Y-direction, several so as to which reflecting layer 7 and metal electrode layer 8 are divided into Area same area, and the isolation groove depth of x-direction and y-direction is identical with the thickness in reflecting layer 7 and metal electrode layer 8.Reflection The main function of layer 7 is by the photon of reflectance-transmittance GaAs, to improve the absorbing probability of photon.In addition it is also possible in deposition P An interfacial layer is prepared between type layer 6 and reflecting layer 7, boundary layer and P-type layer 6 are AlGaAs layers, and boundary layer is P+ type weight Doping, doping concentration can be about 5 × 1017cm-3To 5 × 1020cm-3In the range of, preferably 1 × 1019cm-3, P+ type heavy doping Purpose can help to be formed Ohmic contact, and the thickness of boundary layer between 100nm between 400nm, preferred 200nm thickness.Separately A kind of embodiment deposits one layer of reflecting layer 7 using the method for physical vapour deposition (PVD) (PVD) in P-type layer 6, then uses again The method of graphic mask physical vapour deposition (PVD) (PVD), deposition has patterned metal electrode layer 8, and forms metal electrode X side To and Y-direction groove, and the depth of groove is identical with the thickness of metal electrode layer 8, and finally etching makes the reflection that deposition is completed Layer 7 is equal with 8 area of metal electrode layer, and the thickness range of metal layer is 2um-25um, and the composition of metal layer includes but unlimited In the combination of copper (Cu), gold (Au), silver (Ag), titanium (Ti), nickel (Ni), aluminium (Al) one or more therein;
S13, supporting layer 10 is bonded in the top of the metal electrode layer 8 using laminating technology, the supporting layer 10 is High polymer insulating layer;And sacrificial layer 3 is removed with stripping group bottom 1 and buffer layer 2;Specifically,
S131, supporting layer 10 (high molecular polymer PET) technique for sticking are as follows:Using wet-etching technology, by GaAs electricity Etching away for the selectivity of photoelectric conversion layer 21 on pond edge AlAs sacrificial layers 3 so as to expose AlAs sacrificial layers 3, be Subsequent GaAs batteries epitaxial layer stripping is prepared, and laminating technology is then carried out, by supporting layer 10 and 8 upper surface of metal electrode layer It is bonded and combined and with certain intensity using the first adhesive layer 9, it is preferred that is supported using appropriate pressure and heating process Layer 10 with metal electrode layer 8 bond and be combined, and the binding agent on polymer insulation layer surface layer is immersed metal electrode layer X-direction It in first isolation channel, the first isolation channel of metal electrode layer Y-direction and fills up, so as to be protected in subsequent wet corrosion technique engineering Protect metal electrode layer 8;
S132, epitaxial layer stripping technology:The GaAs substrates 1 for bonding supporting layer 10 and photoelectric conversion layer 21 are immersed in HF In acid solution, wherein, the concentration of HF acid is controlled in the range of 15%-30%, and the time is 4-8 hours, sacrificial to AlAs using HF acid Domestic animal layer 3 and the corrosion rate difference of GaAs substrates 1 remove the etching completely of AlAs sacrificial layers 3, so as to fulfill photoelectric conversion layer 21 With the separation of GaAs substrates 1;
S14, the window is etched in first isolation channel of X-direction and the corresponding position of the first isolation channel of the Y-direction Layer 4, N-type absorbed layer 5 and P-type layer 6, are respectively formed X-direction isolation channel 12 and Y-direction isolation channel 13;Simultaneously close to the X side To the place of isolation channel 12, selectively Window layer 4, N-type absorbed layer 5, P-type layer 6 and reflecting layer 7 form electricity described in etched portions Pond interconnects notch 16;
Specifically, using dry etching or multistep wet-etching technology, several X-direction isolation channels are etched in incident light plane 12nd, Y-direction isolation channel 13 and battery interconnection notch 16, wherein X-direction isolation channel 12 are isolated in z-direction positioned at X-direction first Slot surface and the photoelectric conversion layer for overlapping and running through GaAs batteries;Y-direction isolation channel 13 is located at Y-direction first in z-direction Right over isolation channel and the photoelectric conversion layers of GaAs batteries is overlapped and runs through, in X direction isolation channel 12 and Y-direction isolation channel 13 Supporting layer is cut on length direction, its fracture is made to obtain multiple solar battery cells;Battery interconnection notch 16 is close The X-direction isolation channel 12 is set, and exposes metal electrode layer 8;
Interconnection between S2, battery unit
S21, solar battery cell display is arranged on the substrate of horizontal plane, the adjacent solar battery cell Between for X-direction isolation channel 12 or Y-direction isolation channel 13, fill insulant 11 in the X-direction isolation channel 12;As other Embodiment can also while set insulating materials 11 in the Y direction in isolation channel 13
S22, the incident light plane making gate electrode line in solar battery cell, the gate electrode line includes mutually electrical The main grid 14 of connection and secondary grid 15, the main grid 14 is arranged in X-direction isolation channel 12 on fill insulant 11, described Secondary grid are formed in the upper of solar battery cell;It is made in battery interconnection notch 16 and battery interconnection 16 inner wall insulation of notch Contact 17 is interconnected, the interconnection contact 17 and the main grid 14 of neighbouring solar battery cell are electrically connected.Battery interconnects contact 17 It is contacted in battery interconnection notch 16 and not with battery interconnection 16 side wall of notch, bottom end is contacted with metal electrode layer 8 so as to real Existing electrical contact, the interconnected in series being achieved between element cell;
S23, the first extraction electrode 19 is made in 10 1 side end of supporting layer, the second extraction electrode is made in the other end 20.First extraction electrode 19 interconnects contact 17 by battery and the metal electrode layer 8 of end solar battery cell is electrically connected, As shown in figure 12.The main grid 14 of second extraction electrode 20 and the other end solar battery cell is electrically connected.Described First extraction electrode and the second extraction electrode are tin-coated copper strip.
Preferably, antireflection (AR) being carried out in Window layer 4 after preparation and applying layer arrangement, AR coatings include permitting Xu Guang by and prevent any material that is reflected on its surface of light, including magnesium fluoride (MgF2), silica (SiO2), zinc sulphide (ZnS), titanium dioxide (TiO2), silicon nitride (SiN) it is therein a kind of or any combination thereof.AR coatings can be used any suitable Method (such as sputtering method) is coated on Window layer 4.
S3, encapsulation
Combine using high molecular polymer and Window layer 4 bonding, so as to will incident light plane electrode package in battery.
Specifically, packaging technology is as follows:
With Window layer 4 bond using incident light plane polymer insulation layer and combine, thus by incident light plane electrode package In battery, photoelectric conversion module is formed, is interconnected by several photoelectric conversion modules, realize the series connection and parallel connection between element cell Technique is prepared into component.
Obviously, the above embodiments are merely examples for clarifying the description, and is not intended to limit the embodiments.It is right For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or It changes.There is no necessity and possibility to exhaust all the enbodiments.And the obvious variation thus extended out or Variation is still in the protection scope of this invention.

Claims (14)

1. a kind of solar cell module, including several solar battery cells, each solar battery cell includes heap successively Supporting layer (10), metal electrode layer (8) and the photoelectric conversion layer (21) of folded setting, which is characterized in that
Isolation channel is formed between the adjacent solar battery cell, the isolation channel runs through the metal electrode layer (8) With photoelectric conversion layer (21);It is realized and is electrically connected by interconnection electrode between the solar battery cell.
2. solar cell module according to claim 1, which is characterized in that the support of the adjacent solar battery cell Layer (10) is not formed the bottom of the isolation channel after the region splicing of metal electrode layer (8) covering.
3. solar cell module according to claim 2, which is characterized in that
The interconnection electrode includes:
Gate electrode line:Including main grid (14) and the secondary grid for being formed on photoelectric conversion layer (21) and being electrically connected with main grid (14) (15);
It interconnects contact (17):Be provided on each solar battery cell and be electrically connected with metal electrode layer (8), and with the sun The interconnection contact (17) of the gate electrode line mutually insulated of energy battery unit;
Interconnection contact (17) electrical connection of gate electrode line on solar battery cell solar battery cell adjacent thereto Realize being connected in series with for solar battery cell.
4. solar cell module according to claim 3, which is characterized in that each solar battery cell, which is equipped with, to be passed through The battery interconnection notch (16) of photoelectric conversion layer (21) is worn, the battery interconnection notch (16) makes the metal electrode layer (8) sudden and violent Dew, the interior interconnection contact (17) being equipped with battery interconnection notch (16) inner wall insulation of the battery interconnection notch (16).
5. solar cell module according to claim 4, which is characterized in that
X-direction isolation channel (12) or Y-direction isolation channel (13), the X side are formed between the adjacent solar battery cell Isolation channel (12) is provided with insulating materials (11), the Y-direction isolation channel (13) sets or be not provided with insulating materials (11);
The main grid (14) is arranged in the top of the insulating materials (11) in X-direction isolation channel (12).
6. solar cell module according to claim 5, which is characterized in that each the solar battery cell is described Battery interconnection notch (16) is set close to the X-direction isolation channel (12), and the interconnection being arranged in battery interconnection notch is touched The secondary grid (15) of point and the solar battery cell insulate, and the pair grid (15) are perpendicular to the main grid.
7. solar cell module according to claim 6, which is characterized in that
Insulating materials (11) is provided between battery interconnection notch (16) inner wall and interconnection contact (17).
8. according to any one of the claim 3-6 solar cell modules, which is characterized in that
The solar cell module further includes the reflecting layer between the metal electrode layer (8) and photoelectric conversion layer (21) (7), the isolation channel makes the metal electrode layer through metal electrode layer (8), reflecting layer (7) and photoelectric conversion layer (21) (8) exposure.
9. solar cell module according to claim 8, which is characterized in that
The solar cell module both ends are respectively arranged with extraction electrode, and the extraction electrode includes the first extraction electrode (19) and the second extraction electrode (20), first extraction electrode (19) and the metal electrode layer of end solar battery cell (8) it is electrically connected, second extraction electrode (20) and the main grid (14) of the other end solar battery cell are electrically connected.
A kind of 10. method for preparing solar cell module, it is characterised in that include the following steps:
S1, solar battery cell is prepared
S11, sacrificial layer (3) and photoelectric conversion layer (21) are sequentially depositing in substrate (1);
S12, mask method deposit metal electrodes layer (8) is used on photoelectric conversion layer (21), the metal electrode layer (8) is by X side Several regions are divided into the first isolation channel, the first isolation channel of Y-direction;
S13, using laminating technology the top of the metal electrode layer (8) bond supporting layer (10), and remove sacrificial layer (3) with Stripping group bottom (1);
S14, the opto-electronic conversion is etched in first isolation channel of X-direction and the corresponding position of the first isolation channel of the Y-direction Layer (21), is respectively formed X-direction isolation channel (12) and Y-direction isolation channel (13);Etch the photoelectric conversion layer (21) shape simultaneously Into battery interconnection notch (16), make the metal electrode layer (8) exposure;
Supporting layer (10) is cut on the length direction of S15, in X direction isolation channel (12) and Y-direction isolation channel (13), is made Its fracture obtains multiple solar battery cells;
S2, battery unit interconnection:
S21, solar battery cell display is arranged on substrate, is X-direction between the adjacent solar battery cell Isolation channel (12) or Y-direction isolation channel (13), fill insulant (11) in the X-direction isolation channel (12);
S22, the incident light plane making gate electrode line in solar battery cell, the gate electrode line include being electrically connected to each other Main grid (14) and secondary grid (15), the main grid (14) be arranged in X-direction isolation channel (12) on fill insulant (11), The secondary grid are formed in the upper of solar battery cell;It is made in battery interconnection notch (16) and battery interconnection notch (16) The interconnection contact (17) of inner wall insulation;
Interconnection contact (17) electrical connection of gate electrode line on solar battery cell solar battery cell adjacent thereto Realize being connected in series with for solar battery cell;
S3, it encapsulates up to solar cell module.
11. the method for solar cell module according to claim 10, which is characterized in that the step S2 is further included S22 and S23:
S23, the first extraction electrode (19) is made in (10) one side end of supporting layer, the second extraction electrode is made in end side (20);
S24, first extraction electrode (19) are by interconnecting contact (17) and the side end solar battery cell Metal electrode layer electrical connection;Second extraction electrode (20) and the main grid of the end side solar battery cell (14) it is electrically connected.
12. the method for solar cell module according to claim 10, which is characterized in that the step S11 and S13 is:
S11, buffer layer (2), sacrificial layer (3) and photoelectric conversion layer (21) are sequentially depositing in substrate (1);
S13, supporting layer (10) is bonded in the top of the metal electrode layer (8) using laminating technology;Binding agent (9) fills X side To the first isolation channel of the first isolation channel and Y-direction, and sacrificial layer (3) is removed to remove buffer layer (2) and substrate (1).
13. according to the method for any one of the claim 10-12 solar cell modules, which is characterized in that
The step S12 and S14 is:
S12, mask method deposition of reflective layer (7) and metal electrode layer (8), the reflecting layer are used on photoelectric conversion layer (21) (7) and metal electrode layer (8) is divided into several regions by the first isolation channel of X-direction, the first isolation channel of Y-direction;
S14, the opto-electronic conversion is etched in first isolation channel of X-direction and the corresponding position of the first isolation channel of the Y-direction Layer (21), is respectively formed X-direction isolation channel (12) and Y-direction isolation channel (13);Reflecting layer (7) and light described in etched portions simultaneously Electric conversion layer (21) forms battery interconnection notch (16), makes the metal electrode layer (8) exposure.
14. according to the method for any one of the claim 10-13 solar cell modules, which is characterized in that the step S21 For:
The fill insulant in X-direction isolation channel (12) and Y-direction isolation channel (13), so as to fulfill exhausted between battery unit Edge.
CN201611183415.2A 2016-12-20 2016-12-20 Solar cell module and preparation method thereof Pending CN108231935A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113921630A (en) * 2021-12-07 2022-01-11 中国华能集团清洁能源技术研究院有限公司 Device structure and preparation method thereof

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101743643A (en) * 2007-07-11 2010-06-16 比尔克勒激光技术股份有限公司 Thin-film solar cell module and method for its
CN102341916A (en) * 2009-03-02 2012-02-01 株式会社钟化 Thin film solar cell module
WO2012030701A2 (en) * 2010-08-30 2012-03-08 First Solar, Inc. Photovoltaic device interconnect
CN102906875A (en) * 2010-05-28 2013-01-30 弗立泽姆公司 Method and apparatus for thin film module with dotted interconnects and vias
CN103078000A (en) * 2011-10-25 2013-05-01 绿阳光电股份有限公司 Flexible solar cell module and manufacturing method thereof
CN104412357A (en) * 2012-04-17 2015-03-11 全球太阳能有限公司 Integrated thin film solar cell interconnection
CN104505406A (en) * 2014-12-29 2015-04-08 苏州强明光电有限公司 GaAs double-faced thin-film solar cell
CN205122594U (en) * 2015-10-19 2016-03-30 北京汉能创昱科技有限公司 Solar module of solar wafer and series connection
CN106206787A (en) * 2015-04-30 2016-12-07 郑州精简新能源科技有限公司 Bendable solar module and manufacture method thereof

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101743643A (en) * 2007-07-11 2010-06-16 比尔克勒激光技术股份有限公司 Thin-film solar cell module and method for its
CN102341916A (en) * 2009-03-02 2012-02-01 株式会社钟化 Thin film solar cell module
CN102906875A (en) * 2010-05-28 2013-01-30 弗立泽姆公司 Method and apparatus for thin film module with dotted interconnects and vias
WO2012030701A2 (en) * 2010-08-30 2012-03-08 First Solar, Inc. Photovoltaic device interconnect
CN103078000A (en) * 2011-10-25 2013-05-01 绿阳光电股份有限公司 Flexible solar cell module and manufacturing method thereof
CN104412357A (en) * 2012-04-17 2015-03-11 全球太阳能有限公司 Integrated thin film solar cell interconnection
CN104505406A (en) * 2014-12-29 2015-04-08 苏州强明光电有限公司 GaAs double-faced thin-film solar cell
CN106206787A (en) * 2015-04-30 2016-12-07 郑州精简新能源科技有限公司 Bendable solar module and manufacture method thereof
CN205122594U (en) * 2015-10-19 2016-03-30 北京汉能创昱科技有限公司 Solar module of solar wafer and series connection

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
田民波、刘德令: "《薄膜科学与技术手册 下》", 31 May 1991 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113921630A (en) * 2021-12-07 2022-01-11 中国华能集团清洁能源技术研究院有限公司 Device structure and preparation method thereof

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